AD-A Novel Optoelectronic Devices based on combining. GaAs and InP on Si. Interim report 5. by P. Demeester.
|
|
- Vernon Palmer
- 6 years ago
- Views:
Transcription
1 AD-A Novel Optoelectronic Devices based on combining GaAs and InP on Si Interim report 5 by P. Demeester 1. Introduction In the last 6 months the work has concentrated on the following topics : use of GaAs on InP heteroepitaxial growth for the fabrication of an optical switching OEIC, development of non-planar growth (SMG) for laser-waveguide coupling using InP based materials, development of selective growth of InP for photonic integrated circuits, optimization of In(AI)GaAs/AIGaAs growth on GaAs, optimization of the epitaxial lift-off technology (ELO). DTIC *''LECT_-I A psp~a IIE Ii i
2 2. GaAs on InP based OEIC. The work on heteroepitaxial growth has concentrated on the realisation of an optical switching OEIC. This OEIC integrated a GaAs MESFET driver with an InP optical switch. A schematic representation is shown in figure 2.1 where a cross-section and top view are shown. In a first step the InP/InGaAsP waveguide structures are fabricated (without the inetallisations). In a second step one grows the GaAs active layer structure for the MESFETs. This is done selectively in order to protect the waveguide structures. In a next step the optical switches are finished (Zndiffusion and metallisation) and finally the MESFETs are processed and interconnected with the optical switches. The modulation characteristics of the optical switch (without interconnection) are shown in figure 2.2. About 14 ma is required for the optical switching. Loss measurements showed that the loss in individual waveguides was 0.5 db/cm but the loss in the 7witches was increased to 4 db/cm due to some diffusion of the Au metallisation towards the active waveguiding region. The MESFETs showed a transconductance of 50 ms/mm for a 2 gm gate length. In figure 2.3. we observe the switching behaviour when the MESFET is used for modulation of the switch. A schematic representation of the circuit diagram is also shown. A Vgs voltage of 1.2 V was required for switching. This is also shown in figure 2.4 where we observe the modulation voltage (bottom) and the light modulation (top). A modulation by 1 V resulted in a light modulation of about 6 db.
3 TiW /Au inp optical GaAs MESFET Au/Zn/Cr/Au / switch region region 3 Pol Z7I ni d ~Sio. InGaAsP waveguides MESFET!nP SUbstrate Au Figure 2.1. Integration of a GaAs MESFET and an InP optical switch using heteroepitaxial growth. optical (au.) x I (ma) Figure 2.2. Switching behaviour of the optical switch alone (using current injection). AacqnIon Po U El A~.I b '1t' ecdes :l,i "dor - _.m~_ L I. m mmm i ~ ~ ii
4 4 optical output Vsp =6.4 V GaAs MESFET driver. optical.. output in /state Vr 0 s(v) 0 - p-0 0 l t (MS) Figure 2.4. Modulation of the optical switch :input is Vgs (lower curve), output is optical signal (upper curve)
5 5 3. Non-planar growth on InP The shadow masked growth technique described in the previous interim reports has been further investigated. In the last reports we have concentrated on the GaAs material system but in the last 6 months we have investigated lnp based materials. An additional problem with this material system is that the variation in composition due to the shadow masked growth will also result in a variation of the lattice constant. If this variation becomes to large it will result in a bad material quality. In figure 3.1 we observe the variation of the growth velocity as a function of window width (of the shadow mask) for InGaAs material when using atmospheric and low pressure growth. The variation with spacer layer thickness is also shown. We clearly observe a similar behaviour as for the GaAs growth but an interesting feature is certainly the dependence of reactor pressure. At low pressure we observe a reduced influence of the window width variation. Figure 3.2. shows the variation in composition of InGaAs material. We clearly observe a variation in the composition of the grown material. Figure 3.3 shows the variation in emission wavelength (bandgap) of a lngaas/inp quantum well. We clearly observe a strong dependence on the window width. Note that the variations in composition (figure 3.2) and in thickness applied to QWs (figure 3.1) are in the same direction.
6 6 1.2 C 1.0 low pressure 0.8 ' 0.6 atosphric pressure " " channel width (pr) Figure 3.1. Variation of the growth velocity of InGaAs as a function of the channel width low pressure E ow unmasked growth atmospheric pressure channel width (pm) Figure 3.2. Variaton of the compostion of InGaAs as a function of the channel width.
