Gallium Nitride PIN Avalanche Photodiode with Double-step Mesa Structure
|
|
- Miranda Nicholson
- 5 years ago
- Views:
Transcription
1 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.18, NO.5, OCTOBER, 2018 ISSN(Print) ISSN(Online) Gallium Nitride PIN Avalanche Photodiode with Double-step Mesa Structure Thu Thi Thuy Pham 1, Hyungsik Shin 1, Eugene Chong 2, and Ho-Young Cha 1,* Abstract Typical gallium nitride (GaN) PIN avalanche photodiodes (APDs) are fabricated using a beveled mesa structure due to the difficulty of the ionimplantation process for GaN. The bevel angle of mesa structure must be very small in order to suppress the localized electric field at the junction sidewall that limits the maximum APD gain. In this study, we proposed a double-step mesa structure that can suppress the high electric field at the junction sidewall while maximizing the electric field strength inside the active region under the avalanche bias condition. Index Terms Avalanche photodiode, gallium nitride, bevel, breakdown voltage, gain I. INTRODUCTION Recently, solid-state ultraviolet (UV) detectors have received great attention for various sensor applications due to their small size, light weight, and low production cost [1-4]. Gallium nitride (GaN) has a wide energy bandgap of 3.45 ev and a very low intrinsic carrier concentration of 1.9 x cm -3 at 300K [5-8], which allow solar-blind photo response, high temperature operation, and low dark current characteristics [9]. An additional important feature is the tunable energy bandgap with adjusting Al x Ga 1-x N composition. Manuscript received Apr. 13, 2018; accepted Oct. 11, School of Electronic and Electrical Engineering, Hongik University, Seoul, Korea 2 Chem-Bio Division, Agency for Defense Development, Daejeon, Korea hcha@hongik.ac.kr Therefore, GaN based UV detectors have benefits including small size, high signal-to-noise ratio, and temperature stability. Avalanche photodiodes (APDs) have an internal gain that amplifies the photocurrent and thus enable very weak signal detection. PIN structures are the most common eptitaxial structures for APD fabrication. Typical GaN PIN APDs employ beveled mesa structures [10] for device isolation due to the difficulty of the ion-implantation process for GaN. The bevel angle must be very small in order to suppress the localized high electric field at the junction sidewall. The high electric field at the sidewall causes early edge breakdown, so that the relatively lower electric field in the active region limits the APD gain due to insufficient multiplication effects [11]. Therefore, it is the most important design consideration to maximize the electric field in the active region under the avalanche bias condition. In this study, we proposed a double-step mesa structure that can suppress the electric field at the mesa sidewall while maximizing the electric field strength inside the active region under the avalanche bias condition. II. EXPERIMENTS AND DISCUSSION Cross-sectional schematics for a conventional singlebeveled mesa structure and a double-step mesa structure are shown in Fig. 1(a) and (b), respectively. The doping concentration and thickness of each layer are shown in Table 1. A bevel structure was employed to suppress the electric field at the junction sidewall [12]. The bevel angle must be sufficiently small in order to effectively suppress the electric field at the junction sidewall. The
2 646 THU THI THUY PHAM et al : GALLIUM NITRIDE PIN AVALANCHE PHOTODIODE WITH DOUBLE-STEP MESA Fig. 1. Cross-sectional schematics of PIN APDs with (a) conventional single-beveled mesa, (b) double-step mesa structures. Table 1. Doping concentration and thickness of each layer in GaN PIN APD Layer Doping concentration (cm -3 ) Thickness (mm) P + contact layer P layer N - intrinsic layer N + contact layer Fig. 2. Comparison of breakdown characteristics for ideal, single-beveled mesa, and double-step mesa structures. bevel angle of 10 o was used in this study considering the difficulties in fabrication. Device simulations were performed using a commercial two-dimensional simulator, TCAD (SILVACO ATLAS). The impact ionization coefficient used for GaN is given by [13] a e / E = (1) where E is the electric field. The breakdown characteristics simulated for both structures are shown in Fig. 2 where the behavior of an ideal structure is also compared. The breakdown voltage for the single-beveled mesa and double-step mesa structures are 436 V and 495 V, respectively. The breakdown voltage of the double-step mesa structure is close to that of the ideal case. Two-dimensional potential and corresponding electric field distributions under the breakdown voltage conditions for single-beveled mesa and double-step mesa structures are compared in Fig. 3(a) and (b), respectively. The electric field profiles along the PN junction cutlines (a-a ) for both structures are compared in Fig. 3(c). It was found that the breakdown voltages were governed by the peak electric field strength at the sidewall PN junction; both structures exhibited the same magnitude of Fig. 3. Potential and corresponding electric field distributions under the breakdown conditions (a) single-beveled mesa structure (V BD = 436 V), (b) double-step mesa structure (V BD = 495 V), (c) Comparison of electric field distributions along the PN junction (a-a ). the peak electric field (~3.5 MV/cm) under the breakdown voltage conditions. However, it should be noted that the electric field strength inside the active region is significantly different between two structures. As compared in Fig. 3(c), the single-beveled mesa
