Bottom-up Nanostructures just a research hype?
|
|
- Ruby Dennis
- 6 years ago
- Views:
Transcription
1 Fakultät Maschinenwesen, Institut für Werkstoffwissenschaft, Professur Materialwissenschaft u. Nanotechnik Bottom-up Nanostructures just a research hype? Dr.-Ing. Alexander Nerowski Dresden, Pd Coaly flower
2 Why (bottom-up) Nano? Today s applications of nanotechnology Zinc-Oxide Nanoparticles UV light diffraction Lotos effect (paint, cars ) Catalyst Dr. A. Nerowski Folie Nr. 2/19
3 Top-Down vs. Bottom-Up E Photoresist Substrate Silicon Nanowire 5 nm R. G. Hobbs et al. Chem. Mater. 24, 1975 (2012) Well defined, integrated structures For < 500 nm: relatively expensive equipment (e.g. e-beam lithography) Surface tension, external fields Silicon Nanowire with 3D kink 200 nm Relatively well defined structures 3D structures feasible Hard to integrate into microcircuits B. Tian et al. Science 329, 830 (2010) Dr. A. Nerowski Folie Nr. 3/19
4 Content 1. (Example for) Fabrication of Metal Nanowires 2. (Example for) Metal Nanowire Sensor Application 3. (Example for) Silicon Nanowire Sensor Application 4. Conclusion & Outlook Dr. A. Nerowski Folie Nr. 4/19
5 1. Fabrication of Metal Nanowires Combining bottom-up and top-down Au Au Insulating substrate Dr. A. Nerowski Folie Nr. 5/19
6 1. Fabrication of Metal Nanowires Combining bottom-up and top-down Pt containing solution Au Au Insulating substrate Dr. A. Nerowski Folie Nr. 6/19
7 1. Fabrication of Metal Nanowires Combining bottom-up and top-down V 0, f ~ Pt containing solution Au Pt nanowire Insulating substrate Au Advantages Integration Costs Speed Conditions (T, p) Dr. A. Nerowski Folie Nr. 7/19
8 1. Fabrication of Metal Nanowires Combining bottom-up and top-down V 0, f ~ Pt containing solution Au Pt nanowire Insulating substrate Au Advantages Integration Costs Speed Conditions (T, p) Dr. A. Nerowski Folie Nr. 8/19
9 1. Fabrication of Metal Nanowires Challenges 2 µm 1 µm 1 µm Growth influenced by many parameters Voltage Frequency Solution type Concentration of solution Goal: growth control straight, thin and unbranched wires Dr. A. Nerowski Folie Nr. 9/19
10 1. Fabrication of Metal Nanowires Nanowire is modeled as sphere capacitor Flux of Pt complexes j is influenced by: r 0 r Dielectrophoretic force Concentration gradient F DEP c Tip Boundary conditions: A. Nerowski & M. Poetschke et al. Langmuir 28, 7498 (2012) Far from tip (r ): bulk concentration c At tip surface: reaction rate k r (T) Resulting differential equation for concentration c: 2 cr () r L FDEP kbt log 0 r r c Convection Diffusion Dr. A. Nerowski Folie Nr. 10/19
11 Growth velocity v g [nm/s] 1. Fabrication of Metal Nanowires Growth kinetics temperature dependence Reaction limitation Diffusion limitation 30 Experimental data for c = 10 µm Fitted curves Temperature T [K] Qualitative agreement with theory A. Nerowski & M. Poetschke et al. Langmuir 28, 7498 (2012) Dr. A. Nerowski Folie Nr. 11/19
12 1. Fabrication of Metal Nanowires Morphology: Signal variation N=2 N=3 N=5 N Scalebars: 500 nm Variation of voltage slope during polarity change Morphology from branched to straight A. Nerowski et al. Langmuir 30, 5655 (2014) 200 nm 20 nm Dr. A. Nerowski Folie Nr. 12/19
13 2. Metal Nanowire Sensor Application Impedimetric nanobiosensor 2 µm Solution with bacteria 120 nm Nanogap with bacterium.5 µm Production of nanogap using electromigration Dielectrophoretic attraction of nanoscaled objects into gap Electrical impedance measurement of single objects A. Nerowski et al., Utility patent DE Dr. A. Nerowski Folie Nr. 13/19
14 -Reactance X p [GΩ] 2. Metal Nanowire Sensor Application µm Before trapping Frequency f [Hz] After trapping Impedance spectroscopy of E. Coli reveals parallel RC-circuit in accordance with literature (50 GΩ, 3 ff) High frequencies: substrate resistance is equal to analyte resistance A. Nerowski et al., Utility patent DE Dr. A. Nerowski Folie Nr. 14/19
