NCS20061, NCV20061, NCS20062, NCV20062, NCS20064, NCV Operational Amplifier, Rail-to-Rail Input and Output, 3 MHz
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1 NCS, NCV, NCS, NCV, NCS, NCV Operational mplifier, Rail-to-Rail Input and Output, MHz The NCS series operational amplifiers provide rail to rail input and output operation, MHz bandwidth, and are available in single, dual, and quad configurations. Rail to rail operation gives designers use of the entire supply voltage range while taking advantage of the MHz bandwidth. The NCS can operate on supply voltages from.8 to. V over a temperature range from to C. t a.8 V supply, this device has a slew rate of. V/ s while consuming only of quiescent current per channel. Since this is a CMOS device, high input impedance and low bias currents make it ideal for interfacing to a wide variety of signal sensors. The NCS devices are available in a variety of compact packages. Features Rail to Rail Input and Output Wide Supply Range:.8 to. V Wide Bandwidth: MHz High Slew Rate:. V/ s at V S =.8 V Low Supply Current: per Channel at V S =.8 V Low Input Bias Current: p Typical Wide Temperature Range: to C vailable in a Variety of Packages NCV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant SC7 CSE 9 Micro8 /MSOP8 CSE 8 TSSOP 8 CSE 98S SOIC CSE 7 TSOP /SOT CSE 8 8 SOIC 8 CSE 7 TSSOP CSE 98G UDFN CSE 7P pplications Unity Gain Buffer Battery Powered / Low Quiescent Current pplications Low Cost Current Sensing utomotive DEVICE MRKING INFORMTION See general marking information in the device marking section on page of this data sheet. ORDERING INFORMTION See detailed ordering and shipping information on page of this data sheet. Semiconductor Components Industries, LLC, January, Rev. Publication Order Number: NCS/D
2 NCS, NCV, NCS, NCV, NCS, NCV MRKING DIGRMS Single Channel Configuration NCS, NCV XXM SC7 CSE 9 XXXYW TSOP /SOT CSE 8 XX M UDFN CSE 7P Dual Channel Configuration NCS, NCV 8 XXXX YW 8 XXXXXX LYW XXX YWW Micro8 /MSOP8 CSE 8 SOIC 8 CSE 7 TSSOP 8 CSE 98S Quad Channel Configuration NCS, NCV XXXX XXXX LYW XXXXX WLYWWG TSSOP CSE 98G SOIC CSE 7 XXXXX = Specific Device Code = ssembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or = Pb Free Package (Note: Microdot may be in either location)
3 NCS, NCV, NCS, NCV, NCS, NCV Single Channel Configuration NCS, NCV OUT VDD IN+ + VDD VSS OUT VSS + VSS NC + VDD IN+ IN IN OUT IN IN+ SOT (TSOP ) SN Pinout Dual Channel Configuration NCS, NCV SC7, SOT (TSOP ) SQ, SN Pinout OUT Quadruple Channel Configuration NCS, NCV UDFN. x. OUT OUT IN IN+ VSS VDD OUT IN IN+ IN IN+ VDD IN+ IN IN IN+ VSS IN+ IN OUT 7 8 OUT Figure. Pin Connections ORDERING INFORMTION Device Configuration utomotive Marking Package Shipping NCSSQTG NCSSNTG K SOT /TSOP No NCSSNTG K SOT /TSOP NCSMUTG Single P UDFN NCVSQTG H SC7 H SC7 NCVSNTG K SOT /TSOP Yes NCVSNTG K SOT /TSOP NCVMUTG P UDFN NCSDMRG K Micro8/MSOP8 NCSDRG No NCS SOIC 8 NCSDTBRG K TSSOP 8 Dual NCVDMRG K Micro8/MSOP8 NCVDRG Yes NCS SOIC 8 NCVDTBRG K TSSOP 8 NCS_ NCS_ No TBD SOP NCS_ TBD TSSOP NCV_ Quad TBD SOIC TBD SOIC NCV_ Yes TBD SOP NCV_ TBD TSSOP Contact local sales office for more information For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D *NCV Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable.
