Logic Controlled, High-Side Power Switches ADP190/ADP191

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1 Logic Controlled, High-Side Power Switches FEAURES Low RDSON of 5 mω at.8 V Internal output discharge resistor (ADP9) urn-on slew rate limiting (ADP9) Low input voltage range:. V to 3.6 V 5 ma continuous operating current Built-in level shift for control logic that can be operated by. V logic Low μa (maximum) ground current Ultralow shutdown current: < μa Ultrasmall.8 mm.8 mm, 4-ball,.4 mm pitch WLCSP APPLICAIONS Mobile phones Digital cameras and audio devices Portable and battery-powered equipment EN EN + + YPICAL APPLICAIONS CIRCUI VIN GND ON OFF VIN GND ON OFF ADP9 ADP9 LEVEL SHIF AND SLEW RAE CONROL Figure. LEVEL SHIF AND SLEW RAE CONROL AND LOAD DISCHARGE Figure. VOU LOAD VOU LOAD GENERAL DESCRIPION he are high-side load switches designed for operation from. V to 3.6 V. hese load switchs provide power domain isolation for extended power battery life. he devices contain a low on-resistance P-channel MOSFE that supports more than 5 ma of continuous current and minimizes power loss. he low μa (maximum) of ground current and ultralow shutdown current make the ideal for batteryoperated portable equipment. he built-in level shifter for enable logic makes the compatible with modern processors and GPIO controllers. he ADP9 controls the turn-on slew rate of the switch to reduce the input inrush current. he ADP9 also incorporates an internal output discharge resistor to discharge the output capacitance when the ADP9 output is disabled. Beyond operating performance, the occupy minimal printed circuit board (PCB) space with an area less than.64 mm and a height of. mm. It is available in an ultrasmall.8 mm.8 mm, 4-ball,.4 mm pitch WLCSP. Rev. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. rademarks and registered trademarks are the property of their respective owners. One echnology Way, P.O. Box 96, Norwood, MA 6-96, U.S.A. el: Fax: Analog Devices, Inc. All rights reserved.

2 ABLE OF CONENS Features... Applications... ypical Applications Circuit... General Description... Revision History... Specifications... 3 iming Diagram... 4 Absolute Maximum Ratings... 5 hermal Data... 5 hermal Resistance... 5 ESD Caution... 5 Pin Configuration and Function Descriptions...6 ypical Performance Characteristics...7 heory of Operation...9 Applications Information... Ground Current... Enable Feature... iming... hermal Considerations... PCB Layout Considerations... 4 Outline Dimensions... 5 Ordering Guide... 5 REVISION HISORY / Rev. C to Rev. D Changed 4 mω to 4 MΩ in heory of Operation Section / Rev. B to Rev. C Change to Low Input Voltage Range Value... hroughout / Rev. A to Rev. B Added ADP9... hroughout Changes to able... 3 Changes to able Changes to Ordering Guide /9 Rev. to Rev. A Changes to Ordering Guide... 3 /9 Revision : Initial Version Rev. D Page of 6

