Imaging at High Spatial Resolution: Soft X-Ray Microscopy and EUV Lithography
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1 Imaging at High Spatial Resolution: Soft X-Ray Microscopy and EUV Lithography David Attwood University of California, Berkeley and Center for X-Ray Optics, LBNL W. Chao, E. Anderson, A. Liddle, P. Naulleau, C. Chang (Drexel), Y. Liu, E. Gullikson, A. Sakdinawat, D. Olynick, B. Harteneck, G. Denbeaux (Albany), G. Schneider (BESSY), C. Larabell (UCSF), M. LeGros, P. Fischer (Max Planck), T. Tyliszczak 1
2 The Short Wavelength Region of the Electromagnetic Spectrum 2
3 Two Common Soft X-Ray Microscopes 3
4 Zone Plates for Soft X-Ray Image Formation 4
5 Partially Coherent Illumination Permits Improved Spatial Resolution by a Factor Approaching Two σ = sinθ illum sinθ 5
6 Optical Transfer Properties with Varying Degrees of Partially Coherent Illumination 6
7 A Fresnel Zone Plate Lens Used for X-Ray Microscopy Courtesy of E. Anderson (LBNL) 7
8 The Nanowriter: High Resolution Electron Beam Writing With High Placement Accuracy Courtesy of E. Anderson (LBNL) 8
9 LBNL Nanowriter: Unique Ultra-High Resolution, High Accuracy Electron Beam Lithography Tool Courtesy of E. Anderson (LBNL) 9
10 Nanofabrication is Critical for High Fidelity, High Aspect Ratio Zone Plates 1. Expose HSQ resist 2. Develop Cross-linked polymer Si 3 N 4 Etch resistant plating base Cross-linked polym er Si 3 N 4 Si Si 3. Cryogenic ICP Etch 4. Plate Si 3 N 4 Si 3 N 4 Si Si 5. Strip Resist 6. Strip Si 3 N 4 and Cr/Au Plating Base Si 3 N 4 Si Si Courtesy of E. Anderson, A. Liddle, W. Chao, D. Olynick, and B. Harteneck (LBNL) 10
11 Spectromicroscopy: High Spatial and High Spectral Resolution Studies of Surface and Thin Films Courtesy of Tolek Tyliszczak (Dec. 2003) 11
12 Biofilm from Saskatoon River RES ULTS Ni, Fe, M n, Ca, K, O, C elemental map, (there was no sign of Cr.) Different oxidation states for Fe and Ni OD Fe 2p µm Protein (gray), Ca, K µm Different oxidation states (minerals) found for Fe & Ni Tohru Araki, Adam Hitchcock (McMaster University) Tolek Tyliszczak, LBNL Sample from: John Lawrence, George Swerhone (NWRI- Saskatoon), Gary Leppard (NWRI-CCIW) 12
13 Beamline Layout for a High Spatial Resolution, High Spectral Resolution, Full Field Microscope 13
14 Power Curves for the Stanford EPU 14
15 Photon Flux Curves for the Stanford EPU 15
16 A Novel Illuminator is Required Scanning optics modify phase space, transforming elliptical spatial distribution to circular, and increasing the angular illumination to provide the desired degree of partial coherence. Based on experience with EUV lithographic imaging at ALS Beamline 12.0, P. Naulleau and P. Denham (CXRO), SRI-2003, p P. Naulleau et al., Optics Commun. 234, 53 (2004) P. Naulleau et al., Appl. Optics 42, 820 (2004) 16
17 Exposure Time for a Full Field, High Spatial and High Spatial Resolution, Soft X-Ray Microscope on an EPU at Stanford Photon flux in central radiation cone / 6.43E+16 #/sec at 500 ev (λ = 2.5 nm, λ/δλ = 78) Spectral filter to λ/δλ = 3,000 / E+15 Beamline efficiency (0.84%) (7 mirrors plus 1 10%) / 1.45E+13 CONDENSER type ZP D=10mm,!r=30nm) collection NA rad collection solid angle 8.26E-03 sr magnification 5 illumination NA rad illumination solid angle sr sigma 6.70E-01 KZP collection percetage 100% collected flux 1.45E+13 #/sec at 2.5nm efficiency 10% post-condenser flux 1.45E+12 #/sec at 2.5nm SAMPLE illumination area (ellipse) 20 x 20 µm^2 sample size 10 x 10 µm^2 illumination efficiency 0.25 efficiency 50% flux after sample 1.81E+11 #/sec at 2.5nm 0.36 sec exposure time for full field microscope λ = 2.5 nm, λ/δλ = 3000 Spatial resolution ~20 nm MZP MZP D 63 µm MZP!r 20 nm MZP f 525 µm MZP NA 0.06 MZP efficiency 8% flux after MZP 1.45E+10 CCD CCD pixel size 12.5!m x 12.5!m CCD pixels (2048)^2 CCD dimension 1" x 1" CCD efficiency 80% total flux onto CCD 1.16E+10 #/sec at 2.5nm CCD counts per pixel per sec 2.77E+03 #/sec at 2.5nm exposure time (for 10^3 counts per pixel) 0.36 sec 17 C. Chang (Drexel), P. Naulleau, and D. Attwood
