NCP1250. Current-Mode PWM Controller for Off-line Power Supplies

Size: px
Start display at page:

Download "NCP1250. Current-Mode PWM Controller for Off-line Power Supplies"

Transcription

1 Current-Mode PWM Controller for Off-line Power Supplies The NCP50 is a highly integrated PWM controller capable of delivering a rugged and high performance offline power supply in a tiny TSOP 6 or PDIP 8 package. With a supply range up to 8 V, the controller hosts a jittered 65 khz or 00 khz switching circuitry operated in peak current mode control. When the power on the secondary side starts to decrease, the controller automatically folds back its switching frequency down to a minimum level of 6 khz. As the power further goes down, the part enters skip cycle while limiting the peak current. Over Power Protection (OPP) is a difficult exercise especially when no load standby requirements drive the converter specifications. The ON proprietary integrated OPP lets you harness the maximum delivered power without affecting your standby performance simply via two external resistors. An Over Voltage Protection input is also combined on the same pin and protects the whole circuitry in case of optocoupler failure or adverse open loop operation. Finally, a timer based short circuit protection offers the best protection scheme, letting you precisely select the protection trip point irrespective of a loose coupling between the auxiliary and the power windings. Features Fixed Frequency 65 or 00 khz Current Mode Control Operation Internal and Adjustable Over Power Protection (OPP) Circuit Frequency Foldback Down to 6 khz and Skip Cycle in Light Load Conditions Internal Ramp Compensation Internal Fixed 4 ms Soft Start 00 ms Timer Based Auto Recovery Short Circuit Protection Frequency Jittering in Normal and Frequency Foldback Modes Option for Auto Recovery or Latched Short Circuit Protection OVP Input for Improved Robustness Up to 8 V V CC Operation +300 ma/ 500 ma Source/Sink Drive Capability Less than 00 mw Standby Power at High Line EPS.0 Compliant These are Pb Free Devices Typical Applications ac dc Converters for TVs, Set top Boxes and Printers Offline Adapters for Notebooks and Netbooks GND FB TSOP 6 (SOT3 6) SN SUFFIX CASE 38G PIN CONNECTIONS DRV OPP/Latch 3 4 CS TSOP 6 (Top View) 6 MARKING DIAGRAMS (Note: Microdot may be in either location) 5 V CC 5xAYW 5x = Specific Device Code x = A,, C, D, 0, y = A or B A = Assembly Location WL = Wafer Lot Y, YY = Year W, WW = Work Week G or = Pb Free Package GND DRV N/C V CC 3 PDIP 8 SUFFIX P Case PDIP 8 (Top View) 5xy65 AWL YYWWG OPP/LATCH N/C FB CS ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 05 April, 05 Rev. 0 Publication Order Number: NCP50/D

2 Vbulk. Vout OVP. OPP. NCP ramp comp. Figure. Typical Application Example (TSOP 6) PIN DESCRIPTION PDIP 8 Pin N TSSOP 6 Pin Name Function Pin Description GND The controller ground. 6 FB Feedback pin Hooking an optocoupler collector to this pin will allow regulation. 8 3 OPP/OVP Adjust the Over Power Protection Latches off the part 5 4 CS Current sense + ramp compensation A resistive divider from the auxiliary winding to this pin sets the OPP compensation level. When brought above 3 V, the part is fully latched off. This pin monitors the primary peak current but also offers a means to introduce ramp compensation. 4 5 V CC Supplies the controller This pin is connected to an external auxiliary voltage and supplies the controller. 6 DRV Driver output The driver s output to an external MOSFET gate. OPTIONS Controller Frequency OCP Latched OCP Auto Recovery NCP50ASN65TG 65 khz Yes No NCP50BSN65TG 65 khz No Yes NCP50ASN00TG 00 khz Yes No NCP50BSN00TG 00 khz No Yes NCP50BP65G 65 khz No Yes

3 ORDERING INFORMATION Device Package Marking OCP Protection Switching Frequency Package Shipping NCP50ASN65TG 5A Latch 65 khz TSOP 6 (Pb Free) NCP50BSN65TG 5 Autorecovery 65 khz NCP50ASN00TG 5C Latch 00 khz NCP50BSN00TG 5D Autorecovery 00 khz NCP50BP65G 50B65 Autorecovery 65 khz PDIP 8 (Pb Free) 3000 / Tape & Reel 50 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. OPP Vcc and logic management UVLO Vlatch OVP gone? 600 ns time constant Up counter RST 4 vdd power on reset hiccup IpFlag vdd S R Q Q us blanking Rlim Iscr Vcc Frequency modulation Power on reset khz clock Clamp S Q Q R Frequency foldback Drv Vfold Vskip vdd Rramp The soft start is activated during: 4 ms SS IpFlag RFB / 4. the startup sequence the auto recovery burst mode FB VFB <.05 V? setpoint = 50 mv CS LEB 50 mv peak current freeze VOPP + Vlimit + VOPP GND Vlimit Figure. Internal Circuit Architecture 3

