P-Channel 30 V (D-S) MOSFET with Schottky Diode

Transcription

1 P-Channel 3 (D-S) MOSFET with Schottky Diode SiA87EDJ PRODUCT SUMMARY DS () R DS(on) ( ) Max. I D (A) at GS = a.8 at GS = a.9 at GS = a.5 at GS = SCHOTTY PRODUCT SUMMARY A () f () Diode Forward oltage Q g (Typ.). nc I F (A) a 3.5 at A PowerPA SC-7- Dual G 5.5 mm A S NC D 3 D.5 mm.75 mm Ordering Information: SiA87EDJ-T-GE3 (Lead (Pb)-free and Halogen-free) FEATURES LITTLE FOOT Plus Schottky Power MOSFET Thermally Enhanced PowerPA SC-7 Package - Small Footprint Area - Low On-Resistance - Thin.75 mm Profile Typical ESD Protection (MOSFET): 5 (HBM) % R g Tested Material categorization: For definitions of compliance please see /doc?999 APPLICATIONS Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Battery Charger Switch - Buck Converter - Power Management Part # code Marking Code H E X X X X G Lot Traceability and Date code S D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) -.5 Parameter Symbol Limit Unit Drain-Source oltage (MOSFET) DS - 3 Reverse oltage (Schottky) A 3 Gate-Source oltage (MOSFET) GS ± T C = 5 C a Continuous Drain Current (T J = 5 C) (MOSFET) T C = 7 C -.5 a I T D A = 5 C -. b, c T A = 7 C - 3. b, c Pulsed Drain Current (MOSFET) (t = 3 µs) I DM - 5 A Continuous Source-Drain Diode Current T C = 5 C -.5 a I (MOSFET Diode Conduction) T S A = 5 C -. b, c Average Forward Current (Schottky) I F b Pulsed Forward Current (Schottky) I FM 3 T C = 5 C.5 Maximum Power Dissipation (MOSFET) T C = 7 C 5 T A = 5 C.9 b, c T A = 7 C. P D T C = 5 C.8 W Maximum Power Dissipation (Schottky) T C = 7 C.3 T A = 5 C. b, c T A = 7 C b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) d, e C Document Number: 8 S3-9-Rev. A, 8-Jan-3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

2 SiA87EDJ THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET) b, f t 5 s R thja 5 5 Maximum Junction-to-Case (Drain) (MOSFET) Steady State R thjc.5 C/W Maximum Junction-to-Ambient (Schottky) b, f t 5 s R thja 7 Maximum Junction-to-Case (Drain) (Schottky) Steady State R thjc Notes: a. Package limited. b. Surface mounted on " x " FR board. c. t = s. d. See solder profile (/doc?7357). The PowerPA SC-7 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is C/W. SPECIFICATIONS (T J = 5 C, unless otherwise noted) Recovery Time Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown oltage DS GS =, I D = - 5 µa - 3 DS Temperature Coefficient DS /T J - 3 I D = - 5 µa GS(th) Temperature Coefficient GS(th) /T J.7 m/ C Gate-Source Threshold oltage GS(th) DS = GS, I D = - 5 µa Gate-Source Leakage I DS =, GS = ±.5 ±.5 GSS DS =, GS = ± ± Zero Gate oltage Drain Current I DS = - 3, GS = - DSS DS = - 3, GS =, T J = 55 C - µa On-State Drain Current a I D(on) DS 5, GS = A GS = -, I D = - 3 A.5.5 Drain-Source On-State Resistance a R DS(on) GS = -.5, I D = - A.5.8 GS = - 3.7, I D = - A.7.9 GS = -.5, I D = - A.95.5 Forward Transconductance a g fs DS = -, I D = - 3 A 9 S Dynamic b Input Capacitance C iss Output Capacitance C oss DS = - 5, GS =, f = MHz 55 pf Reverse Transfer Capacitance C rss 5 Total Gate Charge Q DS = - 5, GS = -, I D = -. A 3 g. nc Gate-Source Charge Q gs DS = - 5, GS = -.5, I D = -. A.3 Gate-Drain Charge Q gd Gate Resistance R g f = MHz. 5.5 Turn-On Delay Time t d(on) Rise Time t r DD = - 5, R L =. Turn-Off DelayTime t d(off) I D - 3. A, GEN = -.5, R g = 3 5 Fall Time t f Turn-On Delay Time t d(on) ns Rise Time t r DD = - 5, R L =. Turn-Off DelayTime t d(off) I D - 3. A, GEN = -, R g = 5 5 Fall Time t f 7 5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 5 C -.5 Pulse Diode Forward Current I SM - 5 A Body Diode oltage SD I S = - 3. A, GS = Body Diode Reverse t rr 3 ns Body Diode Reverse Recovery Charge Q rr 8 5 nc IF = - 3. A, di/dt = A/µs, TJ = 5 C Reverse Recovery Fall Time t a 9 ns Reverse Recovery Rise Time t b 7 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Document Number: 8 S3-9-Rev. A, 8-Jan-3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

