Analysis of Substrate Integrated Waveguide (SIW) Resonator and Design of Miniaturized SIW Bandpass Filter

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1 3 INTL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS, 017, VOL. 63, NO. 3, PP Manuscript received June 4, 016; revised June, 017. DOI: /eletel Analysis o Substrate Integrated Waveguide (SIW) Resonator and Design o Miniaturized SIW Bandpass Filter Ahmed Rhbanou, Seddik Bri, and Mohamed Sabbane Abstract In this paper, the substrate integrated waveguide (SIW) resonator is designed to study the inluence o dielectric materials on its operating parameters (insertion loss, ractional bandwidth and unloaded Q-actor). The results obtained show that the use o high permittivity substrate in the SIW resonator by increasing its thickness allows reducing the size o resonator by causing the increase in its unloaded Q-actor. A SIW bandpass ilter is designed using low temperature co-ired ceramic (LTCC) technology and high permittivity substrate. The ilter has a ractional bandwidth o 7 % centered at 14.3 GHz with insertion loss o 0.7 db. length (L SIW) and the width (W SIW). Thus, the propagation properties in the SIW cavity is very similar in a rectangular waveguide cavity illed with the same dielectric (ε r) with width (W e) and length (L e) as shown in Fig. 1. Keywords substrate integrated waveguide, dielectric materials, cavity resonator, band-pass ilter, low temperature coired ceramic M I. INTRODUCTION ICROWAVE ilters are widely used in the wireless communication systems, especially communication satellites. Rectangular waveguide ilters are characterized by the high Q-actor and the low losses. However, their abrications are very expensive and their interactions with planar structures are very diicult. In order to overcome these problems, a new technology has been proposed in the realization o the millimeter-wave ilters, called the substrate integrated waveguide (SIW). The SIW is composed o two solid conductor planes separated by a dielectric substrate with two arrays o via holes in the both side walls. The SIW ilters take the advantages o easy integration, high Q-actor, low cost and low losses [1]. On the other, LTCC (Low Temperature Coired Ceramic) is a multilayer ceramic technology which allows producing multilayer hybrid integrated circuits. This technology is extremely useul or RF and microwave applications, due to its merits o low material costs and good thermal conductivity []. In this paper, the SIW resonator is analyzed to study the inluence o dielectric materials. A SIW bandpass ilter is designed using LTCC technology and high permittivity substrate. The structures are designed and simulated by using Ansot HFSS. II. DESIGN OF SIW CAVITY The essential parameters o the SIW cavity are the distance between the holes (P), the diameter o the metallic via (D), the A. Rhbanou and M. Sabbane are with Department o Mathematics, FSM, Moulay Ismail University, Meknes, 50000, Morocco ( s: rhbanou@gmail.com; m.sabbane@umi.ac.ma). S. Bri is with Material and Instrumentations group (MIN), Electrical Engineering Department, ESTM, Moulay Ismail University, Meknes, 50000, Morocco ( briseddik@gmail.com). Fig. 1. (a) SIW cavity, (b) conventional rectangular waveguide cavity. The width and the length o the SIW cavity are determined rom Eqs. (1), () and (3), with P < 4 D and P < λ 0 (ε r/) 1/ and λ 0 is the space wavelength [3]-[11]. W L e e D W (1) SIW 0.95P D L () SIW 0.95P ( ) c m p m0 p r W e Le TE r The unloaded Q-actor is deined as [1], [13]: Q 1 1 Qd Qc where Q c depends only on the ohmic losses in the waveguide walls and is given by (5) [13]. Q c 1 3 ( KW L ) ( W ) ( ) ( ) ( ) e Le W e W Le e e h R h h L S e e and Q d depends only on losses in the dielectric and is given by (6) [13]. With: R Q d (3) (4) (5) 1 (6) tan ( ) r 101 r ; ; K (7) S r TE c

