CMOS Phototransistors for Deep Penetrating Light
|
|
- Eleanore Potter
- 5 years ago
- Views:
Transcription
1
2 CMOS Phototransistors for Deep Penetrating Light P. Kostov, W. Gaberl, H. Zimmermann Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology Gusshausstr. 25/354, 1040 Vienna, Austria Tel.: ; Abstract In this work, we report on the design as well as the electrical and optical characteristics of several μm 2 silicon pnp phototransistors built in a 0.6 μm OPTO ASIC CMOS process using a special starting material. This special starting material consists of a low doped epi-layer on top of the p-substrate. Responsivities up to 98 A/W for modulated light were achieved. Furthermore some phototransistors reach bandwidths up to 13.4 MHz. Electrical forward current gains up to 187 were achieved. The CMOS integration of these phototransistors paves the way for cheap optoelectronic integrated circuits (OEIC), where analog and digital circuitry can be implemented together with active optical detectors. Application examples are highly sensitive optical sensors, active pixel image sensors, light barriers, opto-coupler, etc. Keywords CMOS, Silicon, Phototransistors, Light detector, OEIC, NIR. I. INTRODUCTION Photodetectors are essential for the conversion of optical signals into electrical ones. In a standard CMOS process different types of photodetectors with different characteristics can be built. The mostly used photodetectors in silicon OEICs are photodiodes (PN-PD, PIN-PD), avalanche photodiodes (APDs) and phototransistors (PTs). 1) PN-Photodiode: By far the most used photodetector is the PN-photodiode. PN-PDs can be realized in two different structures. First, they can be built as a well/substrate junction. Second, the detector can be built as a p + /n-well junction (junction depth about 2μm). Both structures have similar properties. A major drawback of PN junctions is their thin space-charge region (SCR) of less than 2μm at typical supply voltages (<5V) due to high doping concentrations. For deep penetrating light, shallow SCRs lead to slow detectors since most of the charges are generated outside the SCR region (e.g.: NIR-light with 850 nm has a 1/e penetration depth of about 16.6 μm [1]). 2) PIN-Photodiode: PIN photodiodes overcome this limitation by a (thick) additional low doped epi-layer. The low doped epitaxial layer leads to a thick SCR and the PIN- PD gets faster for light with a deep penetration depth. Nevertheless, the responsivity is limited for optimum quantum efficiency to nm and nm [1]. 3) Avalanche Photodiodes: APDs and PTs achieve by internal amplification mechanisms higher responsivities than PDs. This amplification is important for detecting weak optical signals. A major drawback of APDs is their need for high voltages (e.g. up to 450 V in [2]). High voltages are hard to handle in system-on-chip (SoC) applications. A shallow APD with a responsivity of 4.6 A/W at 430 nm and a reverse bias of 19.5 V is reported in [3]. The above mentioned drawbacks can be avoided by the use of phototransistors. 4) Phototransistors: Phototransistors achieve current amplification without high voltages. This is the main benefit of PTs compared to APDs. A PT consists of a PD (base-collector junction) and an internal BJT for current amplification. Fig. 1 depicts the cross-section of a PT in a standard CMOS process. In [4], PTs in a standard-buriedcollector (SBC) BiCMOS technology with a responsivity of 2.7 A/W are reported. In our work we realized different designs of silicon integrated PTs with different characteristics. The characteristics of each PT can be adjusted by means of different layout designs of the base and emitter area. Cheap implementation in a CMOS process opens the opportunity for the production of cheap silicon based OEICs. Application examples are highly sensitive optical sensors, active pixel image sensors, light barriers, opto-coupler, etc. This work reports on the design and characterization of these PTs. II. PHOTOTRANSISTOR: STRUCTURES AND PROPERTIES Several μm 2 pnp type silicon integrated PTs were built in a 0.6 μm OPTO ASIC CMOS technology. The only difference compared to a standard OPTO ASIC process was the use of a special starting material. The special starting material has a 15 μm thick low doped ( cm -3 ) p-epitaxial layer and a 1 μm n-epitaxial layer (10 14 cm -3 ) on top of the p ++ -substrate. The p-epitaxial layer ensures a thick SCR resulting in a thick drift zone at the base-collector junction. Therefore this structure is well suited for the detection of deep penetrating light. Fig. 1: SCHEMATIC AND CROSS SECTION OF A PNP PT 46
