A SiC MOSFET for mainstream adoption

Transcription

1 A SiC MOSFET for mainstream adoption Power Electronics Conference 2017, Munich December 5th, 2017 Dr. Fanny Björk, Infineon

2 Multiple levers for a SiC MOSFET must match System compatibility Performance Reliability and robustness assurance Cost position Volume manufacturing capability 2

3 1200V SiC MOSFET: new degree of flexibility for system improvements Higher conversion efficiency Lower switching and conduction losses lead to higher conversion efficiency at same switching frequency higher output power for a given frame size Efficiency [%] η in % L State of the art solution P OUT in W 3L Output Power [kw] Effect on system costs Boosted efficiency enables increased switching frequencies to shrink magnetic components reduced power circuit complexity by using simpler topologies, e.g. 2L instead of 3L Efficiency [%] η in % L State of the art solution 2L P OUT in W Output Power [kw] 3L 3

4 SiC MOSFET fast switching capability must be handled well, plug and play not always possible 3L Si Si to SiC 2L Efficiency in % Different inductor design PCB re-design Original design Output Power in kw Source: Sobe et al. PCIM 2017, Experimental study of Si- and SiC-based Voltage Source Inverters 4

5 Highest efficiency and/or frequency by upgrading 3L topology with SiC MOSFET 3L Si with SiC 3L with 1200 V SiC MOSFET Efficiency [%] khz 72 khz Plug& Play?! Output Power [kw] 5

6 System compatibility

7 CoolSiC MOSFET comes with IGBT compatible gate driving Vgs,th (V) V Vgs,max Vgs,min Vgs,op+ Vgs,op- SiC MOS A SiC MOS B SiC MOS C CoolSiC 7

8 CoolSiC MOSFET comes with high robustness against parasitic turn-on 6 5 Vgs,max Vgs,typ Vgs,min 4.5 V Vgs,th [V] V 1 0 SiC Vendor MOS A SiC Vendor MOS B SiC Vendor MOS C CoolSiC Infineon 8

9 SiC MOSFETs need the feature to be externally slowed down example CoolSiC MOSFET R g controllable di/dt and dv/dt Impact of Rg on dv/dt I(t) IGBT MOSFET R G t Essential pre-condition to cope with EMI aspects 9

10 Driving SiC MOSFETs SiC MOSFETs are fast switching AND high voltage devices, which can reach 50 V/ns or above Higher switching speed requires higher gate drive current strength as well as well-matched delays and accurate timing and tight tolerances SiC MOSFETs might need a negative gate voltage or a Miller clamp SiC MOSFETs may need fast short circuit protection as its short circuit capability is less than traditional IGBT 10

11 EiceDRIVER ICs are perfect fit to CoolSiC MOSFET Features Three families to perfectly match design requrirements 4 single-channel high-side compact gate drivers 2 single- and dual output enhanced drives with shortcircuit protection 1 slew-rate control high-side driver for toughest requirements Available in wide body package with 7.6 mm creepage distance Suitable for operation at high ambient temperature Active Miller clamp Short circuit clamping and active shutdown 100 kv/μs CMTI (1EDU20I12SV: 50 kv/μs CMTI ) Precision short-circuit protection (through DESAT) 12 V/ 11 V typical UVLO thresholds Part Number 1EDI20I12MF DSO-8 150mil 1EDC20H12AH DSO-8 300mil 1EDC60H12AH DSO-8 300mil 1EDC20I12MH DSO-8 300mil 1ED020I12-F2 DSO mil 2ED020I12-F2 DSO-36 1EDU20I12SV DSO-36 Typical Peak Drive Current VCC2 -VEE2 Typical Propagati on Delay Active Miller Clamp Other Key Features 3.5 A 20 V 300 ns Yes Functional Isolation 3.5 A 40 V 125 ns No 9.4 A 40 V 125 ns No 3.5 A 20 V 300 ns Yes 7.6 mm Creepage Clearance; UL 1577 certified with V ISO = 2.5 kv(rms) for 1 min 2.0 A 28 V 170 ns Yes Short circuit clamping; DESAT protection; 2.0 A 28 V 170 ns Yes Active shutdown 2.0 A 28 V 485 ns Yes Real-time adjustable gate current control; Over-current protection; Soft turn-off shut down; Two-level turn-off; UL 1577 certified with V ISO = 5 kv(rms) for 1 min 11

