RF Integrated Solutions
|
|
- Lora Rice
- 6 years ago
- Views:
Transcription
1 Power Matters. RF Integrated Solutions NEW Gallium Nitride (GaN) Amplifiers Low, Medium & High Power Amplifiers Surface Mount Amplifiers Limiting Amplifiers Equalizer Amplifiers Variable Amplifiers High Dynamic Amplifiers Multipliers Multi-Function Assemblies
2 Table of Contents Table of Contents Microsemi RFIS Facilities and Manufacturing 2-5 New Products 6-14 Product Line Overview
3 Manufacturing Microsemi: RF Integrated Solutions Overview Manufacturing & Quality Automated Assembly & Test Equipment
4 Manufacturing Automated Test Equipment Microsemi-RFIS Facilities and Manufacturing Test Services
5 Manufacturing Specialized Tests Phase Noise Measurement Tests -
6 Manufacturing Environmental Stress Screening Microsemi-RFIS Facilities and Manufacturing
7 New Products NEW P-1dB B B NEW min) P-1dB dBm^ NEW min) P-1dB SMP2 6
8 NEW min) New Products P1dB min) NEW New Microsemi-RFIS Products P-1dB nom) NEW P1dB NEW Pac % % % % % sales.support@microsemi.com 7
9 New Products -
10 New Products - New Microsemi-RFIS Products sales.support@microsemi.com
11 New Products - -
12 New Products - - New Microsemi-RFIS Products - sales.support@microsemi.com 11
13 New Products - - -
14 New Products New Microsemi-RFIS Products
15 New Products Integrated Microwave Assemblies - - -
16 Product Offering Microsemi RF Integrated Solutions Microsemi RF Integrated Solutions Product Offering
17 Model Frequency physically smaller systems by eliminating cable interconnects and Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline **Includes internal voltage regulator Products listed above without ** require regulated DC Supply 16
18 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline SMP SMP SMP SMP SMP2 sales.support@microsemi.com 17
19 outstanding performance when compared with alternate topologies implemented in octave or multi- Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline SPN SPN SPN
20 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
21 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
22 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
23 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
24 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline SP sales.support@microsemi.com
25 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline B
26 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
27 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
28 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
29 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
30 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
31 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline SP
32 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
33 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
34 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
35 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
36 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
37 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
38 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
39 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline B B B B B B B B BP BP BP BP BP
40 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline M M M M B B M APA B sales.support@microsemi.com
41 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline APA
42 topology circuitry that provides good input/output - Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
43 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
44 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
45 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
46 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline APA sales.support@microsemi.com
47 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
48 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
49 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline APA APA
50 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
51 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline APA SP
52 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
53 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
54 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline sales.support@microsemi.com
55 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline
56 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline B B sales.support@microsemi.com
57 Model Frequency Flatness Noise Figure P-1dB IP3 In/Out DC Current Outline APA
58 Particular attention is given to integrate all parasitic reactive components of active devices into the transmission lines that support them in order to offset Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline B B B B B B B B5 sales.support@microsemi.com
59 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current B B B B B B5 Outline
60 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline B B B B2 sales.support@microsemi.com
