TITLE MICROCIRCUIT, LINEAR, 1-Mbps QUAD DIGITAL ISOLATORS, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DATE APPROVED REV PAGE REV PAGE REV

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1 REISIONS LTR DESCRIPTION DTE PPROED Prepared in accordance wih SME Y14.24 endor iem drawing RE PGE RE PGE RE STTUS OF PGES RE PGE PMIC N/ PREPRED BY Phu H. Nguyen DL LND ND MRITIME hp:// Original dae of drawing YY MM DD CHECKED BY Phu H. Nguyen PPROED BY Thomas M. Hess TITLE MICROCIRCUIT, LINER, 1-Mbps QUD DIGITL ISOLTORS, MONOLITHIC SILICON CODE IDENT. NO. 62/10606 RE PGE 1 OF 16 MSC N/

2 1. SCOPE 1.1 Scope. This drawing documens he general requiremens of a high performance 1-Mbps quad digial isolaors microcircui, wih an operaing emperaure range of -55 C o +125 C. 1.2 endor Iem Drawing dminisraive Conrol Number. The manufacurer s PIN is he iem of idenificaion. The vendor iem drawing esablishes an adminisraive conrol number for idenifying he iem on he engineering documenaion: Device ype(s). 62/ X E Drawing Device ype Case ouline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) Device ype Generic Circui funcion 01 ISO7241-EP 1-Mbps quad digial isolaors Case ouline(s). The case oulines are as specified herein. Ouline leer Number of pins JEDEC PUB 95 Package syle X 16 JEDEC MS-013- Plasic Small Ouline Package Lead finishes. The lead finishes are as specified below or oher lead finishes as provided by he device manufacurer: Finish designaor B C D E Z Maerial Ho solder dip Tin-lead plae Gold plae Palladium Gold flash palladium Oher DL LND ND MRITIME 62/10606 RE PGE 2

3 1.3 bsolue maximum raings. 1/ Supply volage, (, 1, 2) o 6.0 2/ olage a IN, OUT, EN ( I) o 6.0 Oupu curren, (I O)... ±15 m Elecrosaic discharge, (ESD), ll pins Human body Model (JEDEC Sandard 22, Tes Mehod 114C-01)... ±4 k Field Induced Charged Device (JEDEC Sandard 22, Tes mehod C101)... ±1 k Machine Model (NSI/ESDS )... ±200 Maximum juncion emperaure C 1.4 Recommended operaing condiions. 3/ Supply volage range, (, 1, 2) o 5.5 4/ Maximum high level oupu curren, (I OH)... 4 m Minimum low level oupu curren, (I OL) m Minimum inpu pulse widh, ( ui)... 1 µs Signaling rae (1/ ui)... 0 o 1000 kbps High level inpu volage, ( IH) (IN) (EN on all devices)... 2 o Low level inpu volage, ( IL) (IN) (EN on all devices)... 0 o 0.8 Maximum juncion emperaure C Maximum exernal magneic field-srengh immuniy per IEC and IEC cerificaion (H) /m Maximum device power dissipaion mw 5/ 1.5 Thermal characerisics. Parameer TYP Unis Juncion o air θ J Low K hermal resisance 6/ 168 C/W High K hermal resisance 96.1 Juncion o board hermal resisance, θ JB 61 Juncion o case hermal resisance, θ JC 48 1/ Sresses beyond hose lised under absolue maximum raings may cause permanen damage o he device. These are sress raings only, and funcional operaion of he device a hese or any oher condiions beyond hose indicaed under recommended operaing condiions is no implied. Exposure o absolue maximum raed condiions for exended periods may affec device reliabiliy. 2/ ll volage values are wih respec o nework ground erminal and are peak volage values. 3/ Use of his produc beyond he manufacurers design rules or saed parameers is done a he user s risk. The manufacurer and/or disribuor mainain no responsibiliy or liabiliy for produc used beyond he saed limis. 4/ For he 5- operaion, 1 or 2 is specified from 4.5 o 5.5. For he 3- operaion, 1 or 2 is specified from 3.15 o / 1 = 2 = 5.5, T J = 150 C, C L = 15 pf, Inpu a 50% duy cycle square wave. 6/ Tesed in accordance wih he Low-K or High-K hermal meric definiion EI/JESD51-3 for leaded surface moun packages. DL LND ND MRITIME 62/10606 RE PGE 3