3 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.18, NO.5, OCTOBER, Fig. 5. Quantum efficiency characteristics of single-beveled mesa and double-step mesa structures. Fig. 4. Dark current, photo current with a wavelength of 340 nm, and gain characteristics of (a) single-beveled mesa, (b) double-step mesa structures. structure exhibited the electric field strength of ~2.2 MV/cm inside the active region whereas the doublestep mesa structure exhibited ~2.6 MV/cm under the breakdown conditions. According to the potential distributions shown in Fig. 3(b), removing the highlydoped p + contact layer at the edge of the active region in the double-step mesa structure resulted in a significant voltage drop along the thin p layer (~315 V). Therefore, the electric field at the junction sidewall can be mitigated by employing the double-step mesa structure and thus a higher voltage can be applied before the breakdown occurs. That is, the electric field strength inside the active region of the double-step mesa structure can be higher than that of the single-beveled mesa structure under the breakdown conditions. The simulated dark current and photocurrent characteristics along with the calculated gains for two structures are compared in Fig. 4 where the wavelength of the incident photon was 340 nm. It was assumed that the incident photon was absorbed only inside the active region (see Fig. 1). While both APDs exhibited similar characteristics in the low bias regime, significantly higher gain was achieved near the breakdown voltage for the double-step mesa structure. The relatively lower electric field inside the active region of the singlebeveled mesa structure cannot generate a sufficient multiplication process, which limits the APD gain. On the other hand, much higher gain can be achieved for the double-step mesa structure due to the sufficiently high electric field inside the active region. The double-step mesa structure effectively suppressed the electric field at the sidewall and thus allowed higher electric field strength in the active region under the avalanche condition. The higher electric field in the active region leads to higher impact ionization coefficients and subsequently higher APD gain characteristics. The quantum efficiency characteristics for both structures simulated at 5 V with unity gain are compared in Fig. 5. Since no avalanche process is generated under unity gain condition, no difference is observed in quantum efficiency characteristics between two structures. III. CONCLUSIONS A double-step mesa structure was proposed in order to mitigate the electric field at the junction sidewall of a PIN APD. Removing the top highly-doped contact layer at the edge resulted in a significant voltage drop outside the active region, which, in turn, suppressed the electric field at the mesa sidewall and increased the breakdown voltage. The increased breakdown voltage allowed higher electric field inside the active region under the avalanche bias condition, which enhanced the APD gain.
4 648 THU THI THUY PHAM et al : GALLIUM NITRIDE PIN AVALANCHE PHOTODIODE WITH DOUBLE-STEP MESA ACKNOWLEDGMENTS The authors thank Mr. Jong-Ik Kang for his technical assistance in device simulation. This work was supported by the Agency for Defense Development of Korea and Korea Electric Power Corporation (Grants: R17XA05-74, R18XA02). REFERENCES [1] M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. V. Hove, M. Blasingame, High-responsibility photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers, Applied Physics Letters, 1992, 60, p [2] H. Y. Cha, H. K. Sung, H. Kim, C. H. Cho, P. M. Sandvik, 4H-SiC Avalanche Photodiodes for 280nm UV Detection, IEICE Transactions on Electronics, 2010, E93.C, pp [3] D. Gedamu, I. Paulowicz, S. Kaps, O. Lupan, S. Wille, G. Haidarschin, Y. K. Mishra, R. Adelung, Rapid Fabrication Technique for Interpenetrated ZnO Nanotetrapod Networks for Fast UV sensors, Advanced Materials, 2014, 26, pp [4] J. I Kang, H. Kim, C. Y. Han, H. Yang, S. R. Jeon, B. Park, H. J. Cha, Enhanced UV absorption of GaN photodiodes with a ZnO quantum dot coating layer, Optics Express, 2018, 26, pp [5] J. Millan, P. Godignon, Wide Band Gap power semiconductor devices, Electron Device (CDE), 2013 Spanish Conference on, 2013, pp [6] L. F. Eastman, U. K. Mishra, The toughest transistor yet [GaN transistors], IEEE Spectrum, 2002, 39, pp [7] A. A. Burk Jr, M. J. O Loughlin, R. R. Siergiej, A. K. Agarwal, et al. SiC and GaN wide bandgap semiconductor materials and devices, Solid-State Electronic, 1999, 43, pp [8] W. Jian, Design and fabrication of 4H silicon carbide MOSFETs, DAI-B 70/03 Dissertation Abstract International, [9] H. Liu, D. Mcintosh, X. Bai, H. Pan, M. Liu, J.C. Campbell, H. Y. Cha, 4H-SiC PIN Recessed- Window Avalanche Photodiode With High Quantum Efficicency, IEEE Photonics Technology Letters, 2008, 20, pp [10] J. C. Campbell, S. Demiguel, F. Ma, A. Beck, X. Guo, S. Wang, X. Zheng, X. Li, J.D. Beck, A. Huntington, L. A. Coldren, J. Decobert, and