Selection Guide. Diode by Circuit Types
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1 Selection Guide Diode by Circuit Types To place orders or request samples, please contact distributor Profusion plc: The all contents in this document are as of date of publication. Make sure thatthis is the latest revision of the document before use. Please check the details of the product by data sheet. P.1
2 Diodes by Circuit Types Diodes are used in peripheral circuit of power supply. A part of diode lineup is shown below. Please refer to Sanken s catalog or website for more information. Non-isolated Buck/Buck-boost Circuit Low power application For motor control Auxiliary power supply LED lighting, etc. Fly-back Circuit Power Supply Application Diode Application page Low to middle power application Adapter Auxiliary power supply LED lighting, etc. LLC Circuit High power application OA, AV Industrial equipment LED street light, etc. Power Factor Correction (PFC) Application for 75W or more Industrial equipment LED lighting, etc. VAC VAC VAC VAC AC/DC Convertor REG AC/DC Convertor GND Bootstrap Diode VS PFC Control IC AC/DC Convertor AC/DC Convertor VOUT Secondary Rectification Diode Snubber Diode Secondary Rectification Diode Bypass Diode Rectification Diode VOUT VOUT VOUT GND VPFCOUT Freewheel Diode (FRD) P.3 Snubber Diode (SARS) P.6 Secondary Rectification Diode SBD : VRM = 40 V ~ 150V FRD : VRM = 200 V ~ 600 V P.8 Bootstrap Diode (FRD) P.14 For PFC Bypass Diode (Acceptable large current ) Rectification Diode (FRD) P.15 P.2
3 Freewheel Diode For Non-isolated Buck and Buck-boost Circuit Since buck and buck-boost offline converter IC operates by high frequency, recovery characteristic of freewheel diode needs to be fast. In order for high circuit efficiency, it is recommended to select VF of the diode as low as possible. The fast recovery diodes with low VF for freewheeling are as follows; Buck circuit Buck-boost circuit AC/DC Convertor AC/DC Convertor VAC VAC VOUT VOUT Freewheel Diode Package I F V RM Features Link SMD Type (SJP) 1A to 3A 200 to 600V Fast recovery trr 50ns P.4 Through-hole Type (Axial, TO220) 1A to 10A 500 to 600V Fast recovery trr 50ns P.5 P.3
4 Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit Fast Recovery Diode (SMD Type) Fast Recovery, trr 50ns V RM = 200V~600V I F = 1A~3A Package SJP X / Y / Z = 4.5 : 2.6 : 2.15 Unit : mm V RM I F (AVG) Products Package I FSM 50Hz Half wave trr (max) I F I F :I R =1:1 1.0A SJPL-D2 25A 0.98V 1.0A 50ns 200V 2.0A SJPL-H2 SJP 25A 0.98V 2.0A 50ns 3.0A SJPL-L2 60A 0.98V 3.0A 50ns 400V 1.5A SJPL-F4 25A 1.3V 1.5A 50ns SJP 3.0A SJPL-L4 30A 1.3V 3.0A 50ns 500V 1.0A SJPD-D5 20A 1.4V 1.0A 40ns SJP 3.0A SJPD-L5 50A 1.4V 3.0A 50ns 600V 2.0A SJPL-H6 SJP 30A 1.5V 2.0A 50ns P.4
5 Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit Fast Recovery Diode (Through-hole Type) Fast Recovery, trr 50ns V RM = 200V~600V Package Axial φ2.4 φ2.7 φ4.0 φ6.5 TO220F-2L TO220F-3L (Center tap) IF = 1A~10A I FSM trr V RM I F (AVG) Products Package 50Hz Half wave (max) I F I F :I R =1:1 1.0A AL01Z Axial (φ2.4) 25A 0.98V 1.0A 50ns 200V 2.0A RL10Z Axial (φ4.0) 30A 0.98V 2.0A 50ns 3.5A RL4Z Axial (φ6.5) 80A 0.95V 3.5A 50ns 1.0A AL01 Axial(φ2.4) 20A 1.3V 1.0A 50ns 1.5A EL1 Axial(φ2.7) 40A 1.3V 1.5A 50ns 400V 2.0A RL2 Axial (φ4.0) 40A 1.3V 2.0A 50ns 5.0A FML-G14S TO-220F-2L 70A 1.3V 5.0A 50ns 10A FML-24S TO-220F-3L 70A 1.3V 5.0A 50ns FMXA-1104S TO-220F-2L 100A 1.5V 10A 25ns 1.2A RD2A Axial (φ4.0) 30A 1.55V 1.2A 50ns 3.0A RL4A Axial (φ6.5) 80A 1.5V 3.0A 50ns 600V 5.0A FML-S16S TO-220F-2L 50A 1.7V 5.0A 50ns 10A FMD-G26S 1.7V 10A 50ns TO-220F-2L 100A FMXA-1106S 1.98V 10A 28ns P.5