12 Reliability and robustness assurance

13 Reliability and robustness assurance in SiC strongly linked to silicon mainstream technologies P out [W] 10M 1M SiC Central PV* Infineon is a proven leading supplier when it comes to high power high reliability high robustness With this experience we set tough SiC MOSFET requirements pile 100k OBC** 10k String PV* 1k Silicon Remains mainstream technology GaN 1k 10k 100k 1M 10M f sw [Hz] * PV = photovoltaic inverter; ** OBC = onboard charger 13

14 CoolSiC MOSFET shows an oxide stability similar to the well established silicon IGBT's Failure rates of SiC MOSFETs Picture obtained on Si-IGBT's Source: Beier-Möbius et al. PCIM

15 Robustness levels equivalent to IGBT based systems by advanced trench technology DMOS n - Trench e e e e vs strong tradeoff between performance and gate oxide robustness in on-state Performance Positioning p n - e e easier to reach performance without violating gate oxide safe conditions Robustness New publication Vth stability: Aichinger et al. Microelectronics Reliability 80 (2018)

16 CoolSiC MOSFET body diode can be used Test conditions: DC stress of body diode at VGS=-9 V, 20 A per chip, T vj ~150 C VF and RDSon correlations >100h DC operation VF [V]: Intermediate / Final Test 4,9 4,7 4,5 4,3 4,1 Correlation VF 3,9 3,9 4,1 4,3 4,5 4,7 4,9 VF [V]: Pre-Test RDSon [Ohm]: Intermediate / Final Test 0,03 0,03 0,03 0,02 0,02 Correlation RDSon 0,02 0,02 0,02 0,02 0,03 0,03 0,03 RDSon [Ohm]: Pre-Test CoolSiC MOSFET body diode is commutation robust and reliable in long term operation. 16

17 Cost position

18 Better productivity SiC vs. Si Chip costs exemplary System costs exemplary 2017 SiC Si 2017 Si 18

19 Volume manufacturing capability

20 Infineon covers the full range from system understanding to manufacturing Extensive system expertise Application-dedicated products Extensive application system understanding and global support Most comprehensive power portfolio in the market ensures always best-fit Pioneer in SiC technology and expertise in all leading power technologies (Si, SiC, GaN-on-Si) Unique power technology portfolio Extreme high volume flexibility and reliability proven by multi million track record Benchmark in manufacturing 20

21 CoolSiC MOSFET is available in integration levels for different fields of application Industrial grade Automotive grade Photovoltaic EV charging Drives xev (OBC) xev (inverter) UPS/ SMPS 1) Traction Module Discrete Bare die Infineon offers CoolSiC solutions as chips, discretes and modules 1) UPS = uninterrupted power supply; SMPS = Switched-mode power supply 21

22 CoolSiC MOSFET - Revolution to rely on System compatibility Performance Reliability and robustness assurance Cost position Volume manufacturing capability 22

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24 BACK-UP 24

25 CoolSiC MOSFET roll-out Portfolio 2017: the roll-out starts Chips 62 mm TO Pin device 4-Pin device Easy 1B Easy 2B new Easy 1B Sixpack Booster Halfbridge Discrete & Easy 1B new 8 mω R ds(on) 6 mω R ds(on) Easy 2B Halfbridge 11 mω R ds(on) Sixpack new 62 mm Halfbridge 45 mω R ds(on) 2 kw Inverter power 200 kw 25

26 1200 V CoolSiC MOSFET: Discrete portfolio extension 2018 On-resistance, RDSon [mohm] TO247-3 TO IMW120R045M1 IMZ120R045M1 80 IMW120R080M1 IMZ120R080M1 120 IMW120R120M1 IMZ120R120M1 180 IMW120R180M1 IMZ120R180M1 280 IMW120R280M1 IMZ120R280M1 450 IMW120R450M1 IMZ120R450M1 26