FEATURES n Low Noise Voltage: 0.95nV/ Hz (100kHz) n Gain Bandwidth Product: LT6200/LT MHz A V = 1 LT MHz A V 5 LT GHz A V 10

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1 FEATURES n Low Noise Votage:.9nV/ Hz (khz) n Gain Bandwidth Product: LT6/LT6 6MHz A V = LT6- MHz A V LT6-.6GHz A V n Low Distortion: at MHz, R L = Ω n Dua LT6 in Tiny DFN Package n Input Common Mode Range Incudes Both Rais n Output Swings Rai-to-Rai n Low Offset Votage: Max n Wide Suppy Range: 2.V to 2.6V n Output Current: Min n SOT-23 and SO-8 Packages n Operating Temperature Range C to 8 C n Power Shutdown, Therma Shutdown APPLICATIONS Transimpedance Ampifi ers Low Noise Signa Processing Active Fiters Rai-to-Rai Buffer Ampifi ers Driving A/D Converters DESCRIPTION 6MHz, Rai-to-Rai Input and Output,.9nV/ Hz Low Noise, Op Amp Famiy The LT 6/LT6 are singe and dua utraow noise, rai-to-rai input and output unity gain stabe op amps that feature.9nv/ Hz noise votage. These ampifiers combine very ow noise with a 6MHz gain bandwidth, V/μs sew rate and are optimized for ow votage signa conditioning systems. A shutdown pin reduces suppy current during standby conditions and therma shutdown protects the part from overoad conditions. The LT6-/LT6- are singe ampifi ers optimized for higher gain appications resuting in higher gain bandwidth and sew rate. The LT6 famiy maintains its performance for suppies from 2.V to 2.6V and are specified at 3V, V and ±V. For compact ayouts the /LT6- are avaiabe in the 6-ead ThinSOT TM and the 8-pin SO package. The dua LT6 is avaiabe in an 8-pin SO package with standard pinouts as we as a tiny, dua fine pitch eadess package (DFN). These ampifi ers can be used as pug-in repacements for many high speed op amps to improve input/output range and noise performance., LT, LTC and LTM are registered trademarks of Linear Technoogy Corporation. ThinSot is a Trademark of Linear Technoogy Corporation. A other trademarks are the property of their respective owners. TYPICAL APPLICATION Singe Suppy,.nV/ Hz, Photodiode Ampifi er V C F Distortion vs Frequency A V = V O = 2V P-P V S = ±2.V PHOTO DIODE I PD PHILIPS BF862 k k + LT6 R F V OUT 2V +I PD R F DISTORTION (c) 9 HD2, R L = k HD2, R L = Ω HD3, R L = k HD3, R L = Ω k.μf 6 TA k M 6 G3 M

2 ABSOLUTE MAXIMUM RATINGS Tota Suppy Votage (V + to V )...2.6V Tota Suppy Votage (V + to V ) (LT6DD)...7V Input Current (Note 2)... ± Output Short-Circuit Duration (Note 3)... Indefinite Pin Current Whie Exceeding Suppies (Note 2)...± Operating Temperature Range (Note )... C to 8 C (Note ) Specified Temperature Range (Note )... C to 8 C Junction Temperature... C Junction Temperature (DD Package)... 2 C Storage Temperature Range... 6 C to C Storage Temperature Range (DD Package)... 6 C to 2 C Lead Temperature (Sodering, sec)... C PIN CONFIGURATION OUT V 2 +IN 3 TOP VIEW 6 V + SHDN IN S6 PACKAGE 6-LEAD PLASTIC SOT-23 T JMAX = C, θ JA = C/W (Note ) OUT A IN A +IN A V 2 3 SHDN IN +IN V 2 3 TOP VIEW S8 PACKAGE 8-LEAD PLASTIC SO T JMAX = C, θ JA = C/W TOP VIEW TOP VIEW 8 V + OUT A 8 V + 7 OUT B A IN A 2 7 OUT B 6 IN B + B +IN A 3 6 IN B +IN B V +IN B + NC V + OUT NC DD PACKAGE 8-LEAD (3mm 3mm) PLASTIC DFN T JMAX = 2 C, θ JA = C/W (NOTE 3) UNDERSIDE METAL CONNECTED TO V S8 PACKAGE 8-LEAD PLASTIC SO T JMAX = C, θ JA = C/W ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LT6CS6#PBF LT6CS6#TRPBF LTJZ 6-Lead Pastic SOT-23 C to 8 C LT6IS6#PBF LT6IS6#TRPBF LTJZ 6-Lead Pastic SOT-23 C to 8 C LT6CS6-#PBF LT6CS6-#TRPBF LTACB 6-Lead Pastic SOT-23 C to 8 C LT6IS6-#PBF LT6IS6-#TRPBF LTACB 6-Lead Pastic SOT-23 C to 8 C LT6CS6-#PBF LT6CS6-#TRPBF LTACC 6-Lead Pastic SOT-23 C to 8 C LT6IS6-#PBF LT6IS6-#TRPBF LTACC 6-Lead Pastic SOT-23 C to 8 C LT6CS8#PBF LT6CS8#TRPBF 6 8-Lead Pastic SO C to 8 C LT6IS8#PBF LT6IS8#TRPBF 6I 8-Lead Pastic SO C to 8 C LT6CS8-#PBF LT6CS8-#TRPBF 6 8-Lead Pastic SO C to 8 C 2