6 SARS, Diode for Snubber Circuit Using FLR Diode Using SARS VAC Snubber VAC Snubber Discharge Loop Discharge Loop Serge Absorb Loop SARS Serge Absorb Loop Power Supply Control IC Power Supply Control IC Controller V DS Controller V DS When MOSFET turns off, serge current flows on Surge Absorb loop and It is absorbed by capacitor. The electrical charge of capacitor is discharged through Discharge loop. The power is not transferred to the secondary side. Thus it becomes power dissipation. When this capacitor is discharged, the recovery current of the diode flows on the MOSFET. FLR (Fast Recovery Diode) is beneficial for preventing the MOSFET damage. When SARS is used, the electrical charge of the capacitor is discharged through Discharge loop in recovery period of SARS and this power is transferred to the secondary side. Thus high circuit efficiency can be achieved. When this capacitor is discharged, the instantaneous recovery current of the diode flows on the MOSFET. It is recommended to add a resistor in series with SARS for the damage control of MOSFET. (Patented circuit) P.6
7 Low Noise, Improve Circuit Efficiency SARS, Diode for Snubber Circuit Package SJP TO-220F-2L Axial-φ2.7mm/φ0.60mm X / Y / Z = 4.5 : 2.6 : 2.15 Unit : mm Axial-φ4.0mm/φ0.78mm Low noise; Prevention of ringing at Power MOSFET turn-off PCB area saving; Reducing number of filter circuit components Improve circuit efficiency Type Part Number V RM I F (AVG) I FSM 50Hz Halfwave (max) I F trr I F :I R =1:1 Package SARS V 1.2 A 110 A 0.92 V 1.2 A 2 to18 μs Axial-φ2.7/φ0.60 External resistance Built-in resistance(22ω) SARS V 1.5 A 100 A 0.92 V 1.5 A 2 to18 μs Axial-φ4.0/φ0.78 SARS V 1 A 30 A 1.05 V 1 A 2 to 18 μs SJP(SMA: ) SARS V 0.3 A 1.5 A 13 V 0.5 A 1 to 9 μs TO220F-2L P.7
8 Diode for Secondary Rectification The secondary rectification diode have forward current flow for charging Secondary electrolytic capacitor and recovery current flow. In order for high circuit efficiency, it is recommended to select the diode with low VF and fast recovery characteristics. Flyback Type VAC AC/DC convertor IC Secondary Rectification Diode VOUT Half bridge Type DC input VB REG LLC control IC VS Secondary Rectification Diode VOUT Cont. GND GND V RM Diode I F(AVG) trr Link 40 V, 60 V Schottky 10 ~ 30A 0.7 V - P.9 80 ~ 150 V Schottky 10 ~ 30A 0.92 V - P V, 300 ast Recovery 10 ~ 20A 1.3V 17 ~ 40ns P V, 600ast Recovery 10 ~ 20A 1.98V 25 ~ 50ns P V SiC Schottky 10 ~ 20A 1.75 V - P.13 P.8
9 Secondary Rectification Diode Schottky Diode, V RM 40V Low 0.7 V V RM = 40 V ~ 60 V TO-220F-3L TO-3PF-3L V RM I F (AVG) Package Part Number I FSM 50Hz Half wave (max) I F 5 A x 2 FMW-24L 100 A 0.55 V 5 A 40 V 7.5 A x 2 TO-220F-3L FMW-24H 120A 0.55V 7.5A 10 A x 2 FMW A 0.55 V 10 A 15 A x 2 TO-3PF-3L FMW A 0.55V 15A 5 A x 2 FMW A 0.70 V 5 A 60 V 7.5 A x 2 TO-220F-3L FMW A 0.70 V 7.5 A 10 A x 2 FMW A 0.70 V 10 A 15 A x 2 TO-3PF-3L FMW A 0.70V 15A P.9