4 NCS, NCV, NCS, NCV, NCS, NCV BSOLUTE MXIMUM RTINGS (Note ) Rating Symbol Limit Unit Supply Voltage (V DD V SS ) (Note ) V S 7 V Input Voltage V I V SS. to V DD +. V Differential Input Voltage V ID ±V s V Maximum Input Current I I ± m Maximum Output Current I O ± m Continuous Total Power Dissipation (Note ) P D mw Maximum Junction Temperature T J C Storage Temperature Range T STG to C Mounting Temperature (Infrared or Convection sec) T mount C ESD Capability (Note ) Human Body Model Machine Model Charge Device Model ESD HBM ESD MM ESD CDM Latch Up Current (Note ) I LU m Moisture Sensitivity Level (Note ) MSL Level Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Refer to ELECTRICL CHRCTERISTICS for Safe Operating rea.. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability. Shorting output to either VDD or VSS will adversely affect reliability.. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EC Q (JEDEC standard: JESD ) ESD Machine Model tested per EC Q (JEDEC standard: JESD ). Latch up Current tested per JEDEC standard: JESD78. Moisture Sensitivity Level tested per IPC/JEDEC standard: J-STD- V THERML INFORMTION Parameter Symbol Channels Package Junction to mbient Thermal Resistance J Single Dual Quad SC 7 SOT /TSOP UDFN Single Layer Board (Note ) Multi Layer Board (Note 7) Micro8/MSOP8 7 SOIC 8 9 TSSOP 8 9 SOIC SOP TSSOP. Value based on S standard PCB according to JEDEC with. oz copper and a mm copper area 7. Value based on SP standard PCB according to JEDEC 7 with. oz copper and a mm copper area Unit C/W OPERTING RNGES Parameter Symbol Min Max Unit Operating Supply Voltage V S.8. V Differential Input Voltage V ID V S V Input Common Mode Range V ICM V SS. V DD +. V mbient Temperature T C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
5 NCS, NCV, NCS, NCV, NCS, NCV ELECTRICL CHRCTERISTICS T V S =.8 V T = C; R L k ; V CM = V OUT = mid supply unless otherwise noted. Boldface limits apply over the specified temperature range, T = C to C. (Note 8) Parameter Symbol Conditions Min Typ Max Unit INPUT CHRCTERISTICS Input Offset Voltage V OS.. mv mv Offset Voltage Drift V OS / T V/ C Input Bias Current (Note 8) I IB p p Input Offset Current (Note 8) I OS p p Channel Separation XTLK DC db Differential Input Resistance R ID G Common Mode Input Resistance R IN G Differential Input Capacitance C ID pf Common Mode Input Capacitance C CM pf Common Mode Rejection Ratio CMRR V CM = V SS. to V DD db V CM = V SS +. to V DD. OUTPUT CHRCTERISTICS Open Loop Voltage Gain VOL 8 db 8 Short Circuit Current I SC Output to positive rail, sinking current 9 m Output to negative rail, sourcing current Output Voltage High V OH Voltage output swing from positive rail 9 mv Output Voltage Low V OL Voltage output swing from negative rail 9 mv C CHRCTERISTICS Unity Gain Bandwidth UGBW MHz Slew Rate at Unity Gain SR V ID =. Vpp, Gain =. V/ s Phase Margin m Gain Margin m db Settling Time t S V IN =. Vpp, Settling time to.%. s Gain = Settling time to.% Open Loop Output Impedance Z OL f = Hz. NOISE CHRCTERISTICS Total Harmonic Distortion plus Noise THD+N V IN =. Vpp, f = khz, v =. % Input Referred Voltage Noise e n f = khz nv/ Hz f = khz Input Referred Current Noise i n f = khz f/ Hz SUPPLY CHRCTERISTICS Power Supply Rejection Ratio PSRR No Load 7 9 db Power Supply Quiescent Current I DD Per channel, no load 7 8. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