3 A. Base Three different layouts of the PTs base area were designed. First, the base was formed only by the low doped n-epitaxial layer. Second, a higher doped base was formed by an n-well. Third, a mix of the both mentioned dopings was used. Stripes of n-well were implanted with different widths to adjust the effective doping concentration of the base (Fig. 2). The main geometrical parameters for the adjustable base are shown in Tab. 1. B. Emitter The emitter was also realized in three different layouts. First, a large emitter with a plane of μm 2 was designed. Second, a striped emitter with 1.4 μm wide stripes was designed. Between the stripes are 8.4 μm wide gaps. Third, the emitter was built by a small emitter dot in the center or at the corner of the PTs, respectively. The center emitter has a size of μm 2 and the corner emitter a size of μm 2. Two emitter structures (stripped and center emitter) are depicted in Fig. 3. C. Collector The collector of each PT is formed by the substrate itself. The collector is connected via a large area ring of substrate contacts at the border of the photosensitive area. NW Stripes Resulting doping Width w Distance d concentration 100 μm % (NW full ) 2 μm 1 μm 66 % (NW 66 ) 1 μm 1 μm 50 % (NW 50 ) 1 μm 2 μm 33 % (NW 33 ) % (NW epi ) TAB. 1: DESIGN PARAMETERS AND N-DOPING CONCENTRA- TION OF THE ADJUSTABLE BASE D. Bandwidth Junction capacitances can be found between base and emitter as well as between base and collector (C BE, C BC ). These two capacitances of the PTs are of major importance for the dynamic behaviour of the PTs. The sizes of these capacitances depend strongly on the thickness of their relevant SCRs. Furthermore the thicknesses of the SCRs depend on the doping concentration in the base. These capacitances and the base transit time are the main parameters defining the -3 db bandwidth of PTs. The -3 db bandwidth is indirect proportional to the three mentioned parameters. Equation (1) describes the relation between the -3 db bandwidth the above mentioned parameters [5]. where f 3dB 1 kbt 2 C C qie B BE BC f 3dB -3 db Bandwidth of the phototransistor; forward current gain of the phototransistor; B base transit time; k B Boltzmann constant; T absolute temperature; q elementary charge; I E emitter current of the Phototransistor; C base-emitter capacitance; BE C base-collector capacitance. BC E. Forward Current Gain Furthermore the thickness of the area between the SCRs (this equals the effective base thickness) is of major importance for the current gain of the PT. Thick SCRs lead to small capacitances and to a thin effective base. In a rough estimation, the current gain is indirect proportional to the square of the effective base thickness. This relation is shown in equation (2) [6]. (1) Fig. 2: CROSS SECTION OF THE ADJUSTABLE BASE DESIGN 1 2 B Dn B D W W N 2 D D L N b p p n A (2) where Fig. 3: TOP VIEW OF TWO EMITTER DESIGNS W B b D p D n forward current gain of the phototransistor; effective base thickness; minority carrier lifetime in the base; diffusion coefficient of holes in the base; diffusion coefficient of electrons in the base; L n diffusion length of electrons in the emitter; N D donor density in the base; N donor density in the emitter. A 47
4 III. RESULTS AND MEASUREMENTS Electrical and optical (at 675 nm and 850 nm) characterizations of the PTs were done by three measurement setups. 1) Gummel measurements: Gummel measurements were done to characterize the electrical current amplification. A depiction of the gain over the collector current I C for four PTs with a small centered emitter and different types of base doping is shown in Fig. 4. PTs with lighter doped base have due to thicker SCRs a thinner effective base width W B and a minor donor density N D than other PTs. According to equation (2) this properties lead to a higher current gain. The PTs depicted in Fig. 3 show current amplifications between 57 and 187 for I C < 13 na. 2) DC light measurements: DC light measurements were done by sweeping the optical light power and varying the collector-emitter voltage from -1 V to -8 V. Fig. 5. depicts the responsivity of two PTs at three different Fig. 4: CURRENT GAIN FOR FOUR PTS WITH DIFFERENTLY DOPED BASE AND SMALL CENTER EMITTER collector-emitter voltages for 675 nm DC light. For this measurement the light power was swept from -55 dbm to -26 dbm. The PT with the full plane emitter and the 50% doped base shows the largest responsivity of 76A/W at V CE = -8 V. In devices with small centered emitter, electrons have to travel longer distances to reach the emitter due to an inhomogeneous electric field. This leads to recombination of holes and electrons and furthermore to a decreased responsivity. The small sized center emitter PT has a higher emitter resistance compared to the full emitter PT. The higher resistance is due to the smaller emitter area. This leads to a stronger decrease of the responsivity according to the optical power due to stronger operating point variations for the PT with the small center emitter. 3) AC light measurements: AC light measurements were done for determining the responsivity and bandwidth at 675 nm as well as 850 nm. The measurements were done at an optical power of dbm at 675 nm light and dbm at 850 nm light. Due to the difference in the penetration depth of 675 nm and 850 nm light, the used optical power was adjusted to meet the same collector current for each wavelength. The devices were characterized at three different collector-emitter voltages and five different operating points (including floating base): V CE = -2 V, V CE = -5 V, V CE = -10 V, I B = 0 A, I B = 1 μa, I B = 2 μa, I B = 5 μa and I B = 10 μa. The base current I B was adjusted via an on-chip 1 M resistor. Responsivities at different operating points for three PTs at 675 nm (top table) and 850 nm (bottom table) are show in Tab. 