4 2. PPLICBLE DOCUMENTS JEDEC SOLID STTE TECHNOLOGY SSOCITION (JEDEC) JEP95 Regisered and Sandard Oulines for Semiconducor Devices JESD22 Qualificaion Tesing for Plasic Encapsulaed Solid Sae Devices Elecro Saic Discharge (ESD) proecion. JESD51-3 Low Effecive Thermal Conduciviy Tes Board for Leaded Surface Moun Packages. (Copies of hese documens are available online a hp:/ or from JEDEC Solid Sae Technology ssociaion, 3103 Norh 10h Sree, Suie 240 S, rlingon, ). MERICN NTIONL STNDRDS INSTITUTE (NSI) STNDRD NSI/ESDS5.2 Elecrosaic Discharge Sensiiviy Tesing - Machine Model (MM) - (pplicaions for copies should be addressed o he merican Naional Sandards Insiue, Semiconducor Equipmen and Maerials Inernaional, 1819 L Sree, NW, 6 h floor, Washingon, DC or online a hp:// 3. REQUIREMENTS 3.1 Marking. Pars shall be permanenly and legibly marked wih he manufacurer s par number as shown in 6.3 herein and as follows:. Manufacurer s name, CGE code, or logo B. Pin 1 idenifier C. ESDS idenificaion (opional) 3.2 Uni conainer. The uni conainer shall be marked wih he manufacurer s par number and wih iems and C (if applicable) above. 3.3 Elecrical characerisics. The maximum and recommended operaing condiions and elecrical performance characerisics are as specified in 1.3, 1.4, and able I herein. 3.4 Design, consrucion, and physical dimension. The design, consrucion, and physical dimensions are as specified herein. DL LND ND MRITIME 62/10606 RE PGE 4

5 3.5 Diagrams Case ouline. The case ouline shall be as shown in and figure Terminal connecions. The erminal connecions shall be as shown in figure Funcion diagram. The funcion diagram shall be as shown in figure Device I/O schemaic. The device I/O schemaic shall be as shown in figure Device funcion able. The device funcion able shall be as shown in figure Swiching characerisic es circui and volage waveforms. The swiching characerisic es circui and volage waveforms shall be as shown in figure Enable/Disenable propagaion delay ime es circui and waveform. The Enable/Disenable propagaion delay ime es circui and waveform shall be as shown in figure Failsafe delay ime es circui and volage waveforms. The failsafe delay ime es circui and volage waveforms shall be as shown in figure Common mode ransien immuniy es circui and volage waveforms. The common mode ransien immuniy es circui and volage waveforms shall be as shown in figure 9. DL LND ND MRITIME 62/10606 RE PGE 5

6 TBLE I. Elecrical performance characerisics. 1/ Tes Symbol Tes condiions Limis Uni 2/ Min Typ Max ELECTRICL CHRCTERISTIC: 1 and 2 a 5-3/ OPERTION Supply curren Quiescen I 1 I = or 0, ll channels, no load, m 1 Mbps Quiescen I 2 EN 1 a 3, EN 2 a 3 I = or 0, ll channels, no load, m 1 Mbps EN 1 a 3, EN 2 a Elecrical characerisics Sleep mode oupu curren I OFF EN a 0, Single channel 0 µ High level oupu volage OH I OH = -4 m, See FIGURE I OH = -20 µ, See FIGURE Low level oupu volage OL I OL = 4 m, See FIGURE I OL = 20 µ, See FIGURE Inpu volage hyseresis I(HYS) 150 m High level inpu curren I IH IN from 0 o 10 µ Low level inpu curren I IL -10 Inpu capaciance o ground C I IN a, I = 0.4 sin (4E6π) 2 pf Common mode ransien immuniy CMTI I = or 0, See FIGURE k/µs SWITCHING CHRCTERISTIC: 1 and 2 a 5- OPERTION Propagaion delay PLH, PHL See FIGURE ns Pulse widh disorion PHL PLH 4/ PWD 10 Channel o channel oupu skew sk(o) 2 Oupu signal rise ime r See FIGURE 6 2 Oupu signal fall ime f 2 Propagaion delay, high level o high impedance oupu PHZ Propagaion delay, high impedance o PZH high level oupu See FIGURE Propagaion delay, low level o high impedance oupu PLZ Propagaion delay, high impedance o low level oupu PZL Fail safe oupu delay ime from inpu fs See FIGURE 8 12 µs power loss See foonoe a end of able. DL LND ND MRITIME 62/10606 RE PGE 6

