Underground M3 progress meeting 16 th month --- Strain sensors development IMM Bologna
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1 Underground M3 progress meeting 16 th month --- Strain sensors development IMM Bologna Matteo Ferri, Alberto Roncaglia Institute of Microelectronics and Microsystems (IMM) Bologna Unit
2 OUTLINE MEMS Action list (IMM): Send.gds file of all devices currently available to Cambridge. Get DC testing of devices working on Bologna probe station (i.e. ability to see MEMs move by applying DC voltages and looking down microscope). Validate lab-based based strain testing setup using conventional strain sensors. Look into possible glues for sticking MEMs devices to steel (ideally( want very strong bond and very thin layer). Begin experiments with packaging devices try encapsulation of bonds, try experiments with wafer level packaging. If there are issues with existing devices perform design iteration on process. 2
3 OUTLINE MEMS Action list (IMM): Send.gds file of all devices currently available to Cambridge. Get DC testing of devices working on Bologna probe station (i.e. ability to see MEMs move by applying DC voltages and looking down microscope). Validate lab-based based strain testing setup using conventional strain sensors. Look into possible glues for sticking MEMs devices to steel (ideally( want very strong bond and very thin layer). Begin experiments with packaging devices try encapsulation of bonds, try experiments with wafer level packaging. If there are issues with existing devices perform design iteration on process. 3
4 OUTLINE MEMS Action list (IMM): Send.gds file of all devices currently available to Cambridge. Get DC testing of devices working on Bologna probe station (i.e. ability to see MEMs move by applying DC voltages and looking down microscope). Validate lab-based based strain testing setup using conventional strain sensors. Look into possible glues for sticking MEMs devices to steel (ideally( want very strong bond and very thin layer). Begin experiments with packaging devices try encapsulation of bonds, try experiments with wafer level packaging. If there are issues with existing devices perform design iteration on process. 4
5 Device DC Testing SEM measurement setup using micromanipulators for electrical probing 5
6 IMM Bologna Device DC Testing Experiment 1: DETF DC lateral actuation (L = 500 µm) DETF Cursor Width = nm Actuator DETF Substrate Cursor Width = nm R2 R1 Substrate Voltage = 0 V C3 R3 C2 VDC Voltage = 26 V Actuator 6
7 Lateral actuation up to contact DETF R 1 R 2 Device DC Testing Device failure induced by electrode contact C 3 C 2 V DC Substrate R 3 Actuator Measured short circuit current Current (A) Lateral contact Voltage (V) 7
8 Device DC Testing DETF vertical actuation: Measured short circuit current DETF V DC R 1 Substrate R 3 C 3 C 2 R 2 Actuator Current (A) Vertical contact Voltage (V) Short circuit due to vertical contact is nondestructive (the DETF F acts as an electromechanical switch!). This is probably due to the high resistivity of the silicon bulk which limits the discharge current. 8
9 Conclusions (DC Testing) Released devices are mobile both laterally and vertically with DC actuation. Electrode lateral contact during actuation is destructive due to the high short- circuit current. Electrode vertical contact gives rise to lower short-circuit current probably because of the limiting effect owing to the high-resistivity substrate, so it is nondestructive (DETF behaves as an electro-mechanical switch). In order to avoid short-circuits, the DC operation voltage should be limited to roughly 25 V. 9
10 OUTLINE MEMS Action list (IMM): Send.gds file of all devices currently available to Cambridge. Get DC testing of devices working on Bologna probe station (i.e. ability to see MEMs move by applying DC voltages and looking down microscope). Validate lab-based based strain testing setup using conventional strain sensors. Look into possible glues for sticking MEMs devices to steel (ideally( want very strong bond and very thin layer). Begin experiments with packaging devices try encapsulation of bonds, try experiments with wafer level packaging. If there are issues with existing devices perform design iteration on process. 10
