TS488 TS489. Pop-free 120 mw stereo headphone amplifier. Description. Features. Applications. TS488IST - MiniSO-8

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1 TS488 TS489 Pop-free 2 mw stereo headphone amplifier Datasheet - production data Features TS488IST - MiniSO-8 OUT () VIN () BYPASS GND VCC OUT (2) VIN (2) SHUTDOWN Pop and click noise protection circuitry Operating range from = 2.2 V to 5.5 V Standby mode active low (TS488) or high (TS489) Output power: 2 mw at 5 V, into 6 Ω with.% THD+N max ( khz) 55 mw at 3.3 V, into 6 Ω with.% THD+N max ( khz) Low current consumption: 2.7 ma max at 5 V Ultra-low standby current consumption: na typical High signal-to-noise ratio High crosstalk immunity: 2 db (F = khz) PSRR: 7 db typ. (F = khz), inputs grounded at 5 V Unity-gain stable Short-circuit protection circuitry Available in lead-free MiniSO-8 & DFN8 (2 x 2 mm) TS488IQT - DFN8 Vcc 8 OUT (2) OUT () 2 7 VIN () Bypass 3 4 VIN (2) 6 Shutdown 5 GND Description The TS488/9 is an enhancement of TS486/7 that eliminates pop and click noise and reduces the number of external passive components. The TS488/9 is a dual audio power amplifier capable of driving, in single-ended mode, either a 6 Ω or a 32 Ω stereo headset. Capable of descending to low voltages, it delivers up to 3 mw per channel (into 6 Ω loads) of continuous average power with.% THD+N in the audio bandwidth from a 2.5 V power supply. An externally-controlled standby mode reduces the supply current to na (typ.). The unity gain stable TS488/9 is configured by external gainsetting resistors. Applications Headphone amplifiers Mobile phones, PDAs, computer motherboards High-end TVs, portable audio players April 27 DocID97 Rev 6 /33 This is information on a product in full production.

2 Contents TS488, TS489 Contents Typical application schematic Absolute maximum ratings and operating conditions Electrical characteristics Application information Power dissipation and efficiency Total power dissipation Lower cutoff frequency Higher cutoff frequency Gain setting Decoupling of the circuit Standby mode Wake-up time POP performance Connecting the headphones Package information MiniSO-8 package information DFN8 package information Ordering information Revision history /33 DocID97 Rev 6

3 TS488, TS489 Typical application schematic Typical application schematic Figure. Typical application for the TS488-TS489 TS488=stdby TS489=stdby Table. Application component information Component Functional description R in,2 Inverting input resistor that sets the closed loop gain in conjunction with R feed. This resistor also forms a high pass filter with C in (F c = / (2 x Pi x R in x C in )). C in,2 Input coupling capacitor that blocks the DC voltage at the amplifier s input terminal. Feedback resistor that sets the closed loop gain in conjunction with R R in. feed,2 = Closed Loop Gain= -R feed /R in. C s C b C out,2 Supply output capacitor that provides power supply filtering. Bypass capacitor that provides half supply filtering. Output coupling capacitor that blocks the DC voltage at the load input terminal. This capacitor also forms a high pass with (F c = / (2 x Pi x x C out )). DocID97 Rev 6 3/33 33

4 Absolute maximum ratings and operating conditions TS488, TS489 2 Absolute maximum ratings and operating conditions Table 2. Absolute maximum ratings Symbol Parameter Value Unit Supply voltage () 6 V V i Input voltage -.3 V to +.3 V V T stg Storage temperature -65 to +5 C T j Maximum junction temperature 5 C R thja Thermal resistance junction-to-ambient MiniSO-8 DFN8 P diss Power dissipation (2) : MiniSO-8 DFN ESD Human body model (pin-to-pin) 2 kv ESD Machine model 22 pf - 24 pf (pin-to-pin) 2 V Latch-up Latch-up immunity (all pins) 2 ma Lead temperature (soldering, sec) 25 C Output short-circuit to or GND continuous (3). All voltage values are measured with respect to the ground pin. 2. P diss is calculated with T amb = 25 C, T j = 5 C. 3. Attention must be paid to continuous power dissipation (V DD x 25 ma). Short-circuits can cause excessive heating and destructive dissipation. Exposing the IC to a short-circuit for an extended period of time will dramatically reduce the product s life expectancy. C/W W Table 3. Operating conditions Symbol Parameter Value Unit Supply voltage 2.2 to 5.5 V Load resistor 6 Ω T oper Operating free air temperature range -4 to + 85 C C L V STBY R thja Load capacitor: = 6 to Ω > Ω Standby voltage input: TS488 active, TS489 in standby TS488 in standby, TS489 active 4.5 V GND V STBY.4 () Thermal resistance junction-to-ambient MiniSO-8 9 DFN8 (2) 4 pf V C/W. The minimum current consumption (I STBY ) is guaranteed at GND (TS488) or (TS489) for the whole temperature range. 2. When mounted on a 4-layer PCB. 4/33 DocID97 Rev 6

