Electronic Characterization of Materials Using Conductive AFM
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1 Electronic Characterization of Materials Using Conductive AFM Amir Moshar
2 Electrical Measurements SKPM EFM CAFM PFM SCM
3 Non-Contact Electrical Techniques Scanning Kelvin Probe Microscopy Electric Force Microscopy Both use nap mode
4 What is Nap Mode? A two pass data collection scheme z 1 1 Topography -- trace out the topography Nap -- non contact, above the surface. EFM, MFM, or SKPM
5 EFM Photodetector Signal DAC ADC AC mode +nap +tip-sample bias =EFM Sample Tip bias voltage i Sine Wave Synthesizer V d cosωt X LPF Amp = i + q R V d sinωt X LPF 1 q φ = tan i φ q
6 Model the Tip-Sample as a Capacitor To bring charge element dq to the positive electrode at potential V you need energy du du = Vdq V = q C q du = dq, C U = Q q 1 Q dq = = 0 C C 1 CV
7 EFM Phase Contrast U U total total = = 1 1 kx kx Attractive + U + 1 sample C tip sample Repulsive V tip sample Amplitude 0nm Phase du F = dz 1 dc F = V dz 0 7 Attractive Attractive Repulsive Repulsive Drive Frequency Attractive Softens the potential well Positive Phase shift 76kHz Repulsive Sharpens the potential well Negative Phase Shift
8 Conductors in an Insulating/Semiconducting Matrix Field Lines Insulating Sample, no conductors Ground Plane Introduce a conductive particle and the field lines, and therefore the force gradient change. This results in a phase shift.
9 EFM on Embedded Conductive Nanoparticles Height EFM Amplitude Phase
10 Conductive Organic Nanorods in a Polymer Height Phase Sample courtesy Sergei Magonov, MI
11 SKPM Photodetector Signal ADC Cantilever driven electrically Potential difference between tip and sample drives cantilever Potential feedback loop cancels cantilever oscillations Sample DAC Potential feedback loop AC bias plus DC from FB loop to tip Sine Wave Synthesizer V d cosωt V d sinωt X X LPF LPF Amp = i + q 1 q φ = tan i i R φ q
12 A Bit of Math F = 1 dc V dz V = V SurfacePotential + V DC + V ac sinωt F total dc dz = F + F sin( ω t + φ ) + F cos(ωt + φ ) ( V V SurfacePotential DC 0 Potential ) V ac Feedback loop
13 What Does SKPM Tell You? Trapped Charge Spontaneous Polarization Work function variation Potential difference Q = CV and V = Q C
14 Samples for SKPM Insulators with trapped charge Work function differences on metals/semiconductors Ferroelectric materials Materials with a spontaneous polarization Layered materials Integrated circuits/micro circuits Solar/photoelectric materials Anything with a work function, charge or potential difference
15 Electronic Traces Broken Circuit Height Surface Potential No voltage after break!
16 MicroGels Three layers of microgels SKPM can detect the three different layers
17 Images Se nanowires, courtesy of Byron Gates at SFU
18 Contact Mode Electrical Techniques CAFM this includes all current/resistive probing PFM SCM
19 CAFM R gain Creates a current map of the surface Concuctive probe Gain is just R gain V R V V out gain out but V R so sample out in = = = R I V R gain = in R in sample I V R in gain in sample
20 CAFM Issues Contact resistance Oxidation/reduction Tip wear/contamination BW limitations Repeatability (statistics) Percolation network 1 R 1 1 = R R 1 tot 1 R n
21 Point and Click IV curves Current Topography, 10nm full scale Current, 10pA full scale Applied Voltage 1.5nm thick Europium-doped ZnO film imaged at a bias of 1.5 volts.
22 A B Point I-V Curves A B Channels A and B have different dopant concentrations Material on the surface is a contaminant that penetrates the oxide
23 Single Molecule CAFM on Polymers Data Courtesy Gilbert Walker, University of Toronto
24 Photocurrent and Statistics Courtesy Adam Lazareck and Jimmy Xu, Brown Univ.
25 Polymer Blend Solar Cells Sample Setup Data Courtesy David Ginger, University of Washington
26 A Probing Station Design based on one by Landon Prisbrey and Ethan Minot, Oregon State
27 IV Curves on CNTs EFM overlay on a grounded CNT Right side plate is floating, so there is no signal. Connected CNT shows electrical signal, indicating they are conductive Courtesy Landon Prisbrey and Ethan Minot, Oregon State
28 Single Frequency PFM (Piezo Force Microscopy) Strain = Bias d 33 In crystals, d 33 ranges from ~ pm/v (quartz) to ~500 pm/v (PZT) In PFM, we have Displacements of order of ~pm MFP3D AFM measures ~30pm (Cypher ~10pm) Reaching Noise limits!
29 Piezo Response Photodetector Signal AC deflection DC deflection HPF DAC ADC ADC AFM Feedback Contact Mode + AC bias to tip + Lock-in on AC deflection = Piezo Response Sample i Sine Wave Synthesizer V d cosωt V d sinωt X X LPF LPF Amp = i + q 1 q φ = tan i R φ q Applied Voltage Down Polarization Phase Lead Up Polarization Phase Lag
30 piezo-response force microscopy - pfm Amplitude: VPFM Phase PFM Topography Amplitude Phase Courtesy of S. Jesse. Oak Ridge National Laboratory
31 THE END
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