3 SPECIFICAIONS VIN =.8 V, VEN = VIN, ILOAD = ma, A = 5 C, unless otherwise noted. able. ADP9 Parameter Symbol est Conditions Min yp Max Unit INPU VOLAGE RANGE VIN J = 4 C to +85 C. 3.6 V EN INPU EN Input hreshold VEN_H. V VIN.3 V, J = 4 C to +85 C.3. V.3 V < VIN <.8 V, J = 4 C to +85 C.4. V.8 V VIN 3.6 V, J = 4 C to +85 C.45. V Logic High Voltage VIH. V VIN 3.6 V. V Logic Low Voltage VIL. V VIN 3.6 V.3 V EN Input Pull-Down Resistance REN 4 MΩ CURREN Ground Current IGND VIN = 3.6 V, VOU open, J = 4 C to +85 C μa Shutdown Current IOFF EN = GND. μa EN = GND, J = 4 C to +85 C μa VIN to VOU RESISANCE RDSON VIN = 3.6 V, ILOAD = ma, EN =.5 V mω VIN =.5 V, ILOAD = ma, EN =.5 V 9 mω VIN =.8 V, ILOAD = ma, EN =.5 V 5 3 mω VIN =.5 V, ILOAD = ma, EN =.5 V 5 mω VIN =. V, ILOAD = ma, EN = V mω VOU IME urn-on Delay ime ton_dly ILOAD = ma, EN =.5 V, CLOAD = μf 5 μs urn-on Delay ime ton_dly VIN = 3.6 V, ILOAD = ma, EN =.5 V, CLOAD = μf.5 μs Ground current includes EN pull-down current. able. ADP9 Parameter Symbol est Conditions Min yp Max Unit INPU VOLAGE RANGE VIN J = 4 C to +85 C. 3.6 V EN INPU EN Input hreshold VEN_H. V VIN.3 V, J = 4 C to +85 C.3. V.3 V < VIN <.8 V, J = 4 C to +85 C.4. V.8 V VIN 3.6 V, J = 4 C to +85 C.45. V Logic High Voltage VIH. V VIN 3.6 V. V Logic Low Voltage VIL. V VIN 3.6 V.3 V EN Input Pull-Down Resistance REN 4 MΩ CURREN Ground Current IGND VIN = 3.6 V, VOU open, J = 4 C to +85 C μa Shutdown Current IOFF EN = GND. μa EN = GND, J = 4 C to +85 C μa VIN to VOU RESISANCE RDSON VIN = 3.6 V, ILOAD = ma, EN =.5 V mω VIN =.5 V, ILOAD = ma, EN =.5 V 9 mω VIN =.8 V, ILOAD = ma, EN =.5 V 5 3 mω VIN =.5 V, ILOAD = ma, EN =.5 V 5 mω VIN =. V, ILOAD = ma, EN = V mω VOU DISCHARGE RESISANCE RDIS 5 Ω VOU IME urn-on Delay ime ton_dly ILOAD = ma, EN =.5 V, CLOAD = μf μs urn-on Delay ime ton_dly VIN = 3.6 V, ILOAD = ma, EN =.5 V, CLOAD = μf 5 μs Ground current includes EN pull-down current. Rev. D Page 3 of 6

4 IMING DIAGRAM URN-ON DELAY URN-OFF DELAY 9% % URN-ON RISE Figure 3. iming Diagram URN-OFF FALL Rev. D Page 4 of 6

5 ABSOLUE MAXIMUM RAINGS able 3. Parameter VIN to GND Pins VOU to GND Pins EN to GND Pins Continuous Drain Current A = 5 C A = 85 C Continuous Diode Current Storage emperature Range Operating Junction emperature Range Soldering Conditions Rating.3 V to +4. V.3 V to VIN.3 V to +4. V ± A ±5 ma 5 ma 65 C to +5 C 4 C to +5 C JEDEC J-SD- Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. his is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. HERMAL DAA Absolute maximum ratings apply individually only, not in combination. he can be damaged when the junction temperature limits are exceeded. Monitoring ambient temperature does not guarantee that J is within the specified temperature limits. In applications with high power dissipation and poor PCB thermal resistance, the maximum ambient temperature may need to be derated. In applications with moderate power dissipation and low PCB thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature is within specification limits. he junction temperature (J) of the device is dependent on the ambient temperature (A), the power dissipation of the device (PD), and the junction-to-ambient thermal resistance of the package (θja). Maximum junction temperature (J) is calculated from the ambient temperature (A) and power dissipation (PD) using the formula J = A + (PD θja) Junction-to-ambient thermal resistance (θja) of the package is based on modeling and calculation using a 4-layer board. he junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to thermal board design is required. he value of θja may vary, depending on PCB material, layout, and environmental conditions. he specified values of θja are based on a 4-layer, 4 inch 3 inch PCB. See JESD5-7 and JESD5-9 for detailed information regarding board construction. For additional information, see the AN-67 application note, MicroCSP M Wafer Level Chip Scale Package. ΨJB is the junction-to-board thermal characterization parameter with units of C/W. ΨJB of the package is based on modeling and calculation using a 4-layer board. he JESD5- document, Guidelines for Reporting and Using Electronic Package hermal Information, states that thermal characterization parameters are not the same as thermal resistances. ΨJB measures the component power flowing through multiple thermal paths rather than through a single path, as in thermal resistance (θjb). herefore, ΨJB thermal paths include convection from the top of the package as well as radiation from the package, factors that make ΨJB more useful in real-world applications. Maximum junction temperature (J) is calculated from the board temperature (B) and the power dissipation (PD) using the formula J = B + (PD ΨJB) See JESD5-8, JESD5-9, and JESD5- for more detailed information about ΨJB. HERMAL RESISANCE θja and ΨJB are specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. able 4. hermal Resistance Package ype θja ΨJB Unit 4-Ball,.4 mm Pitch WLCSP 58.4 C/W ESD CAUION Rev. D Page 5 of 6