2 56 A. RHBANOU, S. BRI, M. SABBANE where K is the wave number in the resonator, tanδ is the loss tangent o the dielectric, R s is the surace resistance o the cavity ground planes and η is the intrinsic impedance. From these expressions, Figure shows the evolution o unloaded Q-actor o the square waveguide cavity illed with dielectric (W e = L e) resonating at 9.13 GHz in the TE 101 mode as a unction o its thickness by varying its dielectric material. The silver metal walls (σ = S/m) are used or the metallization. As illustrated in Table I, the use o high permittivity substrate in the SIW resonator allows reducing the size o resonator. The evolution the ractional bandwidth, the insertion loss and the unloaded Q-actor o the SIW resonator resonating at 9.13 GHz in the TE 101 mode as a unction o its thickness by varying its dielectric material are shown in Fig. 4. Fig.. Evolution o unloaded Q-actor o the square waveguide cavity illed with dielectric (W e = L e) resonating at 9.13 GHz in the TE 101 mode as a unction o its thickness by varying its dielectric material. Figure shows that the increase o the thickness o each dielectric material used in square waveguide cavity illed with dielectric (W e = L e) resonating at 9.13 GHz in the TE 101 mode has caused an increase the unloaded Q-actor o cavity. Thus, the use o substrates with low dielectric loss allows obtaining very interesting results or high requency applications. III. ANALYSIS OF SIW RESONATOR The TE 101-mode-based SIW resonator is presented by a square SIW cavity (W SIW = L SIW) and tapered transitions with D = 0.15 mm and P = mm. Figure 3 shows geometry parameters o SIW resonator. Fig. 3. Square SIW cavity with tapered transitions. The SIW resonator resonating at 9.13 GHz in the TE 101 mode is simulated by varying its dielectric material and its thickness, to provide estimates o its ractional bandwidth, its insertion loss and its unloaded Q-actor. The physical parameters o SIW resonator or several dielectric materials as a unction o its thickness are shown in Table I. Fig. 4. (a) Evolution the ractional bandwidth o the SIW resonator resonating at 9.13 GHz in the TE 101 mode as a unction o its thickness by varying its dielectric material, (b) evolution the insertion loss o the SIW resonator resonating at 9.13 GHz in the TE 101 mode as a unction o its thickness by varying its dielectric material, (c) evolution the unloaded Q-actor o the SIW resonator resonating at 9.13 GHz in the TE 101 mode as a unction o its thickness by varying its dielectric material.

3 ANALYSIS OF SUBSTRATE INTEGRATED WAVEGUIDE (SIW) RESONATOR AND DESIGN OF MINIATURIZED SIW BANDPASS FILTER 57 Dielectric materials Neltec NY908(IM) ε r=.08 tanδ= Duroid ε r=. tanδ= Rogers RO3003 ε r=3 tanδ= Ferro-A6 ε r=5.6 tanδ= Dupont 943 ε r=7.4 tanδ=0.001 Heratape CT765 ε r=68.7 tanδ= TABLE I PHYSICAL DIMENSIONS OF SIW RESONATOR FOR DIFFERENT DIELECTRIC MATERIALS AS A FUNCTION OF ITS THICKNESS Thickness o the SIW resonator (mm) W SIW =L SIW (mm) L T (mm) W T (mm) WM (mm) As illustrated in Fig. 4, the increase o the thickness o each dielectric material used in the SIW resonator has caused an increase the unloaded Q-actor and the reduction the ractional bandwidth o resonator. Thus, the use o a dielectric material that has a high permittivity in the SIW resonator has caused an increasing the insertion losses o resonator. IV. FILTER DESIGN AND ANALYSIS A second-order bandpass ilter is designed to meet the ollowing speciications, a center requency is 0 = 14.3 GHz and a ractional bandwidth is FBW = 7 %. The return loss is better than 0 db and the rejection 10 db or requencies 7 GHz. The coupling routing diagram o the proposed ilter is shown in Fig. 5, where each line shows a direct coupling and each node represents a resonator. Applying the classical Chebyshev synthesis, the element values o the lowpass prototype ilter are g 0 = 1, g 1 = , g = , g 3 = [14]. The external quality actors o the ilter at the input (Q ein) and output (Q eout) can be synthesized by ormula (8) shown as ollows [14]. Fig. 5. Coupling and routing diagram o the proposed second-order bandpass ilter. Q Q gg 1.66 (8) 0 1 ein eout FBW The coupling coeicient (M 1,) is given by (9) [14]: M 1, FBW 0.63 (9) gg 1 The coupling matrix [M] o the proposed ilter is given by ormula (10).

