Pm39LV512 / Pm39LV010

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1 512 Kbit / 1Mbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.7 V V Memory Organization - Pm39LV512: 64K x 8 (512 Kbit) - Pm39LV010: 128K x 8 (1 Mbit) High Performance Read - 70 ns access time - For Pm39LV512 temp. -40 o C~+85 0 C : 70ns temp. +85 o C~+125 o C : 90ns Cost Effective Secr Architecture - Uniform 4 Kbyte secrs Aumatic Erase and Byte Program - Build-in aumatic program verification - Max 40 µs/byte programming time - Typical 55 ms secr/chip erase time Low Power Consumption - Typical 4 ma active read current - Typical 8 ma program/erase current - Typical 0.1 µa CMOS standby current - For Pm39LV512 only temp. +85 o C~+125 o C, support 20uA (max). Data# Polling and Toggle Bit Features Program/Erase support in 0 o C~+125 o C. Hardware Data Protection High Product Endurance - Guarantee 100,000 program/erase cycles per single secr - Minimum 20 years data retention - For Pm39LV512 temp. +85 o C~+125 o C, support 10,000 program/erase cycles. Industrial Standard Pin-out and Packaging - 32-pin VSOP (TSOP 8 mm x 14 mm) - 32-pin PLCC -Optional Halogen-Free package GENERAL DESCRIPTION The Pm39LV512/010 are 512 Kbit/1 Mbit 3.0 Volt-only Flash Memories. These devices are designed use a single low voltage, range from 2.7 Volt 3.6 Volt, power supply perform read, erase and program operations. The Volt V PP power supply for program and erase operations are not required. The devices can be programmed in standard EPROM programmers as well. The memory arrays of Pm39LV512/010 are divided in uniform 4 Kbyte secrs for data or code srage. The secr erase feature allows users flexibly erase a secr without affecting the data in others. The chip erase feature allows the whole memory array be erased in one single erase operation. The devices can be programmed on a byte-by-byte basis after performing the erase operation. The devices have a standard microprocessor interface as well as a JEDEC standard pin-out/command set. The program operation is executed by issuing the program command code in command register. The internal control logic aumatically handles the programming voltage ramp-up and timing. The erase operation is executed by issuing the chip erase, or secr erase command code in command register. The internal control logic aumatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions, the progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or the Toggle Bit on I/O6. The Pm39LV512/010 are manufactured on pflash s advanced nonvolatile CMOS technology. The devices are offered in 32-pin VSOP (TSOP 8 mm x 14 mm) and PLCC packages with access time of 70 ns. Chingis Technology Corporation 1 Issue Date: April, 2009 Rev:1.8

2 CONNECTION DIAGRAMS A12 A15 NC V CC NC 39LV010 39LV A7 A A14 A14 A A13 A13 A A8 A8 A A9 A9 A A11 A11 A A A10 A10 A I/O I/O7 I/O7 I/O1 I/O1 I/O2 I/O2 GND GND I/O3 I/O3 I/O4 I/O4 I/O5 I/O5 I/O6 I/O6 39LV512 39LV010 A12 A15 A16 NC NC V CC NC 39LV512 39LV010 A6 A5 A4 A3 A2 A1 A0 I/O0 39LV010 39LV Pin PLCC 39LV010 A11 A9 A8 A13 A14 NC V CC NC A16 A15 A12 A7 A6 A5 A4 39LV512 A11 A9 A8 A13 A14 NC V CC NC NC A15 A12 A7 A6 A5 A LV512 39LV010 A10 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 A10 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 32-Pin VSOP Chingis Technology Corporation 2

3 PRODUCT ORDERING INFORMATION Pm39LVxxx -70 J C E EnviromentAttribute E=Halogen-free package Blank= standard package Temperature Range C = Commercial (-40 C +85 C) Package Type J = 32-pin Plastic J-Leaded Chip Carrier (32J) V = 32-pin Thin Small Outline Package (TSOP 8 mm x 14 mm)(32v) W= Know Good Die Speed Option -70 = 70ns Device Number Pm39LV512 (512 Kbit) Pm39LV010 (1 Mbit) Part Number t ACC (ns) Package Temperature range PM39LV512-70JCE PM39LV512-70JC 32J PM39LV512-70VCE PM39LV512-70VC 32V PM39LV010-70JCE Commercial 70 32J PM39LV010-70JC (-40 o C +85 o C) PM39LV010-70VCE PM39LV010-70VC 32V PM39LV512-70WC PM39LV010-70WC Know Good Die Chingis Technology Corporation 3

