ECEN325: Electronics Spring 2017

Size: px
Start display at page:

Download "ECEN325: Electronics Spring 2017"

Transcription

1 ECEN325: Elecronics Srg 207 Semiconducor n Juncion Diode Sam alermo Analog & Mixed-Signal Cener Texas A&M Universiy

2 Announcemens & eadg HW5 due Mar. 9 azavi Ch2 (oional) Basic semiconducor device hysics, which is useful o undersand how diodes work Covered more deail ECEN 370 azavi Ch3 Diode models and circuis 2

3 Agenda Semiconducor n juncion diodes Diode curren-volage (I-) characerisics Consan volage dro model Solvg circuis wih diodes Diode recifier circuis 3

4 Semiconducors A semiconducor is a maerial whose conduciviy lies somewhere beween an sulaor and a conducor Examle: ure or rsic Silicon (Si) has 4 valence elecrons and is no a very good conducor A semiconducor s conducive roeries can be changed by dog he maerial wih eiher n- ye doans (hoshorous) or -ye doans (Boron) A diode is formed a he boundary or juncion of a and n ye semiconducor 4

5 Semiconducor n Juncion Diode hysical Schemaic Inrsic Si -ye Si dog (Boron) dog (hoshorous) n-ye Si [Sedra/Smih] 5

6 Diffusion, Drif Curren, & Barrier olage [Sedra/Smih] Majoriy-Carrier Diffusion Curren, I D Caused by majoriy carriers diffusg o oher region Near he juncion, holes diffusg o he n-region recombe wih free elecrons, delee he carriers close o he juncion, and form a osiive charged region Similarly, elecrons diffusg o he -region recombe wih free holes, delee he carriers close o he juncion, and form a negaive charged region This charge searaion creaes a Barrier olage which limis he diffusion curren Moriy-Carrier Drif Curren, I S Caused by hermally generaed moriy carriers sweeg across he juncion due o he E-field 6

7 Oeraion w/ Differen Biases [Sedra/Smih] Oen Circui, I D =I S everse-biased, I S >I D, Weak Moriy Carrier Drif Curren Forward-Biased, I D >>I S, Srong Majoriy Carrier Diffusion Curren 7

8 I- Characerisic I d d n I T S e I S Sauraion Curren A [Sedra/Smih] T Thermal olage kt q T 25.9m a T 300K n Idealiy Facor - 2, Assume n if no given 8

9 everse Breakdown For large negaive volages, he revious exonenial equaion redics ha he reverse bias curren should saurae a I S However, wih a large negaive volage - Z he diode breaks down and a large negaive curren exiss Mos diodes should be designed o avoid his reverse-breakdown region [Sedra/Smih] Secial diodes, called Zener diodes, are design o oerae reverse breakdown and used alicaions such as volage regulaors 9

10 Consan-olage-Dro Model Used o simlify analysis If d < consan I d =0 (Oen Circui) If d > consan I d can go o, and d clams a consan (Baery w/ consan volage) We will assume consan = 0.7 [Sedra/Smih] 0

11 Solvg Circuis wih Diodes. A diode will eiher be on or off, resulg 2 ossibiliies for each diode he circui 2. Assume condiion and solve he circui 3. Check soluion for consisency wih he diode model 4. If i is consisen, he soluion is correc and you are done 5. If no consisen, you need o solve he circui wih anoher ossible condiion

12 Diode Circui Examle # Solve for ou and Id Firs assume ha he diode is OFF, i.e. an oen circui Are he diode I- condiions consisen wih he consanvolage-dro model? d =0 and I d =0A This is no consisen wih he diode model! We need o ry anoher diode condiion 2

13 Diode Circui Examle # (con.) Now assume ha he diode is ON, i.e. a 0.7 baery KC a OUT 0mA 5.35, Now, d =0.7 and I d =4.65mA This is consisen wih he diode model! This is he correc soluion OUT OUT 0.7 k I d k OUT 4.65mA 0 3

14 ecifier Circuis [Karsilayan] 4

15 Half-Wave ecifier [azavi] For eak ou s D, on Maximum everse olage 5

16 Half-Wave ecifier Transfer Characerisic [Karsilayan] [Sedra/Smih] Only recifies osiive half of he u signal ose one diode volage dro from he eak value 6

17 Half-Wave ecifier w/ a Filer Ca 7 [azavi] D on C D on ou D on C D on ou e e,, ,, 2 Maximum everse olage,, 3

18 How Much is he ile olage? [azavi] Also C A C e D, on ou 3 ou For a roerly designed filer : D, on T T T C D, on should be T e D, on e T C T C e wheret 3 C eak - o - eak ile olage D, on C f is he u eriod T C D, on T C 8

19 Wha is he eak Diode Curren? and () s cos s Usg cos cos eak value a reach a will This cos s s 0 To simlify his analysis,le's assume ha ,, ou C D D on ou D on C I C I C C I x x x x C I C d d C I I I [azavi]

20 Full-Wave ecifier [Karsilayan] osiive ½ cycle To diode on Negaive ½ cycle Boom diode on [Sedra/Smih] Maximum everse olage 2, D on 20

21 Full-Wave ecifier Transfer Characerisic [Karsilayan] [Sedra/Smih] ecifies all of he u signal ose one diode volage dro from he eak value 2

22 Bridge ecifier s-0.7 [Karsilayan] s-0.7 osiive ½ cycle [Sedra/Smih] D & D3 on Negaive ½ cycle D2 & D4 on Maximum everse olage D, on 22

23 Bridge ecifier Transfer Characerisic [Karsilayan] ecifies all of he u signal ose wo diode volage dros from he eak value 23

