DATASHEET TBPF
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1 FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS DATASHEET TBPF Figure 1. tbpf front side 14.0 x 15.0 mm Sub 1GHz Digitally Tunable Bandpass Filter Solderable Module The tbpf is a lumped-element tunable preselection bandpass that consists of three coupled resonators. The bandpass employs a digitally tunable capacitor and allows for tuning the center frequency with a resolution of 5 bits. The tbpf covers the center frequency range from 220 MHz to 425 MHz, including the DVB-T frequency band, a fractional 1dB bandwidth of %, an insertion loss of 6.7 db ± 1.3 db within the tuning range, and a stop-band attenuation of 60 db. Fraunhofer Institute for Integrated Circuits IIS Am Wolfsmantel Erlangen, Germany Contact communicationsystems@iis.fraunhofer.de Fraunhofer IIS Datasheet tbpf v
2 The filter measures mm by mm and consists of a 4-layer FR-4 substrate with 3.62 mm height. A 3-wire SPI enables the digital control interface to a software defined receiver or transmitter platform. Footprint and pins are compatible with tbpf , tbpf Pin # Name Description 1 GND Ground 2 GND Ground 3 RF_IN RF Input 50Ω 4 MOSI (SDA) SPI Data In 5 GND Ground 6 CS (SEN) SPI Chip Select 7 SCLK (SCL) SPI Clock 8 GND Ground 9 VCC Supply Voltage 10 GND Ground 11 GND Ground 12 RF_OUT RF Output 50Ω Figure 2. Pin Configuration TOP View Table 1. Pin Descriptions Typical Application The tbpf is ideal for RF harmonic filtering applications including: Multi-band receiver/transmitter Multi-standard transceiver Software defined radio (SDR) Cognitive radio Frequency monitoring Features Tunable center frequency: MHz Tuning range: 205 MHz Fractional 1dB-bandwidth: % Interface: 3-wire serial port interface (SPI) High linearity: OIP3 37 dbm Type: SMD solderable module Temperature range: -10 C to 50 C PCB: 4-Layer x mm PCB Electrostatic Discharge (ESD) Precautions When handling this tbpf device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Fraunhofer IIS Datasheet tbpf v
3 Electrical Specifications Parameter Conditions Min. Typ. Max. Units Analog performance Tunable center frequency (fc) range fc = 220 MHz 14.0 % Fractional 1 db fc = 295 MHz 12.5 % fc = 425 MHz 8.4 fc = 220 MHz 5.4 db Insertion loss (IL) in fc = 295 MHz 5.6 fc = 425 MHz 8.0 db Rejection at stopband fc = 220 MHz, 37.0 db (fsh) fsh = 440 fc = 425 MHz, 45.7 db fsh = 700 MHz Rejection at stopband fc = 220 MHz, 50.0 db (fsl) fsl = 144 fc = 425 MHz, 50.0 db fsl = 302 MHz 1dB fc = 300 MHz dbm input (INP1dB) Output intercept point fc = 250 MHz dbm order in passband (OIP3) 1) Digital performance Switching time 2) 3) 12 µs Start-up time 2) 4) 100 µs Table 2. Electrical Specifications TA = +25 C, Vcc = 3.3V, Substrate: FR-4 Notes: 1. Measurements were done at an input power of pin = 0 dbm, 2-tone delta frequency f = 1 MHz 2. DC path to ground at RF input and output must be provided to achieve specified performance 3. Time between any two states 4. Time from VCC within specification to all performances within specification Parameter Min. Typ. Max. Units V CC supply voltage V I DD power supply current (V CC = 3.3V) µa I DD standby current (V CC = 3.3V) 75 µa V IH control voltage high V V IL control voltage low V RF input power (50Ω) dbm MHz T OP operating temperature range C Table 3. Operation Ratings Symbol Parameter Min. Max. Units V CC Power supply voltage V V I Voltage on any DC input V Table 4. Absolute Maximum Ratings Fraunhofer IIS Datasheet tbpf v
4 Magnitude db(s(2,1)) Forward Transmission Magnitude S Figure 3. S21 Magnitude evaluated from stage 02 to 31 in 4-steps 0 freq, GHz Reflexion Port 1 Magnitude S11 Figure 4. S11 Magnitude -5 db(s(1,1)) freq, GHz Fraunhofer IIS Datasheet tbpf v
5 0 Reflexion Port 2 Magnitude S22 Figure 5. S22 Magnitude -10 db(s(2,2)) freq, GHz Output Intercept Point 3rd Order Figure 6. Output IP3 at 250 MHz Fraunhofer IIS Datasheet tbpf v
6 Evaluation Board Figure 7. Evaluation Board Evaluation boards for the tbpf (see Figure 7) are available. For more information please refer to the user manual of EVM600S. Package Drawing Figure 8. Package Drawing All dimensions are given in mm. Dimensional and geometrical accuarcy of the package refers to DIN ISO 2768-m standard. Fraunhofer IIS Datasheet tbpf v
7 Footprint Recommendation Figure 9. Footprint Recommendation All dimensions are given in mm. Dimensional and geometrical accuarcy of the package refers to DIN ISO 2768-m standard. Part Number Package Body Material Lead Finish tbpf s RoHS-compliant chem. Ni-Au Table 5. Package Information Part Number Description tbpf-xxx-yyy-s tbpf = tunable bandpass filter xxx = minimum tunable center frequency yyy = maximum tunable center frequency s = solderable The information in this document is subject to change without notice. Fraunhofer IIS Datasheet tbpf v
DATASHEET TBPF
FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS DATASHEET TBPF-630-1400 Figure 1. tbpf-630-1400 front side 14.0 x 15.0 mm Digitally Tunable Bandpass Filter Solderable Module The tbpf-630-1400 is a lumped-element
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Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG
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v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
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v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
ADM-26-929SM The ADM-26-929SM is a broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 db typical
More informationFeatures. = +25 C, 50 Ohm system. DC - 10GHz DC - 14 Ghz DC - 10 GHz DC - 14 GHz Return Loss DC - 14 GHz 5 10 db
Typical Applications v2.717 Features The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram
More informationMADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
More informationSKYA21024: 0.01 to 6.0 GHz Single Control SPDT Switch
DATA SHEET SKYA21024: 0.01 to 6.0 GHz Single Control SPDT Switch Applications Automotive WLAN 802.11 a/b/g/n/ac WLAN repeaters ISM band radios Low power transmit receive systems Automotive infotainment
More information= +25 C, With Vee = -5V & VCTL= 0/-5V
v.3.5db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications Features The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave & VSAT Radios Military & Space Test Instrumentation
More informationFeatures. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
More informationGaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.
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More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
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More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
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