15 3. Silicon Nanowire Sensor Application Microfluidic ph sensor(s) Bubbles with analyte pass nanostructures Sensitive, optics-less analysis of biochemical processes Use of a single device for thousands of independent sensors J. Schuett et al. Nano Lett. 16, 4991 (2016) Dr. A. Nerowski Folie Nr. 15/19
16 3. Silicon Nanowire Sensor Application Droplet microfluidics with silicon nanowire based FET Increase in current when droplet passes Current characteristics dependent on size of droplet Current amplitude dependent on content of bubble Here: ph-sensor, but also others feasible J. Schuett et al. Nano Lett. 16, 4991 (2016) Dr. A. Nerowski Folie Nr. 16/19
17 Conclusion for Bottom-Up Nanotechnology Research hype? Already: Fabrication of controlled bottom-up nanostructures on industry scale Electronics like OLED TVs Research in applications still ongoing: Biosensorics Chemosensorics ToDo: Environmental sustainability/health, longevity Dr. A. Nerowski Folie Nr. 17/19
18 Acknowledgements Thanks to: Prof. Cuniberti, Dr. Baraban, Dr. Bobeth and my PhD colleagues at Max- Bergmann-Center! This work was supported by the European Union (European Social Fund) and the Free State of Saxony (Sächsische Aufbaubank) in the young researcher group "InnovaSens" (SAB-Nr ). Support from the German Excellence Initiative via the Cluster of Excellence EXC 1056 "Center for Advancing Electronics Dresden" (cfaed) is gratefully acknowledged. Funded by the European Union and the Free State of Saxony
Parallel Alignment of Nanowires for Fast Fabrication of Nanowire Based Gas Sensors
Parallel Alignment of Nanowires for Fast Fabrication of Nanowire Based Gas Sensors R. Jiménez-Díaz 1, J.D. Prades 1 F. Hernández-Ramírez, J. Santander 3 C. Calaza 3, L. Fonseca 3, C. Cané 3 A. Romano-Rodriguez
More informationZinc Oxide Nanowires Impregnated with Platinum and Gold Nanoparticle for Ethanol Sensor
CMU. J.Nat.Sci. Special Issue on Nanotechnology (2008) Vol. 7(1) 185 Zinc Oxide Nanowires Impregnated with Platinum and Gold Nanoparticle for Ethanol Sensor Weerayut Wongka, Sasitorn Yata, Atcharawan Gardchareon,
More informationSupplementary information for: Surface passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
Supplementary information for: Surface passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon Jeppe V. Holm 1, Henrik I. Jørgensen 1, Peter Krogstrup 2, Jesper Nygård 2,4,
More informationSYNTHESIS AND ANALYSIS OF SILICON NANOWIRES GROWN ON Si (111) SUBSTRATE AT DIFFERENT SILANE GAS FLOW RATE
SYNTHESIS AND ANALYSIS OF SILICON NANOWIRES GROWN ON Si (111) SUBSTRATE AT DIFFERENT SILANE GAS FLOW RATE Habib Hamidinezhad*, Yussof Wahab, Zulkafli Othaman and Imam Sumpono Ibnu Sina Institute for Fundamental
More information4.1.2 InAs nanowire circuits fabricated by field-assisted selfassembly on a host substrate
22 Annual Report 2010 - Solid-State Electronics Department 4.1.2 InAs nanowire circuits fabricated by field-assisted selfassembly on a host substrate Student Scientist in collaboration with R. Richter
More informationIMAGING SILICON NANOWIRES
Project report IMAGING SILICON NANOWIRES PHY564 Submitted by: 1 Abstract: Silicon nanowires can be easily integrated with conventional electronics. Silicon nanowires can be prepared with single-crystal
More informationSemiconductor Physics and Devices
Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because
More informationNanoFocus Inc. Next Generation Scanning Probe Technology. Tel : Fax:
NanoFocus Inc. Next Generation Scanning Probe Technology www.nanofocus.kr Tel : 82-2-864-3955 Fax: 82-2-864-3956 Albatross SPM is Multi functional research grade system Flexure scanner and closed-loop
