Defect mediated detection of wavelengths around 1550 nm in a ring resonant structure

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1 Defect mediated detection of wavelengths around 1550 nm in a ring resonant structure A P Knights* a, J K Doylend a, D F Logan a, J J Ackert a, P E Jessop b, P Velha c, M Sorel c and R M De La Rue c a Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S4L7, Canada; b Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario, N2L 3C5 Canada; c Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G128AT, United Kingdom. ABSTRACT In this paper we outline recent results which combine defect mediated Photo-Detectors (PDs) in a Ring Resonator (RR) structure. By exploiting the multiple-pass of the optical signal through the detector, we are able to significantly decrease the size of the detector structure while maintaining good responsivity (typically 0.1 A/W). In such a geometry the detector bandwidth is not capacitance limited, while the leakage current is reduced toward 1 na. We also show that these PDs may be used in the drop port of a RR to monitor the propagating signal. These devices have applicability in multiplexing and potential for integration with high speed modulation functionality. Keywords: Detector; Ring resonator; Multiplexing; Ion implantation. 1. INTRODUCTION In recent years the development of defect mediated, monolithic waveguide detectors in SOI photonic circuits has been explored by a growing number of research groups [for example see 1, 2]. This approach is attractive due to the straightforward fabrication of the sub-bandgap responsive element. The competitive application of defect mediated devices to broadband, quasi-dc power monitoring has been proven [3] with a report of 0.001A/W/dB for a detector fabricated using a commercial facility. The use of defect mediated detection for other applications, particularly those requiring high responsivity and bandwidth, has been overshadowed somewhat by the high performance of Ge integrated on SOI [4] or hybrid III-V integration. Although there have been reports of defect mediated waveguide detectors with responsivity in excess of 1A/W and bandwidth >20GHz [5], the widespread adoption of the monolithic approach has still yet to be accepted, probably because of concerns over device footprint and corresponding bandwidth limitations. In this paper we outline recent results which combine defect mediated detectors into ring resonant structures. Previous work from our group has shown the feasibility of defect mediated ring resonant sub-bandgap detection. For example, Doylend et al. used optical lithography to fabricate ring resonant detectors in which boron implantation was used to introduce defects [6], whereas Logan et al. utilized electron beam lithography and inert silicon ion implantation to create deeplevels to facilitate the detection process [7]. We describe here two device geometries which integrate PDs and RRs in a single silicon photonic circuit using a process that is completely compatible with CMOS processing. 1.1 Defect Mediated Sub-band Detection for Silicon Photonics A Complementary Metal Oxide Semiconductor (CMOS) compatible process that allows for the increase in the subbandgap absorption of light in a silicon waveguide is required in devices that use light at a wavelength of around 1550 nm. That process technology should provide control on the degree of optical mode absorption, so that both power monitoring [1] and end-line detection [4, 5] can be achieved. In the former, a fraction of the light is sampled without perturbing the remainder - and then used as a diagnostic of the chip performance at selected points on the circuit. The latter is a more straightforward device that efficiently performs Optical/Electrical (OE) conversion with sufficient efficiency and speed. *aknight@mcmaster.ca; x27224 Silicon Photonics VI, edited by Joel A. Kubby, Graham T. Reed, Proc. of SPIE Vol. 7943, SPIE CCC code: X/11/$18 doi: / Proc. of SPIE Vol

