DE71/DE110 POWER ELECTRONICS DEC 2015

Size: px
Start display at page:

Download "DE71/DE110 POWER ELECTRONICS DEC 2015"

Transcription

1 Q.2 a. What is power loss in an ideal switch? Explain the conduction losses in a bipolar junction transistor with the help of circuit diagram. (8) Answer: IETE 1

2 b. Explain, how the power diode must be protected against the following:-(8) (i) Overvoltage (ii) Overcurrent (iii) Transients Answer: IETE 2

3 Q.3 a. How does a Power Bipolar Junction Transistor used as a switch? Draw its V- I characteristics and explain the significance of saturation, active and cut-off regions. (8) Answer: IETE 3

4 IETE 4

5 IETE 5

6 IETE 6

7 b. A Power MOSFET has I DSS = 2 ma, R DS(ON) = 0.3 Ω, duty cycle d = 50%, I D = 6 A, V DS = 100 V, t r = 100 ns and t f = 200 ns. If the frequency of switching is 40 KHz, then find (8) (i) on-state loss (ii) off-state loss (iii) turn-on switching loss (iv) turn-off switching loss Answer: Given Data I DSS = 2 ma, R DS(ON) = 0.3 Ω, duty cycle (d) = 50%, I D = 6 A, VDS = 100 V, t r = 100 ns, t f = 200 ns and frequency of switching(f) = 40 khz 1 1 The Time Period (T) = = = 25 µ S f 3 40(10 ) T Therefore, t ON = t OFF = = 12.5 µ S 2 IETE 7

8 t (i) On-State Loss (P ON ) = I 2 D R ON DS(ON) = T 6 X 0.3X12.5( (10 ) 2 6 ) = 5.4 W. 3) 6 t (ii) Off-State Loss (P OFF ) =V DS(max) I OFF 100X 2(10 X12.5(10 ) DSS = 6 T 25(10 ) (iii) Turn-on Switching Loss (P SW(ON) ) = 9 VDS (max) I Dtr 100X 6X100(10 ) 3 X f = X 40(10 ) = 0.4 W. 6 6 (iv) Turn-off Switching Loss (P SW(OFF) ) = 9 VDS (max) I Dt f 100X 6X 200(10 ) 3 X f = X 40(10 ) = 0.8 W. 6 6 = 0.1W Q.4 a. What is the necessity of connecting two SCRs in parallel? Draw the circuit of connecting two SCRs in parallel and explain its operation with the help of onstate characteristics. (9) Answer: IETE 8

9 b. What are the most common methods of achieving commutation? Explain the commutation method by external source and explain its operation with the help of waveforms. (7) Answer: IETE 9

10 1. Capacitor Commutation 2. Commutation by Resonance 3. AC Line Commutation IETE 10

11 Q.5 a. Draw a neat diagram for Single Phase Full Wave Controlled Bridge Rectifier with a resistive load and explain its operation with the help of waveforms. (10) Answer: IETE 11

12 IETE 12

13 IETE 13

14 b. A single phase half wave controlled rectifier connected to a 150 V, 60 Hz source to supplying a resistive load of 10 Ω. If the delay angle α is30, then find: (i) the maximum load current (ii) the average load current (6) Answer: Given Data: VS = 150 V, f = 60 Hz, Resistive Load (R) = 10 Ω and Delay Angle (α ) = 30 Peak Load Voltage = V m = 2 V S = X 150 = 212 V. V (i) Maximum Load Current (I m ) = m 212 = = A R 10 ( I )(1 + cosα) (ii) Average Load Current = m (21.2)(1 + cos30 ) = = 6.3A 2π 2π Q.6 a. Draw a neat diagram for Three Phase Half Wave Controlled Rectifier circuit with a resistive load and explain its operation with waveforms. (10) Answer: IETE 14

15 IETE 15

16 IETE 16

17 b. A six pulse half controlled bridge rectifier is connected to a three phase 220 V AC source. Calculate the firing angle if the terminal voltage of the rectifier is 240 V. What is the maximum value of the DC output voltage? (6) Answer: Given that the terminal voltage of the rectifier (V o(avg.) ) = 240 V and the source voltage V L(S) = 220 V 220 V = 311 V. Therefore, the maximum voltage (V L(m) ) = 2 ( ) L(S ) (i) The formula for finding of Firing Angle ( ) VO( 3. V 2π 240VX 2π 3X 311V Hence ( + ) = = = cosα avg.) L( m) So that ( cos α ) = Therefore, the Firing Angle ( α ) = 52 V = 2 ( ) 3 2π α is ( V ) V ( 1 cosα ) O( avg.) = L( m) + (ii) Maximum value of DC output voltage is obtained with ( α = 0 ) is given by IETE 17