3 ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LT6IS8-#PBF LT6IS8-#TRPBF 6I 8-Lead Pastic SO C to 8 C LT6CS8-#PBF LT6CS8-#TRPBF 6 8-Lead Pastic SO C to 8 C LT6IS8-#PBF LT6IS8-#TRPBF I 8-Lead Pastic SO C to 8 C LT6CDD#PBF LT6CDD #TRPBF LADG 8-Lead (3mm 3mm) Pastic DFN C to 8 C LT6CS8#PBF LT6CS8 #TRPBF 6 8-Lead Pastic SO C to 8 C LT6IS8 #PBF LT6IS8 #TRPBF 6I 8-Lead Pastic SO C to 8 C Consut LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a abe on the shipping container. Consut LTC Marketing for information on non-standard ead based fi nish parts. For more information on ead free part marking, go to: For more information on tape and ree specifi cations, go to: ELECTRICAL CHARACTERISTICS uness otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V S = V, V CM =Haf Suppy V S = 3V, V CM = Haf Suppy..9 V S = V, to V.6 V S = 3V, to V.8 V CM = Haf Suppy.2 to V +. Input Offset Votage Match (Channe-to-Channe) (Note ) I B Input Bias Current V CM = Haf Suppy ΔI B I B Shift to V I B Match (Channe-to-Channe) (Note ) to V +.3 I OS Input Offset Current V CM = Haf Suppy Input Noise Votage.Hz to Hz nv P-P e n Input Noise Votage Density f = khz, V S = V f = khz, V S = V nv/ Hz nv/ Hz i n Input Noise Current Density, Baanced Source Unbaanced Source Input Resistance f = khz, V S = V f = khz, V S = V Common Mode Differentia Mode C IN Input Capacitance Common Mode Differentia Mode A VOL Large-Signa Gain V S = V, V O =.V to.v, R L = k to V S /2 V S = V, V O = V to V, R L = Ω to V S /2 V S = 3V, V O =.V to 2.V, R L = k to V S /2 CMRR Common Mode Rejection Ratio V S = V, to V + V S = V, V CM =.V to 3.V V S = 3V, to V + T A = 2 C, V S = V, V; V S = 3V, V; V CM = V OUT = haf suppy, V SHDN = OPEN, pa/ Hz pa/ Hz MΩ kω pf pf V/ V/ V/ CMRR Match (Channe-to-Channe) (Note ) V S = V, V CM =.V to 3.V PSRR Power Suppy Rejection Ratio V S = 2.V to V, LT6DD V S = 2.V to 7V 68 PSRR Match (Channe-to-Channe) (Note ) V S = 2.V to V, LT6DD V S = 2.V to 7V 6 3

4 ELECTRICAL CHARACTERISTICS T A = 2 C, V S = V, V; V S = 3V, V; V CM = V OUT = haf suppy, V SHDN = OPEN, uness otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS The denotes the specifications which appy over C < T A < C temperature range. V S = V, V; V S = 3V, V; V CM = V OUT = haf suppy, V SHDN = OPEN, uness otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V S = V, V CM = Haf Suppy V S = 3V, V CM = Haf Suppy V S = V, to V V S = 3V, to V Minimum Suppy Votage (Note 6) 2. V V OL Output Votage Swing LOW (Note 7) No Load I SINK = V S = V, I SINK = V S = 3V, I SINK = V OH Output Votage Swing HIGH (Note 7) No Load I SOURCE = V S = V, I SOURCE = V S = 3V, I SOURCE = I SC Short-Circuit Current V S = V V S = 3V I S Suppy Current per Ampifi er V S = V V S = 3V Disabed Suppy Current per Ampifi er V SHDN =.3V I SHDN SHDN Pin Current V SHDN =.3V 2 V L V SHDN Pin Input Votage LOW.3 V V H V SHDN Pin Input Votage HIGH V +. V Shutdown Output Leakage Current V SHDN =.3V. 7 t ON Turn-On Time V SHDN =.3V to.v, R L = Ω, V S = V ns t OFF Turn-Off Time V SHDN =.V to.3v, R L = Ω, V S = V ns GBW Gain Bandwidth Product Frequency = MHz, V S = V LT6- LT6- MHz MHz SR Sew Rate V S = V, A V =, R L = k, V O = V 3 V/μs Input Offset Votage Match (Channe-to-Channe) (Note ) V CM = Haf Suppy to V + V OS TC Input Offset Votage Drift (Note 8) V CM = Haf Suppy 2. 8 μv/ºc I B Input Bias Current V CM = Haf Suppy I B Match (Channe-to-Channe) (Note ) to V +. 6 ΔI B I B Shift to V I OS Input Offset Current V CM = Haf Suppy V S = V, A V =, R L = k, V O = V LT6- LT6- FPBW Fu Power Bandwidth (Note 9) V S = V, V OUT = 3V P-P (LT6) MHz t S Setting Time (LT6, LT6).%, V S = V, V STEP = 2V, A V =, R L = k 6 ns ± ± ±9 ± V/μs V/μs

5 ELECTRICAL CHARACTERISTICS The denotes the specifi cations which appy over C < T A < C temperature range. V S = V, V; V S = 3V, V; V CM = V OUT = haf suppy, V SHDN = OPEN, uness otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS A VOL Large-Signa Gain V S = V, V O =.V to.v,r L = k to V S /2 V S = V, V O =.V to 3.V,R L = Ω to V S /2 V S = 3V, V O =.V to 2.V,R L = k to V S /2 CMRR Common Mode Rejection Ratio V S = V, to V + V S = V, V CM =.V to 3.V V S = 3V, to V + CMRR Match (Channe-to-Channe) (Note ) V S = V, V CM =.V to 3.V PSRR Power Suppy Rejection Ratio V S = 3V to V, LT6DD V S = 3V to 7V 6 PSRR Match (Channe-to-Channe) (Note ) V S = 3V to V, LT6DD V S = 3V to 7V Minimum Suppy Votage (Note 6) 3 V V OL Output Votage Swing LOW (Note 7) No Load I SINK = V S = V, I SINK = V S = 3V, I SINK = V OH Output Votage Swing HIGH (Note 7) No Load I SOURCE = V S = V, I SOURCE = V S = 3V, I SOURCE = I SC Short-Circuit Current V S = V V S = 3V I S Suppy Current per Ampifi er V S = V V S = 3V Disabed Suppy Current per Ampifi er V SHDN =.3V I SHDN SHDN Pin Current V SHDN =.3V 2 29 V L V SHDN Pin Input Votage LOW.3 V V H V SHDN Pin Input Votage HIGH V +. V Shutdown Output Leakage Current V SHDN =.3V. 7 t ON Turn-On Time V SHDN =.3V to.v, R L = Ω, V S = V ns t OFF Turn-Off Time V SHDN =.V to.3v, R L = Ω, V S = V ns SR Sew Rate V S = V, A V =, R L = k, V O = V 29 2 V/μs A V =, R L = k, V O = V LT6- LT6- FPBW Fu Power Bandwidth (Note 9) V S = V, V OUT = 3V P-P (LT6) 3.7. MHz The denotes the specifications which appy over C < T A < 8 C temperature range. Excudes the LT6 in the DD package (Note 3). V S = V, V; V S = 3V, V; V CM = V OUT = haf suppy, V SHDN = OPEN, uness otherwise noted. (Note ) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V S = V, V CM = Haf Suppy V S = 3V, V CM = Haf Suppy V S = V, to V V S = 3V, to V Input Offset Votage Match (Channe-to-Channe) (Note ) V CM = Haf Suppy to V + V OS TC Input Offset Votage Drift (Note 8) V CM = Haf Suppy 2. 8 μv/ºc I B Input Bias Current V CM = Haf Suppy ± ± ±9 ± V/ V/ V/ V/μs V/μs

