HT82V806 CCD 6 Channel Vertical Driver
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- Jonas Merritt
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1 CCD 6 Channel Vertical Driver Features Operating voltage: 3.0V~5.5V Built-in seven circuits 2-level output: 2 circuits for vertical CCD clock driver Output voltage level (typ.) = 9V to 0V 3-level output: 4 circuits for vertical CCD clock driver Output voltage level (typ.) = 9V to 15V 2-level output: 1 circuit for shutter driver Output voltage level (typ.) = 9V to 17V Switchable between NTSC (EIA) and PAL (CCIR) modes 24-pin SSOP (150mil) package General Description HT82V806 is a CMOS vertical clock driver and shutter driver IC for CCD area sensors. It has the capability of converting the voltage and impedance from the CMOS level. Block Diagram 2., 8 * 8 8., 0 8 0! * :., : 8 8 : 8 " 8 : 8! * 8! ) 8 * 8 ) 8 ) ) : 8! : 8,, ! ) : 8 " : 8 0 * : Rev February 8, 2006
2 Pin Assignment 2., 8 * " 8! * 8! ) 8 * 8 ) 8 ) 8 0! " # $ % & ' "! ' & % $ # "! 8., 0 8 0! * :., : 8 : 8 : 8 0 ) : 8! : 8,, ! ) : 8 " : 8 0 * : 0 6 & 8 & $ " ) # E Pin Description Pin No. Pin Name I/O Description 1 POFD O Electronic shutter pulse output (High level=v OFDH, low level=v L ) 2 VMB Power supply for high level V2 and V4 3 VL Power supply for all low level output pulses 4 V2 O Pulse to drive vertical CCD shift register; Connect to V2 5 V4 O Pulse to drive vertical CCD shift register; Connect to V4 6 NC No connection 7 V3B O Pulse to drive vertical CCD shift register; Connect to V3B 8 V3A O Pulse to drive vertical CCD shift register; Connect to V3A 9 V1B O Pulse to drive vertical CCD shift register; Connect to V1B 10 V1A O Pulse to drive vertical CCD shift register; Connect to V1A 11 VMA Power supply for intermediate level V1A, V1B, V3A and V3B 12 VH Power supply for high level V1A, V1B, V3A and V3B 13 VHIBX I Pulse that transfers the charge of the photo-diode to the vertical shift register. 14 V4X I Vertical transfer pulse input 15 VH3AX I Pulse that transfers the charge of the photo-diode to the vertical shift register. 16 VSS Negative power supply, ground 17 VDD Positive power supply 18 V3X I Vertical transfer pulse input 19 VH1AX I Pulse that transfers the charge of the photo-diode to the vertical shift register. 20 V1X I Vertical transfer pulse input 21 V2X I Vertical transfer pulse input 22 OFDX I Electronic shutter pulse input 23 VH3BX I Pulse that transfers the charge of the photo-diode to the vertical shift register. 24 VOFDH Power supply for high level POFD Rev February 8, 2006
3 Absolute Maximum Ratings Supply Voltage...GND0.3V to GND6V Input Voltage...V SS 0. 3V to V DD 34V Storage Temperature...55C to150c Operating Temperature...25C to70c Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Recommended Operating Conditions Symbol Parameter Min. Typ. Max. Unit V DD V H 15 V L Supply Voltage 9 V MA,V MB 0 V V OFDH 17 V IN (LOW) 0 0.3V DD Input Voltage V IN (HIGH) 0.7V DD V DD V NTSC Operating Frequency khz PAL T OPR Operating Temperature C D.C. Characteristics V H =15V, V L =9V, V MA =0V, V MB =0V, V OFDH =15V, Ta=25C Test Conditions Symbol Parameter V DD Conditions Min. Typ. Max. Unit V IL Input Low Voltage 3.3V 0 0.3V DD V V IH Input High Voltage 3.3V 0.7V DD V DD V V IL1 Input Low Current 3.3V V IL =0V 200 A V IH1 Input High Current 3.3V V IH =3.3V 1 A V OL Output Low Voltage 3.3V I OL <1A 8.9 V V OMLa I OMLa <1A 0.1 V V OMHa I OMHa <1A 0.1 V Output Intermediate Voltage 3.3V V OMLb I OMLb <1A 0.1 V V OMHb I OMHb <1A 0.1 V R ONH I OH =20mA 30 R ONOFH I OFDH =20mA 20 R ONM Output ON Resistance 3.3V I OM =20mA 25 R ONL I OL =20mA 20 I DD 2.0 A I H 200 A I OFDH Static Current 3.3V 200 A I M 200 A I L 200 A Rev February 8, 2006