5 TS488, TS489 Electrical characteristics 3 Electrical characteristics Table 4. Electrical characteristics at =+5 V with GND = V, T amb = 25 C (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit I CC Supply current No input signal, no load ma I STBY P out THD+N PSRR V O SNR Standby current Output power Total harmonic distortion + noise Power supply rejection ratio, inputs grounded () Output swing Signal-to-noise ratio Crosstalk Channel separation No input signal, V STBY = GND for TS488, = 32 Ω No input signal, V STBY = for TS489, = 32 Ω THD+N =.% max, F = khz, = 32 Ω 75 THD+N = % max, F = khz, = 32 Ω 7 8 THD+N =.% max, F = khz, = 6 Ω 2 THD+N = % max, F = khz, = 6 Ω 3 =-, =32 Ω, P out =6 mw, 2 Hz F 2 khz =-, =6 Ω, P out =9 mw, 2 Hz F 2 khz =-, 6 Ω, C b = µf, F = khz, V ripple = 2 mvpp =-, 6 Ω, C b = µf, F = 27 Hz, V ripple = 2 mvpp V OL : =32 Ω.23.3 V OH : =32 Ω V OL : =6 Ω V OH : =6 Ω A-weighted, = -, = 32 Ω, THD+N <.4%, 2 Hz F 2 khz =32 Ω, =- F= khz F = 2 Hz to 2 khz na mw % db V 5 db C i Input capacitance pf GBP Gain bandwidth product =32 Ω. MHz SR Slew rate, unity gain inverting =6 Ω.65 V/μs V IO Input offset voltage V icm = /2 2 mv t wu Wake-up time ms. Guaranteed by design and evaluation db DocID97 Rev 6 5/33 33

6 Electrical characteristics TS488, TS489 Table 5. Electrical characteristics at = +3.3 V with GND = V, T amb = 25 C (unless otherwise specified) () Symbol Parameter Conditions Min. Typ. Max. Unit I CC Supply current No input signal, no load ma I STBY P out THD+N PSRR V O SNR Standby current Output power Total harmonic distortion + noise Power supply rejection ratio, inputs grounded (2) Output swing Signal-to-noise ratio Crosstalk Channel separation No input signal, V STBY = GND for TS488, = 32 Ω No input signal, V STBY = for TS489, = 32 Ω THD+N =.% max, F = khz, =32 Ω 34 THD+N = % max, F = khz, =32 Ω 3 35 THD+N =.% max, F = khz, =6 Ω 55 THD+N = % max, F = khz, =6 Ω =-, =32 Ω, P out = 6 mw, 2 Hz F 2 khz =-, =6 Ω, P out = 35 mw, 2 Hz F 2 khz =-, 6 Ω, C b = µf, F = khz, V ripple =2 mvpp =-, 6 Ω, C b = µf, F = 27 Hz, V ripple =2 mvpp V OL : =32 Ω.5.2 V OH : =32 Ω V OL : =6 Ω V OH : =6 Ω A-weighted, =-, = 32 Ω, THD+N <.4%, 2 Hz F 2 khz =32 Ω, =- F = khz F = 2 Hz to 2 khz na mw % db V 2 db C i Input capacitance pf GBP Gain bandwidth product =32 Ω. MHz SR Slew rate, unity gain inverting =6 Ω.6 V/μs V IO Input offset voltage V icm = /2 2 mv t wu Wake-up time ms. All electrical values are guaranteed with correlation measurements at 2.5 V and 5 V. 2. Guaranteed by design and evaluation db 6/33 DocID97 Rev 6

