2.9 Junction field-effect transistors

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1 2.9 Junction field-effect transistors The field effect transistor was proposed by Julius Lilienfeld in U patents in 1926 and 1933 (1,900,018). Moreover, hockley, Brattain, and Bardeen were investigating the field effect transistor in Though, the extreme difficulties sidetracked them into inventing the bipolar transistor instead. hockley s field effect transistor theory was published in However, the materials processing technology was not mature enough until 1960 when John Atalla produced a working device. A field effect transistor(fet) is a unipolar device, conducting a current using only one kind of charge carrier. If based on an -type slab of semiconductor, the carriers are electrons. Conversely, a -type based device uses only holes. At the circuit level, field effect transistor operation is simple. A voltage applied to the gate, input element, controls the resistance of the channel, the unipolar region between the gate regions. (Figure 2.38) In an -channel device, this is a lightly doped -type slab of silicon with terminals at the ends. The source and drain terminals are analogous to the emitter and collector, respectively, of a BJT. In an -channel device, a heavy -type region on both sides of thecenteroftheslabservesasacontrolelectrode,thegate.thegateisanalogoustothebase ofabjt. Cleanliness is next to godliness applies to the manufacture of field effect transistors. Thoughitispossibletomakebipolartransistorsoutsideofacleanroom,itisanecessity for field effect transistors. Even in such an environment, manufacture is tricky because of contamination control issues. The unipolar field effect transistor is conceptually simple, but difficult to manufacture. Most transistors today are a metal oxide semiconductor variety(later section) of the field effect transistor contained within integrated circuits. However, discrete JFET devices are available. A properly biased -channel junction field effect transistor(jfet) is shown in Figure The gate constitutes a diode junction to the source to drain semiconductor slab. The gate is

2 Channel + - Figure 2.38: Junction field effect transistor cross-section. reverse biased. If a voltage(or an ohmmeter) were applied between the source and drain, the -type bar would conduct in either direction because of the doping. either gate nor gate bias is required for conduction. If a gate junction is formed as shown, conduction can be controlled bythedegreeofreversebias. Figure 2.39 shows the depletion region at the gate junction. This is due to diffusion of holes from the -type gate region into the -type channel, giving the charge separation about the junction, with a non-conductive depletion region at the junction. The depletion region extendsmoredeeplyintothechannelsideduetotheheavygatedopingandlightchannel doping. The thickness of the depletion region can be increased Figure 2.39 by applying moderate reverse bias. This increases the resistance of the source to drain channel by narrowing the channel. Increasing the reverse bias at(c) increases the depletion region, decreases the channelwidth,andincreasesthechannelresistance. IncreasingthereversebiasV at(d)will pinch-offthechannelcurrent. Thechannelresistancewillbeveryhigh. ThisV atwhich pinch-offoccursisv,thepinch-offvoltage. Itistypicallyafewvolts. Insummation,the channel resistance can be controlled by the degree of reverse biasing on the gate. Thesourceanddrainareinterchangeable,andthesourcetodraincurrentmayflowin eitherdirectionforlowleveldrainbatteryvoltage( 0.6V).Thatis,thedrainbatterymay bereplacedbyalowvoltageacsource. Forahighdrainpowersupplyvoltage,to10 sof volts for small signal devices, the polarity must be as indicated in Figure This drain power supply, not shown in previous figures, distorts the depletion region, enlarging it on the drainsideofthegate. ThisisamorecorrectrepresentationforcommonCdrainsupply voltages,fromafewtotensofvolts. AsdrainvoltageV isincreased,thegatedepletion region expands toward the drain. This increases the length of the narrow channel, increasing its resistance a little. We say a little because large resistance changes are due to changing gate bias. Figure 2.40 shows the schematic symbol for an -channel field effect transistor

3 Figure 2.40 shows a large electron current flow from(-) battery terminal, to FET source, out the drain, returning to the(+) battery terminal. This current flow may be controlled by varyingthegatevoltage. Aloadinserieswiththebatteryseesanamplifiedversionofthe changing gate voltage. -channel field effect transistors are also available. The channel is made of -type material. Thegateisaheavilydopped-typeregion. Allthevoltagesourcesarereversedinthe -channel circuit(figure 2.41) as compared with the more popular -channel device. Also note,thearrowpointsoutofthegateoftheschematicsymbolofthe-channelfieldeffect transistor. As the positive gate bias voltage is increased, the resistance of the -channel increases, decreasing the current flow in the drain circuit. iscrete devices are manufactured with the cross-section shown in Figure The crossmywbut.com -type (c) (d) Figure 2.39: -channel JFET: epletion at gate diode. Reverse biased gate diode increases depletion region.(c) Increasing reverse bias enlarges depletion region.(d) Increasing reverse bias pinches-off the - channel. compared to the silicon cross-section at. The gate arrow points in the same direction as a junction diode. The pointing arrow and non-pointing bar correspond to and -type semiconductors, respectively. electron current -type to Figure 2.40: -channel JFET electron current flow from source to drain in cross-section, schematic symbol.