7 7 (LP1 P d 1450 ( MaAs (4nm) 1400 U "nas 3jr Sm InGaAsP 1.3gm (Snm) W 1! InGaAsP ' 1.31 (4nm) 1200 TnGaAsP 1.3pm (4nm),L channel width (jim) channel width (jim) Figure 3.3. Variation of the bandgap (emission wavelength) of InP/lnGaAs(P) quantum wells as a function of the window width. 5. Selective Prowth of InP based materials We have very recently started to investigate an alternative very promissing possibility to the shadow masked growth technique. The principle is shown in figure 5.1. Two fairly small SiO 2 stripes (typically below 10 gim) are deposited on the substrate with a spacing in the range of 2 to 10 gim. There will be no deposition on the oxide and therefore material will diffuse towards the stripe inbetween the oxide stripes. This will result in an enhanced growth velocity and a variation in composition. A similar investigation as for SMG was performed. Figure 5.2. gives the variation in growth velocity as a function of the oxide width. We clearly observe that the variation is much larger when growing at atmospheric pressure (similar to the observations when using SMG). The variation in composition of bulk material is shown in figure 5.3. and the bandgap variation for QWs is shown in figure 5.4. It is clear from the obtained
8 8 resullts that there are a large number of applications which will benifit from this growth technique. W, siliconoxidel substrate Figure 5.1. Principle of selective growth 1.8 L~ atmospheric pressure 1.4 E low pressure oxide width (1m) Figure 5.2. Variation of the growth velocity as a function of the oxide stripe width.
9 L aunospheric pressure - low pressure< S ' oxide width (pim) W Figure 5.3. Variation of the composition of InGaAs as a function of the oxide stripe width '5- atmospheric pressure (6nm QW) Z1300 low pressure (8nm QW) ~ oxide width (pm) Figure 5.4. Variation of the bandgap (emission wavelength) of TnGaAs(P)/InP quantum wells as a function of the oxide stripe width.
10 10 6. Growth of InGaAs/AIGaAs strained MOWs We have described in the last interim report the use of InAlGaAs QWs for the fabrication of strained layer QW laser diodes. These preliminary results were very promising but a further improvement of the growth parameters was required. In figure 6.1. we show the variation of photoluminesence intensity with the growth temperature for InAlGaAs/AIGaAs quantum wells. It is clearly observed that an increasing temperature results in improved QW performances. Figure 6.2. shows some examples of photoluminescence spectra obtained on these samples. In the last report we have also described some promising results on InGaAs/AIGaAs MQW vertical optical modulators. One of the major remaining problems however was the high insertion loss of these modulators. Figure 6.3. shows the reflection characteristics at different applied voltages for a novel modulator structure. We observe that the insertion loss can be reduced below 2 db. The modulation is 6.4 db at a driving voltage of -10 V (see figure 6.4). 1 itenst iiazi.i -r A I.. o ,,,,,_ Q w growth temperature ( C) Figure 6.1. Variation of the photoluminescence intensity as a function of the growth temperature for InAlGaAs/AIGaAs quantum wells.
11 intensity (au.) 1.6 RE P t 1.2 TA AF~ S 0.4{ wavelength (nm) R (db) 0- - Figure 6.2. Examples of photolumninescence spectra of lnalgaas/aigaas strained quantum wells '-v to I D D50 wavelenglth (nm) 20V Figure 6.3. Reflection curve of a normally off modulator with low insertion loss.
12 12 R (V) / R(0), _".. u- - L.:.,OV II -2. '. -7 5V -3.\,\.4'-,I' -5-1, -4 6, \ 1 0 V -8 20V wavelength (nm) Figure 6.4. Modulation characteristic of a normally off modulator with low insertion loss. 7. Epitaxial Lift-Off (ELO) The work on epitaxial lift-off has progressed considerably. A basic issue is now the further consolidation of the basic technology. It has been shown in the last report that very low driving voltages can be obtained for a GaAs on lnp optical switching OEIC. During the last 6 months we have concentrated on optimizing further the basic technology. It has been shown that the high frequency characteristics are similar before and after epitaxial lift off (see figure 7.1). Much effort was put in the optimization of the bonding of ELO films onto polyimide layers on InP. It was shown that by using a proper bake-out step (at 150 'C) the bond strength could be drastically improved. Finally we have done some life-time measurements on GaAs MESFETs before and after lift-off. The initial results are very promising, as shown in figure 7.2.
13 13 T_ Sn" C.1t-A F RU~E FO~k "-.A P4FIFA ELO _vt-or~ s 45.O[45 02ATEI..rREO I8.OE OE+OE -2CTI..FREO 18.OE+O3 B Figure 7.1. High frequency behaviour of GaAs MFSFETs before and after ELO. S 2W ao00 24M T )ME W n) TT~ -iso LELO _Z51)ELO 'CA LeaIkoge Curent stab ility bef ore and after ELD Figure 7.2. Stability test of GaAs MESFETs before and after ELO.