7 TS488, TS489 Electrical characteristics Table 6. Electrical characteristics at = +2.5 V with GND = V, T amb = 25 C (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit I CC Supply current No input signal, no load ma I STBY P out THD+N PSRR V O SNR Standby current Output power Total harmonic distortion + noise Power supply rejection ratio, inputs grounded () Output swing Signal-to-noise ratio Crosstalk Channel separation No input signal, V STBY = GND for TS488, = 32 Ω No input signal, V STBY = for TS489, = 32 Ω THD+N =.% max, F = khz, =32 Ω 9 THD+N = % max, F = khz, =32 Ω 8 2 THD+N =.% max, F = khz, =6 Ω 3 THD+N = % max, F = khz, =6 Ω = -, =32 Ω, P out = mw, 2 Hz F 2 khz =-, =6 Ω, P out = 6 mw, 2 Hz F 2 khz = -, 6 Ω, C b = µf, F = khz, V ripple =2 mvpp = -, 6 Ω, C b = µf, F = 27 Hz, V ripple =2 mvpp V OL : =32 Ω V OH : =32 Ω V OL : =6 Ω V OH : =6 Ω A-weighted, = -, = 32 Ω, THD+N <.4%, 2 Hz F 2 khz =32 Ω, = - F = khz F = 2 Hz to 2 khz na mw % db V db C i Input capacitance pf GBP Gain bandwidth product =32 Ω. MHz SR Slew rate, unity gain inverting =6 Ω.6 V/μs V IO Input offset voltage V icm = /2 2 mv t wu Wake-up time ms. Guaranteed by design and evaluation db DocID97 Rev 6 7/33 33

8 Electrical characteristics TS488, TS489 Table 7. Index of graphics Description Figure Open-loop frequency response Figure 2 to Figure Power derating curves Figure 2 to Figure 3 Signal-to-noise ratio vs. power supply voltage Figure 4 to Figure 9 Power dissipation per channel Figure 2 to Figure 22 Power supply rejection ratio vs. frequency Figure 23 to Figure 25 Total harmonic distortion plus noise Figure 26 to Figure 43 Total harmonic distortion plus noise vs. frequency Figure 44 to Figure 52 Output power vs. load resistance Figure 53 to Figure 55 Output power vs. power supply voltage Figure 56, Figure 57 Output voltage swing vs. power supply voltage Figure 58 Current consumption vs. power supply voltage Figure 59 Current consumption vs. standby voltage Figure 6 to Figure 65 Crosstalk vs. frequency Figure 66 to Figure 77 8/33 DocID97 Rev 6

9 TS488, TS489 Electrical characteristics Figure 2. Open-loop frequency response Figure 3. Open-loop frequency response gain Vcc RL=6Ω gain Vcc RL=6Ω Gain (db) phase Phase ( ) Gain (db) phase Phase ( ) Figure 4. Open-loop frequency response Figure 5. Open-loop frequency response gain Vcc RL=6Ω CL=4pF gain Vcc RL=6Ω CL=4pF Gain (db) phase Phase ( ) Gain (db) phase Phase ( ) Figure 6. Open-loop frequency response Figure 7. Open-loop frequency response gain Vcc RL=32Ω gain Vcc RL=32Ω Gain (db) phase Phase ( ) Gain (db) phase Phase ( ) DocID97 Rev 6 9/33 33

10 Electrical characteristics TS488, TS489 Figure 8. Open-loop frequency response Figure 9. Open-loop frequency response gain Vcc RL=32Ω CL=4pF gain Vcc RL=32Ω CL=4pF Gain (db) phase Phase ( ) Gain (db) phase Phase ( ) Figure. Open-loop frequency response Figure. Open-loop frequency response gain Vcc RL=6Ω gain Vcc RL=6Ω Gain (db) phase Phase ( ) Gain (db) phase Phase ( ) Figure 2. Power derating curves Figure 3. Power derating curves Package Power Dissipation (W) No Heat sink 4-layer PCB MiniSO8 Package Power Dissipation (W) layer PCB No heatsink DFN Ambiant Temperature ( C) Ambiant Temperature ( C) /33 DocID97 Rev 6