More informationNanostencil Lithography and Nanoelectronic Applications
Microsystems Laboratory Nanostencil Lithography and Nanoelectronic Applications Oscar Vazquez, Marc van den Boogaart, Dr. Lianne Doeswijk, Prof. Juergen Brugger, LMIS1 Dr. Chan Woo Park, Visiting Professor
More informationSYNTHESIS AND CHARACTERIZATION OF II-IV GROUP AND SILICON RELATED NANOMATERIALS
SYNTHESIS AND CHARACTERIZATION OF II-IV GROUP AND SILICON RELATED NANOMATERIALS ISMATHULLAKHAN SHAFIQ MASTER OF PHILOSOPHY CITY UNIVERSITY OF HONG KONG FEBRUARY 2008 CITY UNIVERSITY OF HONG KONG 香港城市大學
More informationApplication of bow-tie surface plasmon antenna to silicon on insulator nanowire photodiode for enhanced light absorption
LETTER IEICE Electronics Express, Vol.15, No.11, 1 10 Application of bow-tie surface plasmon antenna to silicon on insulator nanowire photodiode for enhanced light absorption Yash Sharma 1, Hiroaki Satoh
More informationA scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect
A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect Ting Xie 1, a), Michael Dreyer 2, David Bowen 3, Dan Hinkel 3, R. E. Butera
More informationVertically Aligned BaTiO 3 Nanowire Arrays for Energy Harvesting
Electronic Supplementary Material (ESI) for Electronic Supplementary Information (ESI) Vertically Aligned BaTiO 3 Nanowire Arrays for Energy Harvesting Aneesh Koka, a Zhi Zhou b and Henry A. Sodano* a,b
More informationSupplementary Information
Supplementary Information Synthesis of hybrid nanowire arrays and their application as high power supercapacitor electrodes M. M. Shaijumon, F. S. Ou, L. Ci, and P. M. Ajayan * Department of Mechanical
More informationTransparent p-type SnO Nanowires with Unprecedented Hole Mobility among Oxide Semiconductors
Supplementary Information Transparent p-type SnO Nanowires with Unprecedented Hole Mobility among Oxide Semiconductors J. A. Caraveo-Frescas and H. N. Alshareef* Materials Science and Engineering, King
More informationSynthesis of Silicon. applications. Nanowires Team. Régis Rogel (Ass.Pr), Anne-Claire Salaün (Ass. Pr)
Synthesis of Silicon nanowires for sensor applications Anne-Claire Salaün Nanowires Team Laurent Pichon (Pr), Régis Rogel (Ass.Pr), Anne-Claire Salaün (Ass. Pr) Ph-D positions: Fouad Demami, Liang Ni,
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements Erik C. Garnett 1, Yu-Chih Tseng 4, Devesh Khanal 2,3, Junqiao Wu 2,3, Jeffrey
More informationSupplementary Information
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Supplementary Information Single-crystalline CdTe nanowire field effect transisitor
More informationSaxony the Organic Electronics State
Saxony the Organic Electronics State Page 1 Agenda 1. History 2. The situation today: a major cluster in Europe 3. Saxony a dynamic place to be 4. OES at your service 5. Why to join Page 2 Downtown Dresden
More informationLow-Power Heating for Conductometric Gas Nano Sensors: Self-Heating Effects and Others
TITLE Low-Power Heating for Conductometric Gas Nano Sensors: Self-Heating Effects and Others SPEAKER O. Monereo, N. Markiewicz, J. Samà, O. Casals, C. Fàbrega, F. Hernandez-Ramírez, A. Cirera, A. Romano-Rodríguez,
More informationImpact of the light coupling on the sensing properties of photonic crystal cavity modes Kumar Saurav* a,b, Nicolas Le Thomas a,b,
Impact of the light coupling on the sensing properties of photonic crystal cavity modes Kumar Saurav* a,b, Nicolas Le Thomas a,b, a Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde
More informationNanowire Growth for Sensor Arrays
To appear in Nanofabrication Technologies, Ed. E. A. Dobisz, SPIE Proceedings 5220, pp. xxx (2003, in press) Nanowire Growth for Sensor Arrays Minhee Yun a*, Nosang V. Myung a, Richard P. Vasquez a, Jianjun
More informationHow Can Nanotechnology Help Solve Problems in Energy Storage?
