2.1GHz. 2.1GHz 300nA RMS SFP OPTICAL RECEIVER IN+ MAX3748A IN- RSSI DISABLE LOS DS1858/DS1859 SFP. Maxim Integrated Products 1

Transcription

1 ; Rev 1; 8/03 RSSI (BW) 0.85pF 330nA 2mA P-P 2.7Gbps 2.1GHz +3.3V 93mW / 30-mil x 50-mil 580Ω TO-46 TO-56 MAX3748A Maxim RSSI MAX3748A DS1858/DS1859 SFP SFF Gbps SFF/SFP (SFP) * 2.7Gbps (NRZ) 4 TO46 RSSI () < 100µA P-P 10ps 2.1GHz 300nA RMS +3.3V 2GHz 2.0mA P-P 30mils x 50mils 28mA PART TEMP RANGE PIN-PACKAGE E/D -40 C to +85 C Dice** E/D -40 C to +85 C Dice** **Dice are guaranteed to operate from -40 C to +85 C, but are tested only at T A = +25 C. SFP OPTICAL RECEIVER 400pF 400pF FILTER IN+ 0.1µF HOST BOARD 4-PIN TO CAN 3.3kΩ MAX3748A RSSI DISABLE LOS IN GND IN- 0.1µF = 3.3V 4.7kΩ TO 10kΩ DS1858/ DS1859 MOD-DEF1 MOD-DEF2 Maxim Integrated Products 1 Maxim Maxim Maxim Maxim

2 ABSOLUTE MAXIMUM RATINGS Power-Supply Voltage ( ) V to +6.0V Continuous CML Output Current (, ) mA to +25mA Continuous Input Current (IN)...-4mA to +4mA Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Continuous Input Current (FILTER)...-8mA to +8mA Operating Junction Temperature Range (T J ) C to +150 C Storage Ambient Temperature Range (T STG ) C to +150 C Die Attach Temperature C ( = +2.97V to +3.63V and T A = -40 C to +85 C. Typical values are at = +3.3V, source capacitance (C IN) = 0.85pF, and T A = +25 C, unless otherwise noted.) (Notes 1, 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Current I CC Including CML output current (I IN = 0) ma Input Bias Voltage 1.0 V Input Overload (Note 3) 2 ma P-P Input-Referred Noise I N C IN = 0.85pF, BW = 933MHz 206 C IN = 0.85pF, BW = 2.1GHz C IN = 0.85pF, BW = 18GHz 620 C IN = 0.85pF, BW = 933MHz 206 C IN = 0.6pF, BW = 2.1GHz C IN = 0.6pF, BW = 18GHz 550 Differential Transimpedance Differential output, I IN = 40µA AVE kω Small-Signal Bandwidth (Note 3) BW -3dB, C IN = 0.6pF dB, C IN = 0.85pF Low-Frequency Cutoff -3dB, input current = 20µA AVE (Note 3) 30 khz Deterministic Jitter (Notes 3, 5) DJ 100µA P-P < input 2.1Gbps, K28.5 pattern mA P-P 2.7Gbps, pattern 24 10µA P-P < input 2.1Gbps, K28.5 pattern µA P-P 2.7Gbps, pattern 20 Filter Resistance Ω Differential Output Resistance (, ) na RMS GHz ps P-P Ω Maximum Differential Output Voltage V OD Input > 50µA AVE, output termination to (output in limited state) mv P-P 2