24 Full-Wave & Bridge ecifier w/ a Filer Ca [Sedra/Smih] The caacior only discharges for T/2 esuls ½ Ca size for a given rile oughly ½ diode curren due o smaller Ca 2 2 C D, on f I 2 C 24

25 ecifier Trade-Offs Half-Wave ecifier + Simles design wih fewes comonens - equires larges caacior for a given rile Full-Wave ecifier + educes caacior size by ½ relaive o half-wave - equires cener-aed ransformer - Maximum reverse volage almos double ha of half-wave Bridge ecifier + educes caacior size by ½ relaive o half-wave + Save maximum reverse volage as half-wave recifier - ose wo diode volage dros eak value 25

Diodes. Diodes, Page 1

Diodes. Diodes, Page 1 Diodes, Page 1 Diodes V-I Characerisics signal diode Measure he volage-curren characerisic of a sandard signal diode, he 1N914, using he circui shown below. The purpose of he back-o-back power supplies

More information

LAB VII. TRANSIENT SIGNALS OF PN DIODES

LAB VII. TRANSIENT SIGNALS OF PN DIODES LAB VII. TRANSIENT SIGNALS OF PN DIODES 1. OBJECTIVE In his lab, you will sudy he ransien effecs in a -n juncion diode due o a sudden change in curren. Secifically, you will sudy he urn-on, urn-off, and

More information

Table of Contents. 3.0 SMPS Topologies. For Further Research. 3.1 Basic Components. 3.2 Buck (Step Down) 3.3 Boost (Step Up) 3.4 Inverter (Buck/Boost)

Table of Contents. 3.0 SMPS Topologies. For Further Research. 3.1 Basic Components. 3.2 Buck (Step Down) 3.3 Boost (Step Up) 3.4 Inverter (Buck/Boost) Table of Conens 3.0 SMPS Topologies 3.1 Basic Componens 3.2 Buck (Sep Down) 3.3 Boos (Sep Up) 3.4 nverer (Buck/Boos) 3.5 Flyback Converer 3.6 Curren Boosed Boos 3.7 Curren Boosed Buck 3.8 Forward Converer

More information

16.5 ADDITIONAL EXAMPLES

16.5 ADDITIONAL EXAMPLES 16.5 ADDITIONAL EXAMPLES For reiew purposes, more examples of boh piecewise linear and incremenal analysis are gien in he following subsecions. No new maerial is presened, so readers who do no need addiional

More information

A1 K. 12V rms. 230V rms. 2 Full Wave Rectifier. Fig. 2.1: FWR with Transformer. Fig. 2.2: Transformer. Aim: To Design and setup a full wave rectifier.

A1 K. 12V rms. 230V rms. 2 Full Wave Rectifier. Fig. 2.1: FWR with Transformer. Fig. 2.2: Transformer. Aim: To Design and setup a full wave rectifier. 2 Full Wave Recifier Aim: To Design and seup a full wave recifier. Componens Required: Diode(1N4001)(4),Resisor 10k,Capacior 56uF,Breadboard,Power Supplies and CRO and ransformer 230V-12V RMS. + A1 K B1

More information

Analog Circuits EC / EE / IN. For

Analog Circuits EC / EE / IN.   For Analog Circuis For EC / EE / IN By www.hegaeacademy.com Syllabus Syllabus for Analog Circuis Small Signal Equivalen Circuis of Diodes, BJTs, MOSFETs and Analog CMOS. Simple Diode Circuis, Clipping, Clamping,

More information

M2 3 Introduction to Switching Regulators. 1. What is a switching power supply? 2. What types of switchers are available?

M2 3 Introduction to Switching Regulators. 1. What is a switching power supply? 2. What types of switchers are available? M2 3 Inroducion o Swiching Regulaors Objecive is o answerhe following quesions: 1. Wha is a swiching power supply? 2. Wha ypes of swichers are available? 3. Why is a swicher needed? 4. How does a swicher

More information

Creating a Channel for Current Flow

Creating a Channel for Current Flow 10/10/2005 Creaing a Channel for Curren Flow 1/5 Creaing a Channel for Curren Flow When we firs look a an NMOS deice, i appears ha no curren can flow from he Drain elecrode o he Source elecrode (or ice

More information

EXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER

EXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER EXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER INTRODUCTION: Being able o ransmi a radio frequency carrier across space is of no use unless we can place informaion or inelligence upon i. This las ransmier

More information

EE 40 Final Project Basic Circuit

EE 40 Final Project Basic Circuit EE 0 Spring 2006 Final Projec EE 0 Final Projec Basic Circui Par I: General insrucion 1. The final projec will coun 0% of he lab grading, since i s going o ake lab sessions. All oher individual labs will

More information

EE 330 Lecture 24. Amplification with Transistor Circuits Small Signal Modelling

EE 330 Lecture 24. Amplification with Transistor Circuits Small Signal Modelling EE 330 Lecure 24 Amplificaion wih Transisor Circuis Small Signal Modelling Review from las ime Area Comparison beween BJT and MOSFET BJT Area = 3600 l 2 n-channel MOSFET Area = 168 l 2 Area Raio = 21:1

More information

Chapter 1: Introduction

Chapter 1: Introduction Second ediion ober W. Erickson Dragan Maksimovic Universiy of Colorado, Boulder.. Inroducion o power processing.. Some applicaions of power elecronics.3. Elemens of power elecronics Summary of he course.