6 ELECTRICAL CHARACTERISTICS The denotes the specifi cations which appy over C < T A < 8 C temperature range. Excudes the LT6 in the DD package (Note 3). V S = V, V; V S = 3V, V; V CM = V OUT = haf suppy, V SHDN = OPEN, uness otherwise noted. (Note ) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS ΔI B I B Shift to V I B Match (Channe-to-Channe) (Note ) to V + 9 I OS Input Offset Current V CM = Haf Suppy A VOL Large-Signa Gain V S = V, V O =.V to.v, R L = k to V S /2 V S = V, V O =.V to 3.V, R L = Ω to V S /2 V S = 3V, V O =.V to 2.V,R L = k to V S /2 CMRR Common Mode Rejection Ratio V S = V, to V + V S = V, V CM =.V to 3.V V S = 3V, to V + CMRR Match (Channe-to-Channe) (Note ) V S = V, V CM =.V to 3.V 7 PSRR Power Suppy Rejection Ratio V S = 3V to V 68 PSRR Match (Channe-to-Channe) (Note ) V S = 3V to V Minimum Suppy Votage (Note 6) 3 V V OL Output Votage Swing LOW (Note 7) No Load I SINK = V S = V, I SINK = V S = 3V, I SINK = V OH Output Votage Swing HIGH (Note 7) No Load I SOURCE = V S = V, I SOURCE = V S = 3V, I SOURCE = I SC Short-Circuit Current V S = V V S = 3V I S Suppy Current per Ampifi er V S = V V S = 3V Disabed Suppy Current per Ampifi er V SHDN =.3V I SHDN SHDN Pin Current V SHDN =.3V 2 V L V SHDN Pin Input Votage LOW.3 V V H V SHDN Pin Input Votage HIGH V +. V Shutdown Output Leakage Current V SHDN =.3V. 7 t ON Turn-On Time V SHDN =.3V to.v, R L = Ω, V S = V ns t OFF Turn-Off Time V SHDN =.V to.3v, R L = Ω, V S = V ns SR Sew Rate V S = V, A V =, R L = k, V O = V V/μs A V =, R L = k, V O = V LT6- LT6- FPBW Fu Power Bandwidth (Note 9) V S = V, V OUT = 3V P-P (LT6) MHz T A = 2 C, V S = ±V, V CM = V OUT = V, V SHDN = OPEN, uness otherwise noted. Excudes the LT6 in the DD package (Note 3). SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V CM = Haf Suppy Input Offset Votage Match (Channe-to-Channe) (Note ) 7. ± ± ± ± V/ V/ V/ V CM = V.2 to V V/μs V/μs

7 ELECTRICAL CHARACTERISTICS T A = 2 C, V S = ±V, V CM = V OUT = V, V SHDN = OPEN, uness otherwise noted. Excudes the LT6 in the DD package (Note 3). SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I B Input Bias Current V CM = Haf Suppy ΔI B I B Shift to V I B Match (Channe-to-Channe) (Note ) to V I OS Input Offset Current V CM = Haf Suppy Input Noise Votage.Hz to Hz nv P-P e n Input Noise Votage Density f = khz.9 nv/ Hz f = khz. 23 nv/ Hz i n Input Noise Current Density, Baanced Source Unbaanced Source Input Resistance f = khz f = khz Common Mode Differentia Mode C IN Input Capacitance Common Mode Differentia Mode A VOL Large-Signa Gain V O = ±.V, R L = k V O = ±2V, R L = CMRR Common Mode Rejection Ratio to V + V CM = 2V to 2V pa/ Hz pa/ Hz MΩ kω pf pf V/ V/ CMRR Match (Channe-to-Channe) (Note ) V CM = 2V to 2V PSRR Power Suppy Rejection Ratio V S = ±.2V to ±V 68 PSRR Match (Channe-to-Channe) (Note 6) V S = ±.2V to ±V 6 V OL Output Votage Swing LOW (Note 7) No Load I SINK = I SINK = V OH Output Votage Swing HIGH (Note 7) No Load I SOURCE = I SOURCE = I SC Short-Circuit Current ± ±9 I S Suppy Current per Ampifi er 23 Disabed Suppy Current per Ampifi er V SHDN =.3V.6 2. I SHDN SHDN Pin Current V SHDN =.3V 2 V L V SHDN Pin Input Votage LOW.3 V V H V SHDN Pin Input Votage HIGH V +. V Shutdown Output Leakage Current V SHDN =.3V. 7 t ON Turn-On Time V SHDN =.3V to.v, R L = Ω, V S = V ns t OFF Turn-Off Time V SHDN =.V to.3v, R L = Ω, V S = V ns GBW Gain Bandwidth Product Frequency = MHz LT6- LT6- SR Sew Rate A V =, R L = k, V O = V 3 V/μs A V =, R L = k, V O = V LT6- LT6- FPBW Fu Power Bandwidth (Note 9) V OUT = 3V P-P (LT6-) 33 7 MHz t S Setting Time (LT6, LT6).%, V STEP =, R L = k ns MHz MHz MHz V/μs V/μs 7

8 ELECTRICAL CHARACTERISTICS The denotes the specifi cations which appy over C < T A < C temperature range. Excudes the LT6 in the DD package (Note 3). V S = ±V, V CM = V OUT = V, V SHDN = OPEN, uness otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V CM = Haf Suppy Input Offset Votage Match (Channe-to-Channe) (Note ) V CM = V to V + V OS TC Input Offset Votage Drift (Note 8) V CM = Haf Suppy μv/ºc I B Input Bias Current V CM = Haf Suppy ΔI B I B Shift to V I B Match (Channe-to-Channe) (Note ) to V + 9 I OS Input Offset Current V CM = Haf Suppy A VOL Large-Signa Gain V O = ±.V, R L = k V O = ±2V, R L = CMRR Common Mode Rejection Ratio to V + V CM = 2V to 2V CMRR Match (Channe-to-Channe) (Note ) V CM = 2V to 2V 7 PSRR Power Suppy Rejection Ratio V S = ±.V to ±V 6 PSRR Match (Channe-to-Channe) (Note 6) V S = ±.V to ±V V OL Output Votage Swing LOW (Note 7) No Load I SINK = I SINK = V OH Output Votage Swing HIGH (Note 7) No Load I SOURCE = I SINK = V/ V/ I SC Short-Circuit Current ± ±9 I S Suppy Current per Ampifi er 2 29 Disabed Suppy Current per Ampifi er V SHDN =.3V.6 2. I SHDN SHDN Pin Current V SHDN =.3V 2 29 V L V SHDN Pin Input Votage LOW.3 V V H V SHDN Pin Input Votage HIGH V +. V Shutdown Output Leakage Current V SHDN =.3V. 7 t ON Turn-On Time V SHDN =.3V to.v, R L = Ω, V S = V ns t OFF Turn-Off Time V SHDN =.V to.3v, R L = Ω, V S = V ns SR Sew Rate A V =, R L = k, V O = V 3 V/μs A V =, R L = k, V O = V LT6- LT6- FPBW Fu Power Bandwidth (Note 9) V OUT = 3V P-P (LT6-) 3 MHz 29 2 V/μs V/μs 8

9 ELECTRICAL CHARACTERISTICS The denotes the specifi cations which appy over C < T A < 8 C temperature range. Excudes the LT6 in the DD package (Note 3). V S = ±V, V CM = V OUT = V, V SHDN = OPEN, uness otherwise noted. (Note ) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V CM = Haf Suppy Input Offset Votage Match (Channe-to-Channe) (Note ) V CM = V to V + V OS TC Input Offset Votage Drift (Note 8) V CM = Haf Suppy μv/ºc I B Input Bias Current V CM = Haf Suppy ΔI B I B Shift to V I B Match (Channe-to-Channe) (Note ) 2 I OS Input Offset Current V CM = Haf Suppy A VOL Large-Signa Gain V O = ±.V, R L = k V O = ±2V R L = CMRR Common Mode Rejection Ratio to V + V CM = 2V to 2V CMRR Match (Channe-to-Channe) (Note ) V CM = 2V to 2V 7 PSRR Power Suppy Rejection Ratio V S = ±.V to ±V 6 PSRR Match (Channe-to-Channe) (Note 6) V S = ±.V to ±V V OL Output Votage Swing LOW (Note 7) No Load I SINK = I SINK = V OH Output Votage Swing HIGH (Note 7) No Load I SOURCE = I SINK = V/ V/ I SC Short-Circuit Current ± ±9 I S Suppy Current 2 29 Disabed Suppy Current V SHDN =.3V.6 2. I SHDN SHDN Pin Current V SHDN =.3V 2 29 V L V SHDN Pin Input Votage LOW.3 V V H V SHDN Pin Input Votage HIGH V +. V Shutdown Output Leakage Current V SHDN =.3V. 7 t ON Turn-On Time V SHDN =.3V to.v, R L = Ω, V S = V ns t OFF Turn-Off Time V SHDN =.V to.3v, R L = Ω, V S = V ns SR Sew Rate A V =, R L = k, V O = V 3 V/μs A V =, R L = k, V O = V LT6- LT6- FPBW Fu Power Bandwidth (Note 9) V OUT = 3V P-P (LT6-) MHz Note : Stresses beyond those isted under Absoute Maximum Ratings may cause permanent damage to the device. Exposure to any Absoute Maximum Rating condition for extended periods may affect device reiabiity and ifetime Note 2: Inputs are protected by back-to-back diodes. If the differentia input votage exceeds.7v, the input current must be imited to ess than. This parameter is guaranteed to meet specifi ed performance through design and/or characterization. It is not % tested. V/μs V/μs 9

10 ELECTRICAL CHARACTERISTICS Note 3: A heat sink may be required to keep the junction temperature beow the absoute maximum rating when the output is shorted indefinitey. The LT6 in the DD package is imited by power dissipation to VS V, V over the commercia temperature range ony. Note : The LT6C/LT6I and LT6C/LT6I are guaranteed functiona over the temperature range of C and 8 C (LT6DD excuded). Note : The LT6C/LT6C are guaranteed to meet specifi ed performance from C to C. The LT6C/LT6C are designed, characterized and expected to meet specifi ed performance from C to 8 C, but are not tested or QA samped at these temperatures. The LT6I is guaranteed to meet specifi ed performance from C to 8 C. Note 6: Minimum suppy votage is guaranteed by power suppy rejection ratio test. Note 7: Output votage swings are measured between the output and power suppy rais. Note 8: This parameter is not % tested. Note 9: Fu-power bandwidth is cacuated from the sew rate: FPBW = SR/2πV P Note : Therma resistance varies depending upon the amount of PC board meta attached to the V pin of the device. θ JA is specified for a certain amount of 2oz copper meta trace connecting to the V pin as described in the therma resistance tabes in the Appication Information section. Note : Matching parameters on the LT6 are the difference between the two ampifi ers. CMRR and PSRR match are defi ned as foows: CMRR and PSRR are measured in μv/v on the identica ampifi ers. The difference is cacuated in μv/v. The resut is converted to. Note 2: There are reverse biased ESD diodes on a inputs and outputs as shown in Figure. If these pins are forced beyond either suppy, unimited current wi f ow through these diodes. If the current is transient in nature and imited to ess than, no damage to the device wi occur. TYPICAL PERFORMANCE CHARACTERISTICS NUMBER OF UNITS V OS Distribution, /2 V S = V, V SO-8 V S = V, V V S = V, V SO-8 SO-8 NUMBER OF UNITS V OS Distribution, V OS Distribution, NUMBER OF UNITS INPUT OFFSET VOLTAGE (μv) 6 G INPUT OFFSET VOLTAGE (μv) 6 G2 INPUT OFFSET VOLTAGE (μv) 6 G3 SUPPLY CURRENT () 2 Suppy Current vs Suppy Votage T A = 2 C T A = 2 C T A = C TOTAL SUPPLY VOLTAGE (V) 6 G OFFSET VOLTAGE () Offset Votage vs Input Common Mode Votage T A = 2 C T A = 2 C T A = C V S = V, V TYPICAL PART 2 3 INPUT COMMON MODE VOLTAGE (V) 6 G INPUT BIAS CURRENT () Input Bias Current vs Common Mode Votage V S = V, V T A = 2 C T A = 2 C T A = C COMMON MODE VOLTAGE (V) 6 G6

11 TYPICAL PERFORMANCE CHARACTERISTICS INPUT BIAS CURRENT () 2 Input Bias Current vs Temperature V S = V, V V CM = V V CM = V TEMPERATURE ( C) 6 G7 OUTPUT SATURATION VOLTAGE (V).... Output Saturation Votage vs Load Current (Output Low) V S = V, V T A = 2 C T A = C T A = 2 C LOAD CURRENT () 6 G8 OUTPUT SATURATION VOLTAGE (V)... Output Saturation Votage vs Load Current (Output High) V S = V, V T A = 2 C T A = 2 C T A = C LOAD CURRENT () 6 G9 CHANGE IN OFFSET VOTLAGE () Minimum Suppy Votage OUTPUT SHORT-CIRCUIT CURRENT () Output Short-Circuit Current vs Power Suppy Votage Open-Loop Gain. 2. V CM = V S /2 SOURCING T A = C V S = 3V, V T. A = 2 C 2. T A = 2 C T A = 2 C.. T A = C.. R L = k T A = 2 C.. R L = Ω T A = 2 C SINKING T A = 2 C. T A = C.. T A = 2 C TOTAL SUPPLY VOLTAGE (V) POWER SUPPLY VOLTAGE (±V) OUTPUT VOLTAGE (V) INPUT VOLTAGE () 6 G 6 G 6 G2 INPUT VOLTAGE () Open-Loop Gain Open-Loop Gain Offset Votage vs Output Current R L = k R L = Ω 2 3 OUTPUT VOLTAGE (V) V S = V, V T A = 2 C INPUT VOLTAGE () R L = k OUTPUT VOLTAGE (V) V S = ±V T A = 2 C R L = Ω OFFSET VOLTAGE () V S = ±V T A = 2 C T A = C T A = 2 C OUTPUT CURRENT () 6 G3 6 G 6 G

12 TYPICAL PERFORMANCE CHARACTERISTICS CHANGE IN OFFSET VOLTAGE (μv) Warm-Up Drift vs Time (LT6S8) Tota Noise vs Source Resistance Input Noise Votage vs Frequency T A = 2 C V S = ±.V V S = ±2.V V S = ±V TIME AFTER POWER-UP (SEC) 6 G6 TOTAL NOISE VOLTAGE (nv/ Hz) V S = ±V V CM = V f = khz UNBALANCED SOURCE RESISTORS LT6 TOTAL NOISE RESISTOR NOISE LT6 AMPLIFIER NOISE VOLTAGE. k k k SOURCE RESISTANCE (Ω) 6 G7 NOISE VOLTAGE (nv/ Hz) 3 2 PNP ACTIVE V CM =.V NPN ACTIVE V CM =.V BOTH ACTIVE V CM = 2.V k k V S = V, V T A = 2 C 6 G8 k BALANCED NOISE CURRENT (pa/ Hz) 2 Baanced Noise Current vs Frequency PNP ACTIVE V CM =.V BOTH ACTIVE V CM = 2.V NPN ACTIVE V CM =.V k k k 6 G9 UNBALANCED NOISE CURRENT (pa/ Hz) 3 Unbaanced Noise Current vs Frequency k k k 6 G.Hz to Hz Output Noise Votage V S = V, V V S = V, V V S = V, V T A = 2 C T A = 2 C BALANCED V CM = V S /2 UNBALANCED SOURCE PNP ACTIVE SOURCE RESISTANCE 2 V RESISTANCE CM =.V BOTH ACTIVE V CM = 2.V NPN ACTIVE V CM =.V OUTPUT VOLTAGE NOISE (nv) TIME (SEC/DIV) 6 G2 SUPPLY CURRENT () Suppy Current vs SHDN Pin Votage 22 V S = V, V 8 6 T A = 2 C 2 T A = 2 C 8 6 T A = C SHDN PIN VOLTAGE (V) SHDN PIN CURRENT () SHDN Pin Current vs SHDN Pin Votage V S = V, V T A = 2 C T A = 2 C T A = C 2 3 SHDN PIN VOLTAGE (V) 6 G2a 6 G2b 2

13 TYPICAL PERFORMANCE CHARACTERISTICS LT6, LT6 GAIN BANDWIDTH (MHz) Gain Bandwidth and Phase Margin vs Temperature V S = ±V V S = 3V, V PHASE MARGIN V S = ±V V S = 3V, V GAIN BANDWIDTH TEMPERATURE ( C) 6 G22 PHASE MARGIN (DEG) GAIN () Open-Loop Gain vs Frequency PHASE GAIN V CM =.V V CM =.V V CM =.V V CM =.V V S = V, V C L = pf R L = k k M M M G 6 G23 PHASE (DEG) GAIN () Open-Loop Gain vs Frequency PHASE (DEG) Gain Bandwidth and Phase Margin vs Suppy Votage T A = 2 C PHASE R L = k C V S = ±V L = pf PHASE MARGIN GAIN V S = ±.V V S = ±V V S = ±.V GAIN BANDWIDTH V CM = V C L = pf R L = k k M M M G TOTAL SUPPLY VOLTAGE (V) GAIN BANDWIDTH (MHz) PHASE MARGIN (DEG) 6 G2 6 G2 SLEW RATE (V/μs) Sew Rate vs Temperature A V = R F = R G = k R L = k V S = ±V FALLING V S = ±V RISING V S = ±2.V RISING V S = ±2.V FALLING TEMPERATURE ( C) 6 G26 2 OUTPUT IMPEDANCE (Ω) Output Impedance vs Frequency V S = V, V A V = A V = 2 A V =... FREQUENCY (MHz) 6 G27 COMMON MODE REJECTION RATIO () Common Mode Rejection Ratio vs Frequency V S = V, V V CM = V S /2 k k M M M G 6 G28 3

14 TYPICAL PERFORMANCE CHARACTERISTICS LT6, LT6 POWER SUPPLY REJECTION RATIO () Power Suppy Rejection Ratio vs Frequency NEGATIVE SUPPLY V S = V, V V CM = V S /2 T A = 2 C POSITIVE SUPPLY OVERSHOOT (%) 3 2 Overshoot vs Capacitive Load V S = V, V A V = R S = Ω R L = Ω R S = Ω R S = Ω OVERSHOOT (%) Overshoot vs Capacitive Load V S = V, V A V = 2 R S = Ω R S = Ω R L = Ω R S = Ω k k k M M M CAPACITIVE LOAD (pf) CAPACITIVE LOAD (pf) 6 G29 6 G 6 G3 SETTLING TIME (ns) Setting Time vs Output Step (Noninverting) V S = ±V A V = T A = 2 C V IN + + V S = ±V Ω A V = Ω 9 A V = T V A = 2 C V IN A V = 2 OUT Ω V OUT OUTPUT STEP (V) 6 G32 SETTLING TIME (ns) Setting Time vs Output Step (Inverting) OUTPUT STEP (V) 6 G33 OUTPUT VOLTAGE SWING (V P-P ) 3 Maximum Undistorted Output Signa vs Frequency 2 k V S = ±V T A = 2 C HD2, HD3 < c k M M 6 G3 DISTORTION (c) 9 k Distortion vs Frequency, A V = A V = V O = 2V P-P V S = ±2.V HD2, R L = k HD2, R L = Ω HD3, R L = Ω M HD3, R L = k 6 G3 M DISTORTION (c) 9 k Distortion vs Frequency, A V = A V = V O = 2V P-P V S = ±V HD2, R L = k HD2, R L = Ω HD3, R L = Ω M HD3, R L = k 6 G36 M DISTORTION (c) 9 k Distortion vs Frequency, A V = 2 A V = 2 V O = 2V P-P V S = ±2.V HD2, R L = Ω HD3, R L = Ω HD2, R L = k M HD3, R L = k 6 G37 M

15 TYPICAL PERFORMANCE CHARACTERISTICS LT6, LT6 DISTORTION (c) 9 k Distortion vs Frequency, A V = 2 A V = 2 V O = 2V P-P V S = ±V HD2, R L = Ω HD2, R L = k HD3, R L = Ω M V Large-Signa Response HD3, R L = k 6 G38 M VOLTAGE GAIN () 9. Channe Separation vs Frequency T A = 2 C A V = V S = ±V FREQUENCY (MHz) ±V Large-Signa Response 6 G38a V V/DIV V 2V/DIV V V S = V, V A V = R L = k ns/div 6 G39 V S = ±V A V = R L = k ns/div 6 G Output Overdrive Recovery V Sma-Signa Response V IN V/DIV V /DIV V out 2V/DIV V V S = V, V A V = 2 ns/div 6 G V S = V, V A V = R L = k ns/div 6 G2

16 TYPICAL PERFORMANCE CHARACTERISTICS LT6- Gain Bandwidth and Phase Margin vs Temperature Sew Rate vs Temperature Overshoot vs Capacitive Load GAIN BANDWIDTH (MHz) 9 PHASE MARGIN GAIN BANDWIDTH V S = ±V V S = 3V, V V S = ±V V S = 3V, V 9 PHASE MARGIN (DEG) SLEW RATE (V/μs) A V = R F = R L = k R G = Ω V S = ±V FALLING V S = ±V RISING V S = ±2.V FALLING V S = ±2.V RISING OVERSHOOT (%) V S = V, V A V = R S = Ω R S = Ω R S = Ω R S = Ω TEMPERATURE ( C) TEMPERATURE ( C) 2 CAPACITIVE LOAD (pf) 6 G 6 G6 6 G7 POWER SUPPLY REJECTION RATIO () Power Suppy Rejection Ratio vs Frequency POSITIVE V S = V, V V S = V, V SUPPLY T A = 2 C 9 PHASE V S = ±V V CM = V S /2 NEGATIVE SUPPLY V S = ±.V A V = GAIN A V = V S = ±V. V CM = V V S = ±.V C L = pf R L = k. k k k M M M k M M M k M M M G 6 G8 OUTPUT IMPEDANCE (Ω) Output Impedance vs Frequency 6 G9 GAIN () Open-Loop Gain vs Frequency 6 G PHASE (DEG) GAIN () Open-Loop Gain vs Frequency 9 PHASE V CM =.V V CM =.V GAIN V CM =.V V CM =.V V S = V, V C L = pf R L = k k M M M G 6 G PHASE (DEG) GAIN BANDWIDTH (MHz) Gain Bandwidth and Phase Margin vs Suppy Votage T A = 2 C R L = k C L = pf PHASE MARGIN GAIN BANDWIDTH TOTAL SUPPLY VOLTAGE (V) 2 6 G2 9 PHASE MARGIN (DEG) GAIN BANDWIDTH (MHz) 9 Gain Bandwidth vs Resistor Load V S = ±V R F = k R G = k T A = 2 C 9 RESISTOR LOAD (Ω) G G3 6

17 TYPICAL PERFORMANCE CHARACTERISTICS LT6- COMMON MODE REJECTION RATIO () Common Mode Rejection Ratio vs Frequency V S = V, V V CM = V S /2 k k M M M G OUTPUT VOLTAGE SWING (V P-P ) Maximum Undistorted Output Signa vs Frequency 2 V S = ±V A V = T A = 2 C k k M M M DISTORTION () 9 k 2nd and 3rd Harmonic Distortion vs Frequency A V = V O = 2V P-P V S = ±2.V R L = Ω, 3RD R L = Ω, 2ND R L = k, 2ND R L = k, 3RD k M M 6 G 6 G 6 G6 DISTORTION () 9 2nd and 3rd Harmonic Distortion vs Frequency ±V Large-Signa Response Output-Overdrive Recovery A V = V O = 2V P-P V S = ±V V V IN V/DIV V R L = Ω, 2ND R L 2V/DIV V = Ω, 3RD V OUT R L = k, 2ND 2V/DIV V V k R L = k, 3RD k M M V S = ±V ns/div A V = R L = k C L =.8pF SCOPE PROBE 6 G8 V S = V, V ns/div A V = CL =.8pF SCOPE PROBE 6 G9 6 G7 V Sma-Signa Response nv Input Referred High Frequency Noise Spectrum /DIV V nv/ Hz/DIV V S = V, V ns/div A V = R L = k C L =.8pF SCOPE PROBE 6 G nv khz MHz/DIV khz 6 G6 NOISE LIMITED BY INSTRUMENT NOISE FLOOR 7

18 TYPICAL PERFORMANCE CHARACTERISTICS LT6- GAIN BANDWIDTH (MHz) Gain Bandwidth and Phase Margin vs Temperature Sew Rate vs Temperature Overshoot vs Capacitive Load PHASE MARGIN GAIN BANDWIDTH V S = ±V V S = ±V V S = 3V, V V S = 3V, V TEMPERATURE ( C) 6 G62 PHASE MARGIN (DEG) SLEW RATE (V/μs) A V = R F = R L = k R G = Ω V S = ±V FALLING V S = ±V RISING V S = ±2.V RISING V S = ±2.V FALLING TEMPERATURE ( C) 6 G63 OVERSHOOT (%) V S = V, V A V = R S = Ω R S = Ω R S = Ω R S = Ω CAPACITIVE LOAD (pf) 6 G6 POWER SUPPLY REJECTION RATIO () Power Suppy Rejection Ratio vs Frequency Output Impedance vs Frequency Open-Loop Gain vs Frequency POSITIVE V S = V, V V S = V, V SUPPLY T A = 2 C 9 PHASE V CM = V S /2 NEGATIVE V S = ±V SUPPLY A V = V S = ±.V GAIN A V = V S = ±.V V S = ±V. V CM = V C L = pf R L = k. k k k M M M k M M M k M M M G 6 G6 OUTPUT IMPEDANCE (Ω) 6 G66 GAIN () 6 G67 PHASE (DEG) GAIN () 9 Open-Loop Gain vs Frequency GAIN PHASE V CM =.V V CM =.V V CM =.V V CM =.V V S = V, V C L = pf R L = k k M M M G 6 G68 PHASE (DEG) GAIN BANDWIDTH (MHz) Gain Bandwidth and Phase Margin vs Suppy Votage T A = 2 C R L = k C L = pf PHASE MARGIN GAIN BANDWIDTH TOTAL SUPPLY VOLTAGE (V) 2 6 G69 9 PHASE MARGIN (DEG) GAIN BANDWIDTH (MHz) Gain Bandwidth vs Resistor Load V S = ±V R F = k R G = k T A = 2 C 9 RESISTOR LOAD (Ω) G G 8