4 58 A. RHBANOU, S. BRI, M. SABBANE M (10) The ilter is composed o two SIW resonators. Figure 6 shows the top view o the proposed ilter. The iris is used to orm the inter-resonator coupling structure (M 1,), the input and output are coupled through coplanar waveguide (CPW). Fig. 6. Top view o the proposed second-order SIW bandpass ilter. The substrate o the ilter is made o six mm thick layers o Heratape CT765 (ε r =68.7 and tanδ = ). The resonant requency o TE 101 mode in each cavity o ilter is about 14.3 GHz. The external quality actor (Q e) or resonator 1 and is calculated by using the model shown in Fig. 7, a SIW cavity with a circular hole etched on top metal layer and a coplanar waveguide (CPW) with the ollowing conditions: W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, L M = 0.78 mm, W M = 0.68 mm, R = 0.97 mm, L 1 = 3.6 mm, W = 3.4 mm, n = 0.1 mm, a = 1.3 mm, b = 0.35 mm and slot height = 0. mm. Fig. 8. External quality actor (Q e) evaluated as a unction o slot length o CPW, where W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, L M = 0.78 mm, W M = 0.68 mm, R = 0.97 mm, L 1 = 3.6 mm, W = 3.4 mm, n = 0.1 mm, a = 1.3 mm, b = 0.35 mm and slot height = 0. mm. As illustrated in Fig. 8, when the slot length o CPW increases the external quality actor (Q e) is decreasing. Thus, as required or the ilter speciication, Q e = 1.66 is obtained at slot length o CPW = 1.05 mm. The coupling between the two SIW resonators is perormed by an iris opening. This structure is shown in Fig. 9, with the ollowing conditions: W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, R = 0.97 mm, L = 6.4 mm, W = 3.4 mm, a = 1.3 mm and b = 0.35 mm. Fig. 7. Geometry o the proposed model to calculate the external quality actor (Q e) or resonator 1 and, where W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, L M = 0.78 mm, W M = 0.68 mm, R = 0.97 mm, L 1 = 3.6 mm, W = 3.4 mm, n = 0.1 mm, a = 1.3 mm, b = 0.35 mm and slot height = 0. mm. The external quality actor (Q e) is controlled by changing the slot length o the conventional coplanar waveguide (CPW). Q e is obtained rom the simulation by using this ormula [15]: 0 Q (11) e Where 0 is the resonant requency o the resonator (SIW resonator 1 or ) and Δ is the 3-dB bandwidth centre at the resonant requency. Figure 8 shows the evolution o the external quality actor (Q e) as a unction o slot length o CPW, where W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, L M = 0.78 mm, W M = 0.68 mm, R = 0.97 mm, L 1 = 3.6 mm, W = 3.4 mm, n = 0.1 mm, a = 1.3 mm, b = 0.35 mm and slot height = 0. mm, obtained using Ansot HFSS. Fig. 9. Geometrical parameters o the coupling between the two SIW resonators, where W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, R = 0.97 mm, L = 6.4 mm, W = 3.4 mm, a = 1.3 mm and b = 0.35 mm. The coupling coeicient (M) is deined as [15]: M e m e m (1) Where M is the coupling coeicient between two SIW resonators, e is the higher resonant requency and m is the lower resonant requency. Figure 10 shows the evolution o the coupling coeicient (M) as a unction o the iris opening, where W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, R = 0.97 mm, L = 6.4 mm, W = 3.4 mm, a = 1.3 mm and b = 0.35 mm, obtained using Ansot HFSS.