18 3 ( V )( 1+ cosα ) = ( 311)( 1+ 1) V 3 VO(max) = L( m) = 297 2π 2π Q.7 a. What is a DC Chopper? Explain its principle with the help of suitable diagram and waveforms. What are its various industrial applications? (8) Answer: IETE 18

19 IETE 19

20 IETE 20

21 b. What is a Buck-Boost Chopper? Draw its circuit configuration and explain its working with the help of voltage and current waveforms. (8) Answer: IETE 21

22 IETE 22

23 IETE 23

24 IETE 24

25 Q.8 a. Explain the working of a full bridge VSI with a neat circuit diagram and waveforms. (8) Answer: IETE 25

26 IETE 26

27 IETE 27

28 b. What are the most commonly used methods of pulse width modulation? Explain multiple pulse width modulation with the help of waveforms when the number of pulses (m) = 2 and 3. (8) Answer: IETE 28

29 IETE 29

30 Q.9 a. What do you mean by AC power control? Discuss the differences between integral cycle control and AC phase control. (8) Answer: IETE 30

31 IETE 31

32 IETE 32

33 IETE 33

34 IETE 34

35 b. Compare the advantages and disadvantages of semiconductor switches over mechanical switches. (8) Answer: IETE 35

36 IETE 36

37 IETE 37

38 IETE 38

39 IETE 39

40 TEXT BOOK I. Power Electronics for Technology, First Impression (2006), Ashfaq Ahmed, Purdue University - Calumet, Pearson Education IETE 40

(a) average output voltage (b) average output current (c) average and rms values of SCR current and (d) input power factor. [16]

(a) average output voltage (b) average output current (c) average and rms values of SCR current and (d) input power factor. [16] Code No: 07A50204 R07 Set No. 2 1. A single phase fully controlled bridge converter is operated from 230 v, 50 Hz source. The load consists of 10Ω and a large inductance so as to reach the load current

More information

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING Power Diode EE2301 POWER ELECTRONICS UNIT I POWER SEMICONDUCTOR DEVICES PART A 1. What is meant by fast recovery

More information

6. Explain control characteristics of GTO, MCT, SITH with the help of waveforms and circuit diagrams.

6. Explain control characteristics of GTO, MCT, SITH with the help of waveforms and circuit diagrams. POWER ELECTRONICS QUESTION BANK Unit 1: Introduction 1. Explain the control characteristics of SCR and GTO with circuit diagrams, and waveforms of control signal and output voltage. 2. Explain the different

More information

ELEC4240/ELEC9240 POWER ELECTRONICS

ELEC4240/ELEC9240 POWER ELECTRONICS THE UNIVERSITY OF NEW SOUTH WALES FINAL EXAMINATION JUNE/JULY, 2003 ELEC4240/ELEC9240 POWER ELECTRONICS 1. Time allowed: 3 (three) hours 2. This paper has six questions. Answer any four. 3. All questions

More information

Power Electronics (BEG335EC )

Power Electronics (BEG335EC ) 1 Power Electronics (BEG335EC ) 2 PURWANCHAL UNIVERSITY V SEMESTER FINAL EXAMINATION - 2003 The figures in margin indicate full marks. Attempt any FIVE questions. Q. [1] [a] A single phase full converter

More information

UNIVERSITY QUESTIONS. Unit-1 Introduction to Power Electronics

UNIVERSITY QUESTIONS. Unit-1 Introduction to Power Electronics UNIVERSITY QUESTIONS Unit-1 Introduction to Power Electronics 1. Give the symbol and characteristic features of the following devices. (i) SCR (ii) GTO (iii) TRIAC (iv) IGBT (v) SIT (June 2012) 2. What

More information

Power Electronics (Sample Questions) Module-1

Power Electronics (Sample Questions) Module-1 Module-1 Short Questions (Previous Years BPUT Questions 1 to 18) 1. What are the conditions for a thyristor to conduct? di 2. What is the common method used for protection? dt 3. What is the importance

More information

DC Chopper. Prof. Dr. Fahmy El-khouly

DC Chopper. Prof. Dr. Fahmy El-khouly DC Chopper Prof. Dr. Fahmy El-khouly Definitions: The power electronic circuit which converts directly from dc to dc is called dc-to-dc converter or dc-chopper. Chopper is a dc to dc transformer: The input

More information

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M) SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave

More information

11. Define the term pinch off voltage of MOSFET. (May/June 2012)

11. Define the term pinch off voltage of MOSFET. (May/June 2012) Subject Code : EE6503 Branch : EEE Subject Name : Power Electronics Year/Sem. : III /V Unit - I PART-A 1. State the advantages of IGBT over MOSFET. (Nov/Dec 2008) 2. What is the function of snubber circuit?