14 14 6. Conclusion In this fifth report we have descibed some of our most recent results on the fabrication of novel optoelectronic devices. The work has progressed rapidely and some very new results have been obtained : heteroepitaxial GaAs on InP optical switching OEIC, SMG growth of InP materials, selective growth of lnp materials, high quality and low insertion loss InGaAs/AlGaAs asymmetric fabry-perot vertical modulators, improved material quality of InAlGaAs/A1GaAs QWs and the furhter optimization of the ELO technology (good high frequency behaviour, improved bonding and good stability). 15 references I. Pollentier, L. Buydens, P. Demeester, P. Van Daele, A. Enard, E. Lallier, G. Glastre and D. Rondi, "Monolithic integration of a GaAs MESFET and an lnp/ingaasp 2x2 optical switch", accepted for publication in El. Lett. L. Buydens, P. Demeester, P. Van Daele, "Asymmetric Fabry-Perot modulators with an InGaAs/AIGaAs active region", accepted for publication in Optical and Quantum Electronics. P. Demeester, G. Coudenys, G. Vermeire, Y. Zong-Qiang, I. Moerman, L. Buydens and P. Van Daele;" Novel growth techniques for the fabrication of Photonic integrated circuits" Invited paper to be presented at the MRS Fall meeting, Boston, dec 1991 L. Buydens, P. Demeester, Z. Yu, P. Van Daele; "-igh-contrast / Low-Voltage normally on InGaAs/AIGaAs asymmetric Fabry-Perot modulator", paper accepted for publication in Photonics Technology Letters.
64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array
64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 69 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array Roland Jäger and Christian Jung We have designed and fabricated
More informationLecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI
Lecture: Integration of silicon photonics with electronics Prepared by Jean-Marc FEDELI CEA-LETI Context The goal is to give optical functionalities to electronics integrated circuit (EIC) The objectives
More informationNovel Integrable Semiconductor Laser Diodes
Novel Integrable Semiconductor Laser Diodes J.J. Coleman University of Illinois 1998-1999 Distinguished Lecturer Series IEEE Lasers and Electro-Optics Society Definition of the Problem Why aren t conventional
More informationINCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS
INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS Koray Aydin, Marina S. Leite and Harry A. Atwater Thomas J. Watson Laboratories of Applied Physics, California
More informationHeterogeneous Integration of Silicon and AlGaInAs for a Silicon Evanescent Laser
Invited Paper Heterogeneous Integration of Silicon and AlGaInAs for a Silicon Evanescent Laser Alexander W. Fang a, Hyundai Park a, Richard Jones b, Oded Cohen c, Mario J. Paniccia b, and John E. Bowers
More informationRobert G. Hunsperger. Integrated Optics. Theory and Technology. Sixth Edition. 4ü Spri rineer g<
Robert G. Hunsperger Integrated Optics Theory and Technology Sixth Edition 4ü Spri rineer g< 1 Introduction 1 1.1 Advantages of Integrated Optics 2 1.1.1 Comparison of Optical Fibers with Other Interconnectors
More informationLow Thermal Resistance Flip-Chip Bonding of 850nm 2-D VCSEL Arrays Capable of 10 Gbit/s/ch Operation
Low Thermal Resistance Flip-Chip Bonding of 85nm -D VCSEL Arrays Capable of 1 Gbit/s/ch Operation Hendrik Roscher In 3, our well established technology of flip-chip mounted -D 85 nm backside-emitting VCSEL
More informationPhotonic Integrated Circuits Made in Berlin
Fraunhofer Heinrich Hertz Institute Photonic Integrated Circuits Made in Berlin Photonic integration Workshop, Columbia University, NYC October 2015 Moritz Baier, Francisco M. Soares, Norbert Grote Fraunhofer
More informationMonolithically integrated InGaAs nanowires on 3D. structured silicon-on-insulator as a new platform for. full optical links
Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links Hyunseok Kim 1, Alan C. Farrell 1, Pradeep Senanayake 1, Wook-Jae Lee 1,* & Diana.
More informationFabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes
Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes Abstract We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The
More informationHybrid vertical-cavity laser integration on silicon
Invited Paper Hybrid vertical-cavity laser integration on Emanuel P. Haglund* a, Sulakshna Kumari b,c, Johan S. Gustavsson a, Erik Haglund a, Gunther Roelkens b,c, Roel G. Baets b,c, and Anders Larsson
More informationSemiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I
Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I Prof. Utpal Das Professor, Department of lectrical ngineering, Laser Technology Program, Indian Institute
More informationHigh speed silicon-based optoelectronic devices Delphine Marris-Morini Institut d Electronique Fondamentale, Université Paris Sud
High speed silicon-based optoelectronic devices Delphine Marris-Morini Institut d Electronique Fondamentale, Université Paris Sud Data centers Optical telecommunications Environment Interconnects Silicon
More informationIntegration of Optoelectronic and RF Devices for Applications in Optical Interconnect and Wireless Communication
Integration of Optoelectronic and RF Devices for Applications in Optical Interconnect and Wireless Communication Zhaoran (Rena) Huang Assistant Professor Department of Electrical, Computer and System Engineering
More informationNOVEL CHIP GEOMETRIES FOR THz SCHOTTKY DIODES
Page 404 NOVEL CHIP GEOMETRIES FOR THz SCHOTTKY DIODES W. M. Kelly, Farran Technology Ltd., Cork, Ireland S. Mackenzie and P. Maaskant, National Microelectronics Research Centre, University College, Cork,
More informationResonant tunneling diode optoelectronic integrated circuits
Invited Paper Resonant tunneling diode optoelectronic integrated circuits C. N. Ironside a, J. M. L. Figueiredo b, B. Romeira b,t. J. Slight a, L. Wang a and E. Wasige a, a Department of Electronics and
More informationSilicon Photonics Photo-Detector Announcement. Mario Paniccia Intel Fellow Director, Photonics Technology Lab
Silicon Photonics Photo-Detector Announcement Mario Paniccia Intel Fellow Director, Photonics Technology Lab Agenda Intel s Silicon Photonics Research 40G Modulator Recap 40G Photodetector Announcement
More informationPhysics of Waveguide Photodetectors with Integrated Amplification
Physics of Waveguide Photodetectors with Integrated Amplification J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers Electrical and Computer Engineering Department University of California, Santa
More informationLaser Diode. Photonic Network By Dr. M H Zaidi
Laser Diode Light emitters are a key element in any fiber optic system. This component converts the electrical signal into a corresponding light signal that can be injected into the fiber. The light emitter
More informationDegradation analysis in asymmetric sampled grating distributed feedback laser diodes
Microelectronics Journal 8 (7) 74 74 www.elsevier.com/locate/mejo Degradation analysis in asymmetric sampled grating distributed feedback laser diodes Han Sung Joo, Sang-Wan Ryu, Jeha Kim, Ilgu Yun Semiconductor
More informationInP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
More informationExamination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade:
Examination Optoelectronic Communication Technology April, 26 Name: Student ID number: OCT : OCT 2: OCT 3: OCT 4: Total: Grade: Declaration of Consent I hereby agree to have my exam results published on
More informationSilicon-On-Insulator based guided wave optical clock distribution
Silicon-On-Insulator based guided wave optical clock distribution K. E. Moselund, P. Dainesi, and A. M. Ionescu Electronics Laboratory Swiss Federal Institute of Technology People and funding EPFL Project
More informationSilicon photonics integration roadmap for applications in computing systems
Silicon photonics integration roadmap for applications in computing systems Bert Jan Offrein Neuromorphic Devices and Systems Group 2016 IBM Corporation Outline Photonics and computing? The interconnect
More informationWavelength Selective Switch Using Arrayed Waveguides with Linearly Varying Refractive Index Distribution
Photonics Based on Wavelength Integration and Manipulation IPAP Books 2 (25) pp. 341 354 Wavelength Selective Switch Using Arrayed Waveguides with Linearly Varying Refractive Index Distribution Kazuhiko
More informationUltra-low voltage resonant tunnelling diode electroabsorption modulator
Ultra-low voltage resonant tunnelling diode electroabsorption modulator, 1/10 Ultra-low voltage resonant tunnelling diode electroabsorption modulator J. M. L. FIGUEIREDO Faculdade de Ciências e Tecnologia,
More informationLecture 4 INTEGRATED PHOTONICS
Lecture 4 INTEGRATED PHOTONICS What is photonics? Photonic applications use the photon in the same way that electronic applications use the electron. Devices that run on light have a number of advantages
More informationDesign and Simulation of N-Substrate Reverse Type Ingaasp/Inp Avalanche Photodiode
International Refereed Journal of Engineering and Science (IRJES) ISSN (Online) 2319-183X, (Print) 2319-1821 Volume 2, Issue 8 (August 2013), PP.34-39 Design and Simulation of N-Substrate Reverse Type
More informationECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016
ECEN689: Special Topics in Optical Interconnects Circuits and Systems Spring 2016 Lecture 10: Electroabsorption Modulator Transmitters Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements
More informationarxiv:physics/ v2 [physics.optics] 17 Mar 2005
Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a In- GaAs/AlAs resonant tunneling diode J. M. L. Figueiredo a), A. R. Boyd, C. R. Stanley, and C. N. Ironside Department
More informationElectrical Engineering and Computer Science, Seoul National University, Seoul , Republic of Korea; ABSTRACT 1. INTRODUCTION
Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility Seongjae Cho *a, Hyungjin Kim b, S. J. Ben Yoo c, Byung-Gook Park b, and James S. Harris, Jr. a a Department
More informationNear/Mid-Infrared Heterogeneous Si Photonics
PHOTONICS RESEARCH GROUP Near/Mid-Infrared Heterogeneous Si Photonics Zhechao Wang, PhD Photonics Research Group Ghent University / imec, Belgium ICSI-9, Montreal PHOTONICS RESEARCH GROUP 1 Outline Ge-on-Si
More informationIntegrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI
1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward
More informationVisible Superluminescent LEDs for Smart Lighting
Visible Superluminescent LEDs for Smart Lighting M. Duelk, M.Rossetti, A. Castiglia, M. Malinverni, N. Matuschek, C. Vélez EXALOS AG, 8952 Schlieren, Switzerland J.-F. Carlin, N. Grandjean Ecole Polytechnique
More informationInP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
More informationSelectively-undercut traveling-wave electroabsorption modulators incorporating a p-ingaas contact layer
Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-ingaas contact layer Matthew M. Dummer, James R. Raring, Jonathan Klamkin, Anna Tauke-Pedretti, and Larry A. Coldren University
More informationChapter 5 5.1 What are the factors that determine the thickness of a polystyrene waveguide formed by spinning a solution of dissolved polystyrene onto a substrate? density of polymer concentration of polymer
More informationQuantum-Well Semiconductor Saturable Absorber Mirror
Chapter 3 Quantum-Well Semiconductor Saturable Absorber Mirror The shallow modulation depth of quantum-dot saturable absorber is unfavorable to increasing pulse energy and peak power of Q-switched laser.