5 ANALYSIS OF SUBSTRATE INTEGRATED WAVEGUIDE (SIW) RESONATOR AND DESIGN OF MINIATURIZED SIW BANDPASS FILTER 59 The simulation results or S-parameters o second-order SIW bandpass ilter in LTCC technology using high permittivity substrate are shown in Fig. 1. TABLE III COMPARISON BETWEEN THE PROPOSED FILTER AND THE FILTERS PRESENTED IN REFERENCES Reerence ilter Central requency (GHz) Fractional bandwidth (%) Insertio n loss (db) Return loss (db) Size (mm 3 ) [16] > [17] > [18] > [19] > Proposed > Fig. 10. Coupling coeicient (M) evaluated as a unction o the iris opening, where W SIW = L SIW =.64 mm, D = 0.15 mm, P = mm, R = 0.97 mm, L = 6.4 mm, W = 3.4 mm, a = 1.3 mm and b = 0.35 mm. According to Fig. 10, when the iris opening increases the coupling coeicient (M) becomes large, as required or the ilter speciication, the coupling coeicients M 1, = 0.63 can be obtained or a iris opening =.6 mm. TABLE II PHYSICAL DIMENSIONS OF SECOND-ORDER SIW BANDPASS FILTER IN LTCC TECHNOLOGY USING HIGH PERMITTIVITY SUBSTRATE Symbol Dimension (mm) Symbol Dimension (mm) D 0.15 d 0.45 P Iris opening 1.04 L SIW.64 Slot length o CPW 0.17 W SIW.64 Slot height o CPW 0. R 0.9 Substrate thickness W M 0.68 L M 0.78 W 3.4 a 1.3 L 6.4 b 0.4 n 0.1 Figure 11 shows the geometrical parameters o second-order SIW bandpass ilter in LTCC technology using high permittivity substrate. Fig. 1. Simulated S-parameters o second-order SIW bandpass ilter in LTCC technology using high permittivity substrate. Simulated results presented in Fig. 1 show that the ilter has a ractional bandwidth o 7 % centered at 14.3 GHz with insertion loss o 0.7 db and return loss o 1 db. The size o this ilter is only mm 3. In order to veriy the properties o proposed ilter, a comparison between the proposed ilter and the ilters reported in the reerences are presented in Table III. In According to the comparisons (Table III), the ilters in [16], [17] have the return losses quite good, but their insertion losses are much higher than that o the proposed one. Although the ilter in [18] has a low insertion loss, their return loss is not good enough. Thus, the ilter in [19] has good perormance on the whole, but their ractional bandwidth is extremely small than that o the proposed ilter. Generally, the proposed ilter proves low insertion loss, better return loss and small dimensions. Fig. 11. Top view o second-order SIW bandpass ilter in LTCC technology using high permittivity substrate. Ater optimization by Ansot HFSS, the optimal parameters o the ilter (Fig. 11) are provided in Table II. V. CONCLUSION In this paper, a detailed analysis was done on SIW resonator. The results obtained show that the use o high permittivity substrate in the SIW resonator allows reducing the size and the increase the insertion losses o resonator. Thus, the increase o the thickness o each dielectric material used in the SIW resonator has caused the increase the unloaded Q-actor and the reduction the ractional bandwidth o the resonator.