2. In Tab. 3 the corresponding bandwidth values are shown. According to equation (1) and (2), the device with the smallest emitter shows the highest bandwidth and the smallest responsivity. In contrast to this device, the device with the full plane emitter has the smallest bandwidth and the highest responsivity. The PT with the full emitter shows also a strong increase of the responsivity with a collectoremitter voltage increase. The small emitter devices have a small but rather constant responsivity. All PTs show a bandwidth increase when increasing the collector-emitter voltage. The PTs achieved a higher responsivity at 675 nm, due to a shorter penetration depth of 675 nm compared to 850 nm light. Maximum achieved values for the responsivity are 98 A/W at 675 nm and 37.2 A/W at 850 nm light. Furthermore, bandwidths up to 8.97 MHz at 675 nm and MHz at 850 nm were achieved. IV. CONCLUSIONS Fig. 5: DC RESPONSIVITY FOR TWO PTS (50 % DOPED N- WELL BASE WITH FULL AND CENTERED EMITTER) AT THREE DIFFERENT COLLECTOR-EMITTER VOLTAGES AT 675 NM. This paper reports on fully integrated silicon PTs in a CMOS OPTO ASIC technology. The use of a special starting material is the only difference compared to a standard OPTO ASIC technology. Electrical and optical measurements were done for the PTs characterizations. Electrical current gains up to 187 as well as responsivities up to 98 A/W and bandwidths up to 13.4 MHz were achieved. The PTs in this work achieve about 25 times more responsivity compared to devices presented in [4]. The full silicon integration of the PTs makes them well suited for many optical sensing applications and cheap OEICs. 48
5 Tab. 2: RESPONSIVITIES IN A/W FOR THREE PHOTOTRANSISTORS AT 675 NM (TOP-TABLE) AND 850 NM (BOTTOM-TABLE) AT AN OPTICAL LIGHT POWER OF DBM FOR 675 NM AND DBM FOR 850 NM Tab. 3: BANDWIDTHS IN MHZ FOR THREE PHOTOTRANSISTORS AT 675 NM (TOP-TABLE) AND 850 NM (BOTTOM-TABLE) AT AN OPTICAL LIGHT POWER OF DBM FOR 675 NM AND DBM FOR 850 NM V. ACKNOWLEDGEMENTS VII. VITAE This work received funding from the Austrian Science Fund (FWF) in the project P21373-N22. VI. REFERENCES [1] H. Zimmermann, Integrated Silicon Optoelectronics, 2 nd ed., Springer-Verlag, Berlin, Heidelberg, [2] S. Cova, M. Ghioni, A. Lacaita, C. Samori and F. Zappa, Avalanche photodiodes and quenching circuits for single-photon detection, Applied Optics, vol. 35, no. 12, pp , [3] A. Pauchard, A. Rochas, Z. Randjelovic, P.A. Besse and R.S. Popovic, Ultraviolet Avalanche Photodiode in CMOS Technology, IEEE IEDM, 2000, pp [4] T. Yin, A. M. Pappu and A. B. Apsel, Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS, IEEE Photonics Technology Letters, vol. 18, no. 1, pp , [5] G. Winstel and C. Weyrich, Optoelektronik II, Springer-Verlag, Berlin, Heidelberg, 1986 [6] P. Gray, P. Hurst, S. Lewis and R. Meyer, Analysis and Design of analog integrated Circuits, Wiley, New York, 2008 Plamen Kostov graduated with distinction from the Vienna University of Technology in 2009 with a MSc. degree in electrical engineering. He joined the Institute of Electrodynamics, Microwave and Circuit Engineering at Vienna University of Technology in 2009 in order to pursuit the Ph.D. degree. His main interests include photodetectors and optoelectronic integrated circuit design. Wolfgang Gaberl started in telecommunication industry with design and realization of custom circuits for small PABX systems and technical consulting. He received the MSc. with distinction from the Vienna University of Technology, Austria. During the last years, he has been with the Vienna University of Technology, Austria. His major fields of interest are analog circuit design in general, photodetectors and integrated photoreceiver design. Dr. Horst Zimmermann, received the diploma in Physics in 1984 from the Univ. of Bayreuth, Germany and the Dr.- Ing. degree in the Frauenhofer Inst. for Integrated Circuits (IIS-B). Since 2000 he is full professor for Electronic Circuit Engineering at Vienna Univ. of Technology, Austria. He is author of the Springer books Integrated Silicon Optoelectronics, Silicon Optoelectronic Integrated Circuits and Highly Sensitive Optical Receivers. He is also author and co-author of more than 300 publications. IEEE Senior Member since
Solid-State Electronics
Solid-State Electronics 65 66 (2011) 211 218 Contents lists available at ScienceDirect Solid-State Electronics journal homepage: www.elsevier.com/locate/sse Visible and NIR integrated Phototransistors
More informationSensors and Actuators A: Physical
Sensors and Actuators A 172 (2011) 140 147 Contents lists available at ScienceDirect Sensors and Actuators A: Physical j ourna l h o me pa ge: www.elsevier.com/locate/sna Phototransistors for CMOS Optoelectronic
More informationOptics & Laser Technology
Optics & Laser Technology 46 (2013) 6 13 Contents lists available at SciVerse ScienceDirect Optics & Laser Technology journal homepage: www.elsevier.com/locate/optlastec High-speed bipolar phototransistors
More informationLecture 18: Photodetectors
Lecture 18: Photodetectors Contents 1 Introduction 1 2 Photodetector principle 2 3 Photoconductor 4 4 Photodiodes 6 4.1 Heterojunction photodiode.................... 8 4.2 Metal-semiconductor photodiode................