6 PIN CONFIGURAION AND FUNCION DESCRIPIONS A VIN VOU B OP VIEW (Not to Scale) EN GND Figure 4. Pin Configuration able 5. Pin Function Descriptions Pin No. Mnemonic Description A VIN Input Voltage. B EN Enable Input. Drive EN high to turn on the switch; drive EN low to turn off the switch. A VOU Output Voltage. B GND Ground. Rev. D Page 6 of 6

7 YPICAL PERFORMANCE CHARACERISICS VIN =.8 V, VEN = VIN > VIH, ILOAD = ma, A = 5 C, unless otherwise noted. V IN =.V = 3.6V I LOAD = ma C LOAD = µf =.5V RDS ON (mω) 4 V IN =.8V V IN = 3.6V JUNCION EMPERAURE, J ( C) Figure 5. RDSON vs. emperature (Includes ~5 mω race Resistance) CH 5mV CH V M.µs A CH 99mV 3.µs Figure 8. ADP9 urn-on Delay, Input Voltage = 3.6 V I LOAD = ma I LOAD = ma I LOAD = 5mA I LOAD = 35mA I LOAD = 5mA =.8V I LOAD = ma C LOAD = µf =.5V RDS ON (mω) V IN (V) CH 5mV CH V M4µs A CH 99mV µs Figure 6. RDSON vs. Input Voltage, VIN (Includes ~5 mω race Resistance) Figure 9. ADP9 urn-on Delay, Input Voltage =.8 V V IN =.V V IN =.8V V IN =.5V V IN = 3.6V DIFFERENCE (mv) 4 I IN LOAD (ma) Figure 7. Voltage Drop vs. Load Current (Includes ~5 mω race Resistance) CH.V CH3.V CH ma M.µs A CH.4V.% Figure. ADP9 urn-on Delay and Inrush Current vs. Input Voltage = 3.6 V Rev. D Page 7 of 6

8 I IN GROUND CURREN (µa) I LOAD = ma I LOAD = ma I LOAD = 5mA I LOAD = 35mA I LOAD = 5mA 3.8 CH.V CH3.V CH 5.mA M4.µs A CH.4V.% JUNCION EMPERAURE, J ( C) Figure. ADP9 urn-on Delay and Inrush Current vs. Input Voltage =.8 V Figure 4. Ground Current vs. emperature GROUND CURREN (µa) I LOAD = ma I LOAD = ma I LOAD = 5mA I LOAD = 35mA I LOAD = 5mA 3.8 CH.V CH3.V CH 5.mA Mµs A CH mv.% Figure. ADP9 urn-off Delay, Input Voltage = 3.6 V V IN (V) Figure 5. Ground Current vs. Input Voltage, VIN SHUDOWN CURREN (µa) V IN =.V V IN =.8V V IN =.5V V IN = 3.6V 3. CH.V CH3 5mV CH 5.mA Mµs A CH mv.% JUNCION EMPERAURE, J ( C) Figure 3. ADP9 urn-off Delay, Input Voltage =.8 V Figure 6. Shutdown Current vs. emperature Rev. D Page 8 of 6