How Can Nanotechnology Help Solve Problems in Energy Storage? From Fundamental Studies to Electrode Design Candace K. Chan Assistant Professor Materials Science & Engineering School for Engineering of
More informationresearch in the fields of nanoelectronics
FRAUNHOFEr center Nanoelectronic Technologies research in the fields of nanoelectronics 1 contents Fraunhofer CNT in Profile 3 Competence Areas Analytics 4 Functional Electronic Materials 5 Device & Integration
More informationNanoOptics: Illuminating Nanostructures
NanoOptics: Illuminating Nanostructures Martin Moskovits Chief Technology Officer, API Nanotronics Corp. 2009 International Conference on Nanotechnology for the Forest Products Industry Edmonton, Alberta,
More informationSpontaneous Hyper Emission: Title of Talk
Spontaneous Hyper Emission: Title of Talk Enhanced Light Emission by Optical Antennas Ming C. Wu University of California, Berkeley A Science & Technology Center Where Our Paths Crossed Page Nanopatch
More informationUsing Ink-Jet Printing and Nanoimprinting for Microsystems
Faculty of Electrical and Computer Engineering Institute of Semiconductor and Microsystems Technology Using Ink-Jet Printing and Nanoimprinting for Microsystems R. Kirchner*, A. Türke, W.-J. Fischer Institute
More informationHighly efficient SERS nanowire/ag composites
Highly efficient SERS nanowire/ag composites S.M. Prokes, O.J. Glembocki and R.W. Rendell Electronics Science and Technology Division Introduction: Optically based sensing provides advantages over electronic
More informationThe effect of the diameters of the nanowires on the reflection spectrum
The effect of the diameters of the nanowires on the reflection spectrum Bekmurat Dalelkhan Lund University Course: FFF042 Physics of low-dimensional structures and quantum devices 1. Introduction Vertical
More informationwrite-nanocircuits Direct-write Jaebum Joo and Joseph M. Jacobson Molecular Machines, Media Lab Massachusetts Institute of Technology, Cambridge, MA
Fab-in in-a-box: Direct-write write-nanocircuits Jaebum Joo and Joseph M. Jacobson Massachusetts Institute of Technology, Cambridge, MA April 17, 2008 Avogadro Scale Computing / 1 Avogadro number s? Intel
More informationplasmonic nanoblock pair
Nanostructured potential of optical trapping using a plasmonic nanoblock pair Yoshito Tanaka, Shogo Kaneda and Keiji Sasaki* Research Institute for Electronic Science, Hokkaido University, Sapporo 1-2,
More informationSUPPLEMENTARY INFORMATION
Vertical nanowire electrode arrays as a scalable platform for intracellular interfacing to neuronal circuits Jacob T. Robinson, 1* Marsela Jorgolli, 2* Alex K. Shalek, 1 Myung-Han Yoon, 1 Rona S. Gertner,
More informationSemiconductor Physics and Devices
Nonideal Effect The experimental characteristics of MOSFETs deviate to some degree from the ideal relations that have been theoretically derived. Semiconductor Physics and Devices Chapter 11. MOSFET: Additional
More informationIan JasperAgulo 1,LeonidKuzmin 1,MichaelFominsky 1,2 and Michael Tarasov 1,2
INSTITUTE OF PHYSICS PUBLISHING Nanotechnology 15 (4) S224 S228 NANOTECHNOLOGY PII: S0957-4484(04)70063-X Effective electron microrefrigeration by superconductor insulator normal metal tunnel junctions
More informationSupporting Information
Supporting Information Resistive Switching Memory Effects of NiO Nanowire/Metal Junctions Keisuke Oka 1, Takeshi Yanagida 1,2 *, Kazuki Nagashima 1, Tomoji Kawai 1,3 *, Jin-Soo Kim 3 and Bae Ho Park 3
More informationStudy of As 50 Se 50 thin film dissolution kinetics in amine based solutions
Available online at www.sciencedirect.com Physics Procedia 44 (2013 ) 114 119 10 th International Conference on Solid State Chemistry, Pardubice, Czech Republic Study of As 50 Se 50 thin film dissolution
More informationCurrent Optics Research at the ElectroOptics Research Institute & Nanotechnology Center
Current Optics Research at the ElectroOptics Research Institute & Nanotechnology Center Robert W. Cohn, Director ElectroOptics Research Institute & Nanotechnology Center University of Louisville ElectroOptics
More informationIN-PLANE THERMAL CONDUCTIVITY MEASUREMENT ON NANOSCALE CONDUCTIVE MATERIALS WITH ON-SUBSTRATE DEVICE CONFIGURATION
IN-PLANE THERMAL CONDUCTIVITY MEASUREMENT ON NANOSCALE CONDUCTIVE MATERIALS WITH ON-SUBSTRATE DEVICE CONFIGURATION Takashi Kodama, Woosung Park, Amy Marconnet, Jaehoo Lee, Mehdi Asheghi, Kenneth E. Goodson
More informationSupplementary Information
Supplementary Information For Nearly Lattice Matched All Wurtzite CdSe/ZnTe Type II Core-Shell Nanowires with Epitaxial Interfaces for Photovoltaics Kai Wang, Satish C. Rai,Jason Marmon, Jiajun Chen, Kun
More informationNon-Volatile Memory Based on Solid Electrolytes
Non-Volatile Memory Based on Solid Electrolytes Michael Kozicki Chakku Gopalan Murali Balakrishnan Mira Park Maria Mitkova Center for Solid State Electronics Research Introduction The electrochemical redistribution
More informationSupplementary Figure 1 Reflective and refractive behaviors of light with normal
Supplementary Figures Supplementary Figure 1 Reflective and refractive behaviors of light with normal incidence in a three layer system. E 1 and E r are the complex amplitudes of the incident wave and
More informationSi/Cu 2 O Nanowires Heterojunction as Effective Position-Sensitive Platform
American Journal of Optics and Photonics 2017; 5(1): 6-10 http://www.sciencepublishinggroup.com/j/ajop doi: 10.11648/j.ajop.20170501.12 ISSN: 2330-8486 (Print); ISSN: 2330-8494 (Online) Si/Cu 2 O Nanowires
More informationSupplementary Figure 1 Schematic illustration of fabrication procedure of MoS2/h- BN/graphene heterostructures. a, c d Supplementary Figure 2
Supplementary Figure 1 Schematic illustration of fabrication procedure of MoS 2 /hon a 300- BN/graphene heterostructures. a, CVD-grown b, Graphene was patterned into graphene strips by oxygen monolayer
More informationFeature-level Compensation & Control
Feature-level Compensation & Control 2 Sensors and Control Nathan Cheung, Kameshwar Poolla, Costas Spanos Workshop 11/19/2003 3 Metrology, Control, and Integration Nathan Cheung, UCB SOI Wafers Multi wavelength
More informationMICROSTRUCTURING OF METALLIC LAYERS FOR SENSOR APPLICATIONS
MICROSTRUCTURING OF METALLIC LAYERS FOR SENSOR APPLICATIONS Vladimír KOLAŘÍK, Stanislav KRÁTKÝ, Michal URBÁNEK, Milan MATĚJKA, Jana CHLUMSKÁ, Miroslav HORÁČEK, Institute of Scientific Instruments of the
More informationDual Vivaldi UWB nanoantenna for optical applications
Dual Vivaldi UWB nanoantenna for optical applications Zeev Iluz, Yuval Yifat, Doron Bar-Lev, Michal Eitan, Yoni Kantarovsky, Yuav Blue, Yael Hanein, Koby Scheuer, and Amir Boag School of Electrical Engineering
More informationSection 2.3 Bipolar junction transistors - BJTs
Section 2.3 Bipolar junction transistors - BJTs Single junction devices, such as p-n and Schottkty diodes can be used to obtain rectifying I-V characteristics, and to form electronic switching circuits
More informationUnit Test Strand: The Wave Nature of Light
22K 11T 2A 3C Unit Test Strand: The Wave Nature of Light Expectations: E1. analyse technologies that use the wave nature of light, and assess their impact on society and the environment; E2. investigate,
More informationSuperconducting Nanowire Single Photon Detector (SNSPD) integrated with optical circuits
Superconducting Nanowire Single Photon Detector (SNSPD) integrated with optical circuits Marcello Graziosi, ESR 3 within PICQUE (Marie Curie ITN project) and PhD student marcello.graziosi@ifn.cnr.it Istituto
More informationECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices
ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices Christopher Batten School of Electrical and Computer Engineering Cornell University http://www.csl.cornell.edu/courses/ece5950 Simple Transistor
More informationLecture 22 Optical MEMS (4)
EEL6935 Advanced MEMS (Spring 2005) Instructor: Dr. Huikai Xie Lecture 22 Optical MEMS (4) Agenda: Refractive Optical Elements Microlenses GRIN Lenses Microprisms Reference: S. Sinzinger and J. Jahns,
More informationSemiconductor Nanowires for Thermoelectrics Daniel Vakulov, R. Chavez, S. Gazibegović, R.W. van der Heijden, and E.P.A.M. Bakkers
Semiconductor Nanowires for Thermoelectrics Daniel Vakulov, R. Chavez, S. Gazibegović, R.W. van der Heijden, and E.P.A.M. Bakkers Advanced Nanomaterials and Devices / Applied Physics department Outline
More informationЗдра вствуйте, това рищи!