6 60 A. RHBANOU, S. BRI, M. SABBANE The wideband SIW bandpass ilter in LTCC technology using high permittivity substrate has been designed, by proving low insertion loss, better return loss and small dimensions. The ilter has a ractional bandwidth o 7 % centered at 14.3 GHz with insertion loss o 0.7 db and return loss o 0 db. The size o this ilter is only mm 3. The proposed ilter has small size and low loss, can be directly integrated with other circuits without any additional mechanical assembling tuning, this ilter is useul or microwave and millimeter-wave applications. REFERENCES [1] Y. Cassivi, L. Perregrini, P. Arcioni, M. Bressan, K. Wu, and G. Conciauro, Dispersion Characteristics o Substrate Integrated Rectangular Waveguide, IEEE Microwave and Wireless Components Letters, vol. 1, pp , Sept. 00. [] J. H. Lee, S. Pinel, J. Papapolymerou, J. Laskar, and M. M. Tentzeris, Low-Loss LTCC Cavity Filters Using System-on-Package Technology at 60 GHz, IEEE Transactions on Microwave Theory and Techniques, vol. 53, pp , Dec [3] D. Deslandes and K. Wu, Accurate modeling, wave mechanism, and design consideration o a substrate integrated waveguide, IEEE Transactions on Microwave Theory and Techniques, vol. 54, pp , Jun [4] A. Rhbanou, S. Bri, and M. Sabbane, Design o Substrate Integrated Waveguide Band Pass Filter Based on CSRR-EBG, International Journal o Microwave and Optical Technology, vol. 11, pp. 7 14, Jan [5] T. Djerai and K. Wu, Super-Compact Substrate Integrated Waveguide Cruciorm Directional Coupler, IEEE Microwave and Wireless Components Letters, vol. 17, pp , Nov [6] X.-C. Zhang, Z.-Y. Yu, and J. Xu, Novel Band-Pass Substrate Integrated Waveguide (SIW) Filter Based on Complementary Split Ring Resonators (CSRRS), Progress in Electromagnetics Research, vol. 7, pp , 007. [7] F. Xu and K. Wu, Guided-Wave and Leakage Characteristics o Substrate Integrated Waveguide, IEEE Transactions on Microwave Theory and Techniques, vol. 53, pp , Jan [8] A. Rhbanou, S. Bri, and M. Sabbane, Design o Dual-Mode Substrate Integrated Waveguide Band-Pass Filters, Circuits and Systems, vol. 6, pp , Dec [9] Y. Huang, Z. Shao, and L. Liu, A Substrate Integrated Waveguide Bandpass Filter Using Novel Deected Ground Structure Shape, Progress in Electromagnetics Research, vol. 135, pp , 013. [10] Y. Arat, S. P. Singh, S. Arya, and S. Khan, Modelling, Design and Parametric Considerations or Dierent Dielectric Materials on Substrate Integrated Waveguide, Wseas Transactions on Communications, vol. 13, pp , 014. [11] A. Rhbanou, S. Bri, and M. Sabbane, Design o X-Band Substrate Integrated Waveguide Bandpass Filter with Dual High Rejection, Microwave and Optical Technology Letters, vol. 57, pp , Jul [1] A. Rhbanou, S. Bri, and M. Sabbane, Design o K-Band Substrate Integrated Waveguide Band-Pass Filter with High Rejection, Journal o Microwaves, Optoelectronics and Electromagnetic Applications, vol. 14, pp , Dec [13] D. M. Pozar, Microwave Engineering, Hoboken: Wiley, 01. [14] J. S. Hong and M. J. Lancaster, Microstrip Filters or RF/Microwave Applications, Chichester: Wiley, 001. [15] T.-M. Shen, C.-F. Chen, T.-Y. Huang, and R.-B. Wu, Design o Vertically Stacked Waveguide Filters in LTCC, IEEE Transactions on Microwave Theory and Techniques, vol. 55, pp , Aug [16] A. Ismail, M. S. Razalli, M. A. Mahdi, R. S. A. R. Abdullah, N. K. Noordin, and M. F. A. Rasid, X-band Trisection Substrate-Integrated Waveguide Quasi-Elliptic Filter, Progress in Electromagnetics Research, vol. 85, pp , 008. [17] Z. Wang, S. Bu, and Z. Luo, A KA-Band Third-Order Cross-Coupled Substrate Integrated Waveguide Bandpass Filter Base on 3D LTCC, Progress in Electromagnetics Research C, vol. 17, pp , 010. [18] Z. Xiangjun, M. Caoyuan, and C. Deqiang, Compact Dual-Passband LTCC Filter Exploiting Eighth-Mode SIW and SIW Hybrid with Coplanar Waveguide, Electronics Letters, vol. 50, pp , Nov [19] B. Liu, J. Zhou, R. Liu, Q. Wu, K. Zhang, A 35 GHz Reduced-Size Bandpass Filter Based on SIW in LTCC Technology, in Proc. o IEEE International Conerence on Microwave Technology and Computational Electromagnetics, China, 013, pp

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