Electronic Costing & Technology Experts
|
|
- Andra Stokes
- 6 years ago
- Views:
Transcription
1 Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer Nantes France Phone : +33 (0) info@systemplus.fr April Version 1 written by Stéphane ELISABETH DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The quoted trademarks are property of their owners by SYSTEM PLUS CONSULTING, all rights reserved. 1
2 Glossary 1. Overview / Introduction 4 Executive Summary Reverse Costing Methodology 2. Company Profile 7 Maxim Integrated Profile 3. Physical Analysis 13 Samsung Galaxy S7 disassembly Synthesis of the Physical Analysis Package Package View, Dimensions & Opening Package Cross-Section LEDs Dies LEDs View & Dimensions RED LED Die Cross-Section RED LED Process Charcateristic IR LED Die Cross-Section IR LED Process Charcateristic RED LED Synthesis IR LED Synthesis Detector Die Die View, Dimensions & Marking Die Overview Die Delayering & main Blocks ID Die Process Die Cross-Section Die Process characteristics 4. Comparison with previous generation 76 Comparison with MAX30100 LED Comparison Detector comparison 5. Manufacturing Process Flow 80 Global Overview 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 2 IC Front-End Process Wafer Fabrication Unit LEDs Global Overview LEDs Fabrication Unit RED LED Process Flow IR LED Process Flow Packaging Process Flow Package Assembly Unit 6. Cost Analysis 105 Synthesis of the cost analysis Main steps of economic analysis Yields Hypotheses LEDs Epitaxy Step LEDs Epitaxial Wafer Cost LEDs Epitaxial Wafer Cost per process steps LEDs Carrier Wafer & Final Wafer Front-End Cost LEDs Final Wafer Cost per process steps LEDs Wafer Cost LEDs Back-End 0: Probe Test & Cleaving LEDs Die Cost IC Front-end & Back-End 0 Cost IC Die Cost Back-End : Packaging Cost Back-End : Packaging Cost per Process Steps Back-End : Final Test & Calibration Cost Component Cost 6. Estimated Price Analysis 127 Maxim Integrated Financial Ratios Component Estimated Price Contact 130
3 This full reverse costing study has been conducted to provide insight on technology data, manufacturing cost and selling price of the MAX30102 Optical Heart Sensor from Maxim Integrated found in the Samsung Galaxy S7. The sensor is an optical heart-rate module and a pulse oximeter sensor in LED reflective solution. The main die features a photodiode area and an analysis part with an integrated ambient light cancellation system comprising a photodetector and a wavelength cut-off filter based on Maxim s proprietary technology. The component features two LEDs: an IR and a RED led. The LEDs are bonded on silicon substrates, the IR led is manufactured using AlInGaP material and the RED led using GaAs material. The component is outsourced for the LED manufacturing and package assembly. Compared to the previous generation, the footprint of the component increased a little but the performance based on the packaging and the electrical part are much more reliable. Thanks to some innovations, the MAX30102 device is very cost effective which enforce Maxim s leadership in this domain by SYSTEM PLUS CONSULTING, all rights reserved. 3
4 The reverse costing analysis is conducted in 3 phases: Teardown analysis Package is analyzed and measured The dies are extracted in order to get overall data: dimensions, main blocks, pad number and pin out, die marking Setup of the manufacturing process. Costing analysis Setup of the manufacturing environment Cost simulation of the process steps Selling price analysis Supply chain analysis Analysis of the selling price 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 4
5 Package Type : 14-pin OLGA Dimensions : 5.6 x 3.3 x 1.55 mm (18.48 mm² x 1.55mm) Pin Pitch : 0.8 mm Marking : C551GS5 Package Top view Package Side view Package Bottom view 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 5
6 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 6
7 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 7
8 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 8
9 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 9
10 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 10
11 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 11
12 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 12
13 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 13
14 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 14
15 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 15
16 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 16
17 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 17
18 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 18
19 Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates completed by industry experts. Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the manufacturing cost (if all parameters are cumulated). These results are open for discussion. We can reevaluate this circuit with your information. Please contact us: 2016 by SYSTEM PLUS CONSULTING, all rights reserved. 19
Electronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr October 2016 Preliminary Version Written
More informationElectronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr May 2014 Version 2 Written by Sylvain Hallereau
More informationElectronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr March 2016 - Version 1 - written by Romain
More informationElectronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr December 2015 Version 1 Written by Elena
More informationElectronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr October 2016 - Version 1 - written by Romain
More informationElectronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr April 2015 Version 1 Written by Sylvain Hallereau
More informationElectronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr September 2016 Version 1 Written by Stéphane
More informationElectronic Costing & Technology Experts
Electronic Costing & Technology Experts 21 rue la Nouë Bras de Fer 44200 Nantes France Phone : +33 (0) 240 180 916 email : info@systemplus.fr www.systemplus.fr June 2016 - Version 1 - Written by Elena
More information9 rue Alfred Kastler - BP Nantes Cedex 3 - France Phone : +33 (0) website :
9 rue Alfred Kastler - BP 10748-44307 Nantes Cedex 3 - France Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - website : www.systemplus.fr May 2012 - Version 1 Written by: Sylvain HALLEREAU DISCLAIMER
More information21 rue La Noue Bras de Fer Nantes - France Phone : +33 (0) w7-foldite :
21 rue La Noue Bras de Fer 44200 - Nantes - France Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - w7-foldite : www.systemplus.fr February 2013 Version 1 Written by: Sylvain HALLEREAU DISCLAIMER
More informationApple iphone X IR Dot Projector
Apple iphone X IR Dot Projector Dot Projector bundle including Heptagon Imaging report by Sylvain HALLEREAU December 2017 21 rue la Noue Bras de Fer 44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr
More information21 rue La Nouë Bras de Fer Nantes - France Phone : +33 (0) website :
21 rue La Nouë Bras de Fer - 44200 Nantes - France Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - website : www.systemplus.fr Mars 2013 - Version 1 written by : Florent CRÉTET DISCLAIMER :
More information9 rue Alfred Kastler - BP Nantes Cedex 3 - France Phone : +33 (0) website :
9 rue Alfred Kastler - BP 10748-44307 Nantes Cedex 3 - France Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - website : www.systemplus.fr April 2012 - Version 1 Written by: Romain FRAUX DISCLAIMER
More information9 rue Alfred Kastler - BP Nantes Cedex 3 - France Phone : +33 (0) website :
9 rue Alfred Kastler - BP 10748-44307 Nantes Cedex 3 - France Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - website : www.systemplus.fr December 2010 - Version 1 Written by: Romain FRAUX DISCLAIMER
More informationams Multi-Spectral Sensor True Color ambient light sensor from Apple iphone X
ams Multi-Spectral Sensor True Color ambient light sensor from Apple iphone X IMAGING report by Stéphane ELISABETH December 2017 version 1 21 rue la Noue Bras de Fer 44200 NANTES - FRANCE +33 2 40 18 09
More information9 rue Alfred Kastler - BP Nantes Cedex 3 - France Phone : +33 (0) website :
9 rue Alfred Kastler - BP 10748-44307 Nantes Cedex 3 - France Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - website : www.systemplus.fr November 2009 - Version 1 written by : Sylvain HALLEREAU
More informationAutoliv Night Vision System Safety Application Automotive IR Camera
Autoliv Night Vision System Safety Application Automotive IR Camera Report by Farid HAMRANI & Sylvain HALLEREAU June 2017 21 rue la Noue Bras de Fer 44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr
More informationApple iphone 6s Plus Teardown & Physical Analyses of Key Components
Apple iphone 6s Plus Teardown & Physical Analyses of Key Components Discover and understand Apple s technical choices and main suppliers The Apple iphone 6s Plus holds many IC components which are listed
More informationHTC Vive VR (Model 0PJT100) Virtual Reality Headset
HTC Vive VR (Model 0PJT100) Virtual Reality Headset System report by Wilfried THERON February 2017 21 rue la Noue Bras de Fer 44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr
More informationConsumer Physics SCiO Molecular Sensor
Consumer Physics SCiO Molecular Sensor Pocket handheld spectrometer MEMS/Imaging report by Stéphane ELISABETH February 2017 21 rue la Noue Bras de Fer 44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr
More informationCapacitive Fingerprint Sensors Technology and Patent Infringement Risk Analysis
Capacitive Fingerprint Sensors Technology and Patent Infringement Risk Analysis Component A iphone 5S Component B Ascend Mate 7 Component C Galaxy S5 Component D Galaxy S6 IP and Technology Intelligence
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 7.5 mm
More informationLecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI
Lecture: Integration of silicon photonics with electronics Prepared by Jean-Marc FEDELI CEA-LETI Context The goal is to give optical functionalities to electronics integrated circuit (EIC) The objectives
More informationStandard 7-Segment SMD Display 10 mm
Standard 7-Segment SMD Display 10 mm DESCRIPTION The VDM.10.0 series are 10 mm SMD seven segment LED displays in a very compact package. The devices utilize AlInGaP on GaAs chip technology. PRODUCT GROUP
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) including the chip with a 0.85 mm 2 sensitive area and a daylight blocking
More informationSilicon PIN Photodiode
VEMD550C Silicon PIN Photodiode DESCRIPTION VEMD550C is a high speed and high sensitive PIN photodiode. It is a low profile surface-mount device (SMD) including the chip with a 7.5 mm 2 sensitive area
More informationTSL250RD, TSL251RD, TSL260RD, TSL261RD LIGHT-TO-VOLTAGE OPTICAL SENSORS
Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to a Voltage High Irradiance Responsivity, Typically 64 mv/(w/cm 2 ) at p = 640 nm (TSL250RD)
More informationDual 1 Form A Solid-State Relay
Dual 1 Form A Solid-State Relay S1 S1' FEATURTES Dual channel (LH155) Current limit protection SMD i17934_11 S2 S2' S1 S1' S2 S2' 8 7 6 5 i17934_9 1 2 3 4 V D E Isolation test voltage 53 V RMS Typical
More informationLAB V. LIGHT EMITTING DIODES
LAB V. LIGHT EMITTING DIODES 1. OBJECTIVE In this lab you are to measure I-V characteristics of Infrared (IR), Red and Blue light emitting diodes (LEDs). The emission intensity as a function of the diode
More informationAIR-COUPLED PHOTOCONDUCTIVE ANTENNAS
AIR-COUPLED PHOTOCONDUCTIVE ANTENNAS Report: Air-Coupled Photoconductive Antennas In this paper, we present air-coupled terahertz photoconductive antenna (THz-PCAs) transmitters and receivers made on high-resistive
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with
More informationams AG TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information:
TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: Tobelbaderstrasse 30 84 Unterpremstaetten, Austria Tel: +43 (0) 336 500 0 e-mail: ams_sales@ams.com
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode. It is a low profile surface mount device (SMD) including the chip with a 7.5 mm 2 sensitive area detecting visible
More informationSilicon PIN Photodiode
VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters
More informationLAB V. LIGHT EMITTING DIODES
LAB V. LIGHT EMITTING DIODES 1. OBJECTIVE In this lab you will measure the I-V characteristics of Infrared (IR), Red and Blue light emitting diodes (LEDs). Using a photodetector, the emission intensity
More informationInnovative ultra-broadband ubiquitous Wireless communications through terahertz transceivers ibrow
Project Overview Innovative ultra-broadband ubiquitous Wireless communications through terahertz transceivers ibrow Mar-2017 Presentation outline Project key facts Motivation Project objectives Project
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:
More informationStandard 7-Segment SMD Display 10 mm
Standard 7-Segment SMD Display mm DESCRIPTION The VDM.A1 series are mm SMD seven segment LED displays in a very compact package. The devices utilize AlInGaP on GaAs chip technology. PRODUCT GROUP AND PACKAGE
More informationLow Thermal Resistance Flip-Chip Bonding of 850nm 2-D VCSEL Arrays Capable of 10 Gbit/s/ch Operation
Low Thermal Resistance Flip-Chip Bonding of 85nm -D VCSEL Arrays Capable of 1 Gbit/s/ch Operation Hendrik Roscher In 3, our well established technology of flip-chip mounted -D 85 nm backside-emitting VCSEL
More informationUV SMD LED with Silicone Lens
UV SMD LED with Silicone Lens VLMU16-365-135 FEATURES Ceramic SMT package with silicone lens Dimension (L x W x H) in mm: 1.6 x 1.6 x 1.4 DESCRIPTION VLMU16-365-135 is a ceramic based mid power UV LED
More informationBUK764R0-75C. N-channel TrenchMOS standard level FET. 12 V Motor, lamp and solenoid loads High performance automotive power systems
Rev. 2 26 April 211 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced
More informationOLI110: Phototransistor Optocoupler
DATA SHEET OLI11: Phototransistor Optocoupler Features High current transfer ratio (CTR) guaranteed over 55 C to + C ambient temperature range 15 DC electrical isolation High breakdown voltage, collector
More informationIR Sensor Module for Remote Control Systems
IR Sensor Module for Remote Control Systems 1 2 DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA 3 Pinning: 1 = GND, 2 = Carrier OUT, 3 = V S 94 8691 click logo to get started FEATURES Photo detector
More informationPRODUCT DATASHEET CGY2110UH/C Gb/s TransImpedance Amplifier FEATURES DESCRIPTION APPLICATIONS
PRODUCT DATASHEET 10.0 Gb/s TransImpedance Amplifier DESCRIPTION FEATURES The CGY2110UH is a 10.0 Gb/s TransImpedance Amplifier (TIA). Typical use is as a low noise preamplifier for lightwave receiver
More informationPRELIMINARY DATASHEET
PRELIMINARY DATASHEET 8-12 GHz 41dBm Power Amplifier DESCRIPTION The is a high performance dual line-up 3 stages GaAs Power Amplifier MMIC designed to operate in the X band. The has an output power of
More informationETi-KA358A-BL LED Chip of Specifications
ETi-KA358A-BL LED Chip of Specifications Elec-Tech International Co., Ltd. SPECIFICATIONS No. : Product: ETi-KA358A-BL VERSION: V1.0 Date: 2015-01-29 ETi-KA358A-BL Introduction ETi-KA358A-BL LEDs are high
More informationPMEG3030EP. 1. Product profile. 3 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 0 9 December 2009 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress
More informationFlexible Hybrid Electronics Fabricated with High-Performance COTS ICs using RTI CircuitFilm TM Technology
Flexible Hybrid Electronics Fabricated with High-Performance COTS ICs using RTI CircuitFilm TM Technology Scott Goodwin 1, Erik Vick 2 and Dorota Temple 2 1 Micross Advanced Interconnect Technology Micross
More informationPMEG4010ETP. 40 V, 1 A low VF MEGA Schottky barrier rectifier. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply
Rev. 5 October 20 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection,
More informationPMEG3020BER. 1. Product profile. 2 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 6 April 9 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection,
More informationams AG TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information:
TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: Tobelbaderstrasse 3 84 Unterpremstaetten, Austria Tel: +43 () 336 5 e-mail: ams_sales@ams.com
More informationAN4269. Diagnostic and protection features in extreme switch family. Document information
Rev. 2.0 25 January 2017 Application note Document information Information Keywords Abstract Content The purpose of this document is to provide an overview of the diagnostic features offered in MC12XS3
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters
More information2 Form A Solid-State Relay
LH153AAC, LH153AACTR, LH153AB 2 Form A Solid-State Relay i17934_2 SMD DIP DESCRIPTION i17933-1 The LH153 relays are DPST normally open switches (2 form A) that can replace electromechanical relays in many
More informationOT Product profile. 2. Pinning information. Four-quadrant triac, enhanced noise immunity. 1.1 General description. 1.
Rev. 1 19 May 28 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triac in a SOT223 surface-mountable plastic package 1.2 Features Sensitive gate Direct interfacing
More informationPMEG4010ER. 1. Product profile. 1 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 2 5 April 2 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection,
More informationIndex. Cambridge University Press Silicon Photonics Design Lukas Chrostowski and Michael Hochberg. Index.
absorption, 69 active tuning, 234 alignment, 394 396 apodization, 164 applications, 7 automated optical probe station, 389 397 avalanche detector, 268 back reflection, 164 band structures, 30 bandwidth
More informationPVR100AZ-B series. Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457 complement
Rev. 1 16 November 26 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457
More informationBUK A. N-channel TrenchMOS logic level FET
Rev. 2 26 April 211 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This
More informationDual 1 Form A Solid-State Relay
Dual 1 Form A Solid-State Relay DIP S1 S1' FEATURES Dual channel (LH154) Current limit protection i17934_2 SMD DESCRIPTION S1 S1' S2 S2' 8 7 6 5 i17934_9 1 2 3 4 The LH1532 dual 1 form A relays are SPST
More informationOptocoupler, Photodarlington Output
Optocoupler, Photodarlington Output C E FEATURES High isolation test voltage 5300 V RMS Standard plastic DIP-4 package Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
More informationOptocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package
ILD25T, ILD26T, ILD27T, ILD211T, ILD213T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package i17925 A1 C2 A3 C4 i17918-2 8C 7E 6C 5E DESCRIPTION The ILD25T, ILD26T, ILD27T, ILD211T, and ILD213T
More informationBAV102; BAV103. Single general-purpose switching diodes
Rev. 4 6 August 2010 Product data sheet 1. Product profile 1.1 General description, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD)
More informationBy Pierre Olivier, Vice President, Engineering and Manufacturing, LeddarTech Inc.
Leddar optical time-of-flight sensing technology, originally discovered by the National Optics Institute (INO) in Quebec City and developed and commercialized by LeddarTech, is a unique LiDAR technology
More informationMedical Electronics Dr. Neil Townsend Michaelmas Term 2001 ( Pulse Oximetry: The story so far
Medical Electronics Dr. Neil Townsend Michaelmas Term 2001 (www.robots.ox.ac.uk/~neil/teaching/lectures/med_elec) Oxygen is carried in the blood by haemoglobin which has two forms: Hb and HbO 2. These
More informationHigh-speed switching diode
Rev. 06 29 October 2008 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed
More informationPMEG6002EB; PMEG6002TV
Rev. 01 24 November 2006 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
More informationPMEG6010ETR. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection
October 22 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection,
More informationOptocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package
Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package 22628- DESCRIPTION The series has a GaAs infrared emitting diode emitter, which is optically coupled
More information1 Form A Solid State Relay
1 Form A Solid State Relay DIP i1791- SMD DESCRIPTION Vishay solid state relays (SSRs) are miniature, optically coupled relays with high-voltage MOSFET outputs. The LH1518 relays are capable of switching
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:
More informationHigh Intensity LED in Ø 3 mm Tinted Diffused Package
High Intensity LED in Ø 3 mm Tinted Diffused Package DESCRIPTION 19222 This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm diffused plastic package.
More informationBUK A. N-channel TrenchMOS standard level FET
Rev. 2 26 April 211 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationCLA LF: Surface Mount Limiter Diode
DATA SHEET CLA4610-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 73 C/W Typical threshold
More informationAmbient Light Sensor
TEMD600FX0 Ambient Light Sensor DESCRIPTION 8527- TEMD600FX0 ambient light sensor is a PIN photodiode with high speed and high photo sensitivity in a clear, surface mount plastic package. The detector
More informationLow Input Current, Phototransistor Output, SOP-4, Mini-Flat Package
VOM68A Low Input Current, Phototransistor Output, SOP-4, Mini-Flat Package FEATURES Operating temperature from - 55 C to + C A 4 C SOP-4 mini-flat package CTR range 4 % to 6 %, I F = ma C 2 3 E Isolation
More informationPMEG6045ETP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
28 May 28 Product data sheet. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a
More informationOptical Characterization and Defect Inspection for 3D Stacked IC Technology
Minapad 2014, May 21 22th, Grenoble; France Optical Characterization and Defect Inspection for 3D Stacked IC Technology J.Ph.Piel, G.Fresquet, S.Perrot, Y.Randle, D.Lebellego, S.Petitgrand, G.Ribette FOGALE
More informationPDTC143/114/124/144EQA series
PDTC43/4/24/44EQA series s Rev. 30 October 205 Product data sheet. Product profile. General description 00 ma NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN00D-3 (SOT25) Surface-Mounted
More informationSURFACE MOUNT LED LAMP 0805 Chip Type - Water Clear
85 Chip Type - Water Clear PACKAGE DIMENSIONS.87 (2.2).71 (1.8) R.8 (.2).57 (1.45).41 (5) TOP CATHODE MARK FEATURES Ultra-miniature and extremely low profile.55 (1.4).12 (.3) 2X Industrial standard footprint
More informationSymbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA V P ZSM. non-repetitive peak reverse power dissipation
Rev. 5 26 January 2011 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages.
More informationFirst Sensor PIN PD Data Sheet Part Description PC5-7 TO Order #
Responsivity () Part Description PC5-7 TO Order # 51285 Features Description Application RoHS 5 mm² PIN detector Low dark current High shunt resistance High sensitivity Fully depleteble Circular active
More informationSMP LF: Surface-Mount PIN Diode for Switch and Attenuator Applications
DATA SHEET SMP32-085LF: Surface-Mount PIN Diode for Switch and Attenuator Applications Applications Low-loss, high-power switches Low-distortion attenuators (Pin 3) (Pin ) Features Low thermal resistance:
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:
More informationIR Sensor Module for Remote Control Systems
TSOP98238 IR Sensor Module for Remote MECHANICAL DATA Pinning: 1 = Carrier OUT, 2 = GND, 3 = V S 19026 FEATURES Photo detector and preamplifier in one package AC coupled response from 30 khz to 50 khz,
More informationPDTC143X/123J/143Z/114YQA series
PDTC43X/23J/43Z/4YQA series 50 V, 0 ma NPN resistor-equipped transistors Rev. 30 October 205 Product data sheet. Product profile. General description 0 ma NPN Resistor-Equipped Transistor (RET) family
More informationReflective Optical Sensor with Transistor Output
VCNT22 Reflective Optical Sensor with Transistor Output DESCRIPTION The VCNT22 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector
More informationPMEG6010CEH; PMEG6010CEJ
Rev. 02 27 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress
More informationPMD5003K. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data
Rev. 0 6 November 2006 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to protect the base-emitter
More informationSilicon PIN Photodiode
Silicon PIN Photodiode VBP104FASR VBP104FAS FEATURES Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm 2 ): 4.4 High radiant
More informationPMEG40T50EP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
9 August 207 Product data sheet. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD28) small and flat lead Surface-Mounted Device
More informationNPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Rev. 2 October 200 Product data sheet. Product profile. General description NPN/NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96- (SO8) medium power Surface-Mounted Device (SMD)
More informationBCP68; BC868; BC68PA
Rev. 8 8 October 2 Product data sheet. Product profile. General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number [] Package
More informationLow Current 0603 SMD LED
TLMO, TLMS, TLMY Low Current 63 SMD LED DESCRIPTION 8562 The new 63 LED series have been designed in the smallest SMD package. This innovative 63 LED technology opens the way to Smaller products of higher
More informationSingle Schottky barrier diode
SOD23F Rev. 2 28 November 20 Product data sheet. Product profile. General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small and
More informationES1DVR. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data
28 March 218 Product data sheet 1. General description High power density, hyperfast PN-rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device
More informationAgilent Technologies Gli analizzatori di reti della serie-x
Agilent Technologies Gli analizzatori di reti della serie-x Luigi Fratini 1 Introducing the PNA-X Performance Network Analyzer For Active Device Test 500 GHz & beyond! 325 GHz 110 GHz 67 GHz 50 GHz 43.5
More informationFreescale Semiconductor Data Sheet: Technical Data
Freescale Semiconductor Data Sheet: Technical Data Media Resistant and High Temperature Accuracy Integrated Silicon Sensor for Measuring Absolute, On-Chip Signal Conditioned, Temperature Compensated and
More informationBAS32L. 1. Product profile. High-speed switching diode. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data
Rev. 7 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed
More information