Laser and System Technologies for Access and Datacom
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1 Laser and System Technologies for Access and Datacom Anders Larsson Photonics Laboratory Department of Microtechnology and Nanoscience (MC2) Chalmers University of Technology SSF Electronics and Photonics Conference May 9-10, 2011
2 Outline Background and motivation Objectives and goals Partners, organization and tasks Results and achievements Industrial collaboration and exploitation
3 Background and motivation Need for much higher communication and interconnect capacity at the lower levels of the network Reduced power consumption Reduced cost m Access networks m SM fiber Local area networks 100 m 1300 nm Storage area networks MM fiber High performance computing 850 nm 100 m Optical interconnects (board, module, chip) Consumer electronics 10 m 10 Gbps (2009) 25 Gbps (2012) 40 Gbps (2015) 100 Gbps (2020)
4 Objectives and goals Objectives To develop new laser and system technologies for a significantly increased data throughput and efficiency of short to medium distance optical links Goals GaAs-based 850 nm multimode VCSELs for direct binary (OOK) modulation at 40 Gbps GaAs-based 1300 nm single-mode VCSELs for direct binary (OOK) modulation at 25 Gbps New modulation formats for extending the link reach and capacity towards 100 Gbps Vertical Cavity Surface Emitting Laser (VCSEL) mirror (p-type) oxide aperture gain region (MQW) mirror (n-type) Low drive current (a few ma) Low output power (a few mw) High efficiency (up to 60%) Low divergence, circular beam High speed modulation at low currents Low manufacturing cost (on-wafer testing) Array integration (1D and 2D) substrate
5 Partners, organization and tasks Partners Optoelectronics Group, Chalmers University of Technology (Anders Larsson) Semiconductor Materials Group, Royal Institute of Technology (Mattias Hammar) Optical Communications Group, Chalmers University of Technology (Peter Andrekson) TE Connectivity (Olof Sahlén) Ericsson (Arne Alping) Work packages Short wavelength (850 nm) MM-VCSELs (Anders Larsson) Long wavelength (1300 nm) SM-VCSELs (Mattias Hammar) Modulation formats, electronic compensation and system evaluation (Peter Andrekson)
6 Short wavelength (850 nm) MM-VCSELs (1) Target performance Emission wavelength nm (high speed MMF) Modulation speed 25 Gbps (year 2), 40 Gbps (year 5) Operating temperature 85 C Design for high speed and high efficiency Strained InGaAs/AlGaAs quantum wells (high differential gain) SCH for fast carrier capture (low gain compression) Reduced photon lifetime (low damping) Graded interfaces and modulation doping in mirrors (low resistance) Multiple oxide layers, undoped substrate, BCB under bond pad (low capacitance) Binary compound (AlAs) in bottom mirror (low thermal impedance) phase of reflection adjusted for optimum photon lifetime p-contact strained InGaAs/AlGaAs QWs BCB low resistance p-dbr multiple oxide layers high thermal conductance n-dbr n-contact undoped substrate
7 Short wavelength (850 nm) MM-VCSELs (2) Performance Low threshold current (0.4 ma) High differential efficiency (1.0 W/A) 23 GHz modulation bandwidth 40 Gbps transmission over 1 m MMF@ 25 C 35 Gbps transmission over 100 m MMF@ 25 C 25 Gbps transmission over 100 m 85 C Inner oxide aperture = 7 µm 1 m OM3+ fiber 450 fj per bit First datacom VCSEL to transmit at 40 Gbps 100 m OM3+ fiber Record modulation bandwidth (23 GHz)
8 Long wavelength (1300 nm) SM-VCSELs (1) Target performance Emission wavelength nm Output power 2 mw Modulation speed 12.5 Gbps (year 2), 25 Gbps (year 5) Operating temperature 85 C New concept for electrical and optical confinement Design for long wavelength single-mode emission and high speed Strained InGaAs/GaAs quantum wells (high differential gain) Large negative gain-cavity detuning (to approach 1300 nm) Epitaxial regrowth process for current and optical confinement Single-mode emission enforced by shallow intra-cavity pattern
9 Long wavelength (1300 nm) SM-VCSELs (2) Performance 8 mw multimode power 1 mw single mode power 10 Gbps transmission over 5 km 25 C Multimode VCSEL (6 µm aperture) Output power (mw) 6 5 C 5 5 C C C Current (ma) Voltage (V) Output power (mw) Relative intensity (db) Single-mode VCSEL (4 µm aperture) 5 C 5 C 85 C 85 C Current (ma) 10 ma 8 ma 6 ma 4 ma Voltage (V) Wavelength (nm)
10 Advanced modulation formats (1) Multilevel modulation formats for improved capacity and reach of intensity modulation/direct detection (IM/DD) links Improved spectral efficiency Increased requirements on laser linearity and noise Trade-off between capacity/reach and complexity/power consumption Single cycle subcarrier modulation (SCM) 16-QAM, 4 bits per symbol 10 Gbaud = subcarrier frequency (10 GHz) 40 Gbps transmission 20 GHz bandwidth 850 nm MM-VCSEL 200 m OM3+ fiber (23 GHz bandwidth) Back-to-back 200 m MMF VCSEL bandwidth Extended reach compared to OOK-NRZ modulation RF signal spectrum
11 Advanced modulation formats (2) 4-level pulse amplitude modulation (4-PAM) Record performance 4-PAM VCSELbased IM/DD link 4 levels, 2 bits per symbol 15 Gbaud 30 Gbps transmission 16 GHz bandwidth 850 nm MM-VCSEL 200 m OM3+ fiber (23 GHz bandwidth) Back-to-back 100 m MMF 200 m MMF Extended reach compared to OOK-NRZ modulation Low system complexity (low cost, low power consumption)
12 Publications, presentations and patents 13 journal papers (4 invited) 15 conference presentations (6 invited) 1 licentiate thesis (Petter Westbergh) 2 patent applications
13 Acknowledgment Optoelectronics Group, Chalmers Johan Gustavsson Åsa Haglund Benjamin Kögel Petter Westbergh Erik Haglund Prashant Baveja (Univ. of Rochester) Semiconductor Materials Group, KTH Mattias Hammar Xingang Yu Yu Xiang Jesper Berggren Optical Communications Group, Chalmers Peter Andrekson Magnus Karlsson Krzysztof Szczerba Ericsson Arne Alping Bengt-Erik Olsson A. Rhodin A. Kristiansson Department of Signals and Systems, Chalmers Johnny Karout Erik Agrell IQE Europe (UK) Andrew Joel Tyndall Institute (Ireland) Eoin O Reilly Sorcha Healy Technical University of Berlin (Germany) Dieter Bimberg Alex Mutig Alexey Nadtochiy Friedhelm Hopfer Gerrit Fiol Cambridge University (UK) Jonathan Ingham Richard Penty Ian White TE Connectivity Olof Sahlén Nicholae Chitica
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