LNA_024_04 24 GHz Low-Noise-Amplifier in Silicon Germanium Technology

Transcription

1 Silicon Radar GmbH Im Technologiepark Frankfurt (Oder) Germany fon fax LNA_024_04 24 GHz Low-Noise-Amplifier in Silicon Germanium Technology Status: Date: Author: final Silicon Radar GmbH Version: Document number: Filename: Page: 1.0 T293 LNA_024_04 Datenblatt LNA_024_04 1 of

2 Table of Contents 1 Features Overview Applications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Integrity RF Characteristics Application Circuit and Block Diagram Package Outline Pin Description Application Circuit Schematic Evaluation Board Physical Characteristics Mechanical Data QFN Mechanical Data QFN Recommended Land Pattern Measurement Results Disclaimer List of Tables Table 1 Absolute Maximum Ratings... 5 Table 2 Thermal Resistance... 5 Table 3 ESD Integrity... 5 Table 4 Typical Characteristics... 6 Table 5 Pin Description... 7 List of Figures Figure 1 LNA_024_04 Circuit Diagram... 4 Figure 2 LNA_024_04 Package outline (top view)... 7 Figure 3 LNA_024_04 Application Circuit (Top view)... 8 Figure 4 LNA_024_04 Evaluation board stack-up... 9 Figure 5 TRX_024_06 Evaluation Board Layout (Top view) including via holes (for version packaged in 8 lead DFN)... 9 Figure 6 Mechanical data QFN 16 Lead 3x3mm 0.5 pitch Figure 7 Simulation results of LNA for high and low gain setting

3 1 Features Low Noise Amplifier for 24 GHz ISM band Single supply voltage of 3.3V Fully ESD protected device Low power consumption of 5,7mA Digital gain control Power down mode Fast on/off switching for pulsed operation QFN-16 leadless plastic package 3x3mm 2 Pb-free (RoHS compliant) package IC is available as bare die as well 1.1 Overview The LNA is a two stage amplifier operating in two gain modes (high gain and low gain) with power down feature. The first stage employs a cascode configuration with inductive load and inductive emitter degeneration for stability reasons. The input matching network of the LNA consist of shunt inductor and series capacitor. The input shunt inductor provides ESD protection. In order to provide compact design and galvanic isolation between amplifier stages transformers were used for interstage coupling and output matching. The second stage is a common-base structure with two gain states. This stage is loaded with a transformer providing appropriate output impedance. The gain mode is defined by an external digital signal Vctrl and appropriate digital circuitry. The LNA can be powered down via PWR pin. 1.2 Applications The main use of the LNA is in wireless communication systems and in radar systems for the ISMband at 24GHz and for UWB-systems up to 29 GHz

4 VCC PWR Vctrl Control unit Vbc1 Vb1 Vb2 Vb2 RFout Vbc1 RFin Vb1 Figure 1 LNA_024_04 Circuit Diagram - 4 -

5 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Vcc= 3.3V and T A = 25 C unless otherwise noted Table 1 Absolute Maximum Ratings Parameter Symbol Min. Typ. Max. Unit Remarks / Condition Supply Voltage V cc V to GND DC voltage at RF Pins V DCRF V Operating temperature range T use C Industrial Storage temperature range T store C Junction temperature T junc +150 C Input power into pin RFin P IN dbm DC voltage at control inputs V ctl V Vctrl, PWR Supply current consumption I CC ma IC provides low ohmic circuit to GND for RFin and RFout Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Min. Typ. Max. Unit Remarks / Condition Thermal resistance from junction to soldering point R thjs K/W see application notes 2.3 ESD Integrity Table 3 ESD Integrity Parameter Symbol Min. Typ. Max. Unit Remarks / Condition ESD robustness of RFout, RFin V ESD, RF 2 kv HBM 1) ESD robustness of supply pin V ESD;supply 2 kv HBM ESD robustness of control pins Vctrl, PWR V ESD;control 1.3 kv HBM 1) According to ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity Testing, Human Body Model (HBM) Component Level, ANSI/ESDA/JEDEC JS