7 TBLE I. Elecrical performance characerisics - Coninued. 1/ Tes Symbol Tes condiions Limis Uni 2/ Min Typ Max ELECTRICL CHRCTERISTIC: 1 a 5, 2 a 3.3-3/ OPERTION Supply curren Quiescen I 1 I = or 0, ll channels, no load, m 1 Mbps Quiescen I 2 EN 1 a 3, EN 2 a 3 I = or 0, ll channels, no load, 8 13 m 1 Mbps EN 1 a 3, EN 2 a Elecrical characerisics Sleep mode oupu curren I OFF EN a 0, Single channel 0 µ High level oupu volage OH I OH = -4 m, See FIGURE 6 (5- side) 0.8 I OH = -20 µ, See FIGURE Low level oupu volage OL I OL = 4 m, See FIGURE I OL = 20 µ, See FIGURE Inpu volage hyseresis I(HYS) 150 m High level inpu curren I IH IN from 0 o 10 µ Low level inpu curren I IL -10 Inpu capaciance o ground C I IN a, I = 0.4 sin (4E6π) 2 pf Common mode ransien immuniy CMTI I = or 0, See FIGURE k/µs SWITCHING CHRCTERISTIC: 1 a 5, 2 a 3.3- OPERTION Propagaion delay PLH, PHL See FIGURE ns Pulse widh disorion PHL PLH 4/ PWD 11 Channel o channel oupu skew sk(o) 3 Oupu signal rise ime r See FIGURE 6 2 Oupu signal fall ime f 2 Propagaion delay, high level o high impedance oupu PHZ Propagaion delay, high impedance o PZH high level oupu See FIGURE Propagaion delay, low level o high impedance oupu PLZ Propagaion delay, high impedance o low level oupu PZL Fail safe oupu delay ime from inpu fs See FIGURE 8 18 µs power loss See foonoe a end of able. DL LND ND MRITIME 62/10606 RE PGE 7

8 TBLE I. Elecrical performance characerisics - Coninued. 1/ Tes Symbol Tes condiions Limis Uni 2/ Min Typ Max ELECTRICL CHRCTERISTIC: 1 a 3.3, 2 a 5-3/ OPERTION Supply curren Quiescen I 1 I = or 0, ll channels, no load, 4 7 m 1 Mbps EN 1 a 3, EN 2 a Quiescen I 2 I = or 0, ll channels, no load, m 1 Mbps EN 1 a 3, EN 2 a Elecrical characerisics Sleep mode oupu curren I OFF EN a 0, Single channel 0 µ High level oupu volage OH I OH = -4 m, See FIGURE 6 (5- side) 0.8 I OH = -20 µ, See FIGURE Low level oupu volage OL I OL = 4 m, See FIGURE I OL = 20 µ, See FIGURE Inpu volage hyseresis I(HYS) 150 m High level inpu curren I IH IN from 0 o 10 µ Low level inpu curren I IL -10 Inpu capaciance o ground C I IN a, I = 0.4 sin (4E6π) 2 pf Common mode ransien immuniy CMTI I = or 0, See FIGURE k/µs SWITCHING CHRCTERISTIC: 1 a 3.3, 2 a 5- OPERTION Propagaion delay PLH, PHL See FIGURE ns Pulse widh disorion PHL PLH 4/ PWD 11 Channel o channel oupu skew sk(o) 2.5 Oupu signal rise ime r See FIGURE 6 2 Oupu signal fall ime f 2 Propagaion delay, high level o high impedance oupu PHZ Propagaion delay, high impedance o PZH high level oupu See FIGURE Propagaion delay, low level o high impedance oupu PLZ Propagaion delay, high impedance o low level oupu PZL Fail safe oupu delay ime from inpu fs See FIGURE 8 12 µs power loss See foonoe a end of able. DL LND ND MRITIME 62/10606 RE PGE 8