4 PIN DESCRIPTIONS SYMBOL TYPE DESCRIPTION A0 - A MS (1) INPUT INPUT Address Inputs: For memory addresses input. Addresses are internally latched on the falling edge of during a write cycle. Chip Enable: goes low activates the device's internal circuitries for device operation. goes high deselects the device and switches in standby mode reduce the power consumption. INPUT Write Enable: Activate the device for write operation. is active low. I/O0 - I/O7 INPUT INPUT/ OUTPUT Output Enable: Control the device's output buffers during a read cycle. is active low. Data Inputs/Outputs: Input command/data during a write cycle or output data during a read cycle. The I/O pins float tri-state when are disabled. V CC Device Power Supply GND Ground NC No Connection Note: 1. A MS is the most significant address where A MS = A15 for Pm39LV512, and A16 for Pm39LV010. Chingis Technology Corporation 4

5 BLOCK DIAGRAM ERASE/PROGRAM VOLTAGE GENERATOR I/O0-I/O7 I/O BUFFERS HIGH VOLTAGE SWITCH COMMAND REGISTER CE,OE LOGIC DATA LATCH SENSE AMP A0-A MS ADDRESS LATCH Y-DECODER X-DECODER Y-GATING MEMORY ARRAY DEVICE OPERATION READ OPERATION The access of Pm39LV512/010 are similar EPROM. To read data, three control functions must be satisfied: is the chip enable and should be pulled low ( V IL ). is the output enable and should be pulled low ( V IL ). is the write enable and should remains high ( V IH ). PRODUCT IDENTIFICATION The product identification mode can be used identify the manufacturer and the device through hardware or software read ID operation. See Table 1 for pflash Manufacturer ID and Device ID. The hardware ID mode is activated by applying a 12.0 Volt on A9 pin, typically used by an external programmer for selecting the right programming algorithm for the devices. Refer Table 2 for Bus Operation Modes. The software ID mode is activated by a three-bus-cycle command. See Table 3 for Software Command Definition. BYTE PROGRAMMING The programming is a four-bus-cycle operation and the data is programmed in the devices ( a logical 0 ) on a byte-by-byte basis. See Table 3 for Software Command Definition. A program operation is activated by writing the three-byte command sequence followed by program address and one byte of program data in the devices. The addresses are latched on the falling edge of or whichever occurs later, and the data are latched on the rising edge of or whichever occurs first. The internal control logic aumatically handles the internal programming voltages and timing. The Pm39LV512/010 have built-in aumatic program verification function achieve higher product endurance - greater than 100,000 program/erase cycles for every single secr. A data 0 can not be programmed back a 1. Only erase operation can convert the 0 s 1 s. The Data# Polling on I/O7 or Toggle Bit on I/O6 can be used detect the progress or completion of a program cycle. Chingis Technology Corporation 5

6 DEVICE OPERATION (CONTINUED) CHIP ERASE The entire memory array can be erased through a chip erase operation. Pre-programs the devices are not required prior a chip erase operation. Chip erase starts immediately after a six-bus-cycle chip erase command sequence. All commands will be ignored once the chip erase operation has started. The devices will return standby mode after the completion of chip erase. SECTOR ERASE HARDWARE DATA PROTECTION Hardware data protection protects the devices from unintentional erase or program operation. It is performed in the following ways: (a) V CC sense: if V CC is below 1.8 V (typical), the write operation is inhibited. (b) Write inhibit: holding any of the signal low, high, or high inhibits a write cycle. (c) Noise filter: pulses of less than 5 ns (typical) on the or input will not initiate a write operation. The memory array of Pm39LV512/010 are organized in uniform 4 Kbyte secrs. A secr erase operation allows erase any individual secr without affecting the data in others. The secr erase operation is similar chip erase. I/O7 DATA# POLLING The Pm39LV512/010 provide a Data# Polling feature indicate the progress or completion of a program and erase cycles. During a program cycle, an attempt read the devices will result in the complement of the last loaded data on I/O7. Once the program operation is completed, the true data of the last loaded data is valid on all outputs. During a secr, or chip erase cycle, an attempt read the device will result a 0 on I/O7. After the erase operation is completed, an attempt read the device will result a 1 on I/O7. Table 1. Product Identification Product Identification Data Manufacturer ID 9Dh Device ID: Pm39LV512 1Bh Pm39LV010 1Ch I/O6 TOGGLE BIT The Pm39LV512/010 also provide a Toggle Bit feature detect the progress or completion of a program and erase cycles. During a program or erase cycle, an attempt read data from the device will result a ggling between 1 and 0 on I/O6. When the program or erase operation is complete, I/O6 will sp ggling and valid data will be read. Toggle bit may be accessed at any time during a program or erase cycle. Chingis Technology Corporation 6