11 Lab-based strain testing setup Strain Measurement Setup Validation Strain: ε = 3 (L - x) ty 3 2 L L: Bar lenght T: Thickness y: bar inflection X: gauge position
12 Experimental setup (1) Strain Measurement Setup Validation Commercial strain gauge P Strain Gauge Adhesive (M-Bond200 /M-Bond600) Aluminum/steel bar Electrical connections: The strain gauge is connected in a Wheatstone bridge configuration along with reference resistors. The bridge is biased with a 5V DC supply. R 1 R 3 R 2 R wire1 R wire2 Rgauge 12
13 Strain Measurement Setup Validation Stress generation from bar inflection: the measured strain (commercial strain gauge with adhesive bonding to the bar) is compared with the expected ected stress value from the theoretical model. Results: the measured strain is close to the theoretical value, in different positions along the bar. Some deviations exist due to uncertainties in model parameters (e.g. sensor position, bar geometry etc.). Strain (µs) L=40 mm c t=4mm Adhesive= M-bond200 Theoretical Exp 1/2 L Exp 3/4 L Strain position: 1/2 L Strain position: 3/4 L Inflection (mm) 13
14 Conclusions (Setup validation) The generated strain measured with commercial piezoresistive sensors glued on a metal bar is close to the expected value from theory. Deviations from ideality exist probably due to the inherent uncertainties of some parameters in the theoretical model (e.g. geometrical dimensions). A better calibration confidence could be achieved by using a geometry independent measurement setup, such as a tensile testing specimen (collaboration planned with Cambridge group to implement a tensile testing setup for sensor calibration). 14
15 OUTLINE MEMS Action list (IMM): Send.gds file of all devices currently available to Cambridge. Get DC testing of devices working on Bologna probe station (i.e. ability to see MEMs move by applying DC voltages and looking down microscope). Validate lab-based based strain testing setup using conventional strain sensors. Look into possible glues for sticking MEMs devices to steel (ideally( want very strong bond and very thin layer). Begin experiments with packaging devices try encapsulation of bonds, try experiments with wafer level packaging. If there are issues with existing devices perform design iteration on process. 15
16 Glues for Sticking MEMS Devices To Steel Strain sensors: CEA UN-120 Vishay 11-FA FA RS Components Adhesives: M-Bond200, two-component cyanoacrylate M-Bond600, two-component epoxy Experimental setup (2) Commercial strain gauge P Strain Gauge Adhesive (M-Bond200 /M-Bond600) Silicon die Adhesive (M-Bond200 /M-Bond600) Aluminum/steel bar 16
17 Glues for Sticking MEMS Devices To Steel SEM observations of silicon on silicon glued samples (cross-sections): sections): the glue layer thickness depends on the adhesive type (MBond( 600 yields thinner layers) MBond 600 MBond
18 Glues for Sticking MEMS Devices To Steel Glue/silicon stress transfer was measured on strain gauge/silicon n samples on the inflection bar setup. A good stress coupling is maintained although the presence of silicon s gives rise to some attenuation (the measured strain turns out to be about % lower than the direct coupling case). 300 L=40 mm c t=4mm Strain (µs) Strain Gauge Position 3/4 L Inflection (mm) Theoretical N11-FA CEA UN-120 CEA UN-120 on silicon (MBond 600). CEA UN-120 on silicon (MBond 200). 18
19 Conclusions (Glues for MEMS/steel) The glues recommended for commercial piezoresistive sensors can be used also for silicon/steel attachment. The glue layer is thinner for epoxy adhesive with respect to cyanoacrylate. The stress transfer, measured using a commercial strain gauge glued on a silicon die fixed on the test bar is around 70 80% of the direct coupling case. 19
20 OUTLINE MEMS Action list (IMM): Send.gds file of all devices currently available to Cambridge. Get DC testing of devices working on Bologna probe station (i.e. ability to see MEMs move by applying DC voltages and looking down microscope). Validate lab-based based strain testing setup using conventional strain sensors. Look into possible glues for sticking MEMs devices to steel (ideally( want very strong bond and very thin layer). Begin experiments with packaging devices try encapsulation of bonds, try experiments with wafer level packaging. If there are issues with existing devices perform design iteration on process. 20