4 MAXIMUM RATINGS TABLE Symbol Rating Value Unit V CC Power Supply voltage, V CC pin, continuous voltage 8 V V DRVtran Maximum DRV pin voltage when DRV in H state, transient voltage (Note ) V CC V Maximum voltage on low power pins CS, FB and OPP 0.3 to 0 V IOPP Maximum injected negative current into the OPP pin ma I SCR Maximum continuous current in to the V CC Pin while in latched mode 3 ma R JA Thermal Resistance Junction to Air 360 C/W T J,max Maximum Junction Temperature 50 C Storage Temperature Range 60 to +50 C ESD Capability, Human Body Model (HBM), all pins kv ESD Capability, Machine Model (MM) 00 V ESD Capability, Charged Device Model (CDM) kv Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. The transient voltage is a voltage spike injected to DRV pin being in high state. Maximum transient duration is 00 ns.. This device series contains ESD protection and exceeds the following tests: Human Body Model 000 V per JESD, Method A4E. Machine Model Method 00 V per JESD, Method A5A. Charged Device Model per JEDEC Standard JESD C0D 3. This device contains latch up protection and exceeds 00 ma per JEDEC Standard JESD78. 4

5 ELECTRICAL CHARACTERISTICS (For typical values T J = 5 C, for min/max values T J = 40 C to +5 C, Max T J = 50 C, V CC = V unless otherwise noted) Symbol Rating Min Typ Max Unit SUPPLY SECTION (For the best efficiency performance, we recommend a V CC below 0 V) VCC ON V CC increasing level at which driving pulses are authorized V VCC (min) V CC decreasing level at which driving pulses are stopped V VCC HYST Hysteresis VCC ON VCC (min) 6.0 V V ZENER Clamped V CC when latched off / burst mode I CC = 500 A 7.0 V ICC Start up current 5 A ICC Internal IC consumption with I FB = 50 A, F SW = 65 khz and C L = 0 nf.4. ma ICC3 Internal IC consumption with I FB = 50 A, F SW = 65 khz and C L = nf. 3.0 ma ICC Internal IC consumption with I FB = 50 A, F SW = 00 khz and C L = 0 nf.7.5 ma ICC3 Internal IC consumption with I FB = 50 A, F SW = 00 khz and C L = nf ma ICC LATCH Current flowing into V CC pin that keeps the controller latched (Note 4) T J = 40 C to +5 C T J = 0 C to +5 C ICCstby Internal IC consumption while in skip cycle (V CC = V, driving a typical 6 A/600 V MOS- FET) 40 3 A 550 A R lim Current limit resistor in series with the latch SCR 4.0 k DRIVE OUTPUT T r Output voltage rise C L = nf, 0 90% of output signal 40 ns T f Output voltage fall C L = nf, 0 90% of output signal 30 ns R OH Source resistance 3 R OL Sink resistance 6.0 I source Peak source current, V GS = 0 V (Note 5) 300 ma I sink Peak sink current, V GS = V (Note 5) 500 ma V DRVlow DRV pin level at V CC close to VCC (min) with a 33 k resistor to GND 8.0 V V DRVhigh DRV pin level at V CC = 8 V DRV unloaded 0 4 V CURRENT COMPARATOR I IB Input Bias 0.8 V input level on CS Pin 0.0 A V Limit Maximum internal current setpoint T J = 5 C OPP/Latch Pin grounded V V Limit Maximum internal current setpoint T J = 40 C to 5 C OPP/Latch Pin grounded V V fold Default internal voltage set point for frequency foldback trip point 45% of V limit 357 mv V freeze Internal peak current setpoint freeze ( 3% of V limit ) 50 mv T DEL Propagation delay from current detection to gate off state ns T LEB Leading Edge Blanking Duration 300 ns TSS Internal soft start duration activated upon startup, auto recovery 4.0 ms IOPPo Setpoint decrease for the OPP/Latch pin biased to 50 mv (Note 6) 3.3 % IOOPv Voltage setpoint for the OPP/Latch pin biased to 50 mv (Note 6), T J = 5 C V IOOPv Voltage setpoint for the OPP/Latch pin biased to 50 mv (Note 6), T J = 40 C to 5 C V IOPPs Setpoint decrease for the OPP/Latch pin grounded 0 % INTERNAL OSCILLATOR f OSC Oscillation frequency (65 khz version) khz f OSC Oscillation frequency (00 khz version) khz 5

6 ELECTRICAL CHARACTERISTICS (continued) (For typical values T J = 5 C, for min/max values T J = 40 C to +5 C, Max T J = 50 C, V CC = V unless otherwise noted) Symbol Rating INTERNAL OSCILLATOR D max Maximum duty cycle % f jitter Frequency jittering in percentage of f OSC ±5 % f swing Swing frequency 40 Hz FEEDBACK SECTION R up Internal pull up resistor 0 k R eq Equivalent ac resistor from FB to GND 6 k I ratio FB Pin to current setpoint division ratio 4. V freeze Feedback voltage below which the peak current is frozen.05 V FREQUENCY FOLDBACK V fold Frequency folback level on the feedback pin 45% of maximum peak current.5 V F trans Transition frequency below which skip cycle occurs 6 30 khz V fold,end End of frequency foldback feedback leve, F sw = F min 350 mv V skip Skip cycle level voltage on the feedback pin 300 mv Skip hysteresis Hysteresis on the skip comparator (Note 5) 30 mv INTERNAL SLOPE COMPENSATION V ramp Internal ramp 5 C (Note 7).5 V R ramp Internal ramp resistance to CS pin 0 k PROTECTIONS V latch Latching level input V T latch blank Blanking time after drive turn off.0 s T latch count Number of clock cycles before latch confirmation 4.0 T latch del OVP detection time constant 600 ns Timer Internal auto recovery fault timer duration ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. For design robustness, we recommend to inject 60 A as a minimum at the lowest input line voltage. 5. Guaranteed by design 6. See characterization table for linearity over negative bias voltage 7. A M resistor is connected from OPP/Latch Pin to the ground for the measurement. Min Typ Max Unit 6