11 TS488, TS489 Electrical characteristics Figure 4. Signal-to-noise ratio vs. power supply voltage Figure 5. Signal-to-noise ratio vs. power supply voltage Signal to Noise Ratio (db) A-weighted Filter Av=-, Cb=μF THD+N<.4% RL=32Ω RL=6Ω Signal to Noise Ratio (db) Unweighted Filter (2Hz-2kHz) Av=-, Cb=μF THD+N<.4% RL=32Ω RL=6Ω Power Supply Voltage (V) Power Supply Voltage (V) Figure 6. Signal-to-noise ratio vs. power supply voltage Figure 7. Signal-to-noise ratio vs. power supply voltage Signal to Noise Ratio (db) A-weighted Filter Av=-2, Cb=μF THD+N<.4% RL=32Ω RL=6Ω Signal to Noise Ratio (db) Unweighted Filter (2Hz-2kHz) Av=-2, Cb=μF THD+N<.4% RL=32Ω RL=6Ω Power Supply Voltage (V) Power Supply Voltage (V) Figure 8. Signal-to-noise ratio vs. power supply voltage Figure 9. Signal-to-noise ratio vs. power supply voltage Signal to Noise Ratio (db) A-weighted Filter Av=-4, Cb=μF THD+N<.4% RL=32Ω RL=6Ω Signal to Noise Ratio (db) Unweighted Filter (2Hz-2kHz) Av=-4, Cb=μF THD+N<.4% RL=32Ω RL=6Ω Power Supply Voltage (V) Power Supply Voltage (V) DocID97 Rev 6 /33 33

12 Electrical characteristics TS488, TS489 Figure 2. Power dissipation per channel Figure 2. Power dissipation per channel Power Dissipation (mw) Vcc, F=kHz, THD+N<% RL=32Ω RL=6Ω Power Dissipation (mw) Vcc, F=kHz, THD+N<% RL=6Ω RL=32Ω Figure 22. Power dissipation per channel Figure 23. Power supply rejection ratio vs. frequency Power Dissipation (mw) Vcc, F=kHz, THD+N<% RL=32Ω RL=6Ω PSRR (db) Inputs grounded, Av=-, RL=6Ω, Cb=μF, Vcc Vcc Vcc k k 2k Figure 24. Power supply rejection ratio vs. frequency Figure 25. Power supply rejection ratio vs. frequency - Inputs grounded, Vcc, RL=6Ω, Cb=μF, - Inputs grounded, Av=-, RL=6Ω, Vcc, PSRR (db) Av=- Av=-2 Av=-4 PSRR (db) Cb=μF Cb=47nF Cb=22nF Cb=nF k k 2k -8 2 k k 2k 2/33 DocID97 Rev 6

13 TS488, TS489 Electrical characteristics Figure 26. Total harmonic distortion plus noise Figure 27. Total harmonic distortion plus noise.. F=kHz, =6Ω =-, BW=2Hz-2kHz. F=2kHz, =6Ω =-, BW=2Hz-2kHz E Figure 28. Total harmonic distortion plus noise Figure 29. Total harmonic distortion plus noise.. F=kHz, =32Ω =-, BW=2Hz-2kHz. F=2kHz, =32Ω =-, BW=2Hz-2kHz E Figure 3. Total harmonic distortion plus noise Figure 3. Total harmonic distortion plus noise F=kHz, =6Ω =-, BW=2Hz-2kHz F=2kHz, =6Ω =-, BW=2Hz-2kHz.... E-3.. Output Voltage (V RMS ) E Output Voltage (V RMS ) 3 DocID97 Rev 6 3/33 33

14 Electrical characteristics TS488, TS489 Figure 32. Total harmonic distortion plus noise Figure 33. Total harmonic distortion plus noise.. F=kHz, =6Ω =-2, BW=2Hz-2kHz. F=2kHz, =6Ω =-2, BW=2Hz-2kHz E Figure 34. Total harmonic distortion plus noise Figure 35. Total harmonic distortion plus noise.. F=kHz, =32Ω =-2, BW=2Hz-2kHz. F=2kHz, =32Ω =-2, BW=2Hz-2kHz E Figure 36. Total harmonic distortion plus noise Figure 37. Total harmonic distortion plus noise. F=kHz, =6Ω =-2, BW=2Hz-2kHz F=2kHz, =6Ω =-2, BW=2Hz-2kHz.. E-3.. Output Voltage (V RMS ). 3.. Output Voltage (V RMS ) 3 4/33 DocID97 Rev 6

