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2 35mW SURFACE MOUNT ENER DIODE Features Planar Die Construction 35mW Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Lead Free/RoHS Compliant (Note 2) Mechanical Data Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2D Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-22, Method 28 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Electrical Characteristics Table and Page 4 Ordering Information: See Page 4 Weight:.8 grams (approximate) K J A TOP VIEW G H D F B C L M SOT-23 Dim Min Max A B C D F.45.6 G H J.13. K L M α 8 All Dimensions in mm Maximum A = 25 C unless otherwise specified Characteristic Symbol Value Unit Forward I F = ma V F.9 V Power Dissipation (Note 1) P D 35 mw Thermal Resistance, Junction to Ambient Air (Note 1) R θja 357 C/W Operating and Storage Temperature Range T J, T STG -65 to +15 C 1. Mounted on FR4 PC Board with recommended pad layout which can be found on our website at 2. No purposefully added lead. DS1811 Rev of 4
3 Electrical A = 25 C unless otherwise specified Type Number Type Code ener Voltage Range (Note 3) Maximum ener Impedance (Note 4) Maximum Reverse Leakage Current (Note 3) I T I T I I K T I =.25mA V R Nom (V) Min (V) Max (V) ma Ω μa V MMB5221B KC MMB5222B KC MMB5223B KC MMB5225B KC MMB5226B KG MMB5227B KG MMB5228B KG MMB5229B KG MMB523B KG5/8E MMB5231B KE MMB5232B KE MMB5233B KE MMB5234B KE MMB5235B KE MMB5236B KF1/8L MMB5237B KF MMB5238B KF MMB5239B KF MMB524B KF MMB5241B KH MMB5242B KH2/8S MMB5243B KH MMB5244B KH MMB5245B KH MMB5246B KJ MMB5248B KJ MMB525B KJ MMB5251B KK MMB5252B KK MMB5254B KK MMB5255B KK MMB5256B KM MMB5257B KM MMB5258B KM MMB5259B KM Short duration pulse test used to minimize self-heating effect. 4. f = 1KHz. DS1811 Rev of 4
4 .4 T = 25 C j P D, POWER DISSIPATION (W) C T, TOTAL CAPACITANCE (pf) V = 2V R V = 1V R 15 1 T A, AMBIENT TEMPERATURE ( C) Fig. 1 Power Dissipation vs Ambient Temperature V, NOMINAL ENER VOLTAGE (V) Fig. 2 Total Capacitance vs Nominal ener Voltage 5 R CURRENT (ma) I, ENE V, NOMINAL ENER VOLTAGE (V) Fig. 3 ener Voltage vs. ener Impedence V, ENER VOLTAGE (V) Fig. 4 ener Breakdown Characteristics 3 T = 25 C j 12 I, ENER CURRENT (ma) 2 Test current I Nominal ener Voltage V, ENER VOLTAGE (V) Fig. 5 ener Breakdown Characteristics DS1811 Rev of 4
5 Ordering Information (Note 5) Device Packaging Shipping (Type Number)-7-F* SOT-23 3/Tape & Reel * Add -7-F to the appropriate type number in Table, Page 2 example: 6.2V ener = MMB5234B-7-F. 5. For packaging details, go to our website at Marking Information XXX YM xxx = Product Type Marking Code (See Page 2) YM = Date Code Marking Y = Year (ex: N = 22) M = Month (ex: 9 = September) Date Code Key Year Code J K L M N P R S T U V W X Y Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS1811 Rev of 4
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. Lead-free A23C2V7 - A23C51 3mW DUAL SURFACE MOUNT ENER DIODE Features Dual
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More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. SMBJ5.(C)A - SMBJ17(C)A 6W SURFACE MOUNT TRANSIENT OLTAGE SUPPRESSOR Features
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MC24UV COMPLEMENTRY PIR ENHNCEMENT MOE MOSFET Product Summary evice V (BR)SS R S(ON) max Q 2V Q2-2V I max T = 25 C.5Ω @ V = 4.5V 3m.9Ω @ V =.8V 74m.Ω @ V = -4.5V -7m 2.Ω @ V = -.8V -46m escription and
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell
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DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
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N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS R DS(ON) Package 8V Description.Ω@V GS = V ITOAB (Type TH) I D T C = +5 C This new generation MOSFET features low on-resistance and fast switching,
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N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C 25mΩ @ V = 4.5V 6.8 29mΩ @ V = 2.5V 5.5 escription and pplications This MOSFET
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology
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650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
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SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 48 @ V GS = -10V -5.3-30 79 @ V GS = -4.5V -4.1 Features Advance Trench Process
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