7 TYPICAL CHARACTERISTICS D max (%) F SW (khz) Figure Figure F trans (khz) F _swing (Hz) Figure 5. Figure 6. V limit (mv) Figure 7. V Lskip (mv) 490 F SW = 65 khz Figure 8. 7

8 TYPICAL CHARACTERISTICS IOOP O (%) 34 9 IOOP V (V) Figure Figure V CC(ON) (V) V CC(min) (V) Figure. Figure V CC(Hyst) (V) I CC ( A) Figure 3. Figure 4. 8

9 TYPICAL CHARACTERISTICS F SW = 65 khz.5 F SW = 65 khz.5 I CC (ma) I CC3 (ma) Figure 5. Figure V zener (V) I CCLatch ( A) Figure 7. Figure T leb (V) Req (k ) Figure 9. Figure 0. 9

10 TYPICAL CHARACTERISTICS Iratio ( ) V latch (V) Figure. Figure t rise (ns) t fall (ns) Figure 3. Figure R ol ( ) R oh ( ) Figure 5. Figure 6. 0

11 TYPICAL CHARACTERISTICS V ovp_del ( s) V drv_low (V) Figure 7. Figure 8. V drv_high (V) Figure 9. T SS (ms) Figure V fold(fb) (V) V fold(cs) (mv) Figure 3. Figure 3.

12 TYPICAL CHARACTERISTICS V fold_end (V) V skip (mv) Figure 33. Figure V freeze (mv) V freeze(fb) (V) Figure 35. Figure TIMER (ms) 30 0 I CC (ma) F SW = 65 khz Figure 37. ADAPTER OUTPUT CURRENT (A) Figure 38. Controller Consumption vs. Adapter Output Current

13 APPLICATION INFORMATION Introduction The NCP50 implements a standard current mode architecture where the switch off event is dictated by the peak current setpoint. This component represents the ideal candidate where low part count and cost effectiveness are the key parameters, particularly in low cost ac dc adapters, open frame power supplies etc. Capitalizing on the NCP0X series success, the NCP50 packs all the necessary components normally needed in today modern power supply designs, bringing several enhancements such as a non dissipative OPP. Current mode operation with internal ramp compensation: Implementing peak current mode control at a fixed 65 khz or 00 khz, the NCP50 offers an internal ramp compensation signal that can easily by summed with the sensed current. Sub harmonic oscillations are eliminated via the inclusion of a single resistor in series with the current sense information. Internal OPP: By routing a portion of the negative voltage present during the on time on the auxiliary winding to the dedicated OPP pin, the user has a simple and non dissipative means to alter the maximum peak current setpoint as the bulk voltage increases. If the pin is grounded, no OPP compensation occurs. If the pin receives a negative voltage down to 50 mv, then a peak current reduction down to 3.3% typical can be achieved. For an improved performance, the maximum voltage excursion on the sense resistor is limited to 0.8 V. Low startup current: Achieving a low no load standby power always represents a difficult exercise when the controller draws a significant amount of current during start up. Due to its proprietary architecture, the NCP50 is guaranteed to draw less than 5 A typical, easing the design of low standby power adapters. EMI jittering: An internal low frequency modulation signal varies the pace at which the oscillator frequency is modulated. This helps by spreading out energy in conducted noise analysis. To improve the EMI signature at low power levels, the jittering remains active in frequency foldback mode. Frequency foldback capability: A continuous flow of pulses is not compatible with no load/light load standby power requirements. To excel in this domain, the controller observes the feedback pin and when it reaches a level of.5 V, the oscillator then starts to reduce its switching frequency as the feedback level continues to decrease. When the feedback pin reaches.05 V, the peak current setpoint is internally frozen and the frequency continues to decrease. It can go down to 6 khz (typical) reached for a feedback level of roughly 350 mv. At this point, if the power continues to drop, the controller enters classical skip cycle mode. Internal soft start: A soft start precludes the main power switch from being stressed upon start up. In this controller, the soft start is internally fixed to 4 ms. The soft start is activated when a new startup sequence occurs or during an auto recovery hiccup. OVP input: The NCP50 includes a latch input Pin that can be used to sense an overvoltage condition on the adapter. If this pin is brought higher than the internal reference voltage V latch, then the circuit permanently latches off. The V CC pin is pulled down to a fixed level, keeping the controller latched. The latch reset occurs when the user disconnects the adapter from the mains and lets the V CC falls below the V CC reset. Short circuit protection: Short circuit and especially over load protections are difficult to implement for transformers with high leakage inductance between auxiliary and power windings (the aux winding level does not properly collapse in presence of an output short). Here, every time the internal 0.8 V maximum peak current limit is activated (or less when OPP is used), an error flag is asserted and a time period starts, thanks to an internal timer. If the timer reaches completion while the error flag is still present, the controller stops the pulses and goes into a latch off phase, operating in a low frequency burst mode. When the fault is cleared, the SMPS resumes operation. Please note that some versions offer an auto recovery mode as described and some latch off in case of a short circuit. Start up Sequence The NCP50 start up voltage is made purposely high to permit a large energy storage in a small V CC capacitor value. This helps to operate with a small start up current which, together with a small V CC capacitor, will not hamper the start up time. To further reduce the standby power, the start up current of the controller is extremely low, below 5 A maximum. The start up resistor can therefore be connected to the bulk capacitor or directly to the mains input voltage to further reduce the power dissipation. 3