More informationOptical Receivers Theory and Operation
Optical Receivers Theory and Operation Photo Detectors Optical receivers convert optical signal (light) to electrical signal (current/voltage) Hence referred O/E Converter Photodetector is the fundamental
More informationCONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
More informationINTEGRATED PHOTODIODES IN NANOMETER CMOS TECHNOLOGIES
INTEGRATED PHOTODIODES IN NANOMETER CMOS TECHNOLOGIES Abstract Mohamed Atef Senior Member IEEE Electrical Engineering Department, Assiut University, Assiut, Egypt, moh_atef@au.edu.eg The main speed limitations
More informationKey Questions ECE 340 Lecture 28 : Photodiodes
Things you should know when you leave Key Questions ECE 340 Lecture 28 : Photodiodes Class Outline: How do the I-V characteristics change with illumination? How do solar cells operate? How do photodiodes
More informationOptical Fiber Communication Lecture 11 Detectors
Optical Fiber Communication Lecture 11 Detectors Warriors of the Net Detector Technologies MSM (Metal Semiconductor Metal) PIN Layer Structure Semiinsulating GaAs Contact InGaAsP p 5x10 18 Absorption InGaAs
More informationChap14. Photodiode Detectors
Chap14. Photodiode Detectors Mohammad Ali Mansouri-Birjandi mansouri@ece.usb.ac.ir mamansouri@yahoo.com Faculty of Electrical and Computer Engineering University of Sistan and Baluchestan (USB) Design
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationPhotodiode: LECTURE-5
LECTURE-5 Photodiode: Photodiode consists of an intrinsic semiconductor sandwiched between two heavily doped p-type and n-type semiconductors as shown in Fig. 3.2.2. Sufficient reverse voltage is applied
More informationUNIT III. By Ajay Kumar Gautam Asst. Prof. Electronics & Communication Engineering Dev Bhoomi Institute of Technology & Engineering, Dehradun
UNIT III By Ajay Kumar Gautam Asst. Prof. Electronics & Communication Engineering Dev Bhoomi Institute of Technology & Engineering, Dehradun SYLLABUS Optical Absorption in semiconductors, Types of Photo
More informationOptical Amplifiers. Continued. Photonic Network By Dr. M H Zaidi
Optical Amplifiers Continued EDFA Multi Stage Designs 1st Active Stage Co-pumped 2nd Active Stage Counter-pumped Input Signal Er 3+ Doped Fiber Er 3+ Doped Fiber Output Signal Optical Isolator Optical
More informationA silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product
A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product Myung-Jae Lee and Woo-Young Choi* Department of Electrical and Electronic Engineering,
More informationSilicon Avalanche Photodetectors Fabricated With Standard CMOS/BiCMOS Technology Myung-Jae Lee
Silicon Avalanche Photodetectors Fabricated With Standard CMOS/BiCMOS Technology Myung-Jae Lee The Graduate School Yonsei University Department of Electrical and Electronic Engineering Silicon Avalanche
More informationAvalanche Photodiode. Instructor: Prof. Dietmar Knipp Presentation by Peter Egyinam. 4/19/2005 Photonics and Optical communicaton
Avalanche Photodiode Instructor: Prof. Dietmar Knipp Presentation by Peter Egyinam 1 Outline Background of Photodiodes General Purpose of Photodiodes Basic operation of p-n, p-i-n and avalanche photodiodes
More informationLecture 9 External Modulators and Detectors
Optical Fibres and Telecommunications Lecture 9 External Modulators and Detectors Introduction Where are we? A look at some real laser diodes. External modulators Mach-Zender Electro-absorption modulators
More informationSection 2.3 Bipolar junction transistors - BJTs
Section 2.3 Bipolar junction transistors - BJTs Single junction devices, such as p-n and Schottkty diodes can be used to obtain rectifying I-V characteristics, and to form electronic switching circuits
More informationDetectors for Optical Communications
Optical Communications: Circuits, Systems and Devices Chapter 3: Optical Devices for Optical Communications lecturer: Dr. Ali Fotowat Ahmady Sep 2012 Sharif University of Technology 1 Photo All detectors
More informationUltra-sensitive SiGe Bipolar Phototransistors for Optical Interconnects
Ultra-sensitive SiGe Bipolar Phototransistors for Optical Interconnects Michael Roe Electrical Engineering and Computer Sciences University of California at Berkeley Technical Report No. UCB/EECS-2012-123
More informationEquivalent circuit modeling of InP/InGaAs Heterojunction Phototransistor for application of Radio-on-fiber systems
Equivalent circuit modeling of InP/InGaAs Heterojunction Phototransistor for application of Radio-on-fiber systems Jae-Young Kim The Graduate School Yonsei University Department of Electrical and Electronic
More informationInvestigate the characteristics of PIN Photodiodes and understand the usage of the Lightwave Analyzer component.
PIN Photodiode 1 OBJECTIVE Investigate the characteristics of PIN Photodiodes and understand the usage of the Lightwave Analyzer component. 2 PRE-LAB In a similar way photons can be generated in a semiconductor,
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationDevelopment of the Pixelated Photon Detector. Using Silicon on Insulator Technology. for TOF-PET
July 24, 2015 Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET A.Koyama 1, K.Shimazoe 1, H.Takahashi 1, T. Orita 2, Y.Arai 3, I.Kurachi 3, T.Miyoshi 3, D.Nio
More informationA flexible compact readout circuit for SPAD arrays ABSTRACT Keywords: 1. INTRODUCTION 2. THE SPAD 2.1 Operation 7780C - 55
A flexible compact readout circuit for SPAD arrays Danial Chitnis * and Steve Collins Department of Engineering Science University of Oxford Oxford England OX13PJ ABSTRACT A compact readout circuit that
More informationFundamentals of CMOS Image Sensors
CHAPTER 2 Fundamentals of CMOS Image Sensors Mixed-Signal IC Design for Image Sensor 2-1 Outline Photoelectric Effect Photodetectors CMOS Image Sensor(CIS) Array Architecture CIS Peripherals Design Considerations
More informationReview Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Current Transport: Diffusion, Thermionic Emission & Tunneling For Diffusion current, the depletion layer is
More informationVALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6201 ELECTRONIC DEVICES SEM / YEAR: II / I year B.E.ECE
More informationSilicon Avalanche Photodiode SAE-Series (NIR-Enhanced)
Silicon Avalanche Photodiode SAE-Series (NIR-Enhanced) Description The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and
More informationNON-AMPLIFIED PHOTODETECTOR USER S GUIDE
NON-AMPLIFIED PHOTODETECTOR USER S GUIDE Thank you for purchasing your Non-amplified Photodetector. This user s guide will help answer any questions you may have regarding the safe use and optimal operation
More informationUNIT 3 Transistors JFET
UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It
More informationFigure Responsivity (A/W) Figure E E-09.
OSI Optoelectronics, is a leading manufacturer of fiber optic components for communication systems. The products offer range for Silicon, GaAs and InGaAs to full turnkey solutions. Photodiodes are semiconductor
More informationPhysics and Technology
Physics and Technology Emitters Materials Infrared emitting diodes (IREDs) can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, the compound III-V semiconductors
More informationNON-AMPLIFIED HIGH SPEED PHOTODETECTOR USER S GUIDE
NON-AMPLIFIED HIGH SPEED PHOTODETECTOR USER S GUIDE Thank you for purchasing your Non-amplified High Speed Photodetector. This user s guide will help answer any questions you may have regarding the safe
More informationFigure Figure E E-09. Dark Current (A) 1.
OSI Optoelectronics, is a leading manufacturer of fiber optic components for communication systems. The products offer range for Silicon, GaAs and InGaAs to full turnkey solutions. Photodiodes are semiconductor
More informationHigh Speed pin Photodetector with Ultra-Wide Spectral Responses
High Speed pin Photodetector with Ultra-Wide Spectral Responses C. Tam, C-J Chiang, M. Cao, M. Chen, M. Wong, A. Vazquez, J. Poon, K. Aihara, A. Chen, J. Frei, C. D. Johns, Ibrahim Kimukin, Achyut K. Dutta
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationSolar Cell Parameters and Equivalent Circuit
9 Solar Cell Parameters and Equivalent Circuit 9.1 External solar cell parameters The main parameters that are used to characterise the performance of solar cells are the peak power P max, the short-circuit
More informationOPTOELECTRONIC and PHOTOVOLTAIC DEVICES
OPTOELECTRONIC and PHOTOVOLTAIC DEVICES Outline 1. Introduction to the (semiconductor) physics: energy bands, charge carriers, semiconductors, p-n junction, materials, etc. 2. Light emitting diodes Light
More informationSNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector
SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector Jin-Sung Youn, 1 Myung-Jae Lee, 1 Kang-Yeob Park, 1 Holger Rücker, 2 and Woo-Young Choi 1,* 1 Department of Electrical
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationMechanis m Faliures. Group Leader Jepsy 1)Substrate Biasing 2) Minority Injection. Bob 1)Minority-Carrier Guard Rings
Mechanis m Faliures Group Leader Jepsy 1)Substrate Biasing 2) Minority Injection As im 1)Types Of Guard Rings Sandra 1)Parasitics 2)Field Plating Bob 1)Minority-Carrier Guard Rings Shawn 1)Parasitic Channel
More informationSSRG International Journal of Medical Science (SSRG-IJMS) volume1 issue1 August 2014
Design of CMOS Avalanche Photodiode for Embedded Laser Range Finder Irfan Abdul Bari Stud. Dept. of ECE, Shadan college of engineering and Technology Hyderabad, India Prof. Abdul Mubeen Dept. of ECE Shadan
More informationPhysics of Waveguide Photodetectors with Integrated Amplification
Physics of Waveguide Photodetectors with Integrated Amplification J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers Electrical and Computer Engineering Department University of California, Santa
More information14.2 Photodiodes 411
14.2 Photodiodes 411 Maximum reverse voltage is specified for Ge and Si photodiodes and photoconductive cells. Exceeding this voltage can cause the breakdown and severe deterioration of the sensor s performance.