18 The XM-1 Soft X-Ray Microscope at the Advanced Light Source (ALS) 13 High spatial resolution (20 nm) Modest spectral resolution (E/ΔE ~700) Thick, hydrated samples (10 µm) Short exposure time (~1 second) Well engineered, pre-focused Mutually indexed visible and x-ray microscopes High throughput (hundreds of samples per day) Large image fields by tiling Easy access, user friendly Cryotomography E = kev λ = 0.7 nm - 5 nm 18
19 High Resolution Zone-Plate Microscope XM-1 at the ALS Well engineered Sample indexing Tiling for larger field of view Pre-focused High sample throughput Illumination important Phase contrast 19
20 Test Pattern for Nanometer Soft X-Ray Imaging Courtesy of E. Anderson, D. Olynick, B. Harteneck, E. Veklerov 20
21 Soft X-Ray Microscopy at the ALS: 20 nm Spatial Resolution W. Chao (UCB & LBNL) W. Chao et al., Opt. Lett. 28, 2019 (Nov 2003) E. Anderson (LBNL) 21
22 Multilayer Mirror Coatings Can Be Thinned and Used As Sub-20 nm Test Patterns SEM Micrograph of Cr/Si test pattern Δt Courtesy of W. Chao (UCB & CXRO/LBNL) High quality test patterns can be fabricated with sections as thin as 5 nm. 22
23 Near Diffraction Limited Soft X-Ray Microscopy: 20 nm Spatial Resolution at 2.07 nm Wavelength W. Chao et al., Opt. Lett. 28, 2019 (Nov 2003) 23
24 Near Diffraction Limited Soft X-Ray Microscopy: 20 nm Spatial Resolution at 2.07 nm Wavelength (barely resolved ) 15 nm lines not resolved, no modulation W. Chao et al., Opt. Lett. 28, 2019 (Nov 2003) 24
25 New Overlay Nanofabrication Technique for Narrower Outer Zones Δr = 15 nm Δt = 90 nm Overlay ~ 2 nm accuracy Courtesy of J.A. Liddle, E.H. Anderson, B. Harteneck and W. Chao, LBNL 25
26 New Results Using Overlay Nanofabrication: Outer Zone Width of 15 nm Zone plate lenses made using a new, e-beam based nanofabrication technique have extended outer zones from 25 nm to 15 nm. The new lenses work as expected, resolving fine patterns not seen previously Shorter depth of focus (λ/na 2 ) opens the opportunity for soft x-ray optical sectioning of biological material. New zone plate lens with 15 nm outer zone width Normalized Image Modulation !r MZP =25nm " =0.21 to 0.42 Calculated Measured!r MZP =15nm " =0.19 to 0.38 Calculated Measured Soft x-ray image of 15 nm Cr/Si lines & spaces 0.0 1/period (um -1 ) half-period (nm) Courtesy of W. Chao, A. Liddle, E. Anderson, and B. Harteneck (CXRO/LBNL) nm (Nature, in press)
27 Applications of Soft X-Ray Microscopy Magnetic Recording Materials Cryo Microscopy for the Life Sciences Cell border 100 nm lines & spaces Nucleoli Cell border 1 µm Nucleus Fe L ev FeTbCo Multilayer with AL Capping Layer Cryo X-Ray Microscopy of 3T3 Fibroblast Cells Protein Labeled Microtubule Network Courtesy of P. Fischer (Max Planck) and G. Denbeaux (CXRO/LBNL) Courtesy of C. Larabell (UCSF) and W. Meyer-Ilse (CXRO/LBNL) 27
28 The Water Window for Biological X-Ray Microscopy 28
29 Fast Freeze Cryo Fixation Strongly Mitigates Radiation Dose Effects Fast Freeze Helium passes through LN, is cooled, and directed onto sample windows Temperature (Celsius) ΔT Δt = 50 c 16 ms Time (milliseconds) W. Meyer-Ilse, G. Denbeaux, L. Johnson, A. Pearson (CXRO-LBNL) 29
30 Organelle Details Imaged with Cryogenic Preservation and High Spatial Resolution Cryo x-ray microscopy of 3T3 fibroblast cells ER? Filopodia Cell border Nucleoli Nucleus Cell border Cell border Nucleus Nucleoli C. Larabell, D. Yager, D. Hamamoto, M. Bissell, T. Shin (LBNL Life Sciences Division) W. Meyer-Ilse, G. Denbeaux, L. Johnson, A. Pearson (CXRO-LBNL) 30
31 Bending Magnet Radiation Used With a Soft X-Ray Microscope to Form a High Resolution Image of a Whole, Hydrated Mouse Epithelial Cell Courtesy of C. Larabell and W. Meyer-Ilse (LBNL) 31 hw = 520 ev 32 µm x 32 µm Ag enhanced Au labeling of the microtubule network, color coded blue. Cell nucleus and nucleoli, moderately absorbing, coded orange. Less absorbing aqueous regions coded black. W. Meyer-Ilse et al. J. Microsc. 201, 395 (2001)
32 Bio-Nanotomography for 3D Imaging of Cells Nanotomography of Cryogenic Fixed Cells Soft X-Ray Nanotomography of a Yeast Cell Courtesy of G. Schneider (BESSY) Surf. Rev. Lett. 9, 177 (2002) 32 λ = 2.5 nm Courtesy of C. Larabell (UCSF & LBNL) and M. LeGros (LBNL)
33 Bio-Nanotomography for 3D Imaging of Cells Nanotomography of Cryogenic Fixed Cells Soft X-Ray Nanotomography of a Yeast Cell C. Larabell and M. LeGros, Molec. Bio. Cell 15, 957 (2004) λ = 2.5 nm 33
34 Magnetic X-Ray Microscopy Using X-Ray Magnetic Circular Dichroism (XMCD) Magnetic X-Ray Microscopy High spatial resolution in transmission Bulk sensitive (thin films) Complements surface sensitive PEEM Good elemental sensitivity Good spin-orbit sensitivity Allows applied magnetic field Insensitive to capping layers In-plane and out-of-plane measurements 100 nm lines & spaces 1 µm Courtesy of P. Fischer, (MPI, Stuttgart) and G. Denbeaux (CXRO/LBNL) 34
35 Magnetic Domains Imaged at Different Photons Energies 1 µm FeGd Multilayer Contrast reversal hω = 704 ev below Fe L-edges hω = ev Fe L 3 -edge hω = ev Fe L 2 -edge P. Fischer, T. Eimueller, M. Koehler (U. Wuerzberg) S. Tsunashima (U. Nagoya) and N. Tagaki (Sanyo) G. Denbeaux, L. Johnson, A. Pearson (CXRO-LBNL) 35
36 Imaging of Ultrafast Spin Dynamics with Magnetic Soft X-Ray Transmission Microscopy Microcoil P. Fischer et al., MPI-MF, Stuttgart, Germany (now LBNL) stroboscopic pump-and-probe technique at variable delay times (Δt) high lateral resolution (<20nm) provided by Fresnel zone plates high temporal resolution given by SR pulse width (<100ps) inherent chemical sensitivity provided by XMCD magnetic contrast 4µm experiment Sample: 4x4µm 2 PY element Δt = +400ps Δt = +500ps Δt = +600ps Δt = +800ps micromagnetic simulations (OOMMF) 36
37 Electromigration in Latest Technology Computer Chips with Cu vias Connecting Multilevel Metallization Layers SEM micrograph X-ray micrograph imaged at 1.8 kev Cu interconnect X-rays Cu via HVTEM (0.8 MeV electrons) TXM (1.8 kev photons) Wafer 1 µm High current density Courtesy of Gerd Schneider (BESSY) G. Denbeaux, E. Anderson, A. Pearson and B. Bates (CXRO) M. M eyer and E. Zschech (AM D Saxony M anufacturing GmbH) / E. Stach (NCEM / LBNL) 37
38 Extreme Ultraviolet (EUV) Lithography Based on Multilayer Coated Optics 38
39 High Reflectivity, Thermally and Environmentally Robust Multilayers Coatings for High Throughput EUV Lithography 39
40 Reflective Mask for EUV Lithography Attribute TaN Cr Comments CD control TaN has smaller RIE CD bias Cleaning Both resistant to standard cleans Emissivity Inspection contrast TaN has higher contrast Repair selectivity Both need small improvement Aspect ratio TaN can be 8 nm thinner than Cr Cr (30nm) SiON (100nm) Mo/S ML 40
