In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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1 Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of or use Instead of sales.addresses@ or sales.addresses@ use salesaddresses@nexperia.com ( ) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

2 PESDxVUF; PESDxVUG; PESDxVUW Very low capacitance unidirectional quadruple ESD protection diode arrays Rev January 2008 Product data sheet. Product profile. General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table. Product overview Type number Package Package configuration NXP JEITA JEDEC SOT886 - MO-22 leadless ultra small SOT886 - MO-22 leadless ultra small PESD3V3VUG SOT33 SC-88A - very small SOT33 SC-88A - very small SOT ultra small and flat lead SOT ultra small and flat lead.2 Features ESD protection of up to four lines Very low diode capacitance Max. peak pulse power: P PP =6W Low clamping voltage: V CL =V Ultra low leakage current: I RM =2nA ESD protection up to 2 kv IEC ; level (ESD) IEC (surge); I PP =. A.3 Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics Subscriber Identity Module (SIM) card protection

3 . Quick reference data 2. Pinning information Table 2. Quick reference data T amb =2 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode V RWM reverse standoff voltage PESD3V3VUG V C d diode capacitance f = MHz; V R =0V PESD3V3VUG V - 8 pf - 2 pf Table 3. Pinning Pin Description Simplified outline Symbol ; cathode (diode ) 2 common anode cathode (diode 2) 2 cathode (diode 3) 3 common anode 6 cathode (diode ) 6 bottom view 006aaa6 6 PESD3V3VUG; cathode (diode ) 2 common anode 3 cathode (diode 2) cathode (diode 3) cathode (diode ) aaa7 ; cathode (diode ) 2 common anode 3 cathode (diode 2) cathode (diode 3) cathode (diode ) aaa7 Product data sheet Rev January of 6

4 3. Ordering information. Marking Table. Ordering information Type number Package Name Description Version XSON6 plastic extremely thin small outline package; SOT886 PESD3V3VUG SC-88A no leads; 6 terminals; body. 0. mm plastic surface-mounted package; leads SOT33 - plastic surface-mounted package; leads SOT66. Limiting values Table. Marking codes Type number Marking code [] A7 A8 PESD3V3VUG V* V2* W W2 [] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 603). Symbol Parameter Conditions Min Max Unit Per diode P PP peak pulse power t p = 8/20 µs [][2][3] - 6 W I PP peak pulse current t p = 8/20 µs [][2][3] -. A Per device T j junction temperature - 0 C T amb ambient temperature 6 +0 C T stg storage temperature 6 +0 C [] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC [2] For PESDxVUF measured from pin, 3, or 6 to pin 2 or. [3] For PESDxVUG and PESDxVUW measured from pin, 3, or to pin 2. Product data sheet Rev January of 6

5 Table 7. ESD maximum ratings T amb =2 C unless otherwise specified. Symbol Parameter Conditions Min Max Unit Per diode V ESD electrostatic discharge voltage IEC [][2][3] - 2 kv (contact discharge) MIL-STD-883 (human body model) - 0 kv [] Device stressed with ten non-repetitive ESD pulses. [2] For PESDxVUF measured from pin, 3, or 6 to pin 2 or. [3] For PESDxVUG and PESDxVUW measured from pin, 3, or to pin 2. Table 8. ESD standards compliance Standard Per diode IEC ; level (ESD) MIL-STD-883; class 3 (human body model) Conditions > 8 kv (contact) > kv 00aaa aaa630 I PP 00 % I PP (%) 00 % I PP ; 8 µs 90 % 80 e t 0 % I PP ; 20 µs 0 0 % t (µs) t r = 0.7 ns to ns 30 ns 60 ns t Fig. 8/20 µs pulse waveform according to IEC Fig 2. ESD pulse waveform according to IEC Product data sheet Rev January 2008 of 6

6 6. Characteristics Table 9. Characteristics T amb =2 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode V RWM reverse standoff voltage PESD3V3VUG V I RM reverse leakage current PESD3V3VUG V BR breakdown voltage I R =ma PESD3V3VUG V V RWM = 3.3 V na V RWM =.0 V na V V C d diode capacitance f=mhz PESD3V3VUG V R = 0 V - 8 pf PESD3V3VUG V R = 3.3 V pf V R = 0 V - 2 pf V R = V pf Product data sheet Rev January 2008 of 6

7 Table 9. Characteristics continued T amb =2 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V CL clamping voltage [][2][3] PESD3V3VUG I PP = A V PESD3V3VUG r dif differential resistance I R =ma PESD3V3VUG I PP = 2 A - - V I PP = A - - V I PP =.7 A V Ω Ω [] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC [2] For PESDxVUF measured from pin, 3, or 6 to pin 2 or. [3] For PESDxVUG and PESDxVUW measured from pin, 3, or to pin aaa aaa633 P PP P PP (W) P PP(2 C) t p (µs) T j ( C) T amb =2 C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig. Relative variation of peak pulse power as a function of junction temperature; typical values Product data sheet Rev January of 6