Manufacturing of Smart Objects by Printing Technologies Здра вствуйте, това рищи! Moscow / RUS, June 05, 2013 Reinhard R. Baumann Chemnitz University of Technology Chair of Digital Printing Fraunhofer
More informationSupplementary Materials for
advances.sciencemag.org/cgi/content/full/2/7/e1629/dc1 Supplementary Materials for Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films Xuewen Wang, Xuexia He, Hongfei Zhu,
More informationREPORT DOCUMENTATION PAGE
REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188 Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions,
More informationCharacterization of SOI MOSFETs by means of charge-pumping
Paper Characterization of SOI MOSFETs by means of charge-pumping Grzegorz Głuszko, Sławomir Szostak, Heinrich Gottlob, Max Lemme, and Lidia Łukasiak Abstract This paper presents the results of charge-pumping
More informationNAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
More informationSpectrally Selective Photocapacitance Modulation in Plasmonic Nanochannels for Infrared Imaging
Supporting Information Spectrally Selective Photocapacitance Modulation in Plasmonic Nanochannels for Infrared Imaging Ya-Lun Ho, Li-Chung Huang, and Jean-Jacques Delaunay* Department of Mechanical Engineering,
More informationOn-chip interrogation of a silicon-on-insulator microring resonator based ethanol vapor sensor with an arrayed waveguide grating (AWG) spectrometer
On-chip interrogation of a silicon-on-insulator microring resonator based ethanol vapor sensor with an arrayed waveguide grating (AWG) spectrometer Nebiyu A. Yebo* a, Wim Bogaerts, Zeger Hens b,roel Baets
More informationConductance switching in Ag 2 S devices fabricated by sulphurization
3 Conductance switching in Ag S devices fabricated by sulphurization The electrical characterization and switching properties of the α-ag S thin films fabricated by sulfurization are presented in this
More informationEE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
More informationRaman Spectroscopy and Transmission Electron Microscopy of Si x Ge 1-x -Ge-Si Core-Double-Shell Nanowires
Raman Spectroscopy and Transmission Electron Microscopy of Si x Ge 1-x -Ge-Si Core-Double-Shell Nanowires Paola Perez Mentor: Feng Wen PI: Emanuel Tutuc Background One-dimensional semiconducting nanowires
More informationEnergy beam processing and the drive for ultra precision manufacturing
Energy beam processing and the drive for ultra precision manufacturing An Exploration of Future Manufacturing Technologies in Response to the Increasing Demands and Complexity of Next Generation Smart
More informationDEVICE APPLICATION OF NON-EQUILIBRIUM MOS CAPACITORS FABRICATED ON HIGH RESISTIVITY SILICON
INTERNATIONAL JOURNAL ON SMART SENSING AND INTELLIGENT SYSTEMS, VOL. 4, NO. 4, DECEMBER 2011 DEVICE APPLICATION OF NON-EQUILIBRIUM MOS CAPACITORS FABRICATED ON HIGH RESISTIVITY SILICON O. Malik, F. J.
More informationNanovie. Scanning Tunnelling Microscope
Nanovie Scanning Tunnelling Microscope Nanovie STM Always at Hand Nanovie STM Lepto for Research Nanovie STM Educa for Education Nanovie Auto Tip Maker Nanovie STM Lepto Portable 3D nanoscale microscope
More informationHigh resolution measurements The differential approach
Electrical characterisation of nanoscale samples & biochemical interfaces: methods and electronic instrumentation High resolution measurements The differential approach Giorgio Ferrari Dipartimento di
More informationLaser printing for micro and nanomanufacturing
Laser printing for micro and nanomanufacturing Ph. Delaporte Lasers, Plasmas and Photonics Processes Laboratory, CNRS, Aix-Marseille University Marseille, France Contact: Philippe Delaporte delaporte@lp3.univ-mrs.fr
More informationElectric polarization properties of single bacteria measured with electrostatic force microscopy
Electric polarization properties of single bacteria measured with electrostatic force microscopy Theoretical and practical studies of Dielectric constant of single bacteria and smaller elements Daniel
More informationSimulation of technologically relevant SPR devices
Simulation of technologically relevant SPR devices Author: Judith Costa Iracheta Advisor: Mauricio Moreno Sereno Facultat de Física, Universitat de Barcelona, Diagonal 645, 08028 Barcelona, Spain*. Abstract:
More informationVertical Surround-Gate Field-Effect Transistor
Chapter 6 Vertical Surround-Gate Field-Effect Transistor The first step towards a technical realization of a nanowire logic element is the design and manufacturing of a nanowire transistor. In this respect,
More informationCoating of Si Nanowire Array by Flexible Polymer