10 Secondary Rectification Diode Schottky Diode, V RM 80V Low 0.92 V V RM = 80 V ~ 150 V TO-220F-3L TO-3PF-3L V RM I F (AVG) Package Part Number 80 V I FSM 50Hz Half wave (max) 10 A x 2 FMEN A 0.76 V 10 A TO-220F-3L 15 A x 2 FMEN A V 15 A 90 V 5 A x 2 TO-220F-3L FMW A 0.90 V 5.0 A 100 V 150 V 5 A x 2 FMEN-210A 100 A 0.85 V 5.0 A 7.5 A x 2 FMEN-215A 100 A 0.85 V 7.5 A TO-220F-3L 10 A x 2 FMEN-220A 120 A 0.85 V 10 A 15 A x 2 FMEN-230A 150 A 0.85 V 15 A 15 A x 2 TO-3PF-3L FMEN-430A 150 A 0.85 V 15 A 5 A x 2 FMEN-210B 100 A 0.92 V 5.0A 10 A x 2 TO-220F-3L FMEN-220B 120 A 0.92 V 10 A 15 A x 2 FMEN-230B 150 A 0.92 V 15 A I F P.10
11 Secondary Rectification Diode Fast Recovery Diode, trr 40ns V RM 200V Fast Recovery, trr = 17 ~ 40ns Low 1.3V V RM = 200 V ~ 300 V TO-220F-2L TO-220F-3L TO-3PF-3L V RM I F (AVG) Package Part Number 200 V 300 V 10 A TO-220F-2L 5 A x 2 I FSM (A) 50Hz Half wave (max) I F trr I F :I R =1:1 FMX-G22S V 10 A 30 ns FML-G22S V 10 A 40 ns FMX-12SL V 5 A 30 ns 5 A x 2 FMXA-2102ST V 5 A 25 ns TO-220F-3L 7.5 A x 2 FMX-22SL V 7.5 A 30 ns 10 A x 2 FMXA-2202S V 10 A 25 ns 10 A x 2 TO-3PF-3L FMXS-4202S V 10 A 30 ns 5 A x 2 FMX-23S V 5 A 30 ns 7.5 A x 2 TO-220F-3L FMXA-2153S V 7.5 A 17 ns 10 A x 2 FMXA-2203S V 10 A 25 ns 10 A x 2 TO-3PF-3L FMXA-4203S V 10 A 25 ns P.11
12 Secondary Rectification Diode Fast Recovery Diode, trr 50ns V RM 400V Fast Recovery, trr = 25 ~ 50ns Low 1.98V V RM = 400 V ~ 600 V TO-220F-2L TO-220F-3L TO-3PF-3L V RM I F (AVG) Package Part Number 400 V 600 V I FSM (A) 50Hz Half wave (max) I F trr I F :I R =1:1 10 A TO-220F-2L FMXA-1104S V 10 A 25 ns 10 A x 2 TO-220F-3L FML-24S V 5 A 50 ns 10 A TO-220F-2L FMD-G26S V 10 A 50 ns FMX-1106S V 10 A 30 ns FMXA-1106S V 10 A 28 ns FMXK-1106S V 10 A 27 ns 20A FMXS-1206S V 20A 35ns 10 A x 2 TO-220F-3L FMXS-2206S V 10 A 30 ns FMXK-2206S V 10 A 27 ns 10 A x 2 TO-3PF-3L FMD-4206S V 10 A 50 ns P.12
13 Secondary Rectification Diode SiC Schottky Diode, V RM = 650V High voltage Schottky Diode Low 1.75 V V RM = 650 V TO-220F-2L TO-220F-3L V RM I F (AVG) Package Part Number 650 V I FSM (A) 50Hz Half wave (max) I F trr I F :I R =1:1 10 A TO-220F-2L FMCA A 1.75 V 10 A - 10 A x 2 TO-220F-3L FMCA A 1.75 V 10 A - P.13
14 Bootstrap Diode Bootstrap Diode is used for high-side driver of power supply circuit. Since the recovery current flows on the diode depending on the switching frequency of the driver, it is recommended to use a diode with fast recovery characteristic. For the bootstrap diode selection, the applied voltage of Power MOSFET and the high-side sink current need to be considered. DC input Bootstrap Diode REG VB LLC control IC VS VOUT SJP X / Y / Z = 4.5 : 2.6 : 2.15(mm) X Axial Φ2.4mm /φ0.6mm Axial Φ2.7mm /φ0.78mm Axial Φ4.0mm /φ0.78mm Axial Φ4.0mm /φ0.98mm Y GND Z V RM I F (AV) パッケージ Part Number I FSM 50Hz Half wave (max.) (I F =I F (AV) ) trr I F :I R =1:1 2.0 A SJP SJPL-H6 30 A 1.5 V 50 ns 2.0 A SJP SJPX-H6 20 A 1.5 V 30 ns 600 V 0.5 A Axial φ2.4/φ0.6 AG01A 15 A 1.8 V 100 ns 0.6 A Axial φ2.7/φ0.78 EG1A 10 A 2.0 V 100 ns 1.0 A Axial φ4.0/φ0.78 RG10A 50 A 2.0 V 100 ns 1.2 A Axial φ4.0/φ0.98 RD2A 30 A 1.55 V 50 ns 800 V 0.5 A Axial φ2.4/φ0.6 AB01B 10 A 2.0 V 200 ns P.14