6 NCS, NCV, NCS, NCV, NCS, NCV ELECTRICL CHRCTERISTICS T V S =. V T = C; R L k ; V CM = V OUT = mid supply unless otherwise noted. Boldface limits apply over the specified temperature range, T = C to C. (Note 9) Parameter Symbol Conditions Min Typ Max Unit INPUT CHRCTERISTICS Input Offset Voltage V OS.. mv mv Offset Voltage Drift V OS / T V/ C Input Bias Current (Note 9) I IB p p Input Offset Current (Note 9) I OS p p Channel Separation XTLK DC db Differential Input Resistance R ID G Common Mode Input Resistance R IN G Differential Input Capacitance C ID pf Common Mode Input Capacitance C CM pf Common Mode Rejection Ratio CMRR V CM = V SS. to V DD +. 7 db V CM = V SS +. to V DD. 8 OUTPUT CHRCTERISTICS Open Loop Voltage Gain VOL 9 db 8 Short Circuit Current I SC Output to positive rail, sinking current 9 m Output to negative rail, sourcing current Output Voltage High V OH Voltage output swing from positive rail mv Output Voltage Low V OL Voltage output swing from negative rail mv C CHRCTERISTICS Unity Gain Bandwidth UGBW MHz Slew Rate at Unity Gain SR V IN =. Vpp, Gain =. V/ s Phase Margin m Gain Margin m db Settling Time t S V IN =. Vpp, Settling time to.%. s Gain = Settling time to.%. Open Loop Output Impedance Z OL f = Hz. NOISE CHRCTERISTICS Total Harmonic Distortion plus Noise THD+N V IN =. Vpp, f = khz, v =. % Input Referred Voltage Noise e n f = khz nv/ Hz f = khz Input Referred Current Noise i n f = khz f/ Hz SUPPLY CHRCTERISTICS Power Supply Rejection Ratio PSRR No Load 7 9 db Power Supply Quiescent Current I DD Per channel, no load 8 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
7 NCS, NCV, NCS, NCV, NCS, NCV ELECTRICL CHRCTERISTICS T V S =. V T = C; R L k ; V CM = V OUT = mid supply unless otherwise noted. Boldface limits apply over the specified temperature range, T = C to C. (Note ) Parameter Symbol Conditions Min Typ Max Unit INPUT CHRCTERISTICS Input Offset Voltage V OS.. mv mv Offset Voltage Drift V OS / T V/ C Input Bias Current (Note ) I IB p p Input Offset Current (Note ) I OS p p Channel Separation XTLK DC db Differential Input Resistance R ID G Common Mode Input Resistance R IN G Differential Input Capacitance C ID pf Common Mode Input Capacitance C CM pf Common Mode Rejection Ratio CMRR V CM = V SS. to V DD db V CM = V SS +. to V DD. OUTPUT CHRCTERISTICS Open Loop Voltage Gain VOL 9 db 8 Short Circuit Current I SC Output to positive rail, sinking current 9 m Output to negative rail, sourcing current Output Voltage High V OH Voltage output swing from positive rail mv Output Voltage Low V OL Voltage output swing from negative rail mv C CHRCTERISTICS Unity Gain Bandwidth UGBW MHz Slew Rate at Unity Gain SR V ID = Vpp, Gain =. V/ s Phase Margin m Gain Margin m db Settling Time t S V IN = Vpp, Settling time to.%. s Gain = Settling time to.%. Open Loop Output Impedance Z OL f = Hz. NOISE CHRCTERISTICS Total Harmonic Distortion plus Noise THD+N V IN = Vpp, f = khz, v =. % Input Referred Voltage Noise e n f = khz nv/ Hz f = khz Input Referred Current Noise i n f = khz f/ Hz SUPPLY CHRCTERISTICS Power Supply Rejection Ratio PSRR No Load 7 9 db Power Supply Quiescent Current I DD Per channel, no load. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7