More informationSUPPLEMENTARY INFORMATION
Transfer printing stacked nanomembrane lasers on silicon Hongjun Yang 1,3, Deyin Zhao 1, Santhad Chuwongin 1, Jung-Hun Seo 2, Weiquan Yang 1, Yichen Shuai 1, Jesper Berggren 4, Mattias Hammar 4, Zhenqiang
More informationHigh-efficiency, high-speed VCSELs with deep oxidation layers
Manuscript for Review High-efficiency, high-speed VCSELs with deep oxidation layers Journal: Manuscript ID: Manuscript Type: Date Submitted by the Author: Complete List of Authors: Keywords: Electronics
More informationOptoelectronics ELEC-E3210
Optoelectronics ELEC-E3210 Lecture 4 Spring 2016 Outline 1 Lateral confinement: index and gain guiding 2 Surface emitting lasers 3 DFB, DBR, and C3 lasers 4 Quantum well lasers 5 Mode locking P. Bhattacharya:
More informationTis paper is part of the following report: UNCLASSIFIED UNCLASSIFIED
UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP013131 TITLE: Multiple-Barrier Resonant Tunneling Structures for Application in a Microwave Generator Stabilized by Microstrip
More informationSchool of Electrical and Computer Engineering, Cornell University. ECE 5330: Semiconductor Optoelectronics. Fall 2014
School of Electrical and Computer Engineering, Cornell University ECE 5330: Semiconductor Optoelectronics Fall 014 Homework 6 Due on Oct. 3, 014 Suggested Readings: i) Study lecture notes. Table of Parameter
More informationMonolithically Integrated Broadly Tunable Light Emitters Based On Selectively Intermixed Quantum Wells
University of Central Florida Electronic Theses and Dissertations Doctoral Dissertation (Open Access) Monolithically Integrated Broadly Tunable Light Emitters Based On Selectively Intermixed Quantum Wells
More informationAn electrically pumped germanium laser
An electrically pumped germanium laser The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation As Published Publisher Camacho-Aguilera,
More informationVertical Taper InGaAsP/InP Fabry-Perot Laser Diode for Injection-Locking Applications in WDM-PON Systems
International Journal of Electrical Engineering. ISSN 0974-2158 Volume 11, Number 1 (2018), pp. 131-148 International Research Publication House http://www.irphouse.com Vertical Taper InGaAsP/InP Fabry-Perot
More informationHIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS
HIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS J. Piprek, Y.-J. Chiu, S.-Z. Zhang (1), J. E. Bowers, C. Prott (2), and H. Hillmer (2) University of California, ECE Department, Santa Barbara, CA 93106
More informationHeinrich-Hertz-Institut Berlin
NOVEMBER 24-26, ECOLE POLYTECHNIQUE, PALAISEAU OPTICAL COUPLING OF SOI WAVEGUIDES AND III-V PHOTODETECTORS Ludwig Moerl Heinrich-Hertz-Institut Berlin Photonic Components Dept. Institute for Telecommunications,,
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature11293 1. Formation of (111)B polar surface on Si(111) for selective-area growth of InGaAs nanowires on Si. Conventional III-V nanowires (NWs) tend to grow in
More informationSemiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in semiconductor material Pumped now with high current density
More information(12) Patent Application Publication (10) Pub. No.: US 2004/ A1. Ironside et al. (43) Pub. Date: Dec. 9, 2004
US 2004O247218A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2004/0247218 A1 Ironside et al. (43) Pub. Date: Dec. 9, 2004 (54) OPTOELECTRONIC DEVICE Publication Classification
More informationWIDEBAND ELECTROABSORPTION MODULATOR FOR MICROWAVE PHOTONICS
AFRL-SN-RS-TR-2005-408 Final Technical Report December 2005 WIDEBAND ELECTROABSORPTION MODULATOR FOR MICROWAVE PHOTONICS University of California at San Diego APPROVED FOR PUBLIC RELEASE; DISTRIBUTION
More informationCONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
More informationOptoelectronic integrated circuits incorporating negative differential resistance devices
Optoelectronic integrated circuits incorporating negative differential resistance devices José Figueiredo Centro de Electrónica, Optoelectrónica e Telecomunicações Departamento de Física da Faculdade de
More informationSemiconductor Optical Active Devices for Photonic Networks
UDC 621.375.8:621.38:621.391.6 Semiconductor Optical Active Devices for Photonic Networks VKiyohide Wakao VHaruhisa Soda VYuji Kotaki (Manuscript received January 28, 1999) This paper describes recent
More informationExtended backside-illuminated InGaAs on GaAs IR detectors
Extended backside-illuminated InGaAs on GaAs IR detectors Joachim John a, Lars Zimmermann a, Patrick Merken a, Gustaaf Borghs a, Chris Van Hoof a Stefan Nemeth b, a Interuniversity MicroElectronics Center
More informationOptical Fiber Communication Lecture 11 Detectors
Optical Fiber Communication Lecture 11 Detectors Warriors of the Net Detector Technologies MSM (Metal Semiconductor Metal) PIN Layer Structure Semiinsulating GaAs Contact InGaAsP p 5x10 18 Absorption InGaAs
More informationHigh efficiency laser sources usable for single mode fiber coupling and frequency doubling
High efficiency laser sources usable for single mode fiber coupling and frequency doubling Patrick Friedmann, Jeanette Schleife, Jürgen Gilly and Márc T. Kelemen m2k-laser GmbH, Hermann-Mitsch-Str. 36a,
More informationHigh-Power Semiconductor Laser Amplifier for Free-Space Communication Systems
64 Annual report 1998, Dept. of Optoelectronics, University of Ulm High-Power Semiconductor Laser Amplifier for Free-Space Communication Systems G. Jost High-power semiconductor laser amplifiers are interesting
More informationPhotonics and Optical Communication
Photonics and Optical Communication (Course Number 300352) Spring 2007 Dr. Dietmar Knipp Assistant Professor of Electrical Engineering http://www.faculty.iu-bremen.de/dknipp/ 1 Photonics and Optical Communication
More informationHigh Speed pin Photodetector with Ultra-Wide Spectral Responses
High Speed pin Photodetector with Ultra-Wide Spectral Responses C. Tam, C-J Chiang, M. Cao, M. Chen, M. Wong, A. Vazquez, J. Poon, K. Aihara, A. Chen, J. Frei, C. D. Johns, Ibrahim Kimukin, Achyut K. Dutta
More informationFabrication of antenna integrated UTC-PDs as THz sources
Invited paper Fabrication of antenna integrated UTC-PDs as THz sources Siwei Sun 1, Tengyun Wang, Xiao xie 1, Lichen Zhang 1, Yuan Yao and Song Liang 1* 1 Key Laboratory of Semiconductor Materials Science,
More informationNew advances in silicon photonics Delphine Marris-Morini
New advances in silicon photonics Delphine Marris-Morini P. Brindel Alcatel-Lucent Bell Lab, Nozay, France New Advances in silicon photonics D. Marris-Morini, L. Virot*, D. Perez-Galacho, X. Le Roux, D.
More informationSUPPLEMENTARY INFORMATION
Room-temperature InP distributed feedback laser array directly grown on silicon Zhechao Wang, Bin Tian, Marianna Pantouvaki, Weiming Guo, Philippe Absil, Joris Van Campenhout, Clement Merckling and Dries
More informationHigh-Q Photonic Crystal Microcavities in InAsP/InGaAsP Multi-Quantum-Well Membranes
125 Chapter 3 High-Q Photonic Crystal Microcavities in InAsP/InGaAsP Multi-Quantum-Well Membranes 3.1 Introduction With the high-q photonic crystal microcavity designs of chapter 2 in hand, the next step
More informationINTEGRATED TRANSCEIVER CHIP APPLICATION IN FREE SPACE OPTICAL COMMUNICATION
AFRL-IF-RS-TR-2005-317 Final Technical Report September 2005 INTEGRATED TRANSCEIVER CHIP APPLICATION IN FREE SPACE OPTICAL COMMUNICATION APIC Corporation APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED.
