LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference

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1 LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference General Description The LM613 consists of dual op-amps, dual comparators, and a programmable voltage reference in a 16-pin package. The op-amps out-performs most single-supply op-amps by providing higher speed and bandwidth along with low supply current. This device was specifically designed to lower cost and board space requirements in transducer, test, measurement, and data acquisition systems. Combining a stable voltage reference with wide output swing op-amps makes the LM613 ideal for single supply transducers, signal conditioning and bridge driving where large common-mode-signals are common. The voltage reference consists of a reliable band-gap design that maintains low dynamic output impedance (1Ω typical), excellent initial tolerance (0.6%), and the ability to be programmed from 1.2V to 6.3V via two external resistors. The voltage reference is very stable even when driving large capacitive loads, as are commonly encountered in CMOS data acquisition systems. As a member of National s Super-Block family, the LM613 is a space-saving monolithic alternative to a multi-chip solution, offering a high level of integration without sacrificing performance. Top View E Package Pinout DS Features OP AMP n Low operating current (Op Amp): 300 µa n Wide supply voltage range: 4V to 36V n Wide common-mode range: V to (V + 1.8V) n Wide differential input voltage: ±36V n Available in plastic package rated for Military Temp. Range Operation REFERENCE n Adjustable output voltage: 1.2V to 6.3V n Tight initial tolerance available: ±0.6% n Wide operating current range: 17 µa to 20 ma n Tolerant of load capacitance Applications n Transducer bridge driver n Process and mass flow control systems n Power supply voltage monitor n Buffered voltage references for A/D s *10k must be low t.c. trimpot Ultra Low Noise, 10.00V Reference. Total output noise is typically 14 µv RMS. August 2000 DS LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference DS Super-Block is a trademark of National Semiconductor Corporation National Semiconductor Corporation DS

2 LM613 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Voltage on Any Pin Except V R (referred to V pin) (Note 2) (Note 3) Current through Any Input Pin &V R Pin Differential Input Voltage Military and Industrial Commercial Storage Temperature Range Maximum Junction Temp.(Note 4) 36V (Max) 0.3V (Min) ±20 ma ±36V ±32V 65 C T J +150 C 150 C Thermal Resistance, Junction-to-Ambient (Note 5) N Package WM Package Soldering Information (10 Sec.) N Package WM Package ESD Tolerance (Note 6) Operating Temperature Range LM613AI, LM613BI: LM613AM, LM613M: LM613C: 100 C/W 150 C/W 260 C 220 C ±1 kv 40 C to +85 C 55 C to +125 C 0 C T J +70 C Electrical Characteristics These specifications apply for V = GND = 0V, V + = 5V, V CM =V OUT = 2.5V, I R = 100 µa, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for T J = 25 C; limits in boldface type apply over the Operating Temperature Range. LM613AM LM613M Typical LM613AI LM613I Symbol Parameter Conditions (Note 7) Limits LM613C Units (Note 8) Limits (Note 8) I S Total Supply Current R LOAD =, µa (Max) 4V V + 36V (32V for LM613C) µa (Max) V S Supply Voltage Range V (Min) V (Min) V (Max) V (Max) OPERATIONAL AMPLIFIERS V OS1 V OS Over Supply 4V V + 36V mv (Max) (4V V + 32V for LM613C) mv (Max) V OS2 V OS Over V CM V CM = 0V through V CM = mv (Max) (V + 1.8V), V + = 30V, V =0V mv (Max) Average V OS Drift (Note 8) 15 µv/ C (Max) I B Input Bias Current na (Max) na (Max) I OS Input Offset Current na (Max) na (Max) Average Offset Current 4 pa/ C R IN Input Resistance Differential 1000 MΩ C IN Input Capacitance Common-Mode 6 pf e n Voltage Noise f = 100 Hz, Input Referred 74 I n Current Noise f = 100 Hz, Input Referred 58 CMRR Common-Mode V + = 30V, 0V V CM (V + 1.8V) db (Min) Rejection Ratio CMRR = 20 log ( V CM / V OS ) db (Min) PSRR Power Supply 4V V + 30V, V CM =V + /2, db (Min) Rejection Ratio PSRR = 20 log ( V + /V OS ) db (Min) 2

