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1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING QUESTION BANK III SEMESTER EC Electronic Devices and Circuits Regulation 2013 Academic Year Prepared by Mr. K. Sanjay, Assistant Professor(OG)/ECE Ms. S. R. Preethi, Assistant Professor(OG)/ECE

2 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING QUESTION BANK SUBJECT : EC6202 Electronic Devices and Circuits SEM / YEAR: III / II EC 6202 ELECTRONIC DEVICES AND CIRCUITS UNIT-I: PN JUNCTION DEVICES PN junction diode structure, operation and V-I characteristics, diffusion and transient capacitance -Rectifiers Half Wave and Full Wave Rectifier, Display devices- LED, Laser diodes- Zener diode characteristics- Zener Reverse characteristics Zener as regulator PART A Q.NO QUESTIONS BT LEVEL DOMAIN 1. Explain model diffusion capacitance in PN junction diode. 2. What is a rectifier? Name it s types? 3. How to represent the symbol of the following PN diode, Zener diode, LED, UJT. 4. Find the diffusion capacitance for a silicon diode with a 15 ma forward current, if the charge carrier transit time is 70ns. 5. With suitable expression what is transition capacitance and Diffusion capacitance? 6. What is laser diode and give its applications? 7. Give the diode current equation. 8. List out the factors on which barrier potential depends. BTL 4 9. Compose the effect of temperature on reverse saturation current of a diode. BTL Outline transformer utilization factor and state its value for HWR and FWR. 11. Compare and contrast between p-n junction diode and zener diode. BTL 4

3 12. Explain the terms knee voltage and breakdown voltage. BTL Describe peak inverse voltage. 14. Interpret the term diffusion capacitance or storage capacitance. 15. Locate some of the applications of laser diode. 16. A silicon diode has a saturation current of 7.5 μa at room temperature to 300 K. Estimate the saturation current at 400 K. BTL 6 Creating 17. Distinguish between Zener Breakdown and Avalanche breakdown. BTL What is meant by dynamic resistance of diode? 19. A Ge diode has a saturation current of 10μA at 300ᵒ K. Estimate the saturation BTL 5 current at 400ᵒK. 20. Show the VI characteristics of Zener diode. PART B 1. i) Assess the action of a full wave rectifier using diodes and give waveforms of input and output voltages. (6) ii) A FW diode rectifier has V1=100sinωt, R L =900Ω and R f =100Ω. Come up with the peak and dc load current, DC load voltage, the peak instantaneous diode current, the PIV on the diode, AC input power, output power, Rectification efficiency of the FW rectifier. (7) 2. Briefly enumerate the following (i) Laser diodes (7) (ii) Zener diode as a voltage regulator (6) BTL 6 BTL1 creating 3. With neat sketch compose the construction, operation and its characteristics of PN junction diode. Also list its advantages, disadvantages and its applications. (13) BTL (i) Determine the minimum and maximum values of the load resistance of the zener shut regulator to meet the following specifications V S =24V, V Z =10V, i ZMIN =3mA, I ZMAX =50mA and R L =250Ω. (7) (ii) Show the circuit diagram of a half wave rectifier for producing a positive output voltage. Explain the circuit operation and sketch the waveforms. (6) Make use of a diagram recollect the working of Zener diode and its forward and reverse characteristics. Also distinguish between Avalanche and Zener break downs (13) BTL2