More information

Chapter 6 Soft-Switching dc-dc Converters Outlines

Chapter 6 Soft-Switching dc-dc Converters Outlines Chapter 6 Soft-Switching dc-dc Converters Outlines Classification of soft-switching resonant converters Advantages and disadvantages of ZCS and ZVS Zero-current switching topologies The resonant switch

More information

ELEC387 Power electronics

ELEC387 Power electronics ELEC387 Power electronics Jonathan Goldwasser 1 Power electronics systems pp.3 15 Main task: process and control flow of electric energy by supplying voltage and current in a form that is optimally suited

More information

EE POWER ELECTRONICS

EE POWER ELECTRONICS EE6503 - POWER ELECTRONICS UNIT III - DC TO DC CONVERTER PART A 1.What is meant by time ratio or PWM control (duty cycle) of a DC chopper? (M/J16) The ratio of a period to the total time period is known

More information

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad I INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad-000 DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING TUTORIAL QUESTION BANK Course Name : POWER ELECTRONICS Course Code : AEE0

More information

ELG3336: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives!

ELG3336: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives! ELG3336: Power Electronics Systems Objective To Realize and Design arious Power Supplies and Motor Drives! Power electronics refers to control and conversion of electrical power by power semiconductor

More information

VALLIAMMAI ENGINEERING COLLEGE DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION

VALLIAMMAI ENGINEERING COLLEGE DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION VALLIAMMAI ENGINEERING COLLEGE DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION Sem / Branch : V /EIE Subject code /Title: EI2301/Industrial Electronics UNIT-1 POWER DEVICES 1. What are the different methods

More information

Appendix: Power Loss Calculation

Appendix: Power Loss Calculation Appendix: Power Loss Calculation Current flow paths in a synchronous buck converter during on and off phases are illustrated in Fig. 1. It has to be noticed that following parameters are interrelated:

More information

AC Theory and Electronics

AC Theory and Electronics AC Theory and Electronics An Alternating Current (AC) or Voltage is one whose amplitude is not constant, but varies with time about some mean position (value). Some examples of AC variation are shown below:

More information

DHANALAKSHMI SRINIVASAN COLLEGE OF ENGINEERING AND TECHNOLY Mamallapuram chennai

DHANALAKSHMI SRINIVASAN COLLEGE OF ENGINEERING AND TECHNOLY Mamallapuram chennai DHANALAKSHMI SRINIVASAN COLLEGE OF ENGINEERING AND TECHNOLY Mamallapuram chennai DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING QUESTION BANK V SEMESTER EE6503 - POWER ELECTRONICS Regulation 2013

More information

Subject Code: Model Answer Page No: / N

Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

The typical ratio of latching current to holding current in a 20 A thyristor is (A) 5.0 (B) 2.0 (C) 1.0 (D) 0.5

The typical ratio of latching current to holding current in a 20 A thyristor is (A) 5.0 (B) 2.0 (C) 1.0 (D) 0.5 CHAPTER 9 POWER ELECTRONICS YEAR 0 ONE MARK MCQ 9. MCQ 9. A half-controlled single-phase bridge rectifier is supplying an R-L load. It is operated at a firing angle α and the load current is continuous.

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) DMOS DUAL FULL BRIDGE DRIVER SUPPLY VOLTAGE UP TO 48V R DS(ON) 1.2Ω L6204 (25 C) CROSS CONDUCTION PROTECTION THERMAL SHUTDOWN 0.5A DC CURRENT TTL/CMOS COMPATIBLE DRIVER HIGH EFFICIENCY CHOPPING MULTIPOWER

More information

Dr.Arkan A.Hussein Power Electronics Fourth Class. Commutation of Thyristor-Based Circuits Part-I

Dr.Arkan A.Hussein Power Electronics Fourth Class. Commutation of Thyristor-Based Circuits Part-I Commutation of Thyristor-Based Circuits Part-I ١ This lesson provides the reader the following: (i) (ii) (iii) (iv) Requirements to be satisfied for the successful turn-off of a SCR The turn-off groups