3 Electrical Characteristics (Continued) These specifications apply for V = GND = 0V, V + = 5V, V CM =V OUT = 2.5V, I R = 100 µa, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for T J = 25 C; limits in boldface type apply over the Operating Temperature Range. LM613AM LM613M Typical LM613AI LM613I Symbol Parameter Conditions (Note 7) Limits LM613C Units (Note 8) Limits (Note 8) OPERATIONAL AMPLIFIERS A V Open Loop R L =10kΩto GND, V + = 30V, V/mV Voltage Gain 5V V OUT 25V (Min) SR Slew Rate V + = 30V (Note 9) V/µs GBW Gain Bandwidth C L = 50 pf 0.8 MHz 0.5 MHz V O1 Output Voltage R L =10kΩto GND, V V V V (Min) Swing High V + = 36V (32V for LM613C) V V V V (Min) V O2 Output Voltage R L =10kΩto V +, V V V V (Max) Swing Low V + = 36V (32V for LM613C) V V V V (Max) I OUT Output Source Current V OUT = 2.5V, V + IN = 0V, ma (Min) V IN = 0.3V ma (Min) I SINK Output Sink Current V OUT = 1.6V, V + IN = 0V, ma (Min) V IN = 0.3V ma (Min) I SHORT Short Circuit Current V OUT = 0V,V + IN = 3V, ma (Max) V IN =2V ma (Max) V OUT = 5V, V + IN = 2V, ma (Max) V IN =3V ma (Max) COMPARATORS V OS Offset Voltage 4V V + 36V (32V for LM613C), mv (Max) R L =15kΩ mv (Max) Offset Voltage 0V V CM 36V mv (Max) over V CM V + = 36V, (32V for LM613C) mv (Max) Average Offset 15 µv/ C Voltage Drift (Max) I B Input Bias Current na (Max) na (Max) I OS Input Offset Current na (Max) na (Max) A V Voltage Gain R L =10kΩto 36V (32V for 500 V/mV LM613C) 2V V OUT 27V 100 V/mV t r Large Signal V + IN = 1.4V, V IN = TTL Swing, 1.5 µs Response Time R L = 5.1 kω 2.0 µs I SINK Output Sink Current V + IN = 0V, V IN = 1V, ma (Min) V OUT = 1.5V ma (Min) V OUT = 0.4V ma (Min) ma (Min) I LEAK Output Leakage V + IN = 1V, V IN = 0V, µa (Max) Current V OUT = 36V (32V for LM613C) 0.2 µa (Max) VOLTAGE REFERENCE V R Voltage Reference (Note 10) V (Min) LM

4 LM613 Electrical Characteristics (Continued) These specifications apply for V = GND = 0V, V + = 5V, V CM =V OUT = 2.5V, I R = 100 µa, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for T J = 25 C; limits in boldface type apply over the Operating Temperature Range. LM613AM LM613M Typical LM613AI LM613I Symbol Parameter Conditions (Note 7) Limits LM613C Units (Note 8) Limits (Note 8) VOLTAGE REFERENCE V (Max) (±0.6%) (±2%) Average Temp. Drift (Note 11) ppm/ C (Max) Hysteresis (Note 12) 3.2 µv/ C V R Change V R(100 µa) V R(17 µa) mv (Max) with Current mv (Max) V R(10 ma) V R(100 µa) mv (Max) (Note 13) mv (Max) R Resistance V R( ma) /9.9 ma Ω (Max) V R( µa) /83 µa Ω (Max) V R Change V R(Vro = Vr) V R(Vro = 6.3V) mv (Max) with High V RO (5.06V between Anode and mv (Max) FEEDBACK) V R Change with V R(V+ = 5V) V R(V+ = 36V) mv (Max) V ANODE Change (V + = 32V for LM613C) mv (Max) V R(V+ = 5V) V R(V+ = 3V) mv (Max) mv (Max) I FB FEEDBACK Bias V ANODE V FB 5.06V na (Max) Current na (Max) e n V R Noise 10 Hz to 10 khz, 30 µv RMS V RO =V R Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions. Note 2: Input voltage above V + is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output. Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below V, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined and unpredictable when any parasitic diode or transistor is conducting. Note 4: Simultaneous short-circuit of multiple comparators while using high supply voltages may force junction temperature above maximum, and thus should not be continuous. Note 5: Junction temperature may be calculated using T J =T A +P D θ JA. The given thermal resistance is worst-case for packages in sockets in still air. For packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ JA is 90 C/W for the N package, and 135 C/W for the WM package. Note 6: Human body model, 100 pf discharged through a 1.5 kω resistor. Note 7: Typical values in standard typeface are for T J = 25 C; values in bold face type apply for the full operating temperature range. These values represent the most likely parametric norm. Note 8: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face). Note 9: Slew rate is measured with the op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage transition is sampled at 10V 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V. Note 10: V R is the Cathode-to-feedback voltage, nominally 1.244V. Note 11: Average reference drift is calculated from the measurement of the reference voltage at 25 C and at the temperature extremes. The drift, in ppm/ C, is 10 6 V R /(V R[25 C] T J ), where V R is the lowest value subtracted from the highest, V R[25 C] is the value at 25 C, and T J is the temperature range. This parameter is guaranteed by design and sample testing. Note 12: Hysteresis is the change in V R caused by a change in T J, after the reference has been dehysterized. To dehysterize the reference; that is minimize the hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25 C: 25 C, 85 C, 40 C, 70 C, 0 C, 25 C. Note 13: Low contact resistance is required for accurate measurement. 4