15 TS488, TS489 Electrical characteristics Figure 38. Total harmonic distortion plus noise Figure 39. Total harmonic distortion plus noise F=kHz, =6Ω =-4, BW=2Hz-2kHz F=2kHz, =6Ω =-4, BW=2Hz-2kHz.. E Figure 4. Total harmonic distortion plus noise Figure 4. Total harmonic distortion plus noise. F=kHz, =32Ω =-4, BW=2Hz-2kHz F=2kHz, =32Ω =-4, BW=2Hz-2kHz.. E Figure 42. Total harmonic distortion plus noise Figure 43. Total harmonic distortion plus noise. F=kHz, =6Ω =-4, BW=2Hz-2kHz F=2kHz, =6Ω =-4, BW=2Hz-2kHz.. E-3.. Output Voltage (V RMS ). 3.. Output Voltage (V RMS ) 3 DocID97 Rev 6 5/33 33

16 Electrical characteristics TS488, TS489 Figure 44. Total harmonic distortion plus noise vs. frequency Figure 45. Total harmonic distortion plus noise vs. frequency =6Ω, =- BW=2Hz-2kHz =32Ω, =- BW=2Hz-2kHz.. Vcc, Po=2mW Vcc, Po=4mW Vcc, Po=mW.. Vcc, Po=2mW Vcc, Po=25mW Vcc, Po=6mW E-3 2 k k 2k E-3 2 k k 2k Figure 46. Total harmonic distortion plus noise vs. frequency Figure 47. Total harmonic distortion plus noise vs. frequency =6Ω, =- BW=2Hz-2kHz =6Ω, =-2 BW=2Hz-2kHz.. Vcc, Vo=.7V RMS Vcc, Vo=V RMS Vcc, Po=.6V RMS.. Vcc, Po=2mW Vcc, Po=4mW Vcc, Po=mW E-3 2 k k 2k E-3 2 k k 2k Figure 48. Total harmonic distortion plus noise vs. frequency Figure 49. Total harmonic distortion plus noise vs. frequency =32Ω, =-2 BW=2Hz-2kHz =6Ω, =-2 BW=2Hz-2kHz. Vcc, Po=2mW Vcc, Po=25mW Vcc, Po=6mW. Vcc, Vo=.7V RMS Vcc, Vo=V RMS.. Vcc, Po=.6V RMS E-3 2 k k 2k E-3 2 k k 2k 6/33 DocID97 Rev 6

17 TS488, TS489 Electrical characteristics Figure 5. Total harmonic distortion plus noise vs. frequency Figure 5. Total harmonic distortion plus noise vs. frequency =6Ω, =-4 BW=2Hz-2kHz =32Ω, =-4 BW=2Hz-2kHz. Vcc, Po=2mW Vcc, Po=4mW. Vcc, Po=2mW Vcc, Po=25mW.. Vcc, Po=mW Vcc, Po=6mW E-3 2 k k 2k E-3 2 k k 2k Figure 52. Total harmonic distortion plus noise vs. frequency Figure 53. Output power vs. load resistance.. =6Ω, =-4 BW=2Hz-2kHz Vcc, Vo=.7V RMS Vcc, Vo=V RMS THD+N=% THD+N=% Vcc, F=kHz BW=2Hz-2kHz Vcc, Po=.6V RMS E-3 2 k k 2k Load Resistance (Ω) Figure 54. Output power vs. load resistance Figure 55. Output power vs. load resistance THD+N=% THD+N=% Vcc, F=kHz BW=2Hz-2kHz THD+N=% THD+N=% Vcc, F=kHz BW=2Hz-2kHz Load Resistance (Ω) Load Resistance (Ω) DocID97 Rev 6 7/33 33

