High-Voltage, High-Current DUAL OPERATIONAL AMPLIFIER

Transcription

1 High-Voltage, High-Current DUL OPERTIONL MPLIFIER FETURES HIGH OUTPUT CURRENT: min WIDE POWER SUPPLY RNGE: ±V to ±3V SLEW RTE: 8V/µs INTERNL CURRENT LIMIT THERML SHUTDOWN PROTECTION FET INPUT: I = p max 8-PIN HERMETIC TO-3 ND -LED PLSTIC PCKGES PPLICTIONS MOTOR DRIVER PROGRMMLE POWER SUPPLY SERVO MPLIFIER VLVES, CTUTOR DRIVER MGNETIC DEFLECTION COIL DRIVER UDIO MPLIFIER DESCRIPTION The is a dual high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. It provides output current and power supply voltage range extends to ±3V. The integrates two high performance FET op amps with high power output stages on a single monolithic chip. Internal current limit and thermal shutdown protect the amplifier and load from damage. The is available in a hermetic 8-pin metal TO-3, and -lead plastic packages. Models are available in C to +8 C, and C to + C temperature ranges. V+ In +In 3 Out Case connected to V Supply. Out V TO-3 Package Electrically Isolated 6 7 +In Top View 8 In NC V+ V International irport Industrial Park Mailing ddress: PO ox Tucson, Z 873 Street ddress: 673 S. Tucson lvd. Tucson, Z 876 Tel: () 76- Twx: 9-9- Cable: RCORP Telex: FX: () 889- Immediate Product Info: (8) urr-rown Corporation PDS-9 Printed in U.S.. July, 99

2 SPECIFICTIONS t T CSE = + C and V S = ±3V, unless otherwise noted. T M SM PRMETER CONDITIONS MIN TYP MX MIN TYP MX UNITS OFFSET VOLTGE Input Offset Voltage ± ± * * mv vs Temperature Specified Temp. Range ± * µv/ C vs Power Supply V S = ±V to ±3V ± ± * * µv/v INPUT IS CURRENT () Input ias Current V CM = V ± ± * * p vs Temperature Doubles every C * Input Offset Current V CM = V ± ± * * p NOISE Input Voltage Noise Noise Density, f = khz 36 * nv/ Hz Current Noise Density, f = khz 3 * f/ Hz INPUT VOLTGE RNGE Common-Mode Input Range Positive Linear Operation (V+) 6 (V+) * * V Negative Linear Operation (V ) +6 (V ) + * * V Common-Mode Rejection V CM = ±V S -6V 9 6 * * d INPUT IMPEDNCE Differential 8 * Ω pf Common-Mode * Ω pf OPEN-LOOP GIN Open-Loop Voltage Gain V O = ±3V, R L = Ω 9 3 * * d FREQUENCY RESPONSE Gain-andwidth Product R L = Ω. * MHz Slew Rate 6Vp-p, R L = Ω 8 * * V/µs Full-Power andwidth See Typical Curve * Settling Time.% G =, 6V Step * µs Total Harmonic Distortion See Typical Curve * OUTPUT Voltage Output: Positive I O = (V+) (V+). * * V Negative I O = (V ) + (V ) +3.8 * * V Positive I O =. (V+). (V+) 3.8 * * V Negative I O =. (V ) + (V ) +3. * * V Current Output See SO Curves * Short-Circuit Current ± * POWER SUPPLY Specified Operating Voltage ±3 * V Operating Voltage Range ± ±3 * * V Quiescent Current (total) I O = ± ±3 * * m TEMPERTURE RNGE Operating Range +8 + C Storage, Metal TO-3 Package 6 + * * C Plastic Package + C Thermal Resistance, θ JC oth mplifiers, f > Hz * C/W Thermal Resistance, θ JC oth mplifiers, DC. * C/W Thermal Resistance, θ JC One mplifier, f > Hz.7 * C/W Thermal Resistance, θ JC One mplifier, DC 3 * C/W Thermal Resistance, θ J No Heat Sink 3 * C/W * Specifications same as M. NOTES: () High-speed test at T J = C. () Calculated from total power dissipation of both amplifiers. The information provided herein is believed to be reliable; however, URR-ROWN assumes no responsibility for inaccuracies or omissions. URR-ROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. URR-ROWN does not authorize or warrant any URR-ROWN product for use in life support devices and/or systems.