9 HEORY OF OPERAION he are high-side PMOS load switches. hey are designed for supply operation from. V to 3.6 V. he PMOS load switch is designed for low on resistance, 5 mω at VIN =.8 V, and supports 5 ma of continuous current. It is a low ground current device with a nominal 4 MΩ pull-down resistor on its enable pin. he package is a space-saving.8 mm.8 mm, 4-ball WLCSP. he ADP9 incorporates an internal output discharge resistor to discharge the output capacitance when the ADP9 output is disabled. he ADP9 also contains circuitry to limit the switch turn-on slew rate to limit the inrush current. VIN GND VIN GND EN ADP9 LEVEL SHIF AND SLEW RAE CONROL VOU Figure 7. ADP9 Functional Block Diagram ADP VOU EN LEVEL SHIF AND SLEW RAE CONROL AND LOAD DISCHARGE Figure 8. ADP9 Functional Block Diagram Rev. D Page 9 of 6

10 APPLICAIONS INFORMAION GROUND CURREN he major source for ground current in the is the 4 MΩ pull-down on the enable (EN) pin. Figure 9 shows typical ground current when VEN = VIN and VIN varies from. V to 3.6 V...8 V IN = 3.6V (V) GROUND CURREN (µa) V IN =.5V V IN =.8V V IN =.V 5 LOAD (ma) 5 Figure 9. Ground Current vs. Load Current As shown in Figure, an increase in ground current can occur when VEN VIN. his is caused by the CMOS logic nature of the level shift circuitry as it translates an EN signal. V to a logic high. his increase is a function of the VIN VEN delta. I GND (µa) = 3.6V =.8V (V) ENABLE FEAURE Figure. ypical Ground Current when VEN VIN he use the EN pin to enable and disable the VOU pin under normal operating conditions. As shown in Figure, when a rising voltage on EN crosses the active threshold, VOU turns on. When a falling voltage on EN crosses the inactive threshold, VOU turns off (V) Figure. ypical EN Operation As shown in Figure, the EN pin has built-in hysteresis. his prevents on/off oscillations that can occur due to noise on the EN pin as it passes through the threshold points. he EN pin active/inactive thresholds derive from the VIN voltage; therefore, these thresholds vary with changing input voltage. Figure shows typical EN active/inactive thresholds when the input voltage varies from. V to 3.6 V. YPICAL EN HRESHOLDS (V) EN ACIVE V IN (V) EN INACIVE Figure. ypical EN Pin hresholds vs. Input Voltage, VIN IMING urn-on delay is defined as the delta between the time that EN reaches >. V until VOU rises to ~% of its final value. he include circuitry to set the typical.5 μs turnon delay at 3.6 V VIN to limit the VIN inrush current. As shown in Figure 3, the turn-on delay is dependent on the input voltage Rev. D Page of 6

11 I LOAD = ma C LOAD = µf = 3.6V =.5V =.8V =.V 3 I IN =.8V I LOAD = ma C LOAD = µf = 3.6V CH V CH V M4µs A CH.34V 5.96µs Figure 3. ADP9 ypical urn-on Delay ime with Varying Input Voltage = 3.6V CH V CH V Mµs A CH.3V CH3.mA Ω 4.6µs Figure 5. ADP9 ypical Rise ime and Inrush Current with CLOAD = μf INPU VOLAGE (V) =.8V =.8V I IN. =.V IME (µs) Figure 4. ADP9 ypical urn-on Delay ime with Varying Input Voltage he rise time is defined as the delta between the time from % to 9% of VOU reaching its final value. It is dependent on the RC time constant where C = load capacitance (CLOAD) and R = RDSON RLOAD. Because RDSON is usually smaller than RLOAD, an adequate approximation for RC is RDSON CLOAD. he ADP9/ ADP9 do not need any input or load capacitor, but capacitors can be used to suppress noise on the board. If significant load capacitance is connected, inrush current is a concern. he ADP9 contains circuitry to limit the slew rate of the switch turn to reduce the turn on inrush current. See Figure 5 and Figure 6 for a comparison of rise time and inrush current CH.V CH ma M.µs A CH.4V CH3.V.% Figure 6. ADP9 ypical Rise ime and Inrush Current with CLOAD = μf 3 I IN =.8V I LOAD = ma C LOAD = 4.7µF = 3.6V CH V CH V Mµs A CH.V CH3.mA Ω 39.8µs Figure 7. ADP9 ypical Rise ime and Inrush Current with CLOAD = 4.7 μf Rev. D Page of 6