4 A.C. Characteristics V H =15V, V L =9V, V MA =0V, V MB =0V, V OFDH =15V, Ta=25C Symbol Parameter V DD Test Conditions Conditions Min. Typ. Max. Unit t TRM (V L V M ) t TFL (V M V L ) 3.3V V IN to V M (V 1A,V 1B,V 2,V 3A,V 3B,V 4 ) 3.3V V IN to V L (V 1A,V 1B,V 2,V 3A,V 3B,V 4 ) ns ns t TRH (V M V H ) t TFM (V H V M ) t TROFDH (V L V OFDH ) t TFOFDL (V OFDH V L ) Sequential Delay 3.3V V IN to V H (V 1A,V 1B,V 3A,V 3B ) ns 3.3V V IN to V M (V 1A,V 1B,V 3A,V 3B ) ns 3.3V V IN to V OFDH (POFD) ns 3.3V V IN to V L (POFD) ns Timing Diagrams 8 : 8 : 8! : 8" : 8,,!! 8 /, ) : 8 0 * : 8 0! ) : 8 0! * : 8,,!! 8 /, 8 J6 4 0 J # 8 J6 4 8 ) 8 * 8! ) 8! * 8 ) 8 J6. 8 ' 8 8 * 8 8 8" 8 ' 8., : 8,,!! 8 /, 8 8., 0 # 8 J6 4., 0 J6.., 2., 8 ' 8 Rev February 8, 2006
5 Application Circuits Equivalent Circuits While V 1A and V 3A (or V 1B and V 3B ) are measured, V 1B and V 3B (or V 1A and V 3A ) are open. 8 ) H 8* "! "!! " 4 " 4! 8 " 2., 8! ) H! 8* 5 7 * 5 7 * # F. 4 / 4 J " 4 %9 4 / 9# J "!! F.!! " " # F. Rev February 8, 2006
6 Package Information 24-pin SSOP (150mil) Outline Dimensions "! ) *, / 0 -. = Symbol Dimensions in mil Min. Nom. Max. A B C 8 12 C D E 25 F 4 10 G H Rev February 8, 2006
7 Product Tape and Reel Specifications Reel Dimensions 6, ) * 6 SSOP 24N (150mil) Symbol Description Dimensions in mm A Reel Outer Diameter B Reel Inner Diameter C Spindle Hole Diameter D Key Slit Width T1 Space Between Flange T2 Reel Thickness Rev February 8, 2006
8 Carrier Tape Dimensions, 2 2 J -. 9 *, 2 ) SSOP 24N (150mil) Symbol Description Dimensions in mm W Carrier Tape Width P Cavity Pitch E Perforation Position F Cavity to Perforation (Width Direction) D Perforation Diameter D1 Cavity Hole Diameter P0 Perforation Pitch P1 Cavity to Perforation (Length Direction) A0 Cavity Length B0 Cavity Width K0 Cavity Depth t Carrier Tape Thickness C Cover Tape Width 13.3 Rev February 8, 2006
9 Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: Fax: Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: Fax: Fax: (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China Tel: Fax: Holtek Semiconductor Inc. (Shenzhen Sales Office) 5/F, Unit A, Productivity Building, Cross of Science M 3rd Road and Gaoxin M 2nd Road, Science Park, Nanshan District, Shenzhen, China Tel: , Fax: Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China Tel: , , Fax: Holtek Semiconductor Inc. (Chengdu Sales Office) 709, Building 3, Champagne Plaza, No.97 Dongda Street, Chengdu, Sichuan, China Tel: Fax: Holmate Semiconductor, Inc. (North America Sales Office) Fremont Blvd., Fremont, CA Tel: Fax: Copyright 2006 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holteks products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at Rev February 8, 2006
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