More informationSilicon Photonics Technology Platform To Advance The Development Of Optical Interconnects
Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects By Mieke Van Bavel, science editor, imec, Belgium; Joris Van Campenhout, imec, Belgium; Wim Bogaerts, imec s associated
More informationOxide-Confined Laser Diodes With an Integrated Spot-Size Converter
1372 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 6, NOVEMBER/DECEMBER 2002 Oxide-Confined Laser Diodes With an Integrated Spot-Size Converter Kurt De Mesel, Member, IEEE, Steven
More informationOptical Interconnection in Silicon LSI
The Fifth Workshop on Nanoelectronics for Tera-bit Information Processing, 1 st Century COE, Hiroshima University Optical Interconnection in Silicon LSI Shin Yokoyama, Yuichiro Tanushi, and Masato Suzuki
More informationSi and InP Integration in the HELIOS project
Si and InP Integration in the HELIOS project J.M. Fedeli CEA-LETI, Grenoble ( France) ECOC 2009 1 Basic information about HELIOS HELIOS photonics ELectronics functional Integration on CMOS www.helios-project.eu
More informationNanophotonics: Single-nanowire electrically driven lasers
Nanophotonics: Single-nanowire electrically driven lasers Ivan Stepanov June 19, 2010 Single crystaline nanowires have unique optic and electronic properties and their potential use in novel photonic and
More informationUltra High-Speed InGaAs Nano-HEMTs
Ultra High-Speed InGaAs Nano-HEMTs 2003. 10. 14 Kwang-Seok Seo School of Electrical Eng. and Computer Sci. Seoul National Univ., Korea Contents Introduction to InGaAsNano-HEMTs Nano Patterning Process
More informationQuasi-Phase-Matched Faraday Rotation in Semiconductor Waveguides with a Magneto-Optic Cladding for Monolithically Integrated Optical Isolators
Quasi-Phase-Matched Faraday Rotation in Semiconductor Waveguides with a Magneto-Optic Cladding for Monolithically Integrated Optical Isolators Prof. David C. Hutchings, Barry M. Holmes and Cui Zhang, Acknowledgements
More informationSemiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in semiconductor material Pumped now with high current density
More informationUltralow voltage resonant tunnelling diode electroabsorption modulator
journal of modern optics, 2002, vol. 49, no. 5/6, 939±945 Ultralow voltage resonant tunnelling diode electroabsorption modulator J. M. L. FIGUEIREDO* Faculdade de Cieà ncias e Tecnologia, Universidade
More informationGaN: Applications: Optoelectronics
GaN: Applications: Optoelectronics GaN: Applications: Optoelectronics - The GaN LED industry is >10 billion $ today. - Other optoelectronic applications of GaN include blue lasers and UV emitters and detectors.
More informationPerformance Characterization of a GaAs Based 1550 nm Ga In N As 0.89 Sb 0.08 MQW VCSEL
Performance Characterization of a GaAs Based 1550 nm Ga 0.591 In 0.409 N 0.028 As 0.89 Sb 0.08 MQW VCSEL Md. Asifur Rahman, Md. Rabiul Karim, Jobaida Akhtar, Mohammad Istiaque Reja * Department of Electrical
More informationRecent Advances in photonic devices for Analog Fiber Link: Modulator Technologies
Networking the World TM ecent Advances in photonic devices for Analog Fiber Link: Modulator Technologies P. K. L. Yu, X.B. Xie*, G. E. Betts**, I. Shubin, Clint Novotny***, Jeff Bloch, W. S. C. Chang Department
More informationHigh brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh, C. Panja, P.T. Rudy, T. Stakelon and J.E.
QPC Lasers, Inc. 2007 SPIE Photonics West Paper: Mon Jan 22, 2007, 1:20 pm, LASE Conference 6456, Session 3 High brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh,
More informationWaveguide-Integrated Optical Antenna nanoleds for On-Chip Communication
Waveguide-Integrated Optical Antenna nanoleds for On-Chip Communication Michael Eggleston, Kevin Messer, Seth Fortuna, Eli Yablonovitch, Ming C. Wu Department of Electrical Engineering and Computer Sciences
More informationGetty Images. Advances in integrating directbandgap. semiconductors on silicon could help drive silicon photonics forward.
Getty Images Advances in integrating directbandgap III-V semiconductors on silicon could help drive silicon photonics forward. 32 OPTICS & PHOTONICS NEWS MARCH 2017 Sed min cullor si deresequi rempos magnis
More informationSUPPLEMENTARY INFORMATION
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si Authors: Yi Sun 1,2, Kun Zhou 1, Qian Sun 1 *, Jianping Liu 1, Meixin Feng 1, Zengcheng Li 1, Yu Zhou 1, Liqun
More informationLecture 6 Fiber Optical Communication Lecture 6, Slide 1
Lecture 6 Optical transmitters Photon processes in light matter interaction Lasers Lasing conditions The rate equations CW operation Modulation response Noise Light emitting diodes (LED) Power Modulation
More informationSri vidya college of Engineering & Technology OED QUESTION Bank UNIT - 5
UNIT V OPTOELECTRONIC INTEGRATED CIRCUITS PART A 1. What are the other sources to produce dispersion? The spectral spread of the light source and improper shaping of refractive index profile create dispersion
More informationLight Sources, Modulation, Transmitters and Receivers
Optical Fibres and Telecommunications Light Sources, Modulation, Transmitters and Receivers Introduction Previous section looked at Fibres. How is light generated in the first place? How is light modulated?