4 6 Draw the circuit diagram and compose the working of full wave bridge rectifier with output filter and derive the expression of average output current and ripple factor (13) BTL5 7 (i) Summarize the effect of temperature on PN junction diode and draw its switching characteristics (8) (ii) The reverse saturation of a silicon PN junction diode is 10μA. Infer the diode current for the forward bias voltage of 0.6V at 25ᵒ (5) 8 (i) Explain the construction, operation and characteristics of LED.(7) (ii) Describe the zener diode shunt voltage regulator. (6) 9 Derive ripple factor, PIV, efficiency and TUF of Bridge rectifier with circuit diagram and input/output waveforms (13) 10 Explain the operation of half wave rectifier and derive FF, PF, RF, TUF, PIV and efficiency. (13) 11 (i) Review the expression for current throught the PN junction diode (7) BTL4 BTL4 (ii) Outline the following characteristics of zener diode (6) 1. Avalance breakdown 2. Zener breakdown 12 (i) Explain the VI characteristics of zener diode.(6) (ii) Brief about the terms Diffusion capacitance and transient capacitance with respect to the diode (7) 13 (i) In what aspect is a LED different from a PN junction diode? State the applications of LED. (7) (ii)explain the working of center tapped full wave rectifier with and without filter with neat diagrams. (6) 14 A bridge rectifier is supplied with 230V, 50Hz supply with stepdown ratio of 3:1 to a resistive load of 10kΩ. If the diode forward resistance is 75Ω while the transformer secondary resistance is 10Ω. Calculate the maximum and average values of current, dc output voltage and rms voltage, efficiency, ripple factor, peak factor, form factor, PIV and TUF. (13) PART C 1. An AC supply of 220V, 50 Hz is applied to a HWR through a transformer of turn ratio 10:1. Find (i) Maximum RMS load Voltage (ii) Maximum RMS load current (iii) Power delivered to the load (iv) AC power input (v) Efficiency and ripple factor (vi) PIV, ripple frequency, ripple voltage and ripple current (15) BTL 4 2. A 230 V, 50 Hz voltage is applied to the primary of a 5:1 stepdown center-tapped transformer used in a FWR having a load of 900Ω. If the diode resistance and the secondary coil resistance together has a resistance of 100Ω determine, (i) DC

5 voltage across the load (ii) DC current flowing through the load (iii) DC power delivered to the load (iv) PIV across each diode (v) Ripple voltage and its frequency (15) 3 A germanium diode has a contact potential of.2volt while the concentration of accepted impurity atoms is 3x10^20/m^3. Calculate for a reverse bias of.1 volt, the width of the depletion region. If the reverse bias is increased to 10volt, calculate the new width of the depletion region. Assuming cross sectional area of the junction as 1mm^2, Analyse the transition capacitance values for both the cases. Assume Ɛr=16 for germanium (15) 4 (ii)estimate the ideal reverse saturation current density in a silicon PN junction at T=300K, Consider the following parameters in the silicon pn junction. Nd =Na= 10^16cm^-3, ni= ^10 cm^-3, Dn =25 cm2/s, Tp0= Tn0=5 10^-7 s, Dp=10cm2/s, Ɛr =11.7.Comment on the result. (15) BTL 5 BTL 6 Creating UNIT II- TRANSISTORS BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristor and IGBT - Structure and characteristics. PART A Q.No Questions BT Level Domain 1. List any two points of comparison between JFET with BJT. 2. Distinguish between h-parameter and hybrid π model. 3. Solve I c and I E for a transistor that has α dc = 0.99and I B = 150μA. Determine the value of β dc for the transistor. 4. Show how an SCR can be triggered on by the application of a pulse to gate terminal. 5. Inspect why it is necessary to stabilize the operating point of transistor. BTL 4 6. Compare BJT and FET. 7. Make use of the values of transistor has β=150, find the collector and base current if I E = 10mA. 8. Identify some applications of JFET. 9. How does a transistor act as a switch? 10. Examine thermal runaway in transistors. BTL Why FET is more temperature stable compared to BJT? 12. Formulate the relation between α dc and β dc. BTL 6 Creating

6 13. What is meant by biasing a transistor? 14. Draw the two transistor equivalent of SCR. 15. Discuss the advantages of FET over BJT. BTL 6 Creating 16. Define amplification factor of JFET. 17. Explain the intrinsic standoff ratio of a UJT. 18. Distinguish the latching current & holding current. BTL A BJT has a base current of 200μA. Determine the collector current and β. BTL In a n channel JFET I DSS =20 ma and V P = -6V. Estimate the drain current when V GS = -3V. PART B 1. With the help of suitable diagram, explain the working of enhancement MOSFET (13) 2. Describe the construction and working of UJT with it s equivalent circuit and VI characteristics. (13) 3. Elaborate the construction and operation of NPN transistor with neat sketch. Also comment on the characteristics of NPN transistor (13) 4. With neat sketch, illustrate the construction, operation and characteristics of SCR. (13) 5. Enumerate the selection of Q point for transistor bias circuit and discuss the limitations on the output voltage swing (7) Show the cross section diagram of an N type enhancement mode MOSFET. Briefly explain its operation (6) 6. Demonstrate the basic construction and equivalent circuit of a UJT. Briefly explain the device operation (7) Show the four layer construction of SCR and two transistor equivalent circuit. Explain the device operation (6) 7. Model the CE configuration of NPN transistor, and explain its input and output characteristics with suitable diagrams. (13) 8. Elaborately discuss the drain current characteristics and transfer characteristics of MOSFET. (13) 9. Recall the input and output characteristics of a CE transistor configuration. List out the comparisons between CE, CB and CC configurations. (13) BTL 5 BTL1 BTL 6 BTL1 BTL 5 Creating 10. (i) Illustrate early effect describe with relevant expressions and figure (6) (ii) Demonstrate the input and output characteristics of CE configuration (7)