More information

Sample Exam Solution

Sample Exam Solution Session 44; 1/6 Sample Exam Solution Problem 1: You are given a single phase diode rectifier, as shown below. Do the following: L d I s v (t) s L s C d V d Load : 310V Xs : 0.4ohm at 400 Hz Vspk : 360V

More information

ECEN4797/5797 Lecture #11

ECEN4797/5797 Lecture #11 ECEN4797/5797 Lecture #11 Announcements On-campus students: pick up graded HW2, turn in HW3 Homework 4 is due in class on Friday, Sept. 23. The grace-period for offcampus students expires 5pm (Mountain)

More information

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder R. W. Erickson Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder Inclusion of Switching Loss in the Averaged Equivalent Circuit Model The methods of Chapter 3 can

More information

Operating Junction and 55 to +175 C Storage Temperature Range

Operating Junction and 55 to +175 C Storage Temperature Range Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage

More information

SIMULATION STUDIES OF HALF-BRIDGE ISOLATED DC/DC BOOST CONVERTER

SIMULATION STUDIES OF HALF-BRIDGE ISOLATED DC/DC BOOST CONVERTER POZNAN UNIVE RSITY OF TE CHNOLOGY ACADE MIC JOURNALS No 80 Electrical Engineering 2014 Adam KRUPA* SIMULATION STUDIES OF HALF-BRIDGE ISOLATED DC/DC BOOST CONVERTER In order to utilize energy from low voltage

More information

High Voltage DC Transmission 2

High Voltage DC Transmission 2 High Voltage DC Transmission 2 1.0 Introduction Interconnecting HVDC within an AC system requires conversion from AC to DC and inversion from DC to AC. We refer to the circuits which provide conversion

More information

( ) ON s inductance of 10 mh. The motor draws an average current of 20A at a constant back emf of 80 V, under steady state.

( ) ON s inductance of 10 mh. The motor draws an average current of 20A at a constant back emf of 80 V, under steady state. 1991 1.12 The operating state that distinguishes a silicon controlled rectifier (SCR) from a diode is (a) forward conduction state (b) forward blocking state (c) reverse conduction state (d) reverse blocking

More information

Design of a Cell Charger for an ipad Using Full Bridge Rectifier and Flyback Converter

Design of a Cell Charger for an ipad Using Full Bridge Rectifier and Flyback Converter Design of a Cell Charger for an ipad Using Full Bridge Rectifier and Flyback Converter 1 Ali Saleh Aziz, 2 Riyadh Nazar Ali 1, 2 Assistant Lecturer 1, 2 Department of Medical Instruments Techniques Engineering

More information

UNIT-III STATOR SIDE CONTROLLED INDUCTION MOTOR DRIVE

UNIT-III STATOR SIDE CONTROLLED INDUCTION MOTOR DRIVE UNIT-III STATOR SIDE CONTROLLED INDUCTION MOTOR DRIVE 3.1 STATOR VOLTAGE CONTROL The induction motor 'speed can be controlled by varying the stator voltage. This method of speed control is known as stator

More information

MICROCONTROLLER BASED BOOST PID MUNAJAH BINTI MOHD RUBAEE

MICROCONTROLLER BASED BOOST PID MUNAJAH BINTI MOHD RUBAEE MICROCONTROLLER BASED BOOST PID MUNAJAH BINTI MOHD RUBAEE This thesis is submitted as partial fulfillment of the requirement for the award of Bachelor of Electrical Engineering (Power System) Faculty of

More information

POWER ELECTRONICS PO POST GRAD POS UATE 2010 AC Ch AC o Ch p o per Prepare Prep d are by: d Dr. Gamal Gam SOwilam SOwila 11 December 2016 ١

POWER ELECTRONICS PO POST GRAD POS UATE 2010 AC Ch AC o Ch p o per Prepare Prep d are by: d Dr. Gamal Gam SOwilam SOwila 11 December 2016 ١ POWER ELECTRONICS POST GRADUATE 2010 AC Chopper Prepared by: Dr. Gamal SOwilam 11 December 2016 ١ 1. Introduction AC Chopper is An AC to AC Converter employs to vary the rms voltage across the load at

More information

POWER ELECTRONICS. Alpha. Science International Ltd. S.C. Tripathy. Oxford, U.K.