14 3 R3 00k 0 R 00k D N D N4007 R 00k input mains Cbulk uf VCC D6 N448 D5 N D4 N4007 D3 N4007 C 4.7uF C3 47uF aux. Figure 39. The Startup Resistor Can Be Connected to the Input Mains for Further Power Dissipation Reduction The first step starts with the calculation of the V CC capacitor which will supply the controller when it operates until the auxiliary winding takes over. Experience shows that this time t can be between 5 ms and 0 ms. If we consider we need at least an energy reservoir for a t time of 0 ms, the V CC capacitor must be larger than: CV CC I CC t VCC on VCC min 3m 0m 3.3 F (eq. ) 9 Let us select a 4.7 F capacitor at first and experiments in the laboratory will let us know if we were too optimistic for the time t. The V CC capacitor being known, we can now evaluate the charging current we need to bring the V CC voltage from 0 to the VCC on of the IC, 8 V typical. This current has to be selected to ensure a start up at the lowest mains (85 V rms) to be less than 3 s (.5 s for design margin): VCC on C VCC I charge 34 A (eq. ).5.5 If we account for the 5 A that will flow inside the controller, then the total charging current delivered by the start up resistor must be 49 A. If we connect the start up network to the mains (half wave connection then), we know that the average current flowing into this start up resistor will be the smallest when V CC reaches the VCC on of the controller: V ac,rms VCC on I CVCC,min (eq. 3) R start up To make sure this current is always greater than 49 A, then the minimum value for R start up can be extracted: V ac,rms VCC on R start up I CVCC,min k (eq. 4) This calculation is purely theoretical, and assumes a constant charging current. In reality, the take over time can be shorter (or longer!) and it can lead to a reduction of the V CC capacitor. Hence, a decrease in charging current and an increase of the start up resistor, thus reducing the standby power. Laboratory experiments on the prototype are thus mandatory to fine tune the converter. If we chose the 43 k resistor as suggested by Equation 4, the dissipated power at high line amounts to: V ac,peak P Rstart up 4R start up k (eq. 5) mw 0.87Meg Now that the first V CC capacitor has been selected, we must ensure that the self supply does not disappear when in no load conditions. In this mode, the skip cycle can be so deep that refreshing pulses are likely to be widely spaced, inducing a large ripple on the V CC capacitor. If this ripple is too large, chances exist to touch the VCC min and reset the controller into a new start up sequence. A solution is to grow this capacitor but it will obviously be detrimental to the start up time. The option offered in Figure 39 elegantly solves this potential issue by adding an extra capacitor on the auxiliary winding. However, this component is separated from the V CC pin via a simple diode. You therefore have the ability to grow this capacitor as you need to ensure the self supply of the controller without jeopardizing the start up time and standby power. A capacitor ranging from to 47 F is the typical value for this device. One note on the start-up current. If reducing it helps to improve the standby power, its value cannot fall below a certain level at the minimum input voltage. Failure to inject 4

15 enough current (30 A) at low line will turn a converter in fault into an auto-recovery mode since the SCR won t remain latched. To build a sufficient design margin, we recommend to keep at least 60 A flowing at the lowest input line (80 V rms for 85 V minimum for instance). An excellent solution is to actually combine X discharge and start-up networks as proposed in Figure 3 of application note AND8488/D. Internal Over Power Protection There are several known ways to implement Over Power Protection (OPP), all suffering from particular problems. These problems range from the added consumption burden on the converter or the skip cycle disturbance brought by the current sense offset. A way to reduce the power capability at high line is to capitalize on the negative voltage swing present on the auxiliary diode anode. During the power switch on time, this point dips to NV in, N being the turns ratio between the primary winding and the auxiliary winding. The negative plateau observed on Figure 4 will have an amplitude dependant on the input voltage. The idea implemented in this chip is to sum a portion of this negative swing with the 0.8 V internal reference level. For instance, if the voltage swings down to 50 mv during the on time, then the internal peak current set point will be fixed to = 650 mv. The adopted principle appears in Figure 4 and shows how the final peak current set point is constructed. v(4) 40.0 off time 0.0 N (V out +V f ) v(4) (V) N V bulk 40.0 on time 464u 47u 480u 488u 496u time (s) Figure 40. The Signal Obtained on the Auxiliary Winding Swings Negative During the On time Let s assume we need to reduce the peak current from.5 A at low line, to A at high line. This corresponds to a 0% reduction or a set point voltage of 640 mv. To reach this level, then the negative voltage developed on the OPP pin must reach: V OPP 640m 800m 60 mv (eq. 6) 5

