HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01

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1 查询供应商 PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES Super Low Noise Figure & High Associated Gain NF = 0.8 db TYP., Ga = 11 db TYP. at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200µm ORDERING INFORMATION Part Number Package Supplying Form Marking -T1 6-pin super minimold Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape V73 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID IDSS ma Gate Current IG 100 µa Total Power Dissipation Ptot 125 mw Channel Temperature Tch 125 C Storage Temperature Tstg 65 to +125 C The information in this document is subject to change without notice. Document No. P13682EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan 1998

2 RECOMMENDED OPERATING CONDITION (TA = 25 C) Characteristic Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 2 3 V Drain Current ID ma Input Power Pin +5 dbm ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V µa Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V ma Gate to Source Cutoff Voltage VGS(off) VDS = 2 V, ID = 100 µa V Transconductance gm VDS = 2 V, ID = 10 ma ms Noise Figuer NF f = 12 GHz VDS = 2 V f = 4 GHz ID = 10 ma 0.4 db Associated Gain Ga f = 12 GHz db f = 4 GHz Preliminary Data Sheet

3 PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) to ± ±0.1 0 to ± ±0.1 PIN CONNECTIONS (Top View) (Bottom View) Pin No. Pin Name 3 2 V Gate 2 Source 3 Source 4 Drain Source 6 Source Preliminary Data Shee 3

4 TYPICAL CHARACTERISTICS (TA = 25 C) Ptot - Total Power Dissipation - mw TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE ID - Drain Current - ma DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V 0.2 V 0.4 V 0.6 V TA - Ambient Temperature - C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 24 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY ID - Drain Current - ma VDS = 2 V MSG. - Maximum Stable Gain - db MAG. - Maximum Available Gain - db S21s 2 - Forward Insertion Gain - db S21S 2 MSG. VDS = 2 V ID = 10 ma MAG. VGS - Gate to Source Voltage - V f - Frequency - GHz 4 Preliminary Data Sheet

5 Gain Calculations S21 S12 MSG. = K = S11 2 S S12 S21 S21 S12 MAG. = (K ± K 2 1) = S11 S22 S21 S NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY Ga VDS = 2 V ID = 10 ma NF - Noise Figure - db Ga - Associated Gain - db NF f - Frequency - GHz Preliminary Data Shee 5

6 S-PARAMETER MAG. AND ANG. VDS = 2 V, ID = 10 ma FREQUENCY S11 S21 S12 S22 MHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) Preliminary Data Sheet

7 AMP. PARAMETERS VDS = 2 V, ID = 10 ma FREQUENCY GUmax GAmax S21 2 S12 2 K Delay Mason s U G1 G2 MHz db db db db ns db db db Preliminary Data Shee 7

8 NOISE PARAMETER VDS = 2 V, ID = 10 ma Freq. (GHz) NFmin. (db) Ga (db) MAG. Γopt. ANG. (deg.) Rn/ Preliminary Data Sheet

9 RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Metod Infrared Reflow VPS Wave Soldering Soldering Conditions Package peak temperature: 230 C or below Time: 30 seconds or less (at 210 C) Count: 2, Exposure limit Note : None Package peak temperature: 215 C or below Time: 40 seconds or less (at 200 C) Count: 2, Exposure limit Note : None Soldering bath temperature: 260 C or below Time: 10 seconds or less Count: 1, Exposure limit Note : None Recommended Condtion Symbol IR VP WS Partial Heating Pin temperature: 230 C Time: 10 seconds or less (per pin row) Exposure limit Note : None Note After opening the dry pack, keep it in a place below 25 C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. For more details, refer to our document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Preliminary Data Shee 9

10 [MEMO] 10 Preliminary Data Sheet

11 [MEMO] Preliminary Data Shee 11

12 CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M

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GSM/GPRS. By Mendy Ouzillou Silicon Laboratories Inc. Austin, TX GSM 3GPP (GSM) burst current) GSM900 DCS V

GSM/GPRS. By Mendy Ouzillou Silicon Laboratories Inc. Austin, TX GSM 3GPP (GSM) burst current) GSM900 DCS V GSM/GPRS By Mendy Ouzillou Silicon Laboratories Inc. Austin, TX GSM Q ( ) 3GPP (GSM) burst current) GSM900 DCS1800 50 Ω 3.5 V 25 3.7 V www.silabs.com/pa-calculations 32.75 (GSM) dbm (DCS) 29.75 dbm 1-3)