POWER ELECTRONICS. Alpha. Science International Ltd. S.C. Tripathy. Oxford, U.K. POWER ELECTRONICS S.C. Tripathy Alpha Science International Ltd. Oxford, U.K. Contents Preface vii 1. SEMICONDUCTOR DIODE THEORY 1.1 1.1 Introduction 1.1 1.2 Charge Densities in a Doped Semiconductor 1.1

More information

POWER ELECTRONICS LAB

POWER ELECTRONICS LAB MUFFAKHAM JAH COLLEGE OF ENGINEERING & TECHNOLOGY Banjara Hills Road No 3, Hyderabad 34 www.mjcollege.ac.in DEPARTMENT OF ELECTRICAL ENGINEERING LABORATORY MANUAL POWER ELECTRONICS LAB For B.E. III/IV

More information

Class D Audio Amplifier Design

Class D Audio Amplifier Design Class D Audio Amplifier Design Class D Amplifier Introduction Theory of Class D operation, topology comparison Gate Driver How to drive the gate, key parameters in gate drive stage MOSFET How to choose,

More information

Power Electronics. Contents

Power Electronics. Contents Power Electronics Overview Contents Electronic Devices Power, Electric, Magnetic circuits Rectifiers (1-ph, 3-ph) Converters, controlled rectifiers Inverters (1-ph, 3-ph) Power system harmonics Choppers

More information

WPT2N32 WPT2N32. Descriptions. Features. Applications. Order information. Http//:

WPT2N32 WPT2N32. Descriptions. Features. Applications. Order information. Http//: Single, PNP, -30V, -A, Power Transistor with 20V N-MOSFET Http//:www.willsemi.com Descriptions The is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit

More information

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS UNIT-I - PN DIODEAND ITSAPPLICATIONS 1. What is depletion region in PN junction?

More information

POWER ELECTRONICS LAB MANUAL

POWER ELECTRONICS LAB MANUAL JIS College of Engineering (An Autonomous Institution) Department of Electrical Engineering POWER ELECTRONICS LAB MANUAL Exp-1. Study of characteristics of an SCR AIM: To obtain the V-I characteristics

More information

EXPERIMENT 4 SWITCHED MODE DC/DC CONVERSION USING BUCK CONVERTER

EXPERIMENT 4 SWITCHED MODE DC/DC CONVERSION USING BUCK CONVERTER Introduction: YEDITEPE UNIERSITY ENGINEERING & ARHITETURE FAULTY INDUSTRIAL ELETRONIS LABORATORY EE 432 INDUSTRIAL ELETRONIS EXPERIMENT 4 SWITHED MODE D/D ONERSION USING BUK ONERTER In this experiment,

More information

EEL 5245 POWER ELECTRONICS I Lecture #4: Chapter 2 Switching Concepts and Semiconductor Overview

EEL 5245 POWER ELECTRONICS I Lecture #4: Chapter 2 Switching Concepts and Semiconductor Overview EEL 5245 POWER ELECTRONICS I Lecture #4: Chapter 2 Switching Concepts and Semiconductor Overview Objectives of Lecture Switch realizations Objective is to focus on terminal characteristics Blocking capability

More information

18 N Amps, 500 Volts N-CHANNEL MOSFET. Power MOSFET DESCRIPTION FEATURES SYMBOL

18 N Amps, 500 Volts N-CHANNEL MOSFET. Power MOSFET DESCRIPTION FEATURES SYMBOL Power MOSFET 8 Amps, 500 Volts NCHANNEL MOSFET DESCRIPTION The YR 8N50 are NChannel enhancement mode power field effect transistors (MOSFET) which are produced using YR s proprietary,planar stripe, DMOS

More information

Experiment DC-DC converter

Experiment DC-DC converter POWER ELECTRONIC LAB Experiment-7-8-9 DC-DC converter Power Electronics Lab Ali Shafique, Ijhar Khan, Dr. Syed Abdul Rahman Kashif 10/11/2015 This manual needs to be completed before the mid-term examination.

More information

IRF130, IRF131, IRF132, IRF133

IRF130, IRF131, IRF132, IRF133 October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche

More information

University of Washington Department of Electrical Engineering EE 351: Introduction to Energy Devices and Systems. Lab 1: Power Electronic Converters

University of Washington Department of Electrical Engineering EE 351: Introduction to Energy Devices and Systems. Lab 1: Power Electronic Converters University of Washington Department of Electrical Engineering EE 351: Introduction to Energy Devices and Systems Lab 1: Power Electronic Converters Introduction With the development of power electronic

More information

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder R. W. Erickson Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder pn junction! Junction diode consisting of! p-doped silicon! n-doped silicon! A p-n junction where

More information

International Journal of Advance Engineering and Research Development

International Journal of Advance Engineering and Research Development Scientific Journal of Impact Factor (SJIF): 4.72 International Journal of Advance Engineering and Research Development Volume 4, Issue 8, August -2017 e-issn (O): 2348-4470 p-issn (P): 2348-6406 Analysis

More information

N & P-Channel 100-V (D-S) MOSFET

N & P-Channel 100-V (D-S) MOSFET N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives

More information

TSP13N 50M / TSF13N N50M

TSP13N 50M / TSF13N N50M TSP13N50M / TSF13N50M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

Super Junction MOSFET

Super Junction MOSFET 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche

More information

Module 3. DC to DC Converters. Version 2 EE IIT, Kharagpur 1

Module 3. DC to DC Converters. Version 2 EE IIT, Kharagpur 1 Module 3 DC to DC Converters Version 2 EE IIT, Kharagpur 1 Lesson 2 Commutation of Thyristor-Based Circuits Part-II Version 2 EE IIT, Kharagpur 2 This lesson provides the reader the following: (i) (ii)

More information

List of Experiments. 1. Steady state characteristics of SCR, IGBT and MOSFET. (Single phase half wave rectifier). (Simulation and hardware).

List of Experiments. 1. Steady state characteristics of SCR, IGBT and MOSFET. (Single phase half wave rectifier). (Simulation and hardware). (Scheme-2013) List of Experiments 1. Steady state characteristics of SCR, IGBT and MOSFET 2. nalog and digital firing methods for SCR (Single phase half wave rectifier). (Simulation and hardware). 3. Full

More information

ELG4139: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives!

ELG4139: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives! ELG4139: Power Electronics Systems Objective To Realize and Design Various Power Supplies and Motor Drives! Power electronics refers to control and conversion of electrical power by power semiconductor

More information

EE204 Basic Electronics and Electric Power Course Notes Energy Sources and Power Conversion

EE204 Basic Electronics and Electric Power Course Notes Energy Sources and Power Conversion Energy Sources and Power Conversion This Section will discuss some of the ways energy is provided to electronic and electromechanical devices In most cases, the voltages required for various purposes are

More information

Fundamentals of Power Electronics

Fundamentals of Power Electronics Fundamentals of Power Electronics SECOND EDITION Robert W. Erickson Dragan Maksimovic University of Colorado Boulder, Colorado Preface 1 Introduction 1 1.1 Introduction to Power Processing 1 1.2 Several

More information

FREQUENTLY ASKED QUESTIONS

FREQUENTLY ASKED QUESTIONS FREQUENTLY ASKED QUESTIONS UNIT-1 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS SUBJECT CODE : EC6202 BRANCH: EEE PART -A 1. What is meant by diffusion current in a semi conductor? (APR/MAY 2010, 2011, NOV/DEC

More information

Super Junction MOSFET

Super Junction MOSFET APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv

More information

Other Electronic Devices

Other Electronic Devices Other Electronic Devices 1 Contents Field-Effect Transistors(FETs) - JFETs - MOSFETs Insulate Gate Bipolar Transistors(IGBTs) H-bridge driver and PWM Silicon-Controlled Rectifiers(SCRs) TRIACs Device Selection

More information

IRGBC30M Short Circuit Rated Fast IGBT

IRGBC30M Short Circuit Rated Fast IGBT INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, V GE = 5V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs.

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

Module 1. Power Semiconductor Devices. Version 2 EE IIT, Kharagpur 1

Module 1. Power Semiconductor Devices. Version 2 EE IIT, Kharagpur 1 Module 1 Power Semiconductor Devices Version EE IIT, Kharagpur 1 Lesson 8 Hard and Soft Switching of Power Semiconductors Version EE IIT, Kharagpur This lesson provides the reader the following (i) (ii)

More information

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder R. W. Erickson Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder 18.5 RMS values of rectifier waveforms Doubly-modulated transistor current waveform, boost rectifier:

More information

Name of chapter & details

Name of chapter & details Course Title Course Code Power Electronics-I EL509 Lecture : 03 / 03 Course Credit / Hours Practical : 01 / 02 Tutorial : 00 / 00 Course Learning Outcomes Total : 04 / 05 At the end of the session student

More information

Chapter 1 INTRODUCTION TO POWER ELECTRONICS SYSTEMS

Chapter 1 INTRODUCTION TO POWER ELECTRONICS SYSTEMS Chapter 1 INTRODUCTION TO POWER ELECTRONICS SYSTEMS Definition and concepts Application Power semiconductor switches Gate/base drivers Losses Snubbers 1 Definition of Power Electronics DEFINITION: To convert,

More information

SINGLE-STAGE HIGH-POWER-FACTOR SELF-OSCILLATING ELECTRONIC BALLAST FOR FLUORESCENT LAMPS WITH SOFT START

SINGLE-STAGE HIGH-POWER-FACTOR SELF-OSCILLATING ELECTRONIC BALLAST FOR FLUORESCENT LAMPS WITH SOFT START SINGLE-STAGE HIGH-POWER-FACTOR SELF-OSCILLATING ELECTRONIC BALLAST FOR FLUORESCENT S WITH SOFT START Abstract: In this paper a new solution to implement and control a single-stage electronic ballast based

More information

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a

More information

Improvements of LLC Resonant Converter

Improvements of LLC Resonant Converter Chapter 5 Improvements of LLC Resonant Converter From previous chapter, the characteristic and design of LLC resonant converter were discussed. In this chapter, two improvements for LLC resonant converter

More information

International Journal of Scientific & Engineering Research, Volume 5, Issue 3, March-2014 ISSN

International Journal of Scientific & Engineering Research, Volume 5, Issue 3, March-2014 ISSN 332 An Improved Bridgeless SEPIC PFC Converter N. Madhumitha, Dr C. Christober Asir Rajan Department of Electrical & Electronics Engineering Pondicherry Engineering College madhudeez@pec.edu, asir_70@pec.edu

More information

13. DC to AC Converters

13. DC to AC Converters 13. DC to AC Converters Inverters Inverter is a device which converts DC voltages (or current) to AC voltages (or current).inverter converting voltage is called VOLTAGE SOURCE INVERTER (VSI), while inverter

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

Development of a Single-Phase PWM AC Controller

Development of a Single-Phase PWM AC Controller Pertanika J. Sci. & Technol. 16 (2): 119-127 (2008) ISSN: 0128-7680 Universiti Putra Malaysia Press Development of a Single-Phase PWM AC Controller S.M. Bashi*, N.F. Mailah and W.B. Cheng Department of

More information

Single-Phase Full-Wave Phase-Controlled Rectifier

Single-Phase Full-Wave Phase-Controlled Rectifier + 2004.10.09 EE410L, Experiment #1 Brett Allan I. Introduction The objective of this experiment is to design, construct, and test a Single-Phase Full-Wave Phase-Controlled Rectifier. The subsequent block

More information

Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions

More information

Features. Symbol JEDEC TO-204AA GATE (PIN 1)

Features. Symbol JEDEC TO-204AA GATE (PIN 1) Semiconductor BUZB Data Sheet October 998 File Number 9. [ /Title (BUZ B) /Subject A, V,. hm, N- hannel ower OS- ET) /Author ) /Keyords Harris emionducor, N- hannel ower OS- ET, O- AA) /Creator ) /DOCIN

More information

Lecture 19 - Single-phase square-wave inverter

Lecture 19 - Single-phase square-wave inverter Lecture 19 - Single-phase square-wave inverter 1. Introduction Inverter circuits supply AC voltage or current to a load from a DC supply. A DC source, often obtained from an AC-DC rectifier, is converted

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Lecture 41 SIMPLE AVERAGING OVER T SW to ACHIEVE LOW FREQUENCY MODELS

Lecture 41 SIMPLE AVERAGING OVER T SW to ACHIEVE LOW FREQUENCY MODELS Lecture 41 SIMPLE AVERAGING OVER T SW to ACHIEVE LOW FREQUENCY MODELS. Goals and Methodology to Get There 0. Goals 0. Methodology. BuckBoost and Other Converter Models 0. Overview of Methodology 0. Example

More information

AN2170 APPLICATION NOTE MOSFET Device Effects on Phase Node Ringing in VRM Power Converters INTRODUCTION

AN2170 APPLICATION NOTE MOSFET Device Effects on Phase Node Ringing in VRM Power Converters INTRODUCTION AN2170 APPLICATION NOTE MOSFET Device Effects on Phase Node Ringing in VRM Power Converters INTRODUCTION The growth in production volume of industrial equipment (e.g., power DC-DC converters devoted to

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

DEVELOPMENT OF A GATE DRIVE WITH OVERCURRENT PROTECTION CIRCUIT USING IR2110 FOR FAST SWITCHING HALF- BRIDGE CONVERTER

DEVELOPMENT OF A GATE DRIVE WITH OVERCURRENT PROTECTION CIRCUIT USING IR2110 FOR FAST SWITCHING HALF- BRIDGE CONVERTER DEVELOPMENT OF A GATE DRIVE WITH OVERCURRENT PROTECTION CIRCUIT USING IR2110 FOR FAST SWITCHING HALF- BRIDGE CONVERTER R. Baharom, K. S. Muhammad, M. N. Seroji and M. K. M. Salleh Faculty of Electrical

More information

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 ) SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET

More information

AOL1422 N-Channel Enhancement Mode Field Effect Transistor

AOL1422 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and

More information

EEL 646 POWER ELECTRONICS II. Issa Batarseh. January 13, 2015

EEL 646 POWER ELECTRONICS II. Issa Batarseh. January 13, 2015 EEL 646 POWER ELECTRONICS II Issa Batarseh January 13, 2015 Agenda About the course Syllabus Review Course Topics Review of Power Electronics I Questions Introduction (cont d) Introduction (cont d) 5

More information

CHAPTER 2 DESIGN AND MODELING OF POSITIVE BUCK BOOST CONVERTER WITH CASCADED BUCK BOOST CONVERTER

CHAPTER 2 DESIGN AND MODELING OF POSITIVE BUCK BOOST CONVERTER WITH CASCADED BUCK BOOST CONVERTER 17 CHAPTER 2 DESIGN AND MODELING OF POSITIVE BUCK BOOST CONVERTER WITH CASCADED BUCK BOOST CONVERTER 2.1 GENERAL Designing an efficient DC to DC buck-boost converter is very much important for many real-time

More information

Questions from the same exercise can be combined together to increase difficulty. Which one of the following properties of the diode is NOT true:

Questions from the same exercise can be combined together to increase difficulty. Which one of the following properties of the diode is NOT true: Questions from the same exercise can be combined together to increase difficulty. 21 1 Which one of the following properties of the diode is NOT true: a) When no voltage is applied across the diode, it

More information

L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)

L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source) L.107.4 MOSFETS, IDENTIFICATION, CURVES. PAGE 1 I. Review of JFET (DRAW symbol for n-channel type, with grounded source) 1. "normally on" device A. current from source to drain when V G = 0 no need to

More information

INVESTIGATION OF GATE DRIVERS FOR SNUBBERLESS OVERVOLTAGE SUPPRESSION OF POWER IGBTS

INVESTIGATION OF GATE DRIVERS FOR SNUBBERLESS OVERVOLTAGE SUPPRESSION OF POWER IGBTS INVESTIGATION OF GATE DRIVERS FOR SNUBBERLESS OVERVOLTAGE SUPPRESSION OF POWER IGBTS Alvis Sokolovs, Iļja Galkins Riga Technical University, Department of Power and Electrical Engineering Kronvalda blvd.

More information

235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength

235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Code No: R Set No. 1

Code No: R Set No. 1 Code No: R05010204 Set No. 1 I B.Tech Supplimentary Examinations, Aug/Sep 2007 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering,

More information

POWER ELECTRONICS. Converters, Applications, and Design. NED MOHAN Department of Electrical Engineering University of Minnesota Minneapolis, Minnesota

POWER ELECTRONICS. Converters, Applications, and Design. NED MOHAN Department of Electrical Engineering University of Minnesota Minneapolis, Minnesota POWER ELECTRONICS Converters, Applications, and Design THIRD EDITION NED MOHAN Department of Electrical Engineering University of Minnesota Minneapolis, Minnesota TORE M. UNDELAND Department of Electrical

More information

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

More information

ZCS-PWM Converter for Reducing Switching Losses

ZCS-PWM Converter for Reducing Switching Losses IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-issn: 2278-1676,p-ISSN: 2320-3331, Volume 9, Issue 1 Ver. III (Jan. 2014), PP 29-35 ZCS-PWM Converter for Reducing Switching Losses

More information

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high

More information

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6 Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.

More information

LINEAR IC APPLICATIONS

LINEAR IC APPLICATIONS 1 B.Tech III Year I Semester (R09) Regular & Supplementary Examinations December/January 2013/14 1 (a) Why is R e in an emitter-coupled differential amplifier replaced by a constant current source? (b)

More information

A Highly Versatile Laboratory Setup for Teaching Basics of Power Electronics in Industry Related Form

A Highly Versatile Laboratory Setup for Teaching Basics of Power Electronics in Industry Related Form A Highly Versatile Laboratory Setup for Teaching Basics of Power Electronics in Industry Related Form JOHANN MINIBÖCK power electronics consultant Purgstall 5 A-3752 Walkenstein AUSTRIA Phone: +43-2913-411

More information

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition. Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions:

More information