9 TBLE I. Elecrical performance characerisics - Coninued. 1/ Tes Symbol Tes condiions Limis Uni 2/ Min Typ Max ELECTRICL CHRCTERISTIC: 1 and 2 a 3.3-3/ OPERTION Supply curren Quiescen I 1 I = or 0, ll channels, no load, 4 7 m 1 Mbps EN 1 a 3, EN 2 a Quiescen I 2 I = or 0, ll channels, no load, 8 13 m 1 Mbps EN 1 a 3, EN 2 a Elecrical characerisics Sleep mode oupu curren I OFF EN a 0, Single channel 0 µ High level oupu volage OH I OH = -4 m, See FIGURE I OH = -20 µ, See FIGURE Low level oupu volage OL I OL = 4 m, See FIGURE I OL = 20 µ, See FIGURE Inpu volage hyseresis I(HYS) 150 m High level inpu curren I IH IN from 0 o 10 µ Low level inpu curren I IL -10 Inpu capaciance o ground C I IN a, I = 0.4 sin (4E6π) 2 pf Common mode ransien immuniy CMTI I = or 0, See FIGURE k/µs SWITCHING CHRCTERISTIC: 1 and 2 a 3.3- OPERTION Propagaion delay PLH, PHL See FIGURE ns Pulse widh disorion PHL PLH 4/ PWD 12 Channel o channel oupu skew sk(o) 3.5 Oupu signal rise ime r See FIGURE 6 2 Oupu signal fall ime f 2 Propagaion delay, high level o high impedance oupu PHZ Propagaion delay, high impedance o PZH high level oupu See FIGURE Propagaion delay, low level o high impedance oupu PLZ Propagaion delay, high impedance o low level oupu PZL Fail safe oupu delay ime from inpu fs See FIGURE 8 18 µs power loss 1/ Tesing and oher qualiy conrol echniques are used o he exen deemed necessary o assure produc performance over he specified emperaure range. Produc may no necessarily be esed across he full emperaure range and all parameers may no necessarily be esed. In he absence of specific parameric esing, produc performance is assured by characerizaion and/or design. 2/ Over recommended operaing condiions (unless oherwise noed). 3/ For he 5- operaion, 1 or 2 is specified from 4.5 o 5.5. For he 3- operaion, 1 or 2 is specified from 3.15 o / lso referred o as pulse skew. 5/ sk(o) is he skew beween specified oupus of a single device wih all driving inpus conneced ogeher and he oupus swiching in he same direcion while driving idenical specified loads. DL LND ND MRITIME 62/10606 RE PGE 9

10 Case X e b.010(0.25) M 16 9 E E1 PIN 1 INDEX RE 1 8 D SEE DETIL 1 c GGE PLNE.010(0.25) 0-8 L.004(0.10) SETING PLNE DETIL Dimensions Symbol Inches Millimeers Symbol Inches Millimeers Min Max Min Max Min Max Min Max E E b e.050 BSC 1.27 BSC c L D NOTES: 1. ll linear dimensions are in inches (millimeers). 2. This drawing is subjec o change wihou noice. 3. Body dimensions do no include mold flash or prorusion no o exceed.006 (0.15) 4. Falls wihin JEDEC MO-13 variaion. FIGURE 1. Case ouline. DL LND ND MRITIME 62/10606 RE PGE 10

11 Terminal number Terminal symbol Case ouline X Terminal number Terminal symbol GND1 15 GND2 3 IN 14 OUT 4 IN B 13 OUT B 5 IN C 12 OUT C 6 OUT D 11 IN D 7 EN 1 10 EN 2 8 GND1 9 GND2 FIGURE 2. Terminal connecions. GLNIC ISOLTION BRRIER DC CHNNEL + OSC + PWM ref - - FILTER PULSE WIDTH DEMODULTION + CRRIER DETECT + DT MUX C DETECT EN IN INPUT + ref - OUT FILTER - + OUTPUT BUFFER C CHNNEL FIGURE 3. Funcion diagram. DL LND ND MRITIME 62/10606 RE PGE 11

12 ENBLE INPUT OUTPUT 1 M 1 M EN 500 IN OUT 13 FIGURE 4. Device I/O schemaics. INPUT OUTPUT INPUT (IN) OUTPUT ENBLE (EN) OUTPUT (OUT) H H or Open H L H or Open L PU PU X L Z Open H or Open H PD PU X H or Open H PD PU X L Z PU = Powered Up X = Irrelevan PD = Powered Down H = High level L = Low level FIGURE 5. Device funcion able DL LND ND MRITIME 62/10606 RE PGE 12

13 INPUT GENERTOR SEE NOTE 1 I IN 50 ISOLTION BRRIER OUT O C L SEE NOTE 2 I O PLH r PHL f 1 1/2 0 OH 90% 50% 10% OL NOTES: 1. The inpu pulse is supplied by a generaor having he following characerisics: PRR 50 khz, 50% duy cycle, r 3 ns, f 3 ns, Z O = 50 Ω. 2. C L = 15 pf and includes insrumenaion and fixure capaciance wihin ±20%. FIGURE 6. Swiching characerisic es circui and volage waveforms. DL LND ND MRITIME 62/10606 RE PGE 13