41 The Engineering Test Stand (ETS): A Pre-Manufacturing EUV Stepper Mask stage Projection optics Wafer stage Collection optic EUV Plasma source Condenser optics 41
42 The Engineering Test Stand (ETS) Courtesy of Bill Replogle, Sandia National Laboratories 42
43 EUV Lithography Will Use a Step and Scan Ring Field System 43
44 ETS Optics Meet Tight Specifications Condenser optic Projection optic Courtesy of D. Sweeney (LLNL) 44
45 High Reflectivity, Thermally and Environmentally Robust Multilayer Coatings for High Throughput EUV Lithography 45
46 DC Magnetron Sputtering Is Used to Deposit Multilayer Coatings Onto Optical Substrates Spinner motor assembly Vacuum chamber Substrate Substrate platter Mo Magnetron sources Si Substrates mounted on a rotating platter are swept across each sputter source sequentially to form the multilayer. Modulating the platter velocity provides precision control of radial thickness distribution and absolute film thickness. The substrate is also spun fast about its own axis for azimuthal uniformity. 46
47 Multilayer Reflectivity and Uniformity Courtesy of E. Gullikson and J. Underwood, Lawrence Berkeley National Laboratory. 47
48 High Accuracy EUV Metrology for Multilayer Coated Optics Multilayer Reflectivity and Uniformity Wavelength accuracy to 10 4 Reflectivity to 10 3 EUV scattering to 10 9 Courtesy of E. Gullikson and J. Underwood (LBNL) 48
49 Multilayer Coatings for the ETS Projection Optics Approach Production Specifications 49
50 ETS Mirror M3 Was Successfully Coated While Preserving the Surface Figure uniform direction graded direction 51 mm Uniform direction Graded direction 50
51 Figure and Finish Low, Mid, and High Spatial Frequency Variations from the Perfect Optical Surface 51
52 Spatially Coherent Radiation for At-Wavelength EUV Interferometry λ = 11.2 nm λ = 13.4 nm 1 µm D pinhole 25 mm wide CCD at 410 mm 52
53 At-Wavelength EUV Interferometry Wavefront Accuracy to λ euv /300 EUV Interferometry of ETS Optics K-B pre-focusing mirrors Turning mirror From undulator beamline Object stage Pinhole array 13.4 nm Grating stage 0.25 nm Planar Bearing stage 0.25 nm Null test interferogram Reference wavefront σ = nm rms = λ euv / Image stage Pinhole array Courtesy of K. Goldberg, P. Naulleau and P. Batson (LBNL) and J. Bokor (UCB/LLNL) EUV CCD
54 EUV Interferometry of the ETS Projection Optics From undulator beamline Object and image plane pinhole stages rotate with the projection optics to cover the field of view. K-B pre-focusing mirrors Object stage pinhole array Planar Bearing stage Turning mirror Grating beam splitter And phase shifter Spatially coherent EUV radiation Image stage pinhole array 54 EUV CCD Courtesy of K. Goldberg, P. Naulleau and P. Batson (LBNL) and J. Bokor (UCB/LLNL)
55 EUV Lithography at the Advanced Light Source in Berkeley Courtesy of P. Naulleau, S. Rekawa, and E. Anderson (LBNL) 55
56 At-Wavelength Interferometry of ETS Set 2 Optics Quantitative agreement with visible light interferometry to 0.25 nm rms Best field points chosen for static imaging Courtesy of K. Goldberg, P. Naulleau, J. Bokor, et al. (LBNL) 56
57 EUV-Wavelength Aberration Breakdown for the ETS Set-2 Optics 57
58 Visible and EUV Wavefront Comparison by the Numbers Courtesy of K. Goldberg (LBNL) 58
59 EUV Static Exposures Demonstrated to 39 nm Linewidth 39 nm Isolated Line ETS Set 2 optics Static images at ALS 13.5 nm σ = 0.7 DOF = ± 1/2 µm EUV 2D resist, 120 nm thick 6.2 mj/cm 2, 4-6 nm LER Coded as 80 nm (1:1) narrowed by exposure bias (x1.4) Courtesy of P. Naulleau (LBNL) 59