More information

P. Bruschi: Project guidelines PSM Project guidelines.

P. Bruschi: Project guidelines PSM Project guidelines. Projec guidelines. 1. Rules for he execuion of he projecs Projecs are opional. Their aim is o improve he sudens knowledge of he basic full-cusom design flow. The final score of he exam is no affeced by

More information

4.5 Biasing in BJT Amplifier Circuits

4.5 Biasing in BJT Amplifier Circuits 4/5/011 secion 4_5 Biasing in MOS Amplifier Circuis 1/ 4.5 Biasing in BJT Amplifier Circuis eading Assignmen: 8086 Now le s examine how we C bias MOSFETs amplifiers! f we don bias properly, disorion can

More information

Lecture 5: DC-DC Conversion

Lecture 5: DC-DC Conversion 1 / 31 Lecure 5: DC-DC Conversion ELEC-E845 Elecric Drives (5 ECTS) Mikko Rouimo (lecurer), Marko Hinkkanen (slides) Auumn 217 2 / 31 Learning Oucomes Afer his lecure and exercises you will be able o:

More information

Power Efficient Battery Charger by Using Constant Current/Constant Voltage Controller

Power Efficient Battery Charger by Using Constant Current/Constant Voltage Controller Circuis and Sysems, 01, 3, 180-186 hp://dx.doi.org/10.436/cs.01.304 Published Online April 01 (hp://www.scirp.org/journal/cs) Power Efficien Baery Charger by Using Consan Curren/Consan olage Conroller

More information

Chapter 2 Introduction: From Phase-Locked Loop to Costas Loop

Chapter 2 Introduction: From Phase-Locked Loop to Costas Loop Chaper 2 Inroducion: From Phase-Locked Loop o Cosas Loop The Cosas loop can be considered an exended version of he phase-locked loop (PLL). The PLL has been invened in 932 by French engineer Henri de Belleszice

More information

Phase-Shifting Control of Double Pulse in Harmonic Elimination Wei Peng1, a*, Junhong Zhang1, Jianxin gao1, b, Guangyi Li1, c

Phase-Shifting Control of Double Pulse in Harmonic Elimination Wei Peng1, a*, Junhong Zhang1, Jianxin gao1, b, Guangyi Li1, c Inernaional Symposium on Mechanical Engineering and Maerial Science (ISMEMS 016 Phase-Shifing Conrol of Double Pulse in Harmonic Eliminaion Wei Peng1, a*, Junhong Zhang1, Jianxin gao1, b, Guangyi i1, c

More information

Negative frequency communication

Negative frequency communication Negaive frequency communicaion Fanping DU Email: dufanping@homail.com Qing Huo Liu arxiv:2.43v5 [cs.it] 26 Sep 2 Deparmen of Elecrical and Compuer Engineering Duke Universiy Email: Qing.Liu@duke.edu Absrac

More information

Control and Protection Strategies for Matrix Converters. Control and Protection Strategies for Matrix Converters

Control and Protection Strategies for Matrix Converters. Control and Protection Strategies for Matrix Converters Conrol and Proecion Sraegies for Marix Converers Dr. Olaf Simon, Siemens AG, A&D SD E 6, Erlangen Manfred Bruckmann, Siemens AG, A&D SD E 6, Erlangen Conrol and Proecion Sraegies for Marix Converers To

More information

90SQ... SERIES. 9 Amp SCHOTTKY RECTIFIER. Bulletin PD rev. E 06/05. Description/ Features. Major Ratings and Characteristics

90SQ... SERIES. 9 Amp SCHOTTKY RECTIFIER. Bulletin PD rev. E 06/05. Description/ Features. Major Ratings and Characteristics 90SQ... SEIES SCHOTTKY ECTIFIE 9 Amp Major aings and Characerisics Characerisics 90SQ... Unis I F(A) ecangular 9 A waveform M range 30 / 4 I FSM @ p = µs sine 20 A F @ 9 Apk, T = 2 C 0.42 range - o 0 C

More information

Multiple Load-Source Integration in a Multilevel Modular Capacitor Clamped DC-DC Converter Featuring Fault Tolerant Capability

Multiple Load-Source Integration in a Multilevel Modular Capacitor Clamped DC-DC Converter Featuring Fault Tolerant Capability Muliple Load-Source Inegraion in a Mulilevel Modular Capacior Clamped DC-DC Converer Feauring Faul Toleran Capabiliy Faisal H. Khan, Leon M. Tolber The Universiy of Tennessee Elecrical and Compuer Engineering

More information

PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View

PRELIMINARY N-CHANNEL MOSFET 1 P-CHANNEL MOSFET. Top View HEXFET Power MOSFET dvanced Process Technology Ulra Low On-Resisance ual N and P Channel Mosfe Surface Moun vailable in Tape & Reel ynamic dv/d Raing Fas Swiching escripion PRELIMINRY N-CHNNEL MOSFET 8

More information

BOUNCER CIRCUIT FOR A 120 MW/370 KV SOLID STATE MODULATOR

BOUNCER CIRCUIT FOR A 120 MW/370 KV SOLID STATE MODULATOR BOUNCER CIRCUIT FOR A 120 MW/370 KV SOLID STATE MODULATOR D. Gerber, J. Biela Laboraory for High Power Elecronic Sysems ETH Zurich, Physiksrasse 3, CH-8092 Zurich, Swizerland Email: gerberdo@ehz.ch This

More information

Linear PFC regulator for LED lighting with the multi-level structure and low voltage MOSFETs.