18 Electrical characteristics TS488, TS489 Figure 56. Output power vs. power supply voltage Figure 57. Output power vs. power supply voltage =6Ω, F=kHz BW=2Hz-2kHz THD+N=% =32Ω, F=kHz BW=2Hz-2kHz THD+N=% 4 THD+N=% 2 THD+N=% Power Supply Voltage (V) Power Supply Voltage (V) Figure 58. Output voltage swing vs. power supply voltage Figure 59. Current consumption vs. power supply voltage 6 3 No Loads = 85 C = 25 C V OH & V OL (V) RL=6Ω RL=32Ω Current Consumption (ma) 2 = -4 C Power Supply Voltage (V) Figure 6. Current consumption vs. standby voltage Power Supply Voltage (V) Figure 6. Current consumption vs. standby voltage 2.5 Current Consumption (ma) TS488, =85 C TS488, TS488, =-4 C Current Consumption (ma) TS489, =85 C TS489, TS489, =-4 C Standby Voltage (V) Standby Voltage (V) 8/33 DocID97 Rev 6

19 TS488, TS489 Electrical characteristics Figure 62. Current consumption vs. standby voltage Figure 63. Current consumption vs. standby voltage Current Consumption (ma) 2.5 TS488, =85 C 2. TS488,.5 TS488, =-4 C Current Consumption (ma) TS489, =85 C 2.5 TS489, 2. TS489, =-4 C Standby Voltage (V) Standby Voltage (V) Figure 64. Current consumption vs. standby voltage Figure 65. Current consumption vs. standby voltage Current Consumption (ma) TS488, =85 C TS488, TS488, =-4 C Current Consumption (ma) TS489, =85 C TS489, TS489, =-4 C Standby Voltage (V) Standby Voltage (V) Figure 66. Crosstalk vs. frequency Figure 67. Crosstalk vs. frequency -2 Vcc, RL=6Ω Av=-, Po=2mW -2 Vcc, RL=32Ω Av=-, Po=2mW Crosstalk (db) OUT2 to OUT OUT to OUT2 Crosstalk (db) OUT2 to OUT OUT to OUT k k 2k -2 2 k k 2k DocID97 Rev 6 9/33 33

20 Electrical characteristics TS488, TS489 Figure 68. Crosstalk vs. frequency Figure 69. Crosstalk vs. frequency -2 Vcc, RL=6Ω Av=-, Po=4mW -2 Vcc, RL=32Ω Av=-, Po=25mW Crosstalk (db) OUT2 to OUT OUT to OUT2 Crosstalk (db) OUT2 to OUT OUT to OUT k k 2k -2 2 k k 2k Figure 7. Crosstalk vs. frequency Figure 7. Crosstalk vs. frequency -2 Vcc, RL=6Ω Av=-, Po=mW -2 Vcc, RL=32Ω Av=-, Po=6mW Crosstalk (db) OUT2 to OUT OUT to OUT2 Crosstalk (db) OUT2 to OUT OUT to OUT k k 2k -2 2 k k 2k Figure 72. Crosstalk vs. frequency Figure 73. Crosstalk vs. frequency -2 Vcc, RL=6Ω Av=-4, Po=2mW -2 Vcc, RL=32Ω Av=-4, Po=2mW Crosstalk (db) OUT2 to OUT OUT to OUT2 Crosstalk (db) OUT2 to OUT OUT to OUT k k 2k -2 2 k k 2k 2/33 DocID97 Rev 6

21 TS488, TS489 Electrical characteristics Figure 74. Crosstalk vs. frequency Figure 75. Crosstalk vs. frequency -2 Vcc, RL=6Ω Av=-4, Po=4mW -2 Vcc, RL=32Ω Av=-4, Po=25mW Crosstalk (db) OUT2 to OUT OUT to OUT2 Crosstalk (db) OUT2 to OUT OUT to OUT k k 2k -2 2 k k 2k Figure 76. Crosstalk vs. frequency Figure 77. Crosstalk vs. frequency -2 Vcc, RL=6Ω Av=-4, Po=mW -2 Vcc, RL=32Ω Av=-4, Po=6mW Crosstalk (db) OUT2 to OUT OUT to OUT2 Crosstalk (db) OUT2 to OUT OUT to OUT k k 2k -2 2 k k 2k DocID97 Rev 6 2/33 33