N. Tscherptner, Recent advances in avalanche photodiodes, IEEE Journal of Selected Topics in Quantum Electronics, 2004, 10, pp [11] H. Y. Cha, Structural optimization of silicon carbide PIN avalanche photodiodes for UV detection, Journal of the Korean Physical Society, 2010, 56, pp [12] B. J. Baliga, Fundamentals of power semiconductor devices, New York, NY: Springer Science, 2008, p [13] K. Kunihiro, K. Kasahara, Y. Takahashi, Y. Ohno, Experimental Evaluation of Imapct Ionization Coefficients in GaN, IEEE Electron Device Letters, 1999, 20, pp Thu Thi Thuy Pham received the B.S. degrees in Physical Engineering from Hanoi University of Science and Technology, Hanoi, Vietnam, in She is currently pursuing the M.S. degree at Hongik University. Her research interests include wide bandgap semiconductor devices. Hyungsik Shin received his B.S. degree in Electrical Engineering from Seoul National University in He received his M.S. degree in 2005 and Ph.D. degree in 2011 from Stanford University in Electrical Engineering, where he was a member of the Information Systems Laboratory (ISL). He worked at Docomo Communications Laboratories USA, Inc. as a research intern in 2010, and then joined Docomo Innovations, Inc. in 2011 where he was a Research Engineer in the Open Service Innovation Group. At Docomo Innovations, he was one of the lead engineers of machine learning and natural language processing projects. Hyungsik Shin is currently an assistant professor at the School of Electronic and Electrical Engineering, Hongik University, Seoul, Republic of Korea.
5 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.18, NO.5, OCTOBER, Eugene Chong received the B.S. degrees in material science and engineering from Korea University of Technology and Education, Chenan, South Korea, in 2004, and Ph.D. degrees in nanomaterial science and engineering from Korea Institute of Science and Technology (KIST) and Korea Institute and University of Science and Technology (UST), Seoul, South Korea, in She is now with the ChemBio detection team, Agency for Defense Development (ADD), Daejeon, Republic of Korea. Ho-Young Cha received the B.S. and M.S. degrees in Electrical Engineering from the Seoul National University, Seoul, Korea, in 1996 and 1999, respectively, and the Ph.D. degree in Electrical and Computer Engineering from Cornell University, Ithaca, NY, in He was a Postdoctoral Research Associate with Cornell University until 2005, where he focused on the design and fabrication of wide bandgap semiconductor devices. He was with the General Electric Global Research Center, Niskayuna, NY, from 2005 to 2007, developing wide-bandgap semiconductor sensors and high-power devices. Since 2007, he is currently Professor in the School of Electronic and Electrical Engineering. His research interests include wide-bandgap semiconductor devices. He has authored over 100 publications in his research area.
Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.2, APRIL, 2016 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2016.16.2.221 ISSN(Online) 2233-4866 Normally-Off Operation of AlGaN/GaN
More informationChap14. Photodiode Detectors
Chap14. Photodiode Detectors Mohammad Ali Mansouri-Birjandi mansouri@ece.usb.ac.ir mamansouri@yahoo.com Faculty of Electrical and Computer Engineering University of Sistan and Baluchestan (USB) Design
More informationPhotodiode: LECTURE-5
LECTURE-5 Photodiode: Photodiode consists of an intrinsic semiconductor sandwiched between two heavily doped p-type and n-type semiconductors as shown in Fig. 3.2.2. Sufficient reverse voltage is applied
More informationDesign and Simulation of N-Substrate Reverse Type Ingaasp/Inp Avalanche Photodiode
International Refereed Journal of Engineering and Science (IRJES) ISSN (Online) 2319-183X, (Print) 2319-1821 Volume 2, Issue 8 (August 2013), PP.34-39 Design and Simulation of N-Substrate Reverse Type
More informationLEDs, Photodetectors and Solar Cells
LEDs, Photodetectors and Solar Cells Chapter 7 (Parker) ELEC 424 John Peeples Why the Interest in Photons? Answer: Momentum and Radiation High electrical current density destroys minute polysilicon and
More informationOptical Receivers Theory and Operation
Optical Receivers Theory and Operation Photo Detectors Optical receivers convert optical signal (light) to electrical signal (current/voltage) Hence referred O/E Converter Photodetector is the fundamental
More informationOptical Amplifiers. Continued. Photonic Network By Dr. M H Zaidi
Optical Amplifiers Continued EDFA Multi Stage Designs 1st Active Stage Co-pumped 2nd Active Stage Counter-pumped Input Signal Er 3+ Doped Fiber Er 3+ Doped Fiber Output Signal Optical Isolator Optical
More informationAvalanche Photodiode. Instructor: Prof. Dietmar Knipp Presentation by Peter Egyinam. 4/19/2005 Photonics and Optical communicaton
Avalanche Photodiode Instructor: Prof. Dietmar Knipp Presentation by Peter Egyinam 1 Outline Background of Photodiodes General Purpose of Photodiodes Basic operation of p-n, p-i-n and avalanche photodiodes
More informationDevelopment of Solid-State Detector for X-ray Computed Tomography
Proceedings of the Korea Nuclear Society Autumn Meeting Seoul, Korea, October 2001 Development of Solid-State Detector for X-ray Computed Tomography S.W Kwak 1), H.K Kim 1), Y. S Kim 1), S.C Jeon 1), G.