3 CONNECTION DIGRMS Top View TO 3 Front View -Lead Plastic V+ In +In 3 Out Case connected to V Supply. Out 8 In V 6 7 +In Case is electrically isolated. NC V+ V ORDERING INFORMTION TEMPERTURE MODEL PCKGE RNGE T -Lead Plastic C to +8 C M 8-Pin Metal TO-3 C to +8 C SM 8-Pin Metal TO-3 C to + C PCKGE INFORMTION PCKGE DRWING MODEL PCKGE NUMER () T -Lead Plastic M 8-Pin Metal TO-3 3 SM 8-Pin Metal TO-3 3 NOTE: () For detailed drawing and dimension table, please see end of data sheet, or ppendix D of urr-rown IC Data ook. US OEM PRICES MODEL T $.8 $.6 $. M SM SOLUTE MXIMUM RTINGS Supply Voltage, V+ to V... 7V Output Current... See SO Curve Input Voltage... (V ).7V to (V+) +.7V Operating Temperature... C to + C Storage Temperature, Metal TO-3 Package... C to + C Plastic Package... C to + C Junction Temperature... C Lead Temperature (soldering, s)... 3 C ELECTROSTTIC DISCHRGE SENSITIVITY This integrated circuit can be damaged by ESD. urr-rown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 3

4 DICE INFORMTION 7 6D 6C 6 6 PD FUNCTION 8, Out,, C, D V+ 3 +In In, Out 6, 6, 6C, 6D V 7 +In 8 In Substrate ias: Internally connected to V power supply. MECHNICL INFORMTION MILS (.") MILLIMETERS Die Size 8 x ± 8.8 x 9.9 ±.3 Die Thickness ±3. ±.8 Min. Pad Size x. x. C D 3 acking Chromium-Silver DIE TOPOGRPHY TYPICL PERFORMNCE CURVES T CSE = + C, V S = ±3V unless otherwise noted. OPEN-LOOP GIN ND PHSE vs FREQUENCY n INPUT IS CURRENT vs TEMPERTURE Gain (d) 8 6 R L = Ω Phase ( ) Input ias Current () n p p I I OS k k k M M p 7 7 Temperature ( C)

5 TYPICL PERFORMNCE CURVES (CONT) t T CSE = + C and V S = ±3V, unless otherwise noted. CURRENT LIMIT vs TEMPERTURE 6 QUIESCENT CURRENT vs TEMPERTURE Limit Current () 3 Quiescent Current (m) V S = ±V V S = ±3V 7 7 Temperature ( C) Temperature ( C) Voltage Noise (nv/ Hz) 8 6 VOLTGE NOISE DENSITY vs FREQUENCY Crosstalk (d) 6 8 CHNNEL CROSSTLK vs FREQUENCY 9kΩ kω Ω 9kΩ kω V X k k k k k k M COMMON-MODE REJECTION vs FREQUENCY POWER SUPPLY REJECTION vs FREQUENCY Common-Mode Rejection (d) Power Supply Rejection (d) 8 6 V Supply V+ Supply k k k M k k k M

6 TYPICL PERFORMNCE CURVES (CONT) t T CSE = + C and V S = ±3V, unless otherwise noted. Gain-andwidth Product (MHz).... GIN-NDWIDTH PRODUCT ND SLEW RTE vs TEMPERTURE SR+ SR Slew Rate (V/µS) Output Voltage (V) 3 3 MXIMUM OUTPUT VOLTGE vs FREQUENCY Clipping Slew Rate Limited Temperature ( C) k k k TOTL HRMONIC DISTORTION + NOISE vs FREQUENCY OUTPUT VOLTGE SWING vs OUTPUT CURRENT THD + N (%).. R L = Ω mw W 3W V SUPPLY V OUT (V) 3 (V+) V O (V ) V O. k k k 3 Output Current () 6 OUTPUT VOLTGE SWING vs TEMPERTURE V SUPPLY V OUT (V) 3 I O = + I O = +. I O = I O =. 7 7 Temperature ( C) 6

7 TYPICL PERFORMNCE CURVES (CONT) t T CSE = + C and V S = ±3V, unless otherwise noted. SMLL SIGNL RESPONSE G = 3, C L = nf LRGE SIGNL RESPONSE G = 3, R L = Ω mv/div V/div µs/div µs/div PPLICTIONS INFORMTION Figure shows the connected as a basic noninverting amplifier. The can be used in virtually any op amp configuration. Power supply terminals should be bypassed with low series impedance capacitors. The technique shown, using a ceramic and tantalum type in parallel, is recommended. Power supply wiring should have low series impedance and inductance. SFE OPERTING RE Stress on the output transistors is determined by the output current and the voltage across the conducting output transistor, V CE. The power dissipated by the output transistor is equal to the product of the output current and the voltage across the conducting transistor, V CE. The Safe Operating rea (SO curve, Figure ) shows the permissible range of voltage and current. V IN R kω µf.µf + +3V V+ R kω /.µf R G = + = 3 R V O Z L Output Current (). Output current may be limited to less than see text. SFE OPERTING RE Current-Limited T C = 8 C T C = C T C = C µf +. V S V O (V) V 3V FIGURE. asic Circuit Connections. FIGURE. Safe Operating rea. 7