4 to -type Figure 2.41: -channel JFET: -type gate, -type channel, reversed voltage sources compared with -channel device. ote reversed gate arrow and voltage sources on schematic. section, oriented so that it corresponds to the schematic symbol, is upside down with respect toasemiconductorwafer. Thatis,thegateconnectionsareonthetopofthewafer. The gateisheavilydoped, +,todiffuseholeswellintothechannelforalargedepletionregion. Thesourceanddrainconnectionsinthis-channeldeviceareheavilydoped, tolower connection resistance. However, the channel surrounding the gate is lightly doped to allow holesfromthegatetodiffusedeeplyintothechannel.thatisthe region (c) substrate + Figure 2.42: Junction field effect transistor: iscrete device cross-section, schematic symbol,(c) integrated circuit device cross-section. AllthreeFETterminalsareavailableonthetopofthediefortheintegratedcircuitversion so that a metalization layer(not shown) can interconnect multiple components.(figure 2.42(c) ) Integrated circuit FET s are used in analog circuits for the high gate input resistance.. The -channelregionunderthegatemustbeverythinsothattheintrinsicregionaboutthegate cancontrolandpinch-offthechannel.thus,gateregionsonbothsidesofthechannelarenot necessary. The static induction field effect transistor(it) is a short channel device with a buried gate. (Figure2.43)Itisapowerdevice,asopposedtoasmallsignaldevice.Thelowgateresistance andlowgatetosourcecapacitancemakeforafastswitchingdevice. TheITiscapableof hundredsofampsandthousandsofvolts.and,issaidtobecapableofanincrediblefrequency of 10 ghz.[24]

5 Cross-section Junction field-effect transistor (static induction type) chematic symbol Figure 2.43: Junction field effect transistor (static induction type): Cross-section, schematic symbol. substrate - Figure 2.44: Metal semiconductor field effect transistor(mefet): schematic symbol, cross-section.

6 The Metal semiconductor field effect transistor(mefet) is similar to a JFET except the gateisaschottkydiodeinsteadofajunctiondiode. Aschottkydiodeisametalrectifying contact to a semiconductor compared with a more common ohmic contact. In Figure 2.44 the thesourceanddrainareheavilydoped( ). Thechannelislightlydoped( ). MEFET s arehigherspeedthanjfet s. TheMEETisadepletionmodedevice,normallyon,likea JFET. They are used as microwave power amplifiers to 30 ghz. MEFET s can be fabricated from silicon, gallium arsenide, indium phosphide, silicon carbide, and the diamond allotrope of carbon. REVIEW: The unipolar junction field effect transistor(fet or JFET) is so called because conduction inthechannelisduetoonetypeofcarrier The JFET source, gate, and drain correspond to the BJT s emitter, base, and collector, respectively. Application of reverse bias to the gate varies the channel resistance by expanding the gate diode depletion region Insulated-gate field-effect transistors(mofet) The insulated-gate field-effect transistor(ifet), also known as the metal oxide field effect transistor(mofet), is a derivative of the field effect transistor(fet). Today, most transistors are of the MOFET type as components of digital integrated circuits. Though discrete BJT s are more numerous than discrete MOFET s. The MOFET transistor count within an integrated circuit may approach hundreds of a million. The dimensions of individual MOFET devices are under a micron, decreasing every 18 months. Much larger MOFET s are capable ofswitchingnearly100amperesofcurrentatlowvoltages;somehandlenearly1000vatlower currents. These devices occupy a good fraction of a square centimeter of silicon. MOFET s find much wider application than JFET s. However, MOFET power devices are not as widely used as bipolar junction transistors at this time. The MOFET has source, gate, and drain terminals like the FET. However, the gate lead doesnotmakeadirectconnectiontothesiliconcomparedwiththecaseforthefet.the MOFET gate is a metallic or polysilicon layer atop a silicon dioxide insulator. The gate bears a resemblance to a metal oxide semiconductor(mo) capacitor in Figure When charged, the plates of the capacitor take on the charge polarity of the respective battery terminals. The lower plate is -type silicon from which electrons are repelled by the negative(-) battery terminal toward the oxide, and attracted by the positive(+) top plate. This excess of electrons near the oxide creates an inverted(excess of electrons) channel under the oxide. This channel is also accompanied by a depletion region isolating the channel from the bulk silicon substrate. InFigure2.46theMOcapacitorisplacedbetweenapairof-typediffusionsinatypesubstrate.Withnochargeonthecapacitor,nobiasonthegate,the-typediffusions,the source and drain, remain electrically isolated. Apositivebiasappliedtothegate,chargesthecapacitor(thegate).Thegateatoptheoxide takesonapositivechargefromthegatebiasbattery.the-typesubstratebelowthegatetakes