More informationExamination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade:
Examination Optoelectronic Communication Technology April, 26 Name: Student ID number: OCT : OCT 2: OCT 3: OCT 4: Total: Grade: Declaration of Consent I hereby agree to have my exam results published on
More informationBipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
More informationLecture 8 Optical Sensing. ECE 5900/6900 Fundamentals of Sensor Design
ECE 5900/6900: Fundamentals of Sensor Design Lecture 8 Optical Sensing 1 Optical Sensing Q: What are we measuring? A: Electromagnetic radiation labeled as Ultraviolet (UV), visible, or near,mid-, far-infrared
More informationMechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2
Mechatronics and Measurement Lecturer:Dung-An Wang Lecture 2 Lecture outline Reading:Ch3 of text Today s lecture Semiconductor 2 Diode 3 4 Zener diode Voltage-regulator diodes. This family of diodes exhibits
More informationOFCS OPTICAL DETECTORS 11/9/2014 LECTURES 1
OFCS OPTICAL DETECTORS 11/9/2014 LECTURES 1 1-Defintion & Mechanisms of photodetection It is a device that converts the incident light into electrical current External photoelectric effect: Electrons are
More informationElectronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions
Electronic-Photonic ICs for Low Cost and Scalable Datacenter Solutions Christoph Theiss, Director Packaging Christoph.Theiss@sicoya.com 1 SEMICON Europe 2016, October 27 2016 Sicoya Overview Spin-off from
More informationHeinrich-Hertz-Institut Berlin
NOVEMBER 24-26, ECOLE POLYTECHNIQUE, PALAISEAU OPTICAL COUPLING OF SOI WAVEGUIDES AND III-V PHOTODETECTORS Ludwig Moerl Heinrich-Hertz-Institut Berlin Photonic Components Dept. Institute for Telecommunications,,
More informationPHYSICS OF SEMICONDUCTOR DEVICES
PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES by J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical
More informationDownloaded from
Question 14.1: In an n-type silicon, which of the following statement is true: (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent
More informationChapter 6. Silicon-Germanium Technologies
Chapter 6 licon-germanium Technologies 6.0 Introduction The design of bipolar transistors requires trade-offs between a number of parameters. To achieve a fast base transit time, hence achieving a high
More informationPower Bipolar Junction Transistors (BJTs)
ECE442 Power Semiconductor Devices and Integrated Circuits Power Bipolar Junction Transistors (BJTs) Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Bipolar Junction Transistor (BJT) Background The
More informationInGaAs Avalanche Photodiode. IAG-Series
InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout
More informationFIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 20
FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 20 Photo-Detectors and Detector Noise Fiber Optics, Prof. R.K. Shevgaonkar, Dept.
More informationLAB V. LIGHT EMITTING DIODES
LAB V. LIGHT EMITTING DIODES 1. OBJECTIVE In this lab you will measure the I-V characteristics of Infrared (IR), Red and Blue light emitting diodes (LEDs). Using a photodetector, the emission intensity
More informationSimulation of High Resistivity (CMOS) Pixels
Simulation of High Resistivity (CMOS) Pixels Stefan Lauxtermann, Kadri Vural Sensor Creations Inc. AIDA-2020 CMOS Simulation Workshop May 13 th 2016 OUTLINE 1. Definition of High Resistivity Pixel Also
More informationA New Single-Photon Avalanche Diode in 90nm Standard CMOS Technology
A New Single-Photon Avalanche Diode in 90nm Standard CMOS Technology Mohammad Azim Karami* a, Marek Gersbach, Edoardo Charbon a a Dept. of Electrical engineering, Technical University of Delft, Delft,
More informationfor optical communication system
High speed Ge waveguide detector for optical communication system Xingjun Wang, Zhijuan Tu and Zhiping Zhou State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics
More informationNew advances in silicon photonics Delphine Marris-Morini
New advances in silicon photonics Delphine Marris-Morini P. Brindel Alcatel-Lucent Bell Lab, Nozay, France New Advances in silicon photonics D. Marris-Morini, L. Virot*, D. Perez-Galacho, X. Le Roux, D.