8 NCS, NCV, NCS, NCV, NCS, NCV TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified 8 8 SUPPLY CURRENT ( ) T = C T = C SUPPLY CURRENT ( ) V S =. V V S =. V T = C V S =.8 V 8 SUPPLY VOLTGE (V) TEMPERTURE ( C) Figure. Quiescent Current per Channel vs. Supply Voltage Figure. Quiescent Current vs. Temperature.. OFFSET VOLTGE (mv)..... T = C T = C T = C OFFSET VOLTGE (mv)..... V S =.8 V V S =. V V S =. V SUPPLY VOLTGE (V) TEMPERTURE ( C) Figure. Offset Voltage vs. Supply Voltage Figure. Offset Voltage vs. Temperature OFFSET VOLTGE (mv).7 V S =. V units..... COMMON MODE VOLTGE (V). Figure. Offset Voltage vs. Common Mode Voltage.7 GIN (db) 8 Gain R L = k C L = pf T = C k k k Phase Margin M FREQUENCY (Hz) M 8 M Figure 7. Open loop Gain and Phase Margin vs. Frequency 9 PHSE MRGIN ( ) 8
9 NCS, NCV, NCS, NCV, NCS, NCV TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified PHSE MRGIN ( ) 7 V S =. V R L = k T = C THD+N (%).. V S =. V f IN = khz V =.... CPCITIVE LOD (pf) OUTPUT VOLTGE (Vpp) Figure 8. Phase Margin vs. Capacitive Load Figure 9. THD + N vs. Output Voltage THD+N (%).. V = V S =.8 V V S =. V VOLTGE NOISE (nv/ Hz) V S =. V. k V S =. V k k k k k FREQUENCY (Hz) FREQUENCY (Hz) Figure. THD + N vs. Frequency Figure. Input Voltage Noise vs. Frequency CURRENT NOISE (f/ Hz) k V S =. V k k PSRR (db) V S =.8 V, PSRR+ V S =.8 V, PSRR V S =. V, PSRR+ k V S =. V, PSRR k k M FREQUENCY (Hz) FREQUENCY (Hz) Figure. Input Current Noise vs. Frequency Figure. PSRR vs. Frequency 9
10 NCS, NCV, NCS, NCV, NCS, NCV TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified CMRR (db) 8 V S =. V V S =. V V S =.8 V V = OUTPUT VOLTGE TO POSITIVE RIL (mv) V S =.8 V V S =. V V S =. V k k k M FREQUENCY (Hz) Figure. CMRR vs. Frequency OUTPUT CURRENT (m) Figure. Output Voltage High to Rail OUTPUT VOLTGE TO NEGTIVE RIL (mv) V S =.8 V V S =. V V S =. V VOLTGE (V) Input Output OUTPUT CURRENT (m) TIME ( s) Figure. Output Voltage Low to Rail Figure 7. Non Inverting Small Signal Transient Response..8. Input Output..8. Input Output.. VOLTGE (V)... VOLTGE (V) TIME ( s) TIME ( s) Figure 8. Inverting Small Signal Transient Response Figure 9. Non Inverting Large Signal Transient Response
11 NCS, NCV, NCS, NCV, NCS, NCV TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified.. Input Output VOLTGE (V).... CURRENT (p) I IB+ I IB. I OS. 8 TIME ( s) TEMPERTURE ( C) Figure. Inverting Large Signal Transient Response Figure. Input Bias and Offset Current vs. Temperature CURRENT (p) 8 I IB+ VOLTGE ( V) I OS I IB COMMON MODE VOLTGE (V) TIME (s) Figure. Input Bias Current vs. Common Mode Voltage Figure.. Hz to Hz Noise k CHNNEL SEPRTION (db) 8 OUTPUT IMPEDNCE ( ) k. V = V S =.8 V V S =. V k k k FREQUENCY (Hz) M Figure. Channel Separation vs. Frequency M. k k FREQUENCY (Hz) k Figure. Output Impedance vs. Frequency M