61 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline B B B B B B B B B B BP B BP BP BP B B B B B B B B B B B B B B B4
62 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current B B B Outline B M B B B B M B B B B B B M B B B B sales.support@microsemi.com 61
63 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline dB
64 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline APA APA APA mod M B B B B B sales.support@microsemi.com
65 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current B4 Outline B M M B B B B B B B B B B B B B B B B B4
66 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current B B B B B B B B B B M B B B3 Outline B B B B B B B B B B B B B B B B B B B B2 sales.support@microsemi.com
67 Model Freq. Flat. NF 16 2 P-1dB IP3 In/Out DC Current Outline 34 B M B B B SMH SP B B B B B B
68 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline B B B B B B B5 APA B B B B B B B B BP B B BP sales.support@microsemi.com 67
69 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline M B B APA APA
70 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline APA APA APA B B M B B B B M M B B B B B B B B B3 sales.support@microsemi.com
71 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline B modb B B B B M B B B B B B B B M B B B B B B B B
72 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current B B B B B B B B4 Outline B B B B B B B B B B B B B B5 APA APA APA B B4 sales.support@microsemi.com 71
73 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline B B B B
74 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current NA Outline NA NA sales.support@microsemi.com
75 Model Freq. Flat. NF P-1dB IP3 In/Out DC Current Outline
76 and discrete transistors to provide the lowest phase noise - - FEATURES: Model Freq. (GHz) (db) min Flatness (± db) max 100Hz offset 1KHz offset 10KHz offset 100KHz offset 1MHz offset NF (db) max P1dB (dbm) min (In/Out) nom DC Power (V/mA) nom sales.support@microsemi.com
77 Model Freq. (GHz) (db) min Flatness (± db) max 100Hz offset 1KHz offset 10KHz offset 100KHz offset 1MHz offset NF (db) max P1dB (dbm) min (In/Out) nom DC Power (V/mA) nom
78 Model Freq. (GHz) (db) min Flatness (± db) max 100Hz offset 1KHz offset 10KHz offset 100KHz offset 1MHz offset NF (db) max P1dB (dbm) min (In/Out) nom DC Power (V/mA) nom sales.support@microsemi.com 77
79 Model Freq. (GHz) (db) min Flatness (± db) max 100Hz offset 1KHz offset 10KHz offset 100KHz offset 1MHz offset NF (db) max P1dB (dbm) min (In/Out) nom DC Power (V/mA) nom
80 ness and signal suppression over a wide input power FEATURES: Model Frequency Input Power Power Noise Figure db in/out DC Current to Outline to to to to to B5 sales.support@microsemi.com
81 Model Frequency Input Power Power Noise Figure db in/out DC Current to Outline B to
82 Microsemi s integrated gain equalizers compensate for system gain The parabolic type presents low attenuation at the ends of the FEATURES: Positive sloped and Parabolic shaped Low noise/high power over the full band Model Frequency Slope Flatness Noise Figure P-1dB Input DC (ma (nom sales.support@microsemi.com
83 Model Frequency Slope Flatness Noise Figure P-1dB Input DC (ma (nom
84 Multipliers Microsemi s frequency multipliers scale up the operating specializes in multipliers with minimal noise degrada- Model Input Frequency Frequency (GHz) RF Power In (dbm) RF Power Out dbm (Psat) Harmonics (dbc) typ +12 to +15VDC (ma) Case SMA SMA SMA sales.support@microsemi.com
85 Model Input Frequency Frequency (GHz) RF Power In (dbm) RF Power Out dbm (Psat) Harmonics (dbc) typ +12 to +15VDC (ma) Case
86 Model Input Frequency Frequency (GHz) RF Power In (dbm) RF Power Out dbm (Psat) Harmonics (dbc) typ +12 to +15VDC (ma) Case sales.support@microsemi.com
87 FEATURES: Analog or Digital Controlled Monotonic Response Low Noise Figure and High Power over the full range Model Freq. min Flatness NF P-1dB min OIP3 typ uation NF P-1dB min Input DC ma to to to to to to to to to to to to to to to to to to Notes:
88 Model Frequency Noise Figure P-1dB IP3 IP2 - - FEATURES: In/Out DC Current V g Outline BP sales.support@microsemi.com
89 Model Frequency Noise Figure P-1dB IP3 IP2 In/Out DC Current V g Outline BP BP BP
90 Model Frequency Noise Figure P-1dB IP3 IP2 In/Out DC Current V g Outline BP BP MHZ sales.support@microsemi.com
91 Internally matched GaAs devices are FEATURES: STANDARD OPTIONS: - - Power - Fan - Temperature compensation - and Phase Matching - Psat control - Hermetic Seal Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) (db) Vd (VDC) Id (A) Outline A
92 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) (db) Vd (VDC) Id (A) Outline A sales.support@microsemi.com
93 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) (db) Vd (VDC) Id (A) Outline A
94 Model Frequency (GHz) Psat (dbm) achieves the highest power and Features: Psat (W) P1dB (dbm) (db) STANDARD OPTIONS: - - Power - Fan - Temperature compensation - and Phase Matching - Psat control - Hermetic Seal Vd (VDC) Id (A) Outline A A A A A A A sales.support@microsemi.com