15 Diode for PFC PFC circuit consists of a Bypass Diode and a Rectification Diode. Each diode needs to be selected according to their use. Points of selection for Bypass Diode P.16 Points of selection for Rectification Diode P.17 VAC Bypass Diode Rectification Diode V PFCOUT PFC Control IC GND Operation Mode Features Link Bypass Diode High Power, I FSM > 50A Low 0.95V P.18 Rectification Diode DCM CRM CCM Low 1.3V P.19 Fast recovery diode, trr 50ns SiC Schottky Diode P.20 P.21 P.15
16 Points of Selection for Bypass Diode 1. Functions of Bypass Diode For Protecting MOSFET and Rectification Diode from Inrush Current When the inductance is saturated by the inrush current, large current flows to the rectification diode, the diode has a risk of breakdown. Since saturation of inductance is prevented by flowing inrush current to the bypass diode, MOSFET and rectification diode are protected. For protecting Bridge Diode from Lightning Surge If the lightning surge is injected to the circuit, bridge diode has a risk of breakdown. Thus, the bypass diode changes the energy of the lightning surge flow and it is absorbed by electrolytic capacitor. 2. Electrical Characteristics of Bypass Diode VAC PFC Control IC Bypass Diode Rectification Diode In order to change flow of the inrush current and the lightning surge to the bypass diode, VF of Bypass diode needs to be lower than VF of rectification diode. When output voltage becomes higher than input voltage, the bypass diode turns off. Thus recovery characteristic of the diode is not considered. The pulse current and VF characteristic needs to be considered for the diode selection. V PFCOUT GND Key points of Bypass Diode selection; 1) Acceptable large current in short period (I FSM > 50A) 2) Low VF than rectification diode ( 0.95V) P.16
17 Point of Selection for Rectification Diode The Rectification Diode of PFC should be selected according to the operation mode of PFC Features Advantages Disadvanta ges Discontinuous Conduction Mode (DCM) There is a period when the current that runs through L becomes zero (Frequency is fixed) Critical Conduction Mode (CRM) The current that runs through L becomes zero for an instant (ON time is fixed) L value: Medium L value: Large L value: Small I L I L I L MOSFET turns ON when the current that runs through a diode becomes zero There is almost no recovery current in the rectifier diode Switching noise is small With almost no recovery current, better efficiency is achieved when focusing on VF Peak current of MOSFET is large Ripple of input current is large Normal mode noise is large Key points in selecting a rectifier diode ; DCM, CRM: Low VF Diode ( 1.3V) CCM: Fast Recovery Diode (trr 50 ns) with Low VF Continuous Conduction Mode (CCM) The current that runs through L does not become zero (Frequency is fixed) Peak current of MOSFET is small Ripple of input current is small Normal mode noise is small MOSFET turns ON when the current runs through the diode Recovery current runs through the rectifier diode, resulting in large loss Switching noise is large To reduce loss, use a diode with excellent reverse recovery time (trr) P.17
18 Bypass Diode for PFC 0.95 V, V RM = 600 V Low = 0.95V(max.) V RM = 600V Axial-φ2.7mm/φ0.78mm φ4.0mm/φ0.78mm φ6.5mm/φ1.4mm V RM I F (AVG) Package Part Number I FSM 10ms Half wave (max.) I F IR /H.I R (V R =V RM ) 1.0 A Axial φ2.7 EM2A 80 A A 10 μa / 50 μa 1.2 A Axial φ4.0 RM 11A 100 A A 10 μa / 50 μa 600 V 1.2 A Axial φ4.0 RM 10A 150 A A 10 μa / 50 μa 1.7 A Axial φ6.5 RM 4A 200 A A 10 μa / 50 μa 1.8 A Axial φ6.5 RM 4AM 350 A A 10 μa / 50 μa P.18