7 11. Explain the structure and operation of Insulated Gate Bipoar Transistor. (7) Distinguish MOSFET and IGBT (6) 12. (i) Examine the various current components in a transistor. (7) (ii) Explain the performance of FET as a voltage regulator. (6) 13. (i) Take part in discussion of the two transistor model of a thyristor in detail. (7) (ii) Sketch and explain the typical shape of drain characteristics of JFET for V GS =0 with indication of four region clearly. (6) 14. (i) Elaborately discuss the structure and characteristics of IGBT. (7) (ii) Summarize the operation of UJT. (6) PART C 1. Design a voltage divider bias circuit for transistor to establish the quiscent point at V CE =12V, I C =1.5mA, stability factor S 3, β = 50, V BE =0.7V, V CC =22.5V and R C =5.6kΩ. (15) 2. Draw d.c load line and a.c load line for the following transistor configuration. Obtain the operating point. (15) BTL4 BTL4 BTL4 BTL 6 Creating 3. (i) For an n-channel silicon FET with a=3x10-4 cm and Nd=10 15 electrons/cm -3. Evaluate (a) pinch off voltage (b) the channel half width for V GS = 0.5V p. (5) 4. (ii) In biasing with feedback resistor method, a silicon transistor with feedback resistor is used. The operating point is 7V, 1mA and VCC=12V. Assume β=100. Determine the value of RB, Stability factor and the new operation point if β=50 and all other circuit values the same. (10) The reverse leakage current of the transistor when connected in CB configuration is 0.2 ma and it is 18 μa when the same transistor is connected in CE configuration. Determine α dc &β dc of the transistor. Assume I B =30mA. (15) BTL 4 BTL 5

8 UNIT-III: AMPLIFIERS BJT small signal model Analysis of CE, CB, CC amplifiers- Gain and frequency response MOSFET small signal model Analysis of CS and Source follower Gain and frequency response-high frequency analysis PART A Q.No Questions BT Level Domain 1. Show the hybrid model of BJT in CE configuration 2. What are amplifiers? Write it s uses? 3. Model the small signal equivalent circuit of a CS JFET. 4. Justify the need of coupling capacitors in amplifier design. BTL5 5. Explain the four h-parameters. BTL 4 6. For an amplifier, midband gain =100 and lower cut-off frequency is 1 khz. BTL 6 Creating Estimate the gain of an amplifier at frequency of 20Hz. 7. Explain the significance of coupling and bypass capacitor on BW of amplifiers. 8. Explain the term bandwidth and gain bandwidth product. BTL5 9. How can a DC equivalent circuit of an amplifier be obtained? 10. A common emitter amplifier has an input resistance of 2.5kΩ and voltage gain of 200. If the input signal voltage is 5mV. Find the base current of the amplifier. 11. Point out why CE configuration is preferred over CB configuration. BTL Outline the procedure to draw the a.c. equivalent of a network. 13. Identify the reason for fall in gain at low and high frequencies. 14. Define an intrinsic standoff ratio of UJT and draw its equivalent circuit. 15. Discuss about thermal runaway and how it could be avoided. BTL 6 Creating 16. Develop the expression for pinch off voltage with respect to JFET. 17. When V GS of the FEET changes from -3.1V to 3V the drain voltage changes BTL 4 from 1 ma to 1.3mA Calculate the value of transconductance. 18. Define desensitivity. 19. Show the frequency response curve of an amplifier and what is 3 db frequency.

9 20. Compare the performance of CE,CB,CC amplifier configurations. PART B 1. Illustrate the h-parameter model of a BJT-CE amplifier and derive the equations for voltage gain, current gain, input impedance and output impedance (13) 2. Describe about small signal MOSFET amplifiers (NMOS) and obtain the expression for it transconductance. (13) 3. Develop the h parameter equivalent circuit for a typical common emitter amplifier and derive the expression for Ai, Ri, Av and Ro. (13) BTL1 BTL1 4. Derive the expression for the voltage gain of CS amplifier (6) For CS amplifier, the operating point is defined by VGSQ=-2.5V,Vp= -6V and IdQ=2.5mA with IDSS=8mA. Also RG=1MΩ, RS=1 KΩ, RD=2.2KΩ and VDD=15V.Calculate gm, rd, Zi, Zo and Av (7) 5. Discuss the factors involved in Ic, Rc and Re for a single stage common emitter BJT amplifier circuit, using voltage divider bias (7) A CC amplifier shown in below figure has VCC=15 V, RB=75kΩ and RE=910Ω The β of the silicon transistor is 100 and the load resistor is 600Ω. Estimate rin and Av (6) BTL3 BTL6 Creating 6. The MOSFET shown in below figure has the following parameters. VT=2V, β= , rd=75kω. It is biased at ID=1.93 ma. Determine the impedance and voltage gain (7) BTL 5

10 With neat circuit diagram, evaluate the ac analysis for common source using equivalent circuit NMOSFET amplifier (6) 7. Explain about CS amplifier and derive the expression for gain, input impedance and output impedance and also draw its small signal equivalent circuit (13) 8. The hybrid parameters of a transistor used as an amplifier in the CE configuration arehie = 800Ω, hfe = 46, hoe = 80 x 10-6 and hre = 5.4x If R L = 5K and R s =500Ω. Find Ai, Ri, Av, Pi. (13) 9. Inspect the high frequency response of FET and derive the expression for lower cut off frequency and upper cut off frequency (13) 10 Demonstrate the low frequency analysis of BJT and also determine the effect of Cs, Cc & Cc on the low frequency response of BJT (13) 11 Explain about CC amplifier and derive the expression for h parameters of the same. Also derive the expression for gain, input impedance and output impedance of CC amplifier. (13) 12 (i) What are the factors affect the bias stability of a transistor? (6) (ii) Define the stability factors with respect to the changes in ICO,VBE and β. Why is the stability with respect to VCE not considered? (7) 13 (i) Show the low frequency h-equivalent model of a transistor amplifier operating in CE mode and why is this circuit not valid for high frequencies (7) (ii) Define the trans conductance of BJT in the CE mode. How it is related to h parameters. (6) 14 Draw the circuit diagram of common drain MOSFET amplifier. Derive the expression for its voltage gain, input resistance and output resistance. (13) PART C 1. Determine the mid band gain, upper cutoff frequency of a common-source amplifier fed with the signal having internal resistance Rsig=100kΩ. The amplifier has R G =4.7MΩ, R D =R L =15kΩ, gm=1ma/v, ro=150kω, Cgs=1 pf and Cgd=0.4pF. (8) BTL3 BTL4 BTL4 BTL1 BTL 4 BTL1

11 (ii) For CS amplifier, the operating point is defined by V GSQ =-2.5V, V P =-6V and I dq =2.5mA with I DSS =8mA. Also R G =1MΩ, R S =1KΩ,R D =2.2kΩ and V DD =15V. Calculate g m, r d, Z i, Z O and A V. (7) 2. Examine the midband gain and bandwidth of a CE amplifier. Assume lower cutoff frequency is 100Hz. Let Hfe=β=100, Cbe=4pF, Cbc=0.2pF and V A =. BTL 4 (15). 3 The figure shows a common-emitter amplifier. Determine the input resistance, ac load resistance, voltage gain and ouput voltage. (15)

12 4 For a CB amplifier driven by voltage source of internal resistance Rs=1200Ω. The load impedance is resistor RL=1000Ω. The H parameters are Hin=22Ω, Hcb=3x10-4, Hfb= and Hinf=0.5A/V. Estimate the current gain A, Input impedance Ri, voltage gain Av, overall gain Ais, overall voltage gain Avs and output impedance Zo. (15) BTL 5 UNIT-IV: MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER BIMOS cascade amplifier, Differential amplifier Common mode and Difference mode analysis FET input stages Single tuned amplifiers Gain and frequency response Neutralization methods, power amplifiers Types (Qualitative analysis). PART A Q.No Questions BT Level Domain 1. What are cascaded amplifiers? 2. Model the ideal tuned circuits and write the expression for it s resonant frequency. 3. Explain how the differential amplifier can be used as an emitter coupled phase BTL 4 inverter 4. Elaborate the need for neutralization. BTL 6 Creating 5. Identify the need for cascading the amplifiers. 6. What is CMRR? Examine various methods of improving CMRR. BTL 4 7. Recall the applications of differential amplifier. 8. Why neutralization is important? And give its types.

13 9. Construct a Differential amplifier and what is the ideal value of CMRR? 10. Distinguish common mode and difference mode. BTL Summarize the Advantages and performance of class-c amplifier. 12. Explain the term cross over distortion. BTL Illustrate the ideal tuned circuit and write the expression for it s resonant frequency. 14. State Miller s theorem. BTL1 15. Explain the bootstrapping technique. BTL5 16. Compare the performance of various power amplifier types. 17. Discuss need of Complementary symmetry amplifiers. BTL 6 Creating 18. Tell the advantages of Push pull amplifier. BTL1 19. Enumerate the advantages of single tuned amplifiers. BTL1 20. Outline the need for constant current source for difference amplifier. PART B 1. Illustrate the circuit of emitter coupled BJT differential amplifier, and derive expressions for differential gain, common mode gain and CMRR (13) 2 What is Neutralization? Explain any one method in brief? (13) 3. With neat sketch explain two stage cascaded amplifier and derive its overall Av, AI,RI and Ro (13) 4. Show the differential amplifier and its ac equivalent circuit. Derive for Ad and Ac. (13) 5. With neat sketch, explain the BJT differential amplifier with active load and derive Ad, Ac and CMRR. How CMRR can be improved (13) 6. Explain the different types of neutralization technique used in tuning amplifier (13) 7. Develop the equation for differential mode gain and common mode gain of a differential amplifier. (13) 8. Interpret the qualitative analysis for power amplifiers. (13) BTL 5 9. Discuss the complementary symmetry class B amplifier and obtain its efficiency (7) Elaborate the operation of class AB amplifier to avoid cross over distortion (6) 10. The dual input balanced output differential amplifier having R s =100Ω, R C =4.7KΩ, R E =6.8KΩ,h fe =100,VCC=+15V, VEE=-15V. Find operating point BTL 6 Creating

14 values, differential &common mode gain, CMRR and output if V s1 =70mV(p-p)at 1 khz and V s2 =40mV(p-p) (13) 11. A Class C amplifier with VCC=25V has RL=680Ω,Cp=4300pF,Lp=20μH and Rw=0.06Ω.The transistor has VCE(sat)=0.6V.Calculate the appropriate signal frequency, the output power and circuit efficiency (13) BTL Draw a circuit diagram to show how the current in the output transistors of a BTL 4 power amplifier can be limited to a desired maximum level. Examine the circuit operation. (7) Compare MOSFET to power BJT (6) 13. Classify the power amplifiers and calculate the efficiency each types (13) 14. Explain about Class A transformer coupled amplifier and derive the expression for efficiency of the same. (13) PART-C BTL 4 1 Compare and differentiate the types of neutralization methods (15) BTL4 2 Solve the gain and frequency response of single tuned amplifiers. (15) BTL 6 Creating 3 The differential amplifier has the following values RC = 50 K, Re = 100K and BTL 5 Rs = 10K. The transistor parameters are rπ = 50K= h ie, h fe = Vo = 2 x10^3, r o = 400K.Determine Ad, Ac and CMRR in db. (15) 4 Construct BiMOS cascade amplifier. (15) UNIT-V: FEEDBACK AMPLIFIERS AND OSCILLATORS Advantages of negative feedback voltage / current, series, Shunt feedback positive feedback Condition for oscillations, phase shift Wien bridge, Hartley, Colpitts and Crystal oscillators. PART A Q.No Questions BT Level Competence 1. Tell the disadvantages of negative feedback in amplifiers and how it can be overcome. 2. Show the expression for the frequency of oscillations of a wein bridge oscillator. 3. Summarize the advantages of negative feedback circuits. 4. What is the advantage of a Colpitts oscillator compared to a phase shift oscillator? 5. Which is the most commonly used feedback arrangement in cascaded amplifier and why? 6. Recall the Barkhausan criterion for an oscillator. 7. Identify the difference between an oscillator and amplifier.