95 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) (db) Vd (VDC) Id (A) Outline
96 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) (db) Vd (VDC) Id (A) Outline sales.support@microsemi.com
97 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) (db) Vd (VDC) Id (A) Outline
98 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) (db) Vd (VDC) Id (A) Outline sales.support@microsemi.com
99 available in industry standard tions are instrumentation and Features: time STANDARD OPTIONS: - - Power - Fan - Temperature compensation - and Phase Matching - Psat control - Hermetic Seal Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) Pac (kw) Height (in)
100 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) Pac (kw) Height (in) sales.support@microsemi.com
101 Model Frequency (GHz) Psat (dbm) Psat (W) P1dB (dbm) Pac (kw) Height (in)
102 Microsemi s chip and wire die level implementation power density characteristics of GaN in small min) min) % % % % % % % % % % % % % % % % % % % % % % % % % % % sales.support@microsemi.com
103 Multi-Function Assemblies -
104 Multi-Function Assemblies
105 Multi-Function Assemblies IMA for Low Phase Noise Oscillator
106 Multi-Function Assemblies
107 Multi-Function Assemblies
108 Multi-Function Assemblies
109 Multi-Function Assemblies
110 Multi-Function Assemblies Quad Amp Receiver Front End
111 Multi-Function Assemblies
112 Multi-Function Assemblies 111
113 Standard Features Available Options Additional Functions Available
114 Compensates for device gain change over temperature. - Phase & Matching of sales.support@microsemi.com
115 Suppressing harmonics with an - RF Input Power Protection Protects against high levels of RF input power. - - Frequency Insertion Loss CW Power GHz db dbm (Watts) 1
116 A logical output level that signals the presence of RF energy Mute Switching chain Off sales.support@microsemi.com
117 116
118 - - sales.support@microsemi.com 117
119
120 Outline Drawings Microsemi Product Outlines In Alphabetical and Numerical Order Low Noise and Medium Power
121 Outline Drawings
122 Outline Drawings Outline Drawings
123 Outline Drawings
124 Outline Drawings Outline Drawings C5 - Outline sales.support@microsemi.com
125 Outline Drawings
126 Outline Drawings Outline Drawings
127 Outline Drawings
128 Outline Drawings Outline Drawings L5 - Outline sales.support@microsemi.com
129 Outline Drawings
130 Outline Drawings Outline Drawings
131 Outline Drawings
132 Outline Drawings Outline Drawings
133 Outline Drawings SCP5 - Outline
134 Outline Drawings Outline Drawings SLC - Outline sales.support@microsemi.com
135 Outline Drawings
136 Outline Drawings Outline Drawings SPC - Outline sales.support@microsemi.com
137 Outline Drawings
138 Outline Drawings Outline Drawings
139 Outline Drawings
140 Outline Drawings Outline Drawings
141 Outline Drawings
142 Outline Drawings Outline Drawings
143 Outline Drawings
144 Application Notes Application Notes Application Notes These application notes and more are available Phase Noise Application Note Understanding Phase Noise Guidelines For Effective Two-Tone Intermodulation Distortion Test Systems Intermodulation Distortion Cancellation Techniques: A Practical Review Advanced Techniques For Enhanced Two Tone Intermodulation Measurments sales.support@microsemi.com
Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -67 dbc/hz @ khz Noise Figure: 4.5 db Gain:
More informationFeatures. = +25 C, Vdc = +5V
amplifiers Typical Applications The HMC-C is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram v.7 HMC-C Features Ultra Low Phase Noise: -6 dbc/hz @ khz Noise Figure:
More informationFeatures. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain:
More informationFMAM1035 DATA SHEET. 6 db NF Low Phase Noise Amplifier Operating From 3 GHz to 8 GHz with 11 db Gain, 14 dbm P1dB and SMA. Features: Applications:
FMAM13 6 db NF Low Phase Noise Amplifier Operating From 3 GHz to 8 GHz with 11 db Gain, 14 dbm P1dB and SMA The FMAM13 is a low phase noise amplifier that operates across the frequency range from 3 GHz
More informationMMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier
MMA051PP45 Datasheet DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of
More informationFeatures. = +25 C, +Vdc = +6V, -Vdc = -5V
v3.7 WIDEBAND LNA MODULE, - 2 GHz amplifiers Typical Applications The Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Industrial Sensors Functional
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20
AMT-A0119 0.8 GHz to 3 GHz Broadband High Power Amplifier W P1dB Data Sheet Features 0.8 GHz to 3GHz Frequency Range Class AB, High Linearity Gain db min 55 db Typical Gain Flatness < ± 1.2 db Typical
More informationFMAM4032 DATA SHEET. 10 MHz to 6 GHz, Medium Power Broadband Amplifier with 900 mw, 24 db Gain and SMA. Features: Applications:
FMAM432 1 MHz to 6 GHz, Medium Power Broadband Amplifier with 9 mw, 24 db Gain and SMA FMAM432 two stage amplifier operates across a wide frequency range from 1 MHz to 6 GHz The design utilizes GaAs PHEMT
More informationFeatures. Gain Variation Over Temperature db/ C
HMC-C26 Features Typical Applications The HMC-C26 Wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Gain: 3 db
More informationRF and Microwave Technologies
RF and Microwave Technologies Mercury Systems RF and Microwave Components Group develops innovative technology solutions to solve complex customer challenges. We call it Innovation That Matters, and it
More informationKa Band Radar Transceiver
Ka Band Radar Transceiver Ka-Band Radar Transceiver with Integrated LO Source Homodyne System with Integrated TX & LO Multiplied VCO with Phase noise
More informationENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram
Typical Applications ENGDA00072 Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA00072 Features Military EW and SIGINT Receiver or Transmitter Telecom Infrastructure Space Hybrids Test and Measurement
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10
AMT-A0091 0.01 GHz to 6 GHz Broadband Low Noise Medium Power Amplifier Data Sheet Features 0.01 GHz to 6 GHz Frequency Range Typical Noise Figure < 1.2 db Typical Gain 45 db Gain Flatness < ± 1.2 db +20
More informationLinear High Power Amplifiers
PRODUCTS Linear High Power Amplifiers Aethercomm designs and manufactures high power class A and AB linear amplifiers to transmit voice, data and video for military systems, wireless customers and industrial
More informationDC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units
7-3 RF-LAMBDA DC-20 GHz Distributed Driver Amplifier Electrical Specifications, T A =25 Features Ultra wideband performance Positive gain slope High output power Low noise figure Microwave radio and VSAT
More informationUniversal/Standard Ku-band GaN 40W BUC MODEL No. NJT8371 series
< Features > * GaN Technology Amplifier Inside * RF Frequency Line-up Universal Ku-band: 13.75 to 14.5 GHz Standard Ku-band: 14.0 to 14.5 GHz * High Efficiency Output Power Saturation Output Power: +46.0
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20
AMT-A0142 1 GHz to 18 GHz Broadband Medium Power with Low Noise Amplifier Data Sheet Features 1 GHz to 18 GHz Frequency Range Typical P1dB power > +23 dbm Gain 18 db Typical Gain Flatness ± 1 db Typical
More informationFeatures. = +25 C, +Vdc = +6V, -Vdc = -5V
HMC-C59 v.59 WIDEBAND LNA MODULE, - 2 GHz Typical Applications The HMC-C59 Wideband LNA is ideal for: Telecom Infrastructure Features Noise Figure:.8 db @ 8 GHz High Gain: 6 db @ 8 GHz PdB Output Power:
More informationBroadband solid-state amplifier
Broadband solid-state amplifier Amplifier modules Amplifier instruments CETI provides multiple types of broadband solid-state amplifiers, such as low noise amplifiers, medium power driving amplifiers,
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +37
AMT-A0246 4 GHz to 8 GHz Broadband LNA with 5 W Protection Limiter Data Sheet Features 4 GHz to 8 GHz Frequency Range +37 dbm (5W) CW Pin survival Gain 28 db Typical Gain Flatness ± 0.6 db Typical 2.2
More information2 GHz to 6 GHz, 500 W Power Amplifier HMC8113
Data Sheet FEATURES 2 GHz to 6 GHz frequency range 85 db typical small signal gain 57 dbm typical saturated output power 61 db gain control range with 1 db LSB Standard 5U 19-inch rack chassis (per EIA-310D)
More informationFeatures. = +25 C, Vdc = +12V
Typical Applications The VCO Module is ideal for: Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM Lab Instrumentation Functional Diagram Electrical Specifications, T
More informationFeatures. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %
v5.1217 HMC187 2-2 GHz Typical Applications The HMC187 is ideal for: Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +39 dbm Power Gain at Psat: +5.5 db High Output
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Ultra Wide Band Low Noise Amplifier AC 1V/2V 0.0~ Electrical Specifications, T A =2 Parameters Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.01 1 1 3 GHz Gain 33 36 33 36 db Gain Flatness ±1. ±1.0
More informationParameter Min. Typ. Max. Min. Typ. Max. Units
25W Wide Band Power Amplifier 20-6000MHz Features Wideband Solid State Power Amplifier Psat: +45dBm Typical Gain: 50dB Typical Supply Voltage: +60V DC Electrical Specifications, T A =25 Parameter Min.
More informationMMA GHz, 0.1W Gain Block
Total Size: 172 x 76 Scribe Alley: 7 x 7 MMA-174321 Features: Frequency Range: 17 43 GHz P1dB: 21 dbm Psat: 22 dbm Gain: 22 db Vdd =5 V (3 V to 5 V) Ids = 2 ma (15mA to 3mA) Input and Output Fully Matched
More informationAH102. Product Description. Functional Diagram. Product Features. Typical Parameters. Specifications. Absolute Maximum Ratings. Ordering Information
Medium Power, High Linearity Amplifier The Communications Edge Product Features - MHz Bandwidth +45 dbm Output IP3 13 db Gain +27 dbm P1dB MTBF > 7 Hours Internally Matched Multiple Bias Voltages (+7.