21 Packaging scheme: Packaging Experiments Wire bonding Transducer housing Housing Strain Gauge Support bar Glue Polimeric coating Strain Gauge Adhesive Glue 21
22 Packaging Experiments 22
23 Packaging Experiments Steel bar glued MEMS device connection with PCB using wire bonding ng DETF sensor Al wire Bonding pads 23
24 Packaging Experiments Wire bonded and packaged prototype on steel bar 24
25 Conclusions (Packaging) The MEMS devices, once glued on the steel specimen, have been successfully wire bonded to a PCB attached to the specimen. Water-proof encapsulation of the MEMS device and the bonding wires is possible by using a thick plexiglass cap sealed with glue without affecting the electrical connectivity. 25
26 OUTLINE MEMS Action list (IMM): Send.gds file of all devices currently available to Cambridge. Get DC testing of devices working on Bologna probe station (i.e. ability to see MEMs move by applying DC voltages and looking down microscope). Validate lab-based based strain testing setup using conventional strain sensors. Look into possible glues for sticking MEMs devices to steel (ideally( want very strong bond and very thin layer). Begin experiments with packaging devices try encapsulation of bonds, try experiments with wafer level packaging. If there are issues with existing devices perform design iteration on process. 26
27 Tensile Test for MEMS Yusuke Kobayashi University of Cambridge 21 st, Feb, 2008
28 It can be considered as the reason that this test contains below several errors. [Conceivable error factors] - Thickness 4mm of steel/aluminum bar (bit thin) can not curve ideal moment. can have torsional strain. - Measurement error of displacement - Longitudinal location of strain gauge - Gauge length of strain gauge - Glue between silicon and steel bar Silicon bulk Conventional strain Loading Support Plate (thickness = 4mm) Displacement
29 Tensile Test ( Uniform Strain Distribution ) Tensile specimen A-A Steel Silicon Bulk Conventional strain gauge A A Comparing Steel, t = 10mm? Strain on steel plate
30 It can be considered as the reason that this test contains below several errors. [Conceivable error factors] - Thickness 4mm of steel/aluminum bar (bit thin) can not curve ideal moment. can have torsional strain. - Measurement error of displacement - Longitudinal location of strain gauge - Gauge length of strain gauge - Glue between silicon and steel bar Silicon bulk Conventional strain Loading Support Plate (thickness = 4mm) Displacement
31 Parameters [Silicon Bulk] Size : 3 types -- 5*5mm, 10*10mm, 20*20mm Thickness : 3 types µm, 300µm, 500µm [Glue] 2 types -- M-bond600 (thickness 5µm), M-bond200(thickness 33µm) Steel Specimen Thickness :1/2 inch (12.7 mm) Width :3 inch (75.2 mm) Length :400 mm Specimen01,02 : for M-bond600 Specimen03 : for M-bond300
32 Layout of Silicon Bulks and Strain Gauges Strain gauges on steel plate Strain gauges on silicon bulk Thickness 100 µm µm µm (3 inch) 76.2 (3 inch)
33 MEMS strain sensors - update Contributors: Joshua Lee, James Ransley, Gary Choy, Behraad Bahreyni Ashwin Seshia and Kenichi Soga Cambridge University Nanoscience Centre Department of Engineering
34 Micromachined Silicon Resonant Strain Gauge DETF Electrode Vibration direction Strain sensitive ω = f(ε) Electrode Double-ended Tuning Fork Device (DETF) Resolution < 1µε ω Resonance Tine displacement Gain ε = 0 ε > 0 Optimum Mode for the DETF Frequency
35 MEMS Resonant Strain Gauges Multi-axis sensing of strain Temperature compensation Capped under vacuum Polysilicon surface micromachining
36 Optical Micrograph
37 Process cross-section
38 Open-loop test setup
39 Open-loop measurements
40 Extraction of resonant response Q=80000 k
41 Oscillator Block Diagram
42 Oscillator output
43 Strain Sensors Initial Results Measured sensitivity of 151 Hz/µε is in excellent agreement with the predicted value 149 Hz/µε
44 Summary Functional double-ended tuning forks. Strain equivalent resolution: 23 pε over a 0.1 second averaging time. Packaging: Solutions for electrical and vacuum packaging being investigated. Next stages Packaging Models for mechanical strain coupling to sensor Test setup
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