15 8. Name two high frequency oscillators. 9. Outline the advantages of crystal oscillator. 10. Discuss about Nyquest s stability criteria for feedback amplifiers. BTL 6 Creating 11. Develop the oscillator model uses both positive and negative feedback? Why? 12. Determine the operating frequency of transistor Hartley oscillator if L1=50μH, BTL5 L2=1mH, and mutual inductance between the coils M=10 μh and C=10pF. 13. List the five characteristics of an amplifier which are modified by negative BTL4 feedback. 14. Elaborate on Piezo electric effect. BTL 6 Creating 15. List out the advantages of crystal oscillator. 16. Examine the effects on bandwidth and output impedance due to various types BTL4 of feedback. 17. Illustrate the expression for frequency of oscillation of a Wein bridge oscillator. 18. Distinguish the negative and positive feedback. BTL4 19. Identify the limitations of LC and RC oscillators. BTL3 20. A wein bridge oscillator is used for operate at f o =10KHz. If the value of R is 100Ω. Estimate the value of capacitor. PART-B 1. Illustrate the circuit of CE amplifier with current series feedback and obtain the expression for feedback ratio, voltage gain, input and output resistances. (13) 2 Explain the operation of Colpitts Oscillator with neat circuit diagram. Also derive the expressions for the frequency of oscillation and the condition for maintenance of oscillation. (13) 3. Calculate Rif, Rof, Av and Avf for the following (i) Voltage hunt feedback amplifier (7) (ii) Current series feedback amplifier (6) 4. Outline the following with neat diagram. (i) RC phase shift oscillator.(7) (ii) Hartley oscillator. (6) 5 Make use of a circuit diagram explain the operation of the following oscillators. (i) Wein bridge oscillator (4) (ii) Design a Wein bridge oscillator circuit to oscillate at a frequency of 20kHZ. (4) (iii) Crystal oscillator. (5) BTL 5 BTL 4

16 6 Sketch a circuit diagram of a two stage capacitor coupled BJT amplifier that uses series voltage negative feedback. Describe how the feedback operates. (13) 7 Show the circuit diagram explain the operation of an RC phase shift oscillator and derive the condition for oscillation and resonant frequency with BJT. (13) 8 Take part in the discussion of the four types of topology for feedback of an BTL 4 amplifier. Derive the expression for gain with feedback. Mention the advantages of negative feedback amplifier. (13) 9 Solve the frequeny of expression for any two types of oscillator (13) BTL6 Creating 10 A Hartley oscillator is designed with L1 = 2mH, L2 = 20μH and a variable capacitance. Find the range of capacitance value if the frequency of oscillation is varied between 950 to 2050 KHZ (13) 11 Explain the general characteristics of a negative feedback amplifier. Represent voltage series, voltage shunt, current series and current shunt. (13) 12 What is the condition for oscillation of a Hartley Oscillator. Briefly explain the operation and derive the equation for fr and hfe. (13) 13 Compare and differentiate the types of oscillators (13) 14 With a neat circuit diagram, describe the working of a Wien bridge oscillator. Derive an expression for the resonant frequency. Give its advantages and disadvantages (13) PART-C BTL 4 BTL 5 1 Two identical amplifier stages, each with voltage gain of 20dB and B.W of 25kHz are cascaded. To improve gain stability the cascade is provided with negative feedback to the extent of 10%. Estimate the effective gain and bandwidth. (15) BTL4 2 Interpret the various feedback arrangements (15) BTL 5 3 Construct phase shift oscillators (15) 4 Design a Colpitts oscillator with C1 = 100pf and C2 = 7500pf. The inductance is variable. Determine the range of inductance values, if the frequency of oscillation is to vary between 950 KHz and 2050 KHz. (15) BTL 6 Creating

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