More informationFeatures. = +25 C, Vdd =+28V, Idd = 850 ma [1]
v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Typical Applications The HMC86F is ideal for Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +38. dbm Power Gain at Psat:
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10
AMT-A0112 11 GHz to 18 GHz Broadband Low Noise Amplifier Data Sheet Features 11 GHz to 18 GHz Frequency Range Typical Noise Figure < 1.4 db Typical Gain 40 db Gain Flatness < ± 2 db +14 dbm P1dB Internally
More informationFeatures. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
More information12D05A L- & S-Band Solid State Power Amplifier
12D05A L- & S-Band Solid State Power Amplifier 35 Watts CW @ 1.7 GHz to 2.1 GHz 20 Watts CW @ 2.1 GHz to 2.4 GHz P/N: NW-PA-12D05A (Includes NW-PA-ACC-CB09MC interface cable) The NuPower 12D05A is a small,
More informationNuPower TM. 11B02A Mini Multi-Octave Power Amplifier. Features. Applications. Benefits. 10 Watt CW 200 MHz MHz P/N: NW-PA-11B02A
11B02A Mini Multi-Octave Power Amplifier 10 Watt CW - 2600 MHz P/N: NW-PA-11B02A (includes NW-PA-ACC-CB09ME interface cable) The NuWaves NuPower TM 11B02A is a highly efficient, miniature solid state power
More informationFeatures. = +25 C, Vs= +8V to +16V
v2.17 Typical Applications The Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features Electrical Specifications,
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +37
AMT-A0060 6 GHz to 18 GHz Broadband Low Noise Amplifier with 5W CW Limiter Data Sheet Features 6 GHz to 18 GHz Frequency Range Typical Noise Figure < 2.2 db Typical Gain 25 db Gain Flatness < ± 1.5 db
More information12B04A L- & S-Band Bidirectional Amplifier
NuPower Xtender TM 12B4A L- & S-Band Bidirectional Amplifier Watt CW 2. Watts Linear, % EVM @ 34 dbm 1. GHz - 2. GHz P/N: NW-BA-12B4A (includes NW-BA-ACC-CB9MA) The NuPower Xtender TM 12B4A is a small,
More informationMTPA Broadband Power Amplifier
MTPA20218343432 Broadband Power Amplifier 1.Product Description MTPA20218343432 is an air-cooled, broadband, solid state amplifier. This rack mount amplifier is based on Gan technology. It provides high
More information12B01A-09 S-Band Solid State Power Amplifier
12B1A-9 S-Band Solid State Power Amplifier Watt CW 2.5 Watts Linear, 5% EVM @ 34 dbm 2. GHz - 2.5 GHz P/N: NW-PA-12B1A-9 The NuPower 12B1A-9 is a small, highly efficient solid state power amplifier that
More information12B01A-D30 L- & S-Band Solid State Power Amplifier w/ 1 Watt Input Drive Level
12B01A-D30 L- & S-Band Solid State Power Amplifier w/ 1 Watt Input Drive Level 10 Watts (CW) 1.0-2.5 GHz P/N: NW-PA-12B01A-D30 (Replaces P/N: NW-SSPA-10W-1.0-2.5-D30) The NuPower 12B01A-D30 is a small,
More information12B01A L- & S-Band Solid State Power Amplifier
12B1A L- & S-Band Solid State Power Amplifier 1 Watt CW 2.5 Watts Linear, 5% EVM @ 34 dbm 1. GHz - 2.5 GHz P/N: NW-PA-12B1A (includes NW-PA-ACC-CB9MA interface cable) The NuPower 12B1A is a small, highly
More information8W Wide Band Power Amplifier 1GHz~22GHz
8W Wide Band Power Amplifier 1GHz~22GHz Features Wideband Solid State Power Amplifier Gain: 50 db Typical Psat: +39 dbm Supply Voltage: +36V Electrical Specifications, T A = +25⁰C Typical Applications
More information100W Power Amplifier 8GHz~11GHz
100W Power Amplifier 8GHz~11GHz High output power +50dBm Aerospace and military application X band radar High Peak to average handle capability All specifications can be modified upon request Parameter
More informationGaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
More informationC20R01 C-Band Solid State Power Amplifier
C20R01 C-Band Solid State Power Amplifier 20 Watts CW, 4.4 GHz - 4.9 GHz 2 Watts Linear, 4% EVM @ 33 dbm P/N: NW-PA-C-20-R01 (Includes NW-PA-ACC-CB09MC interface cable) The NuPower C20R01 is a small, highly
More information10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B