12 he turn-off time is defined as the delta between the time from 9% to % of VOU reaching its final value. It is also dependent on the RC time constant. he ADP9 incorporates an internal output discharge resistor to discharge the output capacitance when the ADP9 output is disabled. See Figure 8 and Figure 9 for a comparison of turnoff times. =.8V = 3.6V I LOAD = ma, C LOAD = µf I LOAD = ma, C LOAD = 4.7µF I LOAD = ma, C LOAD = µf CH V CH 5mV Mµs A CH V 3.36µs Figure 8. ADP9 ypical urn-off ime, Various Load Currents 3 CH.V CH3 5mV Mµs A CH mv.% Figure 9. ADP9 ypical urn-off ime, Load Current = ma HERMAL CONSIDERAIONS In most applications, the do not dissipate much heat due to their low on-channel resistance. However, in applications with high ambient temperature and load current, the heat dissipated in the package can be large enough to cause the junction temperature of the die to exceed the maximum junction temperature of 5 C. he junction temperature of the die is the sum of the ambient temperature of the environment and the temperature rise of the package due to the power dissipation, as shown in Equation o guarantee reliable operation, the junction temperature of the must not exceed 5 C. o ensure that the junction temperature stays below this maximum value, the user must be aware of the parameters that contribute to junction temperature changes. hese parameters include ambient temperature, power dissipation in the power device, and thermal resistances between the junction and ambient air (θja). he θja value is dependent on the package assembly compounds that are used and the amount of copper used to solder the package GND pin to the PCB. able 6 shows typical θja values of the 4-ball WLCSP for various PCB copper sizes. able 7 shows the typical ΨJB value of the 4-ball WLCSP. able 6. ypical θja Values for WLCSP Copper Size (mm ) θja ( C/W) Device soldered to minimum size pin traces. able 7. ypical ΨJB Values Package ΨJB Unit 4-Ball WLCSP 58.4 C/W he junction temperature of the can be calculated from the following equation: J = A + (PD θja) () where: A is the ambient temperature. PD is the power dissipation in the die, given by PD = [(VIN VOU) ILOAD] + (VIN IGND) () where: ILOAD is the load current. IGND is the ground current. VIN and VOU are the input and output voltages, respectively. Power dissipation due to ground current is quite small and can be ignored. herefore, the junction temperature equation simplifies to the following: J = A + {[(VIN VOU) ILOAD] θja} (3) As shown in Equation 3, for a given ambient temperature, inputto-output voltage differential, and continuous load current, there exists a minimum copper size requirement for the PCB to ensure that the junction temperature does not rise above 5 C. Figure 3 to Figure 35 show junction temperature calculations for different ambient temperatures, load currents, VIN to VOU differentials, and areas of PCB copper. Rev. D Page of 6

