RF4C050AP. V DSS -20V R DS(on) (Max.) 26mΩ I D ±10A P D 2W. Pch -20V -10A Middle Power MOSFET Datasheet

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1 RF4C050AP Pch -20V -10A Middle Power MOSFET Datasheet V DSS -20V R DS(on) (Max.) 26mΩ I D ±10A l 外形図 HUML2020L8 P D 2W DFN2020-8S l 特長 1) 低オン抵抗 2) 小型ハイパワーパッケージ (HUML2020L8) 3) 鉛フリー対応済み RoHS 準拠 4) ハロゲンフリー l 内部回路図 l 包装仕様 包装形態 Embossed Tape リールサイズ (mm) 180 l 用途 タイプテープ幅 (mm) 8 スイッチング 基本発注単位 ( 個 ) 3000 ロードスイッチテーピングコード TR l 絶対最大定格 (T a = 25 C) 標印 Parameter Symbol Value Unit ドレイン ソース間電圧 V DSS -20 V ドレイン電流 ( 直流 ) I D ±10 A ドレイン電流 ( パルス ) I D,pulse *1 ±20 A ゲート ソース間電圧 V GSS 0~-8 V 許容損失 P D *2 2 W ジャンクション温度 T j 150 保存温度 T stg -55 ~ +150 SJ 2015 ROHM Co., Ltd. All rights reserved. 1/ Rev.002

2 l 熱抵抗 Parameter Symbol Values Min. Typ. Max. 熱抵抗 ( ジャンクション 外気間 ) R thja * /W Unit l 電気的特性 (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit ドレイン ソース降伏電圧 V (BR)DSS V GS = 0V, I D = -1mA V ドレイン ソース降伏電圧温度係数 ΔV (BR)DSS I D = -1mA ΔT j referenced to mv/ ドレイン遮断電流 I DSS V DS = -20V, V GS = 0V μa ゲート漏れ電流 I GSS V GS = -8V, V DS = 0V μa ゲートしきい値電圧 V GS(th) V DS = -10V, I D = -1mA V ゲートしきい値電圧温度係数 ドレイン ソース間オン抵抗 ΔV GS(th) I D = -1mA ΔT j referenced to 25 R DS(on) * mv/ V GS = -4.5V, I D = -5.0A V GS = -2.5V, I D = -2.5A V GS = -1.8V, I D = -2.5A V GS = -1.5V, I D = -1.0A 順伝達アドミタンス Y fs *3 V DS = -10V, I D = -5.0A S mω *1 Pw 10μs, Duty cycle 1% *2 40mm 40mm 銅箔基板実装時 *3 パルス負荷 2015 ROHM Co., Ltd. All rights reserved. 2/ Rev.002

3 l 電気的特性 (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit 入力容量 C iss V GS = 0V 出力容量 C oss V DS = -10V 帰還容量 C rss f = 1MHz ターンオン遅延時間 t *3 d(on) V DD -10V,V GS = -4.5V 上昇時間 t *3 r I D = -2.5A ターンオフ遅延時間 t *3 d(off) R L 4.02Ω 下降時間 t *3 f R G = 10Ω pf ns lゲート電荷量特性 (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit ゲート総電荷量 Q *3 g V DD -10V, ゲート ソース間電荷量 Q *3 gs I D = -5.0A, ゲート ドレイン間電荷量 Q *3 gd V GS = -4.5V nc l 内部ダイオード特性 ( ソース ドレイン間 ) (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit ソース電流 ( 直流 ) I S A T a = 25 ソース電流 ( パルス ) I *1 SP A 順方向電圧 V *3 SD V GS = 0V, I S = -1.6A V 2015 ROHM Co., Ltd. All rights reserved. 3/ Rev.002

4 l 電気的特性曲線 Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation 2015 ROHM Co., Ltd. All rights reserved. 4/ Rev.002

5 l 電気的特性曲線 Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics 2015 ROHM Co., Ltd. All rights reserved. 5/ Rev.002

6 l 電気的特性曲線 Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Tranceconductance vs. Drain Current Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 2015 ROHM Co., Ltd. All rights reserved. 6/ Rev.002

7 l 電気的特性曲線 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 2015 ROHM Co., Ltd. All rights reserved. 7/ Rev.002

8 l 電気的特性曲線 Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(Ⅳ) Fig.18 Static Drain - Source On - State Resistance vs. Drain Current(Ⅴ) Fig.19 Typical Capacitance vs. Drain - Source Voltage Fig.20 Switching Characteristics 2015 ROHM Co., Ltd. All rights reserved. 8/ Rev.002

9 l 電気的特性曲線 Fig.21 Dynamic Input Characteristics Fig.22 Source Current vs. Source Drain Voltage 2015 ROHM Co., Ltd. All rights reserved. 9/ Rev.002

10 l 測定回路図 図 1-1 スイッチング時間測定回路 図 1-2 スイッチング波形 図 2-1 ゲート電荷量測定回路 図 2-2 ゲート電荷量波形 2015 ROHM Co., Ltd. All rights reserved. 10/ Rev.002

11 l 外形寸法図 2015 ROHM Co., Ltd. All rights reserved. 11/ Rev.002

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