. HIGH SPEED .LOW POWER DISSIPATION .COMPATIBLE WITH TTL OUTPUTS M54HCT04 M74HCT04 HEX INVERTER. tpd = 8 ns (TYP.) AT VCC =5V

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1 M54HCT04 M74HCT04 HEX INVERTER. HIGH SPEED tpd = 8 ns (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =1µA (MAX.) AT T A =25 C.COMPATIBLE WITH TTL OUTPUTS VIH = 2V (MIN.) VIL = 0.8V (MAX) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH =IOL = 4 ma (MIN.). BALANCED PROPAGATION DELAYS t PLH =t PHL PIN AND FUNCTION COMPATIBLE WITH 54/74LS04 DESCRIPTION The M54/74HCT04 is a high speed CMOS INVER- TER fabricated in silicon gate C 2 MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffered output, which gives high noise immunity and a stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. This integrated circuit has input and output characteristic that are fully compatible with 54/74 LSTTL logic families. M54HCT/74HCT devices are designed to directly interface HSC 2 MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption. B1R (Plastic Package) M1R (Micro Package) F1R (Ceramic Package) C1R (Chip Carrier) ORDER CODES : M54HCT04F1R M74HCT04M1R M74HCT04B1R M74HCT04C1R PIN CONNECTIONS (top view) INPUT AND OUTPUT EQUIVALENT CIRCUIT NC = No Internal Connection February /9

2 TRUTH TABLE IEC LOGIC SYMBOL A L H Y H L PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 3, 5, 9, 1A to 6A Data Inputs 11, 13 2, 4, 6, 8, 1Y to 6Y Data Outputs 10, 12 7 GND Ground (0V) 14 VCC Positive Supply Voltage LOGIC DIAGRAM (Per Gate) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V V I DC Input Voltage -0.5 to V CC V VO DC Output Voltage -0.5 to VCC V I IK DC Input Diode Current ± 20 ma I OK DC Output Diode Current ± 20 ma IO DC Output Source Sink Current Per Output Pin ± 25 ma I CC or I GND DC V CC or Ground Current ± 50 ma P D Power Dissipation 500 (*) mw Tstg Storage Temperature -65 to +150 o C T L Lead Temperature (10 sec) 300 o C Absolute MaximumRatings are those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied. (*) 500 mw: 65 o C derate to 300 mw by 10mW/ o C: 65 o Cto85 o C 2/9

3 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 4.5 to 5.5 V V I Input Voltage 0 to V CC V VO Output Voltage 0 to VCC V Top Operating Temperature: M54HC Series -55 to +125 M74HC Series -40 to +85 o C C t r,t f Input Rise and Fall Time (V CC = 4.5 to 5.5V) 0 to 500 ns DC SPECIFICATIONS Symbol V IH V IL V OH VOL II ICC I CC Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Additional worst case supply current VCC (V) 4.5 to to Test Conditions V I = V IH or VIL VI = V IH or V IL TA =25 o C 54HC and 74HC Value -40 to 85 o C 74HC -55 to 125 o C 54HC Min. Typ. Max. Min. Max. Min. Max. Unit V V I O =-20 µa I O =-4.0 ma IO= 20µA IO= 4.0 ma VI =VCC or GND ±0.1 ±1 ±1 µa 5.5 VI = VCC or GND µa 5.5 Per Input pin VI = 0.5V or VI = 2.4V Other Inputs at V CC or GND I O = ma V V 3/9

4 AC ELECTRICAL CHARACTERISTICS (CL =50pF,Inputtr=tf=6ns) Symbol t TLH t THL tplh t PHL Parameter Output Transition Time Propagation Delay Time VCC (V) Test Conditions TA =25 o C 54HC and 74HC Value -40 to 85 o C 74HC -55 to 125 o C 54HC Min. Typ. Max. Min. Max. Min. Max ns ns CIN Input Capacitance pf C PD (*) Power Dissipation 20 pf Capacitance (*) C PD is defined as the value of the IC s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. I CC(opr) = C PD V CC f IN +I CC/6 (per Gate) Unit SWITCHING CHARACTERISTICS TEST CIRCUIT TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM 4/9

5 Plastic DIP14 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. a B b b D E e e F I L Z P001A 5/9

6 Ceramic DIP14/1 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E e F G H L M N P Q P053C 6/9

7 SO14 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A a a b b C c1 45 (typ.) D E e e F G L M S 8 (max.) P013G 7/9

8 PLCC20 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D d d E e e F G M M P027A 8/9

9 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9