19 TYPICAL PERFORMANCE CHARACTERISTICS LT6- COMMON MODE REJECTION RATIO () Common Mode Rejection Ratio vs Frequency V S = V, V V CM = V S /2 k k M M M G OUTPUT VOLTAGE SWING (V P-P ) Maximum Undistorted Output Signa vs Frequency 2 V S = ±V A V = T A = 2 C k k M M M DISTORTION () 9 k 2nd and 3rd Harmonic Distortion vs Frequency A V = V O = 2V P-P V S = ±2.V R L = k, 3RD R L = Ω, 2ND R L = Ω, 3RD R L = k, 2ND k M M 6 G7 6 G72 6 G73 DISTORTION () 2nd and 3rd Harmonic Distortion vs Frequency ±V Large-Signa Response Output-Overdrive Recovery A V = V O = 2V P-P V V S = ±V V IN R L = Ω, 2ND V/DIV V R L = Ω, 3RD 2V/DIV V R L = k, 3RD V OUT 2V/DIV V 9 V 6 G7 6 G76 R L = k, 2ND V S = ±V ns/div V S = V, V ns/div A V = A V = R L = k k k M M C L =.8pF SCOPE PROBE C L =.8pF SCOPE PROBE 6 G7 V Sma-Signa Response nv Input Referred High Frequency Noise Spectrum /DIV V nv/ Hz/DIV V S = V, V ns/div A V = R L = k C L =.8pF SCOPE PROBE 6 G77 nv khz MHz/DIV khz 6 G78 9

20 APPLICATIONS INFORMATION Ampifi er Characteristics Figure shows a simpified schematic of the LT6 famiy, which has two input differentia ampifi ers in parae that are biased on simutaneousy when the common mode votage is at east.v from either rai. This topoogy aows the input stage to swing from the positive suppy votage to the negative suppy votage. As the common mode votage swings beyond V CC.V, current source I saturates and current in Q/Q is zero. Feedback is maintained through the Q2/Q3 differentia ampifier, but with an input g m reduction of /2. A simiar effect occurs with I 2 when the common mode votage swings within.v of the negative rai. The effect of the g m reduction is a shift in the V OS as I or I 2 saturate. Input bias current normay f ows out of the + and inputs. The magnitude of this current increases when the input common mode votage is within.v of the negative rai, and ony Q/Q are active. The poarity of this current reverses when the input common mode votage is within.v of the positive rai and ony Q2/Q3 are active. The second stage is a foded cascode and current mirror that converts the input stage differentia signas to a singe ended output. Capacitor C reduces the unity cross frequency and improves the frequency stabiity without degrading the gain bandwidth of the ampifier. The differentia drive generator suppies current to the output transistors that swing from rai-to-rai. The LT6-/LT6- are decompensated op amps for higher gain appications. These ampifiers maintain identica DC specifications with the LT6, but have a reduced Mier compensation capacitor C M. This resuts in a significanty higher sew rate and gain bandwidth product. Input Protection There are back-to-back diodes, D and D2, across the + and inputs of these ampifiers to imit the differentia input votage to ±.7V. The inputs of the LT6 famiy do not have interna resistors in series with the input transistors. This technique is often used to protect the input devices from overvotage that causes excessive currents to fow. The addition of these resistors woud significanty degrade the ow noise votage of these ampifi ers. For instance, a Ω resistor in series with each input woud generate.8nv/ Hz of noise, and the tota ampifier noise votage woud rise from.9nv/ Hz to 2.3nV/ Hz. Once the input differentia votage exceeds ±.7V, steady-state current conducted though the protection diodes shoud be imited to ±. This impies 2Ω of protection resistance per vot of continuous overdrive beyond ±.7V. The input diodes are rugged enough to hande transient currents due to ampifier sew rate overdrive or momentary cipping without these resistors. Figure 2 shows the input and output waveforms of the LT6 driven into cipping whie connected in a gain of V+ R I R2 BIAS DESD7 V SHDN Q DESD8 V DESD + DESD3 +V DESD2 D DESD D2 Q Q2 Q3 Q Q Q8 C +V Q9 Q6 Q7 C M DIFFERENTIAL DRIVE GENERATOR V +V DESD DESD6 V +V Q V R3 R R I 2 D3 Figure. Simpifi ed Schematic V 63/ F

21 APPLICATIONS INFORMATION A V =. In this photo, the input signa generator is cipping at ±3, and the output transistors suppy this generator current through the protection diodes. V 6 F2 Figure 2. V S = ±2.V, A V = with Large Overdrive V CC 2.V V EE 2.V ESD The LT6 has reverse-biased ESD protection diodes on a inputs and outputs as shown in Figure. If these pins are forced beyond either suppy, unimited current wi fow through these diodes. If the current is transient and imited to or ess, no damage to the device wi occur. Noise The noise votage of the LT6 is equivaent to that of a 6Ω resistor, and for the owest possibe noise it is desirabe to keep the source and feedback resistance at or beow this vaue, i.e., R S + R G //R FB 6Ω. With R S + R G //R FB = 6Ω the tota noise of the ampifi er is: e n = (.9nV) 2 + (.9nV) 2 =.3nV. Beow this resistance vaue, the ampifi er dominates the noise, but in the resistance region between 6Ω and approximatey 6kΩ, the noise is dominated by the resistor therma noise. As the tota resistance is further increased, beyond 6k, the noise current mutipied by the tota resistance eventuay dominates the noise. For a compete discussion of ampifier noise, see the LT28 data sheet. Power Dissipation The LT6 combines high speed with arge output current in a sma package, so there is a need to ensure that the die s junction temperature does not exceed C. The LT6 is housed in a 6-ead TSOT-23 package. The package has the V suppy pin fused to the ead frame to enhance the therma conductance when connecting to a ground pane or a arge meta trace. Meta trace and pated through-hoes can be used to spread the heat generated by the device to the backside of the PC board. For exampe, on a 3/32 FR- board with 2oz copper, a tota of 2 square miimeters connects to Pin 2 of the LT6 in an TSOT-23 package wi bring the therma resistance, θ JA, to about 3 C/W. Without extra meta trace beside the power ine connecting to the V pin to provide a heat sink, the therma resistance wi be around C/W. More information on therma resistance with various meta areas connecting to the V pin is provided in Tabe. Tabe. LT6 6-Lead TSOT-23 Package COPPER AREA BOARD AREA THERMAL RESISTANCE TOPSIDE (MM2) (JUNCTION-TO-AMBIENT) 2 3ºC/W ºC/W ºC/W ºC/W Device is mounted on topside. Junction temperature T J is cacuated from the ambient temperature T A and power dissipation P D as foows: T J = T A + (P D θ JA ) The power dissipation in the IC is the function of the suppy votage, output votage and the oad resistance. For a given suppy votage, the worst-case power dissipation P D(MAX) occurs at the maximum quiescent suppy current and at the output votage which is haf of either suppy votage (or the maximum swing if it is ess than /2 the suppy votage). P D(MAX) is given by: P D(MAX) = (V S I S(MAX) ) + (V S /2) 2 /R L Exampe: An LT6 in TSOT-23 mounted on a mm 2 area of PC board without any extra heat spreading pane connected to its V pin has a therma resistance of 2