More informationDetectors for Optical Communications
Optical Communications: Circuits, Systems and Devices Chapter 3: Optical Devices for Optical Communications lecturer: Dr. Ali Fotowat Ahmady Sep 2012 Sharif University of Technology 1 Photo All detectors
More informationDevelopment of the Pixelated Photon Detector. Using Silicon on Insulator Technology. for TOF-PET
July 24, 2015 Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET A.Koyama 1, K.Shimazoe 1, H.Takahashi 1, T. Orita 2, Y.Arai 3, I.Kurachi 3, T.Miyoshi 3, D.Nio
More informationImproved Performance of Silicon Carbide Detector Using Double Layer Anti Reflection (AR) Coating
Improved Performance of Silicon Carbide Detector Using Double Layer Anti Reflection (AR) Coating by N. C. Das, A. V. Sampath, H. Shen, and M. Wraback ARL-TN-0563 August 2013 Approved for public release;
More informationLecture 18: Photodetectors
Lecture 18: Photodetectors Contents 1 Introduction 1 2 Photodetector principle 2 3 Photoconductor 4 4 Photodiodes 6 4.1 Heterojunction photodiode.................... 8 4.2 Metal-semiconductor photodiode................
More informationAnalysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.3, JUNE, 2014 http://dx.doi.org/10.5573/jsts.2014.14.3.263 Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing
More information14.2 Photodiodes 411
14.2 Photodiodes 411 Maximum reverse voltage is specified for Ge and Si photodiodes and photoconductive cells. Exceeding this voltage can cause the breakdown and severe deterioration of the sensor s performance.
More informationParasitic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.18, NO.1, FEBRUARY, 2018 ISSN(Print) 1598-1657 https://doi.org/10.5573/jsts.2018.18.1.078 ISSN(Online) 2233-4866 Parasitic Resistance Effects on Mobility
More informationOptimization of Double Gate Vertical Channel Tunneling Field Effect Transistor (DVTFET) with Dielectric Sidewall
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.17, NO.2, APRIL, 2017 ISSN(Print) 1598-1657 https://doi.org/10.5573/jsts.2017.17.2.192 ISSN(Online) 2233-4866 Optimization of Double Gate Vertical Channel
More informationOptical Fiber Communication Lecture 11 Detectors
Optical Fiber Communication Lecture 11 Detectors Warriors of the Net Detector Technologies MSM (Metal Semiconductor Metal) PIN Layer Structure Semiinsulating GaAs Contact InGaAsP p 5x10 18 Absorption InGaAs
More informationChapter 3 OPTICAL SOURCES AND DETECTORS
Chapter 3 OPTICAL SOURCES AND DETECTORS 3. Optical sources and Detectors 3.1 Introduction: The success of light wave communications and optical fiber sensors is due to the result of two technological breakthroughs.
More information10/27/2009 Reading: Chapter 10 of Hambley Basic Device Physics Handout (optional)
EE40 Lec 17 PN Junctions Prof. Nathan Cheung 10/27/2009 Reading: Chapter 10 of Hambley Basic Device Physics Handout (optional) Slide 1 PN Junctions Semiconductor Physics of pn junctions (for reference
More informationUNIT III. By Ajay Kumar Gautam Asst. Prof. Electronics & Communication Engineering Dev Bhoomi Institute of Technology & Engineering, Dehradun
UNIT III By Ajay Kumar Gautam Asst. Prof. Electronics & Communication Engineering Dev Bhoomi Institute of Technology & Engineering, Dehradun SYLLABUS Optical Absorption in semiconductors, Types of Photo
More informationRecent Development and Study of Silicon Solid State Photomultiplier (MRS Avalanche Photodetector)
Recent Development and Study of Silicon Solid State Photomultiplier (MRS Avalanche Photodetector) Valeri Saveliev University of Obninsk, Russia Vienna Conference on Instrumentation Vienna, 20 February
More informationOPTOELECTRONIC and PHOTOVOLTAIC DEVICES
OPTOELECTRONIC and PHOTOVOLTAIC DEVICES Outline 1. Introduction to the (semiconductor) physics: energy bands, charge carriers, semiconductors, p-n junction, materials, etc. 2. Light emitting diodes Light
More informationLecture 9 External Modulators and Detectors
Optical Fibres and Telecommunications Lecture 9 External Modulators and Detectors Introduction Where are we? A look at some real laser diodes. External modulators Mach-Zender Electro-absorption modulators
More informationA silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product
A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product Myung-Jae Lee and Woo-Young Choi* Department of Electrical and Electronic Engineering,
More informationIN RECENT years, ultraviolet (UV) single-photon detection
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 24, NO. 2, MARCH/APRIL 2018 3800305 Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection
More informationUnit 2 Semiconductor Devices. Lecture_2.5 Opto-Electronic Devices
Unit 2 Semiconductor Devices Lecture_2.5 Opto-Electronic Devices Opto-electronics Opto-electronics is the study and application of electronic devices that interact with light. Electronics (electrons) Optics
