Transistors at Radio Frequency

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1 Transistors at Radio Frequency How to describe transistors at radiofrequency. Equivalent circuits and S-parameters Y-parameters and SOLVE Stability of transistor amplifiers (brief) The Klapp RF Oscillator SOLVE Example: The Klapp Oscillator 1 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

2 Transistors at Radio Frequency Transistors are more complex at high frequencies due to the effects of internal parasitic inductance and capacitance. Always try first to seek S-parameters from manufacturers. Or use a simulation package that has them in its database. Failing all this.. do a model. Here s how. We try to glean enough information from datasheets and independent measurements to form a physical model to predict S-parameters. 2 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

3 BF199 VHF Transistor 3 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

4 Radio Frequency Transistor circuit model 4 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

5 BF199 Datasheet 5 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

6 Networks: Y-parameters vs S-parameters Y-parameters and S-parameters are related: y i = (1 + S 22)(1 S 11 ) + S 12 S 21 Z 0 y r = 2S 12 Z0 y f = 2S 21 Z0 y o = (1 + S 11)(1 S 22 ) + S 12 S 21 Z 0 where = (1 + S 11 )(1 + S 22 ) S 21 S ENGN4545/ENGN6545: Radiofrequency Engineering L#13

7 Definition of Y-parameters Need these for employ solve. I i = y i V eb + y r V ec I o = y f V eb + y o V ec 7 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

8 Using Solve For Transistors Consider the base node I b = (y i + y r )V eb y r V cb Consider the collector node I c = (y o + y f )V ec y f V bc Consider the emitter node I e = (y i + y f )V be + (y r + y o )V ce 8 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

9 BF199 S-parameters Use C be = 100pF (f T = 550MHz), C bc = 0.5pF, I c = 7mA and h fe = S angle S 11 Degrees frequency (Hz) 9 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

10 BF199 S-parameters Use C be = 100pF (f T = 550MHz), C bc = 0.5pF, I c = 7mA and h fe = S angle S 21 Degrees frequency (Hz) 10 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

11 BF199 S-parameters Use C be = 100pF (f T = 550MHz), C bc = 0.5pF, I c = 7mA and h fe = S angle S 12 Degrees frequency (Hz) 11 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

12 BF199 S-parameters Use C be = 100pF (f T = 550MHz), C bc = 0.5pF, I c = 7mA and h fe = S angle S 22 Degrees frequency (Hz) 12 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

13 Example: A BF199 Common Emitter Amplifier Use the large signal equivalent (left) to set the bias point. Use the small signal equivalent (right) to set up SOLVE. 13 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

14 Stability Criteria Is the transistor stable in isolation? Linville criterion C = y r y f 2g i g r real(y r y f ) Often we need to know if a transistor amplifier is stable. If a transistor with given y-parameters is loaded by source and load admittances Y S = G S + jb S and Y L = G L + jb L, then the transistor circuit is unconditionally stable if, K = 2(g i + G S )(g o + G L ) y r y f + real(y r y f ) > 1 The Stern Stability Criterion A number of useful related formulae.. see the web brick. 14 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

15 Klapp RF Oscillator Model the transistor using S and Y parameters in exactly the same way as the transistor amplifier. In the project the oscillator is a VCO: the MC PLL has to control the frequency of the oscillator by applying a voltage to a varactor diode or voltage variable capacitor (VVC). We need to prove that the oscillator will oscillator and at what frequency. In SOLVE we inject a current into the tank circuit of the oscillator and determine the frequency at which the ractance of the input impedance is zero and the resisitance is negative. WHY? 15 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

16 Varactor Diode 16 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

17 Klapp RF Oscillator 17 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

18 Using SOLVE: Compute S-parameters and Y-parameters 18 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

19 Using SOLVE: Set circuit values 19 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

20 Using SOLVE: Set SOLVE admittances 20 ENGN4545/ENGN6545: Radiofrequency Engineering L#13

21 KLAPP oscillator input impedance 1000 BF199 local oscillator Real(Z) at node x Imag(Z) at node x ENGN4545/ENGN6545: Radiofrequency Engineering L#13

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