60 A 0.30 NA Micro-Exposure Tool (MET) has been Fabricated by Zeiss and LLNL Mask Illumination Fold Flat Button Secondary Bipod MET NA = nm 5X 200 X 600 µm field Primary Wafer Bipods Courtesy of J. Taylor (LLNL) 60
61 25 nm Pinhole Fabrication SiN Cr 5nm/Au 12 nm Plating Base HSQ Resist Expose & develop HSQ Ni Plate HSQ strip in HF Dry Etch SiN 300 nm SEM of coded 50 nm pinhole with HSQ mold inside TEM of coded 25 nm pinholes on 500 nm pitch 50 nm 50 nm Courtesy of J. Alex Liddle, Deirdre Olynick and Erik Anderson (LBNL) 61
62 Measured Pinhole Performance nm 25 nm 25 nm Airy 25 nm Pinholes nm Airy 25 nm NA = nm Airy Pinholes show a consistent 5 nm bias Aspect ratio of pinholes is limited by mechanical stability of resist 20 nm coded pinholes produce almost 50% diffracted power at an NA of nm Pinholes 35 nm Pinholes 40 nm Pinholes Angle (deg) 35 nm Airy 40 nm Airy 45 nm Airy 30 nm 35 nm 40 nm 50 nm 35 nm Airy 40 nm Airy 45 nm Airy 50 nm Pinholes 55 nm 55 nm Airy Angle (deg) Angle (deg) Angle (deg) Angle (deg) Courtesy of E. Gullikson, K. Goldberg, J.A. Liddle, D. Olynick, E. Anderson, (LBNL) 62
63 MET At-Wavelength Interferometry and Alignment Preparation for Static Microfield Imaging 2 mirrors 0.3 NA, 5x 13.5 nm 200 x 600 µm field of view MET Micro-Exposure Tool Visible-light alignment at Livermore EUV interferometry at Berkeley includes PS/PDI and shearing at 9 points across the field of view and in z. Higher-order spherical aberration dominates the wavefront A large part of the higher-order spherical is contained in Z35 and Z36. Higher-order spherical magnitude depends strongly on NA. Courtesy of K. Goldberg and P. Naulleau (LBNL) 63 Alignment in progress September 3, 2003 central field point astig coma sph ab trifoil h-o s. 0.1 nm 0.3 nm 0.4 nm 0.2 nm 0.4 nm RMS 0.8 nm λ/17 aberrations may be reduced in final alignment
64 Rohm and Haas MET 1K Resist Shows nm Resolution Improvement Over EUV 2D 90 nm 80 nm 70 nm 60 nm 50 nm 45 nm 40 nm 35 nm Processing Conditions: Thickness 125-nm PEB 130 C 90 Sec Develop 45 Sec E size 50-nm 21 mj/cm 2 Courtesy of P. Naulleau (LBNL), R. Brainard & T. Koehler (Rohm & Haas) S PIE Microlithography 64 March, 2005,
65 MET 1K Resist Shows Modulation Down to the 25-nm Level 45 nm 35 nm 28 nm 1.8 µm 30 nm 25 nm 65 Monopole Courtesy of Patrick Naulleau (LBNL) S PIE Microlithography March, 2005,
66 MS-13 tool chamber subsystem testing Courtesy of Malcolm 66Gower (Oxford, UK)
67 Intel EUV MET Installation 16 crates 17+ tons 15 pumps All for.... Jeanette Roberts SPIE 67 March 1, 2005
68 0.3 NA 0.55/0.36 σ 8 mj/cm 2 Imaging Performance 45 nm 1/2 pitch 160 nm DOF 30 nm isolated line 90 nm thick 80 nm DOF 30 nm isolated line Jeanette Roberts SPIE 68 March 1, 2005
69 MS-13 EUV Microstepper - at SEMATECH North, Albany, New York, USA Courtesy of Malcolm 69 Gower, Oxford, UK
70 International Technology Roadmap for Semiconductors* 70
71 EUV Source Candidates for Clean, Collectable nm Wavelength Radiation Laser Produced Plasma Source Electrical Discharge Plasma Source Capillary High voltage Xe (1 Torr) Hot, EUV emitting plasma Rear electrode Front electrode EUV Courtesy of Neil Fornaciari and Glenn Kubiak (Sandia) 71
72 Critical Issues for EUV 120W compact EUV Source EUV source debris mitigation Sensitive (5m/cm 2 ) EUV resist with 15 nm resolution and low LER Defect free mask Environmental controls 72
73 Lectures Available Over the Web Free UC Berkeley Webcast AST 210 / EECS 213 (offered Fall 2005, starts Aug. 30, 2 pm PDT, live over internet plus archived) 73
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