, pp.422-426 http://dx.doi.org/10.14257/astl.2016.139.84 Coating of Si Nanowire Array by Flexible Polymer Hee- Jo An 1, Seung-jin Lee 2, Taek-soo Ji 3* 1,2.3 Department of Electronics and Computer Engineering,
More informationSupplementary Information. The origin of discrete current fluctuations in a fresh single molecule junction
Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2014 Supplementary Information The origin of discrete current fluctuations in a fresh single molecule
More informationE LECTROOPTICAL(EO)modulatorsarekeydevicesinoptical
286 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 26, NO. 2, JANUARY 15, 2008 Design and Fabrication of Sidewalls-Extended Electrode Configuration for Ridged Lithium Niobate Electrooptical Modulator Yi-Kuei Wu,
More informationSupporting Information. Single-Nanowire Electrochemical Probe Detection for Internally Optimized Mechanism of
Supporting Information Single-Nanowire Electrochemical Probe Detection for Internally Optimized Mechanism of Porous Graphene in Electrochemical Devices Ping Hu, Mengyu Yan, Xuanpeng Wang, Chunhua Han,*
More informationFundamentals of CMOS Image Sensors
CHAPTER 2 Fundamentals of CMOS Image Sensors Mixed-Signal IC Design for Image Sensor 2-1 Outline Photoelectric Effect Photodetectors CMOS Image Sensor(CIS) Array Architecture CIS Peripherals Design Considerations
More information- Near Field Scanning Optical Microscopy - Electrostatic Force Microscopy - Magnetic Force Microscopy
- Near Field Scanning Optical Microscopy - Electrostatic Force Microscopy - Magnetic Force Microscopy Yongho Seo Near-field Photonics Group Leader Wonho Jhe Director School of Physics and Center for Near-field
More informationSolid State Device Fundamentals
Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)
More informationDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77. Table of Contents 1
Efficient single photon detection from 500 nm to 5 μm wavelength: Supporting Information F. Marsili 1, F. Bellei 1, F. Najafi 1, A. E. Dane 1, E. A. Dauler 2, R. J. Molnar 2, K. K. Berggren 1* 1 Department
More informationNanoelectronics: Devices and Materials. Prof. K. N. Bhat Centre for Nano Science and Engineering Indian Institute of Science, Bangalore
Nanoelectronics: Devices and Materials. Prof. K. N. Bhat Centre for Nano Science and Engineering Indian Institute of Science, Bangalore Lecture 20 SOI MOSFET structures, Partially Depleted (PD) and Fully
More informationSchottky barrier based silicon nanowire ph sensor with live sensitivity control
Nano Research Nano Res 1 DOI 10.1007/s12274 013 0393 8 Schottky barrier based silicon nanowire ph sensor with live sensitivity control Felix M. Zörgiebel, Sebastian Pregl, Lotta Römhildt, Jörg Opitz, W.
More informationSUPPLEMENTARY INFORMATION
In the format provided by the authors and unedited. Photon-triggered nanowire transistors Jungkil Kim, Hoo-Cheol Lee, Kyoung-Ho Kim, Min-Soo Hwang, Jin-Sung Park, Jung Min Lee, Jae-Pil So, Jae-Hyuck Choi,
More informationLife under low Reynolds numbers How do microorganisms swim?
Manipulation of Nanoentities in Suspension C. L. Chien Johns Hopkins University Outline Introduction Low Reynolds number regime AC electric field and DEP force Manipulation, Patterning, and Rotation of
More informationNanoscale Systems for Opto-Electronics
Nanoscale Systems for Opto-Electronics 675 PL intensity [arb. units] 700 Wavelength [nm] 650 625 600 5µm 1.80 1.85 1.90 1.95 Energy [ev] 2.00 2.05 1 Nanoscale Systems for Opto-Electronics Lecture 5 Interaction
More informationAdvancing Consumer Packaging Through Printable Electronics
IPST Executive Conference, Atlanta, GA March 9-10, 2011 Advancing Consumer Packaging Through Printable Electronics Bernard Kippelen Professor, School of Electrical and Computer Engineering Director, Center
More informationFabrication of Crystalline Semiconductor Nanowires by Vapor-liquid-solid Glancing Angle Deposition (VLS- GLAD) Technique.
Fabrication of Crystalline Semiconductor Nanowires by Vapor-liquid-solid Glancing Angle Deposition (VLS- GLAD) Technique. Journal: 2011 MRS Spring Meeting Manuscript ID: 1017059 Manuscript Type: Symposium
More informationLong-distance propagation of short-wavelength spin waves. Liu et al.
Long-distance propagation of short-wavelength spin waves Liu et al. Supplementary Note 1. Characterization of the YIG thin film Supplementary fig. 1 shows the characterization of the 20-nm-thick YIG film
More informationSelective improvement of NO 2 gas sensing behavior in. SnO 2 nanowires by ion-beam irradiation. Supporting Information.