3 SiA87EDJ SCHOTTY SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit I F =.5 A.37.5 Forward oltage Drop F I F =.5 A, T J = 5 C.3.37 I F = A..5 I F = A, T J = 5 C..5 Maximum Reverse Leakage Current I r = 3.5. rm r = 3, T J = 85 C. ma Junction Capacitance C T r = 5 35 pf Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) I GSS - Gate Current (ma)..8. T J = 5 C I GSS - Gate Current (A) T J = 5 C T J = 5 C GS - Gate-Source oltage () Gate-Source oltage vs. Gate Current GS - Gate-to-Source oltage () Gate-Source oltage vs. Gate Current 5 GS = thru GS = 3 5 I D - Drain Current (A) 9 3 GS = I D - Drain Current (A) 3 T C = 5 C T C = 5 C DS - Drain-to-Source oltage () Output Characteristics T C = - 55 C GS - Gate-to-Source oltage () Transfer Characteristics Document Number: 8 S3-9-Rev. A, 8-Jan-3 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

4 SiA87EDJ MOSFET TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted).5.8 R DS(on) - On-Resistance (Ω) GS =.5 GS = 3.7 GS =.5 GS = R DS(on) - On-Resistance (Normalized) I D = 3 A GS =,.5, 3.7 GS = I D - Drain Current (A) On-Resistance vs. Drain Current and Gate oltage T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 8 C iss C - Capacitance (pf) I S - Source Current (A) T J = 5 C T J = 5 C C oss C rss DS - Drain-to-Source oltage () Capacitance SD - Source-to-Drain oltage () Soure-Drain Diode Forward oltage 8.5 GS - Gate-to-Source oltage () DS = 5 I D =. A DS = 7.5 DS = R DS(on) - On-Resistance (Ω) T J = 5 C I D = 3 A T J = 5 C Q g - Total Gate Charge (nc) Gate Charge. 8 GS - Gate-to-Source oltage () On-Resistance vs. Gate-to-Source oltage Document Number: 8 S3-9-Rev. A, 8-Jan-3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

5 SiA87EDJ MOSFET TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) GS(th) ().8 I D = 5 μa Power (W) T J - Temperature ( C)... Pulse (s) Threshold oltage Single Pulse Power, Junction-to-Ambient Limited by R DS(on) * I D - Drain Current (A). T A = 5 C BDSS Limited µs ms ms ms s s DC.. DS - Drain-to-Source oltage () * GS > minimum GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 8 I D - Drain Current (A) 8 Package Limited Power Dissipation (W) T C - Case Temperature ( C) T C - Case Temperature ( C) Current Derating* Power Derating * The power dissipation P D is based on T J(max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 8 S3-9-Rev. A, 8-Jan-3 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

6 SiA87EDJ MOSFET TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) Duty Cycle =.5 Normalized Ef fective T ransient Thermal Impedance.. Notes:..5. P DM t t t. Duty Cycle, D = t. Per Unit Base = R th JA = C/W Single Pulse 3. T JM - T A = P DM Z (t) th JA. Surface Mounted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Ef fective T ransient Thermal Impedance Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 8 S3-9-Rev. A, 8-Jan-3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

7 SiA87EDJ SCHOTTY TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) I R - Reverse Current (ma) R = 3 R = - Forward Current (A) I F T J = 5 C T J = 5 C T J - Junction Temperature ( C) F - Forward oltage Drop () Reverse Current vs. Junction Temperature Forward oltage Drop 5 - Junction Capacitance (pf) C T DS - Drain-to-Source oltage () Capacitance Document Number: 8 S3-9-Rev. A, 8-Jan-3 7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

8 SiA87EDJ SCHOTTY TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance t.. Notes:..5 P DM. Single Pulse t t. Duty Cycle, D = t. Per Unit Base = R thja = 85 C/W 3. T JM - T A = P DM Z (t) thja.. Surface Mounted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle =.5 Normalized Effective Transient Thermal Impedance...5 Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?8. Document Number: 8 S3-9-Rev. A, 8-Jan-3 8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

9 Package Information PowerPA SC7-L e b e b PIN PIN PIN3 PIN PIN PIN3 E E PIN PIN5 PIN PIN PIN5 PIN 3 BACSIDE IEW OF SINGLE D A BACSIDE IEW OF DUAL Notes:. All dimensions are in millimeters. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A E L L D E D D D E E3 z Z DETAIL Z SINGLE PAD DUAL PAD DIM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A A b C D D D E E E E e.5 BSC. BSC.5 BSC. BSC.75 TYP. TYP.75 TYP. TYP. TYP. TYP.3 TYP.3 TYP. TYP.9 TYP.5 TYP. TYP 3.5 TYP.9 TYP.355 TYP. TYP L T ECN: C-73 Rev. C, -Aug-7 DWG: 593 Document Number: 73 -Aug-7

10 Application Note 8 RECOMMENDED PAD LAYOUT FOR PowerPA SC7-L Dual.5 (.98).3 (.).35 (.).35 (.3).75 (.).3 (.).5 (.98).95 (.37).75 (.9). (.).75 (.).5 (.). (.3) Dimensions in mm (inches) APPLICATION NOTE Return to Index Document Number: 787 Revision: 8-Oct-3

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