13 4 MAX JUNCION EMPERAURE 4 MAX JUNCION EMPERAURE JUNCION EMPERAURE, J ( C) 4 LOAD CURREN = ma LOAD CURREN = ma LOAD CURREN = 5mA LOAD CURREN = 5mA LOAD CURREN = 75mA LOAD CURREN = ma LOAD CURREN = 5mA V IN (V) Figure 3. 5 mm of PCB Copper, A = 5 C JUNCION EMPERAURE, J ( C) 4 LOAD CURREN = ma LOAD CURREN = ma LOAD CURREN = 5mA LOAD CURREN = 5mA LOAD CURREN = 75mA LOAD CURREN = ma LOAD CURREN = 5mA V IN (V) Figure mm of PCB Copper, A = 5 C MAX JUNCION EMPERAURE 4 MAX JUNCION EMPERAURE JUNCION EMPERAURE, J ( C) JUNCION EMPERAURE, J ( C) 4 LOAD CURREN = ma LOAD CURREN = ma LOAD CURREN = 5mA LOAD CURREN = 5mA LOAD CURREN = 75mA LOAD CURREN = ma LOAD CURREN = 5mA V IN (V) 4 4 Figure 3. mm of PCB Copper, A = 5 C MAX JUNCION EMPERAURE LOAD CURREN = ma LOAD CURREN = ma LOAD CURREN = 5mA LOAD CURREN = 5mA LOAD CURREN = 75mA LOAD CURREN = ma LOAD CURREN = 5mA V IN (V) Figure 3. mm of PCB Copper, A = 5 C JUNCION EMPERAURE, J ( C) JUNCION EMPERAURE, J ( C) 4 4 LOAD CURREN = ma LOAD CURREN = ma LOAD CURREN = 5mA LOAD CURREN = 5mA LOAD CURREN = 75mA LOAD CURREN = ma LOAD CURREN = 5mA V IN (V) 4 Figure 34. mm of PCB Copper, A = 5 C MAX JUNCION EMPERAURE LOAD CURREN = ma LOAD CURREN = ma LOAD CURREN = 5mA LOAD CURREN = 5mA LOAD CURREN = 75mA LOAD CURREN = ma LOAD CURREN = 5mA V IN (V) Figure 35. mm of PCB Copper, A = 5 C Rev. D Page 3 of 6

14 In cases where the board temperature is known, use the thermal characterization parameter, ΨJB, to estimate the junction temperature rise. Maximum junction temperature (J) is calculated from the board temperature (B) and power dissipation (PD) using the formula J = B + (PD ΨJB) (4) 4 JUNCION EMPERAURE, J ( C) 4 LOAD CURREN = ma LOAD CURREN = ma LOAD CURREN = 5mA LOAD CURREN = 5mA LOAD CURREN = 75mA LOAD CURREN = ma LOAD CURREN = 5mA MAX JUNCION EMPERAURE Figure 37. ADP9 PCB Layout V IN (V) Figure 36. B = 85 C PCB LAYOU CONSIDERAIONS Improve heat dissipation from the package by increasing the amount of copper attached to the pins of the. However, as listed in able 6, a point of diminishing returns is eventually reached, beyond which an increase in the copper size does not yield significant heat dissipation benefits. It is critical to keep the input and output traces as wide and as short as possible to minimize the circuit board trace resistance Figure 38. ADP9 PCB Layout Rev. D Page 4 of 6

15 OULINE DIMENSIONS..7 SQ SEAING PLANE BALL A IDENIFIER OP VIEW (BALL SIDE DOWN) BALL PICH.5 NOM COPLANARIY...4 Figure Ball Wafer Level Chip Scale Package [WLCSP] (CB-4-3) Dimensions shown in millimeters BOOM VIEW (BALL SIDE UP) A B 59-A ORDERING GUIDE Model emperature Range Package Description Package Option Branding ADP9ACBZ-R7 4 C to +85 C 4-Ball Wafer Level Chip Scale Package [WLCSP] CB-4-3 4D ADP9ACBZ-R7 4 C to +85 C 4-Ball Wafer Level Chip Scale Package [WLCSP] CB-4-3 4G ADP9CB-EVALZ Evaluation Board ADP9CB-EVALZ Evaluation Board Z = RoHS Compliant Part. Rev. D Page 5 of 6

16 NOES 9- Analog Devices, Inc. All rights reserved. rademarks and registered trademarks are the property of their respective owners. D7874--/(D) Rev. D Page 6 of 6

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