14 0 IN ISOLTION BRRIER EN OUT R L =1 k ±1% O C L SEE NOTE 2 I PZL PLZ /2 0 INPUT GENERTOR SEE NOTE 1 I 50 O 50% 0.5 OL 3 IN ISOLTION BRRIER EN OUT C L SEE NOTE 2 O R L =1 k ±1% I /2 INPUT GENERTOR SEE NOTE 1 I 50 O PZH 50% PHZ 0 OH NOTES: 1. The inpu pulse is supplied by a generaor having he following characerisics: PRR 50 khz, 50% duy cycle, r 3 ns, f 3 ns, Z O = 50 Ω. 2. C L = 15 pf and includes insrumenaion and fixure capaciance wihin ±20%. FIGURE 7. Enable/Disenable propagaion delay ime es circui and waveform. DL LND ND MRITIME 62/10606 RE PGE 14

15 I 0 or 1 IN 1 ISOLTION BRRIER OUT O C L SEE NOTE 2 I O fs fs low OH 50% OL NOTES: 1. C L = 15 pf and includes insrumenaion and fixure capaciance wihin ±20%. 2. The inpu pulse is supplied by a generaor having he following characerisics: PRR 50 khz, 50% duy cycle, r 3 ns, f 3 ns, Z O = 50 Ω. FIGURE 8. Failsafe delay ime es circui and volage waveforms. 1 2 C=0.1 F ±1% C=0.1 F ±1% S1 IN ISOLTION BRRIER OUT SEE NOTE 2 PSS-FIL CRITERI: OUTPUT MUST REMIN STBLE OH or OL + GND 1 GND CM - NOTES: 1. C L = 15 pf and includes insrumenaion and fixure capaciance wihin ±20%. 2. The inpu pulse is supplied by a generaor having he following characerisics: PRR 50 khz, 50% duy cycle, r 3 ns, f 3 ns, Z O = 50 Ω. FIGURE 9. Common mode ransien immuniy es circui and volage waveforms. DL LND ND MRITIME 62/10606 RE PGE 15

16 4. ERIFICTION 4.1 Produc assurance requiremens. The manufacurer is responsible for performing all inspecion and es requiremens as indicaed in heir inernal documenaion. Such procedures should include proper handling of elecrosaic sensiive devices, classificaion, packaging, and labeling of moisure sensiive devices, as applicable. 5. PREPRTION FOR DELIERY 5.1 Packaging. Preservaion, packaging, labeling, and marking shall be in accordance wih he manufacurer s sandard commercial pracices for elecrosaic discharge sensiive devices. 6. NOTES 6.1 ESDS. Devices are elecrosaic discharge sensiive and are classified as ESDS class 1 minimum. 6.2 Configuraion conrol. The daa conained herein is based on he salien characerisics of he device manufacurer s daa book. The device manufacurer reserves he righ o make changes wihou noice. This drawing will be modified as changes are provided. 6.3 Suggesed source(s) of supply. Idenificaion of he suggesed source(s) of supply herein is no o be consrued as a guaranee of presen or coninued availabiliy as a source of supply for he iem. DL Land and Mariime mainains an online daabase of all curren sources of supply a hp:// endor iem drawing adminisraive conrol number 1/ Device manufacurer CGE code endor par number Top side Marking 62/ XE ISO7241MDWREP ISO7241M 1/ The vendor iem drawing esablishes an adminisraive conrol number for idenifying he iem on he engineering documenaion. CGE code Source of supply Texas Insrumens, Inc. Semiconducor Group 8505 Fores Lane P.O. Box Dallas, TX Poin of conac: U.S. Highway 75 Souh P.O. Box 84, M/S 853 Sherman, TX DL LND ND MRITIME 62/10606 RE PGE 16

TITLE MICROCIRCUIT, DIGITAL, 9 CHANNEL RS- 422/ RS-485 TRANSCEIVER, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DATE APPROVED

TITLE MICROCIRCUIT, DIGITAL, 9 CHANNEL RS- 422/ RS-485 TRANSCEIVER, MONOLITHIC SILICON REVISIONS LTR DESCRIPTION DATE APPROVED REISIONS LTR DESCRIPTION DTE PPROED Correc vendor par in secion 6.3. - phn 12-06-04 Thomas M. Hess B Updae boilerplae o curren MIL-PRF-38535 requiremens. - PHN 18-04-16 Thomas M. Hess Prepared in accordance