More informationHIGH SPEED FIBER PHOTODETECTOR USER S GUIDE
HIGH SPEED FIBER PHOTODETECTOR USER S GUIDE Thank you for purchasing your High Speed Fiber Photodetector. This user s guide will help answer any questions you may have regarding the safe use and optimal
More informationCMOS 0.18 m SPAD. TowerJazz February, 2018 Dr. Amos Fenigstein
CMOS 0.18 m SPAD TowerJazz February, 2018 Dr. Amos Fenigstein Outline CMOS SPAD motivation Two ended vs. Single Ended SPAD (bulk isolated) P+/N two ended SPAD and its optimization Application of P+/N two
More informationMOSFET short channel effects
MOSFET short channel effects overview Five different short channel effects can be distinguished: velocity saturation drain induced barrier lowering (DIBL) impact ionization surface scattering hot electrons
More information12 Examples of Optoelectronic Integrated Circuits
12 Examples of Optoelectronic Integrated Circuits In this chapter the full variety of receiver OEICs in digital and analog techniques will be introduced. Examples of optical receivers range from low-power
More informationLEDs, Photodetectors and Solar Cells
LEDs, Photodetectors and Solar Cells Chapter 7 (Parker) ELEC 424 John Peeples Why the Interest in Photons? Answer: Momentum and Radiation High electrical current density destroys minute polysilicon and
More informationIntroduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationLAB V. LIGHT EMITTING DIODES
LAB V. LIGHT EMITTING DIODES 1. OBJECTIVE In this lab you are to measure I-V characteristics of Infrared (IR), Red and Blue light emitting diodes (LEDs). The emission intensity as a function of the diode
More informationLecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1
Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1 LECTURE 190 CMOS TECHNOLOGY-COMPATIBLE DEVICES (READING: Text-Sec. 2.9) INTRODUCTION Objective The objective of this presentation is
More informationOptical wireless communication using a fully integrated 400 µm diameter APD receiver
Optical wireless communication using a fully integrated 400 µm diameter APD receiver Dinka Milovancěv, Tomislav Jukic, Bernhard Steindl, Paul Brandl, Horst Zimmermann Institute of Electrodynamics, Microwave
More informationSilicon sensors for radiant signals. D.Sc. Mikko A. Juntunen
Silicon sensors for radiant signals D.Sc. Mikko A. Juntunen 2017 01 16 Today s outline Introduction Basic physical principles PN junction revisited Applications Light Ionizing radiation X-Ray sensors in
More informationLecture Course. SS Module PY4P03. Dr. P. Stamenov
Semiconductor Devices - 2013 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 01 st of Feb 13 Diode Current Components
More informationDesign and Simulation of N-Substrate Reverse Type Ingaasp/Inp Avalanche Photodiode
International Refereed Journal of Engineering and Science (IRJES) ISSN (Online) 2319-183X, (Print) 2319-1821 Volume 2, Issue 8 (August 2013), PP.34-39 Design and Simulation of N-Substrate Reverse Type
More informationLecture Notes 5 CMOS Image Sensor Device and Fabrication
Lecture Notes 5 CMOS Image Sensor Device and Fabrication CMOS image sensor fabrication technologies Pixel design and layout Imaging performance enhancement techniques Technology scaling, industry trends
More information2.8 - CMOS TECHNOLOGY
CMOS Technology (6/7/00) Page 1 2.8 - CMOS TECHNOLOGY INTRODUCTION Objective The objective of this presentation is: 1.) Illustrate the fabrication sequence for a typical MOS transistor 2.) Show the physical
More informationQUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor.