Supporting Information Selective improvement of NO 2 gas sensing behavior in SnO 2 nanowires by ion-beam irradiation Yong Jung Kwon 1, Sung Yong Kang 1, Ping Wu 2, *, Yuan Peng 2, Sang Sub Kim 3, *, Hyoun
More informationSupplementary Figure S1 X-ray diffraction pattern of the Ag nanowires shown in Fig. 1a dispersed in their original solution. The wavelength of the
Supplementary Figure S1 X-ray diffraction pattern of the Ag nanowires shown in Fig. 1a dispersed in their original solution. The wavelength of the x-ray beam was 0.1771 Å. The saturated broad peak and
More informationLaboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, 1015
Gallium arsenide p-i-n radial structures for photovoltaic applications C. Colombo 1 *, M. Heiβ 1 *, M. Grätzel 2, A. Fontcuberta i Morral 1 1 Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique
More informationAdvanced PDK and Technologies accessible through ASCENT
Advanced PDK and Technologies accessible through ASCENT MOS-AK Dresden, Sept. 3, 2018 L. Perniola*, O. Rozeau*, O. Faynot*, T. Poiroux*, P. Roseingrave^ olivier.faynot@cea.fr *Cea-Leti, Grenoble France;
More informationMajor Fabrication Steps in MOS Process Flow
Major Fabrication Steps in MOS Process Flow UV light Mask oxygen Silicon dioxide photoresist exposed photoresist oxide Silicon substrate Oxidation (Field oxide) Photoresist Coating Mask-Wafer Alignment
More informationDesign, synthesis and characterization of novel nanowire structures. for photovoltaics and intracellular probes
Design, synthesis and characterization of novel nanowire structures for photovoltaics and intracellular probes Bozhi TIAN Department of Chemistry and Chemical Biology, Semiconductor nanowires (NW) represent
More informationFormation of Metal-Semiconductor Axial Nanowire Heterostructures through Controlled Silicidation
Formation of Metal-Semiconductor Axial Nanowire Heterostructures through Controlled Silicidation Undergraduate Researcher Phillip T. Barton Faculty Mentor Lincoln J. Lauhon Department of Materials Science
More informationReconfigurable Si-Nanowire Devices
Reconfigurable Si-Nanowire Devices André Heinzig, Walter M. Weber, Dominik Martin, Jens Trommer, Markus König and Thomas Mikolajick andre.heinzig@namlab.com log I d Present CMOS technology ~ 88 % of IC
More informationMonolithically Integrated Thin-Film/Si Tandem Photoelectrodes
Monolithically Integrated Thin-Film/Si Tandem Photoelectrodes Author Name: Zetian Mi Date: November 14, 2017 Venue: NREL s Energy Systems Integration Facility HydroGEN Kick-Off Meeting MONOLITHICALLY INTEGRATED
More informationThe Series RLC Circuit and Resonance
Purpose Theory The Series RLC Circuit and Resonance a. To study the behavior of a series RLC circuit in an AC current. b. To measure the values of the L and C using the impedance method. c. To study the
More informationDTU DANCHIP an open access micro/nanofabrication facility bridging academic research and small scale production
DTU DANCHIP an open access micro/nanofabrication facility bridging academic research and small scale production DTU Danchip National Center for Micro- and Nanofabrication DTU Danchip DTU Danchip is Denmark
More informationSupporting Information. Vertical Graphene-Base Hot-Electron Transistor
Supporting Information Vertical Graphene-Base Hot-Electron Transistor Caifu Zeng, Emil B. Song, Minsheng Wang, Sejoon Lee, Carlos M. Torres Jr., Jianshi Tang, Bruce H. Weiller, and Kang L. Wang Department
More informationOutline. 1 Introduction. 2 Basic IC fabrication processes. 3 Fabrication techniques for MEMS. 4 Applications. 5 Mechanics issues on MEMS MDL NTHU
Outline 1 Introduction 2 Basic IC fabrication processes 3 Fabrication techniques for MEMS 4 Applications 5 Mechanics issues on MEMS 2.2 Lithography Reading: Runyan Chap. 5, or 莊達人 Chap. 7, or Wolf and
More informationFigure 7 Dynamic range expansion of Shack- Hartmann sensor using a spatial-light modulator
Figure 4 Advantage of having smaller focal spot on CCD with super-fine pixels: Larger focal point compromises the sensitivity, spatial resolution, and accuracy. Figure 1 Typical microlens array for Shack-Hartmann
More information