22 Application information TS488, TS489 4 Application information 4. Power dissipation and efficiency Hypotheses: Voltage and current in the load are sinusoidal (V out and I out ). Supply voltage is a pure DC source ( ). Regarding the load we have: V OUT = V PEAK sinωtv ( ) and I OUT = V OUT ( A) and P OUT = 2 V PEAK ( A) 2 The average current delivered by the power supply voltage is: π I CCAVG V PEAK = sin() t dt 2π = V PEAK ( A) π Figure 78. Current delivered by power supply voltage in single-ended configuration Icc (t) Vpeak/ Icc AVG T/2 T 3T/2 2T Time The power delivered by power supply voltage is: P supply = I CCAVG ( W) So, the power dissipation by each power amplifier is P diss = P supply P OUT ( W) P diss = P OUT P OUT ( W) π and the maximum value is obtained when: P diss = P OUT 22/33 DocID97 Rev 6

23 TS488, TS489 Application information and its value is: P dissmax = π 2 ( W) Note: This maximum value depends only on power supply voltage and load values. The efficiency is the ratio between the output power and the power supply: η P OUT = = P supply πv peak The maximum theoretical value is reached when V peak = /2, so π η = -- = 78.5% Total power dissipation The TS488/9 is stereo (dual channel) amplifier. It has two independent power amplifiers. Each amplifier produces heat due to its power dissipation. Therefore the maximum die temperature is the sum of each amplifier s maximum power dissipation. It is calculated as follows: P diss R = Power dissipation due to the right channel power amplifier. P diss L = Power dissipation due to the left channel power amplifier. Total P diss =P diss R +P diss L (W) Typically, P diss R is equal to P diss L, giving: TotalP diss = 2P dissr = 2P dissl 2 2 TotalP diss = P OUT 2P OUT π 4.3 Lower cutoff frequency The lower cutoff frequency F CL of the amplifier depends on input capacitors C in and output capacitors C out. The input capacitor C in (output capacitor C out ) in serial with the input resistor R in (load resistor ) of the amplifier is equivalent to a first order high pass filter. Assuming that F CL is the lowest frequency to be amplified (with a 3 db attenuation), the minimum value of the C in (C out ) is: C in = π F CL R in C out = π F CL DocID97 Rev 6 23/33 33

24 Application information TS488, TS489 Figure 79. Lower cutoff frequency vs. input capacitor Figure 8. Lower cutoff frequency vs. output capacitor Lower Cut-off frequency (Hz) k k Rin=kΩ Rin=2kΩ Rin=5kΩ Rin=kΩ Lower Cut-off frequency (Hz) k k =6Ω =32Ω =6Ω Cin (nf). Cout (μf) Note: In case F CL is kept the same for calculation, It must be taken in account that the st order high-pass filter on the input and the st order high-pass filter on the output create a 2nd order high-pass filter in the audio signal path with an attenuation 6 db on F CL and a roll-off 4db decade. 4.4 Higher cutoff frequency In the high-frequency region, you can limit the bandwidth by adding a capacitor C feed in parallel with R feed. It forms a low-pass filter with a -3 db cutoff frequency F CH. Assuming that F CH is highest frequency to be amplified (with a 3 db attenuation), the maximum value of C feed is: F CH = π R feed C feed Figure 8. Higher cutoff frequency vs. feedback capacitor k Higher Cut-off Frequency (khz) k k Rfeed=4kΩ Rfeed=8kΩ Rfeed=kΩ Rfeed=2kΩ.. Cfeed (μf) 24/33 DocID97 Rev 6

25 TS488, TS489 Application information 4.5 Gain setting In the flat frequency response region (with no effect from C in, C out, C feed ), the output voltage is: The gain is: R feed V OUT = V IN = V IN R in = R feed R in Decoupling of the circuit Note: Two capacitors are needed to properly bypass the TS488 (TS489), a power supply capacitor C s and a bias voltage bypass capacitor C b. C s has a strong influence on the THD+N in the high frequency range (above 7kHz) and indirectly on the power supply disturbances. With µf, you can expect THD+N performance to be similar to the one shown in the datasheet. If C s is lower than µf, the THD+N increases in the higher frequencies and disturbances on the power supply rail are less filtered. On the contrary, if C s is higher than µf, the disturbances on the power supply rail are more filtered. C b has an influence on the THD+N in the low frequency range. Its value is critical on the PSRR with grounded inputs in the lower frequencies: If C b is lower than µf, the THD+N improves and the PSRR worsens. If C b is higher than µf, the benefit on the THD+N and PSRR is small. The input capacitor C in also has a significant effect on the PSRR at lower frequencies. The lower the value of C in, the higher the PSRR. 4.7 Standby mode When the standby mode is activated an internal circuit of the TS488 (TS489) is charged (see Figure 82). A time required to change the internal circuit is a few microseconds. Figure 82. Internal equivalent schematic of the TS488 (TS489) in standby mode TS488/9 Vin Vout 25K 6K BYPASS GND 25K 6K Vin2 Vout2 DocID97 Rev 6 25/33 33

