New Generation Reliability Model
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1 New Generation Reliability Model S.-Y. Liao, C. Huang, T. Guo, A. Chen, Jushan Xie, Cadence Design Systems, Inc. S. Guo, R. Wang, Z. Yu, P. Hao, P. Ren, Y. Wang, R. Huang, Peking University Dec. 5th, 2016
2 Agenda Advanced MOSFET and FinFET Reliability Challenge New Generation Reliability Model Verification Reliability Simulation Flow and ADE Integration Summary Cadence Design Systems, Inc. All rights reserved.
3 Advanced MOSFET and FinFET reliability challenge Cadence Design Systems, Inc. All rights reserved.
4 MOSFET Reliability Comparing fresh data (solid line) with different stress time data (dot line) Cadence Design Systems, Inc. All rights reserved.
5 HCI (Hot Carrier Injection) Ben Kaczer, IEDM 2016 tutorial Cadence Design Systems, Inc. All rights reserved.
6 BTI (Bias Temperature Instability) Cadence Design Systems, Inc. All rights reserved.
7 TDDB (Time-Dependent Dielectric Breakdown) Ben Kaczer, IEDM 2016 tutorial Cadence Design Systems, Inc. All rights reserved.
8 Long Channel Device Reliability Data/Model HCI model BTI (stress) model: C. Hu, IEEE TED, 1985 All degradation effects are modeled and predicted as a power function versus time. N. Kimizuka, IEEE VLSI, Cadence Design Systems, Inc. All rights reserved.
9 Saturation Effect of HCI in Advanced MOSFET and FinFET Planar MOSFET I DS degradation 60% 50% 40% 30% 20% 10% 0% 100.0% FinFET nfinfet 15nm 25nm lin-lin Stress Time [s] log -log I DS degradation 10.0% 1.0% 15nm 25nm V. Huard, IEDM, % Stress Time [s] Interface trap saturation, not always power function C.L. Lin, TED, Cadence Design Systems, Inc. All rights reserved.
10 Recovery Effect and Recovery Model Extrapolation in BTI V GS2 V GS1 V GR1 V GR2 V G V GS3 Pattern 1 Pattern 2 (a) V TH t 1 t 2 t 12 Time V TH0 Pattern 1 Pattern 2 (b) t 1 t 2 t 12 Time No good model, especially recovery extrapolation algorithms for BTI history and recovery Cadence Design Systems, Inc. All rights reserved. 10
11 New Generation Reliability Model Cadence Design Systems, Inc. All rights reserved.
12 New generation reliability models Including physical and more accurate HCI and BTI models HCI model can reproduce the saturation effect if stress time is long enough The BTI model includes: Accurate BTI stress model Include physical recovery effect Capable to handle more complex equations Consider recovery effect for extrapolation Cadence Design Systems, Inc. All rights reserved.
13 Model result demonstration HCI models Degradation saturation effect HCI (Vgs = 1V) Degradation saturation 1.E-01 1.E-03 1.E-05 1.E-07 1.E-09 1.E-11 Vds = 0.8V 1.2V 1.6V 1.E-13 1.E-08 1.E-06 1.E-04 1.E-02 1.E+00 1.E+02 1.E+04 1.E+06 1.E+08 V. Huard, IEDM, Cadence Design Systems, Inc. All rights reserved.
14 Model result demonstration BTI models History effect: sequential simulation step Vgs stress Vgs 1 Stress phase Vgs 3 Stress phase Vgs 2 Recovery phase Deg Time 0 t1 t2 t3 Time Cadence Design Systems, Inc. All rights reserved.
15 BTI model with recovery effect -1.6V -1.4V Degradation [a. u.) -1V -1.2V Stress only Simu. Result 0V Vgs Time [s] Cadence Design Systems, Inc. All rights reserved.
16 BTI model prediction with recovery effect Vgs Duty = 50% Time A periodic square waveform is applied on an invertor during a few milliseconds. Then prediction for 3 years. VTH (a.u.) w/ recovery wo/ recovery VTH (a.u.) Iterated results Iteration step: N=10 (a) Time(s) 10 9 Over-estimation in 3 years Cadence Design Systems, Inc. All rights reserved.
17 BTI model with different recovery voltage Vgs Wave A duty = 1 Wave B Time The duty cycle is varied from 0% to 100% for two gate bias waves with different recovery bias values. When duty = 100%, a constant stress bias is applied. VTH (a.u.) Waveform Type B results A Waveform Type A results B Const. stress Degradation@3 years (c) Duty factor Cadence Design Systems, Inc. All rights reserved.
18 Model result demonstration BTI model Extrapolation: 13-stage ring oscillator from fresh to 3 years. Voltage [V] Ring oscillator output signal Fresh after 1 sec hours 3.17 years E-10 1E E-09 2E-09 Time [s] Cadence Design Systems, Inc. All rights reserved.
19 Reliability flow and ADE integration Cadence Design Systems, Inc. All rights reserved.
20 Virtuoso Reliability Simulation Solution Cadence Design Systems, Inc. All rights reserved.
21 Reliability Simulation Setting in ADE Open reliability setting dialog box Simulation Reliability Setup Enable RelXpert or Spectre Native For some advanced settings and special features, go through these tabs. Simulation Mode Reliability Effect Setting Other Reliability Options Cadence Design Systems, Inc. All rights reserved.
22 Reliability Analysis Results Schematic annotation Waveform overlay Degradation output Cadence Design Systems, Inc. All rights reserved.
23 Aging Analysis Output Example Device Trise Device degradation Rank Instance dtemperature didsat(hci+bti, %) didlin(hci+bti, %) dvtlin(hci+bti, V) 1 I1.M e e e e e e-01 2 I0.M e e e e e e-01 3 I12.M e e e e e e-01 4 I9.M e e e e e e-01 5 I8.M e e e e e e-01 6 I11.M e e e e e e-01 7 I4.M e e e e e e-01 8 I6.M e e e e e e-01 9 I10.M e-01 Input.tmideg Cadence Design Systems, Inc. All rights reserved.
24 Summary Cadence Design Systems, Inc. All rights reserved.
25 Summary New generation reliability model developed HCI model with saturation effect The BTI model includes: Accurate BTI stress model Capable to handle more complex equations Include recovery effect Consider recovery effect for extrapolation Cadence Design Systems, Inc. All rights reserved.
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