More informationThree-guide Coupled Rectangular Ring Lasers with Total Internal Reflection Mirrors
Three-guide Coupled Rectangular Ring Lasers with Total Internal Reflection Mirrors Doo Gun Kim *1, Woon Kyung Choi 1, In-Il Jung 1, Geum-Yoon Oh 1, Young Wan Choi 1, Jong Chang Yi 2, and Nadir Dagli 3
More informationContinuous wave operation of quantum cascade lasers above room temperature
Invited Paper Continuous wave operation of quantum cascade lasers above room temperature Mattias Beck *a, Daniel Hofstetter a,thierryaellen a,richardmaulini a,jérômefaist a,emiliogini b a Institute of
More informationGraphene electro-optic modulator with 30 GHz bandwidth
Graphene electro-optic modulator with 30 GHz bandwidth Christopher T. Phare 1, Yoon-Ho Daniel Lee 1, Jaime Cardenas 1, and Michal Lipson 1,2,* 1School of Electrical and Computer Engineering, Cornell University,
More informationLecture 1: Course Overview. Rajeev J. Ram
Lecture 1: Course Overview Rajeev J. Ram Office: 36-491 Telephone: X3-4182 Email: rajeev@mit.edu Syllabus Basic concepts Advanced concepts Background: p-n junctions Photodetectors Modulators Optical amplifiers
More informationA Low-loss Integrated Beam Combiner based on Polarization Multiplexing
MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com A Low-loss Integrated Beam Combiner based on Polarization Multiplexing Wang, B.; Kojima, K.; Koike-Akino, T.; Parsons, K.; Nishikawa, S.; Yagyu,
More informationAdvanced semiconductor lasers
Advanced semiconductor lasers Quantum cascade lasers Single mode lasers DFBs, VCSELs, etc. Quantum cascade laser Reminder: Semiconductor laser diodes Conventional semiconductor laser CB diode laser: material
More informationImproved Output Performance of High-Power VCSELs
Improved Output Performance of High-Power VCSELs 15 Improved Output Performance of High-Power VCSELs Michael Miller This paper reports on state-of-the-art single device high-power vertical-cavity surfaceemitting
More informationReview of Semiconductor Physics
Review of Semiconductor Physics k B 1.38 u 10 23 JK -1 a) Energy level diagrams showing the excitation of an electron from the valence band to the conduction band. The resultant free electron can freely
More informationLuminous Equivalent of Radiation
Intensity vs λ Luminous Equivalent of Radiation When the spectral power (p(λ) for GaP-ZnO diode has a peak at 0.69µm) is combined with the eye-sensitivity curve a peak response at 0.65µm is obtained with
More informationPerformance of silicon micro ring modulator with an interleaved p-n junction for optical interconnects
Indian Journal of Pure & Applied Physics Vol. 55, May 2017, pp. 363-367 Performance of silicon micro ring modulator with an interleaved p-n junction for optical interconnects Priyanka Goyal* & Gurjit Kaur
More informationVertical Cavity Surface Emitting Laser (VCSEL) Technology
Vertical Cavity Surface Emitting Laser (VCSEL) Technology Gary W. Weasel, Jr. (gww44@msstate.edu) ECE 6853, Section 01 Dr. Raymond Winton Abstract Vertical Cavity Surface Emitting Laser technology, typically
More informationRecent Progress of High Power Semiconductor Lasers for EDFA Pumping
Recent Progress of High Power Semiconductor Lasers for EDFA Pumping by Akihiko Kasukawa *, Toshikazu Mukaihara *, Takeharu Yamaguchi * and Jun'jiro Kikawa * Optical fiber communication systems using a
More informationSpontaneous Hyper Emission: Title of Talk
Spontaneous Hyper Emission: Title of Talk Enhanced Light Emission by Optical Antennas Ming C. Wu University of California, Berkeley A Science & Technology Center Where Our Paths Crossed Page Nanopatch
More informationVCSELs for gas sensing
Long-wavelength VCSELs for gas sensing A. Sirbu*, A.Caliman *, V.Iakovlev ", A. Mereuta *, G. Suruceanu " and E. Kapon *" * Laboratory of Physics of Nanostructures, EPFL, 1015 Lausanne, Switzerland " BeamExpress,
More informationIntroduction Fundamentals of laser Types of lasers Semiconductor lasers
ECE 5368 Introduction Fundamentals of laser Types of lasers Semiconductor lasers Introduction Fundamentals of laser Types of lasers Semiconductor lasers How many types of lasers? Many many depending on
More information