7 SECTOR ADDRESS TABLE Memory Density Secr Secr Size (Kbytes) Address Range Secr h - 00FFFh 512Kbit Secr h - 01FFFh : : : 1 Mbit Secr F000h - 0FFFFh Secr h - 10FFFh Secr h - 11FFFh : : : Secr F000h - 1FFFFh Chingis Technology Corporation 7

8 OPERATING MODES Table 2. Bus Operation Modes Mode ADDRESS I/O Read V IL V IL V IH X (1) D OUT Write V IL V IH V IL X D IN Standby V IH X X X High Z Output Disable X V IH X X High Z Product Identification Hardware V IL V IL V IH A2 - A MS (2) = X, A9 = V H (3), A1 = V IL, A0 = V IL A2 - A MS (2) = X, A9 = V H (3), A1 = V IL, A0 = V IH Manufacturer ID Device ID Notes: 1. X can be V IL, V IH or addresses. 2. A MS = Most significant address; A MS = A15 for Pm39LV512, and A16 for Pm39LV V H = 12.0 V ± 0.5 V. COMMAND DEFINITION Table 3. Software Command Definition Command Sequence Bus Cycle 1st Bus Cycle Addr Data 2nd Bus Cycle Addr Data 3rd Bus Cycle Addr Data 4th Bus Cycle Addr Data 5th Bus Cylce Addr Data 6th Bus Cycle Addr Data Read 1 Addr D OUT Chip Erase 6 555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h 555h 10h Secr Erase 6 555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h SA (1) 30h Byte Program 4 555h AAh 2AAh 55h 555h A0h Addr D IN Product ID Entry 3 555h AAh 2AAh 55h 555h 90h Product ID Exit (2) 3 555h AAh 2AAh 55h 555h F0h Product ID Exit (2) 1 XXXh F0h Notes: 1. SA = Secr address of the secr be erased. 2. Either one of the Product ID Exit command can be used. Chingis Technology Corporation 8

9 DEVICE OPERATIONS FLOWCHARTS AUTOMATIC PROGRAMMING Start Load Data AAh Address 555H Load Data 55h Address 2AAh Address Increment Load Data A0h Load Program Data Program Address I/O7 = Data? or I/O6 Sp Toggle? No Yes No Last Address? Yes Programming Completed Chart 1. Aumatic Programming Flowchart Chingis Technology Corporation 9

10 DEVICE OPERATIONS FLOWCHARTS (CONTINUED) AUTOMATIC ERASE Start Write Secr, or Chip Erase Command No Data = FFh? or I/O6 Sp Toggle? Yes Erasure Completed CHIP ERASE COMMAND Load Data AAh SECTOR ERASE COMMAND Load Data AAh Load Data 55h Address 2AAh Load Data 55h Address 2AAh Load Data 80h Load Data 80h Load Data AAh Load Data AAh Load Data 55h Address 2AAh Load Data 55h Address 2AAh Load Data 10h Load Data 30h SA Chart 2. Aumatic Erase Flowchart Chingis Technology Corporation 10

11 DEVICE OPERATIONS FLOWCHARTS (CONTINUED) SOFTWARE PRODUCT IDENTIFICATION ENTRY SOFTWARE PRODUCT IDENTIFICATION EXIT Load Data AAh Load Data AAh Load Data 55h Address 2AAh Load Data 90h Load Data 55h Address 2AAh Load Data F0h or Load Data F0h Address XXXh Exit Product Identification Mode (3) Enter Product Identification Mode (1,2) Exit Product Identification Mode (3) Notes: 1. The device will enter Product Identification mode after excuting the Product ID Entry command. 2. Under Product Identification mode, the Manufacturer ID and Device ID of devices can be read at address X0000h and X0001h where X = Don t Care. 3. The device returns standby operation. Chart 3. Software Product Identification Entry/Exit Flowchart Chingis Technology Corporation 11