More information4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions
ELECTRONICS 4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions Yu SAITOH*, Toru HIYOSHI, Keiji WADA, Takeyoshi MASUDA, Takashi TSUNO and Yasuki MIKAMURA ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
More informationPhysics of Waveguide Photodetectors with Integrated Amplification
Physics of Waveguide Photodetectors with Integrated Amplification J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers Electrical and Computer Engineering Department University of California, Santa
More informationElectronic devices-i. Difference between conductors, insulators and semiconductors
Electronic devices-i Semiconductor Devices is one of the important and easy units in class XII CBSE Physics syllabus. It is easy to understand and learn. Generally the questions asked are simple. The unit
More informationEffective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs
JOURNAL OF SEMICONUCTOR TECHNOLOGY AN SCIENCE, VOL.16, NO.6, ECEMBER, 216 ISSN(Print) 1598-1657 https://doi.org/1.5573/jsts.216.16.6.867 ISSN(Online) 2233-4866 Effective Channel Mobility of AlGaN/GaN-on-Si
More informationFundamentals of CMOS Image Sensors
CHAPTER 2 Fundamentals of CMOS Image Sensors Mixed-Signal IC Design for Image Sensor 2-1 Outline Photoelectric Effect Photodetectors CMOS Image Sensor(CIS) Array Architecture CIS Peripherals Design Considerations
More informationKey Questions ECE 340 Lecture 28 : Photodiodes
Things you should know when you leave Key Questions ECE 340 Lecture 28 : Photodiodes Class Outline: How do the I-V characteristics change with illumination? How do solar cells operate? How do photodiodes
More informationLecture 8 Optical Sensing. ECE 5900/6900 Fundamentals of Sensor Design
ECE 5900/6900: Fundamentals of Sensor Design Lecture 8 Optical Sensing 1 Optical Sensing Q: What are we measuring? A: Electromagnetic radiation labeled as Ultraviolet (UV), visible, or near,mid-, far-infrared
More informationSilicon Carbide Solid-State Photomultiplier for UV Light Detection
Silicon Carbide Solid-State Photomultiplier for UV Light Detection Sergei Dolinsky, Stanislav Soloviev, Peter Sandvik, and Sabarni Palit GE Global Research 1 Why Solid-State? PMTs are sensitive to magnetic
More informationNovel SiC Junction Barrier Schottky Diode Structure for Efficiency Improvement of EV Inverter
EVS28 KINTEX, Korea, May 3-6, 2015 Novel SiC Junction Barrier Schottky iode Structure for Efficiency Improvement of EV Inverter ae Hwan Chun, Jong Seok Lee, Young Kyun Jung, Kyoung Kook Hong, Jung Hee
More informationHigh Speed pin Photodetector with Ultra-Wide Spectral Responses
High Speed pin Photodetector with Ultra-Wide Spectral Responses C. Tam, C-J Chiang, M. Cao, M. Chen, M. Wong, A. Vazquez, J. Poon, K. Aihara, A. Chen, J. Frei, C. D. Johns, Ibrahim Kimukin, Achyut K. Dutta
More information4H-SiC Planar MESFET for Microwave Power Device Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.5, NO.2, JUNE, 2005 113 4H-SiC Planar MESFET for Microwave Power Device Applications Hoon Joo Na*, Sang Yong Jung*, Jeong Hyun Moon*, Jeong Hyuk Yim*,
More informationDesign and Analysis of AlGaN/GaN MIS HEMTs with a Dual-metal-gate Structure
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.17, NO.2, APRIL, 2017 ISSN(Print) 1598-1657 https://doi.org/10.5573/jsts.2017.17.2.223 ISSN(Online) 2233-4866 Design and Analysis of AlGaN/GaN MIS HEMTs
More information3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013
3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013 Dummy Gate-Assisted n-mosfet Layout for a Radiation-Tolerant Integrated Circuit Min Su Lee and Hee Chul Lee Abstract A dummy gate-assisted
More informationHIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS
HIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS J. Piprek, Y.-J. Chiu, S.-Z. Zhang (1), J. E. Bowers, C. Prott (2), and H. Hillmer (2) University of California, ECE Department, Santa Barbara, CA 93106
More informationIntegrate-and-Fire Neuron Circuit and Synaptic Device with Floating Body MOSFETs
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.6, DECEMBER, 2014 http://dx.doi.org/10.5573/jsts.2014.14.6.755 Integrate-and-Fire Neuron Circuit and Synaptic Device with Floating Body MOSFETs
More informationOFCS OPTICAL DETECTORS 11/9/2014 LECTURES 1
OFCS OPTICAL DETECTORS 11/9/2014 LECTURES 1 1-Defintion & Mechanisms of photodetection It is a device that converts the incident light into electrical current External photoelectric effect: Electrons are
More informationCONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
More informationA MONOLITHICALLY INTEGRATED PHOTORECEIVER WITH AVALANCHE PHOTODIODE IN CMOS TECHNOLOGY
A MONOLITHICALLY INTEGRATED PHOTORECEIVER WITH AVALANCHE PHOTODIODE IN CMOS TECHNOLOGY Zul Atfyi Fauzan Mohammed Napiah 1,2 and Koichi Iiyama 2 1 Centre for Telecommunication Research and Innovation, Faculty