19 Rectification Diode for DCM and CRM PFC 1.3 V, V RM = 600 V For DCM and CRM Low = 1.30V(max.) V RM = 600V trr 200ns UD : Under Development Axial φ6.5 TO-220F-2L TO-220F-3L TO-3PF-2L TO-3PF-3L TO-3P-3L TO-247-3L V RM I F (AVG) Package 600 V 3.0 A Part Number (Max.) IF I FSM 50Hz Half wave trr I F :I R =1:1 Axial (φ6.5/φ1.4) RY2A 1.15 V 3.0 A 50 A 200 ns Axial (φ6.5/φ1.4) RN4A 1.30 V 3.0 A 50 A 100 ns 5.0 A TO-220F-2L FMN-1056S 1.30 V 5.0 A 60 A 100 ns 10 A TO-220F-2L FMNS-1106S 1.30 V 10 A 100 A 100 ns 15A TO-220F-2L FMN-1156S 1.30 V 15 A 150 A 100 ns 20 A TO-220F-2L FMN-1206S 1.30 V 20 A 150 A 150 ns 30 A TO-3PF-2L FMN-3306S 1.30 V 30 A 150 A 200 ns 10 A x 2 TO-220F-3L FMN-2206S 1.30 V 10 A 150 A 100 ns 15 A x 2 30 A x 2 TO-3PF-3L FMN-4306S 1.30 V 15 A 150 A 150 ns TO-3P-3L CTNS-4306S 1.30 V 15 A 150 A 100 ns UD TO-247-3L CTNS-6306S UD 1.30 V 15 A 150 A 100 ns TO-3P-3L CTNS-4606S 1.30 V 30 A 150 A 150 ns TO-247-3L CTNS-6606S 1.30 V 30 A 150 A 150 ns UD P.19
20 Rectification Diode for CCM PFC, Fast Recovery Diode trr 50 ns, V RM = 600 V For CCM Fast Recovery Diode trr = 50 ns (max.) V RM = 600V I F = 1.2 A to 20 A Axial φ4.0 Axial φ6.5 TO-220F-2L V RM I F (AVG) Package Part Number (Max.) I F I FSM 50Hz Half wave trr I F :I R =1:1 1.2 A Axial (φ4.0/φ0.78) RD2A 1.55 V 1.2 A 30 A 50 ns 3.0 A Axial (φ6.5/φ1.4) RL4A 1.5 V 3.0 A 80 A 50 ns 5.0 A TO-220F-2L FMX-G16S 1.5 V 5 A 50 A 30 ns 600 V 8.0 A TO-220F-2L FMXK-1086S 1.75 V 8 A 100 A 27 ns 10 A TO-220F-2L FMXA-1106S 1.98 V 10 A 100 A 28 ns FMX-1106S 1.60 V 10 A 100 A 30 ns 20 A TO-220F-2L FMXS-1206S 1.60 V 20 A 100 A 35 ns P.20
21 Rectification Diode for CCM PFC, Fast Recovery and SiC Schottky Diode trr 50 ns, V RM = 600 V /650 V Fast recovery trr 50 ns V RM = 600V, I F = 20 A to 60 A SiC Schottky V RM = 650V, I F = 10 A to 20 A TO-220F-2L TO-220F-3L TO-3PF-3L TO-3P-3L TO-247-3L UD : Under Development V RM I F (AVG) Package 600 V 650 V 10 A x 2 15 A x 2 30 A x 2 TO-220F-3L TO-3PF-3L Part Number (Max.) IF I FSM 50Hz Half wave trr I F :I R =1:1 FMXK-2206S 1.75 V 10 A 100 A 27 ns FMXS-2206S 1.60 V 10 A 100 A 30 ns FMXA-4206S 1.98 V 10 A 100 A 28 ns UD FMX-4206S UD 1.50 V 10 A 100 A 30 ns FMD-4206S 1.70 V 10 A 100 A 50 ns TO-3P-3L CTXS-4306S UD 1.70 V 15 A 150 A 30 ns TO-247-3L CTXS-6306S UD 1.70 V 15 A 100 A 30 ns TO-3P-3L CTXS-4606S 1.70 V 30 A 150 A 35 ns TO-247-3L CTXS-6606S UD 1.70 V 30 A 150 A 35 ns 10 A TO-220F-2L FMCA V 10A 40 A SiC Schottky 10 A x 2 TO-220F-3L FMCA V 10A 40 A SiC Schottky P.21
22 IMPORTANT NOTES The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. Application examples, operation examples and recommended examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of Sanken or any third party which may result from its use. Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this document. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Anti radioactive ray design is not considered for the products listed herein. Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken s distribution network. The contents in this document must not be transcribed or copied without Sanken s written consent. P.22
23 DISTRIBUTOR Southend-on-Sea Essex SS2 6UN United Kingdom +44 (0)
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