2 In the case of terminal detection, silicon-based devices in the C and L-bands have employed germanium, hybrid integration of III-V materials, or defect-mediated sub-band detection. The last technology listed offers significant advantages in processing simplicity and hence integration, since it can be incorporated into a diode through the addition of ion implantation and low temperature annealing (usually after all other processing has taken place). The defects required to generate charge carriers are generally stable at temperatures up to ~250 o C. Although silicon has a bandgap of 1.1 ev and is essentially transparent to wavelengths around 1550 nm (thus rendering silicon an excellent waveguide material for these wavelengths), introduced energy states within the bandgap (such as those due to chemical deep levels or point defects) allow sub-band photons to be absorbed via the Shockley-Read-Hall process [8]. For a relatively short length of material which contains a uniform distribution of defects, mid-gap electronic mediated carrier generation will be proportional to the incident optical power according to: i = P( z) γ dz (1) ph where i ph is photocurrent, dz is the propagation length, P(z) is optical power - and γ represents the carrier generation efficiency of the deep-level states and is a function of deep-level density, optical absorption cross-section, photon energy and the proportion of photo-generated carriers successfully extracted by an integrated photodiode. The optical power then decreases exponentially with device length according to: z Pz ( ) = P e α (2) inc Integrating over the device length L yields the total photocurrent: P γ α L ( 1 e α ) inc ph = (3). i Thus, for an absorption of 45 db/cm (α = cm -1 ), the photocurrent will be dependent on device length, up to 1 cm - after which two thirds of the optical power will have been absorbed. Further device length provides steadily diminishing additional photocurrent. 1.2 Configurations of Integrated Photodetectors and Ring-Resonators The ability to combine PDs with wavelength selection offers the possibility of an array of functional devices with applications in optical interconnection, telecommunication - and bio-, chemical and mechanical sensing (for instance the development of compact spectrometers). Furthermore, specific to defect mediated detection, the limitations set by the relatively low cross-section of defects introduced into a silicon waveguide (and the subsequent requirement for a relatively long detector dimension) are significantly relaxed if the detector can be directly incorporated into a RR structure. In fact, it has been shown that for such a structure operating in the critical coupling regime, the responsivity of the PD is independent of device length if the loss of the RR is dominated by the absorption of the PD [6]. This then allows for the fabrication of PD s using defect mediated absorption, with a footprint that is dictated only by the size of the RR. In this paper we describe work which has been performed by our group on the integration of photodiodes and ring resonators. Two configurations are described: (1) Incorporation of the PD within the RR; and (2) Incorporation of the PD on the drop-port of a RR. The former is shown to significantly increase the effective responsivity of the PD at resonant wavelengths while the latter is able to monitor the dropped power by absorbing a fraction of the light propagating in the silicon waveguide. These two configurations are shown schematically in figure 1. Proc. of SPIE Vol

3 a PD incorporated with RR Throughport PD b Drop-port PD Figure 1 Schematic description of the two device configurations described in this work. In (a), the PD is integrated directly into the RR (the hashed areas represent the location og the doped regions of the PD); while in (b), the PDs are represented as simple blocks. 2. DEVICE FABRICATION AND CHARACTERIZATION Device fabrication was performed either via a silicon photonic shuttle run (see below) or through electron-beam lithography at the University of Glasgow. Both approaches are described below. 2.1 Fabrication via Shuttle Run Fabrication was facilitated by CMC Microsystems, Canada, and carried out at either LETI or IMEC. Silicon-on-insulator (SOI) <100> wafers with a top silicon thickness of 220 nm and 2 µm buried oxide were etched 170 nm to form optical rib waveguides with a thin slab for electrical contact. Low energy phosphorus and boron implantation on either side of the waveguide, followed by an activation anneal, was used to form p-i-n diodes for charge extraction. After contact metallization, the devices were masked with a thick resist and implanted with boron at 350 kev to a dose of 1x10 13 cm 2 to introduce volume defects. At this energy, the boron is situated below the buried oxide - and so takes no part in the device operation beyond the introduction of defects during its implantation. In order to characterize the effects of implantation damage on the RR spectra, a fraction of the devices was implanted to a dose of 3x10 14 cm -2. The contact metallization was also used to incorporate a metal trace running across the ring for resonance tuning using the thermooptic effect. Grating couplers were incorporated onto the bus waveguide to ensure efficient introduction and extraction of light from an SMF fiber. A schematic of the device is shown in figure 2. Thermo-optic tuner photodiode defects 60 μm Figure 2 Layout of the device structure fabricated via shuttle run. Proc. of SPIE Vol