More informationInP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud
More informationA new Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applications
A new Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applications Radhakrishnan Sithanandam and M. Jagadesh Kumar, Senior Member, IEEE Department of Electrical Engineering Indian Institute
More informationCMOS Phototransistors for Deep Penetrating Light
CMOS Phototransistors for Deep Penetrating Light P. Kostov, W. Gaberl, H. Zimmermann Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology Gusshausstr. 25/354,
More informationFundamentals of Power Semiconductor Devices
В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device
More informationAccurate Sub-1 V CMOS Bandgap Voltage Reference with PSRR of -118 db
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.4, AUGUST, 2016 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2016.16.4.528 ISSN(Online) 2233-4866 Accurate Sub-1 V CMOS Bandgap Voltage
More informationQuantum Condensed Matter Physics Lecture 16
Quantum Condensed Matter Physics Lecture 16 David Ritchie QCMP Lent/Easter 2018 http://www.sp.phy.cam.ac.uk/drp2/home 16.1 Quantum Condensed Matter Physics 1. Classical and Semi-classical models for electrons
More informationDC Analysis of InP/GaAsSb DHBT Device Er. Ankit Sharma 1, Dr. Sukhwinder Singh 2
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE) e-issn: 2278-2834,p- ISSN: 2278-8735.Volume 10, Issue 5, Ver. I (Sep - Oct.2015), PP 48-52 www.iosrjournals.org DC Analysis of InP/GaAsSb
More informationSUPPLEMENTARY INFORMATION
DOI: 1.138/NPHOTON.212.11 Supplementary information Avalanche amplification of a single exciton in a semiconductor nanowire Gabriele Bulgarini, 1, Michael E. Reimer, 1, Moïra Hocevar, 1 Erik P.A.M. Bakkers,
More informationDesign and Simulation of a Silicon Photomultiplier Array for Space Experiments
Journal of the Korean Physical Society, Vol. 52, No. 2, February 2008, pp. 487491 Design and Simulation of a Silicon Photomultiplier Array for Space Experiments H. Y. Lee, J. Lee, J. E. Kim, S. Nam, I.
More informationPHYSICAL ELECTRONICS(ECE3540) APPLICATIONS OF PHYSICAL ELECTRONICS PART I
PHYSICAL ELECTRONICS(ECE3540) APPLICATIONS OF PHYSICAL ELECTRONICS PART I Tennessee Technological University Monday, October 28, 2013 1 Introduction In the following slides, we will discuss the summary
More informationTheoretical Investigation of Quantum Dot Avalanche Photodiodes for Mid-Infrared Applications
Theoretical Investigation of Quantum Dot Avalanche Photodiodes for Mid-Infrared Applications Sanjay Krishna, Member, IEEE, Oh-Hyun Kwon, and Majeed M. Hayat, Senior Member, IEEE Abstract A novel mid-infrared
More informationIEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 32, NO. 6, DECEMBER
IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 32, NO. 6, DECEMBER 2004 2189 Experimental Observation of Image Sticking Phenomenon in AC Plasma Display Panel Heung-Sik Tae, Member, IEEE, Jin-Won Han, Sang-Hun
More informationLaser tests of Wide Band Gap power devices. Using Two photon absorption process
Laser tests of Wide Band Gap power devices Using Two photon absorption process Frederic Darracq Associate professor IMS, CNRS UMR5218, Université Bordeaux, 33405 Talence, France 1 Outline Two-Photon absorption
More informationMOSFET short channel effects
MOSFET short channel effects overview Five different short channel effects can be distinguished: velocity saturation drain induced barrier lowering (DIBL) impact ionization surface scattering hot electrons
More information1468 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 12, DECEMBER 2005
1468 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 12, DECEMBER 2005 Theoretical Investigation of Quantum-Dot Avalanche Photodiodes for Mid-infrared Applications Sanjay Krishna, Student Member, IEEE,
More informationNOVEL 4H-SIC BIPOLAR JUNCTION TRANSISTOR (BJT) WITH IMPROVED CURRENT GAIN
NOVEL 4H-SIC BIPOLAR JUNCTION TRANSISTOR (BJT) WITH IMPROVED CURRENT GAIN Thilini Daranagama 1, Vasantha Pathirana 2, Florin Udrea 3, Richard McMahon 4 1,2,3,4 The University of Cambridge, Cambridge, United
More informationSolar Cell Parameters and Equivalent Circuit
9 Solar Cell Parameters and Equivalent Circuit 9.1 External solar cell parameters The main parameters that are used to characterise the performance of solar cells are the peak power P max, the short-circuit
More informationIntegrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing- Dependent Plasticity
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.15, NO.6, DECEMBER, 2015 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2015.15.6.658 ISSN(Online) 2233-4866 Integrate-and-Fire Neuron Circuit
More informationNew Silicon Reach-Through Avalanche Photodiodes with Enhanced Sensitivity in the DUV/UV Wavelength Range