12 ABSOLUTE MAXIMUM RATINGS (1) Temperature Under Bias Srage Temperature Surface Mount Lead Soldering Temperature Input Voltage with Respect Ground on All Pins except A9 pin (2) Input Voltage with Respect Ground on A9 pin (3) All Output Voltage with Respect Ground V CC (2) -65 o C +125 o C -65 o C +125 o C 240 o C 3 Seconds -0.5 V V CC V -0.5 V V -0.5 V V CC V -0.5 V +6.0 V Notes: 1. Stresses under those listed in Absolute Maximum Ratings may cause permanent damage the device. This is a stress rating only. The functional operation of the device or any other conditions under those indicated in the operational sections of this specification is not implied. Exposure absolute maximum rating condition for extended periods may affected device reliability. 2. Maximum DC voltage on input or I/O pins are V CC V. During voltage transitioning period, input or I/O pins may overshoot V CC V for a period of time up 20 ns. Minimum DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period, input or I/O pins may undershoot GND -2.0 V for a period of time up 20 ns. 3. Maximum DC voltage on A9 pin is V. During voltage transitioning period, A9 pin may overshoot V for a period of time up 20 ns. Minimum DC voltage on A9 pin is -0.5 V. During voltage transitioning period, A9 pin may undershoot GND -2.0 V for a period of time up 20 ns. DC AND AC OPERATING RANGE Part Number Operating Temperature Vcc Power Supply Pm39LV512/ o +85 o C 2.7 V V Chingis Technology Corporation 12

13 DC CHARACTERISTICS Symbol Parameter Condition Min Typ Max Units ILI Input Load Current VIN= 0 V V CC 1 ma ILO Output Leakage Current VI/O = 0 V V CC 1 ma ISB1 VCC Standby Current CMOS, = V CC -0.3 V ma ISB2 VCC Standby Current TTL = VIH VCC ma ICC1 VCC Active Read Current f = 5 MHz; IOUT = 0 ma 4 15 ma ICC2 (1) VCC Program/Erase Current 8 20 ma VIL Input Low Voltage V VIH Input High Voltage 0.7 VCC VCC V VOL Output Low Voltage IOL = 2.1 ma; VCC = VCC min 0.45 V VOH Output High Voltage IOH = -100 ma; VCC = VCC min VCC V Note: 1. Characterized but not 100% tested. AC CHARACTERISTICS READ OPERATIONS CHARACTERISTICS Symbol Parameter PM39LV PM39LV Units Min Max t RC Read Cycle Time 70 ns t ACC Address Output Delay 70 ns t CE Output Delay 70 ns t OE Output Delay 35 ns t DF or Output High Z 0 25 ns t OH Output Hold from, or Address, whichever occured first 0 ns t VCS VCC Set-up Time 50 ms Chingis Technology Corporation 13

14 AC CHARACTERISTICS (CONTINUED) READ OPERATIONS AC WAVEFORMS t RC ADDRESS ADDRESS VALID t ACC t CE t OE tdf OUTPUT HIGH Z t OH OUTPUT VALID t VCS V CC OUTPUT TEST LOAD 3.3 V INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL 1.8 K 1.3 K OUTPUT PIN 30 pf (for 55 ns) 100 pf (for 70 ns) 3.0 V Input 0.0 V 1.5 V AC Measurement Level PIN CAPACITANCE ( f = 1 MHz, T = 25 C ) Typ Max Units Conditions C IN 4 6 pf V IN = 0 V C OUT 8 12 pf V OUT = 0 V Note: These parameters are characterized but not 100% tested. Chingis Technology Corporation 14

15 AC CHARACTERISTICS (CONTINUED) WRITE (PROGRAM/ERASE) OPERATIONS CHARACTERISTICS Pm39LV Symbol Parameter Pm39LV Units Min Max twc Write Cycle Time 70 ns tas Address Set-up Time 0 ns tah Address Hold Time 30 ns tcs and Set-up Time 0 ns tch and Hold Time 0 ns toeh High Hold Time 10 ns tds Data Set-up Time 40 ns tdh Data Hold Time 0 ns twp Write Pulse Width 35 ns twph Write Pulse Width High 20 ns tbp Byte Programming Time 40 ms tec Chip or Block Erase Time 100 ms tvcs VCC Set-up Time 50 ms PROGRAM OPERATIONS AC WAVEFORMS - CONTROLLED Program Cycle t VCS t CH t CS t WP t WPH t BP t AS t AH A0 - A MS 555 2AA 555 ADDRESS t WC t DS t DH DATA IN AA 55 A0 INPUT DATA VALID DATA V CC Chingis Technology Corporation 15

