M74HC4051TTR SINGLE 8-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER

Transcription

1 SINGLE 8-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER LOW POWER DISSIPATION: I CC =4µA(MAX.) at T A =25 C LOGIC LEVEL TRANSLATION TO ENABLE 5V LOGIC SIGNAL TO COMMUNICATE WITH ±5V ANALOG SIGNAL LOW ON RESISTANCE: 70Ω TYP. (V CC -V EE = 4.5V) 50Ω TYP. (V CC -V EE = 9V) WIDE ANALOG INPUT VOLTAGE RANGE: ±6V FAST SWITCHING: t pd = 15ns (TYP.) at T A =25 C LOW CROSSTALK BETWEEN SWITCHES HIGH ON/OFF OUTPUT VOLTAGE RATIO WIDE OPERATING SUPPLY VOLTAGE RANGE (V CC -V EE ) = 2V TO 12V LOW SINE WAVE DISTORTION: 0.02% at V CC -V EE =9V HIGH NOISE IMMUNITY: V NIH =V NIL =28%V CC (MIN.) PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 4051 DESCRIPTION The M74HC4051 is a single eight-channel analog MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate C 2 MOS technology and it is pin to pin compatible with the equivalent metal gate CMOS4000B series. PIN CONNECTION AND IEC LOGIC SYMBOLS DIP ORDER CODES SOP TSSOP PACKAGE TUBE T & R DIP M74HC4051B1R SOP M74HC4051M1R M74HC4051RM13TR TSSOP M74HC4051TTR It contains 8 bidirectional and digitally controlled analog switches. A built-in level shifting is included to allow an input range up to ±6V (peak) for an analog signal with digital control signal of 0 to 6V. V EE supply pin is provided for analog input signals. It has an inhibit (INH) input terminal to disable all the switches when is at high level. For operation as a digital multiplexer/demultiplexer, V EE is connected to GND. A, B and C control inputs select one channel out of eight. All inputs are equipped with protection circuits against static discharge and transient excess voltage. July /12

2 CONTROL INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 3 COM Common Output/Input OUT/IN 6 INH INHIBIT Input 7 V EE Negative Supply Voltage 11, 10, 9 A, B, C Select Inputs 13, 14, 15, 12, 1, 5, 2, 4 0 to 7 Independent Input/Outputs 8 GND Ground (0V) 16 V CC Positive Supply Voltage I/O EQUIVALENT CIRCUIT TRUTH TABLE INPUT STATE ON CHANNEL INH C B A L L L L 0 L L L H 1 L L H L 2 L L H H 3 L H L L 4 L H L H 5 L H H L 6 L H H H 7 H X X X NONE X: Don t care FUNCTIONAL DIAGRAM 2/12

3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CC Supply Voltage -0.5 to +7 V V CC - V EE Supply Voltage -0.5 to +13 V V I Control Input Voltage -0.5 to V CC V V I/O Switch I/O Voltage V EE -0.5 to V CC V I CK Control Input Diode Current ± 20 ma I IOK I/O Diode Current ± 20 ma I T Switch Through Current ± 25 ma I CC or I GND DC V CC or Ground Current ± 50 ma P D Power Dissipation 500(*) mw T stg Storage Temperature -65 to +150 C T L Lead Temperature (10 sec) 300 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 C; derate to 300mW by 10mW/ C from 65 C to85 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V CC Supply Voltage 2to6 V V EE Supply Voltage -6 to 0 V V CC -V EE Supply Voltage 2to12 V V I Input Voltage 0 to V CC V V I/O I/O Voltage V EE to V CC V T op Operating Temperature -55 to 125 C t r,t f V CC = 4.5V 0 to 500 Input Rise and Fall Time V CC = 2.0V 0 to 1000 V CC = 6.0V 0 to 400 ns 3/12