16 RoppU VCC aux swings to: Vout during toff N V in during ton This p oin t will be adjusted to reduce the ref at hi line to the desired level. VDD from FB reset Iopp R oppl OPP K SU M ref K 0.8 V 5% ref = 0.8 V + VOPP CS + (V O P P is negativ e) Figure 4. The OPP Circuitry Affects the Maximum Peak Current Set Point by Summing a Negative Voltage to the Internal Voltage Reference Let us assume that we have the following converter characteristics: V out = 9 V V in = 85 to 65 V rms N = N p :N s = :0.5 N = N p :N aux = :0.8 Given the turns ratio between the primary and the auxiliary windings, the on time voltage at high line (65 Vac) on the auxiliary winding swings down to: V aux N V in,max V (eq. 7) To obtain a level as imposed by Equation 6, we need to install a divider featuring the following ratio: Div 0.6.4m (eq. 8) 67.5 If we arbitrarily fix the pull down resistor R OPPL to k, then the upper resistor can be obtained by: R OPPU 4 k (eq. 9) 0.6 k If we now plot the peak current set point obtained by implementing the recommended resistor values, we obtain the following curve (Figure 4): Peak current setpoint 00% 80% 375 V bulk Figure 4. The Peak Current Regularly Reduces Down to 0% at 375 Vdc The OPP pin is surrounded by Zener diodes stacked to protect the pin against ESD pulses. These diodes accept some peak current in the avalanche mode and are designed to sustain a certain amount of energy. On the other side, negative injection into these diodes (or forward bias) can cause substrate injection which can lead to an erratic circuit behavior. To avoid this problem, the pin is internally clamped slightly below 300 mv which means that if more current is injected before reaching the ESD forward drop, then the maximum peak reduction is kept to 40%. If the voltage finally forward biases the internal zener diode, then care must be taken to avoid injecting a current beyond ma. Given the value of R OPPU, there is no risk in the present example. 6

17 Finally, please note that another comparator internally fixes the maximum peak current set point to 0.8 V even if the OPP pin is inadvertently biased above 0 V. Frequency Foldback The reduction of no load standby power associated with the need for improving the efficiency, requires a change to the traditional fixed frequency type of operation. This controller implements a switching frequency foldback when the feedback voltage passes below a certain level, V fold, set around.5 V. At this point, the oscillator enters frequency Frequency foldback and reduces its switching frequency. The peak current setpoint follows the feedback pin until its level reaches.05 V. Below this value, the peak current freezes to V fold /4. (50 mv or 3% of the maximum 0.8 V setpoint) and the only way to further reduce the transmitted power is to reduce the operating frequency down to 6 khz. This value is reached at a voltage feedback level of 350 mv typically. Below this point, if the output power continues to decrease, the part enters skip cycle for the best noise free performance in no load conditions. Figure 43 depicts the adopted scheme for the part. Peak current setpoint FB 65 khz F sw max 0.8 V V CS max 6 khz min 0.36 V 0.5 V min V FB V FB 350 mv.5 V 3.4 V V freeze V fold 3.4 V V fold,end Vfold.05 V.5 V Figure 43. By Observing the Voltage on the Feedback Pin, the Controller Reduces its Switching Frequency for an Improved Performance at Light Load Auto Recovery Short Circuit Protection In case of output short circuit or if the power supply experiences a severe overloading situation, an internal error flag is raised and starts a countdown timer. If the flag is asserted longer than 00 ms, the driving pulses are stopped and the V CC pin slowly goes down to around 7 V. At this point, the controller wakes up and the V CC builds up again due to the resistive starting network. When V CC reaches VCC ON, the controller attempts to re start, checking for the absence of the fault. If the fault is still there, the supply enters another cycle of so called hiccup mode. If the fault has cleared, the power supply resumes normal operation. Please note that the soft start is activated during each of the re start sequence. 7

18 vcc vdrv 3 ilprim V cc (t) Plot vdrv in volts 6.05 vcc in volts 3.89 ilprim in amperes.38 V DRV (t).7..4 SS I Lp (t) m 3 500u.50m.50m 3.50m 4.50m time in seconds Figure 44. An Auto Recovery Hiccup Mode is Activated for Faults Longer than 00 ms Slope Compensation The NCP50 includes an internal ramp compensation signal. This is the buffered oscillator clock delivered only during the on time. Its amplitude is around.5 V at the maximum duty cycle. Ramp compensation is a known means used to cure sub harmonic oscillations in Continuous Conduction Mode (CCM) operated current mode converters. These oscillations take place at half the switching frequency and occur only during CCM with a duty cycle greater than 50%. To lower the current loop gain, one usually injects between 50% and 00% of the inductor downslope. Figure 45 depicts how internally the ramp is generated. Please note that the ramp signal will be disconnected from the CS pin, during the off time..5 V 0V ON latch reset 0k Rcomp + LEB CS Rsense from FB setpoint Figure 45. Inserting a Resistor in Series with the Current Sense Information Brings Ramp Compensation and Stabilizes the Converter in CCM Operation. In the NCP50 controller, the oscillator ramp features a.5 V swing reached at a 80% duty ratio. If the clock operates at a 65 khz frequency, then the available oscillator slope corresponds to: S ramp V ramp,peak D max T SW (eq. 0) 08 kv s or08mv s 8

