CNY75(G) Series. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards.

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1 Optocoupler with Phototransistor Output Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. CNY75(G) Series Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 4827 For appl. class I IV at mains voltage 3 V For appl. class I III at mains voltage 6 V according to VDE 884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. VDE Standards These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler for electrical safety requirements IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction B C E A (+) C ( ) n.c Ordering Code CTR Ranking Remarks CNY75A/ CNY75GA ) 63 to 25% CNY75B/ CNY75GB ) to 2% CNY75C/ CNY75GC ) 6 to 32% ) G = Leadform.6 mm; G is not marke the body Rev. A4, Jan 99 4

2 Features Approvals: BSI: BS EN 43, BS EN 695 (BS 45), BS EN 695 (BS 72), Certificate number 78 and 742 FIMKO (SETI): EN 695, Certificate number 2399 Underwriters Laboratory (UL) 577 recognized, file number E VDE 884, Certificate number VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 6 kv peak Isolation test voltage (partial discharge test voltage) V pd =.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Creepage current resistance according to VDE 33/IEC 2 Comparative Tracking Index: CTI = 275 Thickness through insulation.75 mm General features: Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE part resp. IEC 664) Climatic classification 55//2 (IEC 68 part ) Special construction: Therefore, extra low coupling capacity of typical.3 pf, high Common Mode Rejection Low temperature coefficient of CTR CTR offered in 3 groups Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current I F 6 ma Forward surge current t p s I FSM 3 A Power dissipation T amb 25C P V mw Junction temperature T j 25 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector base voltage V CBO 9 V Collector emitter voltage V CEO 9 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p ms I CM ma Power dissipation T amb 25C P V 5 mw Junction temperature T j 25 C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = min V IO 3.75 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 55 to + C Storage temperature range T stg 55 to +25 C Soldering temperature 2 mm from case, t s T sd 26 C 42 Rev. A4, Jan 99

3 Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F.25.6 V Reverse current V R = 6 V I R A Junction capacitance V R =, f = MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector base voltage I C = A V CBO 9 V Collector emitter voltage I C = ma V CEO 9 V Emitter collector voltage I E = A V ECO 7 V Collector emitter cut-off current V CE = 2 V, I F = I CEO 5 na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter I F = ma, I C = ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = ma, f c khz R L = Coupling capacitance f = MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = ma CNY75(G)A CTR.5 CNY75(G)B CTR.3 CNY75(G)C CTR.6 V CE = 5 V, I F = ma CNY75(G)A CTR CNY75(G)B CTR 2 CNY75(G)C CTR Rev. A4, Jan 99 43

4 Maximum Safety Ratings (according to VDE 884) see figure This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current I si 3 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25C P si 265 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 6 kv Safety temperature T si 5 C Insulation Rated Parameters (according to VDE 884) Parameter Test Conditions Symbol Min. Typ. Max. Unit Partial discharge test voltage Routine test %, t test = s V pd.6 kv Partial discharge test voltage t Tr = 6 s, t test = s, V IOTM 6 kv Lot test (sample test) (see figure 2) V pd.3 kv Insulation resistance V IO = 5 V R IO 2 V IO = 5 V, R IO T amb C V IO = 5 V, T amb 5C R IO 9 (construction tesly) P tot Total Power Dissipation ( mw ) I si (ma) P si (mw) T amb Ambient Temperature ( C ) Figure. Derating diagram V V IOTM V Pd V IOWM V IORM 393 t t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s t Tr = 6 s t 2 t 4 t 3 t test t stres Figure 2. Test pulse diagram for sample test according to DIN VDE 884 t 44 Rev. A4, Jan 99

5 Switching Characteristics of CNY75(G(A Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = ma, R L = (see figure 3) t d 2. s Rise time t r 2.5 s Fall time t f 2.7 s Storage time t s.3 s Turn-on time 4.5 s Turn-off time 3. s Turn-on time V S = 5 V, I F = ma, RL = k (see figure 4). s Turn-off time 25. s Switching Characteristics of CNY75(G)B Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = ma, R L = (see figure 3) t d 2.5 s Rise time t r 3. s Fall time t f 3.7 s Storage time t s.3 s Turn-on time 5.5 s Turn-off time 4. s Turn-on time V S = 5 V, I F = ma, RL = k (see figure 4) 6.5 s Turn-off time 2 s Switching Characteristics of CNY75(G)C Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = ma, R L = (see figure 3) t d 2.8 s Rise time t r 4.2 s Fall time t f 4.7 s Storage time t s.3 s Turn-on time 7. s Turn-off time 5. s Turn-on time V S = 5 V, I F = ma, RL = k (see figure 4) s Turn-off time 37.5 s Rev. A4, Jan 99 45