26 Application information TS488, TS Wake-up time When the standby is released to put the device ON, the bypass capacitor C b is charged immediately. As C b is directly linked to the bias of the amplifier, the bias will not work properly until the C b voltage is correct. The time to reach this voltage plus a time delay of 2 ms (pop precaution) is called the wake-up time or t WU ; it is specified in the electrical characteristics table with C b = µf. If C b has a value other than µf, t WU can be calculated by applying the following formulas or can be read directly from Figure 83. C b 2.5 t WU = [ms;μf ].325 Figure 83. Typical wake-up time vs. bypass capacitance 4 35 Wake-up Time (ms) Cb (μf) Note: It is assumed that the C b voltage is equal to V. If the C b voltage is not equal to V, the wake-up time is shorter. 4.9 POP performance Pop performance is closely related to the size of the input capacitor C in. The size of C in is dependent on the lower cutoff frequency and PSRR values requested. In order to reach low pop, C in must be charged to /2 in less than 2 ms. To follow this rule, the equivalent input constant time (R in C in ) should be less then 6.7 ms: τ in = R in xc in <.67 (s) Example calculation: In the typical application schematic R in is 2 kω and C in is 33 nf. The lower cutoff frequency (-3 db attenuation) is given by the following formula: F CL = π R in C in With the values above, the result is F CL = 25 Hz. In this case, τ in = R in xc in =6.6 ms. This value is sufficient with regard to the previous formula, thus we can state that the pop is imperceptible. 26/33 DocID97 Rev 6

27 TS488, TS489 Application information 4. Connecting the headphones Note: Generally headphones are connected using jack connectors. To prevent a pop in the headphones when plugging in the jack, a pulldown resistor should be connected in parallel with each headphone output. This allows the capacitors C out to be charged even when the headphones are not plugged in. Pulldown resistors with a value of kω are high enough to be a negligible load, and low enough to charge the capacitors C out in less than one second. The pop&click reduction circuitry works properly only when both channels have the same value for the external components C in, C out, R load and R pulldown. DocID97 Rev 6 27/33 33

28 Package information TS488, TS489 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 28/33 DocID97 Rev 6

29 TS488, TS489 Package information 5. MiniSO-8 package information DocID97 Rev 6 29/33 33

30 Package information TS488, TS DFN8 package information Figure 84. DFN8 (2 x 2 mm, pitch.5 mm) package outline Table 8. DFN8 (2 x 2 mm, pitch.5 mm) package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A A.5.2 A3.5.6 b D D E E e.5.2 L ddd.8.3 3/33 DocID97 Rev 6

31 TS488, TS489 Ordering information 6 Ordering information Table 9. Order codes Order code Temperature range Package Packing Marking TS488IST MiniSO-8 K488-4 C to +85 C Tape & reel TS488IQT DFN8 K88 DocID97 Rev 6 3/33 33

32 Revision history TS488, TS489 7 Revision history Table. Document revision history Date Revision Changes 2-Jan-26 First release corresponding to the product preview version. -Feb Aug-26 3 Removal of typical application schematic on first page (it appears in Figure on page 3). Minor grammatical and formatting corrections throughout. Update of marking. Update of DFN8 package height. Editorial update. 5-Sep-26 4 Revision corresponding to the release to production of the TS488 - TS May Apr-27 6 Removed obsolete part numbers TS489IQT and TS489IST from the cover page and Table 8: Order codes. Updated ECOPACK text in Section 5: Package mechanical data. Updated package in Section 5.2: DFN8 package. Updated Section 5.2: DFN8 package information: "L" dimension changed from.5 mm to.425 mm. Minor changes throughout the document. 32/33 DocID97 Rev 6

33 TS488, TS489 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 27 STMicroelectronics All rights reserved DocID97 Rev 6 33/33 33