Linear PFC regulator for LED lighting with the multi-level structure and low voltage MOSFETs. Linear PFC regulaor for lighing wih he muli-level srucure and low volage MOSFETs. Yuichi Noge Nagaoka Universiy of Technology Niigaa, Japan noge@sn.nagaokau.ac.jp Jun-ichi Ioh Nagaoka Universiy of Technology

More information

Special Insert. Everything you wanted to know about Type B residual current circuit breakers but never dared to ask

Special Insert. Everything you wanted to know about Type B residual current circuit breakers but never dared to ask Special Inser Everyhing you waned o know abou Type B residual curren circui breakers bu never dared o ask Claudio Amadori: R&D ABB 1 Figure 1 - Marking of he Type B residual curren circui breakers Type

More information

Simulation Series Termination

Simulation Series Termination ESE370: Circui-Level Modeling, Design, and Opimizaion for Digial Sysems Day 35: December 5, 2012 Transmission Lines Implicaions 1 Transmission Line Agenda Where arise? General wire formulaion Lossless

More information

Study on the Wide Gap Dielectric Barrier Discharge Device Gaofeng Wang

Study on the Wide Gap Dielectric Barrier Discharge Device Gaofeng Wang Sudy on he Wide Gap Dielecric Barrier Discharge Device Gaofeng Wang School of Informaion Engineering, Zhengzhou Universiy, Zhengzhou 450001, China 932167312@qq.com Keywords: DBD; Wide air gap; Plasma body;

More information

Notes on the Fourier Transform

Notes on the Fourier Transform Noes on he Fourier Transform The Fourier ransform is a mahemaical mehod for describing a coninuous funcion as a series of sine and cosine funcions. The Fourier Transform is produced by applying a series

More information

GaN-HEMT Dynamic ON-state Resistance characterisation and Modelling

GaN-HEMT Dynamic ON-state Resistance characterisation and Modelling GaN-HEMT Dynamic ON-sae Resisance characerisaion and Modelling Ke Li, Paul Evans, Mark Johnson Power Elecronics, Machine and Conrol group Universiy of Noingham, UK Email: ke.li@noingham.ac.uk, paul.evans@noingham.ac.uk,

More information

MULTIWAY SPEAKER SYSTEMS WITH WAVE DIGITAL BRANCHING FILTER BANK

MULTIWAY SPEAKER SYSTEMS WITH WAVE DIGITAL BRANCHING FILTER BANK MULIWAY SPEAKER SYSEMS WIH WAVE DIGIAL BRANCHING FILER BANK Adam Dąbrowski 1 Krzyszof Sozański 2 1 Ins. of Elecronics and elecommunicaion, De. of Elecrical Engineering Poznań Universiy of echnology, ul.

More information

Parameters Affecting Lightning Backflash Over Pattern at 132kV Double Circuit Transmission Lines

Parameters Affecting Lightning Backflash Over Pattern at 132kV Double Circuit Transmission Lines Parameers Affecing Lighning Backflash Over Paern a 132kV Double Circui Transmission Lines Dian Najihah Abu Talib 1,a, Ab. Halim Abu Bakar 2,b, Hazlie Mokhlis 1 1 Deparmen of Elecrical Engineering, Faculy

More information

F.Y. Diploma : Sem. II [CO/IF/CM/CW] Basic Electronics

F.Y. Diploma : Sem. II [CO/IF/CM/CW] Basic Electronics F.Y. Diploma : Sem. [CO/F/CM/CW] asic lecronics Time: 3 Hrs.] Prelim Quesion Paper Soluion [Marks : 70 Q.1 Aemp any FV of he following : [10] Q.1(a) Classify elecronic componens. [2] Ans. Classificaion

More information

AM Demodulation (peak detect.)

AM Demodulation (peak detect.) AM Deodulaion (peak deec.) Deodulaion is abou recovering he original signal--crysal Radio Exaple Anenna = Long Wire FM AM Tuning Circui A siple Diode! Deodulaion Circui (envelop of AM Signal) Filer (Mechanical)

More information

Proceedings of International Conference on Mechanical, Electrical and Medical Intelligent System 2017

Proceedings of International Conference on Mechanical, Electrical and Medical Intelligent System 2017 on Mechanical, Elecrical and Medical Inelligen Sysem 7 Consan On-ime Conrolled Four-phase Buck Converer via Saw-oohwave Circui and is Elemen Sensiiviy Yi Xiong a, Koyo Asaishi b, Nasuko Miki c, Yifei Sun

More information

A New Voltage Sag and Swell Compensator Switched by Hysteresis Voltage Control Method

A New Voltage Sag and Swell Compensator Switched by Hysteresis Voltage Control Method Proceedings of he 8h WSEAS Inernaional Conference on ELECTRIC POWER SYSTEMS, HIGH VOLTAGES, ELECTRIC MACHINES (POWER '8) A New Volage Sag and Swell Compensaor Swiched by Hyseresis Volage Conrol Mehod AMIR

More information

Pulse Train Controlled PCCM Buck-Boost Converter Ming Qina, Fangfang Lib

Pulse Train Controlled PCCM Buck-Boost Converter Ming Qina, Fangfang Lib 5h Inernaional Conference on Environmen, Maerials, Chemisry and Power Elecronics (EMCPE 016 Pulse Train Conrolled PCCM Buck-Boos Converer Ming Qina, Fangfang ib School of Elecrical Engineering, Zhengzhou

More information

AN5028 Application note

AN5028 Application note Applicaion noe Calculaion of urn-off power losses generaed by an ulrafas diode Inroducion This applicaion noe explains how o calculae urn-off power losses generaed by an ulrafas diode, by aking ino accoun

More information

Electronic Circuits I. Instructor: Dr. Alaa Mahmoud

Electronic Circuits I. Instructor: Dr. Alaa Mahmoud Electronic Circuits I Instructor: Dr. Alaa Mahmoud alaa_y_emam@hotmail.com Chapter 27 Diode and diode application Outline: Semiconductor Materials The P-N Junction Diode Biasing P-N Junction Volt-Ampere

More information

EXPERIMENT #9 FIBER OPTIC COMMUNICATIONS LINK

EXPERIMENT #9 FIBER OPTIC COMMUNICATIONS LINK EXPERIMENT #9 FIBER OPTIC COMMUNICATIONS LINK INTRODUCTION: Much of daa communicaions is concerned wih sending digial informaion hrough sysems ha normally only pass analog signals. A elephone line is such

More information

Control circuit for a Self-Oscillating Power Supply (SOPS) TDA8385

Control circuit for a Self-Oscillating Power Supply (SOPS) TDA8385 FEATURES Bandgap reference generaor Slow-sar circuiry Low-loss peak curren sensing Over-volage proecion Hyseresis conrolled sand-by funcion Error amplifier wih gain seing Programmable ransfer characer

More information

Communication Systems. Department of Electronics and Electrical Engineering

Communication Systems. Department of Electronics and Electrical Engineering COMM 704: Communicaion Lecure : Analog Mulipliers Dr Mohamed Abd El Ghany Dr. Mohamed Abd El Ghany, Mohamed.abdel-ghany@guc.edu.eg nroducion Nonlinear operaions on coninuous-valued analog signals are ofen

More information

Explanation of Maximum Ratings and Characteristics for Thyristors

Explanation of Maximum Ratings and Characteristics for Thyristors 8 Explanaion of Maximum Raings and Characerisics for Thyrisors Inroducion Daa shees for s and riacs give vial informaion regarding maximum raings and characerisics of hyrisors. If he maximum raings of

More information

COMBITRON Program Schedule

COMBITRON Program Schedule OMBITRO Program Schedule OMBITRO are supply and acuaor modules for he elecromagne cluches and brakes. As power supply for D- or A-side swiching differen single-wave and bridge recifiers as well as rapid

More information

f t 2cos 2 Modulator Figure 21: DSB-SC modulation.

f t 2cos 2 Modulator Figure 21: DSB-SC modulation. 4.5 Ampliude modulaion: AM 4.55. DSB-SC ampliude modulaion (which is summarized in Figure 21) is easy o undersand and analyze in boh ime and frequency domains. However, analyical simpliciy is no always

More information

1N Amp SCHOTTKY RECTIFIER. Bulletin PD rev. C 11/02. Description/ Features. Major Ratings and Characteristics

1N Amp SCHOTTKY RECTIFIER. Bulletin PD rev. C 11/02. Description/ Features. Major Ratings and Characteristics SCHOTTKY ECTIFIE 60 Amp Major aings and Characerisics Descripion/ Feaures TO-203AB (DO-5) Characerisics Unis I F(AV) ecangular 60* A waveform V WM 45* V I FSM @ 60Hz 000* A V F @ 60 Apk, T = 25 C 0.68*

More information

7 th International Conference on DEVELOPMENT AND APPLICATION SYSTEMS S u c e a v a, R o m a n i a, M a y 27 29,

7 th International Conference on DEVELOPMENT AND APPLICATION SYSTEMS S u c e a v a, R o m a n i a, M a y 27 29, 7 h Inernaional Conference on DEVEOPMENT AND APPICATION SYSTEMS S u c e a v a, o m a n i a, M a y 27 29, 2 0 0 4 THEE-PHASE AC CHOPPE WITH IGBT s Ovidiu USAU 1, Mihai UCANU, Crisian AGHION, iviu TIGAEU

More information

Semiconductor Devices Lecture 5, pn-junction Diode

Semiconductor Devices Lecture 5, pn-junction Diode Semiconductor Devices Lecture 5, pn-junction Diode Content Contact potential Space charge region, Electric Field, depletion depth Current-Voltage characteristic Depletion layer capacitance Diffusion capacitance

More information

Experiment 6: Transmission Line Pulse Response

Experiment 6: Transmission Line Pulse Response Eperimen 6: Transmission Line Pulse Response Lossless Disribued Neworks When he ime required for a pulse signal o raverse a circui is on he order of he rise or fall ime of he pulse, i is no longer possible

More information

An off-line multiprocessor real-time scheduling algorithm to reduce static energy consumption

An off-line multiprocessor real-time scheduling algorithm to reduce static energy consumption An off-line muliprocessor real-ime scheduling algorihm o reduce saic energy consumpion Firs Workshop on Highly-Reliable Power-Efficien Embedded Designs Shenzhen, China Vincen Legou, Mahieu Jan, Lauren

More information

<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE

<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE dual swich (Cahode Common) Forward curren...... 2 0 0 A Repeiive peak reverse volage V RRM... 1 2 0 0 V Maximum juncion emperaure T jmax... 1 5 0 C Fla base Type Copper base plae RoHS Direcive

More information

Physics 160 Lecture 5. R. Johnson April 13, 2015

Physics 160 Lecture 5. R. Johnson April 13, 2015 Physics 160 Lecture 5 R. Johnson April 13, 2015 Half Wave Diode Rectifiers Full Wave April 13, 2015 Physics 160 2 Note that there is no ground connection on this side of the rectifier! Output Smoothing

More information

Design of Power Factor Correction Circuit Using AP1662

Design of Power Factor Correction Circuit Using AP1662 Applicaion Noe 075 Design of Power Facor Correcion Circui Using AP66 Prepared by Wang Zhao Kun ysem Engineering Deparmen. nroducion. Produc Feaures The AP66 is an acive power facor conrol C which is designed

More information

Ch5 Diodes and Diodes Circuits

Ch5 Diodes and Diodes Circuits Circuits and Analog Electronics Ch5 Diodes and Diodes Circuits 5.1 The Physical Principles of Semiconductor 5.2 Diodes 5.3 Diode Circuits 5.4 Zener Diode References: Floyd-Ch2; Gao-Ch6; 5.1 The Physical

More information

BAV70WT1G SBAV70WT1G Dual Switching Diode Common Cathode

BAV70WT1G SBAV70WT1G Dual Switching Diode Common Cathode BA70WT1G, SBA70WT1G Dual Swiching Diode Common Cahode Feaures AECQ101 Qualified and PPAP Capable S Prefix for Auomoive and Oher Applicaions Requiring Unique Sie and Conrol Change Requiremens These Devices

More information

= f 8 f 2 L C. i C. 8 f C. Q1 open Q2 close (1+D)T DT 2. i C = i L. Figure 2: Typical Waveforms of a Step-Down Converter.

= f 8 f 2 L C. i C. 8 f C. Q1 open Q2 close (1+D)T DT 2. i C = i L. Figure 2: Typical Waveforms of a Step-Down Converter. Inroducion Oupu Volage ipple in Sep-Down and Sep-Up Swiching egulaors Oupu volage ripple is always an imporan performance parameer wih DC-DC converers. For inducor-based swiching regulaors, several key

More information

Design and Simulation of Remotely Power Controller

Design and Simulation of Remotely Power Controller Inernaional Journal of Alied Engineering Research ISSN 973-456 olume 1, Number 1 (15. 369-366 Research India Publicaions h://www.riublicaion.com Design and Simulaion of Remoely Power Conroller Hussain

More information

4 20mA Interface-IC AM462 for industrial µ-processor applications

4 20mA Interface-IC AM462 for industrial µ-processor applications Because of he grea number of indusrial buses now available he majoriy of indusrial measuremen echnology applicaions sill calls for he sandard analog curren nework. The reason for his lies in he fac ha

More information

Sensing, Computing, Actuating

Sensing, Computing, Actuating Sensing, Compuing, Acuaing Sander Suik (s.suik@ue.nl) Deparmen of Elecrical Engineering Elecronic Sysems INDUCTIE SENSOS (Chaper.5,.6,.0, 5.4) 3 Inducive sensors damping conrol wheel speed sensor (ABS)

More information

Primary Side Control SMPS with Integrated MOSFET

Primary Side Control SMPS with Integrated MOSFET General Descripion GG64 is a primary side conrol SMPS wih an inegraed MOSFET. I feaures programmable cable drop compensaion and a peak curren compensaion funcion, PFM echnology, and a CV/CC conrol loop

More information

Integrated Forward Half-Bridge Resonant Inverter as a High-Power-Factor Electronic Ballast

Integrated Forward Half-Bridge Resonant Inverter as a High-Power-Factor Electronic Ballast Inegraed Forward Half-Bridge Resonan Inverer as a High-Power-Facor Elecronic Ballas Absrac.- A novel single-sage high-power-facor elecronic ballas obained from he inegraion of a forward dc-o-dc converer

More information

BELECTRIC: Enhanced Frequency Control Capability

BELECTRIC: Enhanced Frequency Control Capability BELECTRIC: Enhanced Frequency Conrol Capabiliy Tim Müller, CTO 28/03/2018 0 Company profile Yearly oal revenue of 550M EUR 84 MW / 95 MWh energy sorage sysems insalled or under consrucion Over 120 paens

More information

Power losses in pulsed voltage source inverters/rectifiers with sinusoidal currents

Power losses in pulsed voltage source inverters/rectifiers with sinusoidal currents ree-wheeling diode Turn-off power dissipaion: off/d = f s * E off/d (v d, i LL, T j/d ) orward power dissipaion: fw/t = 1 T T 1 v () i () d Neglecing he load curren ripple will resul in: fw/d = i Lavg

More information

Three-Phase Isolated High-Power-Factor Rectifier Using Soft-Switched Two-Switch Forward Converter

Three-Phase Isolated High-Power-Factor Rectifier Using Soft-Switched Two-Switch Forward Converter Three-Phase Isolaed High-Power-Facor Recifier Using Sof-Swiched Two-Swich Forward Converer Yungaek Jang, David L. Dillman, and Milan M. Jovanović Power Elecronics Laboraory Dela Producs Corporaion P.O.

More information

Industrial, High Repetition Rate Picosecond Laser

Industrial, High Repetition Rate Picosecond Laser RAPID Indusrial, High Repeiion Rae Picosecond Laser High Power: RAPID is a very cos efficien, compac, diode pumped Nd:YVO4 picosecond laser wih 2 W average power a 1064 nm. Is 10 ps-pulses have high pulse

More information

GG6005. General Description. Features. Applications DIP-8A Primary Side Control SMPS with Integrated MOSFET

GG6005. General Description. Features. Applications DIP-8A Primary Side Control SMPS with Integrated MOSFET General Descripion GG65 is a primary side conrol PSR SMPS wih an inegraed MOSFET. I feaures a programmable cable drop compensaion funcion, PFM echnology, and a CV/CC conrol loop wih high reliabiliy and

More information

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W D44VH (NPN), D45VH (PNP) Complemenary Silicon Power Transisors These complemenary silicon power ransisors are designed for highspeed swiching applicaions, such as swiching regulaors and high frequency

More information

Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense

Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense POFET Smar High-Side Power Swich Two Channels: 2 x 3mΩ Curren Sense Produc Summary Package Operaing olage (on) 5...34 Acive channels one wo parallel On-sae esisance ON 3mΩ 15mΩ Nominal load curren (NOM)

More information

CHAPTER 8 The PN Junction Diode

CHAPTER 8 The PN Junction Diode CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction

More information

Design And Implementation Of Multiple Output Switch Mode Power Supply

Design And Implementation Of Multiple Output Switch Mode Power Supply Inernaional Journal of Engineering Trends and Technology (IJETT) Volume Issue 0-Oc 0 Design And Implemenaion Of Muliple Oupu Swich Mode Power Supply Ami, Dr. Manoj Kumar Suden of final year B.Tech. E.C.E.,