6 I F I F + 5 V I C = ma ; Adjusted through input amplitude R G = 5 t p T =. t p = 5 s 5 Channel I Channel II Oscilloscope R L M C L 2 pf I F t p t Figure 3. Test circuit, non-saturated operation I C % 9% I F R = 5 G t p T =. t = 5 s p 4944 I F 5 k + 5 V I C Channel I Channel II Oscilloscope R L M C L 2 pf % pulse dura- t p tion t d t r (= t d + t r ) t d t r delay time rise time turn-on time t s t f t s t f (= t s + t f ) t storage time fall time turn-off time Figure 4. Test circuit, saturated operation Figure 5. Switching times Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) Coupled device Phototransistor IR-diode T amb Ambient Temperature ( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature V F Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage 46 Rev. A4, Jan 99

7 CTR rel Relative Current Transfer Ratio I F =ma T amb Ambient Temperature ( C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure. Collector Current vs. Forward Current I CEO Collector Dark Current, with open Base ( na ) V CE =3V I F = T amb Ambient Temperature ( C ) Figure 9. Collector Dark Current vs. Ambient Temperature 95 4 CNY75A.. I F =5mA 2mA ma V CE Collector Emitter Voltage ( V ) 5mA 2mA ma Figure 2. Collector Current vs. Collector Emitter Voltage I CB Collector Base Current ( ma ) V CB =5V Figure. Collector Base Current vs. Forward Current I F =5mA CNY75B.. 2mA ma 5mA 2mA ma V CE Collector Emitter Voltage ( V ) Figure 3. Collector Current vs. Collector Emitter Voltage Rev. A4, Jan 99 47

8 ... I F =5mA 2mA ma 5mA 2mA ma CNY75. C V CE Collector Emitter Voltage ( V ) Figure 4. Collector Current vs. Collector Emitter Voltage V CEsat Collector Emitter Saturation Voltage ( V ) % CTR=5% 2% CNY75A Figure 5. Coll. Emitter Sat. Voltage vs. Coll. Current V CEsat Collector Emitter Saturation Voltage ( V ) CNY75B CTR=5% % 2% Figure 6. Coll. Emitter Sat. Voltage vs. Coll. Current V CEsat Collector Emitter Saturation Voltage ( V ) CNY75 C % CTR=5% 2% Figure 7. Coll. Emitter Sat. Voltage vs. Coll. Current h FE DC Current Gain CTR Current Transfer Ratio ( % ) Figure 8. DC Current Gain vs. Collector Current CNY75A(G) Figure 9. Current Transfer Ratio vs. Forward Current 48 Rev. A4, Jan 99

9 CTR Current Transfer Ratio ( % ) CNY75B(G ). Figure 2. Current Transfer Ratio vs. Forward Current / Turn on / Turn off Time ( s ) CNY75B(G) Saturated Operation R L =k 5 5 Figure 23. Turn on / off Time vs. Forward Current 2 CTR Current Transfer Ratio ( % ) CNY75C(G) Figure 2. Current Transfer Ratio vs. Forward Current / Turn on / Turn off Time ( s ) CNY75C(G) Saturated Operation R L =k 5 5 Figure 24. Turn on / off Time vs. Forward Current 2 / Turn on / Turn off Time ( s ) CNY75A(G) Saturated Operation R L =k Figure 22. Turn on / off Time vs. Forward Current 2 / Turn on / Turn off Time ( s ) CNY75A(G) Non Saturated Operation R L = Figure 25. Turn on / off Time vs. Collector Current Rev. A4, Jan 99 49

10 / Turn on / Turn off Time ( s ) CNY75B(G) Non Saturated Operation R L = Figure 26. Turn on / off Time vs. Collector Current / Turn on / Turn off Time ( s ) CNY75C(G) Non Saturated Operation R L = Figure 27. Turn on / off Time vs. Collector Current Type Date Code (YM) XXXXXX 98 A TK V D E Production Location Safety Logo 59 Coupling Company System Logo Indicator Figure 28. Marking example 5 Rev. A4, Jan 99

11 Dimensions of CNY75G in mm weight: ca..5 g creepage distance: air path: 8 mm 8 mm after mounting on PC board 477 Dimensions of CNY75 in mm weight:.5 g creepage distance: air path: 6 mm 6 mm after mounting on PC board 477 Rev. A4, Jan 99 5