19 In our flyback design, let s assume that our primary inductance L p is 770 H, and the SMPS delivers 9 V with a N p :N s ratio of :0.5. The off time primary current slope S p is thus given by: S p Vout V f N p N s L p (9 0.8) ka s (eq. ) Given a sense resistor of 330 m, the above current ramp turns into a voltage ramp of the following amplitude: S sense S p R sense 03k 0.33 (eq. ) 34 kv s or34mv s If we select 50% of the downslope as the required amount of ramp compensation, then we shall inject a ramp whose slope is 7 mv/ s. Our internal compensation being of 08 mv/ s, the divider ratio (divratio) between R comp and the internal 0 k resistor is: divratio 7m 0.08 (eq. 3) 08m The series compensation resistor value is thus: R comp R ramp divratio 0k k (eq. 4) A resistor of the above value will then be inserted from the sense resistor to the current sense pin. We recommend adding a small capacitor of 00 pf, from the current sense pin to the controller ground for an improved immunity to the noise. Please make sure both components are located very close to the controller. Latching Off the Controller The OPP pin not only allows a reduction of the peak current set point in relationship to the line voltage, it also offers a means to permanently latch off the part. When the part is latched off, the V CC pin is internally pulled down to around 7 V and the part stays in this state until the user cycles the V CC down and up again, e.g. by un plugging the converter from the mains outlet. It is important to note that the SCR maintains its latched state as long as the injected current stays above the minimum value of 30 A. As the SCR delatches for an injected current below this value, it is the designer duty to make sure the injected current is high enough at the lowest input voltage. Failure to maintain a sufficiently high current would make the device auto recover. A good design practice is to ensure at least 60 A at the lowest input voltage. The latch detection is made by observing the OPP pin by a comparator featuring a 3 V reference voltage. However, for noise reasons and in particular to avoid the leakage inductance contribution at turn off, a s blanking delay is introduced before the output of the OVP comparator is checked. Then, the OVP comparator output is validated only if its high state duration lasts a minimum of 600 ns. Below this value, the event is ignored. Then, a counter ensures that 4 successive OVP events have occurred before actually latching the part. There are several possible implementations, depending on the needed precision and the parameters you want to control. The first and easiest solution is the additional resistive divider on top of the OPP one. This solution is simple and inexpensive but requires the insertion of a diode to prevent disturbing the OPP divider during the on time. R3 5k D N448 RoppU 4k 0 OP P 4 VCC 9 8 aux. winding C 00p ROPPL k Vlatch 5 OVP OPP Figure 46. A Simple Resistive Divider Brings the OPP Pin Above 3 V in Case of a V CC Voltage Runaway above 8 V First, calculate the OPP network with the above equations. Then, suppose we want to latch off our controller when V out exceeds 5 V. On the auxiliary winding, the plateau reflects the output voltage by the turns ratio between the power and the auxiliary winding. In case of voltage runaway for our 9 V adapter, the plateau will go up to: V aux,ovp V (eq. 5) Since our OVP comparator trips at a 3 V level, across the k selected OPP pulldown resistor, it implies a 3 ma current. From 3 V to go up to 8 V, we need an additional 9

20 5 V. Under 3 ma and neglecting the series diode forward drop, it requires a series resistor of: R OVP V latch V VOP V OVP R OPPL k 5 5k (eq. 6) 3m In nominal conditions, the plateau establishes to around 4 V. Given the divide by 6 ratio, the OPP pin will swing to 4/6 =.3 V during normal conditions, leaving 700 mv margin. A 00 pf capacitor can be added between the OPP pin and GND to improve noise immunity and avoid erratic trips in presence of external surges. Do not increase this capacitor too much otherwise the OPP signal will be affected by the integrating time constant. A second solution for the OVP detection alone, is to use a Zener diode wired as recommended by. D3 5V D N448 ROPPU 4k 0 OPP 4 VCC 9 8 aux. winding C pf ROPPL k Vlatch 5 OVP OPP Figure 47. A Zener Diode in Series with a Diode Helps to Improve the Noise Immunity of the System For this configuration to maintain an 8 V level, we have selected a 5 V Zener diode. In nominal conditions, the voltage on the OPP pin is almost 0 V during the off time as the Zener is fully blocked. This technique clearly improves the noise immunity of the system compared to that obtained from a resistive string as in Figure 46. Please note the reduction of the capacitor on the OPP pin to 0 pf pf. This capacitor is necessary because of the potential spike coupling through the Zener parasitic capacitance from the bias winding due to the leakage inductance. Despite the s blanking delay at turn off. This spike is energetic enough to charge the added capacitor C and given the time constant, could make it discharge slower, potentially disturbing the blanking circuit. When implementing the Zener option, it is important to carefully observe the OPP pin voltage (short probe connections!) and check that enough margin exists to that respect. Over Temperature Protection In a lot of designs, the adapter must be protected against thermal runaways, e.g. when the temperature inside the adapter box increases above a certain value. Figure 48 shows how to implement a simple OTP using an external NTC and a series diode. The principle remains the same: make sure the OPP network is not affected by the additional NTC hence the presence of this isolation diode. When the NTC resistance decreases as the temperature increases, the voltage on the OPP pin during the off time will slowly increase and, once it passes 3 V for 4 consecutive clock cycles, the controller will permanently latch off. 0

21 NT C D N448 ROPPU 84k VCC OP P au x. winding ROPPL.5k Vlatch full latch OPP Figure 48. The Internal Circuitry Hooked to OPP/Latch Pin Can Be Used to Implement Over Temperature Protection (OTP) Back to our 9 V adapter, we have found that the plateau voltage on the auxiliary diode was 3 V in nominal conditions. We have selected an NTC which offers a resistance of 470 k at 5 C and drops to 8.8 k at 0 C. If our auxiliary winding plateau is 4 V and we consider a 0.6 V forward drop for the diode, then the voltage across the NTC in fault mode must be: V NTC V (eq. 7) Based on the 8.8 k NTC resistor at 0 C, the current through the device must be: I NTC 0.4. ma (eq. 8) 8.8k As such, the bottom resistor R OPPL, can easily be calculated: R OPPL 3.5 k (eq. 9).m Now that the pulldown OPP resistor is known, we can calculate the upper resistor value R OPPU to adjust the power limit at the chosen output power level. Suppose we need a 00 mv decrease from the 0.8 V set point and the on time swing on the auxiliary anode is 67.5 V, then we need to drop over R OPPU a voltage of: V ROPPU V (eq. 0) The current flowing in the pulldown resistor R OPPL in this condition will be: I ROPPU 00m 80 A (eq. ).5k The R OPPU value is therefore easily derived: R OPPU k (eq. ) 80 Combining OVP and OTP The OTP and Zener based OVP can be combined together as illustrated by Figure 49.