4 DC SPECIFICATIONS Test Condition Value Symbol V IHC V ILC Parameter High Level Input Voltage Low Level Input Voltage V CC V EE T A =25 C -40 to 85 C -55 to 125 C Min. Typ. Max. Min. Max. Min. Max R ON ON Resistance GND V I =V IHC or V ILC V I/O =V CC to V EE I I/O 2mA GND 150 VI =V IHC or V 4.5 GND ILC V I/O =V CC or V EE I I/O 2mA R ON Difference of ON 4.5 GND V I =V IHC or V ILC Resistance V I/O =V CC or V EE between switches I I/O 2mA I OFF Input/Output 6.0 GND V OS =V CC or ±0.06 ± 0.6 ± 1.2 Leakage Current GND ± 0.1 ± 1 ± 2 (SWITCH OFF) V IS = GND or V CC V I =V ILC or V IHC I IZ Switch Input 6.0 GND V OS =V CC or ±0.06 ± 0.6 ± 1.2 Leakage Current GND ± 0.1 ± 1 ± 2 (SWITCH ON, V I =V IHC or V ILC OUTPUT OPEN) I I I CC Input Leakage Current Quiescent Supply Current 6.0 GND V I =V CC or GND ± 0.1 ± 0.1 ± GND VI =V CC or GND Unit V V Ω Ω µa µa µa µa 4/12

5 AC ELECTRICAL CHARACTERISTICS (C L = 50 pf, Input t r =t f = 6ns) Test Condition Value Symbol Parameter V CC V EE T A =25 C -40 to 85 C -55 to 125 C Min. Typ. Max. Min. Max. Min. Max. Unit Φ I/O t PZL t PZH t PLZ t PHZ Phase Difference Between Input and Output Output Enable Time Output Disable Time 2.0 GND GND GND GND GND R L =1KΩ 6.0 GND GND GND R L =1KΩ 6.0 GND ns ns ns CAPACITIVE CHARACTERISTICS Test Condition Value Symbol Parameter V CC V EE T A =25 C -40 to 85 C -55 to 125 C Min. Typ. Max. Min. Max. Min. Max. C IN Input Capacitance pf C I/O C I/O C IOS C PD Common Terminal Capacitance Switch Terminal Capacitance Feed Through Capacitance Power Dissipation Capacitance (note 1) pf pf pf 5.0 GND 70 pf 1) C PD is defined as the value of the IC s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I CC(opr) =C PD xv CC xf IN +I CC Unit 5/12

6 ANALOG SWITCH CHARACTERISTICS (GND = 0V; T A =25 C) Symbol Parameter Test Condition Value Unit f MAX f MAX Sine Wave Distortion Frequency Response (Switch ON) (*) Frequency Response (Switch ON) (**) Feed through Attenuation (Switch OFF) Crosstalk (Control Input to Signal Output) Crosstalk (between any two Switches) V CC V EE V IN (V p-p ) (*) Input COMMON Terminal, and measured at SWITCH Terminal (**) Input SWITCH Terminal, and measured at common Terminal NOTE: These characteristics are determined by the design of the device. Typ f IN = 1 KHz R L =10KΩC L =50pF Adjust f IN voltage to obtain 0 dbm at V OS Increase f IN Frequency until db meter reads -3dB R L =50Ω,C L =10pF,f IN = 1KHz sine wave Adjust f IN voltage to obtain 0 dbm at V OS Increase f IN Frequency until db meter reads -3dB R L =50Ω,C L =10pF,f IN = 1KHz sine wave V IN is centered at (V CC -V EE )/ Adjust input for 0 dbm R L = 600Ω, C L =50pF,f IN = 1KHz sine wave Adjust R L at set up so that I S = 0A R L = 600Ω, C L =50pF,f IN = 1KHz square wave Adjust V IN to obtain 0dBm at input R L = 600Ω, C L =50pF,f IN = 1KHz sine wave % MHz MHz db mv db 6/12

7 SWITCHING CARACTERISTICS TEST CIRCUIT CROSSTALK (control to output) BANDWIDTH AND FEEDTHROUGH ATTENUATION CROSSTALK BETWEEN ANY TWO SWITCHES 7/12

8 SWITCHING CHARACTERISTICS WAVEFORM CHANNEL RESISTANCE (R ON) I CC (Opr.) 8/12

9 Plastic DIP-16 (0.25) MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. a B b b D E e e F I L Z P001C 9/12

10 SO-16 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A a a b b C c1 45 (typ.) D E e e F G L M S 8 (max.) PO13H 10/12

11 TSSOP16 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A b c D E E e 0.65 BSC BSC K L A A2 A1 b e c K L E D E1 PIN 1 IDENTIFICATION D 11/12

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