Data Sheet FEATURES Conversion loss: 8. db LO to RF Isolation: 37 db Input IP3: 2 dbm RoHS compliant, 2.9 mm 2.9 mm, 12-terminal LCC package APPLICATIONS Microwave and very small aperture terminal (VSAT)
More informationElisra MMIC Catalog MMIC Catalog
October 21 Elisra MMIC Catalog MMIC Catalog Unclassified 5 Bit DCA.518GHz 5 Bit DCA.518GHz DESCRIPTION Frequency Range Attenuation Range (simultaneous) LSB = 1 ; MSB = 16 Phase variation over all states
More informationMMA GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations
More information4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz
4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz Features Wideband Solid State Power Amplifier Gain: 40 db Typical Psat: +37 dbm Typical Noise Figure: 3dB Typical Supply Voltage: +24V (-NP) / +36V (-WP)
More informationUniversal/Standard Ku-band 8W BUC MODEL No. NJT8318 series
< Features > * High Temperature Operating Operation Guarantee Temperature Range: * Monitor & Control Line-up FSK Communication RS-232C Interface Serial < Line-Up > -40 to +75 C * RF Frequency Line-up Universal
More informationSLA SMA DATA SHEET
SLA-6-8-4-SMA 8 Gain Limiting Amplifier Operating From 2 GHz to 6 GHz with -61 to 1 Pin, 1 Psat and SMA The SLA-6-8-4-SMA is a 2 to 6 GHz high gain wide-band coaxial limiting amplifier. The model operates
More informationFeatures. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +23
AMT-A0016 50MHz to 500MHz Limiting Amplifier Data Sheet Features Limiting Amplifier provides Pout> +12 dbm even with Pin varying from 18 dbm to 0 dbm Small Signal Gain 33 db Phase Noise 150 db @ 1KHz offset
More informationRFM HSD MHz 350W Class A/AB High Performance Amplifier with High Speed Disable
Class A/AB 350W linear amplifier Fast output disable,
More informationDC to 45 GHz MMIC Amplifier
DC to 45 GHz MMIC Amplifier Features 22 dbm Psat (8.5V p-p) Dynamic Gain Control 10 db Gain Low Noise Figure (5 db) Flatness ± 1dB to 40 GHz >18 dbm Pout @ >7 db Gain @ 45 GHz Size: 1640 x 835 µm ECCN
More informationFeatures. = +25 C, Vdd = 5V
v3.117 HMC1LH5 Typical Applications The HMC1LH5 is a medium PA for: Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation Functional Diagram Features Gain: 5 db Saturated
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
100W Coaxial Microwave Power Amplifier 20MHz~520MHz Features Small signal open loop gain: 50dB Output power 100W typical Electrical Specifications, T A = +25 C Typical Applications Suitable for RFI, EMC
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Electrical Specifications, T A =25 Ultra Wide Band Low Noise Amplifier AC 110V/220V 0.01-20GHz Parameters Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.01 10 10 20 GHz Gain 28 30 26 28 db Gain
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20. DC Current A 1.6
AMT-A0030 2 GHz to 18 GHz 8W 41 db Gain Broadband High Power Amplifier Module Data Sheet Features 2 GHz to 18 GHz Frequency Range Typical Psat power > +39 dbm Gain 41 db High Efficiency Internally Regulated
More informationVaractor-Tuned Oscillators. Technical Data. VTO-8000 Series
Varactor-Tuned Oscillators Technical Data VTO-8000 Series Features 600 MHz to 10.5 GHz Coverage Fast Tuning +7 to +13 dbm Output Power ± 1.5 db Output Flatness Hermetic Thin-film Construction Description
More information10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
More informationUniversal/Standard Ku-band 8W BUC MODEL No. NJT8318 series
< Features > * High Temperature Operating Operation Guarantee Temperature Range: * RF Frequency Line-up Universal Ku-band: 13.75 to 14.5 GHz Standard Ku-band: 14.0 to 14.5 GHz * Monitor & Control Line-up
More information2-6 GHz Broadband 4-Watt Power Amplifiers. One Product. Multiple Solutions.
2-6 GHz Broadband 4-Watt Power Amplifiers One Product. Multiple Solutions. Spectrum Microwave There is a new microwave technology leader with a proven track record in military and commercial applications...