22 D3 5V NT C D N448 ROPPU 84k OPP VCC 9 8 au x. winding 0 4 ROPPL.5k 5 Vlatch OVP OPP Figure 49. With the NTC Back in Place, the Circuit Nicely Combines OVP, OTP and OPP on the Same Pin In nominal V CC / output conditions, when the Zener is not activated, the NTC can drive the OPP pin and trigger the adapter in case of an over temperature. During nominal temperature if the loop is broken, the voltage runaway will be detected and the controller will shut down the converter. In case the OPP pin is not used for either OPP or OVP, it can simply be grounded. Zener diode and the series diode. To prevent an adverse triggering of the Over Voltage Protection circuitry, it is possible to install a small RC filter before the detection network. Typical values are those given in Figure 50 and must be selected to provide the adequate filtering function without degrading the stand by power by an excessive current circulation. Filtering the Spikes The auxiliary winding is the seat of spikes that can couple to the OPP pin via the parasitic capacitances exhibited by the D3 5V ad d ition al fil ter NT C D N448 ROPPU 84k C 330pF R3 0 OP P VCC 9 3 aux. winding 0 4 ROPPL.5k 5 Vlatch OVP OPP Figure 50. A Small RC Filter Avoids the Fast Rising Spikes from Reaching the Protection Pin of the NCP50 in Presence of Energetic Perturbations Superimposed on the Input Line

23 PACKAGE DIMENSIONS TSOP 6 CASE 38G 0 ISSUE V E NOTE 5 e 0.05 A D ÉÉÉ 3 b E A c L H M DETAIL Z DETAIL Z L GAUGE PLANE C SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.5 PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. MILLIMETERS DIM MIN NOM MAX A A b c D E E e L L 0.5 BSC M RECOMMENDED SOLDERING FOOTPRINT* 6X X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3

24 PACKAGE DIMENSIONS NOTE 8 A D D b TOP VIEW e/ e SIDE VIEW A E B A A NOTE 3 L C SEATING PLANE H PDIP 8 CASE ISSUE N eb 8X b END VIEW 0.00 M C A M B M NOTE 6 E c END VIEW WITH LEADS CONSTRAINED M NOTE 5 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A AND L ARE MEASURED WITH THE PACK- AGE SEATED IN JEDEC SEATING PLANE GAUGE GS DIMENSIONS D, D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.0 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.05 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY. 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). INCHES MILLIMETERS DIM MIN MAX MIN MAX A A A b b TYP.5 TYP C D D E E e 0.00 BSC.54 BSC eb L M 0 0 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 807 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCP50/D

NCL30073 Current-Mode PWM Controller for LED Application

NCL30073 Current-Mode PWM Controller for LED Application Current-Mode PWM Controller for LED Application The is a highly integrated PWM controller capable of delivering a rugged and high performance LED converter in a tiny TSOP 6 package. With a supply range

More information

LM339S, LM2901S. Single Supply Quad Comparators

LM339S, LM2901S. Single Supply Quad Comparators LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features

More information

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection 3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A

More information

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output

More information

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level

More information

NB2879A. Low Power, Reduced EMI Clock Synthesizer

NB2879A. Low Power, Reduced EMI Clock Synthesizer Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic

More information

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (

More information

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer . V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The

More information

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series NCP5932, NCV5932 3. A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series The NCP5932 is a high precision, very low dropout (VLDO), low ground current positive voltage regulator that is capable

More information

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723 NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

More information

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator NCP5732, NC5732 3. A, ery Low-Dropout (LDO) Fast Transient Response Regulator The NCP5732 is a high precision, very low dropout (LDO), low minimum input voltage and low ground current positive voltage

More information

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

More information

LM321. Single Channel Operational Amplifier

LM321. Single Channel Operational Amplifier Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging

More information

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723 NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

More information

NCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path

NCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP334 and NCP335 are low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.

More information

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

More information

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant. NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)

More information

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise

More information

NCP331. Soft-Start Controlled Load Switch with Auto Discharge

NCP331. Soft-Start Controlled Load Switch with Auto Discharge Soft-Start Controlled Load Switch with Auto Discharge The NCP331 is a low Ron N channel MOSFET controlled by a soft start sequence of 2 ms for mobile applications. The very low R DS(on) allows system supplying

More information

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

More information

NCP1254 Product Preview Current-Mode PWM Controller for Off-line Power Supplies featuring Peak Power Excursion

NCP1254 Product Preview Current-Mode PWM Controller for Off-line Power Supplies featuring Peak Power Excursion Product Preview Current-Mode PWM Controller for Off-line Power Supplies featuring Peak Power Excursion The NCP14 is a highly integrated PWM controller capable of delivering a rugged and high performance

More information

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise

More information

CMPWR ma SmartOR Regulator with V AUX Switch

CMPWR ma SmartOR Regulator with V AUX Switch 50 ma SmartOR Regulator with Switch Product Description The ON Semiconductor s SmartOR is a low dropout regulator that delivers up to 50 ma of load current at a fixed 3.3 V output. An internal threshold

More information

NCP694. 1A CMOS Low-Dropout Voltage Regulator

NCP694. 1A CMOS Low-Dropout Voltage Regulator A CMOS Low-Dropout Voltage Regulator The NCP694 series of fixed output super low dropout linear regulators are designed for portable battery powered applications with high output current requirement up

More information

NSQA6V8AW5T2 Series Transient Voltage Suppressor

NSQA6V8AW5T2 Series Transient Voltage Suppressor Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.