8 6 006aaa aaa263 C d (pf) I RM I RM(2 C) 2 0 () 8 (2) V R (V) T j ( C) f = MHz; T amb =2 C () ; PESD3V3VUG; (2) ; ; Fig. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values I V CL V BR V RWM I RM I R V + P-N I PP 006aaa07 Fig 7. V-I characteristics for a unidirectional ESD protection diode Product data sheet Rev January of 6

9 ESD TESTER C Z R Z IEC network C Z = 0 pf; R Z = 330 Ω DUT Device Under Test 0 Ω RG 223/U 0 Ω coax 0 ATTENUATOR GHz DIGITAL OSCILLOSCOPE 0 Ω vertical scale = 200 V/div horizontal scale = 0 ns/div vertical scale = V/div horizontal scale = 0 ns/div /G/W GND /G/W GND GND unclamped + kv ESD voltage waveform (IEC network) clamped + kv ESD voltage waveform (IEC network) GND GND vertical scale = 200 V/div horizontal scale = 0 ns/div vertical scale = V/div horizontal scale = 0 ns/div unclamped kv ESD voltage waveform (IEC network) clamped kv ESD voltage waveform (IEC network) 006aab2 Fig 8. ESD clamping test setup and waveforms Product data sheet Rev January of 6

10 7. Application information The devices are designed for the protection of up to four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. The devices provide a surge capability of 6 W per line for an 8/20 µs waveform each. data- or transmission lines DUT DUT 2 n.c unidirectional protection of lines bidirectional protection of 3 lines 006aab26 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended:. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum.. Avoid running protected conductors in parallel with unprotected conductors.. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. Product data sheet Rev January of 6

11 8. Package outline max 0.0 max Dimensions in mm Dimensions in mm 0--6 Fig 0. Package outline PESDxVUF (SOT886) Fig. Package outline PESDxVUG (SOT33) Dimensions in mm Fig 2. Package outline PESDxVUW (SOT66) Product data sheet Rev January of 6

12 9. Packing information Table 0. Packing methods The indicated -xxx are the last three digits of the 2NC ordering code. [] Type number Package Description Packing quantity SOT886 mm pitch, 8 mm tape and reel; T [2] mm pitch, 8 mm tape and reel; T [3] SOT886 mm pitch, 8 mm tape and reel; T [2] mm pitch, 8 mm tape and reel; T [3] PESD3V3VUG SOT33 mm pitch, 8 mm tape and reel; T [2] mm pitch, 8 mm tape and reel; T2 [] SOT33 mm pitch, 8 mm tape and reel; T [2] mm pitch, 8 mm tape and reel; T2 [] SOT66 2 mm pitch, 8 mm tape and reel mm pitch, 8 mm tape and reel SOT66 2 mm pitch, 8 mm tape and reel mm pitch, 8 mm tape and reel [] For further information and the availability of packing methods, see Section 3. [2] T: normal taping [3] T: 90 rotated reverse taping [] T2: reverse taping 0. Soldering (6 ) (6 ) solder lands solder paste occupied area 0.32 (6 ) 0.2 (6 ) Dimensions in mm sot886_fr Reflow soldering is the only recommended soldering method. Fig 3. Reflow soldering footprint PESDxVUF (SOT886) Product data sheet Rev January 2008 of 6

13 ( ) ( ) solder lands solder paste solder resist occupied area Dimensions in mm 0.0 ( ) sot33_fr Fig. Reflow soldering footprint PESDxVUG (SOT33/SC-88A) solder lands solder resist. 3.7 transport direction during soldering occupied area Dimensions in mm Fig. Wave soldering footprint PESDxVUG (SOT33/SC-88A) Product data sheet Rev January of 6

14 (2x) 0.70 (2 ) 0. (2 ) 0.0 ( ) (2 ) solder lands solder resist placement area occupied area Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 6. Reflow soldering footprint PESDxVUW (SOT66) Product data sheet Rev January of 6

15 . Revision history Table. Revision history Document ID Release date Data sheet status Change notice Supersedes Product data sheet - PESDXVUG_SER_2 PESDXVUW_SER_ Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type numbers and added Table Product overview : added Figure 7: added Section 9 Packing information : added Section 0 Soldering : added Section 2 Legal information : updated PESDXVUG_SER_ Product data sheet - PESDXVUG_SER_ PESDXVUW_SER_ Product data sheet - - Product data sheet Rev January 2008 of 6

16 2. Legal information 2. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 2.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 603) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 2. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 3. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com Product data sheet Rev January 2008 of 6

17 . Contents Product profile General description Features Applications Quick reference data Pinning information Ordering information Marking Limiting values Characteristics Application information Package outline Packing information Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 28 January 2008 Document identifier:

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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