12 NCS, NCV, NCS, NCV, NCS, NCV TYPICL PERFORMNCE CHRCTERISTICS T = C, R L k, V CM = V OUT = mid supply unless otherwise specified... SR+ SLEW RTE (V/ s) SR TEMPERTURE ( C) Figure. Slew Rate vs. Temperature
13 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS SC 88 (SC 7 /SOT ) CSE 9 ISSUE L S G B D PL. (.8) M B M N NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. 9 OBSOLETE. NEW STNDRD 9.. DIMENSIONS ND B DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. INCHES MILLIMETERS DIM MIN MX MIN MX B.... C...8. D.... G. BSC. BSC H J.... K.... N.8 REF. REF S C J H K SOLDER FOOTPRINT SCLE : mm inches
14 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS X X. NOTE T. B. T B H G TOP VIEW SIDE VIEW C D X. C B S C SETING PLNE J K TSOP CSE 8 ISSUE L DETIL Z END VIEW M DETIL Z NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. MXIMUM LED THICKNESS INCLUDES LED FINISH THICKNESS. MINIMUM LED THICKNESS IS THE MINIMUM THICKNESS OF BSE MTERIL.. DIMENSIONS ND B DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR GTE BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXCEED. PER SIDE. DIMENSION.. OPTIONL CONSTRUCTION: N DDITIONL TRIMMED LED IS LLOWED IN THIS LOCTION. TRIMMED LED NOT TO EXTEND MORE THN. FROM BODY. MILLIMETERS DIM MIN MX. BSC B. BSC C.9. D.. G.9 BSC H.. J.. K.. M S.. SOLDERING FOOTPRINT* SCLE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
15 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS X. C D ÉÉ ÉÉ B UDFN.x.,.P CSE 7P ISSUE O NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. DIMENSION b PPLIES TO PLTED TERMINL ND IS MESURED BETWEEN. ND. mm FROM TERMINL.. COPLNRITY PPLIES TO THE EXPOSED PD S WELL S THE TERMINLS. PIN ONE E DETIL REFERENCE OPTIONL MILLIMETERS X CONSTRUCTION DIM MIN MX... C.. EXPOSED Cu MOLD CMPD. REF TOP VIEW b.. D. BSC () E. BSC DETIL B e. BSC D... C E.. K. DETIL B L.. X. C OPTIONL L.. CONSTRUCTION SIDE VIEW C SETING PLNE SOLDERMSK DEFINED MOUNTING FOOTPRINT* DETIL D. X L L L X K E X b e. C B BOTTOM VIEW. C NOTE X...9. PITCH X. DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
16 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS H E D E Micro8 CSE 8 ISSUE J NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION DOES NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. MOLD FLSH, PROTRUSIONS OR GTE BURRS SHLL NOT EXCEED. (.) PER SIDE.. DIMENSION B DOES NOT INCLUDE INTERLED FLSH OR PROTRUSION. INTERLED FLSH OR PROTRUSION SHLL NOT EXCEED. (.) PER SIDE.. 8- OBSOLETE, NEW STNDRD 8-. PIN ID T SETING PLNE.8 (.) e b 8 PL.8 (.) M T B S S c L MILLIMETERS INCHES DIM MIN NOM MX MIN NOM MX b c D E e. BSC. BSC L H E RECOMMENDED SOLDERING FOOTPRINT* 8X.8 8X.8.. PITCH DIMENSION: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
17 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS X B Y Z H 8 G D S C. (.) M Z Y S X S. (.) M SETING PLNE Y. (.) SOIC 8 NB CSE 7 7 ISSUE K M N X M K SOLDERING FOOTPRINT*.. J NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION ND B DO NOT INCLUDE MOLD PROTRUSION.. MXIMUM MOLD PROTRUSION. (.) PER SIDE.. DIMENSION D DOES NOT INCLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE.7 (.) TOTL IN EXCESS OF THE D DIMENSION T MXIMUM MTERIL CONDITION.. 7 THRU 7 RE OBSOLETE. NEW STNDRD IS 7 7. MILLIMETERS INCHES DIM MIN MX MIN MX B C D.... G.7 BSC. BSC H.... J K..7.. M 8 8 N.... S STYLE : PIN. SOURCE. GTE. SOURCE. GTE. DRIN. DRIN 7. DRIN 8. DRIN SCLE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
