15A, 600V IPM. with Integrated PFC and Open Emitter Pins IRAM F. Intelligent Power Module for Energy Efficient Compressor Applications

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1 Intelligent Power Module for Energy Efficient Compressor Applications 15A, 600V IPM with Integrated PFC and Open Emitter Pins Description International Rectifier's IRAM F is a 15A, 600V PFC+Inverter Intelligent Power Module (IPM) with Open Emitter pins specifically designed for energy efficient Air Conditioners application. IR's technology offers an extremely compact, high performance compressor motor-driver with both PFC and Inverter stage in a single isolated package to simplify design. This advanced IPM is a combination of IR's low V CE (on) Trench IGBT technology and the industry benchmark 3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation problems to heatsink. Features Integrated boost PFC power stage and gate driver Integrated gate drivers and bootstrap circuits Temperature monitor Protection shutdown pin Low V CE (on) Trench IGBT technology Undervoltage lockout for all channels Matched propagation delay for all channels 3.3V Schmitt-triggered input logic Cross-conduction prevention logic Motor Power range up to 2kW / 85~253 Vac Isolation 2000VRMS min and CTI> 600 RoHS Compliant Recognized by UL (File Number: E252584) Absolute Maximum Ratings V CES / V RRM IGBT/ FW Diode Blocking Voltage 600 V V AC AC Input Voltage 253 V RMS V + Positive Bus Voltage 450 V I T C =25 C PFC RMS Current at F PWM =20kHz 20 I T C =100 C PFC RMS Current at F PWM =20kHz 10 I pk_pfc PFC Maximum Peak Phase Current (Note 1) 30 F p_pfc PFC Maximum PWM Carrier Frequency 20 khz P d_pfc PFC Maximum Power dissipation per T C =25 C 62 W Note 1: t P <100ms, V CC =15V, T C =25 C, F PWM =20kHz. A International Rectifier Submit Datasheet Feedback October 23, 2013

2 Internal Electrical Schematic IRAM F V+ (16) D8 Q1 D1 Q2 D2 Q3 D3 PFC (1) Q7 D7 Q4 D4 Q5 D5 Q6 D6 V- (19) VRU (22) VRV (21) VRW (20) R7 R1 VB1 (12) U, VS1 (13) C1 R2 R3 VB2 (8) V, VS2 (9) C2 VB3 (4) W, VS3 (5) C3 R4 R5 R6 VS1 VB2 HO2 VS2 VB3 HO3 VS3 VCC LO1 HIN1 (23) HO1 VB1 LO2 LO3 HIN2 (24) HIN3 (25) VDC Driver IC COM ITRIP LIN1 (26) GF VSS LIN2 (27) VSDC PFCOUT LIN3 (28) HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 PFCIN F/EN RCIN PFC TRIP PFCIN (29) FLT/EN (30) PFCTRIP (31) ITRIP (32) TH (33) R9 R8 VCC (34) VSS (35) C4 C5 C7 C International Rectifier Submit Datasheet Feedback October 23, 2013

3 T J (IGBT & Diode & IC) Maximum Operating Junction Temperature +150 T C Operating Case Temperature Range -20 to +100 T STG Storage Temperature Range -40 to +125 T Mounting torque Range (M3 screw) 0.8 to 1.0 Nm Note 1: t P <100ms, V CC =15V, T C =25 C, F PWM =20kHz. Note 2: Sinusoidal Modulation at V + =400V, V CC =15V, T J =150 C, MI=0.8, PF=0.6, See Figure 4. Note 3: t P <100ms, V CC =15V, T C =25 C, F PWM =6kHz. C Absolute Maximum Ratings (Continued) Symbol Parameter Min Max Units Conditions V S1,2,3 High side floating supply offset voltage V B1,2,3-20 V B1,2, V V B1,2,3 High side floating supply voltage V V CC V IN Low Side and logic fixed supply voltage Input voltage LIN, HIN, PFCIN, I Trip, FLT/EN V PFCTRIP PFC TRIP input voltage V -0.3 Lower of (V SS +15V) or V CC +0.3V Lower of (V SS +15V) or V CC +0.3V V V International Rectifier Submit Datasheet Feedback October 23, 2013

4 PFC Section Electrical Characteristics V BIAS (V CC, V BS1,2,3 )=15V, T J =25ºC, unless otherwise specified. Symbol Parameter Min Typ Max Units Conditions V (BR)CES ΔV (BR)CES / ΔT V CE(ON) I CES Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current V V IN =0V, I C =250µA V/ C V IN=0V, I C =1mA (25 C C) I C =10A, T J =25 C V I C =10A, T J =150 C V IN =0V, V + =600V μa V IN =0V, V + =600V, T J =150 C I F =10A V FM Diode D8 Forward Voltage Drop V I F =10A, T J =150 C V FM Diode D7 Forward Voltage Drop V I F =3.5A PFC Section Switching Characteristics V BIAS (V CC, V BS1,2,3 )=15V, T J =25ºC, unless otherwise specified. Symbol Parameter Min Typ Max Units Conditions E ON Turn-On Switching Loss E OFF Turn-Off Switching Loss E TOT Total Switching Loss E REC Diode Reverse Recovery energy t RR Diode Reverse Recovery time ns E ON Turn-on Switching Loss E OFF Turn-off Switching Loss E TOT Total Switching Loss E REC Diode Reverse Recovery energy t RR Diode Reverse Recovery time ns Q G Turn-On IGBT Gate Charge nc I C =48A, V + =400V, V GE =15V T J =150 C, I C =40A, V P =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area µs µj µj I C =10A, V + =400V V CC =15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 I C =10A, V + =400V V CC =15V, L=1.2mH, T J =150 C Energy losses include "tail" and diode reverse recovery V + = 450V, V GE =+15V to 0V T J =150 C, V + = 360V, V GE =+15V to 0V See CT1 See CT International Rectifier Submit Datasheet Feedback October 23, 2013

5 Inverter Section Electrical Characteristics V BIAS (V CC, V BS1,2,3 )=15V, T J =25ºC, unless otherwise specified. Symbol Parameter Min Typ Max Units Conditions V (BR)CES ΔV (BR)CES / ΔT V CE(ON) I CES Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current V V IN =0V, I C =250µA V/ C V IN=0V, I C =250µA (25 C C) I C =5A, T J =25 C V I C =5A, T J =150 C V IN =0V, V + =600V μa V IN =0V, V + =600V, T J =150 C I F =5A V FM Diode Forward Voltage Drop V I F =5A, T J =150 C C 1,2,3,4 V CC / V BS Capacitor Value nf T J =25 C C 6,7 Itrip / PFCtrip Capacitor Value nf T J =25 C Inverter Section Switching Characteristics V BIAS (V CC, V BS1,2,3 )=15V, T J =25ºC, unless otherwise specified. Symbol Parameter Min Typ Max Units Conditions E ON Turn-On Switching Loss E OFF Turn-Off Switching Loss E TOT Total Switching Loss E REC Diode Reverse Recovery energy t RR Diode Reverse Recovery time ns E ON Turn-on Switching Loss E OFF Turn-off Switching Loss E TOT Total Switching Loss E REC Diode Reverse Recovery energy t RR Diode Reverse Recovery time ns Q G Turn-On IGBT Gate Charge nc I C =8A, V + =400V, V GE =15V T J =150 C, I C =5A, V P =600V RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area µs µj µj I C =5A, V + =400V V CC =15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 I C =5A, V + =400V V CC =15V, L=1.2mH, T J =150 C Energy losses include "tail" and diode reverse recovery V + = 450V, V CC =+15V to 0V T J =150 C, V + = 360V, V GE =+17.5V to 0V See CT1 See CT International Rectifier Submit Datasheet Feedback October 23, 2013

6 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The V S offset is tested with all supplies biased at 15V differential (Note 4) Symbol Definition Min Typ Max Units V B1,2,3 High side floating supply voltage V S V S +15 V S V V S1,2,3 High side floating supply offset voltage Note V V CC Low side and logic fixed supply voltage V V IN Logic input voltage LIN, HIN, PFCIN, I Trip, FLT/EN V V PFCTRIP PFC TRIP input voltage V HIN High side PWM pulse width µs Deadtime External dead time between HIN and LIN µs Note 4: For more details, see IRS26302D data sheet Note 5: Logic operational for V s from COM-5V to COM+600V. Logic state held for V s from COM-5V to COM-V BS. (please refer to DT97-3 for more details) Static Electrical Characteristics Driver Function V BIAS (V CC, V BS1,2,3 )=15V, T J =25ºC, unless otherwise specified. The V IN and I IN parameters are referenced to COM and are applicable to all six channels. (Note 4) Symbol Definition Min Typ Max Units V IN,th+ Positive going input threshold for LIN, HIN, PFCIN, FLT/EN V V IN,th- Negative going input threshold for LIN, HIN, PFCIN, FLT/EN V V CCUV+, V BSUV+ V CC /V BS supply undervoltage, Positive going threshold V V CCUV-, V BSUV- V CC /V BS supply undervoltage, Negative going threshold V V CCUVH, V BSUVH V CC and V BS supply undervoltage lock-out hysteresis V V(I TRIP ) I TRIP threshold Voltage V V(I TRIP, HYS) I TRIP Input Hysteresis V V(PFC TRIP ) PFC TRIP threshold Voltage V V(PFC TRIP, HYS) PFC TRIP Input Hysteresis V I QBS Quiescent V BS supply current µa I QCC Quiescent V CC supply current ma I LK Offset Supply Leakage Current µa I IN+ Input bias current V IN =3.3V for LIN, HIN, PFCIN, FLT/EN µa I IN- Input bias current V IN =0V for LIN, HIN, PFCIN, FLT/EN µa I TRIP+ I TRIP bias current V T/ITRIP =3.3V µa I TRIP- I TRIP bias current V T/ITRIP =0V µa PFC TRIP+ PFC I TRIP bias current V PFC_ITRIP =-250mV µa PFC TRIP- PFC I TRIP bias current V PFC_ITRIP =0V µa R on_flt Fault low on resistance Ω R BS Internal bootstrap FET on resistance Ω International Rectifier Submit Datasheet Feedback October 23, 2013

7 Dynamic Electrical Characteristics V BIAS (V CC, V BS1,2,3 )=15V, T J =25ºC, unless otherwise specified. Driver only timing unless otherwise specified. Symbol Parameter Min Typ Max Units Conditions T ON T OFF Input to Output propagation turnon delay time (see fig.11) Input to Output propagation turnoff delay time (see fig. 11) µs µs T FILIN Input filter time (HIN,LIN,PFC,EN) ns VIN=0 or VIN=3.3V T FILEN Input filter time (FLT/EN) ns V IN =0 or V IN =5V T EN EN low to six switch turn-off propagation delay (see fig. 3) µs V IN =0 or V IN =3.3V, V EN =0 T FLT I TRIP to Fault propagation delay ns V IN =0 or V IN =3.3V, V ITRIP =3.3V T BLT-ITRIP I TRIP Blanking Time ns V IN =0 or V IN =3.3V, V ITRIP =3.3V T ITRIP T PFCTRIP D T M T T FLT-CLR I TRIP to six switch turn-off propagation delay (see fig. 2) PFC TRIP to switch turn-off propagation delay (see fig. 2) Internal Dead Time injected by driver Matching Propagation Delay Time (On & Off) all channels Post I TRIP to six switch turn-off clear time (see fig. 2) I C =5A, V + =400V µs I C =5A, V + =400V µs I C =10A, V + =400V ns V IN =0 or V IN =3.3V ns External dead time> 400ns T C = 25 C ms T C = 100 C International Rectifier Submit Datasheet Feedback October 23, 2013

8 Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Units Conditions R th(j-c) Thermal resistance, PFC IGBT R th(j-c) Thermal resistance, PFC Diode R th(j-c) Thermal resistance, per IGBT R th(j-c) Thermal resistance, per Diode R th(c-s) Thermal resistance, C-S CTI Comparative Tracking Index V C/W Inverter Operating Condition Flat, greased surface. Heatsink compound thermal conductivity 1W/mK Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max Units Conditions R 25 Resistance kω T C = 25 C R 125 Resistance kω T C = 125 C [B(1/T2-1/T1)] B B-constant (25-50 C) k R 2 = R 1 e Temperature Range C Typ. Dissipation constant mw/ C T C = 25 C Input-Output Logic Level Table V + FLT/EN I TRIP HIN1,2,3 LIN1,2,3 U,V,W HIN1,2,3 Ho V (20,22,23) LIN1,2,3 (24,25,26) IC Driver Lo U,V,W (10,6,2) Off Off 1 1 X X Off 0 X X X Off International Rectifier Submit Datasheet Feedback October 23, 2013

9 HIN1,2,3 LIN1,2,3 I TRIP U,V,W Figure 1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 I TRIP T FLT FLT U,V,W T ITRIP T FLT-CLR Figure 2. I TRIP Timing Waveform EN T EN U,V,W Figure 3. Output Enable Timing Diagram Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load International Rectifier Submit Datasheet Feedback October 23, 2013

10 Module Pin-Out Description Pin Name Description 1 PFC PFC 2 na none 3 na none 4 VB3 High Side Floating Supply Voltage 3 5 W,VS3 Output 3 - High Side Floating Supply Offset Voltage 6 na none 7 na none 8 VB2 High Side Floating Supply voltage 2 9 V,VS2 Output 2 - High Side Floating Supply Offset Voltage 10 na none 11 na none 12 VB1 High Side Floating Supply voltage 1 13 U,VS1 Output 1 - High Side Floating Supply Offset Voltage 14 na none 15 na none 16 V + Positive Bus Input Voltage 17 na none 18 na none 19 V - Negative Bus Input Voltage 20 VRW Low Side Emitter Connection - Phase 3 21 VRV Low Side Emitter Connection - Phase 2 22 VRU Low Side Emitter Connection - Phase 1 23 HIN1 Logic Input High Side Gate Driver - Phase 1 24 HIN2 Logic Input High Side Gate Driver - Phase 2 25 HIN3 Logic Input High Side Gate Driver - Phase 3 26 LIN1 Logic Input Low Side Gate Driver - Phase 1 27 LIN2 Logic Input Low Side Gate Driver - Phase 2 28 LIN3 Logic Input Low Side Gate Driver - Phase 3 29 PFCIN PFC input 30 FLT/EN Fault Output and Enable Pin 31 PFC TRIP Current Protection Pin for PFC 32 I TRIP Current Protection Pin for Inverter 33 V TH Temperature Feedback 34 V CC +15V Main Supply 35 V SS Negative Main Supply International Rectifier Submit Datasheet Feedback October 23, 2013

11 Typical Application Connection IRAM F Drive IC 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DT04-4, application note AN-1044 or Figure 11. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation International Rectifier Submit Datasheet Feedback October 23, 2013

12 Maximum Output Phase RMS Current - A Maximum Output Phase RMS Current - A IRAM F T C = 80ºC T C = 90ºC T C = 100ºC PWM Sw itching Frequency - khz Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V + =400V, T J =150 C, MI=0.8, PF=0.6, fmod=50hz F PWM = 6kHz F PWM = 10kHz F PWM = 16kHz Modulation Frequency - Hz Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V + =400V, T J =150 C, T C =100 C, MI=0.8, PF= International Rectifier Submit Datasheet Feedback October 23, 2013

13 Total Pow er Loss - W Total Pow er Loss- W IRAM F I OUT = 7.5A I OUT = 6A I OUT = 5A PWM Sw itching Frequency - khz Figure 6. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V + =400V, T J =150 C, MI=0.8, PF=0.6, fmod=50hz F PWM = 16kHz F PWM = 10kHz F PWM = 6kHz Output Phase Current - A RMS Figure 7. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V + =400V, T J =150 C, MI=0.8, PF=0.6, fmod=50hz International Rectifier Submit Datasheet Feedback October 23, 2013

14 IGBT Junction Temperature - C Max Allow able Case Temperature - ºC IRAM F F PWM = 6kHz F PWM = 10kHz F PWM = 16kHz Output Phase Current - A RMS Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V + =400V, T J =150 C, MI=0.8, PF=0.6, fmod=50hz T J avg = 1.28 x T Therm Internal Thermistor Temperature Equivalent Read Out - C Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16khz, fmod=50hz, MI=0.8, PF= International Rectifier Submit Datasheet Feedback October 23, 2013

15 Recommended Bootstrap Capacitor - μf Thermistor Pin Read-Out Voltage - V IRAM F T THERM R THERM T THERM R THERM T THERM R THERM C kω C kω C kω Max Avg. Min VTherm Thermistor Temperature - C Figure 10. Thermistor Readout vs. Temperature (4.7kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. +5V REXT RTherm μF μF μF μF μF μF PWM Frequency - khz Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency International Rectifier Submit Datasheet Feedback October 23, 2013

16 Figure 12. Switching Parameter Definitions V CE I C I C V CE H IN /L IN 90 % I C V CE H IN /L IN H IN /L IN 90 % I C V CE H IN /L IN 10 % I C 10 % I C t r t f T ON T OFF Figure 12a. Input to Output propagation turnon delay time. Figure 12b. Input to Output propagation turnoff delay time. I F V CE H IN /L IN I rr t rr Figure 12c. Diode Reverse Recovery International Rectifier Submit Datasheet Feedback October 23, 2013

17 V + Hin1,2,3 Ho IN Lin1,2,3 IC Driver Lo U,V,W IO Figure CT1. Switching Loss Circuit V + Hin1,2,3 Ho IN Lin1,2,3 IC Driver Lo U,V,W IO I o Figure CT2. S.C.SOA Circuit V + Hin1,2,3 Ho IN IC Driver U,V,W Lin1,2,3 Lo IO I o Figure CT3. R.B.SOA Circuit International Rectifier Submit Datasheet Feedback October 23, 2013

18 Package Outline IRAM F2 missing pin : 2,3,6,7,10,11,14,15,17,18 note3 note5 note4 1 P 9DF00 IRAM F2 note note1: Unit Tolerance is +0.5mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: "P" Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information International Rectifier Submit Datasheet Feedback October 23, 2013

19 International Rectifier Submit Datasheet Feedback October 23, 2013