3 ELECTRICAL CHARACTERISTICS (continued) ( = +2.97V to +3.63V and T A = -40 C to +85 C. Typical values are at = +3.3V, source capacitance (C IN) = 0.85pF, and T A = +25 C, unless otherwise noted.) (Notes 1, 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Single-Ended Output Common- Mode Minimum Level () Output Data Transition Time Differential Output Return Loss Power-Supply Noise Rejection Note 1: Die parameters are production tested at room temperature only, but are guaranteed by design and characterization from -40 C to +85 C. Note 2: Source capacitance represents the total capacitance at the IN pad during characterization of the noise and bandwidth parameters. Note 3: Guaranteed by design and characterization. Note 4: Input-referred noise is: RMS output noise Gain at f = 100MHz PSNR Relative to, I IN = 1mA AVE mv Input > 200µA P-P 20% to 80% rise/fall time (Note 3) Frequency 1GHz 17 1GHz < frequency 2GHz 10 I IN = 0 f < 1MHz 46 (Note 6) 1MHz f < 10MHz ps RSSI Gain () A RSSI (Note 7) 21 A/A RSSI Gain Stability () 10log(A RSSI/A RSSI-NOM) where A RSSI-NOM = A RSSI at 3.3V, +25 C (Note 3) db db 0.24 db Note 5: Deterministic jitter is the sum of pulse-width distortion (PWD) and pattern-dependent jitter (PDJ). Note 6: Power-supply noise rejection PSNR = -20log( V OUT / ), where V OUT is the differential output voltage and is the noise on. Note 7: IOUT_ CM( IIN = 400µ A) IOUT_ CM( IIN = 0µ A) ARSSI = 400µ A I I where I OUT + OUT OUT CM = + _ 2 RSSI range is from IIN = 6µ A to 500µ A 3

4 ( = +3.3V, C IN = 0.85pF, T A = +25 C, unless otherwise noted.) INPUT-REFERRED NOISE (narms) UNFILTER INPUT-REFERRED NOISE vs. TEMPERATURE C IN = 1.5pF C IN = 0.85pF C IN = 0.5pF TEMPERATURE ( C) toc01 INPUT-REFERRED NOISE (narms) BW = 2.1GHz INPUT-REFERRED NOISE vs. TEMPERATURE C IN = 1.5pF C IN = 0.85pF C IN = 0.5pF TEMPERATURE ( C) toc02 GAIN (db) M FREQUENCY RESPONSE 100M 1G FREQUENCY (Hz) toc03 10G DETERMINISTIC JITTER (psp-p) DETERMINISTIC JITTER vs. INPUT AMPLITUDE 2.7Gbp SONET 2.1Gbps FIBRE CHANNEL toc04 TRANSIMPEDANCE (db Ω) SMALL-SIGNAL TRANSIMPEDANCE vs. TEMPERATURE toc05 EYE DIAGRAM INPUT = 20µA P-P, DATA RATE = 2.1Gbps toc06 K28-5 PATTERN 5mV/div INPUT AMPLITUDE (ma P-P) EYE DIAGRAM INPUT = 20µA P-P, DATA RATE = 2.7Gbps toc PATTERN TEMPERATURE ( C) EYE DIAGRAM INPUT = 2mA P-P, DATA RATE = 2.1Gbps toc08 K28-5 PATTERN 60ps/div EYE DIAGRAM INPUT = 2mA P-P, DATA RATE = 2.7Gbps toc PATTERN 6mV/div 30mV/div 30mV/div 60ps/div 60ps/div 60ps/div 4

5 ( ) ( = +3.3V, C IN = 0.85pF, T A = +25 C, unless otherwise noted.) S22 (db) DIFFERENTIAL S22 vs. FREQUENCY FREQUENCY (MHz) toc10 SUPPLY CURRENT (ma) SUPPLY CURRENT vs. TEMPERATURE TEMPERATURE ( C) toc11 OUTPUT VOLTAGE (mvp-p) DC TRANSFER FUNCTION (V FILT = 0V) INPUT CURRENT (ma P-P) toc12 MAX3748 RSSI OUTPUT (µa) RSSI, MAX3748A T A = -40 C T A = +85 C toc13 3dB BANDWIDTH (GHz) BANDWIDTH vs. TEMPERATURE C IN = 0.6pF toc14 6mV/div EYE DIAGRAM TEMPERATURE = +100 C INPUT = 20µA P-P DATA RATE = 2.7Gbps toc PRBS AVERAGE INPUT CURRENT (µa) TEMPERATURE ( C) 60ps/div 5