6 3 RF Characteristics Vcc= 3.3V and T A = 25 C unless otherwise noted Table 4 Typical Characteristics Parameter Symbol Min. Typ. Max. Unit Remarks / Condition Frequency range 3dB f 3dB GHz Input impedance Z in 50 Output impedance Z out 50 Number of adjustable gain modes Gain in high gain Gain in low gain 2 Vctrl high or low * s21 H db V ctrl =3.3 V* s21 L db V ctrl =0 V* Noise figure high gain mode NF H 3.2 V ctrl =3.3 V*, simulated Noise figure low gain mode NF L 5 V ctrl =0 V*, simulated Input return loss S ph(s11) Output return loss S ph(s22) Input Compression Point CP I * - Logic inputs Vctrl and PWR low = 0 to 0.4V, high =Vcc to (Vcc 0.4V) - 6 -

7 Vctrl VCC PWR GND GND GND GND GND 24GHz Low Noise Amplifier LNA_024_04 4 Application Circuit and Block Diagram 4.1 Package Outline GND GND 4 RF_in RF_out RF_in RF_out 12 GND GND GND Figure 2 LNA_024_04 Package outline (top view) 4.2 Pin Description Table 5 Pin No. Pin Description Name Description 1 GND Ground 2 RFout RF output, 50 Ohm 3 RFout pin 2 and 3 have to be shorted on board close to the QFN-package 4 GND Ground 5 GND Ground 6 GND Ground 7 GND Ground 8 PWR Power down, V PWR =high: power down state, V PWR =low: on-state 9 GND Ground 10 RFin RF input, 50 Ohm 11 RFin pin 10 and 11 have to be shorted on board close to the QFN-package 12 GND Ground 13 Vctrl Gain control, V ctrl =high: high gain, V ctrl =low: low gain state 14 GND Ground 15 GND Ground 16 VCC Supply voltage EDP GND Exposed die pad connected to Ground - 7 -

8 4.3 Application Circuit Schematic Vcc +3.3V R1 4.7k RFin RFout Vcc +3.3V R1 4.7k Vcc +3.3V C1 100pF C2 1nF C3 1uF Figure 3 LNA_024_04 Application Circuit (Top view) - 8 -

9 4.4 Evaluation Board Cu µm Rogers RO 4003C 200 µm Prepreg FR mm Top Silkscreen Solder Mask Top Copper Inner Copper 1 Inner Copper 2 Bottom Copper Figure 4 LNA_024_04 Evaluation board stack-up 45mm 40mm Figure 5 LNA_024_04 Evaluation Board Layout (Top view) including via holes - 9 -

10 5 Physical Characteristics 5.1 Mechanical Data QFN Figure 6 Mechanical data QFN 14 Lead 3x3mm 0.5 pitch

11 5.2 Mechanical Data QFN Figure 7 Mechanical data QFN 14 Lead 3x3mm 0.5 pitch

12 5.3 Recommended Land Pattern 0.5mm PIN8 PIN7 PIN6 PIN5 PIN9 PIN4 0.25mm 0.6mm PIN10, mm PIN2,3 0.75mm 0.85mm PIN12 PIN1 1mm PIN13 PIN14 PIN14 PIN15 Figure 8 Recommended Land Pattern of the LNA on Rogers RO mil substrate

13 Output Power, dbm 24GHz Low Noise Amplifier LNA_024_04 6 Measurement Results Measurement results of LNA for high and low gain setting: Linearity 10,00 5,00 0,00-5,00-10,00-15,00-20,00 HG LG 1dB ICP HG = -9dBm 1dB ICP LG = -6.5dBm -25,00 Simulated Noise Figure -30, Input Power, dbm Figure 9 Measurement results of LNA for high and low gain setting

14 7 Disclaimer Silicon Radar GmbH The information contained herein is subject to change at any time without notice. Silicon Radar GmbH assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a Silicon Radar GmbH product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by Silicon Radar GmbH under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: Silicon Radar GmbH makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any Silicon Radar product and any product documentation. products sold by Silicon Radar are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SILICON RADAR GMBH'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. Silicon Radar GmbH owns all rights, title and interest to the intellectual property related to Silicon Radar GmbH's products, including any software, firmware, copyright, patent, or trademark. The sale of Silicon Radar GmbH products does not convey or imply any license under patent or other rights. Silicon Radar GmbH retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by Silicon Radar GmbH. Unless otherwise agreed to in writing by Silicon Radar GmbH, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited