LED technology: MOCVD for SSL. Challenges & Solutions

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1 SEMICON Europe 2009 Emerging Markets LED technology: MOCVD for SSL Challenges & Solutions Dr. Frank Schulte AIXTRON AG

2 Outline The LED market and its requirements Productivity and cost challenges Solutions provided by MOCVD Summary

3 Global Presence Global Customers Global Growth Markets AIXTRON - Revenue 2008: 270 Mio - Employees: ca. 650 AIXTRON Ltd. Cambridge, UK AIXTRON AB Lund, Sweden AIXTRON Korea Co. Ltd. Seoul, South Korea AIXTRON KK Tokyo, Japan AIXTRON Inc. Sunnyvale, CA, USA AIXTRON AG Aachen, Germany Headquarters AIXTRON Europe AIXTRON AG Shanghai, P.R.China AIXTRON Taiwan Co. Ltd.; Hsinchu Representation

4 AIXTRON s Business Positioning End Applications Display, Lighting, Signage, Data/Telecom, Storage, Mobile Appliance, Automotive DRAM, Flash, MIM Devices and layers LED, Solar, Laser, OLED High-k Dielectric, Gate Metal Markets Photonics / Opto(electronic) Electronics Deposition Technology MOCVD, OVPD CVD, AVD, ALD Material Markets Compound Semiconductor (incl. Organics) Silicon Semiconductor Key Competence Gas Phase Deposition Equipment

5 LEDs where do we stand today? Technology is proven huge volumes have been manufactured for mobile phones (key pad and display) Next boom just started: backlight units for large size LCD Notebook PC: penetration of LEDs > 50% by 2010 TV: very large quantities of LEDs will be required Challenges of automotive applications met (front light feasible) Straight forward way to SSL?

6 The way to SSL lm/w must go up $/lm must go down No need to worry look at Haitz law 1.E+04 1.E+03 1.E+02 Cost/Lumen Flux/Package 1.E+01 1.E+00 1.E-01 1.E-02 1.E-03-10x/Decade +20x/Decade But is this really going to happen? And how can this be achieved?

7 MOCVD Key Technolgy in LED Manufacturing lm/w must go up i.e. η int must go further up Reactor design must guarantee to grow highest crystal quality, new device structure at high yield Vertical LED structure entirely produced by MOCVD LED performance (brightness, Vf, ESD, ) critically depends on MOCVD $/lm going down MOCVD yield and troughput is key for cost efficient LED manufacturing

8 SSL LED manufacturing with MOCVD: productivity and cost analysis Cost per Wafer (area) High growth efficiency Reactor scaling Larger wafer size Cycle time Uptime Cost per Chip Device structure & design Chip design On wafer uniformity Wafer to wafer uniformity Run to run reproducibility Productivity/Efficiency Yield

9 Cost per Wafer (area) High growth efficiency Reactor scaling Larger wafer size Cycle time Uptime Cost per Chip Device structure & design Chip design On wafer uniformity Wafer to wafer uniformity Run to run reproducibility Productivity/Efficiency Yield

10 Reactor Scaling History: CCS Reactors 31x2 19x2 6x2 3x

11 Reactor Scaling History: GaN Planetary Reactors 42x2 24x2 11x2 6x

12 Cost per Wafer (area) High growth efficiency Reactor scaling Larger wafer size Cycle time Uptime Cost per Chip Device structure & design Chip design On wafer uniformity Wafer to wafer uniformity Run to run reproducibility Productivity/Efficiency Yield

13 Larger wafer size: GaN LEDs LED manufacturers moving to 4 4 Cost and throughput advantage

14 Larger wafer size: GaN LEDs MOCVD equipment is ready for % cost advantage Identical processes for 2 and 6 Substrate availability/prices?

15 On wafer wavelength distribution of a blue LED on 6 6 sapphire 1 nm std dev corresponding to 3 nm absolute wavelength 459 nm

16 Close Coupled Showerhead (CCS ) 300mm 200m/300mm: Silicon Industry standard GaN/Si process started sucessfully

17 Cost per Wafer (area) High growth efficiency Reactor scaling Larger wafer size Cycle time Uptime Cost per Chip Device structure & design Chip design On wafer uniformity Wafer to wafer uniformity Run to run reproducibility Productivity/Efficiency Yield

18 Cycle time improvement: AIX 2800G4-R with automatic wafer handling

19 Cost per Wafer (area) High growth efficiency Reactor scaling Larger wafer size Cycle time Uptime Cost per Chip Device structure & design Chip design On wafer uniformity Wafer to wafer uniformity Run to run reproducibility Productivity/Efficiency Yield

20 Wafer uniformity: CRIUS showerhead design Dual plenum shower head with 15,000 injectors Identical gas phase composition across the entire susceptor surface

21 Blue MQW Wavelength Uniformity (31x2 ) Wavelength Ave.: 456.7nm On-wafer std dev.: 0.9nm 470 W-to-W std dev. : 0.8nm Wavelength, nm A1 B1 B2 B3 B4 B5 B6 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 Wafer number D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D STD, nm All data with 2mm edge exclusion

22 Wafer uniformity: AIX 2800 G4 HT Triple gas injector Stable and reproducible gas phase Fine tuning of uniformity

23 42x2 Fully Loaded Run λ (nm) λ σ Wafer 5,0 4,0 3,0 2,0 1,0 0,0 σ (nm) Total spread between all 42 wafers Average on-wafer uniformity σ = 1.9 nm σ = 1,2 nm

24 Cost per Wafer (area) High growth efficiency Reactor scaling Larger wafer size Cycle time Uptime Cost per Chip Device structure & design Chip design On wafer uniformity Wafer to wafer uniformity Run to run reproducibility Productivity/Efficiency Yield

25 Improved Yield and Reproducibility by In Situ Control Monitoring and control of surface temperature, film thickness, bowing and uniformity during growth Significant improvement of chip yield

26 In Situ Control: Monitoring of all Wafers simultaneously During Epi (e.g. 6x6 LED growth) Wafer 1 Wafer 2 Wafer 3 Wafer 4 Wafer 5 Wafer 6 Growth time

27 Summary HB-LEDs: advanced + mature technology ; having further challenges to guarantee outstanding perfomance UHB LED Significant progress in productivity and manufacturing cost foreseeable by larger substrates through more automation by yield improvement (uniformity, insitu, etc.) MOCVD is key technology SSL will turn into reality Progress in MOCVD technology will make sure that this happens

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