New Silicon Reach-Through Avalanche Photodiodes with Enhanced Sensitivity in the DUV/UV Wavelength Range D. Grubišić, A. Shah Laser Components DG, Inc., Tempe, Arizona, dgrubisic@laser-components.com Abstract
More information10/14/2009. Semiconductor basics pn junction Solar cell operation Design of silicon solar cell
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
More informationExamination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade:
Examination Optoelectronic Communication Technology April, 26 Name: Student ID number: OCT : OCT 2: OCT 3: OCT 4: Total: Grade: Declaration of Consent I hereby agree to have my exam results published on
More informationAVALANCHE photodiodes (APDs) are important components
568 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 4, APRIL 2005 Detrimental Effect of Impact Ionization in the Absorption Region on the Frequency Response and Excess Noise Performance of InGaAs InAlAs
More informationAndrea WILMS GSI, Helmholtzzentrum für Schwerionenforschung, Darmstadt, Germany
GSI, Helmholtzzentrum für Schwerionenforschung, Darmstadt, Germany E-mail: A.Wilms@gsi.de During the last years the experimental demands on photodetectors used in several HEP experiments have increased
More informationPerformance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In 1-x Ga x )Se 2 Thin-Film Solar Cells
Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In 1-x Ga x )Se 2 Thin-Film Solar Cells Alexei Pudov 1, James Sites 1, Tokio Nakada 2 1 Department of Physics, Colorado State University, Fort
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Photodetectors Introduction Most important characteristics Photodetector
More informationFunctional Materials. Optoelectronic devices
Functional Materials Lecture 2: Optoelectronic materials and devices (inorganic). Photonic materials Optoelectronic devices Light-emitting diode (LED) displays Photodiode and Solar cell Photoconductive
More informationSub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs
Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Monika Siddharth Rajan ECE, The Ohio State University Andrew Allerman, Michael
More informationPhotonic Crystal Slot Waveguide Spectrometer for Detection of Methane
Photonic Crystal Slot Waveguide Spectrometer for Detection of Methane Swapnajit Chakravarty 1, Wei-Cheng Lai 2, Xiaolong (Alan) Wang 1, Che-Yun Lin 2, Ray T. Chen 1,2 1 Omega Optics, 10306 Sausalito Drive,
More informationSILICON NANOWIRE HYBRID PHOTOVOLTAICS
SILICON NANOWIRE HYBRID PHOTOVOLTAICS Erik C. Garnett, Craig Peters, Mark Brongersma, Yi Cui and Mike McGehee Stanford Univeristy, Department of Materials Science, Stanford, CA, USA ABSTRACT Silicon nanowire
More information6. LDD Design Tradeoffs on Latch-Up and Degradation in SOI MOSFET
110 6. LDD Design Tradeoffs on Latch-Up and Degradation in SOI MOSFET An experimental study has been conducted on the design of fully depleted accumulation mode SOI (SIMOX) MOSFET with regard to hot carrier
More informationFabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes
Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes Abstract We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The
More information324 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 34, NO. 2, APRIL 2006
324 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 34, NO. 2, APRIL 2006 Experimental Observation of Temperature- Dependent Characteristics for Temporal Dark Boundary Image Sticking in 42-in AC-PDP Jin-Won
More informationStudy and Measurement of the Main Parameters of a Laser quadrant Detector
Cairo University National Institute of Laser Enhanced Sciences Laser Sciences and Interactions Study and Measurement of the Main Parameters of a Laser quadrant Detector By Eng. Mohamed Abd-Elfattah Abd-Elazim
More informationphotolithographic techniques (1). Molybdenum electrodes (50 nm thick) are deposited by
Supporting online material Materials and Methods Single-walled carbon nanotube (SWNT) devices are fabricated using standard photolithographic techniques (1). Molybdenum electrodes (50 nm thick) are deposited
More informationSilicon sensors for radiant signals. D.Sc. Mikko A. Juntunen
Silicon sensors for radiant signals D.Sc. Mikko A. Juntunen 2017 01 16 Today s outline Introduction Basic physical principles PN junction revisited Applications Light Ionizing radiation X-Ray sensors in
More informationPower MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
More informationh v [ME08] Development of silicon planar P-I-N photodiode P Susthitha Menon a/p N V Visvanathan, Sahbudin Shaari
[ME08] Development of silicon planar P-I-N photodiode P Susthitha Menon a/p N V Visvanathan, Sahbudin Shaari Photonics Technology Laboratory (PTL), Institute of Micro Engineering and Nanoelectronics (IMEN),
More informationFIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 20
FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 20 Photo-Detectors and Detector Noise Fiber Optics, Prof. R.K. Shevgaonkar, Dept.