4 2.2 Fabrication via Electron-beam Lithography A Leica VB-6 electron-beam writer was used to define 500-nm-wide waveguides in 300 nm-thick HSQ resist on a 220 nm-thick Si-overlayer, SOI substrate. The waveguides were etched to a depth of 150 nm using an SF-based inductively coupled plasma. After subsequent dry thermal growth of a 50 nm thick oxide layer at 1000oC, a 50 nm silicon slab remained in the regions surrounding the waveguide. Boron was implanted to form a p-type region in the slab in the center of the ring, at a distance of 500 nm from the inner edge of the waveguide. Phosphorus was implanted to form an n-type region over a 140o arc -and also at a distance of 500 nm from the outer edge of the ring. The device was then annealed at 1000oC for one minute, in order to activate the dopants. Aluminum was used to form electrical contacts to the p- and n-doped regions of the slab. A schematic of the device is shown in Figure 3a, while a scanning electron microscope (SEM) surface image is shown as Figure 3b. Windows were opened over the entire ring as well as a 50 µm length of the bus and implanted with 190 kev Si ions to a dose of 1x1013 cm-2, to form sufficient damage to increase substantially the optical absorption. In addition to those located within the rings, p-i-n diodes were also formed on straight waveguide sections, with lengths varying from 0.2 to 8 mm. The samples were cleaved to form optical facets suitable for end-fire fiber coupling. From measurement of the transmission loss of the straight photodiode sections, the extracted excess loss was determined to be approximately 170 db.cm-1 (dominated by the introduction of the lattice defects). A subsequent 5 min anneal, at 325oC in N2 removed/modified the implantation-induced defects to reduce the excess optical absorption to 10.8 db.cm-1. Figure 3 Layout of the PD/RR integrated device structure fabricated by electron-beam lithography. 3. RESULTS AND DISCUSSION 3.1 Effect of Implantation Damage on the Spectral Response of Passive Ring Resonators It has been demonstrated previously that damage introduced by ion-implantation increases both the real part of the refractive index of silicon and the optical absorption [9]. It is necessary therefore to understand the impact of inert ion implantation on the characteristics of ring resonators such as the conditions for critical coupling. This is described more fully in reference [6], and will be the subject of a comprehensive future publication. Here we restrict ourselves to the observation of the measured spectra from samples prepared in the shuttle run via IMEC. These are shown in Figure 4 as spectra observed external to the device, measured via the output grating coupler. These devices did not integrate a p-i-n diode with the RR - and are therefore purely passive. Following the silicon etch step to define the RR, a window was opened in a photoresist mask which coincided with one third of the circumference of the ring - and was not coincident with the coupling region. The samples were them implanted with 350keV B+ ions to a dose of 3x1014cm-2. Following annealing at the temperatures indicated in Figure 4, the response of the RR to light across a single FSR was determined. Proc. of SPIE Vol

5 A clear evolution of the response is observed. The positions of the resonance peaks shift to higher wavelengths after the ion implantation - and are subsequently returned towards the pre-implantation response following annealing at 250 o C. The evolving width of the resonant peaks is consistent with a situation of round-trip loss being dominated by the ion implantation damage in the low temperature annealed sample. The shape of the peak becomes sharper and deeper as more of this damage is removed and the device is returned towards a situation of critical coupling Power (dbm) o C 250 o C 100 o C Wavelength (nm) Figure 4 Response of RR following implantation of B+ ions and subsequent annealing as indicated on the figure. 3.2 Integrated PD and RR Figure 5 shows the response of the integrated device shown in conceptual form in Figure 1a - and in more detail in Figure 2. In this case, optical absorption leads to charge separation and O/E conversion E-04 output power (dbm) coupled optical output photocurrent 1.0E E E E-08 photocurrent (A) E-09 wavelength (nm) Figure 5 Output from bus waveguide plotted together with integrated PD response for the shuttle fabricated devices. All the processing for this device was performed at LETI during an epixfab shuttle run in The optical throughput resonance FWHM is 75 pm at nm, consistent with a Q factor of The directional coupler k was measured independently using passive devices and was found to be between 2% and 7% at 1550 nm. A quantitative explanation of the fitting of this data, together with a discussion on bandwidth limitations and signal-to-noise ratio is given in reference [6]. The responsivity of these devices for on-resonance detection is > 0.1 A/W for a reverse bias of 10 V. The corresponding dark current is 0.2 na. Proc. of SPIE Vol