5 Simplified Schematic Diagrams Op Amp LM613 DS Comparator DS Reference/Bias DS

6 LM613 Typical Performance Characteristics (Reference) T J = 25 C, FEEDBACK pin shorted to V = 0V, unless otherwise noted Reference Voltage vs Temp. Reference Voltage Drift DS DS Accelerated Reference Voltage Drift vs Time Reference Voltage vs Current and Temperature DS DS Reference Voltage vs Current and Temperature Reference Voltage vs Reference Current DS DS

7 Typical Performance Characteristics (Reference) T J = 25 C, FEEDBACK pin shorted to V = 0V, unless otherwise noted (Continued) LM613 Reference Voltage vs Reference Current Reference AC Stability Range DS DS FEEDBACK Current vs FEEDBACK-to-Anode Voltage FEEDBACK Current vs FEEDBACK-to-Anode Voltage DS DS Reference Noise Voltage vs Frequency Reference Small-Signal Resistance vs Frequency DS DS

8 LM613 Typical Performance Characteristics (Reference) T J = 25 C, FEEDBACK pin shorted to V = 0V, unless otherwise noted (Continued) Reference Power-Up Time Reference Voltage with FEEDBACK Voltage Step DS DS Reference Voltage with µa Current Step Reference Step Response for 100 µa 10 ma Current Step DS DS Reference Voltage Change with Supply Voltage Step Reference Change vs Common-Mode Voltage DS DS

9 Typical Performance Characteristics (Op Amps) V + =5V,V =GND=0V,V CM =V + /2, V OUT =V + /2, T J = 25 C, unless otherwise noted LM613 Input Common-Mode Voltage Range vs Temperature V OS vs Junction Temperature DS DS Input Bias Current vs Common-Mode Voltage Large-Signal Step Response DS DS Output Voltage Swing vs Temp. and Current Output Source Current vs Output Voltage and Temp. DS DS

10 LM613 Typical Performance Characteristics (Op Amps) V + = 5V, V = GND = 0V, V CM =V + /2, V OUT =V + /2, T J = 25 C, unless otherwise noted (Continued) Output Sink Current vs Output Voltage Output Swing, Large Signal DS DS Output Impedance vs Frequency and Gain Small Signal Pulse Response vs Temp. DS DS Small-Signal Pulse Response vs Load Op Amp Voltage Noise vs Frequency DS DS

11 Typical Performance Characteristics (Op Amps) V + = 5V, V = GND = 0V, V CM =V + /2, V OUT =V + /2, T J = 25 C, unless otherwise noted (Continued) LM613 Op Amp Current Noise vs Frequency Small-Signal Voltage Gain vs Frequency and Temperature DS DS Small-Signal Voltage Gain vs Frequency and Load Follower Small-Signal Frequency Response DS DS Common-Mode Input Voltage Rejection Ratio Power Supply Current vs Power Supply Voltage DS DS

12 LM613 Typical Performance Characteristics (Op Amps) V + = 5V, V = GND = 0V, V CM =V + /2, V OUT =V + /2, T J = 25 C, unless otherwise noted (Continued) Positive Power Supply Voltage Rejection Ratio Negative Power Supply Voltage Rejection Ratio DS DS Slew Rate vs Temperature Input Offset Current vs Junction Temperature DS DS Input Bias Current vs Junction Temperature DS

13 Typical Performance Characteristics (Comparators) Output Sink Current Input Bias Current vs Common-Mode Voltage LM613 DS DS Comparator Response Times Inverting Input, Positive Transition Comparator Response Times Inverting Input, Negative Transition DS DS Comparator Response Times Non-Inverting Input, Positive Transition Comparator Response Times Non-Inverting Input, Negative Transition DS DS

14 LM613 Typical Performance Characteristics (Comparators) (Continued) Comparator Response Times Inverting Input, Positive Transition Comparator Response Times Inverting Input, Negative Transition DS DS Comparator Response Times Non-Inverting Input, Positive Transition Comparator Response Times Non-Inverting Input, Negative Transition DS Typical Performance Distributions Average V OS Drift Military Temperature Range Average V OS Drift Industrial Temperature Range DS DS DS

15 Typical Performance Distributions (Continued) LM613 Average V OS Drift Commercial Temperature Range Average I OS Drift Military Temperature Range DS DS Average I OS Drift Industrial Temperature Range Op Amp Voltage Noise Distribution DS DS Average I OS Drift Commercial Temperature Range Op Amp Current Noise Distribution DS DS

16 LM613 Typical Performance Distributions (Continued) Voltage Reference Broad-Band Noise Distribution DS FIGURE 2. Reference Equivalent Circuit Application Information VOLTAGE REFERENCE DS Reference Biasing The voltage reference is of a shunt regulator topology that models as a simple zener diode. With current I r flowing in the forward direction there is the familiar diode transfer function. I r flowing in the reverse direction forces the reference voltage to be developed from cathode to anode. The cathode may swing from a diode drop below V to the reference voltage or to the avalanche voltage of the parallel protection diode, nominally 7V. A 6.3V reference with V + = 3V is allowed. DS FIGURE 1. Voltage Associated with Reference (current source I r is external) The reference equivalent circuit reveals how V r is held at the constant 1.2V by feedback, and how the FEEDBACK pin passes little current. To generate the required reverse current, typically a resistor is connected from a supply voltage higher than the reference voltage. Varying that voltage, and so varying I r, has small effect with the equivalent series resistance of less than an ohm at the higher currents. Alternatively, an active current source, such as the LM134 series, may generate I r. DS FIGURE V Reference Capacitors in parallel with the reference are allowed. See the Reference AC Stability Range typical curve for capacitance values from 20 µa to 3 ma any capacitor value is stable. With the reference s wide stability range with resistive and capacitive loads, a wide range of RC filter values will perform noise filtering. Adjustable Reference The FEEDBACK pin allows the reference output voltage, V ro, to vary from 1.24V to 6.3V. The reference attempts to hold V r at 1.24V. If V r is above 1.24V, the reference will conduct current from Cathode to Anode; FEEDBACK current always remains low. If FEEDBACK is connected to Anode, then V ro =V r = 1.24V. For higher voltages FEEDBACK is held at a constant voltage above Anode say 3.76V for V ro = 5V. Connecting a resistor across the constant V r generates a current I=R1/V r flowing from Cathode into FEEDBACK node. A Thevenin equivalent 3.76V is generated from FEED- BACK to Anode with R2=3.76/I. Keep I greater than one thousand times larger than FEEDBACK bias current for <0.1% error I 32 µa for the military grade over the military temperature range (I 5.5 µa for a 1% untrimmed error for a commercial part). DS FIGURE 4. Thevenin Equivalent of Reference with 5V Output 16

17 Application Information (Continued) LM613 DS R1 = Vr/I = 1.24/32µ = 39k R2 = R1 {(Vro/Vr) 1} = 39k {(5/1.24) 1)} = 118k FIGURE 5. Resistors R1 and R2 Program Reference Output Voltage to be 5V Understanding that V r is fixed and that voltage sources, resistors, and capacitors may be tied to the FEEDBACK pin, a range of V r temperature coefficients may be synthesized. DS FIGURE 8. Diode in Series with R1 Causes Voltage Across R1 and R2 to be Proportional to Absolute Temperature (PTAT) Connecting a resistor across Cathode-to-FEEDBACK creates a 0 TC current source, but a range of TCs may be synthesized. DS FIGURE 6. Output Voltage has Negative Temperature Coefficient (TC) if R2 has Negative TC DS I = Vr/R1 = 1.24/R1 FIGURE 9. Current Source is Programmed by R1 DS FIGURE 7. Output Voltage has Positive TC if R1 has Negative TC DS FIGURE 10. Proportional-to-Absolute-Temperature Current Source DS FIGURE 11. Negative-TC Current Source 17

18 LM613 Application Information (Continued) Reference Hysteresis The reference voltage depends, slightly, on the thermal history of the die. Competitive micro-power products vary always check the data sheet for any given device. Do not assume that no specification means no hysteresis. OPERATIONAL AMPLIFIERS AND COMPARATORS Any amp, comparator, or the reference may be biased in any way with no effect on the other sections of the LM613, except when a substrate diode conducts, see Electrical Characteristics (Note 1). For example, one amp input may be outside the common-mode range, another amp may be operating as a comparator, and all other sections may have all terminals floating with no effect on the others. Tying inverting input to output and non-inverting input to V on unused amps is preferred. Unused comparators should have non-inverting input and output tied to V +, and inverting input tied to V. Choosing operating points that cause oscillation, such as driving too large a capacitive load, is best avoided. Op Amp Output Stage These op amps, like the LM124 series, have flexible and relatively wide-swing output stages. There are simple rules to optimize output swing, reduce cross-over distortion, and optimize capacitive drive capability: 1. Output Swing: Unloaded, the 42 µa pull-down will bring the output within 300 mv of V over the military temperature range. If more than 42 µa is required, a resistor from output to V will help. Swing across any load may be improved slightly if the load can be tied to V +, at the cost of poorer sinking open-loop voltage gain. 2. Cross-Over Distortion: The LM613 has lower cross-over distortion (a 1 V BE deadband versus 3 V BE for the Typical Applications LM124), and increased slew rate as shown in the characteristic curves. A resistor pull-up or pull-down will force class-a operation with only the PNP or NPN output transistor conducting, eliminating cross-over distortion. 3. Capacitive Drive: Limited by the output pole caused by the output resistance driving capacitive loads, a pull-down resistor conducting 1 ma or more reduces the output stage NPN r e until the output resistance is that of the current limit 25Ω. 200 pf may then be driven without oscillation. Comparator Output Stage The comparators, like the LM139 series, have open-collector output stages. A pull-up resistor must be added from each output pin to a positive voltage for the output transistor to switch properly. When the output transistor is OFF, the output voltage will be this external positive voltage. For the output voltage to be under the TTL-low voltage threshold when the output transistor is ON, the output current must be less than 8 ma (over temperature). This impacts the minimum value of pull-up resistor. The offset voltage may increase when the output voltage is low and the output current is less than 30 µa. Thus, for best accuracy, the pull-up resistor value should be low enough to allow the output transistor to sink more than 30 µa. Op Amp and Comparator Input Stage The lateral PNP input transistors, unlike those of most op amps, have BV EBO equal to the absolute maximum supply voltage. Also, they have no diode clamps to the positive supply nor across the inputs. These features make the inputs look like high impedances to input sources producing large differential and common-mode voltages. DS FIGURE 12. High Current, High Voltage Switch 18

19 Typical Applications (Continued) LM613 DS FIGURE 13. High Speed Level Shifter. Response time is approximately 1.5 µs, where output is either approximately +V or V. *10k must be low t.c. trimpot DS FIGURE 14. Ultra Low Noise, 10.00V Reference. Total output noise is typically 14 µv RMS. 19

20 LM613 Typical Applications (Continued) DS FIGURE 15. Basic Comparator FIGURE 17. Wide-Input Range Comparator with TTL Output DS Ordering Information DS FIGURE 16. Basic Comparator with External Strobe DS FIGURE 18. Comparator with Hysteresis ( V H = + V(1k/1M)) Reference Tolerance & V OS Military 55 C T A +125 C Temperature Range Industrial 40 C T A +85 C Package NSC Drawing ±0.6% 80 ppm/ C Max. V OS 3.5 mv LM613AMJ/883 (Note 14) 16-Pin Ceramic DIP J16A ±2.0% 150 ppm/ C Max. V OS 5.0 mv Max. LM613IWM LM613IWMX 16-Pin Wide Surface Mount M16B Note 14: A military RETS 613AMX electrical test specification is available on request. The Military screened parts can also be procured as a Standard Military Drawing. 20

21 Physical Dimensions inches (millimeters) unless otherwise noted LM Lead Ceramic Dual-In-Line Package (J) Order Number LM613AMJ/883 NS Package Number J16A 16-Lead Small Outline Package (WM) Order Number LM613IWM or LM613IWMX NS Package Number M16B 21

22 LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference LIFE SUPPORT POLICY Notes NATIONAL S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation Americas Tel: Fax: support@nsc.com National Semiconductor Europe Fax: +49 (0) europe.support@nsc.com Deutsch Tel: +49 (0) English Tel: +44 (0) Français Tel: +33 (0) National Semiconductor Asia Pacific Customer Response Group Tel: Fax: ap.support@nsc.com National Semiconductor Japan Ltd. Tel: Fax: National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

LM613 Dual Operational Amplifiers Dual Comparators and Adjustable Reference

LM613 Dual Operational Amplifiers Dual Comparators and Adjustable Reference General Description The LM613 consists of dual op-amps dual comparators and a programmable voltage reference in a 16-pin package