6 / BOND PAD NAME 1, 3 Supply Voltage FUNCTION 2, 7 N.C. No Connection 4 IN TIAInput. Signal current from photodiode flows into this pin. 5 FILTER 6, 10 GND Supply Ground 8 9 Provides bias voltage for the photodiode through a 580Ω resistor to. When grounded, this V pin disables CC 580Ω the DC cancellation amplifier to allow a DC path from IN to and for IN OUTtesting. Inverting Data Output. Current flowing into IN causes the voltage at to decrease. For the, the common IN mode between and is proportional to the average input OUTcurrent. Noninverting Data Output. Current flowing into IN causes the voltage at to increase. For the, the common IN mode between and is proportional to the average input current. R F R F TRANSIMPEDANCE AMPLIFIER TRANSIMPEDANCE AMPLIFIER IN IN DC CANCELLATION CIRCUIT RSSI DC CANCELLATION CIRCUIT FILTER FILTER Gbps SFF/SFP 1 (RSSI) 4 TO RSSI R F 2 6

7 AMPLITUDE TIME OUTPUT (SMALL SIGNALS) OUTPUT (LARGE SIGNALS) ( 3) AMPLITUDE INPUT FROM PHOTODIODE INPUT AFTER DC CANCELLATION 100Ω TIME 100Ω MAX3748A 4 5 CML 4. RSSI MAX3748A SFF-8472 MAX3748A 5. 7

8 IN+ IN- MAX3748A RSSI 4 TO-46 MAX3748A RSSI DS1858/DS1859 SFP 16 DS1858/DS DS1859 RSSI (6µA) MAX3748A 6µA 500µA 2.5dB Maxim (500µA) TIA RMS (IN) 1E-12 (BER) 14.1 RMS Sensitivity IN( r log e + 1) = dbm 2ρ( re 1) ρ A/W I N 6 1 ( HFAN Accurately Estimating Optical Receiver Sensitivity.) Overload 2mARMS( r log e + 1) = dbm 2ρ( re 1) 50µA P-P (10% ) Linear Range = 50µ ARMS( r log e + 1) dbm 2ρ( re 1) 1 PARAMETER SYMBOL RELATION Average power P AVG P AVG = (P 0 + P 1) / 2 Extinction ratio r e r e = P 1 / P 0 Optical power of a 1 P 1 P 1 = 2P AVG(r e) / (r e + 1) Optical power of a zero P 0 P 0 = 2P AVG / (r e + 1) Signal amplitude P IN P IN = P 1 - P 0; P IN = 2P AVG(r e - 1) / (r e + 1) Note: Assuming 50% average duty cycle and mark density. 8

9 IN 7 TO IN ESD 500V V/ t (C PD ) ( ) I=C PD C FILTER C PD I NOISE = (V NOISE )(C PD ) / (R FILTER )(C FILTER ) C FILTER = (V NOISE )(C PD ) / (R FILTER )(I NOISE ) = 100mV P-P C PD =0.85pF R FILTER = 600Ω I NOISE 350nA C FILTER = (100mV)(0.85pF) / (600Ω)(350nA) = 405pF 14mils (0.4mm) TOP VIEW OF TO-46 HEADER OPTICAL POWER PI P AVG CASE GROUND PHOTODIODE 400pF TO 1000pF 400pF TO 1000pF PO TIME TO-46 9

10 N.C. IN FILTER GND in (0.76mm) GND 0.05in (1.26mm) N.C. PAD COORDINATES (µm) X COORDINATES (µm) Y TRANSISTOR COUNT: 301 PROCESS: SiGe Bipolar SUBSTRATE: ISOLATED DIE THICKNESS: 0.014in ±0.001in Maxim Maxim Maxim 10 Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA (408) Maxim Integrated Products Printed USA Maxim Integrated Products, Inc.