6 Figure 6 shows the response of a similar device, described by Figure 3. In this case the device was formed via electronbeam lithography. Photocurrent (na) Wavelength (nm) -20V -10V -5V Figure 6 Integrated PD response for the e-beam fabricated devices. The reverse bias condition is indicated in each case. A linear relationship between the measured photocurrent and the estimated on-chip optical power allows calculation of the responsivity for the detectors of approximately 40mA/W at -20V reverse bias. The dark current of the detectors is 1.1 na at 20 V reverse bias, but increases to 175 na when off-resonant wavelength light is present, indicating some detection of light propagating in the waveguide bus - and probably accounts for the wider measured spectral response (not shown) of the detectors, compared to the drop spectrum measured at the output of the bus. The variation in responsivity with reverse bias is an indication of the increase in overlap of the propagating mode and the diode depletion width. 3.3 PD Integrated with Drop Port The final result reported here is for the device which is shown in conceptual design in Figure 1b, i.e. with the PD integrated with the drop port of the RR. There are two significant differences with this design compared with that for the integrated PD-RR device. First, there is no requirement to allow in the device design for the excess loss of the detector; second the device can be designed as a tap monitor such that it samples a small fraction of the dropped light at the drop port allowing the majority to pass unperturbed. There is also the possibility (as with all defect mediated detection) to design these detectors as temporary wafer-scale test structures which can be removed prior to final packaging by a low temperature (~450 o C) anneal. Figure 7 shows the response of the RR as sampled by the PD (biased at -10V) integrated with the drop port. The device was fabricated using the electron-beam lithography process previously described. Compared with the data shown in Figure 7, the spectrum appears somewhat less noisy, a probable indication of the lack of light leaking into the detector, as compared with the situation for the integrated PD-RR design. 4. SUMMARY This paper has provided a description of previously proposed concepts by our group and preliminary results of defect mediated photodetectors and micro-ring resonators. It has been shown that the effective responsivity of the detectors can be considerably increased over devices of a similar size by exploiting the high Q-factor of the ring design. In an alternative application, we have demonstrated the integration with the drop port of a ring resonator device. Given the flexibility of utility for defect mediated detection (i.e. as a terminal detector or as a power monitor) and its potential for multi-ghz bandwidth operation, the potential for these types of device in WDM applications appears to be considerable. Proc. of SPIE Vol

7 Photodetector Current (A) 1.0E E E Wavelength (nm) Figure 7 Response of PD on drop port, as described by figure 1b. ACKNOWLEDGEMENTS The authors would like to thank Doug Bruce and Richard Jones for useful discussions, Dan Deptuck for help with mask and process design, Brad Robinson for help with test setup and Doris Stevanovic for device fabrication. The authors would also like to acknowledge the support of CMC Microsystems, the Natural Sciences and Engineering Research Council of Canada, and the Canadian Institute for Photonic Innovations. We also acknowledge the support of the James Watt Nanofabrication Centre at the University of Glasgow. REFERENCES [1] J B D Bradley, P E Jessop, A P Knights, Silicon waveguide integrated optical power monitor with enhanced sensitivity at 1550 nm, Appl. Phys. Lett., 86, p (2005). [2] H. Chen, X. Luo, A. W. Poon, Cavity-enhanced photocurrent generation by 1.55 um wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator, Appl. Phy. Lett., 95, (2009). [3] J.K. Doylend, A.P. Knights, B.J. Luff, R. Shafiiha, M. Asghari, R.M. Gwilliam, Modifying functionality of variable optical attenuator to signal monitoring through defect engineering, IET Electr. Lett., 46, 3 (2010). [4] M. Morse, O. Dosunmu, G. Sarid, Y. Chetrit, Performance of Ge-on-Si p-i-n photodetectors for standard receiver modules, IEEE Photonics Technol. Lett., 18, pp (2006). [5] M. W. Geis, S. J. Spector, M. E. Grein, J. U. Yoon, D. M. Lennon, and T. M. Lyszczarz. Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW -1 response, Optics Express, 17, 5193 (2009). [6] J. K. Doylend, P. E. Jessop, and A. P. Knights. Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection, Optics Express, 18, (2010). [7] D. F. Logan, P. Velha, M. Sorel, R. M. De La Rue, A. P. Knights and P. E. Jessop, Defect-enhanced Silicon-on-insulator Waveguide Resonant Photodetector with High Sensitivity at 1.55μm, Photonics Technology Letters 22, 1530 (2010). [8] D F Logan, P E Jessop and A P Knights, Modeling Defect Enhanced Detection at 1550 nm in Integrated Silicon Waveguide Photodetectors, Jnl. Lightwave Tech. 27, 930 (2009). [9] A P Knights, K J Dudeck, W D Walters, and P G Coleman, Modification of silicon waveguide structures using ion implantation induced defects Appl. Surf. Science, 75, 255 (2008). Proc. of SPIE Vol

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