16 AC CHARACTERISTICS (CONTINUED) PROGRAM OPERATIONS AC WAVEFORMS - CONTROLLED Program Cycle t VCS t CH t CS t WP t WPH t BP t AS t AH A0 - A MS 555 2AA 555 ADDRESS t WC t DS t DH DATA IN AA 55 A0 INPUT DATA VALID DATA V CC CHIP ERASE OPERATIONS AC WAVEFORMS t VCS t WP t WPH AO - A MS DATA IN t AS tah t DH 555 2AA AA 555 t WC t DS AA AA t EC V CC Chingis Technology Corporation 16

17 AC CHARACTERISTICS (CONTINUED) SECTOR ERASE OPERATIONS AC WAVEFORMS t VCS t WP t WPH AO - A MS DATA IN t AS tah t DH 555 2AA AA Secr Address t WC t DS AA AA t EC V CC TOGGLE BIT AC WAVEFORMS t OEH t DF t OE t OH I/O6 DATA TOGGLE TOGGLE STOP TOGGLING VALID DATA Note: Toggling,, or both and will operate Toggle Bit. Chingis Technology Corporation 17

18 AC CHARACTERISTICS (CONTINUED) DATA# POLLING AC WAVEFORMS t CH t CE t OEH t OE t DF I/O7 I/O7# t OH VALID DATA Note: Toggling,, or both and will operate Data# Polling. PROGRAM/ERASE PERFORMANCE Parameter Unit Typ Max Remarks Secr Erase Time ms From writing erase command erase completion Block Erase Time ms From writing erase command erase completion Chip Erase Time ms From writing erase command erase completion Byte Programming Time us 40 Excludes the time of four-cycle program command execution Note: These parameters are characterized but not 100% tested. RELIABILITY CHARACTERISTICS Parameter Min Typ Unit Test Method Endurance 100,000 Cycles JEDEC Standard A117 Data Rentention 20 Years JEDEC Standard A103 ESD- Human Body Model 2000 >4000 Volts JEDEC Standard A114 ESD-Machine Model 200 >400 Volts JEDEC Standard A115 ESD - Charged Device Model 1000 Volts JEDEC Standard C101-A Latch-Up I CC1 ma JEDEC Standard 78 Note: These parameters are characterized but not 100% tested. Chingis Technology Corporation 18

19 PACKAGE TYPE INFORMATION 32J 32-Pin Plastic Leaded Chip Carrier Dimensions in Inches (Millimeters).485(12.32).495(12.51).447(11.35).453(11.51) (14.86).595(15.11).547(13.89).553(14.05) Pin 1 I.D. SEATING PLANE.123(3.12).140(3.56).076(1.93).095(2.41).013(.33).021(.53).400 REF..510(12.95).530(13.46) 025(.635)X30.026(.66).032(.81).050 REF. 32V 32-Pin Thin Small Outline Package (TSOP 8 mm x 14 mm)( measure in millimeters) Pin 1 I.D..037(.95).041( (.16).011(,27).315(7.90).319(8.10).020(0.5) BSC.484(12.30).492(12.50).543(13.80).560(14.20).020(0.5).006(.15).047(1.20) MAX.010(.25) (.10).008(.20).020(.50).028(.70) Chingis Technology Corporation 19

20 REVISION HISTORY Date Revision No. Description of C hanges Page N o. July, New publication All Sep, tds from 40ns 30ns 15 Add PM 39LV WC part number 3 M o d ify t h e p F L A S H L o g o is te a d o f P M C All April, A d d P b-free p art nu m ber 3 R em ov e -5 5 part nu m ber 1, 3, 15 En du rance from 5 0 K 10 0K 1 Jun, Temperature range change (-40 o C~85 o C) 3,12 N ov, Correct the byte program time max : 40us 1, 15, 18 N ov, C orrect the Access tem p eratu re (-4 0 o C~85 o C) 1 M arch, M odify the pin w idth in 32V. 19 A p ril, A d d th e H alog en-free pack age 3 Chingis Technology Corporation 20

IS39LV040 / IS39LV010 / IS39LV512

IS39LV040 / IS39LV010 / IS39LV512 4Mbit / 1Mbit / 512 Kbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V Memory Organization - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K