18 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS TSSOP 8 CSE 98S ISSUE C. (.8) T. (.8) T L U U.7 (.) T SETING PLNE S PIN IDENT S D X L/ C 8 8x V K REF. (.) M T U S V S G B U J N DETIL E N J ÉÉÉÉ ÉÉÉÉ ÇÇÇÇ K K SECTION N N. (.) M W NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION DOES NOT INCLUDE MOLD FLSH. PROTRUSIONS OR GTE BURRS. MOLD FLSH OR GTE BURRS SHLL NOT EXCEED. (.) PER SIDE.. DIMENSION B DOES NOT INCLUDE INTERLED FLSH OR PROTRUSION. INTERLED FLSH OR PROTRUSION SHLL NOT EXCEED. (.) PER SIDE.. TERMINL NUMBERS RE SHOWN FOR REFERENCE ONLY.. DIMENSION ND B RE TO BE DETERMINED T DTUM PLNE -W-. MILLIMETERS INCHES DIM MIN MX MIN MX.9... B C D.... F G. BSC. BSC J J.9... K K L. BSC. BSC M 8 8 F DETIL E 8
19 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS H 8. M B M e D 7 X b B E. M C S B S C SETING PLNE SOIC NB CSE 7 ISSUE K DETIL h X M L DETIL NOTES:. DIMENSIONING ND TOLERNCING PER SME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. DIMENSION b DOES NOT INCLUDE DMBR PROTRUSION. LLOWBLE PROTRUSION SHLL BE. TOTL IN EXCESS OF T MXIMUM MTERIL CONDITION.. DIMENSIONS D ND E DO NOT INCLUDE MOLD PROTRUSIONS.. MXIMUM MOLD PROTRUSION. PER SIDE. MILLIMETERS INCHES DIM MIN MX MIN MX b D E e.7 BSC. BSC H h....9 L....9 M 7 7 SOLDERING FOOTPRINT*. X.8.7 PITCH X.8 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9
20 NCS, NCV, NCS, NCV, NCS, NCV PCKGE DIMENSIONS. (.) T. (.) T L. (.) T SETING PLNE U U S X L/ PIN IDENT. S D C G X K REF V. (.) M T U S V S 8 7 B U H N TSSOP CSE 98G ISSUE B N J J F DETIL E DETIL E. (.) K K M ÇÇÇ ÉÉÉ SECTION N N W NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y.M, 98.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION DOES NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. MOLD FLSH OR GTE BURRS SHLL NOT EXCEED. (.) PER SIDE.. DIMENSION B DOES NOT INCLUDE INTERLED FLSH OR PROTRUSION. INTERLED FLSH OR PROTRUSION SHLL NOT EXCEED. (.) PER SIDE.. DIMENSION K DOES NOT INCLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE.8 (.) TOTL IN EXCESS OF THE K DIMENSION T MXIMUM MTERIL CONDITION.. TERMINL NUMBERS RE SHOWN FOR REFERENCE ONLY. 7. DIMENSION ND B RE TO BE DETERMINED T DTUM PLNE W. MILLIMETERS INCHES DIM MIN MX MIN MX B C..7 D.... F..7.. G. BSC. BSC H.... J J.9... K K L. BSC. BSC M 8 8 SOLDERING FOOTPRINT 7.. PITCH X. Micro8 is a trademark of International Rectifier X. DIMENSIONS: MILLIMETERS ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 9 E. nd Pkwy, urora, Colorado 8 US Phone: 7 7 or 8 8 Toll Free US/Canada Fax: 7 7 or 8 87 Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8 87 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCS/D
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MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package
MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.
MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k
MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
LM321. Single Channel Operational Amplifier
Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging
MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS
MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction
NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK
Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS
MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art
MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection
MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS
MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching
NCS2250, NCV2250, NCS2252, NCV2252. Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail
NCS22, NCV22, NCS222, NCV222 Comparator, High Speed, ns, Low Voltage, Rail-to-Rail The NCS22 and NCS222 low voltage comparators feature fast response time and rail to rail input and output. The extended
NLX2G66. Dual Bilateral Analog Switch / Digital Multiplexer
Dual Bilateral nalog Switch / Digital Multiplexer The NLX2G66 is a dual single pole, single throw (SPST) analog switch / digital multiplexer. This single supply voltage IC is designed with a sub micron
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used
MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM13LT1G, NRVBM13LT1G, MBRM13LT3G, NRVBM13LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBR140SF, NRVB140SF. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.
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NCS2200, NCS2200A, NCS2202, NCS2202A. Comparators, 0.85 V to 6 V, 10 A, 1 s, Rail-to-Rail, Open Drain and Push-Pull Outputs
NCS22, NCS22, NCS222, NCS222 Comparators,.8 V to 6 V,, s, Rail-to-Rail, Open Drain and Push-Pull Outputs The NCS22 series is an industry first subone volt, low power comparator family. These devices consume
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
TCA0372, TCA0372B, NCV0372B. 1.0 A Output Current, Dual Power Operational Amplifiers
TC0372, TC0372B, V0372B.0 Output Current, Dual Power Operational mplifiers The TC0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including
J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS
High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru
MC34064, MC33064, NCV33064
MC3464, MC3364, NCV3364 Undervoltage Sensing Circuit The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor based systems. It offers the designer
MC74VHC1GT66. SPST (NO) Normally Open Analog Switch
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PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27A, Dual N-Channel
Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
NTD4813N. Power MOSFET 30 V, 40 A, Single N -Channel, DPAK/IPAK
NTD813N Power MOSFET 3 V,, Single N -Channel, DPK/IPK Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These
7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
NCP436, NCP437. 3A Ultra-Small Controlled Load Switch with Auto-Discharge Path
3 Ultra-Small Controlled Load Switch with uto-discharge Path The NCP436 and NCP437 are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
EFC2J004NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 mω, 14 A, Dual N-Channel
EFCJNUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 1 V,.1 mω, 1, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
MUN224, MMUN224L, MUN524, DTC4YE, DTC4YM, NSBC4YF Digital Transistors (BRT) R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
Distributed by: www.jameco.com -800-8-44 The content and copyrights of the attached material are the property of its owner. Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Digital Transistors (BRT) R = 47 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
LM339S, LM2901S. Single Supply Quad Comparators
LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features
NCS MHz Voltage Feedback Op Amp
75 MHz Voltage Feedback Op Amp NCS255 is a 75 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Digital Transistors (BRT) R = 4.7 k, R = 4.7 k PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage
Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage The is high performance linear regulator, offering a very wide operating input voltage range of up
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NCV Amp H-Bridge Driver
V770 2.0 mp HBridge Driver This automotive grade HBridge driver provides a flexible means for controlling loads requiring bidirectional drive currents. Bridge outputs are protected from overcurrent at
NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A
MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)
NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series
NCP5932, NCV5932 3. A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series The NCP5932 is a high precision, very low dropout (VLDO), low ground current positive voltage regulator that is capable
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
T4302. Power MOSFET. 68 A, 30 V, N Channel DPAK/IPAK
NTD Power MOSFET 68, V, NChannel DPK/IPK Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified I
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon
MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and
MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive