CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. Order Nos. and Classification table is on sheet 2.

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1 Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY17 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For application class I IV at mains voltage 3 V For application class I III at mains voltage 6 V according to VDE 884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor system interface, line receiver. These couplers perform safety functions according to the following equipment standards: VDE 884 Optocoupler providing protective separation VDE 84 Telecommunication apparatus and data processing VDE 85/IEC 95/EN 695 Office machines (applied for reinforced isolation for mains voltages 4 V RMS ) VDE 86/lEC 65 Safety for mains operated electronic and related household apparatus 1 (12)

2 Features Approvals: BSI: BS EN 43, BS EN 665 (BS 415) BS EN 695 (BS 72) Certificate number 781 and 742 FIMKO (SETI): EN 695 Certificate number 414 Underwriters Laboratory (UL) 1577 recognized-file No. E VDE 884 Certificate number VDE 884 related features: Rated impulse voltage (transient overvoltage) V IOTM = 6 kv peak Isolation test voltage (partial discharge test voltage) V pd = 1.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Creepage current resistance according to VDE 33/IEC 112 Comparative Tracking Index: CTI = 275 Thickness through insulation.75 mm General features: CTR offered in 3 groups Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE 11 part 1 resp. IEC 664) Climatic classification 55//21 (IEC 68 part 1) Special construction: Therefore extra low coupling capacity typical.3 pf, high Common Mode Rejection Low temperature coefficient of CTR Coupling System A Order Schematic Part Numbers CTR-Ranking CNY17-1/ CNY17G-1 4 8% CNY17-2/ CNY17G % CNY17-3/ CNY17G-3 2% Suffix: G = Leadform 1.16 mm Pin Connection B C E A (+) C ( ) nc (12)

3 Absolute Maximum Ratings Input (Emitter) CNY17 Series Parameters Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current I F 6 ma Forward surge current t p 1 s I FSM 3 A Power dissipation T amb 25 C P tot mw Junction temperature T j 125 C Output (Detector) Parameters Test Conditions Symbol Value Unit Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM ma Power dissipation T amb 25 C P tot 15 mw Junction temperature T j 125 C Coupler Parameters Test Conditions Symbol Value Unit Isolation test voltage (RMS) V IO 3.75 kv Total power dissipation T amb 25 C P tot 25 mw Ambient temperature range T amb 55 to + C Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 3 (12)

4 Maximum Safety Ratings 1) (according to VDE 884) Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current I si 13 ma Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation T amb 25 C P si 265 mw Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 6 kv Safety temperature T si 15 C 1) This device is used for protective separation against electrical shock only within the maximum ratings. This must be ensured by using protective circuits in the applications. Derating Diagram Phototransistor Psi ( mw ) 5 IR-Diode Isi ( ma ) T amb ( C ) 15 4 (12)

5 Electrical Characteristics T amb = 25 C Input (Emitter) Parameters Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F V Junction capacitance V R =, f = 1 MHz C j 5 pf Output (Detector) Parameters Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 32 V Emitter collector voltage I E = A V ECO 7 V Collector emitter cut-off current V CE = 2 V, I f = I CEO 1 2 na Coupler Parameters Test Conditions Symbol Min. Typ. Max. Unit AC isolation test voltage f = 5 Hz, t = 1 s V IO 3.75 V (RMS) Collector/emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = 1 ma, f c 11 khz R L = Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameters Test Conditions Type Symbol Min. Typ. Max. Unit I C /I F V CE = 5 V, I F = 1 ma CNY17-1 CTR.4.8 I C /I F V CE = 5 V, I F = 1 ma CNY17-2 CTR I C /I F V CE = 5 V, I F = 1 ma CNY17-3 CTR I C /I F V CE = 5 V, I F = 1 ma CNY17-1 CTR.13 I C /I F V CE = 5 V, I F = 1 ma CNY17-2 CTR.22 I C /I F V CE = 5 V, I F = 1 ma CNY17-3 CTR.34 5 (12)

6 Switching Characteristics (Typical Values) V S = 5 V R L = (see figure 2) R L = 1 k (see figure 3) Type t d [s] t r [s] t on [s] t s [s] t f [s] t off [s] I C [ma] t on [s] t off [s] I F [ma] CNY17-1 to R G = 5 I F IF + 5 V IC = 5 ma; Adjusted through input amplitude t p T =.1 t p = 5 ms Channel I Oscilloscope Channel II R L 1 M 5 C L 2 pf Figure 1. Test circuit, non-saturated operation I F I F = 1 ma + 5 V I C R G = 5 t p T =.1 t p = 5 s Channel I Oscilloscope Channel II R L 1 M 5 1 k C L 2 pf Figure 2. Test circuit, saturated operation 6 (12)

7 Insulation Rated Parameters (according to VDE 884) CNY17 Series Parameters Test Conditions Symbol Min. Typ. Max. Unit Routine test %, t test = 1 s V pd 1.6 kv Partial discharge Lot test t Tr = 1 s, V IOTM 6 kv test voltage (sample test) t test =6s (see figure 3) V pd 1.3 kv V IO = 5 V R IO 1 12 V IO = 5 V, R IO 1 11 Insulation resistance T amb = 15 C T amb = C V IO = 5 V, R IO 1 9 (construction test only) V IOTM V t 1, t 2 = 1 to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s V Pd V IOWM V IORM t Tr = 6 s t 3 t test t 4 t 1 t 2 t stres t 1393 Figure 3. Test pulse diagram for sample test according to DIN VDE (12)

8 Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) 3 Coupled device 25 2 Phototransistor 15 IR-diode T amb Ambient Temperature ( C ) I CEO Collector Dark Current, with open Base ( na ) V CE =2V I F = T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature Figure 7. Collector Dark Current vs. Ambient Temperature. 1 I F Forward Current ( ma ) I CB Collector Base Current ( ma ).1.1 V S =5V V F Forward Voltage ( V ) I F Forward Current ( ma ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Base Current vs. Forward Current CTR rel Relative Current Transfer Ratio V CE =5V I F =1mA T amb Ambient Temperature ( C ) I C Collector Current ( ma ) V CE =5V I F Forward Current ( ma ) Figure 6. Rel. Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Forward Current 8 (12)

9 Typical Characteristics (T amb = 25 C, unless otherwise specified) CNY17 Series I C Collector Current ( ma ) 1 1 I F =5mA 2mA 1mA 5mA 2mA 1mA CTR Current Transfer Ratio ( % ) 1 V CE =5V V CE Collector Emitter Voltage ( V ) I F Forward Current ( ma ) Figure 1. Collector Current vs. Collector Emitter Voltage Figure 13. Current Transfer Ratio vs. Forward Current V CEsat Collector Emitter Saturation Voltage ( V ) % 1 1 CTR=5% 2% t on / t off Turn on / Turn off Time ( s ) Saturated Operation V S =5V R L =1k t off t on I C Collector Current ( ma ) I F Forward Current ( ma ) Figure 11. Collector Emitter Sat. Voltage vs. Collector Current Figure 14. Turn on / off Time vs. Forward Current h FE DC Current Gain V CE =5V t on / t off Turn on / Turn off Time ( s ) t on t off Non Saturated Operation V S =5V R L = I C Collector Current ( ma ) I C Collector Current ( ma ) Figure 12. DC Current Gain vs. Collector Current Figure 15. Turn on / off Time vs. Collector Current 9 (12)

10 Dimensions in mm Leadform mm (G-type) weight: ca..5 g creeping distance: 8 mm air path: 8 mm after mounting on PC board 1 (12)

11 Dimensions in mm 1477 weight: creeping distance: air path:.5 g 6 mm 6 mm after mounting on PC board 11 (12)

12 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 () , Fax number: 49 () (12)

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. TELEFUNKEN Semiconductors

CNY17 Series. Optocoupler with Phototransistor Output. Description. Applications. TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors CNY17 Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY17 Series consist of a phototransistor optically coupled