7 oxide + - oxide depletion inverted channel Figure 2.45: -channel MO capacitor: no charge, charged. Ν depletion - + inverted channel depletion - + Figure 2.46: -channel MOFET(enhancement type): 0 V gate bias, positive gate bias. onanegativecharge. Aninversionregionwithanexcessofelectronsformsbelowthegate oxide. This region now connects the source and drain -type regions, forming a continuous -regionfromsourcetodrain. Thus,theMOFET,liketheFETisaunipolardevice. One type of charge carrier is responsible for conduction. This example is an -channel MOFET. Conduction of a large current from source to drain is possible with a voltage applied between these connections. A practical circuit would have a load in series with the drain battery in Figure The MOFET described above in Figure 2.46 is known as an enhancement mode MOFET. The non-conducting, off, channel is turned on by enhancing the channel below the gate by applicationofabias.thisisthemostcommonkindofdevice.theotherkindofmofetwill not be described here. ee the Insulated-gate field-effect transistor chapter for the depletion mode device. TheMOFET,liketheFET,isavoltagecontrolleddevice. Avoltageinputtothegate controlstheflowofcurrentfromsourcetodrain.thegatedoesnotdrawacontinuouscurrent. Though, the gate draws a surge of current to charge the gate capacitance. The cross-section of an -channel discrete MOFET is shown in Figure iscrete devicesareusuallyoptimizedforhighpowerswitching.the indicatesthatthesourceand drain are heavily -type doped. This minimizes resistive losses in the high current path from sourcetodrain.the indicateslightdoping.the-regionunderthegate,betweensource anddraincanbeinvertedbyapplicationofapositivebiasvoltage. Thedopingprofileisa cross-section, which may be laid out in a serpentine pattern on the silicon die. This greatly increases the area, and consequently, the current handling ability.

8 - inversion = silicon dioxide insulator Figure 2.47: -channel MOFET(enhancement type): Cross-section, schematic symbol. The MOFET schematic symbol in Figure 2.47 shows a floating gate, indicating no direct connection to the silicon substrate. The broken line from source to drain indicates that thisdeviceisoff,notconducting,withzerobiasonthegate. Anormally off MOFETis anenhancementmodedevice. Thechannelmustbeenhancedbyapplicationofabiastothe gate for conduction. The pointing end of the substrate arrow corresponds to -type material, which points toward an -type channel, the non-pointing end. This is the symbol for an -channel MOFET. The arrow points in the opposite direction for a -channel device(not shown). MOFET s are four terminal devices: source, gate, drain, and substrate. The substrate is connected to the source in discrete MOFET s, making the packaged part a three terminal device. MOFET s, that are part of an integrated circuit, have the substrate common to all devices, unless purposely isolated. This common connection may be bonded out of the die for connection to a ground or power supply bias voltage. - inversion = silicon dioxide insulator Figure 2.48: -channel V-MO transistor: Cross-section, schematic symbol. TheV-MOdevicein(Figure2.48)isanimprovedpowerMOFETwiththedopingprofile arranged for lower on-state source to drain resistance. VMO takes its name from the V-

9 shaped gate region, which increases the cross-sectional area of the source-drain path. This minimizes losses and allows switching of higher levels of power. UMO, a variation using a U-shaped grove, is more reproducible in manufacture. REVIEW: MOFET s are unipoar conduction devices, conduction with one type of charge carrier, likeafet,butunlikeabjt. AMOFETisavoltagecontrolleddevicelikeaFET.Agatevoltageinputcontrolsthe source to drain current. The MOFET gate draws no continuous current, except leakage. However, a considerable initial surge of current is required to charge the gate capacitance.

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