8 The safe output current decreases as V CE increases. Output short-circuit is a very demanding case for SO. shortcircuit to ground forces the full power supply voltage (V+ or V ) across the conducting transistor. With V S = ±3V the safe output current is. (at C). The short-circuit current is approximately which exceeds the SO. This situation will activate the thermal shutdown circuit in the. For further insight on SO, consult -39. CURRENT LIMIT The has an internal current limit set for approximately. This current limit decreases with increasing junction temperature as shown in the typical curve, Current Limit versus Temperature. This, in combination with the thermal shutdown circuit, provides protection from many types of overload. It may not, however, protect for shortcircuit to ground, depending on the power supply voltage, ambient temperature, heat sink and signal conditions. POWER DISSIPTION Power dissipation depends on power supply, signal and load conditions. For DC signals, power dissipation is equal to the product of output current times the voltage across the conducting output transistor. Power dissipation can be minimized by using the lowest possible power supply voltage necessary to assure the required output voltage swing. For resistive loads, the maximum power dissipation occurs at a DC output voltage of one-half the power supply voltage. Dissipation with C signals is lower. pplication ulletin -39 explains how to calculate or measure power dissipation with unusual signals and loads. HETSINKING Most applications require a heat sink to assure that the maximum junction temperature is not exceeded. The heat sink required depends on the power dissipated and on ambient conditions. Consult pplication ulletin -38 for information on determining heat sink requirements. The case of the metal TO-3 model of the is electrically isolated from all circuitry and can be connected directly to a heat sink. This eliminates cumbersome insulating hardware that increases thermal resistance. Consult pplication ulletin -37 for proper mounting techniques and procedures for TO-3 power products. The heat sink tab of the plastic package is connected to the V power supply terminal. Lowest thermal resistance can be achieved by mounting the tab directly to a heat sink. If the heat sink cannot be electrically hot at V power supply potential, insulating hardware must be used. THERML PROTECTION The has thermal shutdown that protects the amplifier from damage. ny tendency to activate the thermal shutdown circuit during normal operation is indication of excessive power dissipation or an inadequate heat sink. The thermal protection activates at a junction temperature of approximately C. For reliable operation, junction temperature should be limited to C, maximum. To estimate the margin of safety in a complete design (including heat sink), increase the ambient temperature until the thermal protection is activated. Use worst-case load and signal conditions. For good reliability, the thermal protection should trigger more than C above the maximum expected ambient condition of your application. This produces a junction temperature of C at the maximum expected ambient condition. Depending on load and signal conditions, the thermal protection circuit may produce a duty-cycle modulated output signal. This limits the dissipation in the amplifier, but the rapidly varying output waveform may be damaging to some loads. The thermal protection may behave differently depending on whether internal dissipation is produced by sourcing or sinking output current. UNLNCED POWER SUPPLIES Some applications do not require equal positive and negative output voltage swing. The power supply voltages of the do not need to be equal. For example, a 7V negative power supply voltage assures that the inputs of the are operated within their linear common-mode range, and that the output can swing to V. The V+ power supply could range from V to 63V. The total voltage (V to V+) can range from V to 7V. With a 63V positive supply voltage, the device may not be protected from damage during short-circuits because of the larger V CE during this condition. OUTPUT PROTECTION Reactive and EMF-generating loads can return load current to the amplifier, causing the output voltage to exceed the power supply voltage. This damaging condition can be avoided with clamp diodes from the output terminal to the power supplies as shown in Figure. Fast-recovery rectifier diodes with a or greater continuous rating are recommended. SOCKET n 8-pin TO-3 socket, urr-rown model 8MC is available. lthough not required, this socket makes mounting and interchanging parts easy, especially during design and testing. 8

9 V+ R kω pf V IN R kω R kω / R G = = R D V IN R kω Master.Ω kω V = R /R = L V D Ω.µF Motor D, D : Motorola MUR Fast Recovery Rectifier. Paralleled operation not recommended for input signals that can cause amplifiers to slew. Slave pf.ω FIGURE 3. Motor Drive Circuit. FIGURE. Paralleled Operation, Extended SO. +3V +3V kω kω kω kω 3nF V IN ±V G = +3 3Ω Load Vp-p (±6V) G = kω 3V 3V FIGURE. ridge Drive Circuit. 9

10 PCKGE DRWINGS