More information

Development of Temporary Ground Wire Detection Device

Development of Temporary Ground Wire Detection Device Inernaional Journal of Smar Grid and Clean Energy Developmen of Temporary Ground Wire Deecion Device Jing Jiang* and Tao Yu a Elecric Power College, Souh China Universiy of Technology, Guangzhou 5164,

More information

CHAPTER 8 The PN Junction Diode

CHAPTER 8 The PN Junction Diode CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction

More information

Self-Precharge in Single-Leg Flying Capacitor Converters

Self-Precharge in Single-Leg Flying Capacitor Converters Self-Precharge in Single-Leg Flying Capacior Converers Seven Thielemans Elecrical Energy, Sysems and Auomaion Deparmen Ghen Universiy (UGen), EESA Ghen, Belgium Email: Seven.Thielemans@UGen.be Alex uderman

More information

DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03

DATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes daa of April 1996 File under Discree Semiconducors, SC01 1996 Sep 03 FEATURES Hermeically sealed leaded glass SOD27 (DO-35) package High swiching speed:

More information

EITG05 Digital Communications

EITG05 Digital Communications Week, Lecure ETG5 Digial Communicaions Week, Lecure Signal Consellaions (. 55) ichael Lenmaier Thursday, Augus, 7 Chaer : odel of a Digial Communicaion Sysem. Signal consellaions.. Pulse amliude modulaion

More information

Signal detection, Fouriertransformation, phase correction and quadrature detection

Signal detection, Fouriertransformation, phase correction and quadrature detection 2/35 Signal deecion, Fourierransformaion, phase correcion and quadraure deecion Peer Schmieder Schmilka 2004 Wha is his seminar abou? Signaldeecion Wha kind of signal do we deec in NMR Fourierransformaion

More information

A New ZVS-PWM Full-Bridge Converter

A New ZVS-PWM Full-Bridge Converter New ZV-PW Full-ridge onverer Yungaek Jang and ilan. Jovanović Dela Producs orporaion Power Elecronics Laboraory P.O. ox 73, 50 Davis Dr. Research Triangle Park, N 7709, U... Yu-ing hang DELT Elecronics

More information

SOFT SWITCHING INVERTER POWER SOURCE FOR ARC WELDING

SOFT SWITCHING INVERTER POWER SOURCE FOR ARC WELDING SOFT SWITCHING INVERTER POWER SOURCE FOR ARC WELDING H. Mecke, W. Fischer, F. Werher Oo-von-Guericke-Universiy Magdeburg, Insiue ELE, Germany Absrac. Modern elecronic power sources for arc welding are

More information

Development of a Push-pull Converter for Fuel Cell Applications

Development of a Push-pull Converter for Fuel Cell Applications Developmen of a Pushpull onverer for Fuel ell Applicaions.K. Kuyula, J.F. Janse van Rensburg Telkom enre of Excellence Insiue of Applied Elecronics Vaal Universiy of Technology, Privae Bag X021 Andries

More information

Interleaved DC/DC Converter with Coupled Inductor Theory and Application

Interleaved DC/DC Converter with Coupled Inductor Theory and Application American Journal of Engineering Research (AJER) e-issn: 2320-0847 p-issn : 2320-0936 Volume-7, Issue-5, pp-80-88 www.ajer.org Research Paper Open Access Inerleaved DC/DC Converer wih Coupled Inducor Theory

More information

ORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF

ORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF www.addmek.com DESCRIPTI is a PWM power ED driver IC. The driving curren from few milliamps up o 1.5A. I allows high brighness power ED operaing a high efficiency from 4Vdc o 40Vdc. Up o 200KHz exernal

More information

How to Shorten First Order Unit Testing Time. Piotr Mróz 1

How to Shorten First Order Unit Testing Time. Piotr Mróz 1 How o Shoren Firs Order Uni Tesing Time Pior Mróz 1 1 Universiy of Zielona Góra, Faculy of Elecrical Engineering, Compuer Science and Telecommunicaions, ul. Podgórna 5, 65-246, Zielona Góra, Poland, phone

More information

MODEL: M6SXF1. POWER INPUT DC Power R: 24 V DC

MODEL: M6SXF1. POWER INPUT DC Power R: 24 V DC Tension-Clamp Ulra-Slim Signal Condiioners M6S Series FUNCTION MODULE (PC programmable) Funcions & Feaures Mainenance-free ension clamp connecion Single inpu filer and funcion module 12 ypes of funcions

More information

Application Note 5324

Application Note 5324 Desauraion Faul Deecion Opocoupler Gae Drive Producs wih Feaure: PLJ, PL0J, PLJ, PL1J and HCPLJ Applicaion Noe 1. Inroducion A desauraion faul deecion circui provides proecion for power semiconducor swiches

More information

Reliability Improvement of FB inverter in HID Lamp Ballast using UniFET II MOSFET family

Reliability Improvement of FB inverter in HID Lamp Ballast using UniFET II MOSFET family Reliabiliy Improvemen of FB inverer in HID Lamp Ballas using UniFET II MOSFET family Won-Seok Kang Sysem & Applicaion Group Fairchild Semiconducor Bucheon, Korea wonseok.kang@fairchildsemi.com Jae-Eul

More information

MEASUREMENTS OF VARYING VOLTAGES

MEASUREMENTS OF VARYING VOLTAGES MEASUREMENTS OF ARYING OLTAGES Measuremens of varying volages are commonly done wih an oscilloscope. The oscilloscope displays a plo (graph) of volage versus imes. This is done by deflecing a sream of

More information

TESTING CREEPING DISCHARGE BEHAVIOUR OF INSULATORS FOR ISOLATED LIGHTNING PROTECTION SYSTEMS

TESTING CREEPING DISCHARGE BEHAVIOUR OF INSULATORS FOR ISOLATED LIGHTNING PROTECTION SYSTEMS IX Inernaional Symposium on Lighning Proecion 26 h -3 h November 27 Foz do Iguaçu, Brazil TESTING CREEPING DISCHARGE BEHAVIOUR OF INSULATORS FOR ISOLATED LIGHTNING PROTECTION SYSTEMS Beierl, Omar Brocke,

More information

Solution of ECE 342 Test 2 S12

Solution of ECE 342 Test 2 S12 Soluion of ECE 342 Tes 2 S2. All quesions regarding superheerodyne receivers refer o his diagram. x c () Anenna B T < B RF < 2 f B = B T Oher Signals f c Mixer f Baseband x RFi RF () x RFo () () () x i

More information

Noise properties in the ideal Kirchhoff-Law-Johnson-Noise. secure communication system

Noise properties in the ideal Kirchhoff-Law-Johnson-Noise. secure communication system Noise roeries in he ideal Kirchhoff-aw-Johnson-Noise secure communicaion sysem Zolan Gingl and ober Mingesz Dearmen of Technical Informaics, Universiy of Szeged, ungary bsrac In his aer we deermine he

More information

Protection Strategies for IGBT Current Source Inverters

Protection Strategies for IGBT Current Source Inverters Proecion Sraegies for IGBT Curren Source Inverers M. Haberberger 1, F. W. Fuchs 2 1 2 Power Elecronics and Elecrical Drives Chrisian-Albrechs-Universiy Kiel, Germany E-Mail: 1 mkh@f.uni-kiel.de, 2 fwf@f.uni-kiel.de

More information

MODEL: M6NXF1. POWER INPUT DC Power R: 24 V DC

MODEL: M6NXF1. POWER INPUT DC Power R: 24 V DC Screw Terminal Ulra-Slim Signal Condiioners M6N Series FUNCTION MODULE (PC programmable) Funcions & Feaures Single inpu filer and funcion module 12 ypes of funcions are PC programmable 7.5-mm wide ulra-slim

More information

Anomalous oscillations with an IMP ATT diode

Anomalous oscillations with an IMP ATT diode Philips ech. Rev. 32, 361-369,1971, No. 9/10/11/12 361 Anomalous oscillaions wih an IMP ATT diode P. J. de Waard Inrodueion In 1967 i was discovered ha an IMPATT-diode oscillaor can have a mode of oscillaion

More information

An Area Efficient Low Power TG Full Adder Design using CMOS Nano Technology

An Area Efficient Low Power TG Full Adder Design using CMOS Nano Technology An Area Efficien Low Power TG Full Adder Design using CMOS Nano Technology 1 Shivani Singh 1 M.ech, Digial Communicaion, RTU, KOTA 2 Buddhi Prakash Sharma 2 ME Scholor, Elecronics & Comm., NITTTR, Chandigarh,

More information

Comparative Analysis of the Large and Small Signal Responses of "AC inductor" and "DC inductor" Based Chargers

Comparative Analysis of the Large and Small Signal Responses of AC inductor and DC inductor Based Chargers Comparaive Analysis of he arge and Small Signal Responses of "AC inducor" and "DC inducor" Based Chargers Ilya Zelser, Suden Member, IEEE and Sam Ben-Yaakov, Member, IEEE Absrac Two approaches of operaing

More information

An Improved Zero-Voltage-Transition Technique in a Single-Phase Active Power Factor Correction Circuit

An Improved Zero-Voltage-Transition Technique in a Single-Phase Active Power Factor Correction Circuit An Improved Zero-lage-Transiion Technique in a Single-Phase Acive Power Facor Correcion Circui Suriya Kaewarsa School of Elecrical Engineering, Rajamangala Universiy of Technology Isan Sakon Nakhon Campus,

More information

Aleksandrs Andreiciks, Riga Technical University, Ingars Steiks, Riga Technical University, Oskars Krievs, Riga Technical University

Aleksandrs Andreiciks, Riga Technical University, Ingars Steiks, Riga Technical University, Oskars Krievs, Riga Technical University Scienific Journal of Riga Technical Universiy Power and Elecrical Engineering Curren-fed Sep-up DC/DC Converer for Fuel Cell Applicaions wih Acive Overvolage Clamping Aleksandrs Andreiciks, Riga Technical

More information

Accurate Tunable-Gain 1/x Circuit Using Capacitor Charging Scheme

Accurate Tunable-Gain 1/x Circuit Using Capacitor Charging Scheme Accurae Tunable-Gain 1/x Circui Using Capacior Charging Scheme Byung-Do Yang and Seo Weon Heo This paper proposes an accurae unable-gain 1/x circui. The oupu volage of he 1/x circui is generaed by using

More information

Digital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices

Digital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased

More information

Active Filters - 1. Active Filters - 2

Active Filters - 1. Active Filters - 2 PHY35 - Elecronics Laboraory, all Term (K rong) Acie ilers - By combining op-amps wih energy-sorage elemens, circuis can be designed o gie frequency-dependen op-amp responses Acie filers are hose ha use

More information

All Silicon Marx-bank topology for high-voltage, high-frequency rectangular pulses

All Silicon Marx-bank topology for high-voltage, high-frequency rectangular pulses All Silicon Marx-bank opology for high-volage, high-frequency recangular pulses L.M. Redondo Cenro de Física da Universidade de Lisboa Insiuo Superior de Engenharia de Lisboa Rua Conselheiro Emídio Navarro

More information