22 APPLICATIONS INFORMATION C/W, θ JA. Operating on ±V suppies driving Ω oads, the worst-case power dissipation is given by: P D(MAX) = ( 23) + (2.) 2 / = =.3W The maximum ambient temperature that the part is aowed to operate is: T A = T J (P D(MAX) C/W) = C (.3W C/W) = 79 C To operate the device at higher ambient temperature, connect more meta area to the V pin to reduce the therma resistance of the package as indicated in Tabe. DD Package Heat Sinking The underside of the DD package has exposed meta (mm 2 ) from the ead frame where the die is attached. This provides for the direct transfer of heat from the die junction to printed circuit board meta to hep contro the maximum operating junction temperature. The dua-in-ine pin arrangement aows for extended meta beyond the ends of the package on the topside (component side) of a PCB. Tabe 2 summarizes the therma resistance from the die junction-to-ambient that can be obtained using various amounts of topside meta (2oz copper) area. On muitayer boards, further reductions can be obtained using additiona meta on inner PCB ayers connected through vias beneath the package. Tabe 2. LT6 8-Lead DD Package COPPER AREA TOPSIDE (mm 2 ) THERMAL RESISTANCE (JUNCTION-TO-AMBIENT) ºC/W 6 3ºC/W 32 ºC/W 6 9ºC/W ºC/W The LT6 ampifier famiy has therma shutdown to protect the part from excessive junction temperature. The ampifier wi shut down to approximatey.2 suppy current per ampifier if the maximum temperature is exceeded. The LT6 wi remain off unti the junction temperature reduces to about 3 C, at which point the ampifier wi return to norma operation. PACKAGE DESCRIPTION DD Package 8-Lead Pastic DFN (3mm 3mm) (Reference LTC DWG # ).67 ±. R =. TYP 8.38 ±. 3. ±. 2. ±. RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS NOTE:. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M-229 VARIATION OF (WEED-) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 22.6 ±. (2 SIDES).2 ±.. BSC 2.38 ±. (2 SIDES) PACKAGE OUTLINE PIN TOP MARK (NOTE 6). REF 3. ±. ( SIDES).7 ±....6 ±. (2 SIDES).2 ±.. BSC 2.38 ±. (2 SIDES) BOTTOM VIEW EXPOSED PAD (DD) DFN 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED.mm ON ANY SIDE. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN LOCATION ON TOP AND BOTTOM OF PACKAGE

23 PACKAGE DESCRIPTION S6 Package 6-Lead Pastic TSOT-23 (Reference LTC DWG # ).62 MAX.9 REF 2.9 BSC (NOTE ).22 REF 3.8 MAX 2.62 REF. MIN 2. BSC..7 (NOTE ) PIN ONE ID RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR.9 BSC.. 6 PLCS (NOTE 3)..9. BSC... MAX DATUM A.. REF.9..9 BSC (NOTE 3) S6 TSOT-23 2 REV B NOTE:. DIMENSIONS ARE IN MILLIMETERS. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 2. DRAWING NOT TO SCALE. MOLD FLASH SHALL NOT EXCEED.2mm 3. DIMENSIONS ARE INCLUSIVE OF PLATING 6. JEDEC PACKAGE REFERENCE IS MO-93 S8 Package 8-Lead Pastic Sma Outine (Narrow. Inch) (Reference LTC DWG # -8-). BSC. ± (..) NOTE MIN. ± ( )..7 ( ) NOTE 3. ±. TYP RECOMMENDED SOLDER PAD LAYOUT (.3.2).. (.2.8) 8 TYP.3.69 (.36.72).. (..2) (.6.2) (.3.83) NOTE: INCHES TYP. DIMENSIONS IN (MILLIMETERS) 2. DRAWING NOT TO SCALE 3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED.6" (.mm). (.2) BSC Information furnished by Technoogy Corporation is beieved to be accurate and reiabe. However, no responsibiity is assumed for its use. Technoogy Corporation makes no representation that the interconnection of its circuits as described herein wi not infringe on existing patent rights. SO8 3 23

24 TYPICAL APPLICATION Rai-to-Rai High Speed Low Noise Instrumentation Ampifi er + LT6- Ω Ω k pf 9.9Ω 9.9Ω Ω + LT6-9.9Ω V OUT k LT6- Ω A V = A V = 3 6 TA3 + Instrumentation Ampifi er Frequency Response 2.3 3/DIV FREQUENCY (MHZ) A V = BW 3 = 8MHz SLEW RATE = V/μs CMRR = at MHz 6 TA RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT28 Singe, Utra Low Noise MHz Op Amp.nV/ Hz LT677 Singe, Low Noise Rai-to-Rai Ampifi er 3V Operation, 2.,.nV/ Hz, μv Max V S LT722/LT723/LT72 Singe/Dua/Quad Low Noise Precision Op Amp V/μs Sew Rate, μv Max V OS, 3.8nV/ Hz, 3.7 LT6/LT7 Singe/Dua, Low Noise 32MHz Rai-to-Rai Ampifi er 2.V Operation, μv Max V OS, 3.nV/ Hz LT63 Dua, Low Noise, Low Current Rai-to-Rai Ampifi er.9nv/ Hz, 3 Max, MHz Gain Bandwidth 2 Linear Technoogy Corporation LT 8 REV B PRINTED IN USA 6 McCarthy Bvd., Mipitas, CA (8) 32-9 FAX: (8) LINEAR TECHNOLOGY CORPORATION 2