FATIMA MICHAEL COLLEGE OF ENGINEERING & TECHNOLOGY Senkottai Village, Madurai Sivagangai Main Road, Madurai - 625 020. [An ISO 9001:2008 Certified Institution] QUESTION BANK EC6201 ELECTRONIC DEVICES SEMESTER:
More informationFrequency Dependent Harmonic Powers in a Modified Uni-Traveling Carrier (MUTC) Photodetector
Naval Research Laboratory Washington, DC 2375-532 NRL/MR/5651--17-9712 Frequency Dependent Harmonic Powers in a Modified Uni-Traveling Carrier (MUTC) Photodetector Yue Hu University of Maryland Baltimore,
More informationLatchup prevention by using guard ring structures in a 0.8 µm bulk CMOS process
Latchup prevention by using guard ring structures in a 0.8 µm bulk CMOS process Felipe Coyotl Mixcoatl 1, Alfonso Torres Jacome Instituto Nacional de Astrofísica, Óptica y Electrónica Luis Enrique Erro
More informationOptical Communications
Optical Communications Telecommunication Engineering School of Engineering University of Rome La Sapienza Rome, Italy 2005-2006 Lecture #4, May 9 2006 Receivers OVERVIEW Photodetector types: Photodiodes
More informationActive Pixel Sensors Fabricated in a Standard 0.18 um CMOS Technology
Active Pixel Sensors Fabricated in a Standard.18 um CMOS Technology Hui Tian, Xinqiao Liu, SukHwan Lim, Stuart Kleinfelder, and Abbas El Gamal Information Systems Laboratory, Stanford University Stanford,
More informationA Millimeter-Wave Power Amplifier Concept in SiGe BiCMOS Technology for Investigating HBT Physical Limitations
A Millimeter-Wave Power Amplifier Concept in SiGe BiCMOS Technology for Investigating HBT Physical Limitations Jonas Wursthorn, Herbert Knapp, Bernhard Wicht Abstract A millimeter-wave power amplifier
More informationLecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI
Lecture: Integration of silicon photonics with electronics Prepared by Jean-Marc FEDELI CEA-LETI Context The goal is to give optical functionalities to electronics integrated circuit (EIC) The objectives
More informationECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline: Narrow-Base Diode BJT Fundamentals BJT Amplification Things you should know when you leave Key Questions How does the narrow-base diode multiply
More informationDesign and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias
Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias 13 September 2017 Konstantin Stefanov Contents Background Goals and objectives Overview of the work carried
More informationRoute Ain El-Bey, 25000, Constantine, Algéria 2 Professor, Laboratoire des Microsystèmeset Instrumentations (LMI), University of Constantine,
Modeling of a PIN Photodiode using the VHDL-AMS Language Fatima Zohra Baouche 1,2, Farida Hobar 1, Yannick Hervé 3 1 Phd Student, Laboratoire des Microsystèmeset Instrumentations (LMI), University of Constantine,
More informationEqualization of Integrated Optical Photodiodes using an Infinite Impulse Response Decision Feedback Equalizer. Hemesh Yasotharan
Equalization of Integrated Optical Photodiodes using an Infinite Impulse Response Decision Feedback Equalizer by Hemesh Yasotharan A thesis submitted in conformity with the requirements for the degree
More informationElectromagnetic spectrum
Slide 1 Electromagnetic spectrum insert wavelengths of blue to red. 6.071 Optoelectronics 1 Slide 2 Electromagnetic spectrum E = hν = kt e E - Energy k - Plank s constant ν - frequency k - Boltzman s constant
More informationPerformance of silicon micro ring modulator with an interleaved p-n junction for optical interconnects
Indian Journal of Pure & Applied Physics Vol. 55, May 2017, pp. 363-367 Performance of silicon micro ring modulator with an interleaved p-n junction for optical interconnects Priyanka Goyal* & Gurjit Kaur
More informationPhotonics and Optical Communication Spring 2005
Photonics and Optical Communication Spring 2005 Final Exam Instructor: Dr. Dietmar Knipp, Assistant Professor of Electrical Engineering Name: Mat. -Nr.: Guidelines: Duration of the Final Exam: 2 hour You
More informationCOMPARISON OF PT AND NPT CELL CONCEPT FOR 600V IGBTs
COMPARISON OF PT AND NPT CELL CONCEPT FOR 6V IGBTs R.Siemieniec, M.Netzel, * R.Herzer Technical University of Ilmenau, * SEMIKRON Elektronik GmbH Nürnberg, Germany Abstract. This paper presents a comparison
More informationA New SiGe Base Lateral PNM Schottky Collector. Bipolar Transistor on SOI for Non Saturating. VLSI Logic Design
A ew SiGe Base Lateral PM Schottky Collector Bipolar Transistor on SOI for on Saturating VLSI Logic Design Abstract A novel bipolar transistor structure, namely, SiGe base lateral PM Schottky collector
More informationUNIT VIII-SPECIAL PURPOSE ELECTRONIC DEVICES. 1. Explain tunnel Diode operation with the help of energy band diagrams.
UNIT III-SPECIAL PURPOSE ELECTRONIC DEICES 1. Explain tunnel Diode operation with the help of energy band diagrams. TUNNEL DIODE: A tunnel diode or Esaki diode is a type of semiconductor diode which is
More informationHIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS
HIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS J. Piprek, Y.-J. Chiu, S.-Z. Zhang (1), J. E. Bowers, C. Prott (2), and H. Hillmer (2) University of California, ECE Department, Santa Barbara, CA 93106
More informationAnalog & Digital Electronics Course No: PH-218
Analog & Digital Electronics Course No: PH-218 Lec-5: Bipolar Junction Transistor (BJT) Course nstructors: Dr. A. P. VAJPEY Department of Physics, ndian nstitute of Technology Guwahati, ndia 1 Bipolar
More informationObjective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.
Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have
More informationELEC 3908, Physical Electronics, Lecture 16. Bipolar Transistor Operation
ELEC 3908, Physical Electronics, Lecture 16 Bipolar Transistor Operation Lecture Outline Last lecture discussed the structure and fabrication of a double diffused bipolar transistor Now examine current
More information