More information20W Solid State Power Amplifier 6-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 20W Solid State Power Amplifier 6-18GHz Electrical Specifications, TA = +25⁰C Vcc = +36V Features Psat: + 43.5dBm Gain: 51 db Supply Voltage: +36V 50 Ohm Matched Short Haul / High Capacity
More informationDC to 30GHz Broadband MMIC Low-Noise Amplifier
DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Low noise, ultra-flat gain 6-20GHz: 2.5dB NF, 18 ± 0.3dB gain Excellent 1.5-20GHz performance: Very flat gain (17 ± 0.6dB) High Psat at 20GHz (20dBm)
More information5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 5W Ultra Wide Band Power Amplifier 2-18GHz Features Wideband Solid State Power Amplifier Psat: + 37dBm Gain: 35 db Supply Voltage: +24V Electrical Specifications, T A = +25⁰C, Vcc = +24V
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Ultra Wide Band Low Noise Amplifier 0.01GHz~10GHz Electrical Specifications, TA = 25, Vcc = 12V Features Gain: 28dB Typical Noise Figure: 2.5dB Typical High P1dB: 15dBm Typical Supply Voltage: 12V Parameter
More informationUniversal/Standard Ku-band 16W BUC MODEL No. NJT8319 series
< Features > * High Temperature Operating Operation Guarantee Temperature Range: * RF Frequency Line-up Universal Ku-band: 13.75 to 14.5 GHz Standard Ku-band: 14.0 to 14.5 GHz * Monitor & Control Line-up
More informationADI 2006 RF Seminar. Chapter II RF/IF Components and Specifications for Receivers
ADI 2006 RF Seminar Chapter II RF/IF Components and Specifications for Receivers 1 RF/IF Components and Specifications for Receivers Fixed Gain and Variable Gain Amplifiers IQ Demodulators Analog-to-Digital
More informationCHA2194 RoHS COMPLIANT
RoHS COMPLIANT 3-GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 3GHz to GHz
More informationParameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20
AMT-A0011 100MHz to 2000MHz Ultra Flat Gain with High Linearity Amplifier Data Sheet Features Ultra Flat Gain < ± 0.15 db from 300 to 1400MHz Frequency Range Gain 15 db, BP filter provides for zero gain
More informationStandard C-band 10W BUC MODEL No. NJT5762 series
< Features > * High Efficiency & Low Distortion P1dB: +40 dbm min. over temperature IM3: -28 dbc @ Pout = +37 dbm Power Consumption: 69 W * Compact Size & Light Weight Weight: 3.2kg * AC Power Option *
More informationFMSN3902 DATA SHEET. USB Frequency Synthesizer PLL (Phase Locked Loop), Operating From 5 GHz to 10 GHz With SMA Output. Features: Applications:
USB Frequency Synthesizer PLL (Phase Locked Loop), Operating From 5 GHz to 10 GHz With SMA Output FMSN3902 is a Frequency Synthesizer Module that covers a wide frequency band from 5 GHz to 10 GHz with
More informationAmplifier Systems. Ultra Low Noise LNAs. Back to. C-band LNAs X-band LNAs Ku-band LNAs
R Back to Amplifier Systems Ultra Low Noise LNAs C-band LNAs X-band LNAs Ku-band LNAs 100 Davids Drive Hauppauge NY 11788 631-436-7400 Fax: 631-436-7431 www.miteq.com AMFW SATCOM AMPLIFIER SERIES ULTRA
More informationCUSTOM INTEGRATED ASSEMBLIES
17 CUSTOM INTEGRATED ASSEMBLIES CUSTOM INTEGRATED ASSEMBLIES Cougar offers full first-level integration capabilities, providing not just performance components but also full subsystem solutions to help
More informationINTRODUCTION STANDARD FEATURES. Option: High ambient temperature operation (up to 60 C) APPLICATION KU-BAND BOOSTER AMPLIFIER
KU-BAND BOOSTER AMPLIFIER Output Power 16 W to 50 W AWSB-K16; AWSB-K20; AWSB-K25; AWSB-K32; AWSB-K40; AWSB-K50 INTRODUCTION The AWSB-K series described in this section are Advantech s line of medium gain
More informationFeatures. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
More informationFeatures. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V
v2.418 Typical Applications The HMC797A is ideal for: Test Instrumentation Military & Space Fiber Optics Functional Diagram Features High P1dB Output Power: +29 dbm High Psat Output Power: +31 dbm High
More information30W Solid State High Power Amplifier 2-6 GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 30W Solid State High Power Amplifier 2-6 GHz Features Wideband Solid State Power Amplifier Psat: +45dBm Gain: 50dB Supply Voltage: +36V Electrical Specifications, T A = +25⁰C, Vcc = +36V
More informationGaAs MMIC Double Balanced Mixer. Description Package Green Status
GaAs MMIC Double Balanced Mixer MM1-0212SSM 1. Device Overview 1.1 General Description The MM1-0212SSM is a highly linear GaAs MMIC double balanced mixer. MM1-0212SSM is a low frequency, high linearity
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
50W Broadband High Power Amplifier Module 500 2500MHz Electrical Specifications, T A = +25⁰C, Vdd = +28V Features Ultra-broadband Amplifier Module Small and lightweight Supply Voltage: +28V Parameter Min.
More informationFeatures. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*
v.7 HMCLH AGC AMPLIFIER, - GHz Typical Applications The HMCLH is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C I Test Instrumentation Fiber Optics Functional Diagram Features
More informationThe X-Band HPA is two stage 9 ~ 10 GHz GaN MMIC power amplifier has a large signal gain of 15 db with a +45 dbm saturated output power
APA9D Features X-Band W High Amplifier 9 to GHz Frequency Range W Saturated Output db Small Signal 36% Typical Added Efficiency ChipDimensions2.8 3..1mm 3 V Supply voltage Description The X-Band HPA is
More informationPORTABLE WIDEBAND RF SIGNAL GENERATOR
DS Instruments -Key Features- 25 to 6000MHz Coverage Calibrated RF Power Output SG6000L R11 PORTABLE WIDEBAND RF SIGNAL GENERATOR 31 RF Output Step Attenuator 20 Vernier Range USB COM Interface Industry
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
More informationAdvanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC
: AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from
More informationVWA ACAA. Features. Description. Applications. Ordering information. Pin out and dimensions (4,5 X 4,1 X 0.10 mm) Functional Block Diagram
VWA-50036-ACAA 8 to 12 GHz 21 db 40 dbm High Power Amplifier MMIC Description Features The VWA-50036-ACAA is a 3 Stages analog High power MMIC amplifier operating in the frequency range 8 to 13 GHz. The
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
More informationFeatures. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm
v1.314 Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Telecom Infrastructure Military & Space Fiber optics Functional Diagram P1dB Output Power: +27 dbm Psat
More informationSPA SMA DATA SHEET
43 db Gain Medium Power High Gain Amplifier at 3 Watt P1dB Operating From 14.4 GHz to 15.4 GHz with 41 dbm IP3 and SMA SPA-154-43-03-SMA is a 3 Watt Ku Band high gain power coaxial amplifier operating
More informationGHz LOW NOISE AMPLIFIER WHM AE 1
.. GHz LOW NOISE AMPLIFIER WHM-AE WHM-AE LNA is a low noise figure, wideband, and high linearity SMT packaged amplifier. The amplifier offers typical noise figure of.9 db and output IP of. dbm at the frequency
More information8.5 GHz to 13.5 GHz, GaAs, MMIC, I/Q Mixer HMC521ALC4
11 7 8 9 FEATURES Downconverter, 8. GHz to 13. GHz Conversion loss: 9 db typical Image rejection: 27. dbc typical LO to RF isolation: 39 db typical Input IP3: 16 dbm typical Wide IF bandwidth: dc to 3.
More informationFrequency Divider, Divide by 2 Prescaler Module, 500 MHz to 18 GHz, Field Replaceable SMA
Features Divide by 2 Prescaler Wide Frequency Band GaAs HBT MMIC Technology Low Phase Noise -15 dbc/hz @ 1 khz offset Output Power -4 dbm Low Reverse Leakage Level 55 db typical Applications Electronic
More informationBROADBAND DROP AMPLIFIER
BDA BROADBAND DROP AMPLIFIER FEATURES 1 GHz Gallium Arsenide Technology 2.5 db Noise Figure Patented Auto-Seize P-Series F- Connector One, Two or Four Port Versions Two-Way Capable LED Power Verification
More informationFeatures. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]
Typical Applications Features The HMC196LP3E is suitable for: Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram High Output Power: 12 dbm Low Input Power Drive: -2 to
More informationFeatures. = +25 C, Vdd = +10V, Idd = 350mA
Typical Applications The is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: +28 dbm High : 14 db High Output IP3: +41 dbm Single Supply: +V @ 3 ma Ohm
More information6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B
FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input
More informationXP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.
2 3 4 5 6 7 8 16 15 14 13 12 11 10 Features Linear On-Chip Power Detector Output Power Adjust 25.0 db Small Signal Gain +27.0 dbm P1dB Compression Point +38.0 dbm OIP3 Lead-Free 7 mm 28-lead SMD Package
More information81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142
Data Sheet 8 GHz to 86 GHz, E-Band Power Amplifier With Power Detector FEATURES GENERAL DESCRIPTION Gain: db typical The is an integrated E-band gallium arsenide (GaAs), Output power for db compression
More informationHMC994A AMPLIFIERS - LINEAR & POWER - CHIP. GaAs phemt MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz. Features. Typical Applications
v3.218 HMC994A.5 WATT POWER AMPLIFIER, DC - 3 GHz Typical Applications The HMC994A is ideal for: Test Instrumentation Military & Space Fiber Optics Functional Diagram Features High P1dB Output Power: dbm
More informationGaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:
More informationINC. MICROWAVE. A Spectrum Control Business
DRO Selection Guide DIELECTRIC RESONATOR OSCILLATORS Model Number Frequency Free Running, Mechanically Tuned Mechanical Tuning BW (MHz) +10 MDR2100 2.5-6.0 +10 6.0-21.0 +20 Free Running, Mechanically Tuned,
More information