More information

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen

More information

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen

More information

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment

More information

P2I2305NZ. 3.3V 1:5 Clock Buffer

P2I2305NZ. 3.3V 1:5 Clock Buffer 3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The

More information

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes

More information

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and

More information

NUS2045MN, NUS3045MN. Overvoltage Protection IC with Integrated MOSFET

NUS2045MN, NUS3045MN. Overvoltage Protection IC with Integrated MOSFET , Overvoltage Protection IC with Integrated MOSFET These devices represent a new level of safety and integration by combining the NCP34 overvoltage protection circuit (OVP) with a 2 V P channel power MOSFET

More information

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance

More information

NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs

NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs Lithium Battery Protection Circuit for One Cell Battery Packs The NCP800 resides in a lithium battery pack where the battery cell continuously powers it. In order to maintain cell operation within specified

More information

NCP5111PG. Half bridge Power Converters. MARKING DIAGRAMS. Features. Typical Applications ORDERING INFORMATION

NCP5111PG. Half bridge Power Converters.   MARKING DIAGRAMS. Features. Typical Applications ORDERING INFORMATION High Voltage, High and Low Side Driver The NCP is a high voltage power gate driver providing two outputs for direct drive of N channel power MOSFETs or IGBTs arranged in a half bridge configuration. It

More information

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

NCP304A. Voltage Detector Series

NCP304A. Voltage Detector Series Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

More information

NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.

NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4. NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection

More information

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection 4-Channel EMI Filter with Integrated ESD Protection The is a four channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 5 pf deliver

More information

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device

More information

NCP ecoswitch Advanced Load Management. Controlled Load Switch with Low R ON

NCP ecoswitch Advanced Load Management. Controlled Load Switch with Low R ON ecoswitch Advanced Load Management Controlled Load Switch with Low R ON The NCP4554 load switch provides a component and area-reducing solution for efficient power domain switching with inrush current

More information

NCP1255. Converters requiring peak power capability such as printers power supplies, ac dc adapters for game stations. MARKING DIAGRAM

NCP1255. Converters requiring peak power capability such as printers power supplies, ac dc adapters for game stations.  MARKING DIAGRAM Current-Mode PWM Controller for Off-line Power Supplies featuring Peak Power Excursion The NCP15 is a highly integrated PWM controller capable of delivering a rugged and high performance offline power

More information

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75 NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant

More information

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)

More information

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for

More information

NCP5360A. Integrated Driver and MOSFET

NCP5360A. Integrated Driver and MOSFET Integrated Driver and MOSFET The NCP5360A integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a 8mm x 8mm 56-pin QFN package. The driver and MOSFETs have been optimized for high-current

More information

NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.

NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4. NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection

More information

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8 NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free

More information

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator 25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage

More information

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and

More information

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

More information

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier 4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference

More information

MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection

MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications

More information

NCP A Low Dropout Linear Regulator

NCP A Low Dropout Linear Regulator 1.5 A Low Dropout Linear Regulator The NCP566 low dropout linear regulator will provide 1.5 A at a fixed output voltage. The fast loop response and low dropout voltage make this regulator ideal for applications

More information

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage The is high performance linear regulator, offering a very wide operating input voltage range of up

More information

MC3488A. Dual EIA 423/EIA 232D Line Driver

MC3488A. Dual EIA 423/EIA 232D Line Driver Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard

More information

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors

More information

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88 NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic

More information

NCP ma, 10 V, Low Dropout Regulator

NCP ma, 10 V, Low Dropout Regulator 15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

More information

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70 NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications

More information

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed

More information

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection 8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf

More information

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed

More information

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

More information

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching

More information

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,

More information

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers

MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.

More information

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier

NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv

More information

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8 NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual

More information

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices

More information

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89 NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD

More information

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23 NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive

More information

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

More information

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for

More information

NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V

NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in

More information

Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The

More information

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space

More information

NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection

NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection 8-Channel EMI Filter with Integrated ESD Protection The NUF8MU is a eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 2 pf deliver

More information

NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection

NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection 6-Channel EMI Filter with Integrated ESD Protection The NUF64MU is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 5 pf deliver

More information

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

More information

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving

More information

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component

More information

MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers

MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,

More information

NL27WZ07. Dual Buffer with Open Drain Outputs

NL27WZ07. Dual Buffer with Open Drain Outputs Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including

More information

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88 NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable

More information

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device

More information

NCP ecoswitch Advanced Load Management. Controlled Load Switch with Low R ON

NCP ecoswitch Advanced Load Management. Controlled Load Switch with Low R ON ecoswitch Advanced Load Management Controlled Load Switch with Low R ON The NCP45541 load switch provides a component and areareducing solution for efficient power domain switching with inrush current

More information

NCP102 Low Dropout Linear Regulator Controller

NCP102 Low Dropout Linear Regulator Controller Low Dropout Linear Regulator Controller The NCP is a low dropout linear regulator controller for applications requiring highcurrent and ultra low dropout voltages. The use of an external NChannel MOSFET

More information

NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection

NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection 6-Channel EMI Filter with Integrated ESD Protection The NUF615FC is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 27 pf deliver

More information