More informationImpact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors
11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings) Silicon Valley, December 5, 2018 Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors *, A. Kumar,
More informationJunction-less phototransistor with nanowire channels, a modeling study
Junction-less phototransistor with nanowire channels, a modeling study Anita Fadavi Roudsari, 1,* Simarjeet S. Saini, 1 Nixon O, 2 and M. P. Anantram 3 1 Department of Electrical and Computer Engineering,
More informationForming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET
http://dx.doi.org/10.5573/jsts.2015.15.1.016 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.15, NO.1, FEBRUARY, 2015 Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET Jung-Yeon
More informationMAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI
MAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI - 621213 DEPARTMENT : ECE SUBJECT NAME : OPTICAL COMMUNICATION & NETWORKS SUBJECT CODE : EC 2402 UNIT III: SOURCES AND DETECTORS PART -A (2 Marks) 1. What
More informationFrequency Dependent Harmonic Powers in a Modified Uni-Traveling Carrier (MUTC) Photodetector
Naval Research Laboratory Washington, DC 2375-532 NRL/MR/5651--17-9712 Frequency Dependent Harmonic Powers in a Modified Uni-Traveling Carrier (MUTC) Photodetector Yue Hu University of Maryland Baltimore,
More informationLAB V. LIGHT EMITTING DIODES
LAB V. LIGHT EMITTING DIODES 1. OBJECTIVE In this lab you are to measure I-V characteristics of Infrared (IR), Red and Blue light emitting diodes (LEDs). The emission intensity as a function of the diode
More informationOptical Communications
Optical Communications Telecommunication Engineering School of Engineering University of Rome La Sapienza Rome, Italy 2005-2006 Lecture #4, May 9 2006 Receivers OVERVIEW Photodetector types: Photodiodes
More informationSemiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in semiconductor material Pumped now with high current density
More informationUNIT IX ELECTRONIC DEVICES
UNT X ELECTRONC DECES Weightage Marks : 07 Semiconductors Semiconductors diode-- characteristics in forward and reverse bias, diode as rectifier. - characteristics of LED, Photodiodes, solarcell and Zener
More informationCharacterisation of SiPM Index :
Characterisation of SiPM --------------------------------------------------------------------------------------------Index : 1. Basics of SiPM* 2. SiPM module 3. Working principle 4. Experimental setup
More informationGallium nitride (GaN)
80 Technology focus: GaN power electronics Vertical, CMOS and dual-gate approaches to gallium nitride power electronics US research company HRL Laboratories has published a number of papers concerning
More informationGALLIUM phosphide, though most commonly used in
IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 40, NO. 12, DECEMBER 2004 1695 Quasi-Direct UV/Blue GaP Avalanche Photodetectors Ariane L. Beck, Bo Yang, S. Wang, Charles J. Collins, Joe C. Campbell, Fellow,
More informationUNIT VIII-SPECIAL PURPOSE ELECTRONIC DEVICES. 1. Explain tunnel Diode operation with the help of energy band diagrams.
UNIT III-SPECIAL PURPOSE ELECTRONIC DEICES 1. Explain tunnel Diode operation with the help of energy band diagrams. TUNNEL DIODE: A tunnel diode or Esaki diode is a type of semiconductor diode which is
More informationUltra-sensitive SiGe Bipolar Phototransistors for Optical Interconnects
Ultra-sensitive SiGe Bipolar Phototransistors for Optical Interconnects Michael Roe Electrical Engineering and Computer Sciences University of California at Berkeley Technical Report No. UCB/EECS-2012-123
More informationRecent Technological Developments on LGAD and ilgad Detectors for Tracking and Timing Applications
Recent Technological Developments on LGAD and ilgad Detectors for Tracking and Timing Applications G. Pellegrini 1, M. Baselga 1, M. Carulla 1, V. Fadeyev 2, P. Fernández-Martínez 1, M. Fernández García
More informationWhat is the highest efficiency Solar Cell?
What is the highest efficiency Solar Cell? GT CRC Roof-Mounted PV System Largest single PV structure at the time of it s construction for the 1996 Olympic games Produced more than 1 billion watt hrs. of
More information